JPH0793472B2 - Semiconductor laser device - Google Patents
Semiconductor laser deviceInfo
- Publication number
- JPH0793472B2 JPH0793472B2 JP19942887A JP19942887A JPH0793472B2 JP H0793472 B2 JPH0793472 B2 JP H0793472B2 JP 19942887 A JP19942887 A JP 19942887A JP 19942887 A JP19942887 A JP 19942887A JP H0793472 B2 JPH0793472 B2 JP H0793472B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- face
- semiconductor laser
- laser device
- reflectance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
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- Semiconductor Lasers (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 この発明は、OTDR（光ファイバ破断点探索装置）などの
高出力が必要なシステムの光源として応用される半導体
レーザ装置に関するものである。Description: TECHNICAL FIELD The present invention relates to a semiconductor laser device applied as a light source for a system such as an OTDR (optical fiber break point searching device) that requires high output.
第３図は従来の長波長帯LDの前端面コーティングを示す
側面図であり、図において１はLDチップであり、2,3,4,
5はLDチップ１の前端面に蒸着された保護膜であり、そ
れぞれSi3N4λ/2膜、アモルフアスSi（ａ−Si）λ/4膜,
Al2O3λ/4膜,SiO2λ/4膜、６はLDチップ１から放出され
る前端面の光出力である。FIG. 3 is a side view showing a front end surface coating of a conventional long wavelength band LD, in which 1 is an LD chip, and 2, 3, 4,
Reference numeral 5 denotes a protective film deposited on the front end surface of the LD chip 1, which is a Si 3 N 4 λ / 2 film, an amorphous Si (a-Si) λ / 4 film,
Al 2 O 3 λ / 4 film, SiO 2 λ / 4 film, and 6 are optical outputs of the front end face emitted from the LD chip 1.
次に作用について説明する。半導体レーザをOTDR等の光
源として応用する際には、LDチップ１の前端面からの光
出力６を大きくするために前端面の反射率を減少させる
必要がある。第３図において、LDチップ１の前端面反射
率は、Si3N4λ/2膜2,a−Siλ/4膜3,Al2O3λ/4膜4,SiO2
λ/4膜５をコーティングすることにより計算上は、31％
から16％に減少される。しかし、実際の前端面反射率
は、第４図に示されるように、Si3N4λ/2膜の膜厚の変
動により、個々のLDに対して16％〜43％まで大きくばら
つく。Next, the operation will be described. When the semiconductor laser is applied as a light source for OTDR or the like, it is necessary to reduce the reflectance of the front end face in order to increase the light output 6 from the front end face of the LD chip 1. In FIG. 3, the front facet reflectance of the LD chip 1 is calculated as follows: Si 3 N 4 λ / 2 film 2, a-Si λ / 4 film 3, Al 2 O 3 λ / 4 film 4, SiO 2
31% in calculation by coating λ / 4 film 5
From 16%. However, as shown in FIG. 4, the actual front facet reflectance greatly varies from 16% to 43% for each LD due to the variation in the film thickness of the Si 3 N 4 λ / 2 film.
従来の半導体レーザ装置は以上のように構成されている
ので、Si3N4λ/2膜の膜厚の変動により、前端面反射率
が大きくばらつくという問題点があった。Since the conventional semiconductor laser device is configured as described above, there is a problem that the front facet reflectivity greatly varies due to the variation in the film thickness of the Si 3 N 4 λ / 2 film.
この発明は上記のような問題点を解決するためになされ
たもので、前端面反射率のばらつきを小さく抑えること
ができるとともに、前端面反射率を31％から20％前後に
減少できる半導体レーザ装置を得ることを目的とする。The present invention has been made to solve the above problems, and a semiconductor laser device capable of suppressing variations in front end face reflectance to a small level and reducing the front end face reflectance from around 31% to around 20%. Aim to get.
この発明に係る半導体レーザ装置は、LDチップの前端面
にSi3N4λ/2膜,Al2O3λ/4膜,SiO2λ/4膜の３層コーティ
ングを施したものである。In the semiconductor laser device according to the present invention, the LD chip has a front end face coated with a three-layer coating of a Si 3 N 4 λ / 2 film, an Al 2 O 3 λ / 4 film, and a SiO 2 λ / 4 film.
この発明における半導体レーザ装置は、LDチップの前端
面にSi3N4λ/2膜,Al2O3λ/4膜,SiO2λ/4膜からなる３層
コーティングを施すことにより、前端面反射率のばらつ
きを小さく抑えることができ、また前端面反射率を31％
から20％前後に減少できる。In the semiconductor laser device according to the present invention, the front end face of the LD chip is formed by applying a three-layer coating including a Si 3 N 4 λ / 2 film, an Al 2 O 3 λ / 4 film, and a SiO 2 λ / 4 film to the front end face. The dispersion of reflectance can be kept small, and the front end face reflectance is 31%.
Can be reduced to around 20%.
以下、この発明の一実施例を図について説明する。 An embodiment of the present invention will be described below with reference to the drawings.
第１図は本発明の一実施例による半導体レーザ装置の前
端面コーティングを示す側面図であり、図において１は
LDチップ、２はSi3N4λ/2膜、４はAl2O3λ/4膜,5はSiO2
λ/4膜、６は前端面光出力である。FIG. 1 is a side view showing a front end surface coating of a semiconductor laser device according to an embodiment of the present invention.
LD chip, 2 Si 3 N 4 λ / 2 film, 4 Al 2 O 3 λ / 4 film, 5 SiO 2
The λ / 4 film, 6 is the front facet light output.
次に作用について説明する。LDチップ１の前端面には、
第１図に示されるようにSi3N4λ/2膜,Al2O3λ/4膜,SiO2
λ/4膜の３層コーティングが施されており、前端面反射
率は計算上は31％から20％に減少され、前端面から光出
力が大きくなる。第２図は実際の前端面反射率のSi3N4
の膜厚依存性を示す図であるが、前端面反射率のばらつ
きは15％〜22％であり、従来の前端面反射率のばらつき
（16％〜43％）に比して非常に小さい。Next, the operation will be described. On the front end face of the LD chip 1,
As shown in Fig. 1, Si 3 N 4 λ / 2 film, Al 2 O 3 λ / 4 film, SiO 2
A three-layer coating of λ / 4 film is applied, and the front end face reflectance is calculated to be reduced from 31% to 20%, and the light output from the front end face is increased. Figure 2 shows the actual front facet reflectivity of Si 3 N 4
Is a graph showing the film thickness dependency of the front end face, the dispersion of the front end face reflectance is 15% to 22%, which is much smaller than the conventional dispersion of the front end face reflectance (16% to 43%).
以上のように、この発明によれば、LDの前端面にSi3N4
λ/2膜,Al2O3λ/4膜,SiO2λ/4膜の３層コーティングを
施したので、前端面反射率のSi3N4膜厚に対するばらつ
きを小さく抑えることができ、また前端面反射率を減少
させ前端面からの光出力を大きくできる効果がある。As described above, according to the present invention, Si 3 N 4 is formed on the front end face of the LD.
Since the three-layer coating of λ / 2 film, Al 2 O 3 λ / 4 film, and SiO 2 λ / 4 film is applied, it is possible to suppress the dispersion of the front end face reflectance with respect to the Si 3 N 4 film thickness, and This has the effect of reducing the reflectance of the front end face and increasing the light output from the front end face.
第１図はこの発明の一実施例による半導体レーザ装置の
前端面コーティングを示す側面図、第２図は本実施例に
おける前端面反射率のSi3N4膜厚依存性を示す図、第３
図は従来の半導体レーザ装置の前端面コーティングを示
す側面図、第４図は従来の前端面反射率のSi3N4膜厚依
存性を示す図である。 １はLDチップ、２はSi3N4λ/2膜,4はAl2O3λ/4膜,5はSi
O2λ/4膜。 なお図中同一符号は同一又は相当部分を示す。FIG. 1 is a side view showing a front end face coating of a semiconductor laser device according to an embodiment of the present invention, FIG. 2 is a view showing a Si 3 N 4 film thickness dependence of a front end face reflectance in the present embodiment, and FIG.
FIG. 4 is a side view showing the front end face coating of a conventional semiconductor laser device, and FIG. 4 is a view showing the Si 3 N 4 film thickness dependence of the conventional front end face reflectance. 1 is an LD chip, 2 is a Si 3 N 4 λ / 2 film, 4 is an Al 2 O 3 λ / 4 film, and 5 is Si
O 2 λ / 4 film. The same reference numerals in the drawings indicate the same or corresponding parts.
Claims (1)
第３層目のSiO2のλ/4膜からなる３層構造の前端面コー
ティングを施したことを特徴とする半導体レーザ装置。1. In a long-wavelength semiconductor laser device, a first layer of Si 3 N 4 λ / 2 film, a second layer of Al 2 O 3 λ / 4 film,
A semiconductor laser device characterized in that a front end face coating of a three-layer structure composed of a third layer λ / 4 film of SiO 2 is applied.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19942887A JPH0793472B2 (en) | 1987-08-10 | 1987-08-10 | Semiconductor laser device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19942887A JPH0793472B2 (en) | 1987-08-10 | 1987-08-10 | Semiconductor laser device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6442880A JPS6442880A (en) | 1989-02-15 |
| JPH0793472B2 true JPH0793472B2 (en) | 1995-10-09 |
Family
ID=16407650
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19942887A Expired - Lifetime JPH0793472B2 (en) | 1987-08-10 | 1987-08-10 | Semiconductor laser device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0793472B2 (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3014208B2 (en) * | 1992-02-27 | 2000-02-28 | 三菱電機株式会社 | Semiconductor optical device |
| JPH10509283A (en) * | 1995-09-14 | 1998-09-08 | フィリップス エレクトロニクス ネムローゼ フェンノートシャップ | Semiconductor diode laser and method of manufacturing the same |
| JP2003204110A (en) | 2001-11-01 | 2003-07-18 | Furukawa Electric Co Ltd:The | Semiconductor laser device and semiconductor laser module using the same |
-
1987
- 1987-08-10 JP JP19942887A patent/JPH0793472B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6442880A (en) | 1989-02-15 |
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