JPH0793240B2 - Method for manufacturing laminated film capacitor - Google Patents
Method for manufacturing laminated film capacitorInfo
- Publication number
- JPH0793240B2 JPH0793240B2 JP2144781A JP14478190A JPH0793240B2 JP H0793240 B2 JPH0793240 B2 JP H0793240B2 JP 2144781 A JP2144781 A JP 2144781A JP 14478190 A JP14478190 A JP 14478190A JP H0793240 B2 JPH0793240 B2 JP H0793240B2
- Authority
- JP
- Japan
- Prior art keywords
- dielectric film
- film
- dielectric
- solvent
- film capacitor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000003990 capacitor Substances 0.000 title claims description 10
- 238000004519 manufacturing process Methods 0.000 title claims description 4
- 238000000034 method Methods 0.000 title description 7
- 239000010408 film Substances 0.000 claims description 63
- 239000002904 solvent Substances 0.000 claims description 13
- 239000000463 material Substances 0.000 claims description 7
- 239000011104 metalized film Substances 0.000 claims description 5
- 239000003973 paint Substances 0.000 claims description 5
- 239000004721 Polyphenylene oxide Substances 0.000 claims description 3
- 229920006380 polyphenylene oxide Polymers 0.000 claims description 3
- 229920000515 polycarbonate Polymers 0.000 claims description 2
- 239000004417 polycarbonate Substances 0.000 claims description 2
- 229920000728 polyester Polymers 0.000 claims description 2
- 238000010438 heat treatment Methods 0.000 description 9
- 230000003746 surface roughness Effects 0.000 description 5
- 230000015556 catabolic process Effects 0.000 description 4
- 239000003989 dielectric material Substances 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 238000003825 pressing Methods 0.000 description 3
- 239000002184 metal Substances 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000004922 lacquer Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000000935 solvent evaporation Methods 0.000 description 1
Landscapes
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Description
【発明の詳細な説明】 産業上の利用分野 本発明は、一般の電子機器において使用される絶縁フィ
ルム上に金属を蒸着した金属化フィルムの中間に誘電体
膜を挟んで積層する積層フィルムコンデンサの製造方法
に関する。TECHNICAL FIELD The present invention relates to a laminated film capacitor in which a dielectric film is sandwiched between metallized films obtained by vapor-depositing a metal on an insulating film used in general electronic equipment. It relates to a manufacturing method.
従来の技術 従来、積層フィルムコンデンサの誘電体膜は、溶剤で誘
電体材料を溶解した塗料を両面金属化フィルム上の両面
もしくは片面にラッカリングし、熱風炉で溶剤を蒸発さ
せて形成している。しかし市場での小型化要望が強い現
状の中で、誘電体膜薄膜化によりフィルムコンデンサを
小型化する場合、誘電体膜を薄くしても従来品と同程度
の耐電圧特性を維持することが必要である。2. Description of the Related Art Conventionally, a dielectric film of a laminated film capacitor is formed by lacquering a paint prepared by dissolving a dielectric material with a solvent on both sides or one side of a double-sided metallized film and evaporating the solvent with a hot air oven. . However, in the current market where there is a strong demand for miniaturization, when the film capacitor is miniaturized by thinning the dielectric film, it is possible to maintain the same withstand voltage characteristics as conventional products even if the dielectric film is made thinner. is necessary.
このように塗料のラッカリング後、溶剤を急速に蒸発さ
せ、誘電体膜を形成する方法では溶剤の蒸発に伴い誘電
体膜内部にボイドが発生し、表面粗さも粗くなる。As described above, in the method of forming the dielectric film by rapidly evaporating the solvent after lacquering the paint, voids are generated inside the dielectric film as the solvent evaporates, and the surface roughness becomes rough.
このような誘電体膜に電圧を印加した場合、誘電体膜内
部のボイドと、表面の粗さは絶縁破壊電圧低下の原因と
なる。When a voltage is applied to such a dielectric film, voids inside the dielectric film and surface roughness cause a decrease in the dielectric breakdown voltage.
ラッカリング後の溶剤の蒸発量を抑え、誘電体膜内部の
ポインドの低域と表面の粗さを改善する方法として、溶
剤の変更、塗料の誘電体材料高濃度化、溶剤乾燥速度の
低速化が試みられ、種々の提案がなされてる。As a method of suppressing the evaporation amount of the solvent after lacquering and improving the low range of the inside of the dielectric film and the roughness of the surface, changing the solvent, increasing the concentration of the dielectric material in the paint, and slowing the solvent drying speed Has been tried and various proposals have been made.
発明が解決しようとする問題点 しかしながら、高沸点の溶剤に変更することで、溶剤の
蒸発量を抑えると、誘電体膜中に残留する溶剤の量が多
くなり、フィルムコンデンサとしたときに、諸特性に悪
影響を及ぼす。また塗料の誘電体材料高濃度化は、溶剤
の絶対量が少なくなり、粘度が高くなるためラッカリン
グ性が悪くなる。Problems to be Solved by the Invention However, if the solvent evaporation amount is suppressed by changing to a solvent having a high boiling point, the amount of solvent remaining in the dielectric film increases, and when a film capacitor is used, various problems occur. It adversely affects the characteristics. Further, when the concentration of the dielectric material in the coating material is increased, the absolute amount of the solvent is decreased and the viscosity is increased, so that the lacquering property is deteriorated.
本発明は、上記課題を解決するもので、ラッカリング後
の誘電体膜内部のボイドの低減と、表面粗さの改善によ
って耐電圧特性の向上した積層フィルムコンデンサを提
供することを目的とする。The present invention solves the above problems, and an object of the present invention is to provide a laminated film capacitor having improved withstand voltage characteristics by reducing voids inside the dielectric film after racking and improving surface roughness.
問題点を解決するための手段 本発明は上記目的を達成するために、誘電体膜を形成す
る材料を溶剤で溶かした塗料を両面金属化フィルムの少
なくとも一面にラッカリングした後、加圧しながら加熱
することによって誘電体膜を形成し、その後このフィル
ムを積層したものである。Means for Solving the Problems In order to achieve the above object, the present invention lacquers at least one surface of a double-sided metallized film with a paint in which a material for forming a dielectric film is dissolved in a solvent, and then heats while applying pressure. By doing so, a dielectric film is formed, and then this film is laminated.
作用 上記のようにラッカリング後の誘電体膜を加圧しながら
加熱することにより、誘電体塗膜形成時の誘電体膜内部
でのボイド発生が抑制されるとともに一旦発生したボイ
ドも生長が抑制されて障害となる大きさに達し難くな
る。したがって誘電体膜の耐電圧特性は向上する。Action By heating the dielectric film after lacquering while applying pressure as described above, the generation of voids inside the dielectric film during the formation of the dielectric coating film is suppressed, and the growth of voids that have once occurred is also suppressed. It becomes difficult to reach the obstacle size. Therefore, the withstand voltage characteristic of the dielectric film is improved.
実施例 以下、本発明の実施例について第１図〜第３図を参照し
ながら説明する。Embodiments Embodiments of the present invention will be described below with reference to FIGS. 1 to 3.
実施例（１） ヒートプレス機を用いて、誘電体材料がポリフェニレン
オキサイドであり、膜厚が0.8μｍである誘電体膜の加
熱・加圧を行なう。加熱温度を80℃,130℃,150℃,170
℃,190℃、加圧圧力を10g/cm2、加熱・加圧時間を５秒
として、本発明の誘電体膜を形成する。上記の方法で形
成した誘電体膜の耐電圧特性は、従来の誘電体膜より優
れたものであった。Example (1) A dielectric film whose dielectric material is polyphenylene oxide and whose film thickness is 0.8 μm is heated and pressed using a heat press machine. Heating temperature 80 ℃, 130 ℃, 150 ℃, 170
The dielectric film of the present invention is formed at a temperature of 190 ° C., a pressure of 10 g / cm 2 , and a heating / pressing time of 5 seconds. The dielectric strength characteristics of the dielectric film formed by the above method were superior to those of the conventional dielectric film.
第１図（ａ），（ｂ）に本実施例で形成した誘電体膜
と、従来の誘電体膜との単位厚みあたりの耐電圧特性の
比較を示す。図中、●印は従来の誘電体膜の平均値を示
し、○印は本発明の平均値を示す。平均値に付した縦線
は実験値のバラツキの範囲を示す。以下の各図も同様で
ある。単位厚みあたりの初期放電電圧は平均値で最大15
0V/μｍ向上する。ここで述べる初期放電電圧とは、誘
電体膜と両面金属化フィルムとの界面において、欠陥部
分の金属が飛散して絶縁が回復する初期の電圧であり、
絶縁破壊電圧とはフィルムコンデンサとして機能しなく
なる電圧である。1 (a) and 1 (b) show a comparison of withstand voltage characteristics per unit thickness between the dielectric film formed in this example and a conventional dielectric film. In the figure, ● indicates the average value of the conventional dielectric film, and ○ indicates the average value of the present invention. The vertical line attached to the average value indicates the range of variation in the experimental value. The following figures are also the same. The maximum initial discharge voltage per unit thickness is 15
Improves 0 V / μm. The initial discharge voltage described here is an initial voltage at which the metal of the defective portion scatters at the interface between the dielectric film and the double-sided metallized film to restore the insulation,
The dielectric breakdown voltage is a voltage at which the film capacitor does not function.
実施例（２） 実施例（２）の誘電体膜形成の各条件は実施例（１）と
同様であり、誘電体膜の加熱・加圧時間を15秒として、
本発明の誘電体膜を形成する。上記の方法で形成した誘
電体膜の耐電圧特性は、従来の誘電体膜より優れたもの
であった。第２図（ａ），（ｂ）に本実施例で形成した
誘電体膜と、従来の誘電体膜との単位厚みあたりの耐電
圧特性の比較を示す。単位厚みあたりの初期放電電圧は
平均値で最大26V/μｍ、絶縁破壊電圧は平均値で最大11
0V/μｍ向上する。Example (2) The conditions for forming the dielectric film in Example (2) are the same as those in Example (1), and the heating / pressurizing time of the dielectric film is 15 seconds.
The dielectric film of the present invention is formed. The dielectric strength characteristics of the dielectric film formed by the above method were superior to those of the conventional dielectric film. 2 (a) and 2 (b) show a comparison of withstand voltage characteristics per unit thickness between the dielectric film formed in this example and the conventional dielectric film. The average initial discharge voltage per unit thickness is 26 V / μm maximum, and the breakdown voltage is 11 average maximum.
Improves 0 V / μm.
実施例（３） 加熱温度を150℃、加圧圧力を10g/cm2,200g/cm2,400g/c
m2,600g/cm2,800g/cm2,1000g/cm2、加熱・加圧時間を５
秒として、他は実施例（１）と同様の方法で本発明の誘
電体膜を形成する。上記の方法で形成した誘電体膜の耐
電圧特性は、従来の誘電体膜より優れたものであった。
第３図（ａ），（ｂ）に本実施例で形成した誘電体膜と
従来の誘電体膜との単位厚みあたりの初期放電電圧は平
均値で最大32V/μｍ、絶縁破壊電圧は平均値で最大215V
/μｍ向上する。Example (3) The heating temperature was 150 ° C. and the pressure was 10 g / cm 2 , 200 g / cm 2 , 400 g / c.
m 2 , 600g / cm 2 , 800g / cm 2 , 1000g / cm 2 , heating / pressurizing time 5
In seconds, the dielectric film of the present invention is formed by the same method as in Example (1) except for the above. The dielectric strength characteristics of the dielectric film formed by the above method were superior to those of the conventional dielectric film.
3 (a) and 3 (b), the average initial discharge voltage per unit thickness of the dielectric film formed in this example and the conventional dielectric film is 32 V / μm at the maximum, and the breakdown voltage is the average value. Up to 215V
/ μm improved.
以上各実施例において誘電体膜材料としてポリフェニレ
ンオキサイドを用いた例を示したが、誘電体膜材料とし
てはポリカーボネートまたはポリエステルも使用可能で
同様な耐電圧特性の向上効果がある。In each of the above embodiments, an example using polyphenylene oxide as the dielectric film material has been shown. However, polycarbonate or polyester can be used as the dielectric film material, and the same effect of improving the withstand voltage characteristics can be obtained.
また、上記各実施例において示した耐電圧特性図からも
明らかなように誘電体膜厚が0.1μｍから5.0μｍとなる
ように塗料を調製し、ラッカリング後の誘電体膜を80℃
から190℃の温度で加熱するとともに、10g/cm2から1000
g/cm2の圧力の加圧を0.1秒から60秒間の範囲で行なえ
ば、誘電体膜の内部のボイドの低減と、表面の粗さの改
善に特に有効であり、誘電体膜の耐電圧特性向上に著し
い効果がある。Further, as is clear from the withstand voltage characteristic charts shown in the above-mentioned respective examples, the coating material was prepared so that the dielectric film thickness was 0.1 μm to 5.0 μm, and the dielectric film after lacquering was heated to 80 ° C.
From 10g / cm 2 to 1000
Applying a pressure of g / cm 2 in the range of 0.1 to 60 seconds is particularly effective in reducing voids inside the dielectric film and improving the surface roughness. It has a remarkable effect on improving the characteristics.
なお、本実施例では誘電体膜を加熱・加圧する手段とし
て、ヒートプレス機を用いたが、その他の手段としてホ
ットローラー等を用いても良く、ラッカリング後であっ
て、積層する前に誘電体膜を加熱・加圧することで耐電
圧特性の向上が図れ、初期の目的を達成できる。In this example, a heat press was used as a means for heating and pressurizing the dielectric film, but a hot roller or the like may be used as another means. By heating and pressurizing the body membrane, the withstand voltage characteristics can be improved and the initial purpose can be achieved.
発明の効果 以上のように本発明では、誘電体膜を積層する前に加熱
・加圧することで、誘電体膜内部のボイドを低減し、表
面の粗さを改善することができる。したがって誘電体膜
の高密度化による耐電圧特性の向上が図れ、積層フィル
ムコンデンサの信頼性が向上する。EFFECTS OF THE INVENTION As described above, in the present invention, by heating and pressurizing the dielectric films before stacking them, voids inside the dielectric films can be reduced and the surface roughness can be improved. Therefore, withstand voltage characteristics can be improved by increasing the density of the dielectric film, and the reliability of the laminated film capacitor can be improved.
第１図（ａ），（ｂ）、第２図（ａ），（ｂ）、第３図
（ａ），（ｂ）は本発明による誘電体膜と、従来の誘電
体膜との単位厚みあたりの耐電圧特性を比較して示す図
である。1 (a), (b), 2 (a), (b), and 3 (a), (b) are unit thicknesses of the dielectric film according to the present invention and a conventional dielectric film. It is a figure which compares and shows the withstand voltage characteristic.
Claims (2)
金属化フィルム上の少なくとも一面にラッカリングした
後、加圧しながら加熱することにより、溶剤を蒸発乾燥
させ、その後このフィルムを積層することを特徴とする
積層フィルムコンデンサの製造方法。1. A paint prepared by dissolving a dielectric film material in a solvent is lacquered on at least one surface of a double-sided metallized film, and then heated while being pressurized to evaporate and dry the solvent, and then the film is laminated. A method of manufacturing a laminated film capacitor, comprising:
ェニレンオキサイドまたはポリエステルである請求項１
記載の積層フィルムコンデンサの製造方法。2. The dielectric film material is polycarbonate, polyphenylene oxide or polyester.
A method for producing the laminated film capacitor described.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2144781A JPH0793240B2 (en) | 1990-06-01 | 1990-06-01 | Method for manufacturing laminated film capacitor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2144781A JPH0793240B2 (en) | 1990-06-01 | 1990-06-01 | Method for manufacturing laminated film capacitor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0437108A JPH0437108A (en) | 1992-02-07 |
| JPH0793240B2 true JPH0793240B2 (en) | 1995-10-09 |
Family
ID=15370291
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2144781A Expired - Lifetime JPH0793240B2 (en) | 1990-06-01 | 1990-06-01 | Method for manufacturing laminated film capacitor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0793240B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2018156965A (en) * | 2017-03-15 | 2018-10-04 | 日立化成株式会社 | Insulating film for capacitor, and film capacitor using the same |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6027175B2 (en) * | 1978-02-07 | 1985-06-27 | 松下電器産業株式会社 | Capacitor manufacturing method |
| JPS6199321A (en) * | 1984-10-22 | 1986-05-17 | 松下電器産業株式会社 | Coil type resin film capacitor |
| JPS62213231A (en) * | 1986-03-14 | 1987-09-19 | 松下電器産業株式会社 | Laminated film capacitor |
-
1990
- 1990-06-01 JP JP2144781A patent/JPH0793240B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0437108A (en) | 1992-02-07 |
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