JPH0815061B2 - Semiconductor substrate ion implantation system - Google Patents
Semiconductor substrate ion implantation systemInfo
- Publication number
- JPH0815061B2 JPH0815061B2 JP61241709A JP24170986A JPH0815061B2 JP H0815061 B2 JPH0815061 B2 JP H0815061B2 JP 61241709 A JP61241709 A JP 61241709A JP 24170986 A JP24170986 A JP 24170986A JP H0815061 B2 JPH0815061 B2 JP H0815061B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor substrate
- ion implantation
- substrate ion
- implantation system
- voltage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は半導体製造プロセスにおいて使用されるイオ
ン注入装置に関し、特に品質事故の防止に関する。Description: TECHNICAL FIELD The present invention relates to an ion implantation apparatus used in a semiconductor manufacturing process, and particularly to prevention of quality accidents.
従来、この種の半導体基板イオン注入装置には後段加
速部の高電圧電源がダウンした時に注入処理をストップ
させる為のインターロックは付属していなかった。Heretofore, this type of semiconductor substrate ion implantation apparatus has not been provided with an interlock for stopping the implantation process when the high-voltage power supply of the post-accelerating unit is down.
上述した従来のイオン注入装置には、後段加速部の高
電圧電源がダウンした時に注入処理をストップさせる為
のインターロックが付属していなかったので、高電圧電
源がダウンした時には、人が気付いて注入処理をストッ
プさせなければ前段加速部の加速電圧のみで注入処理を
行なってしまい、結果として半導体基板の不純物の深さ
方向のコントロールにエラーが生じるという欠点があ
る。The above-mentioned conventional ion implanter did not come with an interlock to stop the implantation process when the high voltage power supply in the post-acceleration section went down, so when a high voltage power supply goes down, people notice it. If the implanting process is not stopped, the implanting process is performed only with the acceleration voltage of the preceding accelerating portion, and as a result, an error occurs in the control of the impurity in the semiconductor substrate in the depth direction.
本発明のイオン注入装置は、後段加速部の高電圧電源
の出力電圧値を判別し、不良の場合に注入処理をストッ
プさせるインターロック回路を有している。The ion implanter of the present invention has an interlock circuit that determines the output voltage value of the high-voltage power supply of the post-accelerating unit and stops the implanting process when there is a defect.
〔実施例〕 次に、本発明について図面を参照して説明する。Next, the present invention will be described with reference to the drawings.
第１図は、本発明の一実施例である。 FIG. 1 shows an embodiment of the present invention.
後段加速部１には、高電圧電源２で発生される電圧が
印加されている。一方、後段加速部１に印加されている
電圧は分圧器３を通してインターロック回路４に出力さ
れる。インターロック回路４では、分圧器３からの電圧
と内部で設定した電圧を比較し、不良ならば注入ストッ
プ信号が注入処理制御部５に出力される。A voltage generated by the high-voltage power supply 2 is applied to the post-stage acceleration unit 1. On the other hand, the voltage applied to the post-stage acceleration unit 1 is output to the interlock circuit 4 through the voltage divider 3. In the interlock circuit 4, the voltage from the voltage divider 3 is compared with the internally set voltage, and if defective, an injection stop signal is output to the injection processing control unit 5.
〔発明の効果〕 以上説明したように本発明は、後段加速部の高電圧電
源のダウン状態を検知し注入処理をストップさせること
により、品質事故を防止できる効果がある。[Effects of the Invention] As described above, the present invention has the effect of preventing quality accidents by detecting the down state of the high-voltage power supply in the post-acceleration section and stopping the injection process.
第１図は本発明の実施例を示す図である。 尚、図において、 １……後段加速部,2……高電圧電源,3……分圧器,4……
インターロック回路,5……注入処理制御部。FIG. 1 is a diagram showing an embodiment of the present invention. In the figure, 1 ... 2nd stage acceleration section, 2 ... high-voltage power supply, 3 ... voltage divider, 4 ...
Interlock circuit, 5 ... Injection processing control unit.
Claims (1)
導体基板イオン注入装置で、イオンビームを加速する為
に２段の加速部を有する半導体基板イオン注入装置にお
いて、前記２段の加速部のうち、後段の加速部の高電圧
電源がダウンした時に、注入処理をストップさせる為の
インターロックを設けた事を特徴とする半導体基板イオ
ン注入装置。1. A semiconductor substrate ion implantation apparatus for implanting impurities into a semiconductor substrate, wherein the semiconductor substrate ion implantation apparatus has a two-stage accelerating section for accelerating an ion beam. A semiconductor substrate ion implantation apparatus characterized in that an interlock is provided to stop the implantation process when the high-voltage power supply in the accelerating unit in the subsequent stage goes down.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61241709A JPH0815061B2 (en) | 1986-10-09 | 1986-10-09 | Semiconductor substrate ion implantation system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61241709A JPH0815061B2 (en) | 1986-10-09 | 1986-10-09 | Semiconductor substrate ion implantation system |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6396859A JPS6396859A (en) | 1988-04-27 |
| JPH0815061B2 true JPH0815061B2 (en) | 1996-02-14 |
Family
ID=17078367
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61241709A Expired - Lifetime JPH0815061B2 (en) | 1986-10-09 | 1986-10-09 | Semiconductor substrate ion implantation system |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0815061B2 (en) |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5991650A (en) * | 1982-11-17 | 1984-05-26 | Hitachi Ltd | Electron-beam welder |
| JPH0612661B2 (en) * | 1983-12-02 | 1994-02-16 | 株式会社日立製作所 | Ion implanter |
-
1986
- 1986-10-09 JP JP61241709A patent/JPH0815061B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6396859A (en) | 1988-04-27 |
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