JPH0799578B2 - Method of manufacturing magnetic recording medium - Google Patents
Method of manufacturing magnetic recording mediumInfo
- Publication number
- JPH0799578B2 JPH0799578B2 JP26700086A JP26700086A JPH0799578B2 JP H0799578 B2 JPH0799578 B2 JP H0799578B2 JP 26700086 A JP26700086 A JP 26700086A JP 26700086 A JP26700086 A JP 26700086A JP H0799578 B2 JPH0799578 B2 JP H0799578B2
- Authority
- JP
- Japan
- Prior art keywords
- magnetic recording
- recording medium
- film
- manufacturing magnetic
- hydrogen
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000005291 magnetic effect Effects 0.000 title claims description 20
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 8
- 239000010409 thin film Substances 0.000 claims description 8
- 229920006254 polymer film Polymers 0.000 claims description 7
- 229910052739 hydrogen Inorganic materials 0.000 claims description 6
- 239000001257 hydrogen Substances 0.000 claims description 6
- 230000005294 ferromagnetic effect Effects 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 239000010408 film Substances 0.000 description 15
- 230000005415 magnetization Effects 0.000 description 10
- 238000000034 method Methods 0.000 description 8
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 description 6
- 239000010410 layer Substances 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000005566 electron beam evaporation Methods 0.000 description 4
- -1 polyethylene terephthalate Polymers 0.000 description 3
- 238000005299 abrasion Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 208000028659 discharge Diseases 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000001965 increasing effect Effects 0.000 description 2
- 238000010884 ion-beam technique Methods 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- 229910020630 Co Ni Inorganic materials 0.000 description 1
- 229910020647 Co-O Inorganic materials 0.000 description 1
- 229910002440 Co–Ni Inorganic materials 0.000 description 1
- 229910020704 Co—O Inorganic materials 0.000 description 1
- 229910018553 Ni—O Inorganic materials 0.000 description 1
- 239000004962 Polyamide-imide Substances 0.000 description 1
- 239000004695 Polyether sulfone Substances 0.000 description 1
- 239000004734 Polyphenylene sulfide Substances 0.000 description 1
- 229910052777 Praseodymium Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- AJCDFVKYMIUXCR-UHFFFAOYSA-N oxobarium;oxo(oxoferriooxy)iron Chemical compound [Ba]=O.O=[Fe]O[Fe]=O.O=[Fe]O[Fe]=O.O=[Fe]O[Fe]=O.O=[Fe]O[Fe]=O.O=[Fe]O[Fe]=O.O=[Fe]O[Fe]=O AJCDFVKYMIUXCR-UHFFFAOYSA-N 0.000 description 1
- SNGREZUHAYWORS-UHFFFAOYSA-N perfluorooctanoic acid Chemical compound OC(=O)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F SNGREZUHAYWORS-UHFFFAOYSA-N 0.000 description 1
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 description 1
- 229920002492 poly(sulfone) Polymers 0.000 description 1
- 229920002312 polyamide-imide Polymers 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920006393 polyether sulfone Polymers 0.000 description 1
- 239000011112 polyethylene naphthalate Substances 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 229920000069 polyphenylene sulfide Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
- 229910000859 α-Fe Inorganic materials 0.000 description 1
Landscapes
- Magnetic Record Carriers (AREA)
- Manufacturing Of Magnetic Record Carriers (AREA)
Description
【発明の詳細な説明】 産業上の利用分野 本発明は高密度磁気記録に適する磁気記録媒体の製造方
法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a magnetic recording medium suitable for high density magnetic recording.
従来の技術 記録の高密度化を目的として、磁気記録媒体の面内磁化
の利用でなく、垂直方向の磁化を用いる垂直磁気記録方
式が開発されている。この記録方式には、基板に垂直方
向に磁化できる媒体が必要で、塗布型ではバリウムフェ
ライト粉を用いたもの〔例えば東芝レビュー,40巻13号,
1104〜1106(1985)参照〕,薄膜型ではCo−Crスパッタ
膜が代表的である〔例えば、IEEE トランザクション
オン マグネティクス(Transactions on Magnetics)v
ol.MAG−15,1456(1979)参照〕。2. Description of the Related Art Perpendicular magnetic recording methods have been developed that use perpendicular magnetization instead of in-plane magnetization of magnetic recording media for the purpose of increasing the recording density. This recording method requires a medium that can be magnetized in the direction perpendicular to the substrate, and the coating type uses barium ferrite powder [eg Toshiba Review, Vol. 40, No. 13,
1104 to 1106 (1985)], Co-Cr sputtered film is a typical thin film type [eg, IEEE transaction
Transactions on Magnetics v
ol.MAG-15, 1456 (1979)].
薄膜型は高密度化に適するものの、現実には摩耗や、す
り傷の問題が深刻で、保護膜の開発が盛んである。しか
しながら保護膜は厚くすると、せっかくの高密度特性が
失われるため実用に近い系を見出すに至っていない。一
方、強磁性薄膜自身の耐久性の良い、酸化物,窒化物で
垂直磁化膜を構成する検討が行われ、磁気特性からみる
と、垂直磁化膜となっていることが確認されている〔例
えばジャーナル オブ アプライド フィジックス(Jo
urnal of Applied Physics)vol.57,No.1,4034〜4036
(1985)参照〕。Although the thin film type is suitable for high density, in reality, the problems of abrasion and abrasion are serious, and the development of protective film is active. However, if the protective film is made thick, the high-density characteristics are lost, and a practical system has not been found yet. On the other hand, studies have been conducted to form a perpendicular magnetization film from an oxide or nitride, which has good durability of the ferromagnetic thin film itself, and it has been confirmed from the magnetic characteristics that it is a perpendicular magnetization film [eg, Journal of Applied Physics (Jo
urnal of Applied Physics) vol.57, No.1,4034-4036
(1985)].
Co酸化物系の垂直磁化膜の形成は、電子ビーム蒸着法,
スパッタリング法で行えるが、電子ビーム蒸着法では、
電磁変換特性が不十分で、スパッタリング法が期待され
ている。The formation of the Co oxide perpendicular magnetization film is performed by electron beam evaporation method,
It can be done by sputtering method, but by electron beam evaporation method,
Electromagnetic conversion characteristics are insufficient, and a sputtering method is expected.
発明が解決しようとする問題点 しかしながらCo−O,Co−Ni−O系,Co−Cr系のいずれに
しても、又製法の基本がスパッタリング法であっても電
子ビーム蒸着法であっても、磁気記録層として必要な厚
さ以上に(特に高分子フィルム上に直接形成する場合)
薄膜を形成することで特性を得ているのが実状であり、
このことから成膜速度は実質的な低下をきたしているこ
とになり改善が望まれていた。本発明は上記した事情に
鑑みなされたもので、磁気記録層として必要な厚さだけ
で望む特性をだせるようにした磁気記録媒体の製造方法
を提供するものである。Problems to be Solved by the Invention However, whether Co-O, Co-Ni-O system, Co-Cr system, or the basic manufacturing method is a sputtering method or an electron beam evaporation method, More than the thickness required for the magnetic recording layer (especially when directly formed on the polymer film)
The fact is that the characteristics are obtained by forming a thin film.
From this, the film formation rate has been substantially reduced, and improvement has been desired. The present invention has been made in view of the above circumstances, and provides a method of manufacturing a magnetic recording medium capable of producing desired characteristics only with a thickness required for a magnetic recording layer.
問題点を解決するための手段 上記した問題点を解決するため本発明の磁気記録媒体の
製造方法は、移動する高分子フィルム表層部に過剰な水
素含有層を形成した後、強磁性金属薄膜を形成するよう
にしたものである。Means for Solving the Problems In order to solve the above-mentioned problems, the method for producing a magnetic recording medium of the present invention comprises: forming an excessive hydrogen-containing layer on the surface layer part of a moving polymer film; It is designed to be formed.
作用 本発明の磁気記録媒体の製造方法は上記した構成によ
り、強磁性金属薄膜形成の初期に高分子フィルムからの
水素ガスが作用するため、垂直磁化膜の垂直配向性,面
内磁化膜の一軸異方性が著しく改善されるため、従来の
ように初期の薄膜成長部にみられた、配向の乱れた層が
なくなるため、所望の厚みだけ、強磁性金属薄膜を形成
すればよく、性能の改善された磁気記録媒体の高速作製
が可能となる。又結晶も水素ガスの作用で、ち密にな
り、耐久性も改善されることになる。Action According to the method of manufacturing the magnetic recording medium of the present invention, since the hydrogen gas from the polymer film acts in the initial stage of the formation of the ferromagnetic metal thin film, the perpendicular orientation of the perpendicular magnetization film and the uniaxial magnetization film uniaxial Since the anisotropy is remarkably improved, the layer with disordered orientation found in the initial thin film growth portion as in the past is eliminated, so it is sufficient to form a ferromagnetic metal thin film with a desired thickness. High-speed production of an improved magnetic recording medium becomes possible. Also, the crystals become dense due to the action of hydrogen gas, and the durability is also improved.
実 施 例 以下図面を参照しながら本発明の実施例について説明す
る。図は本発明の実施のために用いたスパッタリング装
置の要部構成図である。図で1は、ポリエチレンテレフ
タレート,ポリサルフォン,ポリエーテルサルフォン,
ポリフェニレンサルファイド,ポリアミドイミド,ポリ
カーボネート,ポリエチレンナフタレート等の高分子フ
ィルム、2は円筒キャンで、一定の表面温度に保てるよ
う構成され直径30cmから1m程度のものが多く用いられ
る。3は送り出し軸、4は巻取り軸、5はCo,Co−Cr,Co
−Cr−Nb,Co−Cr−Pr,Co−Ta,Co−Mo,Co−Ni等のターゲ
ットで6はマグネトロン放去を誘起するための磁界発生
器で、ターゲットにギャップを設けるなどは必要に応じ
て行えばよい。7は高周波電源、8は真空容器、9はガ
ス導入ポート、10は可変リーク弁、11は真空排気孔で真
空ポンプPへ連結される。12は高圧導入端子である。13
はマスクで14は水素イオン発生器、15は水素イオンビー
ム、16はイオン系専用排気系、17は水素イオン照射管で
ある。高分子フィルム表層部に水素を過剰に含有する層
を形成するのは、水素イオン照射するか、中性水素ビー
ムを照射するかで、水素のグロー又は水素ガスを含むグ
ロー放電処理では不十分である。EXAMPLES Examples of the present invention will be described below with reference to the drawings. The figure is a schematic diagram of a main part of a sputtering apparatus used for carrying out the present invention. In the figure, 1 is polyethylene terephthalate, polysulfone, polyether sulfone,
Polymer films of polyphenylene sulfide, polyamide imide, polycarbonate, polyethylene naphthalate, etc., 2 are cylindrical cans, which are constructed so as to maintain a constant surface temperature and whose diameter is 30 cm to 1 m are often used. 3 is a feeding shaft, 4 is a winding shaft, 5 is Co, Co-Cr, Co
Targets such as -Cr-Nb, Co-Cr-Pr, Co-Ta, Co-Mo, Co-Ni are magnetic field generators for inducing magnetron emission, and it is necessary to provide a gap in the target. You can do it accordingly. Reference numeral 7 is a high frequency power source, 8 is a vacuum container, 9 is a gas introduction port, 10 is a variable leak valve, and 11 is a vacuum exhaust hole, which is connected to the vacuum pump P. 12 is a high voltage introduction terminal. 13
Is a mask, 14 is a hydrogen ion generator, 15 is a hydrogen ion beam, 16 is an exclusive exhaust system for an ion system, and 17 is a hydrogen ion irradiation tube. The formation of a layer containing excessive hydrogen in the surface layer of the polymer film depends on whether hydrogen ion irradiation or neutral hydrogen beam irradiation is used, and glow discharge of hydrogen or glow discharge treatment containing hydrogen gas is not sufficient. is there.
更に具体的に磁気記録媒体の実施例を従来例と比較した
データを示す。More specifically, the data of the example of the magnetic recording medium compared with the conventional example will be shown.
図の装置を用い、直径1mの円筒キャンでキャン温度を30
℃に保ち、13.56(MHz)の高周波マグネトロンスパッタ
法でCo−Cr(Cr20.9wt%)垂直磁化膜を形成し、その上
にパーフルオロオクタン酸を50Å真空蒸着し、8mm幅の
磁気テープを製造し、ギャップ長0.2μmのフェライト
ヘッドで記録波長0.6μmを記録に再生C/N(信号対雑音
比)を相対比較し、スチル状態で出力が2(dB)低下す
るまでのスチル耐久時間を比較した。Using the device shown in the figure, a can temperature of 30 m
Keeping the temperature at ℃, form a Co-Cr (Cr20.9wt%) perpendicular magnetic film by 13.56 (MHz) high frequency magnetron sputtering method, and perfluorooctanoic acid is vacuum-deposited on it by 50Å to produce 8mm width magnetic tape. Then, a ferrite head with a gap length of 0.2 μm was used to record at a recording wavelength of 0.6 μm. The reproduction C / N (signal to noise ratio) was compared and the still endurance time until the output decreased by 2 (dB) was compared in the still state. did.
12KeVの水素イオンを12μA/cm2照射してから、垂直磁化
膜0.12μm形成したテープAのC/Nを基準にとったとこ
ろ、従来例は0.12μmの垂直磁化膜で構成したテープB
は−3.9(dB),0.17μmの垂直磁化膜で構成したテープ
Cが−1.1(dB)であった。スチル耐久時間はテープA,
B,C夫々38分,20分,18分であった。After irradiating 12 KeA hydrogen ions at 12 μA / cm 2, the C / N of the tape A formed with the perpendicular magnetization film of 0.12 μm was taken as a reference, and the conventional example was the tape B composed of the perpendicular magnetization film of 0.12 μm.
Was -1.1 (dB) for tape C composed of a perpendicular magnetization film of -3.9 (dB) and 0.17 μm. Still life is tape A,
It was 38 minutes, 20 minutes and 18 minutes respectively for B and C.
テープA,B,Cの高速作製度合は、テープAが8m/min,テー
プCが5.5m/minであった。The high-speed production degree of the tapes A, B, and C was 8 m / min for the tape A and 5.5 m / min for the tape C.
製膜速度の差は、Co−Cr膜を電子ビーム蒸着法で形成す
る時の方が開きが大きく、約2倍本実施例の方が高速化
がはかれることを確かめてある。It has been confirmed that the difference in the film forming speed is larger when the Co—Cr film is formed by the electron beam evaporation method, and about twice as fast as in the present embodiment.
又、斜め蒸着法で比較した時には、高速性よりも、むし
ろ、磁気特性,特に保磁力が30%増加し、角形比が25%
改善される等、本発明の有価値性は大きい。Also, when compared with the oblique deposition method, the magnetic characteristics, especially the coercive force, increased by 30% and the squareness ratio was 25%, rather than the high speed.
The value of the present invention is great as it is improved.
発明の効果 以上のように本発明によれば、磁気記録層の性能向上と
高速作製を両立されられるといったすぐれた効果があ
る。EFFECTS OF THE INVENTION As described above, according to the present invention, there is an excellent effect that performance improvement of the magnetic recording layer and high-speed production can be achieved at the same time.
図は本発明の実施例に用いたスパッタリング装置の一例
の概略構成図である。 1……高分子フィルム、2……円筒キャン、5……強磁
性金属ターゲット、14……水素イオン発生器、15……水
素イオンビーム。FIG. 1 is a schematic configuration diagram of an example of a sputtering device used in the examples of the present invention. 1 ... Polymer film, 2 ... Cylindrical can, 5 ... Ferromagnetic metal target, 14 ... Hydrogen ion generator, 15 ... Hydrogen ion beam.
Claims (1)
素含有層を形成した後、強磁性金属薄膜を形成すること
を特徴とする磁気記録媒体の製造方法。1. A method of manufacturing a magnetic recording medium, which comprises forming an excess hydrogen-containing layer on the surface of a moving polymer film and then forming a ferromagnetic metal thin film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26700086A JPH0799578B2 (en) | 1986-11-10 | 1986-11-10 | Method of manufacturing magnetic recording medium |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26700086A JPH0799578B2 (en) | 1986-11-10 | 1986-11-10 | Method of manufacturing magnetic recording medium |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63121121A JPS63121121A (en) | 1988-05-25 |
| JPH0799578B2 true JPH0799578B2 (en) | 1995-10-25 |
Family
ID=17438667
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP26700086A Expired - Lifetime JPH0799578B2 (en) | 1986-11-10 | 1986-11-10 | Method of manufacturing magnetic recording medium |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0799578B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003067908A (en) * | 2001-08-23 | 2003-03-07 | Fuji Electric Co Ltd | Perpendicular magnetic recording medium and manufacturing method thereof |
-
1986
- 1986-11-10 JP JP26700086A patent/JPH0799578B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS63121121A (en) | 1988-05-25 |
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