JPH0797652B2 - Light receiving element - Google Patents
Light receiving elementInfo
- Publication number
- JPH0797652B2 JPH0797652B2 JP2328328A JP32832890A JPH0797652B2 JP H0797652 B2 JPH0797652 B2 JP H0797652B2 JP 2328328 A JP2328328 A JP 2328328A JP 32832890 A JP32832890 A JP 32832890A JP H0797652 B2 JPH0797652 B2 JP H0797652B2
- Authority
- JP
- Japan
- Prior art keywords
- light
- photodiode
- receiving element
- sealing member
- antireflection film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000007789 sealing Methods 0.000 claims description 23
- 239000012780 transparent material Substances 0.000 claims description 2
- 239000000853 adhesive Substances 0.000 description 9
- 230000001070 adhesive effect Effects 0.000 description 9
- 239000003822 epoxy resin Substances 0.000 description 9
- 229920000647 polyepoxide Polymers 0.000 description 9
- 239000011521 glass Substances 0.000 description 8
- 229920002050 silicone resin Polymers 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- 239000004925 Acrylic resin Substances 0.000 description 3
- 229920000178 Acrylic resin Polymers 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- 239000005388 borosilicate glass Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000007257 malfunction Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229920003217 poly(methylsilsesquioxane) Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
Landscapes
- Photovoltaic Devices (AREA)
- Light Receiving Elements (AREA)
- Solid State Image Pick-Up Elements (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明はホトダイオードなどの受光素子に関する。The present invention relates to a light receiving element such as a photodiode.
ホトダイオードの受光感度を向上させるためには、パッ
ケージに入射された光を反射、減衰等させることなく、
確実にダイオードチップに入射させることが必要であ
る。また、レーザダイオードなどと組み合せて用いる場
合には、ホトダイオードでの反射があるとレーザダイオ
ードへの戻り光となり、誤動作を招いてしまう。In order to improve the light receiving sensitivity of the photodiode, the light incident on the package is not reflected or attenuated,
It is necessary to ensure that the light is incident on the diode chip. Further, when used in combination with a laser diode or the like, reflection at the photodiode causes light to return to the laser diode, resulting in malfunction.
イメージセンサなどの受光あるいは撮像デバイスにおい
て、反射防止のための工夫を施した技術として、例えば
特開平１−262661号および特開平２−5687号が知られて
いる。ところが、これらはいずれも広帯域の反射防止を
狙ったものであり、また広帯域の受光を必要とする撮像
デバイス特有の問題を解決するための技術である。As a technique for preventing reflection in a light receiving or image pickup device such as an image sensor, for example, JP-A-1-262661 and JP-A-2-5687 are known. However, all of these are aimed at preventing reflection in a wide band, and are techniques for solving a problem peculiar to an image pickup device which requires light reception in a wide band.
そこで本発明は、特定の波長の光を、極めて高感度に受
光することが可能な受光素子を提供することを目的とす
る。Therefore, an object of the present invention is to provide a light receiving element capable of receiving light of a specific wavelength with extremely high sensitivity.
本発明は、受光素子チップを透過性材料からなる封止部
材で封止した受光素子において、上記受光素子チップの
受光面側の封止部材の表面には透明板が接着され、当該
透明板の外面には特定波長の光に対する反射防止膜が形
成され、封止部材と前記透明板の屈折率は略同等とされ
ていることを特徴とする。The present invention, in a light receiving element in which a light receiving element chip is sealed with a sealing member made of a transparent material, a transparent plate is adhered to the surface of the sealing member on the light receiving surface side of the light receiving element chip, An antireflection film for light of a specific wavelength is formed on the outer surface, and the sealing member and the transparent plate have substantially the same refractive index.
本発明によれば、封止部材の表面には透明板が接着され
ているので、ここに特定波長の反射防止膜を形成して
も、高い信頼性を維持し得る。また、反射防止膜から受
光素子チップに至る経路で、光学的屈折率がほとんど変
わらないようにしておくので、より優れた反射防止をな
し得る。According to the present invention, since the transparent plate is adhered to the surface of the sealing member, high reliability can be maintained even if an antireflection film having a specific wavelength is formed there. Further, since the optical refractive index is kept almost unchanged in the path from the antireflection film to the light receiving element chip, more excellent antireflection can be achieved.
以下、添付図面を参照して本発明の実施例を説明する。 Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings.
第１図は実施例に係る４種類のホトダイオードの断面構
造を示している。同図（ａ）はモールドタイプを示し、
リードフレーム１にマウントされたホトダイオードチッ
プ２が、エポキシ樹脂をモールド成形した封止部材３に
より封止されている。そして、封止部材３の受光面側に
は、接着剤４によってガラス、アクリル樹脂などの透明
板５が接着され、透明板５の上面には反射防止膜６が形
成されている。FIG. 1 shows the sectional structures of four types of photodiodes according to the embodiment. The figure (a) shows the mold type,
The photodiode chip 2 mounted on the lead frame 1 is sealed by a sealing member 3 formed by molding epoxy resin. A transparent plate 5 made of glass, acrylic resin or the like is adhered to the light-receiving surface side of the sealing member 3 with an adhesive 4, and an antireflection film 6 is formed on the upper surface of the transparent plate 5.
同図（ｂ）はセラミックスパッケージに封止したタイプ
を示し、リード端子７を有するセラミックスパッケージ
８のキャビティにはホトダイオードチップ２がマウント
され、ここにエポキシ樹脂などが充填されて封止部材３
が形成されている。そして、封止部材３の上面にはエポ
キシ樹脂やシリコーン樹脂などの接着剤４によりガラ
ス、アクリル樹脂などの透明板５が接着され、透明板５
の上面には反射防止膜６が形成されている。FIG. 2B shows a type sealed in a ceramics package, in which the photodiode chip 2 is mounted in the cavity of the ceramics package 8 having the lead terminals 7, and epoxy resin or the like is filled therein to seal the sealing member 3.
Are formed. Then, a transparent plate 5 such as glass or acrylic resin is adhered to the upper surface of the sealing member 3 with an adhesive 4 such as an epoxy resin or a silicone resin.
An antireflection film 6 is formed on the upper surface of the.
同図（ｃ）はボード上で封止したタイプを示し、ガラス
エポキシなどのPCB、あるいはポリイミド等のFPCからな
るボード９には、枠体10によりマウント領域が形成され
ている。そして、ここにホトダイオードチップ２がマウ
ントされ、エポキシ樹脂などが充填されて封止部材３が
形成されている。さらに、封止部材３の上面には接着剤
４によって透明板５が気密に接着され、透明板５の上面
には反射防止膜６が形成されている。FIG. 1C shows a type sealed on a board, and a mount area is formed by a frame body 10 on a board 9 made of PCB such as glass epoxy or FPC such as polyimide. Then, the photodiode chip 2 is mounted here and filled with epoxy resin or the like to form the sealing member 3. Further, a transparent plate 5 is airtightly adhered to the upper surface of the sealing member 3 with an adhesive 4, and an antireflection film 6 is formed on the upper surface of the transparent plate 5.
同図（ｄ）はメタルパッケージに封止したタイプを示
し、リード端子７を有するメタルパッケージ11のキャビ
ティには、ホトダイオードチップ２がマウントされてい
る。そして、シリコーン樹脂などが充填されて封止部材
３が形成され、この上面にシリコーン樹脂などの接着剤
４によって透明板５が接着されている。この透明板５の
上面には、特定波長の光に対する反射防止膜６が形成さ
れ、実施例の受光素子が構成されている。FIG. 3D shows a type sealed in a metal package, and the photodiode chip 2 is mounted in the cavity of the metal package 11 having the lead terminal 7. Then, a sealing member 3 is formed by filling with a silicone resin or the like, and a transparent plate 5 is adhered to the upper surface of the sealing member 3 with an adhesive 4 such as a silicone resin. An antireflection film 6 for light of a specific wavelength is formed on the upper surface of the transparent plate 5 to form the light receiving element of the embodiment.
上記実施例の受光素子において、封止部材３は例えばエ
ポキシ樹脂やシリコーン樹脂で構成されるが、これらの
光学的な屈折率は、 エポキシ樹脂 …ｎ＝1.53 シリコーン樹脂…ｎ＝1.4〜1.55 である。そこで、まず透明板５としては、これと屈折率
が整合し、しかも反射防止膜６の形成が可能で信頼性の
高いものを選ぶ。このようなものとしては、例えばアク
リル樹脂があり、屈折率はｎ＝1.52である。また、硼珪
酸ガラス（屈折率はｎ＝1.51〜1.54）などを用いること
もできる。そして、上記の封止部材３と透明板５は、略
同等の屈折率を有する接着剤４で気密に接着する。In the light receiving element of the above embodiment, the sealing member 3 is made of, for example, an epoxy resin or a silicone resin, and the optical refractive index of these is epoxy resin ... n = 1.53 silicone resin ... n = 1.4 to 1.55. . Therefore, first, as the transparent plate 5, a transparent plate having a high refractive index and a reliable antireflection film 6 can be formed. An example of such a material is acrylic resin, and the refractive index is n = 1.52. Borosilicate glass (refractive index n = 1.51 to 1.54) or the like can also be used. Then, the sealing member 3 and the transparent plate 5 are hermetically adhered to each other with an adhesive 4 having a substantially equal refractive index.
反射防止膜６としては、多層反射防止膜を用いる。膜厚
（nd）は例えばλ/4とし、２層コートの場合には、 第２層…MgF2（ｎ＝1.38） 第１層…Al2O3（ｎ＝1.63） 透明板…ガラス（ｎ＝1.52） とし、４層コートの場合には、膜厚は特開昭63−165806
号に開示の多変数関数にもとづいて定め、 第４層…MgF2（ｎ＝1.38） 第３層＝TiO2（ｎ＝2.28） 第２層…SiO2（ｎ＝1.46） 第１層…Al2O3（ｎ＝1.63） 透明板…ガラス（ｎ＝1.52） とすればよい。As the antireflection film 6, a multilayer antireflection film is used. The film thickness (nd) is, for example, λ / 4, and in the case of a two-layer coating, the second layer ... MgF 2 (n = 1.38) the first layer ... Al 2 O 3 (n = 1.63) the transparent plate ... the glass (n = 1.52), and in the case of a four-layer coat, the film thickness is set to JP-A-63-165806.
4th layer ... MgF 2 (n = 1.38) 3rd layer = TiO 2 (n = 2.28) 2nd layer ... SiO 2 (n = 1.46) 1st layer ... Al 2 O 3 (n = 1.63) Transparent plate ... Glass (n = 1.52) may be used.
さらに、反射防止効果を確実なものとするためには、ホ
トダイオードチップ２の表面にも反射防止膜を形成する
ことが望ましい。すなわち、ホトダイオードチップ２が
シリコン（Si）からなるときは、Si3N4（ｎ＝2.0）やCe
O2（ｎ＝2.3）でホトダイオードチップ２の受光面をコ
ーティングすればよい。Further, in order to secure the antireflection effect, it is desirable to form an antireflection film also on the surface of the photodiode chip 2. That is, when the photodiode chip 2 is made of silicon (Si), Si 3 N 4 (n = 2.0) or Ce
The light receiving surface of the photodiode chip 2 may be coated with O 2 (n = 2.3).
本発明者は、第１図（ａ）に示す構造のホトダイオード
と、従来タイプのホトダイオード（反射防止膜６付きの
透明板５を設けないホトダイオード）を対比した。すな
わち、本発明のホトダイオードとして、ホトダイオード
チップ２はSiホトダイオードとし、表面には波長780nm
で反射率が極小となる反射防止膜をコーティングした。
封止部材３にはｎ＝1.52のエポキシ樹脂を用い、透明板
５には片面に波長780nmで反射率が極小となる反射防止
膜を付けた硼珪酸ガラス板を用い、エポキシ樹脂系の接
着剤４で封止部材３の上面に接着した。従来タイプのホ
トダイオードとしては、上記の接着剤４、透明板５およ
び反射防止膜６を有しないものを用いた。その結果、波
長780nmでの量子効率は、従来タイプでは94％であった
のに対し、本発明のタイプでは98％となった。その結果
を第２図に示す。The present inventor has compared the photodiode having the structure shown in FIG. 1A with a conventional photodiode (a photodiode in which the transparent plate 5 with the antireflection film 6 is not provided). That is, as the photodiode of the present invention, the photodiode chip 2 is a Si photodiode, and the surface has a wavelength of 780 nm.
Coated with an antireflection film that minimizes the reflectance.
The sealing member 3 is made of an epoxy resin of n = 1.52, the transparent plate 5 is made of a borosilicate glass plate having an antireflection film having a minimum reflectance at a wavelength of 780 nm on one side, and an epoxy resin adhesive. It adhered to the upper surface of the sealing member 3 by 4. As a conventional type photodiode, one not having the adhesive 4, the transparent plate 5, and the antireflection film 6 was used. As a result, the quantum efficiency at a wavelength of 780 nm was 98% in the conventional type, whereas it was 94% in the conventional type. The results are shown in FIG.
このように、反射防止膜付きガラス板を付けたホトダイ
オードと、付けないホトダイオードとのパッケージ表面
の反射率は、反射防止膜付きガラスを付けた製品では、
屈折率がガラス、接着剤、封止樹脂の間で共に同一であ
るため、反射防止膜表面の反射のみに支配される。この
ため、λ＝780nmに限定して考えれば、反射率がほぼ０
％に近い状態を確保できる。In this way, the reflectance of the package surface between the photodiode with the glass plate with antireflection film attached and the photodiode without it is as follows:
Since the glass, the adhesive, and the sealing resin have the same refractive index, they are governed only by the reflection on the surface of the antireflection film. Therefore, if we consider only λ = 780 nm, the reflectance is almost 0.
A state close to% can be secured.
一方、従来のホトダイオードの場合には、エポキシ樹
脂、シリコーン樹脂の屈折率は、1.45〜1.55程度あり、
これと空気との境界部での反射率は3.4％〜4.7％とな
る。On the other hand, in the case of the conventional photodiode, the refractive index of epoxy resin and silicone resin is about 1.45 to 1.55,
The reflectance at the boundary between this and air is 3.4% to 4.7%.
このように、本発明の方法を用いれば、入射光の損失を
反射光のみと考えた場合には、量子効率を100％に近い
状態にする事が可能である。また、レーザダイオードの
入射光を受けるようにホトダイオードが用いられる際
の、戻り光による誤動作を防止する効果もある。ガラス
基板に反射防止膜を形成する技術は、すでに完成された
技術である。このため、あらゆる要求に適合した反射防
止膜が、高い信頼性を確保した状態で入手する事が可能
である。そして、これを従来の樹脂封止のホトダイオー
ドに接着する事で簡単に作成できる。また、従来量子効
率を高める事が難しいとされていた樹脂封止ホトダイオ
ードに於て、パッケージ表面での反射を抑えることで、
100％に近い物を低価格で作成する事が可能となった。Thus, when the method of the present invention is used, the quantum efficiency can be brought to a state close to 100% when the loss of incident light is considered to be only reflected light. Further, there is also an effect of preventing malfunction due to returning light when the photodiode is used to receive the incident light of the laser diode. The technique for forming the antireflection film on the glass substrate is a technique that has already been completed. Therefore, it is possible to obtain an antireflection film that meets all requirements with high reliability. Then, this can be easily made by adhering it to a conventional resin-sealed photodiode. In addition, in the resin-sealed photodiode, which was conventionally difficult to increase quantum efficiency, by suppressing the reflection on the package surface,
It has become possible to create things close to 100% at a low price.
〔発明の効果〕 以上、詳細に説明した通り、本発明の受光素子では、封
止部材の表面には透明板が接着されているので、ここに
特定波長の反射防止膜を形成しても、高い信頼性を維持
し得る。また、反射防止膜から受光素子チップに至る経
路で、光学的屈折率が変わらないように材料を選択して
おくことで、より優れた反射防止をなし得る。このた
め、特定の波長の光を、極めて高感度に受光することが
可能な受光素子を提供することができる。As described above in detail, in the light receiving element of the present invention, since the transparent plate is adhered to the surface of the sealing member, even if an antireflection film having a specific wavelength is formed here, High reliability can be maintained. Further, by selecting the material so that the optical refractive index does not change in the path from the antireflection film to the light receiving element chip, more excellent antireflection can be achieved. Therefore, it is possible to provide a light receiving element capable of receiving light of a specific wavelength with extremely high sensitivity.
第１図は本発明の実施例に係るホトダイオードの断面
図、第２図は本発明によるホトダイオードと従来タイプ
のホトダイオードを比較するグラフである。 １……リードフレーム、２……ホトダイオードチップ、
３……封止部材、４……接着剤、５……透明板、６……
反射防止膜、７……リード端子、８……セラミックスパ
ッケージ、９……ボード、10……枠体、11……メタルパ
ッケージ。FIG. 1 is a sectional view of a photodiode according to an embodiment of the present invention, and FIG. 2 is a graph comparing a photodiode according to the present invention and a conventional type photodiode. 1 ... Lead frame, 2 ... Photodiode chip,
3 ... Sealing member, 4 ... Adhesive, 5 ... Transparent plate, 6 ...
Antireflection film, 7 ... Lead terminal, 8 ... Ceramics package, 9 ... Board, 10 ... Frame, 11 ... Metal package.
Claims (1)
部材で封止した受光素子において、 前記受光素子チップの受光面側の前記封止部材の表面に
は透明板が接着され、当該透明板の外面には特定波長の
光に対する反射防止膜が形成され、前記封止部材と前記
透明板の屈折率が略同等であることを特徴とする受光素
子。1. A light-receiving element obtained by sealing a light-receiving element chip with a sealing member made of a transparent material, wherein a transparent plate is bonded to the surface of the sealing member on the light-receiving surface side of the light-receiving element chip, and the transparent member is transparent. A light receiving element, wherein an antireflection film for light having a specific wavelength is formed on an outer surface of the plate, and the sealing member and the transparent plate have substantially the same refractive index.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2328328A JPH0797652B2 (en) | 1990-11-28 | 1990-11-28 | Light receiving element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2328328A JPH0797652B2 (en) | 1990-11-28 | 1990-11-28 | Light receiving element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04196588A JPH04196588A (en) | 1992-07-16 |
| JPH0797652B2 true JPH0797652B2 (en) | 1995-10-18 |
Family
ID=18209006
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2328328A Expired - Lifetime JPH0797652B2 (en) | 1990-11-28 | 1990-11-28 | Light receiving element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0797652B2 (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3173586B2 (en) * | 1998-03-26 | 2001-06-04 | 日本電気株式会社 | All-mold solid-state imaging device and method of manufacturing the same |
| WO2003098702A1 (en) * | 2002-05-15 | 2003-11-27 | Matsushita Electric Industrial Co., Ltd. | Optical detector, optical head device, optical information processing device, and optical information processing method |
| JP2007311454A (en) * | 2006-05-17 | 2007-11-29 | Sony Corp | Solid-state imaging device |
| KR20230129546A (en) * | 2021-01-19 | 2023-09-08 | 스월 비전 시스템즈 인크. | Colloidal quantum dot photodetectors |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61119361U (en) * | 1985-01-11 | 1986-07-28 | ||
| JPS63180948U (en) * | 1987-05-15 | 1988-11-22 |
-
1990
- 1990-11-28 JP JP2328328A patent/JPH0797652B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH04196588A (en) | 1992-07-16 |
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