JPH0788212B2 - Method for producing trichlorosilane - Google Patents
Method for producing trichlorosilaneInfo
- Publication number
- JPH0788212B2 JPH0788212B2 JP23922986A JP23922986A JPH0788212B2 JP H0788212 B2 JPH0788212 B2 JP H0788212B2 JP 23922986 A JP23922986 A JP 23922986A JP 23922986 A JP23922986 A JP 23922986A JP H0788212 B2 JPH0788212 B2 JP H0788212B2
- Authority
- JP
- Japan
- Prior art keywords
- reaction
- trichlorosilane
- silicon tetrachloride
- silicon
- hydrogen
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Description
【発明の詳細な説明】 産業上の利用分野 本発明は四塩化ケイ素と水素からトリクロロシランを製
造する方法に関する。TECHNICAL FIELD The present invention relates to a method for producing trichlorosilane from silicon tetrachloride and hydrogen.
従来の技術 近年のエレクトロニクス産業の発展に伴ない多結晶シリ
コン,単結晶シリコン,モノシランガス等の需要は急激
に増大しており今後ますますその需要は増加の一途をた
どることが見込まれている。ここにおいてトリクロロシ
ランは上記シリコン物質の原料として最も大量に利用さ
れているものである。例えば高純度多結晶シリコンはト
リクロロシランの熱分解によって製造されており,現在
全世界での高純度多結晶シリコンの殆どがこの方法で製
造されている。また最近トリクロロシランの不均化反応
によってモノシランが製造される方法が実用化されつつ
あり極めてトリクロロシランの需要は今後その重要性が
増大する。しかしながら,これらの方法においては、ト
リクロロシランが消費されるとともに大量の四塩化ケイ
素が副生する。たとえばトリクロロシランの熱分解によ
る高純度多結晶シリコンの製造においては、トリクロロ
シランの約60%が四塩化ケイ素として副生し,また,ト
リクロロシランの不均化によるモノシランの製造におい
ては実質的にモノシランの3倍モルの四塩化ケイ素が副
生する事になる。従ってこの副生した四塩化ケイ素は例
えばアエロジル等の原料として利用することでトリクロ
ロシランの生産コストを低減する方法等が知られている
が,実質上最も優れた四塩化ケイ素の利用方法はこれを
再びトリクロロシランに変換し,上記方法の原料として
再利用することである。例えば四塩化ケイ素をトリクロ
ロシランに変換することによって,トリクロロシランの
不均化によるモノシランの製造は実質的には金属ケイ素
と水素によってモノシランを製造するプロセスに帰着
し,このプロセスは最近実用化されつつある。2. Description of the Related Art With the recent development of the electronics industry, the demand for polycrystalline silicon, single crystal silicon, monosilane gas, etc. is increasing rapidly, and it is expected that the demand will continue to increase in the future. Here, trichlorosilane is used in the largest amount as a raw material of the above silicon substance. For example, high-purity polycrystalline silicon is manufactured by thermal decomposition of trichlorosilane, and currently most of the high-purity polycrystalline silicon in the world is manufactured by this method. Further, recently, a method for producing monosilane by a disproportionation reaction of trichlorosilane has been put into practical use, and the demand for trichlorosilane will be extremely important in the future. However, in these methods, trichlorosilane is consumed and a large amount of silicon tetrachloride is produced as a by-product. For example, in the production of high-purity polycrystalline silicon by thermal decomposition of trichlorosilane, about 60% of trichlorosilane is by-produced as silicon tetrachloride, and in the production of monosilane by disproportionation of trichlorosilane, substantially monosilane is produced. 3 times the molar amount of silicon tetrachloride will be produced as a by-product. Therefore, there is known a method of reducing the production cost of trichlorosilane by using this by-produced silicon tetrachloride as a raw material for, for example, aerosil, but the practically best method of utilizing silicon tetrachloride is It is to convert it into trichlorosilane again and reuse it as a raw material for the above method. The production of monosilane by the disproportionation of trichlorosilane, for example by converting silicon tetrachloride to trichlorosilane, has resulted in a process that is practically used with the production of monosilane from metallic silicon and hydrogen. is there.
従って四塩化ケイ素をトリクロロシランに変換する技術
はきわめて有用であり,特にこれを安価,簡便かつ効率
よく行うことはプロセスの経済上極めて重要である。Therefore, the technology for converting silicon tetrachloride to trichlorosilane is extremely useful, and it is extremely important to carry out this inexpensively, easily and efficiently in terms of process economics.
従来,四塩化ケイ素をトリクロロシランに変換する方法
としては次の方法が知られている。Conventionally, the following methods are known as methods for converting silicon tetrachloride into trichlorosilane.
(1)四塩化ケイ素と水素を1000℃前後またそれ以上の
温度で反応させトリクロロシランを製造する方法。(1) A method for producing trichlorosilane by reacting silicon tetrachloride with hydrogen at a temperature of about 1000 ° C. or higher.
(2)四塩化ケイ素,水素および金属ケイ素を500℃付
近で反応させトリクロロシランを製造する方法。(2) A method for producing trichlorosilane by reacting silicon tetrachloride, hydrogen and metallic silicon at around 500 ° C.
(3)四塩化ケイ素,水素,金属ケイ素及び塩化水素を
500℃付近で反応させトリクロロシランを製造する方
法。(3) Silicon tetrachloride, hydrogen, metallic silicon and hydrogen chloride
A method for producing trichlorosilane by reacting at around 500 ° C.
(1)の方法に関してはたとえば特開昭57−3711号にお
いては1100−1600℃で水素および四塩化ケイ素を上記温
度の発熱体に吹き付ける方法でトリクロロシランが60%
の収率で得られている。また特開昭57−156318号では第
一段目で900℃の温度において水素と四塩化ケイ素をモ
ル比H2/SiCl4=2で反応させ25%の収率でトリクロロシ
ランを得ている。また特開昭59−45920号においてはプ
ラズマ中で四塩化ケイ素と水素を反応させてトリクロロ
シランを得ている。また特開昭60−81010号においては1
200−1400℃の温度範囲で四塩化ケイ素と水素を反応さ
せて約30%の収率でトリクロロシランを得ている。Regarding the method (1), for example, in JP-A-57-3711, a method in which hydrogen and silicon tetrachloride are sprayed onto a heating element having the above temperature at 1100-1600 ° C., the content of trichlorosilane is 60%.
Is obtained in a yield of. In JP-A-57-156318, hydrogen and silicon tetrachloride are reacted at a temperature of 900 ° C. at a molar ratio of H 2 / SiCl 4 = 2 to obtain trichlorosilane in a yield of 25%. Further, in JP-A-59-45920, trichlorosilane is obtained by reacting silicon tetrachloride with hydrogen in plasma. Further, in JP-A-60-81010, 1
By reacting silicon tetrachloride with hydrogen in the temperature range of 200-1400 ° C, trichlorosilane is obtained in a yield of about 30%.
(2)の方法は(1)の方法に比較して比較的低温で反
応が進行し,エネルギー的に有利な方法であると云え
る。また(2)の方法でさらに有効に反応を進行させる
ために塩化水素ガスを使用する(3)の方法も当然のこ
とながら同様な特長を有している。(2)及び(3)の
方法に関しては触媒を用いることが有効であり銅化合物
または金属銅を触媒としている。例えば特開昭56−7361
7号においては銅粉を触媒として350−600℃で流動床反
応を行いトリクロロシランを得ている。又特開昭58−11
042号においては銅担持又は銅及びニッケルを担持した
触媒を用いて反応を行いトリクロロシランを得ている。It can be said that the method (2) is energetically advantageous because the reaction proceeds at a relatively low temperature as compared with the method (1). The method (3), which uses hydrogen chloride gas in order to more effectively proceed the reaction by the method (2), naturally has the same characteristics. Regarding the methods of (2) and (3), it is effective to use a catalyst, and a copper compound or metallic copper is used as a catalyst. For example, JP-A-56-7361
In No. 7, trichlorosilane was obtained by conducting a fluidized bed reaction at 350-600 ° C using copper powder as a catalyst. Also, JP-A-58-11
In No. 042, trichlorosilane is obtained by performing a reaction using a catalyst supporting copper or supporting copper and nickel.
これらの方法において,例えば(1)の方法では,かな
り高い四塩化ケイ素の転化率でトリクロロシランが得ら
れているが,とりわけ30%以上の収率でトリクロロシラ
ンを得るためには1000℃以上の高温で反応を行わねばな
らずこれに費やすエネルギーは莫大なものである。加え
て,高温反応であるため,塩素化ケイ素による反応器等
の腐食が激しくさらに,望ましくない高分子量のクロロ
シラン類が不可避的に副生する等の欠点を有しており未
だ実用化には程遠いものである。Among these methods, for example, in the method (1), trichlorosilane was obtained with a considerably high conversion rate of silicon tetrachloride, but especially in order to obtain trichlorosilane with a yield of 30% or more, the temperature of 1000 ° C or more was used. The energy required to carry out the reaction at high temperature is enormous. In addition, since it is a high-temperature reaction, it suffers from severe corrosion of the reactor and the like due to silicon chloride, and also has the drawback that chlorosilanes of undesired high molecular weight are inevitably produced as a by-product, which is far from practical use. It is a thing.
これに対し、(2)及び(3)の方法は熱力学的見地か
らも,トリクロロシランの製造に有用な方法であり,前
記した様にトリクロロシランの不均化によるモノシラン
を製造する方法で副生する四塩化ケイ素を変換しトリク
ロロシランを製造することは特に(2)の方法では実質
的にはケイ素と水素からモノシランを製造することとな
るため、非常に有用な方法であると云える。なお,
(3)の方法に於いては,トリクロロシランの収量は多
いが,塩化水素は四塩化ケイ素のトリクロロシランへの
変換には関与せず,実質的には金属シリコンからトリク
ロロシランを合成することに過ぎない。従って,四塩化
ケイ素の再利用という観点からすれば(2)の方法より
は幾分有用性は劣るが,一方,トリクロロシランの収量
が多いと云う利点も有しており,塩化水素の使用量を少
量にして行うことにより,その特徴を発揮させることが
望ましい。On the other hand, the methods (2) and (3) are useful methods for producing trichlorosilane from a thermodynamic point of view, and as described above, the methods for producing monosilane by disproportionation of trichlorosilane are sub-methods. The production of trichlorosilane by converting raw silicon tetrachloride can be said to be a very useful method, in particular, since the method (2) substantially produces monosilane from silicon and hydrogen. In addition,
In the method of (3), although the yield of trichlorosilane is high, hydrogen chloride does not participate in the conversion of silicon tetrachloride into trichlorosilane, and practically it is necessary to synthesize trichlorosilane from metallic silicon. Not too much. Therefore, from the viewpoint of reuse of silicon tetrachloride, it is somewhat less useful than the method of (2), but on the other hand, it also has the advantage that the yield of trichlorosilane is high, and the amount of hydrogen chloride used. It is desirable that the feature be exhibited by using a small amount.
さらに、これら(2)及び(3)の方法を組合せたプロ
セスも知られている(特開昭60−36318号)。Furthermore, a process in which these methods (2) and (3) are combined is also known (JP-A-60-36318).
以上の方法において,四塩化ケイ素の有効再利用という
観点からすれば(2)の方法が最も優れており,またト
リクロロシランの生成という観点からすれば(3)の方
法も優れた方法であり捨てがたい。Of the above methods, the method (2) is the best from the viewpoint of effective reuse of silicon tetrachloride, and the method (3) is also the best from the viewpoint of trichlorosilane formation. It's hard.
すなわち,(2)または(3)の方法は経済性も高く特
に(2)の方法は現在本命の方法として実用化されつつ
ある。That is, the method (2) or (3) is highly economical, and the method (2) in particular is currently being put to practical use as a favorite method.
しかしながら,(2)の方法においては,反応温度が通
常500−600℃で行われており,300℃以下の反応温度にお
いては実質上トリクロロシランが生成した例はない。従
って当然のことながら,本発明におけるが如く,四塩化
ケイ素の臨界温度以下で四塩化ケイ素を液体状として気
体−液体−固体相の不均一反応によるトリクロロシラン
を製造した例は従来全く知られていない。However, in the method (2), the reaction temperature is usually 500 to 600 ° C., and there is no case where trichlorosilane is substantially produced at the reaction temperature of 300 ° C. or lower. Therefore, as a matter of course, as in the present invention, an example of producing trichlorosilane by a heterogeneous reaction of a gas-liquid-solid phase with silicon tetrachloride in a liquid state below the critical temperature of silicon tetrachloride has been heretofore known at all. Absent.
またこの(2)の方法においては,従来大量かつ連続的
にトリクロロシランを製造する場合には,気体−固体相
流動床装置が用いられている。しかしながら,その場
合,流動床を用いるため,反応により粒度の小さくなっ
たケイ素金属や触媒成分の揮散等による有効成分の損
失,高温反応による触媒成分の揮散,装置の腐食,更に
は高分子量のクロロシラン類の生成によるトリクロロシ
ランの選択率の低下,高温であるためエネルギーの大量
使用等といった,工業化するためにはさらに解決さるべ
き多くの欠点を有している。Further, in the method (2), a gas-solid phase fluidized bed apparatus is conventionally used when a large amount of trichlorosilane is continuously produced. However, in that case, since a fluidized bed is used, loss of effective components due to volatilization of silicon metal and catalyst components whose particle size is reduced by reaction, volatilization of catalyst components due to high temperature reaction, corrosion of equipment, and high molecular weight chlorosilane. There are many drawbacks to be solved further for industrialization, such as a decrease in the selectivity of trichlorosilane due to the formation of silanes, a large amount of energy being used at high temperatures, and so on.
本発明者らはこれらを鑑み鋭意検討した結果驚くべきこ
とに四塩化ケイ素の臨海温度以下に於いて四塩化ケイ素
を液体状態で反応させしかも高収率でかつ四塩化ケイ素
の単位体積当たりの処理量を増大させてトリクロロシラ
ンを製造する極めて経済的利点の高い方法を見出し本発
明を完成するにいたった。As a result of intensive studies conducted by the present inventors, surprisingly, silicon tetrachloride is reacted in a liquid state at a temperature below the critical temperature of silicon tetrachloride, and the treatment is performed at a high yield and per unit volume of silicon tetrachloride. The inventors have found a method of producing trichlorosilane in an increased amount with extremely high economic advantages, and have completed the present invention.
発明の目的 すなわち,本発明の目的は,上記トリクロロシランの熱
分解による多結晶シリコンの製造またはトリクロロシラ
ンの不均化反応によるモノシランの製造に於いて,副生
する四塩化ケイ素をトリクロロシランへ変換し,四塩化
ケイ素を有効に利用する極めて経済性の高い方法を提供
することにある。OBJECT OF THE INVENTION That is, the object of the present invention is to convert by-produced silicon tetrachloride into trichlorosilane in the production of polycrystalline silicon by thermal decomposition of trichlorosilane or the production of monosilane by disproportionation reaction of trichlorosilane. However, it is to provide an extremely economical method for effectively using silicon tetrachloride.
本発明に従えば,四塩化ケイ素と金属ケイ素を,水素若
しくは水素及び塩化水素と反応せしめてトリクロロシラ
ンを製造する方法において,該四塩化ケイ素をその臨海
温度以下の液体状態として、該反応系を気−液−固相の
不均一反応とすると共に,該気−液−固相の不均一反応
を,金属銅,金属のハロゲン化物及びハロゲン化アルミ
ニウムの存在下に行うことを特徴とするトリクロロシラ
ンの製造方法が提供される。According to the present invention, in a method for producing trichlorosilane by reacting silicon tetrachloride and metallic silicon with hydrogen or hydrogen and hydrogen chloride, the reaction system is prepared by bringing the silicon tetrachloride into a liquid state below its critical temperature. Trichlorosilane characterized in that it is a gas-liquid-solid phase heterogeneous reaction and the gas-liquid-solid phase heterogeneous reaction is carried out in the presence of copper metal, a metal halide and aluminum halide. A method of manufacturing the same is provided.
発明の開示 以下本発明を詳細に説明する。DISCLOSURE OF THE INVENTION The present invention will be described in detail below.
本発明で行う四塩化ケイ素のトリクロロシランへの変換
は基本的に次式 3SiCl4+2H2+Si→4HSiCl3Cl (I) で表わされる。この反応は平衡反応であり,温度が高い
ほど,圧力が高いほど,さらにH2/SiCl4モル比が高いほ
ど反応が右方向へ進行する。また,後述するように,四
塩化ケイ素の臨海温度である233.6℃(現実的には230℃
以下)以下の温度で四塩化ケイ素を液体状態としての低
温気相−液相−固体相反応でトリクロロシランを製造し
た例は今まで知られていなかったが,本発明においては
上記反応を金属銅,金属のハロゲン化物及びハロゲン化
アルミニウムと云う特定の添加物を存在下に行うこと
で,四塩化ケイ素を液体状態としてまたは反応状態にお
いて不活性な溶媒に溶解させて液体状態で反応させてト
リクロロシランを収率よく製造することを可能ならしめ
たものである。また当然のことであるが塩化水素ガスを
本発明反応系内に加えることによって明らかにトリクロ
ロシランの収量を増大させる結果をもたらす手段を採用
しても良い。The conversion of silicon tetrachloride into trichlorosilane according to the present invention is basically represented by the following formula 3SiCl 4 + 2H 2 + Si → 4HSiCl 3 Cl (I). This reaction is an equilibrium reaction, and the higher the temperature, the higher the pressure, and the higher the H 2 / SiCl 4 molar ratio, the more the reaction proceeds to the right. In addition, as will be described later, the seaside temperature of silicon tetrachloride is 233.6 ℃ (actually 230 ℃).
Below) no example of producing trichlorosilane by a low temperature gas phase-liquid phase-solid phase reaction in which silicon tetrachloride is in a liquid state at the following temperature has not been known so far, but in the present invention, the above reaction is carried out using metallic copper. , Metal halides and aluminum halides are added in the presence of specific additives to dissolve trichlorosilane in a liquid state or in an inert solvent in the reaction state and react in a liquid state to give trichlorosilane. It has been made possible to produce the above in good yield. Further, as a matter of course, it is possible to adopt a means which obviously results in increasing the yield of trichlorosilane by adding hydrogen chloride gas into the reaction system of the present invention.
本発明に使用する金属ケイ素の純度等はとくに限定する
ものではなく,冶金ケイ素の低純度品でも高純度ケイ素
でもいずれであっても構わない。経済的な観点からすれ
ば前者を使用することが好ましい。これら金属ケイ素の
形態は問わないが好ましくは反応速度の観点から表面積
の大きい粉末状で使用することが推奨される。勿論,粒
状等他の形態で使用することも可能である。The purity of metallic silicon used in the present invention is not particularly limited, and may be a low-purity metallurgical silicon or a high-purity silicon. From the economical point of view, it is preferable to use the former. The form of these metallic silicons is not limited, but it is recommended to use them in the form of powder having a large surface area from the viewpoint of reaction rate. Of course, it can be used in other forms such as granular form.
本発明においては,上記反応を金属銅,金属のハロゲン
化物及びハロゲン化アルミニウムの存在下に行うが,本
発明で使用する金属銅は特に限定するものではなく,通
常市販の電解銅が用いられるがその他還元銅も使用可能
である。純度に関してはそれほど問題にする必要はな
い。金属銅の形態は問わないが好ましくは反応速度の観
点から表面積の大きい粉末状で使用することが推奨され
る。勿論,粒状等他の形態で使用することも可能であ
る。In the present invention, the above reaction is carried out in the presence of copper metal, a metal halide and aluminum halide, but the metal copper used in the present invention is not particularly limited, and commercially available electrolytic copper is usually used. Other reduced copper can also be used. Purity need not be so much of a concern. The form of metallic copper does not matter, but it is recommended to use it in the form of powder having a large surface area from the viewpoint of reaction rate. Of course, it can be used in other forms such as granular form.
また本発明で使用する金属のハロゲン化物とは,元素記
号でCu,Ti,V,Cr,Mn,Mn,Fe,Co,Ni,Zn,Zr,W,Mo,Ru,Rh,Pd,
Ag,Sn,Sb,Hg,PtおよびPbのハロゲン化物であり,具体的
には分子式でCuCl,CuCl2,TiCl3,TiCl4,VCl3,VCl5,VOC
l3,CrCl2,CrCl3,MnCl2,FeCl2,FeCl3,CoCl2,NiCl2,ZnC
l2,ZrCl4,ZrOCl2,MoCl3,MoCl5,RuCl2,RuCl3,RhCl3,PdCl
2,AgCl,SnCl2,SnCl4,SbC3,SbCl5,WCl5,WCl6,Hg2Cl2,HgC
l2,PtCl4,PbCl2及びPbCl4等の金属塩化物;CuBr,CuBr2,T
iBr4,VBr3,CrBr3,MnBr2,FeBr2,FeBr3,CoBr2,NiBr2,ZnBr
2,ZrBr4,MoBr3,PdBr2,AgBr,SnBr2,SnBr4,SbBr3,WBr5,Hg
2Br2,HgBr2,及びPbBr2等の金属臭化物;及びCuI,TiI4,C
rI2,MnI2,FeI2,CoI2,NiI2,ZnI2,ZrI4,PdI2,AgI,SnI2,Sn
I4,SbI3,SbI5,WI4,Hg2I2,PtI2,PtI4,及びPbI2等の金属
ヨウ化化物などである。また,ハロゲン原子が二種以上
混在したハロゲン化物も有効であり,これらの一種また
は二種以上の混合物で使用する。The metal halide used in the present invention is an elemental symbol of Cu, Ti, V, Cr, Mn, Mn, Fe, Co, Ni, Zn, Zr, W, Mo, Ru, Rh, Pd,
Ag, Sn, Sb, Hg, Pt and Pb halides, and their specific molecular formulas are CuCl, CuCl 2 , TiCl 3 , TiCl 4 , VCl 3 , VCl 5 , VOC
l 3, CrCl 2, CrCl 3 , MnCl 2, FeCl 2, FeCl 3, CoCl 2, NiCl 2, ZnC
l 2 , ZrCl 4 , ZrOCl 2 , MoCl 3 , MoCl 5 , RuCl 2 , RuCl 3 , RhCl 3 , PdCl
2 , AgCl, SnCl 2 , SnCl 4 , SbC 3 , SbCl 5 , WCl 5 , WCl 6 , Hg 2 Cl 2 , HgC
Metal chlorides such as l 2 , PtCl 4 , PbCl 2 and PbCl 4 ; CuBr, CuBr 2 , T
iBr 4 , VBr 3 , CrBr 3 , MnBr 2 , FeBr 2 , FeBr 3 , CoBr 2 , NiBr 2 , ZnBr
2 , ZrBr 4 , MoBr 3 , PdBr 2 , AgBr, SnBr 2 , SnBr 4 , SbBr 3 , WBr 5 , Hg
Metal bromides such as 2 Br 2 , HgBr 2 , and PbBr 2 ; and CuI, TiI 4 , C
rI 2 ,, MnI 2 ,, FeI 2 ,, CoI 2 ,, NiI 2 ,, ZnI 2 ,, ZrI 4 ,, PdI 2 ,, AgI, SnI 2 ,, Sn
Examples thereof include metal iodides such as I 4 , SbI 3 , SbI 5 , WI 4 , Hg 2 I 2 , PtI 2 , PtI 4 , and PbI 2 . Further, a halide in which two or more kinds of halogen atoms are mixed is also effective, and one kind or a mixture of two or more kinds thereof is used.
本発明で使用するハロゲン化アルミニウムとは塩化アル
ミニウム,臭化アルミニウム及びヨウ化アルミニウムで
あり,これらの1種または2種以上の混合物で使用す
る。The aluminum halide used in the present invention is aluminum chloride, aluminum bromide and aluminum iodide, and one or a mixture of two or more of them is used.
次に本発明に於ける四塩化ケイ素のトリクロロシランへ
の変換方法について述べる。Next, the method for converting silicon tetrachloride to trichlorosilane in the present invention will be described.
変換反応は基本的には上記(I)式に従って行われる
が,本発明においては,反応は,気体相−液体相−固体
相の所謂気−液−固相の不均一系で行う。通常四塩化ケ
イ素を液体状とし,かつ加熱反応を行うため加圧する。
当然のことであるが反応圧力は設定した反応温度に於け
る四塩化ケイ素の蒸気圧以上の圧力とする。また反応に
使用する水素はあらかじめ反応に不活性な媒体(気体)
たとえばアルゴン,ヘリウム及び/又は窒素等で稀釈し
て用いても構わないが,反応平衡,反応速度及び経済的
な観点から水素単独で使用することが好ましい。又通常
予期される程度の不純物を含んでいても差し支えなく
い。また反応条件に於いて原料,生成物,および金属
銅,金属のハロゲン化物,ハロゲン化アルミニウム等の
添加物等にたいして不活性な溶媒,例えばn−ヘキサ
ン,n−ヘプタンに代表される脂肪族炭化水素,シクロヘ
キサン,シクロオクタンに代表される脂環式炭化水素及
びベンゼン,トルエンに代表される芳香族炭化水素等を
使用することも可能である。The conversion reaction is basically carried out according to the above formula (I), but in the present invention, the reaction is carried out in a so-called gas-liquid-solid phase heterogeneous system of gas phase-liquid phase-solid phase. Normally, silicon tetrachloride is made into a liquid state, and pressure is applied to carry out a heating reaction.
As a matter of course, the reaction pressure should be higher than the vapor pressure of silicon tetrachloride at the set reaction temperature. Hydrogen used in the reaction is a medium (gas) that is inert to the reaction in advance.
For example, it may be diluted with argon, helium and / or nitrogen, etc., but it is preferable to use hydrogen alone from the viewpoint of reaction equilibrium, reaction rate and economical efficiency. It does not matter if it contains impurities that are normally expected. Under the reaction conditions, the solvent is inert to the raw materials, products, and additives such as metallic copper, metal halides and aluminum halides, for example, aliphatic hydrocarbons represented by n-hexane and n-heptane. It is also possible to use alicyclic hydrocarbons typified by cyclohexane and cyclooctane, and aromatic hydrocarbons typified by benzene and toluene.
次に本発明における最も特筆すべき点である四塩化ケイ
素を液体状態として反応させる意義について述べる。Next, the significance of reacting silicon tetrachloride in a liquid state, which is the most remarkable point in the present invention, will be described.
四塩化ケイ素を液体状態に保持したまま反応させること
は,液体状の四塩化ケイ素と固体金属ケイ素と,および
該液体状四塩化ケイ素中に溶解等によってまたは気液接
触によって取り込まれた水素と,が反応することを意味
するものであり,従って反応場は殆ど実質的に液体−固
体相である。そこで生成したトリクロロシランはまず液
体相で生成し液体に溶存するが更に気体相に移行する。
この際当然のことであるが四塩化ケイ素も同様に気体相
へ移行する。トリクロロシランと四塩化ケイ素の同一温
度に於ける蒸気圧はトリクロロシランの方がより高いた
め液体相に於けるSiHCl3/SiCl4濃度比よりも気体相に於
けるSiHCl3/SiCl4濃度比の方が高くなる。かくして該反
応を連続的に行わしめれば常に液相に於けるSiHCl3/SiC
l4濃度比は減少の方向に向かうから,反応平衡の観点か
ら該反応の反応速度を高める事となり,トリクロロシラ
ンの製造に関してより有利な方向へ反応が進む事とな
る。従って,通常の流動床反応の如く,生成ガス組成が
そのままの組成で排出されるのと比較して,反応平衡上
常に生成物の組成が生成物に有利になるように作用させ
る効果が期待出来るのである。The reaction of silicon tetrachloride while keeping it in a liquid state is performed by reacting liquid silicon tetrachloride with solid metal silicon, and hydrogen taken into the liquid silicon tetrachloride by dissolution or the like or by gas-liquid contact. Are meant to react, so the reaction field is almost essentially a liquid-solid phase. The trichlorosilane formed there is first formed in the liquid phase and dissolved in the liquid, but further transfers to the gas phase.
At this time, it goes without saying that silicon tetrachloride also shifts to the gas phase. Since the vapor pressures of trichlorosilane and silicon tetrachloride at the same temperature are higher in trichlorosilane, the concentration ratio of SiHCl 3 / SiCl 4 in the gas phase is higher than that of SiHCl 3 / SiCl 4 in the liquid phase. It becomes higher. Thus, if the reaction is carried out continuously, SiHCl 3 / SiC in the liquid phase is always obtained.
Since the l 4 concentration ratio tends to decrease, the reaction rate of the reaction is increased from the viewpoint of reaction equilibrium, and the reaction proceeds in a more advantageous direction for the production of trichlorosilane. Therefore, as compared with the case where the product gas composition is discharged as it is, as in the case of a normal fluidized bed reaction, the effect that the composition of the product always acts in favor of the product in terms of reaction equilibrium can be expected. Of.
更に該反応に於いて無水塩化水素ガスを使用することで
トリクロロシランの生成量もより増大させる事ができ
る。Furthermore, the amount of trichlorosilane produced can be further increased by using anhydrous hydrogen chloride gas in the reaction.
以上の如くして,本発明においては,反応温度は四塩化
ケイ素の臨海温度以下で行い,好ましくは230℃以下100
℃以上で行う。100℃未満の温度ではトリクロロシラン
の実質的な生成は望めない。なお本反応を行うに際して
原料として仕込む四塩化ケイ素中に反応平衡量以下のト
リクロロシランが混在していても構わなく,このことは
反応によって生成したトリクロロシランを蒸留等により
分離した際四塩化ケイ素中にトリクロロシランが残存し
ているものも使用可能であることを意味してするが,好
ましくは反応平衡上なるべくトリクロロシランを含まな
い若しくはトリクロロシラン含有量が出来るだけ少ない
四塩化ケイ素を使用することが実質的にトリクロロシラ
ンの生成量が最も多くなる事となり望ましい。As described above, in the present invention, the reaction temperature is not higher than the critical temperature of silicon tetrachloride, preferably not higher than 230 ° C.
Do above ℃. At temperatures below 100 ° C, substantial formation of trichlorosilane is not expected. It should be noted that trichlorosilane in an amount equal to or less than the reaction equilibrium amount may be mixed in the silicon tetrachloride charged as a raw material when carrying out this reaction. This means that when trichlorosilane produced by the reaction is separated by distillation, etc. It means that it is possible to use the one in which trichlorosilane remains, but it is preferable to use silicon tetrachloride that does not contain trichlorosilane or has the trichlorosilane content as low as possible in view of reaction equilibrium. This is desirable because it substantially produces the largest amount of trichlorosilane.
次に本発明における原料,金属銅,金属のハロゲン化物
等の添加物の使用量について述べる。本発明に於ける,
金属ケイ素の使用量は特に限定はしないが,バッチ式で
行う場合は四塩化ケイ素に対して1重量%以上で行うこ
とが好ましくこの値未満であると反応とともに金属ケイ
素が消費され有効に反応が行いえなくなる恐れがある。
又金属銅,金属ハロゲン化物及びハロゲン化アルミニウ
ム等の添加物の使用量は特に限定はしないが,金属ケイ
素に対して金属原子比で各々金属銅は0.5%以上,金属
ハロゲン化物及びハロゲン化アルミニウムは0.1%以上
で行うことが反応速度上好ましい。Next, the amounts used of the raw materials, additives such as metallic copper and metal halides in the present invention will be described. In the present invention,
The amount of metallic silicon used is not particularly limited, but when it is carried out in a batch system, it is preferably carried out in an amount of 1% by weight or more based on silicon tetrachloride. There is a risk that you will not be able to do it.
The amount of additives such as copper metal, metal halide and aluminum halide is not particularly limited, but metal copper is 0.5% or more in metal atom ratio to metal silicon, and metal halide and aluminum halide are not used. It is preferable to perform it at 0.1% or more in terms of reaction rate.
次に本発明を実際に実施するための具体的な態様につい
て述べる。前記した様に本発明における反応は100℃以
上を必要とするため加圧(水素加圧が好ましい)状態で
行われ,また流通式反応法もしくはバッチ式反応のいず
れの方法で行うことも可能である。Next, a specific mode for actually carrying out the present invention will be described. As described above, since the reaction in the present invention requires 100 ° C. or higher, it is carried out under pressure (preferably hydrogen pressurization), and it can be carried out by either a flow reaction method or a batch reaction method. is there.
本発明に於ける実施方法に関しては特に限定はしないが
実施し易い方法として以下の方法が挙げられる。もちろ
んこれらの方法に本発明は限定されるものではない。The method for carrying out the present invention is not particularly limited, but the following methods are mentioned as a method that is easy to carry out. Of course, the present invention is not limited to these methods.
(1)オートクレーブ中に所定量の四塩化ケイ素,金属
ケイ素,金属銅,金属ハロゲン化物及びハロゲン化アル
ミニウムを入れたのち所定の圧力に水素で加圧しその後
加熱撹拌反応を行う方法。(1) A method in which a predetermined amount of silicon tetrachloride, metal silicon, metal copper, metal halide, and aluminum halide are put in an autoclave, and then hydrogen is pressurized to a predetermined pressure, and then a heating and stirring reaction is performed.
(2)予め所定温,及び水素で所定圧に保たれた加圧反
応器中に所定量の四塩化ケイ素,銅,金属ハロゲン化物
及びハロゲン化アルミニウムを連続的に導入しかつ生成
ガス及び/又は生成液を連続的に抜出し反応を行う方
法。(2) A predetermined amount of silicon tetrachloride, copper, a metal halide, and an aluminum halide are continuously introduced into a pressure reactor previously kept at a predetermined temperature and a predetermined pressure with hydrogen, and the produced gas and / or A method in which the product solution is continuously withdrawn and the reaction is carried out.
(3)予め金属ケイ素,銅,金属ハロゲン化物及びハロ
ゲン化アルミニウムを反応器中に入れ所定温度に保ち乍
ら水素加圧で四塩化ケイ素及び水素を連続的に導入し且
つ生成ガス及び/又は生成液を連続的に抜出しながら反
応を行い必要に応じて金属ケイ素,金属銅,金属ハロゲ
ン化物及びハロゲン化アルミニウムを間歇的に導入する
方法。(3) Metallic silicon, copper, metal halide and aluminum halide are put in a reactor in advance and maintained at a predetermined temperature, and silicon tetrachloride and hydrogen are continuously introduced by hydrogen pressure and a produced gas and / or a produced gas. A method in which the reaction is carried out while continuously extracting the liquid, and metallic silicon, metallic copper, a metallic halide, and an aluminum halide are intermittently introduced as necessary.
とりわけ大量にトリクロロシランを製造する方法として
(2)又は(3)の方法が望ましい。加えて連続反応を
行うことで,反応によって金属ケイ素は消費されるが,
銅,金属ハロゲン化物,及びハロゲン化アルミニウムは
実質上消費されない。従って反応を低温で行えばこれら
の揮散を防ぐことができるので反応器中で金属ケイ素に
対する銅,金属ハロゲン化物,及びハロゲン化アルミニ
ウムとの比率が高くても,更にこれらを継足す必要はそ
れほどないため充分経済的に成立しうる方法として行え
る。また上記(1)〜(3)の方法等に於いて予め不活
性溶媒等の中でハロゲン化アルミニウムと金属ハロゲン
化物を反応させて得られたものから溶媒等を除去し,こ
れらの反応生成物を単離したものを使用する事も出来
る。Particularly, the method (2) or (3) is preferable as a method for producing trichlorosilane in a large amount. By conducting a continuous reaction in addition, metallic silicon is consumed by the reaction,
Copper, metal halides, and aluminum halides are practically not consumed. Therefore, if the reaction is carried out at a low temperature, these volatilizations can be prevented, so even if the ratio of copper, metal halide, and aluminum halide to the metal silicon is high in the reactor, it is not necessary to add them further. Therefore, it can be implemented as a method that can be economically established. In the methods (1) to (3) above, the reaction product is obtained by removing the solvent and the like from the product obtained by previously reacting the aluminum halide with the metal halide in an inert solvent or the like. It is also possible to use the isolated one.
作用効果 本発明は四塩化ケイ素をトリクロロシランへ経済的に変
換する極めて有効な方法である。従来不可能であった四
塩化ケイ素の臨界温度以下で操作することにより,四塩
化ケイ素を液体状態で反応器中に導入しかつ液体状態で
反応を行うことができる。従って反応容器を容易に小型
化することが可能となり経済的である。加えて当然のこ
とながら低温で反応を行うことを可能とした結果,反応
装置等の腐蝕を抑制することが可能となり,加えて低エ
ネルギーでトリクロロシランを製造することが可能とな
り経済的効果は非常に大きく工業的にきわめて有用であ
る。すなわち,従来高温反応のため多大のエネルギーを
要していたものが,これにより大幅なエネルギーの削減
が可能となり,低温下,液相(四塩化ケイ素)反応が可
能となったため,反応容器を小型化出来,反応装置の腐
食を抑制し,かつスチーム等の低温の熱媒体が使用出来
るなど,大幅な設備の削減が可能となるのである。Effect of the Invention The present invention is an extremely effective method for economically converting silicon tetrachloride into trichlorosilane. By operating below the critical temperature of silicon tetrachloride, which was previously impossible, silicon tetrachloride can be introduced into the reactor in the liquid state and the reaction can be carried out in the liquid state. Therefore, the reaction container can be easily downsized, which is economical. In addition, as a matter of course, since it is possible to carry out the reaction at a low temperature, it is possible to suppress the corrosion of the reaction device, etc. In addition, it is possible to produce trichlorosilane with low energy, and the economical effect is extremely high. Very large and extremely useful industrially. In other words, what used to require a large amount of energy due to the high temperature reaction, but this has enabled a significant reduction in energy, and since the liquid phase (silicon tetrachloride) reaction has become possible at low temperatures, the reaction vessel has a small size. It is possible to reduce the amount of equipment, such as the reduction of corrosion, the suppression of reactor corrosion, and the use of low-temperature heat media such as steam.
実施例 以下本発明を実施例によって更に具体的に説明する。EXAMPLES Hereinafter, the present invention will be described more specifically by way of examples.
実施例 1 耐圧300Kg/cm2G,耐温500℃SUS316製200mlオートクレー
ブに,金属ケイ素(200メッシュ,純度99.9%)9.00g
(320mg−atm),塩化アルミニウム5.00g(37.5mmol)
市販の金属銅粉末B7.00g(110mg−atm),市販の塩化第
一銅3.70g(37.5mmol)及び四塩化ケイ素130g(765mmo
l)を入れた後室温で水素を圧入し圧110kg/cm2Gとした
後(H2/SiCl4〜0.75mol比)300rpmで撹拌し乍ら230Cに
加熱し(昇温時間20分)230℃で5時間反応を行った。
反応終了後オートクレーブを5℃に冷却し,降圧後反応
液をガスクロマトグラフ法により分析した結果反応液組
成はトリクロロシラン28.2モル%及び四塩化ケイ素71.8
モル%でありこれは四塩化ケイ素の転化率22.5%に相当
し非常に高収率でトリクロロシランを得ることが出来
た。Example 1 Pressure resistance 300 Kg / cm 2 G, temperature resistance 500 ° C SUS316 200 ml autoclave, metallic silicon (200 mesh, purity 99.9%) 9.00 g
(320mg-atm), aluminum chloride 5.00g (37.5mmol)
Commercially available metallic copper powder B 7.00 g (110 mg-atm), commercially available cuprous chloride 3.70 g (37.5 mmol) and silicon tetrachloride 130 g (765 mmo
l) and then pressurize hydrogen at room temperature to a pressure of 110 kg / cm 2 G (H 2 / SiCl 4 to 0.75 mol ratio), stir at 300 rpm and heat to 230 C (heating time 20 minutes) 230 The reaction was carried out at 0 ° C for 5 hours.
After the reaction was completed, the autoclave was cooled to 5 ° C., and the reaction solution after depressurization was analyzed by gas chromatography. The composition of the reaction solution was 28.2 mol% of trichlorosilane and 71.8% of silicon tetrachloride.
It was mol%, which corresponds to a conversion of silicon tetrachloride of 22.5%, and trichlorosilane could be obtained in a very high yield.
実施例 2 反応時間を2.5及び1時間した以外は実施例1と全く同
一の反応条件で行い反応液をガスクロマトグラフ法によ
り分析した。結果は第1表に示した。Example 2 The reaction liquid was analyzed by a gas chromatographic method under the same reaction conditions as in Example 1 except that the reaction time was 2.5 and 1 hour. The results are shown in Table 1.
上記より,短時間で反応を行っても非常に高い四塩化ケ
イ素の転化率が得られることが分かった。 From the above, it was found that a very high conversion rate of silicon tetrachloride can be obtained even if the reaction is carried out in a short time.
比較例 1(ブランク試験) 実施例1と同様の反応条件でそれぞれA)塩化アルミニ
ウムを加えない,B)塩化銅を加えない,C)塩化アルミニ
ウム及び塩化銅を加えないで他の条件は全く実施例1と
同一の反応条件で5時間加熱反応を行った。結果はいず
れも実施例1の結果に比べて極めて低い四塩化ケイ素の
塩化率であり,本発明における金属銅,塩化銅,及び塩
化アルミニウム組合せが極めて本反応に有効であること
が判明した。比較例1の結果を第2表にまとめて示す。Comparative Example 1 (Blank Test) Under the same reaction conditions as in Example 1, A) aluminum chloride was not added, B) copper chloride was not added, and C) aluminum chloride and copper chloride were not added, and other conditions were carried out at all. A heating reaction was carried out for 5 hours under the same reaction conditions as in Example 1. The results are all extremely low chlorination rates of silicon tetrachloride as compared with the results of Example 1, and it was found that the combination of metallic copper, copper chloride and aluminum chloride in the present invention is extremely effective in this reaction. The results of Comparative Example 1 are summarized in Table 2.
実施例3 実施例1と同一量の金属銅,金属ケイ素,塩化アルミニ
ウム及び四塩化ケイ素と実施例1の塩化第一銅と同モル
量の種々の金属塩化物をオートクレーブに入れ水素仕込
圧55Kg/cm2G(仕込H2/SiCl4モル比〜0.38)で水素を圧
入した後230℃で撹拌しながら加熱し当該温度で2.5時間
反応を行った後5℃に冷却後降圧し,反応液をガスクロ
マトグラフ法によって分析した。結果は第3表に示すよ
うに種々の金属塩化物はいずれも好結果を与えた。この
時最高反応圧は100Kg/cm2Gであった。なお塩化物は総て
無水物を用いた。 Example 3 The same amount of metallic copper, metallic silicon, aluminum chloride and silicon tetrachloride as in Example 1 and various metallic chlorides in the same molar amount as cuprous chloride of Example 1 were put into an autoclave and the hydrogen charging pressure was 55 kg /. cm 2 G (charged H 2 / SiCl 4 molar ratio ~ 0.38) was charged with hydrogen, heated at 230 ° C with stirring and reacted at that temperature for 2.5 hours, then cooled to 5 ° C and reduced in pressure, It was analyzed by gas chromatography. As shown in Table 3, various metal chlorides gave good results. At this time, the maximum reaction pressure was 100 kg / cm 2 G. All chlorides were anhydrous.
比較例 2 銅金属のかわりに金属Ni粉6.46g(110mg−atm)を用
い,他は実施例3のNo.3と全く同一の仕込量,水素仕込
み圧及び反応条件で反応を行い終了後同様に冷却,降圧
及び反応液の分析を行った。反応液の組成はTCS/STC=
1.0/99.0モル比であり四塩化ケイ素の転化率は僅か0.7
%であった。従って本方法にに於いて銅金属の存在が必
須であることが判明した。 Comparative Example 2 6.46 g (110 mg-atm) of metallic Ni powder was used instead of copper metal, and the reaction was carried out exactly the same as No. 3 of Example 3 except that the reaction was carried out under the same charging amount, hydrogen charging pressure and reaction conditions. Then, cooling, depressurization and analysis of the reaction solution were performed. The composition of the reaction solution is TCS / STC =
The molar ratio is 1.0 / 99.0, and the conversion rate of silicon tetrachloride is only 0.7.
%Met. Therefore, the presence of copper metal was found to be essential in this method.
実施例4 実施例3のNo.3と全く同一の仕込み組成,同一の水素仕
込み圧,呼び同一の反応温度で行い反応時間を昇温直後
迄,昇温後5時間及び1時間反応を行って実施例1〜3
と同様の操作の後反応液を分析した。結果は実施例3の
No3とともに第4表に示した。Example 4 The same composition as in No. 3 of Example 3, the same hydrogen charging pressure, and the same reaction temperature as the nominal reaction temperature were used, and the reaction time was immediately after the temperature was raised, and the reaction was performed for 5 hours and 1 hour after the temperature was raised. Examples 1-3
After the same operation as above, the reaction solution was analyzed. The results are from Example 3.
It is shown in Table 4 together with No3.
実施例 5 実施例1と同一のオートクレーブに純度99.9%,200メッ
シュ又は純度98%,150メッシュの各々の金属ケイ素9.0g
を金属銅粉末B7.0g(110mg−atm),塩化ニッケル4.86g
(37.5mmol),塩化アルミニウム5.00g(37.5mmol)及
び四塩化ケイ素130g(765mmol)とともに仕込み,室温
で各々圧力110Kg/cm2Gに水素で加圧した後,200℃5時間
加熱撹拌反応を行った(最高反応圧170Kg/cm2G)後前記
実施例1〜4と同様に冷却,降圧後反応液を分析した。
結果は第5表に示したように金属ケイ素の純度等による
差は認められず,安価な98%ケイ素を使用して差し支え
ないことが判明した。 Example 5 9.0 g of each metal silicon having a purity of 99.9%, 200 mesh or a purity of 98%, 150 mesh was placed in the same autoclave as in Example 1.
Copper metal powder B 7.0g (110mg-atm), nickel chloride 4.86g
(37.5 mmol), aluminum chloride 5.00 g (37.5 mmol) and silicon tetrachloride 130 g (765 mmol) were charged, and each was pressurized to 110 Kg / cm 2 G with hydrogen at room temperature and then heated and stirred at 200 ° C for 5 hours. (Maximum reaction pressure 170 Kg / cm 2 G), the reaction liquid was analyzed after cooling and reducing the pressure in the same manner as in Examples 1 to 4.
As shown in Table 5, no difference was found depending on the purity of metallic silicon, and it was found that inexpensive 98% silicon could be used.
実施例 6 実施例1〜5と同一のオートクレーブに,塩化アルミニ
ウム37.5mmol又は臭化アルミニウム37.5mmolを金属ケイ
素(純度99.9%,200メッシュ),金属銅粉末B7.00g(11
0mg−atm)塩化ニッケル4.86g(37.5mmol)及び四塩化
ケイ素176.7g(1.04mol)とともに入れ室温で水素を所
定圧に圧入し,所定温度及び所定時間反応を行った後前
記実施例1〜5と同様に冷却降圧後反応液を分析した。
結果は第6表に示した様に,ハロゲン化アルミニウムを
塩化アルミニウムないし臭化アルミニウムに換えても活
性は充分に認められることが判明した。更にこの方法に
於いては低温かつ短時間に於いても非常に高収率でトリ
クロロシランが得られ,STY(空間時間収量)で約1.6mol
/1.hrに達することが判明し,これは従来公知の500〜55
0℃での加圧流動床反応に相当ないしはこれを越えるも
のであり,極めて優れていることがわかった。Example 6 In the same autoclave as in Examples 1-5, aluminum chloride 37.5 mmol or aluminum bromide 37.5 mmol was charged with metallic silicon (purity 99.9%, 200 mesh) and metallic copper powder B7.00 g (11
(0 mg-atm) Nickel chloride (4.86 g, 37.5 mmol) and silicon tetrachloride (176.7 g, 1.04 mol) were added to the mixture, hydrogen was introduced at a predetermined pressure at room temperature, and the mixture was reacted at a predetermined temperature for a predetermined time. After cooling and depressurizing in the same manner as above, the reaction solution was analyzed.
As a result, as shown in Table 6, it was found that the activity was sufficiently observed even when the aluminum halide was replaced with aluminum chloride or aluminum bromide. Furthermore, in this method, trichlorosilane was obtained in a very high yield even at low temperature and in a short time, and the STY (space time yield) was about 1.6 mol.
It was found to reach /1.hr, which is 500-55
It was found to be extremely excellent, being equivalent to or exceeding the pressure fluidized bed reaction at 0 ° C.
実施例 7 トルエン中で塩化第一銅と塩化アルミニウムを等モル量
混合し撹拌させたところ大部分が均一に溶解して反応し
た。これからトルエンを減圧留去させ,残固体を充分乾
燥したもの8.70g(AlCl3およびCuClおのおの37.5mmol相
当),金属銅粉末B7.00g(110mg−atm),金属ケイ素
(純度99.9%)9.00g(320mg−atm)及び四塩化ケイ素1
30g(765mmol)をいれ,水素で55Kg/cm2Gに加圧した後
実施例1〜6と同様に冷却,降圧及び反応液の分析を行
った。反応液の組成はトリクロロシラン8.6モル%及び
四塩化ケイ素91.4モル%となり実施例3のNo.1と同等の
結果を与えた。 Example 7 When cuprous chloride and aluminum chloride were mixed in equimolar amounts in toluene and stirred, most of them were uniformly dissolved and reacted. From this, toluene was distilled off under reduced pressure, and the remaining solid was sufficiently dried, 8.70 g (equivalent to 37.5 mmol of each of AlCl 3 and CuCl), metallic copper powder B7.00 g (110 mg-atm), metallic silicon (purity 99.9%) 9.00 g ( 320 mg-atm) and silicon tetrachloride 1
After adding 30 g (765 mmol) and pressurizing to 55 Kg / cm 2 G with hydrogen, cooling, depressurization and analysis of the reaction solution were performed in the same manner as in Examples 1-6. The composition of the reaction solution was 8.6 mol% of trichlorosilane and 91.4 mol% of silicon tetrachloride, and the result was the same as that of No. 1 of Example 3.
実施例 8 実施例1〜7と同一のオートクレーブ中に実施例3のN
o.1と全く同一量の金属ケイ素,金属銅,塩化アルミニ
ウム及び四塩化ケイ素を入れ更に塩化ニッケル4.86g(3
7.5mmol)を加え,実施例3及び4と同一の水素圧及び
反応温度で1時間反応を行った後実施例1〜7と同様に
冷却,降圧及び反応液の分析を行った。反応液組成はト
リクロロシラン15.3モル%四塩化ケイ素84.7モル%であ
り実施例4のNo.3に比較してさらに高い値であり,塩化
第一銅及び塩化ニッケルの相乗効果が認められた。Example 8 N of Example 3 in the same autoclave as in Examples 1-7.
Put the same amount of metallic silicon, metallic copper, aluminum chloride and silicon tetrachloride as o.1 and add nickel chloride 4.86g (3
7.5 mmol) was added and the reaction was carried out for 1 hour at the same hydrogen pressure and reaction temperature as in Examples 3 and 4, and then cooling, depressurization and analysis of the reaction solution were performed in the same manner as in Examples 1-7. The reaction solution composition was 15.3 mol% of trichlorosilane and 84.7 mol% of silicon tetrachloride, which was a higher value than No. 3 of Example 4, and a synergistic effect of cuprous chloride and nickel chloride was recognized.
実施例 9 実施例1と同一量の金属銅,金属ケイ素,塩化アルミニ
ウム及び四塩化ケイ素と実施例1の塩化銅と等モル量の
種々の金属臭化物及びヨウ化物を実施例1と同一のオー
トクレーブに入れ水素仕込圧55Kg/cm2G(仕込H2/SiCl4
モル比〜0.38)で水素を圧入した後230Cに撹拌し乍ら加
熱し当該温度で2.5時間反応を行った後(最高反応圧力1
00Kg/cm2G),実施例1と同様に冷却,降圧後反応液を
分析した。結果を第7表に示した。尚反応に使用した臭
化物及びヨウ化物は総て無水物である。Example 9 The same amount of metal copper, metal silicon, aluminum chloride, and silicon tetrachloride as in Example 1 and the same amount of various metal bromides and iodides as the copper chloride of Example 1 were placed in the same autoclave as in Example 1. Filling hydrogen charge pressure 55 kg / cm 2 G (charge H 2 / SiCl 4
After injecting hydrogen at a molar ratio of ~ 0.38), stirring at 230C and heating while reacting at that temperature for 2.5 hours (maximum reaction pressure 1
00 Kg / cm 2 G), cooling and reducing the pressure in the same manner as in Example 1 and analyzing the reaction solution. The results are shown in Table 7. The bromide and iodide used in the reaction are all anhydrous.
以上の如く種々の臭化物ヨウ化物で極めて高い活性を示
すことが判明した。 As described above, it was found that various bromide iodides exhibit extremely high activity.
───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 昭59−45920(JP,A) ─────────────────────────────────────────────────── ─── Continuation of the front page (56) References JP-A-59-45920 (JP, A)
Claims (3)
は水素及び塩化水素と反応せしめてトリクロロシランを
製造する方法において、該四塩化ケイ素をその臨海温度
以下の液体状態として、該反応系を気−液−固相の不均
一反応とすると共に,該気−液−固相の不均一反応を,
金属銅,金属のハロゲン化物及びハロゲン化アルミニウ
ムの存在下に行うことを特徴とするトリクロロシランの
製造方法。1. A method for producing trichlorosilane by reacting silicon tetrachloride and metallic silicon with hydrogen or hydrogen and hydrogen chloride, wherein the reaction system is vaporized by bringing the silicon tetrachloride into a liquid state below its critical temperature. -The liquid-solid phase heterogeneous reaction, and the gas-liquid-solid phase heterogeneous reaction,
A method for producing trichlorosilane, which is carried out in the presence of metallic copper, a metal halide and aluminum halide.
Ni,Zn,Zr,Mo,Ru,Rh,Pd,Ag,Sn,Sb,W,Hg,Pt,Pbの塩化物,
臭化物およびヨウ化物からなる群より選択される金属ハ
ロゲン化物である特許請求の範囲第1項に記載の方法。2. The metal halide is Cu, Ti, V, Cr, Mn, Fe, Co,
Chlorides of Ni, Zn, Zr, Mo, Ru, Rh, Pd, Ag, Sn, Sb, W, Hg, Pt, Pb,
The method of claim 1 which is a metal halide selected from the group consisting of bromide and iodide.
ウム,塩化アルミニウム,臭化アルミニウムおよびヨウ
化アルミニウムからなる群より選択されるハロゲン化ア
ルミニウムである特許請求の範囲第1項に記載の方法。3. A method according to claim 1 wherein the aluminum halide is an aluminum halide selected from the group consisting of aluminum fluoride, aluminum chloride, aluminum bromide and aluminum iodide.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23922986A JPH0788212B2 (en) | 1986-10-09 | 1986-10-09 | Method for producing trichlorosilane |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23922986A JPH0788212B2 (en) | 1986-10-09 | 1986-10-09 | Method for producing trichlorosilane |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6395107A JPS6395107A (en) | 1988-04-26 |
| JPH0788212B2 true JPH0788212B2 (en) | 1995-09-27 |
Family
ID=17041667
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23922986A Expired - Lifetime JPH0788212B2 (en) | 1986-10-09 | 1986-10-09 | Method for producing trichlorosilane |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0788212B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102557041B (en) * | 2010-12-24 | 2015-05-13 | 江苏中能硅业科技发展有限公司 | Method and device for continuous production of silicochloroform |
| MY179882A (en) * | 2013-09-30 | 2020-11-18 | Lg Chemical Ltd | Method for producing trichlorosilane |
-
1986
- 1986-10-09 JP JP23922986A patent/JPH0788212B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6395107A (en) | 1988-04-26 |
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