JPH079536B2 - Photomask white spot defect repair device - Google Patents
Photomask white spot defect repair deviceInfo
- Publication number
- JPH079536B2 JPH079536B2 JP26281687A JP26281687A JPH079536B2 JP H079536 B2 JPH079536 B2 JP H079536B2 JP 26281687 A JP26281687 A JP 26281687A JP 26281687 A JP26281687 A JP 26281687A JP H079536 B2 JPH079536 B2 JP H079536B2
- Authority
- JP
- Japan
- Prior art keywords
- photomask
- laser beam
- laser light
- spot defect
- white spot
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000007547 defect Effects 0.000 title claims description 34
- 230000008439 repair process Effects 0.000 title claims description 4
- 230000003287 optical effect Effects 0.000 claims description 15
- 229910052751 metal Inorganic materials 0.000 claims description 12
- 239000002184 metal Substances 0.000 claims description 12
- 239000011521 glass Substances 0.000 claims description 10
- 239000000126 substance Substances 0.000 claims description 10
- 230000007246 mechanism Effects 0.000 claims description 8
- 238000007493 shaping process Methods 0.000 claims description 3
- 241000519995 Stachys sylvatica Species 0.000 claims 6
- 238000000034 method Methods 0.000 description 8
- 239000011651 chromium Substances 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000008021 deposition Effects 0.000 description 3
- 238000005286 illumination Methods 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 206010027146 Melanoderma Diseases 0.000 description 2
- 230000004075 alteration Effects 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000007689 inspection Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 101100269850 Caenorhabditis elegans mask-1 gene Proteins 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000001182 laser chemical vapour deposition Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000006303 photolysis reaction Methods 0.000 description 1
- 230000015843 photosynthesis, light reaction Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Preparing Plates And Mask In Photomechanical Process (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明はフォトマスク白点欠陥修正装置に関し,特にレ
ーザCVD法を用いた白点欠陥修正装置に関する。The present invention relates to a photomask white spot defect repairing apparatus, and more particularly to a white spot defect repairing apparatus using a laser CVD method.
ICやLSI等の製造に用いられるフォトマスクには黒点欠
陥,白点欠陥と呼ばれる2種類の欠陥が存在する。前者
は不要な部分に遮光膜となる金属膜(通常はクロム膜)
が残存している欠陥であり,後者は逆に必要な部分の金
属膜が欠除している欠陥である。フォトマスクにこれら
の欠陥が存在すると,ICやLSIの性能不良を引き起こし,
歩留りを低下させる原因となるため,これらの欠陥を修
正する必要が生じる。Photomasks used in the manufacture of ICs and LSIs have two types of defects called black spot defects and white spot defects. The former is a metal film (usually a chrome film) that serves as a light-shielding film in unnecessary areas.
Is the remaining defect, and the latter is, on the contrary, the defect in which the required portion of the metal film is lacking. The presence of these defects in the photomask causes poor performance of ICs and LSIs,
These defects will need to be repaired as they cause a decrease in yield.
現在,黒点欠陥の修正はレーザ光により金属膜を蒸発さ
せて除去する装置が実用化され,実際の生産ラインで使
用され歩留り向上に効果を上げている。一方,白点欠陥
の修正は古くはリフトオフ法により行なわれていたが,
この方法は修正工程が複雑で,長時間を要する上,二次
的な欠陥を引き起こす可能性がある等の欠点を有してい
た。At present, a device for vaporizing and removing a metal film by laser light has been put into practical use to correct black spot defects, and it is being used in an actual production line to improve the yield. On the other hand, the white spot defect was corrected by the lift-off method in the old days.
This method has the drawbacks that the repair process is complicated, it takes a long time, and secondary defects may occur.
最近,これにとってかわる方法として,いわゆるレーザ
CVD法による第6図に示すような修正装置が提案され,
実用化され始めている。第6図において,1はレーザ光
源,2は該レーザ光源1から出射されたレーザ光を拡大す
るビームエキスパンダ,4は拡大されたレーザ光の形を整
形する矩形スリット,10は前記レーザ光をフォトマスク1
4表面に集光する対物レンズ,9は該フォトマスク14を観
察する接眼光学系,15は該フォトマスク14を載置して移
動可能なXYステージ,16は該フォトマスク14表面に修正
物質を一定流量で供給する修正物質供給装置である。Recently, a so-called laser has been used as an alternative method.
A correction device by the CVD method as shown in Fig. 6 was proposed,
It is beginning to be put to practical use. In FIG. 6, 1 is a laser light source, 2 is a beam expander for expanding the laser light emitted from the laser light source 1, 4 is a rectangular slit for shaping the shape of the expanded laser light, and 10 is the laser light. Photo mask 1
4 an objective lens for focusing on the surface, 9 an eyepiece optical system for observing the photomask 14, 15 an XY stage movable with the photomask 14 mounted, 16 a correction substance on the surface of the photomask 14 It is a correction substance supply device that supplies at a constant flow rate.
第6図に示す装置は,チェンバ19内に設置されたフォト
マスク14表面に修正物質としてCr(CO)6(クロムカル
ボニル)を導き,白点欠陥部にレーザ光を照射すること
により修正物質を光分解あるいは熱分解して,欠陥部に
金属クロムを析出させるようにしたものである。ここ
で,上記CVD反応をチェンバ内で行なう必要があるの
は,修正物質であるCr(CO)6が有毒であること,また
空気や水蒸気等の存在する雰囲気中では良質の金属膜が
得られない等の理由による。The apparatus shown in FIG. 6 introduces Cr (CO) 6 (chromium carbonyl) as a correction substance on the surface of the photomask 14 installed in the chamber 19 and irradiates the white spot defect portion with a laser beam to remove the correction substance. It is designed to deposit metallic chromium in the defect portion by photolysis or thermal decomposition. Here, it is necessary to carry out the above-mentioned CVD reaction in the chamber because Cr (CO) 6 , which is a correction substance, is toxic, and a high-quality metal film can be obtained in the presence of air, water vapor, etc. It depends on the reason such as not.
第6図の修正装置では,レーザ光はビームエキスパンダ
2で拡大された後,スリット4と呼ばれる矩形開口を通
して,対物レンズ10によりフォトマスク14上に集光され
る。そしてスリット4とフォトマスク14の位置関係は,
スリット4の像が対物レンズ10によりフォトマスク14上
に縮小して結像されるような関係に設置されており,こ
の像と同じ大きさで金属膜を析出させることができる。
この装置における最大の修正サイズは25μm平方程度で
あり,それ以上のサイズの修正は1回では困難である。
これは次のような理由による。In the correction device of FIG. 6, the laser light is expanded by the beam expander 2 and then focused on the photomask 14 by the objective lens 10 through a rectangular opening called a slit 4. And the positional relationship between the slit 4 and the photomask 14 is
The image of the slit 4 is placed in such a relationship that the image is reduced and formed on the photomask 14 by the objective lens 10, and the metal film can be deposited in the same size as this image.
The maximum correction size in this device is about 25 μm square, and it is difficult to modify the size larger than this once.
This is for the following reasons.
すなわち,上述のスリット4の縮小率は1/100程度であ
り,フォトマスク14上での25μm平方はスリット面で2.
5mm平方に対応しており,均一な金属膜を析出させるに
は,この範囲内でのレーザ光の強度分布が均一でなけれ
ばならない。このためには,できるだけビームエキスパ
ンダ2の倍率を上げることが必要となるが,そうすると
パワー密度が低下するために良質の金属膜が得られない
という問題が生じる。もちろん,レーザ光源1から出射
されるレーザ光のパワーを上げることができれば,エキ
スパンダ2の倍率を上げることもできるが,現状ではレ
ーザ光のパワーも最大近くで使用しており,大幅な向上
は期待できない。That is, the reduction ratio of the slit 4 is about 1/100, and the 25 μm square on the photomask 14 is 2.
It corresponds to a 5 mm square, and in order to deposit a uniform metal film, the laser light intensity distribution within this range must be uniform. For this purpose, it is necessary to increase the magnification of the beam expander 2 as much as possible, but this causes a problem that a good quality metal film cannot be obtained because the power density decreases. Of course, if the power of the laser light emitted from the laser light source 1 can be increased, the magnification of the expander 2 can also be increased, but at the present time, the power of the laser light is used near the maximum, which is a significant improvement. I can't expect.
たとえば,50μm平方の修正を行なう場合は,25μm平方
に比して面積が4倍となり,従ってエキスパンダの倍率
も4倍に上げる必要がある。これに対応してパワー密度
を同じにするにはレーザパワーも4倍必要となる。しか
し,現状でこれは不可能である。従って今のところ,最
大修正サイズを大幅に大きくすることができない。For example, in the case of modifying the square of 50 μm, the area becomes 4 times as large as that of the square of 25 μm, so that it is necessary to increase the magnification of the expander to 4 times. Correspondingly, in order to make the power density the same, the laser power also needs to be four times. However, this is not possible at present. Therefore, at present, the maximum modification size cannot be increased significantly.
ところが,第7図(a)に示すようフォトマスク32には
時々25μm平方を超える白点欠陥31が発生したりする場
合があるが,この場合は第7図(b)に示すよう修正を
何回かに分けて施す必要がある。図は3回の場合を示し
33,34,35は1回目,2回目,3回目の析出膜を示している。
しかし,そうすると,第7図(c)に同図(b)のA−
A′断面図を示すように金属膜を重ねた部分で段差36が
生じ,表面検査機等の検査で欠陥として検出される場合
がある。また,小さなピンホールが25μm平方以上の範
囲で集中的に分布している場合,現状では数回に分けて
修正を施しているがら,これは修正工程も面倒であり,
効率が悪く,上述のように段差の問題点が生じる。However, as shown in FIG. 7 (a), the photomask 32 may sometimes have white spot defects 31 exceeding 25 μm square. In this case, the correction as shown in FIG. 7 (b) should be avoided. It is necessary to apply it in several steps. The figure shows the case of three times
33, 34, and 35 indicate the first, second, and third deposited films.
However, in doing so, FIG. 7 (c) shows A- in FIG. 7 (b).
As shown in the A'cross-sectional view, a step 36 is formed in the portion where the metal films are overlapped, and it may be detected as a defect by the inspection of a surface inspection machine or the like. Also, when small pinholes are concentratedly distributed in a range of 25 μm square or more, at present, the correction process is divided into several times, but this correction process is troublesome.
It is inefficient and causes the problem of steps as described above.
本発明は従来のもののこのような問題点を解決しようと
するもので,レーザ光のパワーを上げることを必要とせ
ずにフォトマスクの大面積の白点欠陥を修正することが
できるフォトマスク白点欠陥修正装置を提供するもので
ある。The present invention is intended to solve such a problem of the conventional one, and it is possible to correct a white spot defect of a photomask in a large area of a photomask without increasing the power of laser light. A defect repairing device is provided.
本発明によると,レーザ光を出射するレーザ光源と、該
出射されたレーザ光を受けレンズ機構を用いてこれを拡
大し、拡大された径のレーザ光を送出するレーザ光拡大
処理手段と、前記拡大された径のレーザ光を該径に基づ
き整形して開口サイズを設定するスリットと、該設定さ
れた開口サイズのレーザ光をフォトマスク表面に集光す
る手段と、該フォトマスクを観察する手段と、該フォト
マスクを載置して移動可能なXYステージと、該フォトマ
スク表面に修正物質を一定流量で供給する手段とを有
し、前記修正物質を前記レーザ光により分解して前記フ
ォトマスク上に金属を析出させ前記フォトマスクの白点
欠陥を修正するようにしたフォトマスク白点欠陥修正装
置において、前記レーザ光拡大処理手段が、拡大された
レーザ光を前記受けたレーザ光の光軸から偏心させて該
光軸の回りに回転させる走査手段を有し、回転する拡大
されたレーザ光で形成される包絡線で囲まれる更に拡大
された径のレーザ光を発して前記開口サイズの拡大を可
能とするレーザ光拡大処理手段であることを特徴とする
フォトマスク白点欠陥修正装置が得られる。According to the present invention, a laser light source that emits a laser beam, a laser beam enlargement processing unit that enlarges the emitted laser beam by using a lens mechanism and sends out a laser beam having an enlarged diameter, A slit for shaping a laser beam having an enlarged diameter based on the diameter to set an aperture size, a means for focusing the laser beam having the set aperture size on a photomask surface, and a means for observing the photomask An XY stage on which the photomask is placed and movable, and a means for supplying a correction substance to the photomask surface at a constant flow rate, and the photomask is obtained by decomposing the correction substance with the laser light. In a photomask white spot defect repairing device for depositing metal on the photomask to repair white spot defects, the laser beam expansion processing means receives the expanded laser beam. It has a scanning means that is decentered from the optical axis of the laser beam and rotates around the optical axis, and emits a laser beam of a further expanded diameter surrounded by an envelope formed by the rotating expanded laser beam. A photomask white spot defect repairing device is obtained, which is a laser beam enlargement processing unit capable of enlarging the opening size.
次に本発明を図面を参照して説明する。 Next, the present invention will be described with reference to the drawings.
第1図は本発明の一実施例のブロック構成図である。こ
の例では,凹レンズ21及び凸レンズ22から成るビームエ
キスパンダ2とスリット4の間にガラス板40を設置して
ある。このガラス板は第2図(a)(b)に示すよう
に,光軸に対する角度θを任意に変えられ,且つ,光軸
の回りに回転さすことができるようになっている。FIG. 1 is a block diagram of an embodiment of the present invention. In this example, a glass plate 40 is installed between the beam expander 2 including the concave lens 21 and the convex lens 22 and the slit 4. As shown in FIGS. 2 (a) and 2 (b), this glass plate can be arbitrarily changed in angle θ with respect to the optical axis and can be rotated around the optical axis.
レーザ光の偏芯量Dはガラス板の屈折率をn,板厚をdと
すると で与えられる。ガラス板が第2図(a)の位置にあると
きは,レーザ光は第2図(c)のように上にDだけ偏芯
し,同図(b)の位置にあるときは同図(d)のように
下にDだけ偏芯する。このようにして,ガラス板が光軸
の回りに1回転すると同図(e)に示すように,包絡線
43で示した範囲でレーザ光を走査することができ,レー
ザ光の径を大きくしたのと同じ効果を持たせることがで
きる。The eccentricity D of the laser light is given by assuming that the refractive index of the glass plate is n and the plate thickness is d. Given in. When the glass plate is at the position shown in FIG. 2 (a), the laser light is eccentric by D upward as shown in FIG. 2 (c), and when it is at the position shown in FIG. As in d), eccentric by D downward. In this way, when the glass plate makes one revolution around the optical axis, the envelope curve is
The laser beam can be scanned within the range indicated by 43, and the same effect as increasing the diameter of the laser beam can be provided.
従って,スリット4の開口サイズをその分大きくするこ
とができ,大面積の修正を行なうことができる。そし
て,偏芯量Dはガラス板の傾角θにより変えることがで
きるので,必要な修正サイズに応じてθを変えればよ
い。なお,修正サイズを特に大きくする必要のない時
は,θを90゜にすればよいことは明らかである。Therefore, the opening size of the slit 4 can be increased correspondingly, and a large area can be corrected. Since the amount of eccentricity D can be changed by the inclination angle θ of the glass plate, θ may be changed according to the required correction size. If it is not necessary to increase the correction size, it is clear that θ should be 90 °.
また,ガラス板の回転速度は金属膜の析出速度に応じて
最適に設定されなければならない。これは次のような理
由による。回転速度が余りに遅いと各々の瞬間における
析出膜が厚くなるため,膜の段差が顕著になるからであ
る。また,逆に早すぎる場合は,レーザ光による加熱効
果が少ないため膜の析出速度が遅くなったり,あるいは
全く析出しない可能性があるからである。さらに,ガラ
ス板の回転にはパルスモータ等によるステップ駆動では
なく,DCモータのような連続的な駆動の方が良い。これ
は,ステップ駆動の場合やはり,各々のステップ位置に
おける膜の段差が顕著になるからである。In addition, the rotation speed of the glass plate must be optimally set according to the deposition rate of the metal film. This is for the following reasons. This is because, if the rotation speed is too slow, the deposited film becomes thicker at each moment, and the steps of the film become noticeable. On the other hand, if it is too fast, the heating effect of the laser beam is small, so that the deposition rate of the film may be slow, or the deposition may not occur at all. Furthermore, it is better to use a continuous drive like a DC motor to rotate the glass plate instead of stepping with a pulse motor. This is because the step difference of the film at each step position becomes remarkable in the case of step driving.
本発明による第2の実施例を第3図に示す。これは,ビ
ームエキスパンダ2に偏芯及び回転機構を設け,レーザ
光を走査できるようにしたものである。第4図に示すよ
うに,エキスパンダの軸52を光軸53よりαだけ偏芯させ
て,軸の回りに回転できるようにしたものである。この
場合,レーザ光の偏芯量βは,ほぼαとエキスパンダ倍
率の積になると考えられるが,レンズの収差等もあるの
で,幾分その値より異なるものと思われる。この場合も
前記第1の実施例と同様に,適当な速度でエキスパンダ
を回転することにより,レーザ光を走査することがで
き,大面積の修正が可能となる。ただし,この方法で
は,軸の偏芯量αを余り大きくすると,レンズの収差に
よりレーザ光の分布が変化する可能性があるので,注意
する必要がある。以上述べた方法によれば,第5図
(a)及びそのβ−β′断面を示す(b)に示すように
大面積の白点欠陥に対しても,金属膜37を一様に析出さ
すことができ,段差のない修正を施すことができる。A second embodiment according to the present invention is shown in FIG. In this system, the beam expander 2 is provided with an eccentric and rotating mechanism so that the laser beam can be scanned. As shown in FIG. 4, the shaft 52 of the expander is eccentric from the optical axis 53 by α so that it can rotate around the shaft. In this case, the eccentricity amount β of the laser light is considered to be a product of approximately α and the expander magnification, but it is considered to be somewhat different from that value due to lens aberration and the like. Also in this case, as in the first embodiment, by rotating the expander at an appropriate speed, the laser light can be scanned and a large area can be corrected. However, in this method, if the eccentricity α of the axis is made too large, the distribution of the laser light may change due to the aberration of the lens, so care must be taken. According to the method described above, the metal film 37 is uniformly deposited even on a large area white spot defect as shown in FIG. It is possible to make a correction without steps.
以上説明したように本発明は、スリットに入射するレー
ザ光を比較的簡単な機構により走査するだけで,レーザ
光のパワーを上げることを必要とせずに,フォトマスク
の大面積の白点欠陥を容易に修正することができる効果
がある。As described above, according to the present invention, by scanning the laser light incident on the slit with a relatively simple mechanism, it is possible to remove the white spot defect of a large area of the photomask without the need to increase the power of the laser light. There is an effect that can be easily corrected.
第1図は本発明の第1の実施例を示すフォトマスク白点
欠陥修正装置のブロック図,第2図はこの実施例のビー
ム走査の機構を示す図,第3図は本発明の第2の実施例
を示すブロック構成図,第4図はこの実施例のビーム走
査の機構を示す図,第5図は第4図の装置による大面積
の白点欠陥の修正例を示す,第6図は従来のフォトマス
ク白点欠陥修正装置を示すブロック構成図,第7図は従
来の大面積修正の例を示す図である。 記号の説明:1……レーザ光源,2……ビームエキスパン
ダ,3,6……ダイクロイックミラー,4……スリット,5……
スリット照明光源,7……ハーフミラー,8……反射照明光
源,9……接眼光学系,10……対物レンズ,11……ウイン
ド,12……押え板,13……Oリング,14……フォトマスク,
15……XYステージ,16……修正物質供給装置,17……トラ
ップ,18……排気装置,19……チェンバ,20……透明照明
光源,21……凹レンズ,22……凸レンズ,31……白点欠陥,
32……フォトマスク,33,34,35……析出膜,40……ガラス
板,50……偏芯したレーザ光,51……αかゼロの時のレー
ザ光,52……エキスパンダ軸,53……レーザ光軸。FIG. 1 is a block diagram of a photomask white spot defect repairing apparatus showing a first embodiment of the present invention, FIG. 2 is a view showing a beam scanning mechanism of this embodiment, and FIG. 3 is a second view of the present invention. FIG. 4 is a block diagram showing the embodiment of the present invention, FIG. 4 is a view showing the beam scanning mechanism of this embodiment, and FIG. 5 is an example of correcting a large area white spot defect by the apparatus of FIG. 4, FIG. Is a block diagram showing a conventional photomask white spot defect repairing apparatus, and FIG. 7 is a view showing an example of conventional large area repairing. Explanation of symbols: 1 …… Laser light source, 2 …… Beam expander, 3,6 …… Dichroic mirror, 4 …… Slit, 5 ……
Slit illumination light source, 7 …… Half mirror, 8 …… Reflection illumination light source, 9 …… Eyepiece optical system, 10 …… Objective lens, 11 …… Window, 12 …… Holding plate, 13 …… O-ring, 14 …… Photo Mask,
15 …… XY stage, 16 …… Correcting substance supply device, 17 …… Trap, 18 …… Exhaust device, 19 …… Chamber, 20 …… Transparent illumination light source, 21 …… Concave lens, 22 …… Convex lens, 31 …… White Spot Defect,
32 …… photomask, 33,34,35 …… deposited film, 40 …… glass plate, 50 …… eccentric laser light, 51 …… laser light when α or zero, 52 …… expander axis, 53 …… Laser optical axis.
Claims (3)
されたレーザ光を受けレンズ機構を用いてこれを拡大
し、拡大された径のレーザ光を送出するレーザ光拡大処
理手段と、前記拡大された径のレーザ光を該径に基づき
整形して開口サイズを設定するスリットと、該設定され
た開口サイズのレーザ光をフォトマスク表面に集光する
手段と、該フォトマスクを観察する手段と、該フォトマ
スクを載置して移動可能なXYステージと、該フォトマス
ク表面に修正物質を一定流量で供給する手段とを有し、
前記修正物質を前記レーザ光により分解して前記フォト
マスク上に金属を析出させ前記フォトマスクの白点欠陥
を修正するようにしたフォトマスク白点欠陥修正装置に
おいて、 前記レーザ光拡大処理手段が、拡大されたレーザ光を前
記受けたレーザ光の光軸から偏心させて該光軸の回りに
回転させる走査手段を有し、回転する拡大されたレーザ
光で形成される包絡線で囲まれる更に拡大された径のレ
ーザ光を発して前記開口サイズの拡大を可能とするレー
ザ光拡大処理手段であることを特徴とするフォトマスク
白点欠陥修正装置。1. A laser light source that emits a laser beam, a laser beam enlargement processing unit that enlarges the emitted laser beam by using a lens mechanism and sends out a laser beam having an enlarged diameter, A slit for shaping a laser beam having an enlarged diameter based on the diameter to set an aperture size, a means for focusing the laser beam having the set aperture size on a photomask surface, and a means for observing the photomask An XY stage on which the photomask is placed and movable, and means for supplying a correction substance to the surface of the photomask at a constant flow rate,
In a photomask white spot defect repairing device for decomposing the repair substance by the laser light to deposit a metal on the photomask and repairing a white spot defect of the photomask, the laser light enlargement processing means: Enlarging the expanded laser beam with an envelope formed by the rotating expanded laser beam, further comprising scanning means for eccentricizing the expanded laser beam from the optical axis of the received laser beam and rotating it about the optical axis. A photomask white-spot defect correction device, which is a laser beam enlargement processing unit that emits a laser beam of a specified diameter to enlarge the opening size.
拡大されたレーザ光の中に、該レーザ光の光軸に対する
角度を任意に変えられるガラス板を、該光軸の回りに回
転可能に設けた走査手段であることを特徴とする特許請
求の範囲第1項記載のフォトマスク白点欠陥修正装置。2. The scanning means is capable of rotating, around the optical axis, a glass plate in which the angle of the laser light with respect to the optical axis can be arbitrarily changed in the laser light expanded using the lens mechanism. The photomask white spot defect correction device according to claim 1, wherein the photomask white spot defect correction device is a scanning means provided in the.
を発するレンズ機構を、前記受けたレーザ光の光軸から
偏芯させて該光軸の回りに回転可能に設けた走査手段で
あることを特徴とする特許請求の範囲第1項記載のフォ
トマスク白点欠陥修正装置。3. The scanning means, wherein the scanning means is provided with a lens mechanism for emitting the enlarged laser light, which is eccentric to the optical axis of the received laser light and is rotatable about the optical axis. The photomask white spot defect repairing apparatus according to claim 1, wherein
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26281687A JPH079536B2 (en) | 1987-10-20 | 1987-10-20 | Photomask white spot defect repair device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26281687A JPH079536B2 (en) | 1987-10-20 | 1987-10-20 | Photomask white spot defect repair device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01106062A JPH01106062A (en) | 1989-04-24 |
| JPH079536B2 true JPH079536B2 (en) | 1995-02-01 |
Family
ID=17381011
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP26281687A Expired - Lifetime JPH079536B2 (en) | 1987-10-20 | 1987-10-20 | Photomask white spot defect repair device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH079536B2 (en) |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57118246A (en) * | 1981-01-14 | 1982-07-23 | Hitachi Ltd | Method and device for correcting white spot defect of photomask |
-
1987
- 1987-10-20 JP JP26281687A patent/JPH079536B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH01106062A (en) | 1989-04-24 |
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