JPH0814028B2 - Fine pattern structure and manufacturing method thereof - Google Patents
Fine pattern structure and manufacturing method thereofInfo
- Publication number
- JPH0814028B2 JPH0814028B2 JP11425889A JP11425889A JPH0814028B2 JP H0814028 B2 JPH0814028 B2 JP H0814028B2 JP 11425889 A JP11425889 A JP 11425889A JP 11425889 A JP11425889 A JP 11425889A JP H0814028 B2 JPH0814028 B2 JP H0814028B2
- Authority
- JP
- Japan
- Prior art keywords
- pattern
- resist pattern
- base sheet
- hole
- fine
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- ing And Chemical Polishing (AREA)
- Lead Frames For Integrated Circuits (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は基材シートの厚み(板厚)と孔径もしくはス
リット幅との比、即ち板厚/孔径もしくは板厚/スリッ
ト幅(以下、アスペクト比と称する)が1以上の微細な
透孔パターンを有する微細パターン構造体及びその製造
方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial field of application] The present invention relates to the ratio of the thickness (plate thickness) of a substrate sheet to the hole diameter or slit width, that is, plate thickness / hole diameter or plate thickness / slit width (hereinafter, aspect ratio). The present invention relates to a fine pattern structure having a fine through-hole pattern having a ratio of 1 or more) and a manufacturing method thereof.
微細パターン構造体はリードフレーム、各種メタルマ
スク、シャドウマスク、回路基板、コネクター、エンコ
ーダー、スリット板、各種フィルター等に利用されてい
るが、その製法は一般にプレス加工或いはエッチング法
を用いておこなわれている。その他、アスペクト比の大
きい孔やスリットを形成するためイオンミリングやレー
ザーを用いた加工法、あるいは特開昭51−40869号公報
のように板圧を薄くして同一形状に加工した複数板の板
を重ね合せる方法も提案されている。The fine pattern structure is used for lead frames, various metal masks, shadow masks, circuit boards, connectors, encoders, slit plates, various filters, etc., but the manufacturing method is generally performed by pressing or etching. There is. In addition, a processing method using ion milling or laser to form holes or slits having a large aspect ratio, or a plurality of plates processed into the same shape by reducing the plate pressure as disclosed in JP-A-51-40869 A method of superposing is also proposed.
しかし、従来のプレス加工法或いはエッチング法では
アスペクト比が1以上の透孔パターンを形成することが
困難であり、又、複数の板を重ねる方法は複数の板の相
対位置を正確に定めることが著るしく困難なため、透孔
パターン寸法ならびに厚みについて高積度のものが得難
い。However, it is difficult to form a through-hole pattern having an aspect ratio of 1 or more by the conventional pressing method or etching method, and in the method of stacking a plurality of plates, the relative positions of the plurality of plates can be accurately determined. Since it is extremely difficult, it is difficult to obtain a product with a high through-hole pattern size and thickness.
また、上述のイオンミリング加工又はレーザー加工に
よる方法は加工速度が遅く、加工を欲しない部分の損傷
のおそれがあるとともに加工設備の費用増大を招くおそ
れがある。Further, the above-mentioned method using ion milling or laser processing has a low processing speed, which may cause damage to a portion that is not desired to be processed and may increase the cost of processing equipment.
したがって本発明はアスペクト比を1以上の高い値に
容易に制御することができ、製造コスト、生産効率的に
も有利な微細パターン構造体及びその製造方法を提供す
ることを目的とする。Therefore, an object of the present invention is to provide a fine pattern structure that can easily control the aspect ratio to a high value of 1 or more, and is advantageous in manufacturing cost and production efficiency, and a method for manufacturing the same.
本発明は上記課題を解決するため、基材シートの厚み
方向に対し斜め方向に透孔を穿設し、これによりアスペ
クト比を1以上に制御するという手段を講じた。In order to solve the above-mentioned problems, the present invention takes measures to form a through hole obliquely with respect to the thickness direction of the base sheet and thereby control the aspect ratio to 1 or more.
即ち、本発明は基材シートの厚み方向に貫通する微細
な透孔パターンが形成されてなる微細パターン構造体で
あって、該透孔パターンの各透孔が該基材シートの厚み
方向に対し斜め方向に貫通し、かつアスペクト比が1以
上であることを特徴とする微細パターン構造体を提供す
るものである。That is, the present invention is a fine pattern structure in which a fine through hole pattern penetrating in the thickness direction of the base sheet is formed, and each through hole of the through hole pattern is in the thickness direction of the base sheet. The present invention provides a fine pattern structure which penetrates in an oblique direction and has an aspect ratio of 1 or more.
さらに本発明は基材シートの表面に開口部で仕切られ
た第1のレジストパターンを形成するとともに、同じく
裏面に該第1のレジストパターンと対応する開口部で仕
切られた第2のレジストパターンを形成し、該基材シー
トの表裏面からエッチング液を吹き付けて第1及び第2
のレジストパターンの開口部を介して該基材シートを厚
み方向にエッチングし微細な貫通孔パターンを形成させ
る微細パターン構造体の製造方法において、該第1のレ
ジストパターンの開口部とこれに対応する第2のレジス
トパターンの開口部との位置関係が互いに斜めに対向す
るような互いにずれた位置を以ってこれらレジストパタ
ーンを形成し、ついで上記エッチングをおこなうことを
特徴とする製造方法を提供するものである。Further, according to the present invention, a first resist pattern partitioned by openings is formed on the front surface of the base material sheet, and a second resist pattern partitioned by openings corresponding to the first resist pattern is formed on the back surface. The first and second layers are formed by spraying an etching solution from the front and back surfaces of the base sheet.
In the method of manufacturing a fine pattern structure in which the base sheet is etched through the opening of the resist pattern in the thickness direction to form a fine through-hole pattern, the opening of the first resist pattern and the corresponding A manufacturing method characterized in that these resist patterns are formed at positions displaced from each other such that the positional relationship between the second resist pattern and the opening is diagonally opposed to each other, and then the etching is performed. It is a thing.
本発明の微細パターン構造体においては透孔パターン
の各透孔が基材シートの厚み方向に対し斜めに向って貫
通しているため、基材シートの面に対し垂直な方向から
見たときの透孔の孔径又はスリット幅は見掛上小さくな
り、したがってアスペクト比の著るしい増大を図ること
が可能となる。In the fine pattern structure of the present invention, since each through hole of the through hole pattern penetrates obliquely with respect to the thickness direction of the base sheet, when viewed from a direction perpendicular to the surface of the base sheet. The hole diameter or the slit width of the through hole is apparently reduced, so that the aspect ratio can be remarkably increased.
また、本発明の製造方法においては上述の斜め方向の
透孔を形成するため、基材シートの表裏面に形成するレ
ジストパターンを開口部が互いに斜めに対向するように
若干ずらして形成し、ついでこれら開口を介してエッチ
ングすることにより自然に斜行する貫通孔が形成され、
これにより透孔パターンのアスペクト比を容易に1以上
に制御することが可能となる。Further, in the manufacturing method of the present invention, in order to form the oblique through-holes described above, the resist patterns formed on the front and back surfaces of the base sheet are formed with a slight offset so that the openings are diagonally opposed to each other. By etching through these openings, through-holes that naturally skew are formed,
This makes it possible to easily control the aspect ratio of the through-hole pattern to 1 or more.
以下、本発明を図示の実施例を参照して説明する。 Hereinafter, the present invention will be described with reference to the illustrated embodiments.
まず、第1図(A)に示す如く、例えばリードフレー
ム等に用いられる薄い金属板からなる基材シート1の表
裏面に開口部2で仕切られたレジストパターン3をそれ
ぞれ形成する。このレジストパターン3は幅広部3aと幅
狭部3bとが開口部2を介して交互に形成されており、基
材シート1の表面のレジストパターン3の幅広部3aの真
下に裏面のレジストパターンの幅狭部3bが位置するよう
に相互にずらして形成されている。したがって、基材シ
ート1の表面のレジストパターン3の各開口部2は対応
する裏面のレジストパターン3の各開口2と破線aで示
す如く互いに斜めに対向することになる。First, as shown in FIG. 1A, a resist pattern 3 partitioned by openings 2 is formed on the front and back surfaces of a base material sheet 1 made of a thin metal plate used for a lead frame or the like, for example. In the resist pattern 3, wide portions 3a and narrow portions 3b are alternately formed via the openings 2. The resist pattern 3 on the front surface of the base sheet 1 has a resist pattern on the back surface directly below the wide portion 3a. The narrow portions 3b are formed so as to be offset from each other so that they are located. Therefore, each opening 2 of the resist pattern 3 on the front surface of the substrate sheet 1 diagonally opposes each opening 2 of the resist pattern 3 on the corresponding back surface as indicated by a broken line a.
この状態で、従来と同様に基材シート1の表裏面から
エッチング液を吹き付ける。これにより基材シート1は
レジストパターン3の各開口部2から等方エッチングさ
れ、第1図(B)に示す如く基材シート1の厚み方向に
対し斜行した貫通孔4が形成される。ついで、レジスト
パターン3を溶解除去することにより第1図(C)に示
す如き微細パターン構造体5を得ることができる。In this state, the etching liquid is sprayed from the front and back surfaces of the base material sheet 1 as in the conventional case. As a result, the base sheet 1 is isotropically etched from the openings 2 of the resist pattern 3 to form through holes 4 oblique to the thickness direction of the base sheet 1 as shown in FIG. 1 (B). Then, the resist pattern 3 is removed by dissolution to obtain a fine pattern structure 5 as shown in FIG. 1 (C).
この場合、貫通孔の孔径又はスリット幅は図示の如く
基材シート1面に対して垂直方向の幅、“W"で表わさ
れ、基材シート1の板厚“T"に対しアスペクト比1以上
の小さい値に保つことができる。In this case, the hole diameter or slit width of the through hole is represented by "W", which is the width in the direction perpendicular to the surface of the base material sheet 1 as shown in the figure, and the aspect ratio is 1 with respect to the plate thickness "T" of the base material sheet 1. The above small values can be maintained.
第2図は本発明の他の実施例を示すものであって、基
材シートに対するレジストパターンの形成方法は前記の
第1図の実施例と基本的に全く同一であり、唯一の異な
る点はレジストパターンの幅狭部3bが網点で形成されて
いることである。したがって、この幅狭部3bもゆるやか
な速度ではあるがエッチングが進行し、エッチング工程
後の形状は第2図(B)に示す如く、基材シート1の表
裏面は凹凸状となる。しかし、アスペクト比(T/W)は
第1図の実施例と同様に1以上に制御することができ
る。FIG. 2 shows another embodiment of the present invention. The method for forming a resist pattern on a base sheet is basically the same as that of the embodiment shown in FIG. 1 except for the only difference. That is, the narrow portion 3b of the resist pattern is formed by halftone dots. Therefore, the narrow portion 3b is also etched at a slow speed, but the etching progresses, and the shape after the etching step is uneven as shown in FIG. 2 (B). However, the aspect ratio (T / W) can be controlled to 1 or more as in the embodiment of FIG.
第3図は本発明のさらに他の例を示すもので、基材シ
ート1表裏面ともに全体的に開口部2を等間隔に仕切ら
れたレジストパターン3が形成されている。しかし、こ
の場合も表面のレジストパターン3は裏面のレジストパ
ターン3に対し若干位置をずらして設けられており、そ
の結果、表裏面の開口部2相互は破線“a"で示す如く斜
めに対向した位置関係となる。この状態で基材シート1
の表裏面からエッチングをおこなうことにより、第1図
の実施例の場合と同様に貫通孔4は基材シート1の厚み
方向に対し斜行した状態で形成され、その結果、第3図
(B)に示す如くアスペクト比(T/W)を1以上に制御
することができる。FIG. 3 shows still another example of the present invention, in which a resist pattern 3 in which openings 2 are partitioned at equal intervals is formed on both front and back surfaces of a base material sheet 1. However, also in this case, the resist pattern 3 on the front surface is provided so as to be slightly displaced from the resist pattern 3 on the back surface, and as a result, the openings 2 on the front and back surfaces are diagonally opposed to each other as indicated by a broken line "a". It becomes a positional relationship. Base sheet 1 in this state
By performing the etching from the front and back surfaces of FIG. 1, the through holes 4 are formed in a state of being oblique to the thickness direction of the base material sheet 1 as in the case of the embodiment of FIG. ), The aspect ratio (T / W) can be controlled to 1 or more.
なお、アスペクト比の大きさはレジストパターンの開
口部の大きさ、基材シートの表裏のレジストパターンの
開口部相互間の位置ずれの大きさ等を考慮して適宜決定
し得る。The size of the aspect ratio can be appropriately determined in consideration of the size of the opening of the resist pattern, the size of the positional deviation between the openings of the resist pattern on the front and back of the base sheet, and the like.
以上詳述した如く、本発明は基材シートの厚み方向に
貫通させる透明パターンの各透孔をこの厚み方向に対し
斜めに穿設するようにしたから、アスペクト比が1以上
の大きさの微細パターン構造体を安価かつ高精度に製造
することが可能となり、従来の如く2枚の基材シートを
貼り合せる必要もなく、従来のイオンミリング加工又は
レーザー加工の如く被加工部を損傷させるおそれもない
など顕著な作用効果を奏する。As described above in detail, according to the present invention, since each through hole of the transparent pattern penetrating in the thickness direction of the base sheet is formed obliquely with respect to this thickness direction, a fine pattern having an aspect ratio of 1 or more is formed. The pattern structure can be manufactured at low cost and with high precision, there is no need to bond two base material sheets together as in the past, and there is a risk of damaging the processed part as in conventional ion milling or laser processing. There is a remarkable effect such as no.
第1図は本発明の微細パターン構造体の製造方法を工程
順に説明する断面図、第2図及び第3図はそれぞれ本発
明の他の実施例を示す断面図である。 1……基材シート、2……開口部、3……レジストパタ
ーン、4……貫通孔、5……微細パターン構造体。FIG. 1 is a sectional view for explaining a method of manufacturing a fine pattern structure of the present invention in the order of steps, and FIGS. 2 and 3 are sectional views showing other embodiments of the present invention. 1 ... Substrate sheet, 2 ... Opening part, 3 ... Resist pattern, 4 ... Through hole, 5 ... Fine pattern structure.
Claims (2)
孔パターンが形成されてなる微細パターン構造体であっ
て、該透孔パターンの各透孔が該基材シートの厚み方向
に対し斜め方向に貫通し、かつアスペクト比が1以上で
あることを特徴とする微細パターン構造体。1. A fine pattern structure having a fine through hole pattern penetrating in the thickness direction of a base sheet, wherein each through hole of the through pattern is in the thickness direction of the base sheet. A fine pattern structure, which penetrates in an oblique direction and has an aspect ratio of 1 or more.
1のレジストパターンを形成するとともに、同じく裏面
に該第1のレジストパターンと対応する開口部で仕切ら
れた第2のレジストパターンを形成し、該基材シートの
表裏面からエッチング液を吹き付けて第1及び第2のレ
ジストパターンの開口部を介して該基材シートを厚み方
向にエッチングし微細な貫通孔パターンを形成させる微
細パターン構造体の製造方法において、該第1のレジス
トパターンの開口部とこれに対応する第2のレジストパ
ターンの開口部との位置関係が互いに斜めに対向するよ
うな互いにずれた位置を以ってこれらレジストパターン
を形成し、ついで上記エッチングをおこなうことを特徴
とする製造方法。2. A first resist pattern partitioned by openings in the front surface of a base sheet, and a second resist pattern similarly partitioned by openings in the back surface corresponding to the first resist pattern. To form a fine through-hole pattern by spraying an etching solution from the front and back surfaces of the base sheet to etch the base sheet in the thickness direction through the openings of the first and second resist patterns. In the method for manufacturing a pattern structure, the positional relationship between the opening of the first resist pattern and the corresponding opening of the second resist pattern is offset from each other such that they are diagonally opposed to each other. A manufacturing method characterized by forming these resist patterns and then performing the above etching.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11425889A JPH0814028B2 (en) | 1989-05-09 | 1989-05-09 | Fine pattern structure and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11425889A JPH0814028B2 (en) | 1989-05-09 | 1989-05-09 | Fine pattern structure and manufacturing method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02294057A JPH02294057A (en) | 1990-12-05 |
| JPH0814028B2 true JPH0814028B2 (en) | 1996-02-14 |
Family
ID=14633285
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11425889A Expired - Fee Related JPH0814028B2 (en) | 1989-05-09 | 1989-05-09 | Fine pattern structure and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0814028B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005057067A (en) * | 2003-08-05 | 2005-03-03 | Renesas Technology Corp | Semiconductor device and manufacturing method thereof |
-
1989
- 1989-05-09 JP JP11425889A patent/JPH0814028B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH02294057A (en) | 1990-12-05 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| GB1502230A (en) | Semiconductor devices | |
| US5819652A (en) | Reduced cavity depth screening stencil | |
| JPH0814028B2 (en) | Fine pattern structure and manufacturing method thereof | |
| JPH04122012A (en) | Alignment mark and its formation method | |
| EP0385480A3 (en) | Aperture pattern printing plate for shadow mask and method of manufacturing the same | |
| JPH0117253B2 (en) | ||
| JPH0767001B2 (en) | Substrate for electronic parts | |
| JP2004253463A (en) | Circuit board manufacturing method, power module board manufacturing method, circuit board and power module board | |
| US6413437B1 (en) | Fine featured photo-resist artwork design for chemical milling | |
| JPS6148582A (en) | Fine processing method | |
| JPS613489A (en) | Manufacture of semiconductor device | |
| JPS61124586A (en) | Etching method of metallic plate | |
| JPS62194628A (en) | Manufacture of semiconductor device | |
| JPH03283645A (en) | Lead frame and manufacture thereof | |
| JPH081940B2 (en) | Fine pattern structure and manufacturing method thereof | |
| JP3081332B2 (en) | Manufacturing method of IC chip mounted parts | |
| JPS63162887A (en) | Method for etching sheet | |
| JPS63245992A (en) | Method of forming electrode on board | |
| GB2110165A (en) | Thin metal precision apertured sheets | |
| JPS63175422A (en) | Manufacture of x-ray mask | |
| JPH0457348A (en) | Sheet metal formation of punched pattern thereof, and worked sheet metal | |
| JPH07107828B2 (en) | Method for forming etching through holes in thin steel plate | |
| KR20210122405A (en) | Method for manufacturing vapor deposition mask and vapor deposition mask manufactured thereby | |
| JPH02270554A (en) | Production of grid plate for shielding | |
| JPH01219181A (en) | Formation of narrow stripe |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |