JPH0810496B2 - Optical head manufacturing method - Google Patents
Optical head manufacturing methodInfo
- Publication number
- JPH0810496B2 JPH0810496B2 JP61273393A JP27339386A JPH0810496B2 JP H0810496 B2 JPH0810496 B2 JP H0810496B2 JP 61273393 A JP61273393 A JP 61273393A JP 27339386 A JP27339386 A JP 27339386A JP H0810496 B2 JPH0810496 B2 JP H0810496B2
- Authority
- JP
- Japan
- Prior art keywords
- chip
- optical head
- prism
- laser
- semiconductor substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
- H01S5/0202—Cleaving
Landscapes
- Optical Head (AREA)
- Semiconductor Lasers (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は光学ヘッドの製造方法に係り、特に半導体基
板に光検出素子、レーザ半導体チップ及びプリズムを一
体に集積化した光学ヘッドの製造方法に関する。The present invention relates to a method for manufacturing an optical head, and more particularly to a method for manufacturing an optical head in which a photodetector, a laser semiconductor chip and a prism are integrally integrated on a semiconductor substrate. .
本発明の光学ヘッドの製造方法は、半導体基板に複数
の光検出素子を形成し、次に複数のレーザ半導体チップ
からなる棒状のチップバー及び同じく棒状のプリズムを
上述の半導体基板上に配設して、これらを同時に切断し
て光検出素子、レーザ半導体チップ及びプリズムよりな
る光学ヘッドを得る場合にマウント部品の位置精度がバ
ラツキを生じないようにしたものである。The optical head manufacturing method of the present invention comprises forming a plurality of photodetecting elements on a semiconductor substrate, and then disposing a rod-shaped chip bar composed of a plurality of laser semiconductor chips and a rod-shaped prism on the semiconductor substrate. Then, when these are cut at the same time to obtain an optical head composed of a photo-detecting element, a laser semiconductor chip and a prism, the positional accuracy of the mount parts does not vary.
CD(コンパクトディスク)等のピット情報を検出する
ための光学ヘッドとしては種々の構造のものが提案され
ている。第2図は本出願人が先に特願昭61−38575号で
提案した光学ヘッドの斜視図を示すものである。Various types of optical heads have been proposed as optical heads for detecting pit information such as CDs (compact disks). FIG. 2 is a perspective view of the optical head previously proposed by the present applicant in Japanese Patent Application No. 61-38575.
第2図において、(1)は全体として光学ヘッドを示
し、矩形状のシリコン等の半導体基板(2)の主面の例
えば左半分の位置にPINダイオード等の第1の光検出素
子(3)を形成する。この第1の光検出素子(3)は例
えば2組の3分割された光検出素子(3a)、(3b)から
なる。更に半導体基板(2)の主面の右半分の位置にモ
ニタ用のPINダイオード等からなる第2の光検出素子
(4)が形成される。これら第1及び第2の光検出素子
(3)、(4)間においてレーザ半導体チップ(5)が
半導体基板(2)に半田等で直接固定されると共に、断
面台形のプリズム(6)が第1の光検出素子(3)の上
に固定される。このプリズム(6)のレーザ半導体チッ
プ(5)の活性層の発光点と対向している面(6a)は半
透過反射面となされ、半導体基板(2)に接している面
(6b)のうち光検出素子(3a)、(3b)と接する面以外
と、面(6b)に対向している面(6c)は共に反射面とな
されている。In FIG. 2, (1) shows an optical head as a whole, and a first photo-detecting element (3) such as a PIN diode is provided at, for example, the left half position of the main surface of a semiconductor substrate (2) made of rectangular silicon or the like. To form. The first photodetector element (3) is composed of, for example, two sets of photodetector elements (3a) and (3b) divided into three. Further, a second photodetector element (4) including a PIN diode for monitoring is formed on the right half position of the main surface of the semiconductor substrate (2). The laser semiconductor chip (5) is directly fixed to the semiconductor substrate (2) with solder or the like between the first and second photodetecting elements (3) and (4), and the prism (6) having a trapezoidal cross section is provided. It is fixed on the photodetector element (3) of No. 1. The surface (6a) of the prism (6) facing the light emitting point of the active layer of the laser semiconductor chip (5) is a semi-transmissive reflective surface, and of the surface (6b) in contact with the semiconductor substrate (2). The surface (6c) facing the surface (6b) and the surface (6c) other than the surfaces in contact with the photodetectors (3a) and (3b) are both reflective surfaces.
上述の構成において、レーザ半導体チップ(5)の活
性層から放射されたレーザビーム(7a)はプリズム
(6)の半透過反射面(6a)で反射され、図示しないが
対物レンズを介して光ディスク上に入射レーザビーム
(7b)として照射され、ディスクで反射された入射レー
ザビーム(7b)の反射光はプリズム(6)の面(6a)を
透過し、第1の1組目の光検出素子(3a)に入射され、
ここで反射された透過光はプリズム(6)の面(6c)で
反射して第1の2組目の光検出素子(3b)に入射され
て、ディスクのピットに対応するデータを検出する。尚
(7c)はレーザ半導体チップ(5)の反対の活性層から
放出されるモニター用の出射レーザビームを示す。In the above configuration, the laser beam (7a) emitted from the active layer of the laser semiconductor chip (5) is reflected on the semi-transmissive reflection surface (6a) of the prism (6), and is not shown on the optical disk via an objective lens, though not shown. Is irradiated as an incident laser beam (7b), and the reflected light of the incident laser beam (7b) reflected by the disk is transmitted through the surface (6a) of the prism (6) to form a first first set of photodetectors ( 3a)
The transmitted light reflected here is reflected by the surface (6c) of the prism (6) and is incident on the first second set of photodetectors (3b) to detect data corresponding to pits on the disk. Incidentally, (7c) shows an emission laser beam for monitoring emitted from the active layer opposite to the laser semiconductor chip (5).
このような、光学ヘッド(1)を製造する方法の従来
例を第3図について説明する。第3図Aで円盤状に形成
されたシリコンウエハー(10)は、第3図Bのプロセス
工程で通常の半導体形成工程と同じように格子状の複数
のチップ(11)内に夫々、第2図で示した第1及び第2
の光検出素子(3)、(4)即ち、PINダイオードを形
成すると共に、レーザ半導体チップ(5)を固定するた
めの錫半田電極やボンディングパット形成などが行なわ
れる。次に、第3図Cに示すように、複数の所定形状に
加工されたレーザ半導体チップ(5)がシリコンウエハ
ー(10)のチップ(11)の錫半田電極形成面上にマウン
トされる。更に、第3図Dに示すようにシリコンウエハ
ー(10)を300度Cで5秒間程度加熱して複数のレーザ
半導体チップ(5)を半導体基板であるシリコンウエハ
ー(10)の夫々のチップ(11)・・・に直接融着する。
次の工程では第3図Eの如く所定寸法に形成された複数
のプリズム(6)がチップ毎に形成した、第1の光検出
素子(3a)、(3b)上に接着される。次にシリコンウエ
ハー(10)を1つのチップ(11)となるように格子状に
カットして、第3図Fに示すように1つのチップ(11)
を構成している半導体基板(2)上に第1及び第2の光
検出素子(3)、(4)とレーザ半導体(5)及びプリ
ズム(6)が配置された集積型の光学ヘッド(1)が出
来上る。次に第3図Gの如く、フレキシブルワイヤ等の
プリント基板(13)に光学ヘッド(1)をダイボンド
し、第3図Hの如くプリント基板(13)の外部電極と、
チップ(11)に形成したボンデングパッド間に金線等の
ワイヤをボンデングするようになされていた。A conventional example of such a method of manufacturing the optical head (1) will be described with reference to FIG. The silicon wafer (10) formed in the disk shape in FIG. 3A is divided into a plurality of grid-shaped chips (11) in the process step of FIG. First and second shown in the figure
The photodetectors (3) and (4), that is, the PIN diode, are formed, and tin solder electrodes and bonding pads for fixing the laser semiconductor chip (5) are formed. Next, as shown in FIG. 3C, a plurality of laser semiconductor chips (5) processed into a predetermined shape are mounted on the tin solder electrode forming surface of the chip (11) of the silicon wafer (10). Further, as shown in FIG. 3D, the silicon wafer (10) is heated at 300 ° C. for about 5 seconds to form a plurality of laser semiconductor chips (5) on each chip (11) of the silicon wafer (10) which is a semiconductor substrate. ) ... directly fused to.
In the next step, a plurality of prisms (6) each having a predetermined size as shown in FIG. 3E are adhered on the first photodetector elements (3a) and (3b) formed for each chip. Next, the silicon wafer (10) is cut into one chip (11) in a grid pattern, and one chip (11) is cut as shown in FIG. 3F.
The integrated optical head (1) in which the first and second photodetector elements (3) and (4), the laser semiconductor (5) and the prism (6) are arranged on the semiconductor substrate (2) constituting the ) Is completed. Next, as shown in FIG. 3G, the optical head (1) is die-bonded to the printed circuit board (13) such as a flexible wire, and the external electrodes of the printed circuit board (13) are connected as shown in FIG. 3H.
A wire such as a gold wire is bonded between the bonding pads formed on the chip (11).
叙上の従来構成による光学ヘッドの製造方法による
と、シリコンウエハー(10)の複数チップ(11)上に所
定形状に予め切断したレーザ半導体チップ(5)とプリ
ズム(6)をマウントしなければならない。この為にレ
ーザ半導体(5)とプリズム(6)を切断加工する工程
が必要なだけでなく、小さなチップ(11)上に更に小さ
なレーザ半導体チップ(5)及びプリズム(6)を1つ
1つ位置決めしながらマウントしなければならないので
取付位置精度にバラツキを生じ、チップ(11)の寸法幅
内(極めて短い)のスパンで位置決めを行なわなければ
ならないのでマウントする場合の精度を上げることがで
きない欠点があった。According to the above-described conventional method of manufacturing an optical head, a laser semiconductor chip (5) and a prism (6) that have been cut into a predetermined shape must be mounted on a plurality of chips (11) of a silicon wafer (10). . Therefore, not only a step of cutting the laser semiconductor (5) and the prism (6) is required, but also a smaller laser semiconductor chip (5) and a prism (6) are individually mounted on the small chip (11). Since the mounting must be done while positioning, the mounting position accuracy varies, and the positioning must be performed within the span within the dimension width of the chip (11) (extremely short), so the mounting accuracy cannot be increased. was there.
本発明は叙上の欠点に鑑みなされたものであり、その
目的とするところは光学ヘッド製造時に半導体基板に部
品を取付ける際の位置精度のバラツキを抑え、高精度に
取付けることの出来る光学ヘッドの製造方法を提供する
にある。The present invention has been made in view of the above drawbacks, and an object of the present invention is to suppress variations in positional accuracy when mounting components on a semiconductor substrate during manufacturing of an optical head, and to provide an optical head that can be mounted with high accuracy. It is to provide a manufacturing method.
本発明の光学ヘッドの製造方法は半導体基板(2)か
らなるウエハー(10)に複数の光検出素子(3),
(4)を格子状に形成し、このウエハー(10)に格子状
に形成した複数の光検出素子(3),(4)の配列方向
と平行に複数のレーザ半導体チップからなる棒状の複数
のチップバー(15)を配設し、このチップバー(15)と
平行に棒状の複数のプリズム(16)を配設し、ウエハー
(10)とその上に配設した複数のチップバー(15)及び
棒状のプリズム(16)を格子状に同時に切断して、光検
出素子、レーザ半導体チップ及びプリズムよりなる光学
ヘッドを得るようにしたものである。The method of manufacturing an optical head according to the present invention comprises a wafer (10) made of a semiconductor substrate (2), a plurality of photodetector elements (3),
(4) is formed in a grid pattern, and a plurality of rod-shaped semiconductor chips made of a plurality of laser semiconductor chips are arranged parallel to the arrangement direction of the photodetection elements (3), (4) formed in a grid pattern on the wafer (10). A chip bar (15) is arranged, a plurality of rod-shaped prisms (16) are arranged in parallel with the chip bar (15), a wafer (10) and a plurality of chip bars (15) arranged on the wafer (10). The rod-shaped prism (16) is simultaneously cut into a lattice shape to obtain an optical head including a photodetector, a laser semiconductor chip, and a prism.
本発明によれば棒状のチップバー及び棒状のプリズム
を半導体基板上にマウントしてこれら三部品を同時に切
断するためにマウント精度のバラツキがなくなり、工程
を減少させることの出来る光学ヘッドの製造方法を提供
出来る。According to the present invention, a rod-shaped chip bar and a rod-shaped prism are mounted on a semiconductor substrate and these three parts are cut at the same time, so that there is no variation in mounting precision, and a method of manufacturing an optical head capable of reducing the number of steps is provided. Can be provided.
以下、本発明の光学ヘッドの製造方法を第1図の組立
工程図によって詳記する。尚、第3図の従来の光学ヘッ
ド組立工程と対応する部分には同一符号を付して重複説
明を省略する。本発明の光学ヘッドは第2図に示したと
同様の光学ヘッド組立体を得るための光学ヘッドの製造
方法を提供するものである。Hereinafter, the method of manufacturing the optical head of the present invention will be described in detail with reference to the assembly process diagram of FIG. The parts corresponding to those of the conventional optical head assembling process shown in FIG. The optical head of the present invention provides an optical head manufacturing method for obtaining an optical head assembly similar to that shown in FIG.
第1図において、第1図A、Bの工程は第3図A、B
の工程とおなじであり、シリコンウエハー(10)の複数
チップ(11)毎に第1及び第2のPINダイオードからな
る光検出素子(3)、(4)が第2図で記載したように
形成されている。但し、レーザ半導体チップバー取付電
極はチップバー状に形成される。今、シリコンウエハー
(10)上で見れば格子状にバターニングされたチップ
(11)の長手方向に沿って光検出素子(3)、(4)が
形成されているので第1図Cに示すレーザ半導体チップ
バーマウント工程では、シリコンウエハー(10)上に前
述のチップ(11)の長手方向と直交する方向と平行に複
数の棒状のチップバー(15)をマウントする。ここでチ
ップバー(15)はシリコンウエハー(10)の直径と略同
一の長さを有し、シリコンウエハー上にバターニングさ
れる格子状チップのピッチに等しい位置に複数のレーザ
半導体チップ(又はレーザ半導体活性層)を有する。例
えばこのチップバーはGaAs基板等にチップ(11)の格子
状ピッチでレーザ半導体を形成したものをウエハーから
棒状に切り出したものであってよく、このチップバー
(15)はチップバー形状に形成されたチップバー電極上
にマウントされる。次の第1図Dに示す工程ではシリコ
ンウエハー(10)が300度Cで5秒間程度加熱され、チ
ップバー(15)はシリコンウエハー(10)に固く融着さ
れる。更に第1図Eに示すように複数の棒状プリズム
(16)〔長さは略ウエハーの直径と等しい〕をチップバ
ー(15)と平行に、且つ第1の光検出素子(3)の上に
マウントし、シリコンウエハー(10)上にマウントされ
たチップバー(15)と棒状プリズム(16)からなる三部
品を同時に格子状に切断すると、第1図Fに示す様に1
つの半導体基板(2)からなるチップ(11)上に第1及
び第2の光検出素子(3)、(4)が形成され、更にや
や長めのレーザ半導体チップ(15a)とプリズム(6)
がマウントされた光学ヘッド(1)が複数個同時に形成
出来る。第1図G、Hで示すダイボンド及びワイヤボン
ド工程は第3図G、Hの工程と全く同じである。この様
な製造方法によれば、二部品の切断工程が省略出来、部
品取付精度が向上するだけでなく、部品のマウント、接
着後にダイシングを行なうので接着不良等の発見を未然
に行うことが出来る。In FIG. 1, the steps of FIGS. 1A and 1B are shown in FIGS.
The same as the above process, the photodetector elements (3) and (4) composed of the first and second PIN diodes are formed as shown in FIG. 2 for each of the plurality of chips (11) of the silicon wafer (10). Has been done. However, the laser semiconductor chip bar attachment electrode is formed in a chip bar shape. Now, when viewed on the silicon wafer (10), the photo-detecting elements (3) and (4) are formed along the longitudinal direction of the chip (11) which is patterned in a lattice shape, so that it is shown in FIG. 1C. In the laser semiconductor chip bar mounting step, a plurality of rod-shaped chip bars (15) are mounted on a silicon wafer (10) in parallel with the direction orthogonal to the longitudinal direction of the chips (11). Here, the chip bar (15) has a length substantially the same as the diameter of the silicon wafer (10), and a plurality of laser semiconductor chips (or lasers) are arranged at a position equal to the pitch of lattice-shaped chips to be patterned on the silicon wafer. Semiconductor active layer). For example, this chip bar may be a GaAs substrate or the like on which laser semiconductors are formed at the lattice pitch of the chips (11) and cut out into a bar shape from the wafer. The chip bar (15) is formed in a chip bar shape. Mounted on the tip bar electrode. In the next step shown in FIG. 1D, the silicon wafer (10) is heated at 300 ° C. for about 5 seconds, and the chip bar (15) is firmly fused to the silicon wafer (10). Further, as shown in FIG. 1E, a plurality of rod-shaped prisms (16) [the length of which is approximately equal to the diameter of the wafer] are arranged in parallel with the chip bar (15) and on the first photodetecting element (3). When three parts, which are mounted and mounted on a silicon wafer (10), consisting of a chip bar (15) and a rod-shaped prism (16), are simultaneously cut into a grid pattern, as shown in FIG.
First and second photodetector elements (3) and (4) are formed on a chip (11) composed of two semiconductor substrates (2), and a rather long laser semiconductor chip (15a) and prism (6)
A plurality of optical heads (1) mounted with can be simultaneously formed. The die-bonding and wire-bonding steps shown in FIGS. 1G and H are exactly the same as the steps in FIGS. According to such a manufacturing method, the step of cutting the two parts can be omitted, and not only the accuracy of mounting the parts is improved, but also because the dicing is performed after mounting and bonding the parts, it is possible to detect a defective adhesion or the like. .
本発明の光学ヘッドの製造方法によれば予めレーザ半
導体チップ(5)の寸法に切断するための工程と、プリ
ズム(6)を同じ様に小寸法に切断する工程がないだ
け、これら部品の単価を廉価にすることが出来るだけで
なく、小さく切断したレーザ半導体チップ(5)やプリ
ズム(6)をウエハーチップ(11)上にマウントするの
に比べて、棒状の長いチップバー(15)と棒状プリズム
(16)をシリコンウエハーの径で定まるスパンで位置決
めが出来るので位置取付精度は格段に向上する。更にレ
ーザ半導体チップ及びプリズムをマウントするための工
数が大幅に削減出来る効果を有する。According to the method of manufacturing an optical head of the present invention, since there is no step for cutting the size of the laser semiconductor chip (5) in advance and a step for cutting the prism (6) to the same small size, the unit price of these parts Not only is it possible to reduce the cost, but it is also possible to mount a laser-semiconductor chip (5) or prism (6) that is cut into small pieces on a wafer chip (11), compared with a long bar-shaped bar (15) Since the prism (16) can be positioned in a span determined by the diameter of the silicon wafer, the position mounting accuracy is greatly improved. Further, there is an effect that the number of steps for mounting the laser semiconductor chip and the prism can be greatly reduced.
第1図は本発明の光学ヘッドの製造工程図、第2図は従
来の光学ヘッドの斜視図、第3図は従来の光学ヘッドの
製造工程図である。 (1)は光学ヘッド、(2)は半導体基板、(3)、
(4)は第1及び第2の光検出素子、(5)はレーザ半
導体チップ、(6)はプリズム、(10)はシリコンウエ
ハー、(15)はチップバー、(16)は棒状プリズムであ
る。FIG. 1 is a manufacturing process diagram of an optical head of the present invention, FIG. 2 is a perspective view of a conventional optical head, and FIG. 3 is a manufacturing process diagram of a conventional optical head. (1) is an optical head, (2) is a semiconductor substrate, (3),
(4) is the first and second light detecting elements, (5) is a laser semiconductor chip, (6) is a prism, (10) is a silicon wafer, (15) is a chip bar, and (16) is a rod-shaped prism. .
Claims (1)
成する工程と、 上記ウエハー上に格子状に配列した複数の光検出素子の
行又は列方向と平行に複数のレーザ半導体チップからな
る棒状の複数のチップバーを配設する工程と、 上記半導体基板上に上記チップバーと平行に棒状の複数
のプリズムを配設する工程と、 上記半導体基板並びにその上の上記複数のチップバー及
びプリズムを格子状に同時に切断して、光検出素子、レ
ーザ半導体チップ及びプリズムよりなる光学ヘッドを得
る工程とを有することを特徴とする光学ヘッドの製造方
法。1. A step of forming a plurality of photodetection elements on a wafer in a grid pattern, and a plurality of laser semiconductor chips parallel to the row or column direction of the photodetection elements arranged in a grid pattern on the wafer. Arranging a plurality of rod-shaped chip bars, arranging a plurality of rod-shaped prisms on the semiconductor substrate in parallel with the chip bars, and the semiconductor substrate and the plurality of chip bars and prisms on the semiconductor substrate. At the same time to obtain an optical head composed of a photo-detecting element, a laser semiconductor chip, and a prism, and manufacturing the optical head.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61273393A JPH0810496B2 (en) | 1986-11-17 | 1986-11-17 | Optical head manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61273393A JPH0810496B2 (en) | 1986-11-17 | 1986-11-17 | Optical head manufacturing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63127444A JPS63127444A (en) | 1988-05-31 |
| JPH0810496B2 true JPH0810496B2 (en) | 1996-01-31 |
Family
ID=17527272
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61273393A Expired - Lifetime JPH0810496B2 (en) | 1986-11-17 | 1986-11-17 | Optical head manufacturing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0810496B2 (en) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06169136A (en) * | 1992-11-30 | 1994-06-14 | Canon Inc | Light emitting device, optical semiconductor device and manufacture thereof |
| JP3438365B2 (en) * | 1994-11-29 | 2003-08-18 | ソニー株式会社 | Composite optical device and method of manufacturing the same |
| WO2004114292A1 (en) * | 2003-06-24 | 2004-12-29 | Koninklijke Philips Electronics N.V. | Laser-detector-grating-unit |
| WO2004113955A2 (en) * | 2003-06-24 | 2004-12-29 | Koninklijke Philips Electronics N.V. | Beam-shaper |
| US7889622B2 (en) | 2004-06-03 | 2011-02-15 | Panasonic Corporation | Optical head for optical recorder/reproducer |
| JP2006032765A (en) * | 2004-07-20 | 2006-02-02 | Nichia Chem Ind Ltd | Semiconductor laser package |
| US8378287B2 (en) * | 2007-06-27 | 2013-02-19 | Koninklijke Philips Electronics N.V. | Optical sensor module including a diode laser and a substrate transparent to radiation emitted by the diode laser and a method for manufacturing an optical sensor module |
| EP2651116A4 (en) | 2011-08-09 | 2015-07-01 | Olympus Medical Systems Corp | SHOOTING DEVICE AND METHOD FOR MANUFACTURING THE SAME |
| WO2015190348A1 (en) * | 2014-06-13 | 2015-12-17 | 日本碍子株式会社 | Optical device, and optical-device production method |
-
1986
- 1986-11-17 JP JP61273393A patent/JPH0810496B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS63127444A (en) | 1988-05-31 |
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| EXPY | Cancellation because of completion of term |