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JPH0817053B2 - Method for manufacturing sintered body for high frequency dielectric - Google Patents
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JPH0817053B2 - Method for manufacturing sintered body for high frequency dielectric - Google Patents

Method for manufacturing sintered body for high frequency dielectric

Info

Publication number
JPH0817053B2
JPH0817053B2 JP2404558A JP40455890A JPH0817053B2 JP H0817053 B2 JPH0817053 B2 JP H0817053B2 JP 2404558 A JP2404558 A JP 2404558A JP 40455890 A JP40455890 A JP 40455890A JP H0817053 B2 JPH0817053 B2 JP H0817053B2
Authority
JP
Japan
Prior art keywords
sintered body
oxide
calcined product
frequency dielectric
high frequency
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP2404558A
Other languages
Japanese (ja)
Other versions
JPH04220905A (en
Inventor
邦生 土地
久和 藤本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NIKKO COMPANY
Original Assignee
NIKKO COMPANY
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Filing date
Publication date
Application filed by NIKKO COMPANY filed Critical NIKKO COMPANY
Priority to JP2404558A priority Critical patent/JPH0817053B2/en
Publication of JPH04220905A publication Critical patent/JPH04220905A/en
Publication of JPH0817053B2 publication Critical patent/JPH0817053B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】この発明は、高周波誘電体用焼結
体の製造方法に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a sintered body for high frequency dielectric.

【0002】[0002]

【従来の技術】従来、マイクロ波領域において高誘電率
および高Q値をもつ高周波誘電体用焼結体として、Ba
Mg1/3 Ta2/3 3 (=Ba3 MgTa2 9 )であ
らわされるペロブスカイト型高周波誘電体用焼結体(以
下、適宜「BMT焼結体」と言う)がある。
2. Description of the Related Art Conventionally, Ba has been used as a high frequency dielectric sintered body having a high dielectric constant and a high Q value in the microwave region.
There is a perovskite type high frequency dielectric sintered body represented by Mg 1/3 Ta 2/3 O 3 (= Ba 3 MgTa 2 O 9 ) (hereinafter, appropriately referred to as “BMT sintered body”).

【0003】この高周波誘電体用焼結体は、原料配合物
を仮焼して得た仮焼物を本焼成し焼結させることで得ら
れている。しかし、BMT焼結体は、一般に、誘電特性
の良い焼結体を歩留まりよく得ることが困難であるとさ
れている。得られた焼結体の緻密度が低かったり、焼結
体にクラックが入っていたりすることが多いからであ
る。
This high-frequency dielectric sintered body is obtained by calcining a calcined material obtained by calcining a raw material mixture and sintering it. However, it is generally said that it is difficult to obtain a BMT sintered body having a good dielectric property with a high yield. This is because the density of the obtained sintered body is low, and the sintered body often has cracks.

【0004】緻密度を高めるために、本焼成での昇温速
度を100℃/分と急速に上げる方法が提案されている
が、この急速昇温焼成では、焼成コストが高くて電子デ
バイス(例えば、共振器)の低価格化が困難であるた
め、量産に適さず実用性が低い。
In order to increase the compactness, a method has been proposed in which the temperature rising rate in the main firing is rapidly increased to 100 ° C./minute, but in this rapid temperature raising firing, the firing cost is high and an electronic device (for example, , And resonator) are difficult to reduce in price, and thus are not suitable for mass production and are not practical.

【0005】[0005]

【発明が解決しようとする課題】上記事情に鑑み、この
発明は誘電特性の優れた安価な高周波誘電体用焼結体を
容易に製造することのできる方法を提供することを課題
とする。
SUMMARY OF THE INVENTION In view of the above circumstances, it is an object of the present invention to provide a method capable of easily producing an inexpensive high frequency dielectric sintered body having excellent dielectric properties.

【0006】[0006]

【課題を解決するための手段】発明者は、上記課題を解
決するため、BMT焼結体について、様々な方向から検
討し、つぎのようなことを見出した。すなわち、100
0〜1100℃程度で仮焼した仮焼物の粉末を用いた場
合の焼結体には、クラック発生があるために誘電特性は
十分でないが、緻密度は十分である。クラック発生が起
こるのは、仮焼物中に未反応で残るBaCO3 、MgO
およびBaTa2 6 の3者が焼成過程で再反応するか
らと考えた。他方、1300〜1400℃程度で仮焼し
た粉末を焼成して得た焼結体には、クラックの発生はな
いが緻密度で劣るということを見出した。そこで、緻密
度の劣る原因を詳しく検討した結果、仮焼温度が130
0〜1400℃の場合には反応が十分に進んでいるため
にMgOは殆ど残存しないが、仮焼温度1000〜11
00℃の場合にはMgOが残存するためではないか、と
推察したのである。この推察に基づいて、1300℃を
超える温度で十分に焼成したBaMg1/3 Ta2/3 3
であらわされる難焼結性仮焼物に、少量のMgOを積極
的に添加すれば、クラック発生を抑制しつつ、緻密度の
高い焼結体とすることができるのではないかと推定し、
実験によってこの推定の正しいことを確かめた結果、こ
こに、この発明を完成させることができたのである。
In order to solve the above-mentioned problems, the inventor has studied the BMT sintered body from various directions and found the following. That is, 100
The sintered body obtained by using the powder of the calcined product that is calcined at about 0 to 1100 ° C. does not have sufficient dielectric properties because of the occurrence of cracks, but has sufficient compactness. The cracks are generated because BaCO 3 and MgO which remain unreacted in the calcined product.
It was considered that the three members, BaTa 2 O 6 and BaTa 2 O 6 , re-react during the firing process. On the other hand, it has been found that the sintered body obtained by firing the powder calcined at about 1300 to 1400 ° C. does not have cracks but is inferior in compactness. Therefore, as a result of detailed examination of the cause of the poor compactness, the calcination temperature was 130
In the case of 0 to 1400 ° C., MgO hardly remains because the reaction has proceeded sufficiently, but the calcination temperature is 1000 to 11
It was speculated that this may be because MgO remains at a temperature of 00 ° C. Based on this assumption, BaMg 1/3 Ta 2/3 O 3 which has been sufficiently fired at a temperature exceeding 1300 ° C.
It is presumed that if a small amount of MgO is positively added to the hardly-sinterable calcination product represented by the above, it is possible to obtain a sintered compact having a high density while suppressing the occurrence of cracks,
As a result of confirming the correctness of this estimation through experiments, the present invention could be completed here.

【0007】したがって、この発明にかかる誘電体用焼
結体の製造方法は、Ba、Sr、Ba 1-x Sr x (但
し、0<X<1)のうちの何れか1種の元素または元素
団を表すAと、Mg、Zn、Ni、Mnのうちの何れか
1種の元素を表すBと、TaまたはNbの何れか1種の
元素を表すCと、酸素を表すOとの構成比率がAB1/3
2/3 3 であらわされるペロブスカイト型高周波誘電
体用焼結体を得るにあたり、AB1/3 2/3 3 であら
わされる仮焼物にB酸化物を添加して1300℃以上で
焼成する。この発明におけるAB1/3 2/3 3 であら
わされる仮焼物およびB酸化物のA、B、Cは記A、
B、Cの中から適宜選んで組み合される。
Accordingly, the production method of the dielectric-body sintered body according to the present invention, Ba, Sr, Ba 1- x Sr x ( however
And any one of 0 <X <1) or an element
A representing a group and any one of Mg, Zn, Ni, and Mn
B, which represents one element, and one of Ta and Nb
The composition ratio of C representing an element and O representing oxygen is AB 1/3.
In obtaining a perovskite high-frequency dielectric-body sintered body is represented by C 2/3 O 3, in AB 1/3 C 2/3 O 3 added B oxide calcined product represented by and 1300 ° C. or higher < br /> fired. A of precalcination and B oxides represented by AB 1/3 C 2/3 O 3 in the present invention, B, C before Symbol A,
It is appropriately selected from B and C and combined.

【0008】 例えば、BMT焼結体の場合、請求項2の
ように、仮焼物はBaMg1/3 Ta2/3 3 であらわさ
れるものであり、B酸化物はMgOである。
[0008] For example, in the case of a BMT sintered body,
The calcined product is BaMg1/3Ta2/3O3Depiction
The B oxide is MgO.

【0009】仮焼物に加えるB酸化物の添加量は、通
常、請求項3のように、仮焼物1 molに対し、3〜8mo
l %、より好ましくは、4〜6mol%の範囲とする。3
mol%を下回ると緻密度を高める効果が十分でない傾向
がみられ、8 mol%を上回ると却って誘電特性や緻密化
の十分な焼結体が得難くなるからである。なお、ペロブ
スカイト型高周波誘電体用焼結体を得るための仮焼物
と、添加される酸化物の組み合せとしては、上記のBM
Tの場合の他、つぎのようなものも挙げられる。 (a)仮焼物;BaZn1/3 Ta2/3 3 酸化物;Zn
O (b)仮焼物;BaNi1/3 Ta2/3 3 酸化物;Ni
O (c)仮焼物;BaMn1/3 Ta2/3 3 酸化物;Mn
O (d)仮焼物;BaMg1/3 Nb2/3 3 酸化物;Mg
O (e)仮焼物;BaZn1/3 Nb2/3 3 酸化物;Zn
O (f)仮焼物;BaMn1/3 Nb2/3 3 酸化物;Mn
O (g)仮焼物;SrMg1/3 Ta2/3 3 酸化物;Mg
O (h)仮焼物;SrZn1/3 Ta2/3 3 酸化物;Zn
O (i)仮焼物;SrNi1/3 Ta2/3 3 酸化物;Ni
O (j)仮焼物;Ba1-x Srx Mg1/3 Ta2/3 3
化物;MgO (k)仮焼物;Ba1-x Srx Ni1/3 Ta2/3 3
化物;NiO 以下、この発明を、BMT焼結体の場合を例にとって、
具体的に説明する。
The amount of the B oxide added to the calcined product is usually 3 to 8 mol per mol of the calcined product as claimed in claim 3.
1%, more preferably 4 to 6 mol%. Three
If it is less than mol%, the effect of increasing the compactness tends to be insufficient, and if it exceeds 8 mol%, it is rather difficult to obtain a sintered body having sufficient dielectric properties and densification. The combination of the calcined product and the added oxide for obtaining the perovskite-type high frequency dielectric sintered body is BM described above.
In addition to the case of T, the following may be mentioned. (A) Calcined product; BaZn 1/3 Ta 2/3 O 3 oxide; Zn
O (b) Calcined product; BaNi 1/3 Ta 2/3 O 3 oxide; Ni
O (c) calcined product; BaMn 1/3 Ta 2/3 O 3 oxide; Mn
O (d) calcined product; BaMg 1/3 Nb 2/3 O 3 oxide; Mg
O (e) Calcined product; BaZn 1/3 Nb 2/3 O 3 oxide; Zn
O (f) calcined product; BaMn 1/3 Nb 2/3 O 3 oxide; Mn
O (g) calcined product; SrMg 1/3 Ta 2/3 O 3 oxide; Mg
O (h) calcined product; SrZn 1/3 Ta 2/3 O 3 oxide; Zn
O (i) Calcined product; SrNi 1/3 Ta 2/3 O 3 oxide; Ni
O (j) calcined product; Ba 1-x Sr x Mg 1/3 Ta 2/3 O 3 oxide; MgO (k) calcined product; Ba 1-x Sr x Ni 1/3 Ta 2/3 O 3 oxide Material; NiO Hereinafter, the present invention will be described by taking a case of a BMT sintered body as an example.
This will be specifically described.

【0010】 BaMg1/3 Ta2/3 3 の化学量論
比に従って、出発原料BaCO3 、MgOおよびTa2
5 の粉末をそれぞれ計量する。通常、各粉末の平均粒
径は以下の程度である。 BaCO3 粉末…1 〜15μm程度 MgO粉末…1〜15μm程度 Ta25 粉末…1〜15μm程度 BaCO3 の代わりにBaOを用いてもよいが、BaC
3 は高純度で粒径の揃ったものが安価に入手できる。
According to the stoichiometric ratio of BaMg 1/3 Ta 2/3 O 3 , the starting materials BaCO 3 , MgO and Ta 2
Weigh each powder of O 5 . Usually, the average particle size of each powder is as follows. BaCO 3 powder: about 1 to 15 μm MgO powder: about 1 to 15 μm Ta 2 O 5 powder: about 1 to 15 μm BaO may be used instead of BaCO 3 , but BaC
O 3 with high purity and uniform particle size can be obtained at low cost.

【0011】 1000〜1100℃の温度で予備仮
焼を行う。予備仮焼は、後の仮焼や本焼成の際にMgO
が揮発するのを抑えるためである。但し、この予備仮焼
は省いてもよい。 予備仮焼を終えた粉末は、冷却後、純水中で24時
間程度ボール・ミルを用い粉砕し、乾燥してから、13
00〜1400℃の温度で2〜10時間仮焼する。この
仮焼は、2回以上行うことが好ましい。仮焼を繰り返す
ことにより組成の均一性が高まる。更に、一回の仮焼毎
に仮焼物を粉砕し攪拌するようにする。この仮焼物は、
BaMg1/3 Ta2/33 であらわされるものとなって
いる。最終仮焼処理の後で粉砕して得た粉末の平均粒径
は、1〜15μm程度である。
Pre-calcination is performed at a temperature of 1000 to 1100 ° C. The preliminary calcination is MgO during the subsequent calcination or main calcination.
This is to suppress the volatilization of the. However, this preliminary calcination may be omitted. The powder that has undergone the preliminary calcination is cooled, ground in pure water for about 24 hours using a ball mill, dried and then dried.
Calcination is performed at a temperature of 00 to 1400 ° C. for 2 to 10 hours. This calcination is preferably performed twice or more. By repeating the calcination, the uniformity of the composition is enhanced. Further, the calcinated product is crushed and stirred for each calcination. This calcined product
It is represented by BaMg 1/3 Ta 2/3 O 3 . The average particle size of the powder obtained by crushing after the final calcination treatment is about 1 to 15 μm.

【0012】仮焼工程での反応は下記の通りである。The reaction in the calcining step is as follows.

【化1】 である。 得られた仮焼物の粉末1mol に対してMgO粉末
を、αmol%(但し、0<α≦8の範囲)添加し、加圧
成形により所定形状の圧粉体にする。添加するMgO粉
末の平均粒径は、1〜15μm程度である。
Embedded image Is. MgO powder is added in an amount of α mol% (provided that 0 <α ≦ 8) to 1 mol of the obtained calcined powder, and the mixture is pressed to obtain a green compact having a predetermined shape. The average particle size of the added MgO powder is about 1 to 15 μm.

【0013】MgOは、通常、単独で用いられるが、他
の酸化物、例えば、BaTa2 6 をも含めてもよい。
このように、1300℃以上の温度で仮焼したものに原
料のひとつであるMgOを少量添加するだけですむた
め、極めて容易かつ安価に製造できるのである。仮焼温
度は、1300℃以上であることが望ましい。これは、
原料同士の反応が十分に進み仮焼物中に緻密化を阻害す
る未反応原料物が残留することを抑えられるからであ
る。特に、仮焼物のX線回折分析における回折線(10
・2)、(20・2)、(21・2)、(20・4)お
よび(21・4)の半値幅が、それぞれ、0.20°、
0.22°、0.29°、0.33°および0.36°
以下となるように仮焼されたものは組成の均一性が高く
Q値が十分となる傾向にある。
MgO is usually used alone, but may include other oxides such as BaTa 2 O 6 .
As described above, since it is only necessary to add a small amount of MgO, which is one of the raw materials, to a product that has been calcined at a temperature of 1300 ° C. or higher, it is possible to manufacture it extremely easily and inexpensively. The calcination temperature is preferably 1300 ° C. or higher. this is,
This is because the reaction between the raw materials is sufficiently promoted, and it is possible to prevent the unreacted raw materials that inhibit the densification from remaining in the calcined product. In particular, the diffraction line (10
.2), (20.2), (21.2), (20.4) and (21.4) half-widths of 0.20 °,
0.22 °, 0.29 °, 0.33 ° and 0.36 °
Those calcined as described below tend to have a high compositional uniformity and a sufficient Q value.

【0014】 この後、本焼成を行う。 (1) 1500℃以上の温度で2〜5時間焼成する。
昇温速度には特に制限はない。この(1)の焼成は、緻
密化を進行させるためのものである。ついで、 (2) 1200〜1450℃で10〜120時間熱処
理する。この(2)の処理は、BMT結晶を理想的な六
方晶とするためになされる。
After that, main firing is performed. (1) Baking is performed at a temperature of 1500 ° C. or higher for 2 to 5 hours.
There is no particular limitation on the heating rate. The firing of (1) is for promoting densification. Then, (2) heat treatment is performed at 1200 to 1450 ° C. for 10 to 120 hours. This treatment (2) is performed to make the BMT crystal an ideal hexagonal crystal.

【0015】これにより、優れたBMT焼結体が容易に
得られるようになる。
As a result, an excellent BMT sintered body can be easily obtained.

【0016】[0016]

【作用】この発明では、本焼成において添加されるB酸
化物は、AB1/32/3 3 であらわされる仮焼物に対
し焼結を促す作用を発揮するため、クラックのない緻密
な焼結体が確実に(歩留まりよく)得られる。少量添加
するB酸化物は、通常、仮焼物を作る際の原料であって
格別なものではなく、また、急速昇温焼成などの特殊な
処理の必要もないので、製造は容易であってコスト高を
招来するようなこともない。
In the present invention, the B oxide added in the main calcination exhibits a function of promoting the sintering of the calcined product represented by AB 1/3 C 2/3 O 3 and therefore has a dense and crack-free structure. A sintered body can be obtained reliably (with high yield). B oxide, which is added in a small amount, is usually a raw material when making a calcined product and is not special, and it does not require any special treatment such as rapid temperature rising calcination, so it is easy to manufacture and the cost is low. There is no such thing as a high.

【0017】ペロブスカイト型高周波誘電体用焼結体が
BaMg1/3 Ta2/3 3 であらわされるものである場
合は、他の組成のものの場合に比べ、誘電特性の優れた
ものが得やすい。B酸化物の添加量がAB1/3 2/3
3 であらわされる仮焼物1mol に対し3〜8mol %であ
る場合には、適切な焼結促進作用が確実にあらわれる。
When the sintered body for perovskite type high frequency dielectric is represented by BaMg 1/3 Ta 2/3 O 3 , it is easy to obtain one having excellent dielectric characteristics as compared with the case of using other compositions. . The amount of B oxide added is AB 1/3 C 2/3 O
When the content is 3 to 8 mol% with respect to 1 mol of the calcined product represented by 3 , an appropriate sintering promoting action is certainly exhibited.

【0018】[0018]

【実施例】以下、この発明の実施例を説明する。 −実施例1〜5− 上記〜に従って、BMT焼結体を得た。但し、仮焼
物1mol に対するMgOの添加割合は、表1の通りとし
た。
Embodiments of the present invention will be described below. -Examples 1 to 5-BMT sintered bodies were obtained according to the above. However, the addition ratio of MgO to 1 mol of the calcined product is as shown in Table 1.

【0019】なお、予備仮焼工程では、1100℃、
10時間の処理を行い、仮焼工程では、1300℃、
10時間の処理を2回行い、本焼成の(1)焼成工程
では、1600℃、2時間の焼成を行い、(2)焼成工
程では、1450℃、100時間の処理を行った。な
お、原料粉末の平均粒径は、BaCO3粉末が約4μ
m、MgO粉末が約4μm、Ta2 5 粉末が約4μm
である。
In the preliminary calcination step, 1100 ° C.
After the treatment for 10 hours, in the calcination step, 1300 ° C,
The treatment for 10 hours was performed twice, the firing was performed at 1600 ° C. for 2 hours in the firing step (1) of the main firing, and the treatment at 1450 ° C. for 100 hours was performed in the firing step (2). The average particle size of the raw material powder is about 4 μm for BaCO 3 powder.
m, MgO powder is about 4 μm, Ta 2 O 5 powder is about 4 μm
Is.

【0020】粉砕後における仮焼物の粉末の平均粒径は
約4μmであり、添加するMgO粉末の平均粒径も約4
μmである。 −比較例1− 実施例1において、MgOを添加しなかった他は、同様
にしてBMT焼結体を得た。
The average particle size of the powder of the calcined product after pulverization is about 4 μm, and the average particle size of the MgO powder added is also about 4 μm.
μm. -Comparative Example 1-A BMT sintered body was obtained in the same manner as in Example 1 except that MgO was not added.

【0021】−比較例2− 仮焼温度が1100℃である他は比較例1と同様にし
て、BMT焼結体を得た。実施例および比較例の焼結体
について、緻密度(焼結体の相対密度)を測定するとと
もに、誘電率とQ値を誘電体円柱共振法により測定(測
定周波数10G Hz)した。また、クラックの有無につ
いても調べた。測定結果を表1に示す。
-Comparative Example 2-A BMT sintered body was obtained in the same manner as in Comparative Example 1 except that the calcination temperature was 1100 ° C. With respect to the sintered bodies of Examples and Comparative Examples, the density (relative density of the sintered body) was measured, and the dielectric constant and the Q value were measured by the dielectric cylinder resonance method (measurement frequency 10 GHz). The presence or absence of cracks was also examined. Table 1 shows the measurement results.

【0022】[0022]

【表1】 [Table 1]

【0023】表1の実施例の各焼結体と比較例1、2の
焼結体と比べれば、実施例の焼結体は、緻密であり、ク
ラックもなく、十分に実用に足る誘電特性をもつ誘電体
であることが分かる。
Comparing each sintered body of the examples of Table 1 with the sintered bodies of Comparative Examples 1 and 2, the sintered bodies of the examples are dense, have no cracks, and have sufficiently good dielectric properties for practical use. It can be seen that it is a dielectric with.

【0024】[0024]

【発明の効果】以上に述べたように、請求項1〜3記載
の発明では、AB1/3 2/3 3 であらわされる仮焼物
に焼結促進作用をもつB酸化物を微量添加すればよいだ
けであるため、優れた高周波誘電特性の安価な焼結体を
容易に得ることができる。請求項2記載の発明では、ペ
ロブスカイト型高周波誘電体用焼結体の組成がBaMg
1/3 Ta2/3 3 であるため、誘電特性が顕著に優れて
おり、より実用性が高い。
As described above, in the inventions described in claims 1 to 3 , a small amount of B oxide having a sintering promoting action is added to the calcined product represented by AB 1/3 C 2/3 O 3. Since it is only necessary to do so, it is possible to easily obtain an inexpensive sintered body having excellent high frequency dielectric characteristics. In the invention of claim 2, the composition of the sintered body for perovskite type high frequency dielectric is BaMg.
Since it is 1/3 Ta 2/3 O 3 , the dielectric properties are remarkably excellent and the practicability is high.

【0025】請求項3記載の発明では、B酸化物の添加
量が3〜8 mol%であるため、適切な焼結促進作用が確
実にあらわれる。
According to the third aspect of the invention, since the added amount of the B oxide is 3 to 8 mol%, an appropriate sintering promoting action surely appears.

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】 Ba、Sr、Ba 1-x Sr x (但し、0
<X<1)のうちの何れか1種の元素または元素団を表
すAと、Mg、Zn、Ni、Mnのうちの何れか1種の
元素を表すBと、TaまたはNbの何れか1種の元素を
表すCと、酸素を表すOとの構成比率がAB1/3 2/3
3 であらわされるペロブスカイト型高周波誘電体用焼
結体を得るにあたり、AB1/3 2/3 3 であらわされ
る仮焼物にB酸化物を添加して1300℃以上で焼成す
るようにすることを特徴とする高周波誘電体用焼結体の
製造方法。
1. Ba, Sr, Ba 1-x Sr x (provided that 0
Represents any one element or element group of <X <1)
A and any one of Mg, Zn, Ni, Mn
B, which represents an element, and one of Ta and Nb,
The composition ratio of C representing O and O representing oxygen is AB 1/3 C 2/3
In obtaining a perovskite high-frequency dielectric-body sintered body represented by O 3, so that firing at AB 1/3 C 2/3 O 3 added B oxide calcined product represented by and 1300 ° C. or higher A method for producing a sintered body for a high frequency dielectric, comprising:
【請求項2】 仮焼物がBaMg1/3 Ta2/3 3 であ
らわされるものであり、添加酸化物がMgOである請求
項1記載の高周波誘電体用焼結体の製造方法。
2. The method for producing a sintered body for a high frequency dielectric according to claim 1, wherein the calcined material is represented by BaMg 1/3 Ta 2/3 O 3 , and the added oxide is MgO.
【請求項3】 AB1/3 2/3 3 であらわされる仮焼
物1mol に対しB酸化物を3〜8mol %の割合で添加す
るようにする請求項1または2記載の高周波誘電体用焼
結体の製造方法。
3. The high frequency dielectric material according to claim 1, wherein the B oxide is added in a proportion of 3 to 8 mol% to 1 mol of the calcined product represented by AB 1/3 C 2/3 O 3 . Manufacturing method of sintered body.
JP2404558A 1990-12-20 1990-12-20 Method for manufacturing sintered body for high frequency dielectric Expired - Lifetime JPH0817053B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2404558A JPH0817053B2 (en) 1990-12-20 1990-12-20 Method for manufacturing sintered body for high frequency dielectric

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2404558A JPH0817053B2 (en) 1990-12-20 1990-12-20 Method for manufacturing sintered body for high frequency dielectric

Publications (2)

Publication Number Publication Date
JPH04220905A JPH04220905A (en) 1992-08-11
JPH0817053B2 true JPH0817053B2 (en) 1996-02-21

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ID=18514219

Family Applications (1)

Application Number Title Priority Date Filing Date
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Country Status (1)

Country Link
JP (1) JPH0817053B2 (en)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100487204B1 (en) * 2001-08-30 2005-05-03 (주)에어링크테크놀로지 Microwave dielectric ceramic composition and method for manufacturing the same
CN110407579B (en) * 2018-04-28 2021-04-16 中国科学院上海硅酸盐研究所 A kind of microwave dielectric material with ultra-high Q value and preparation method thereof
CN110483042B (en) * 2018-05-15 2021-11-02 中国科学院上海硅酸盐研究所 A new type of single-phase microwave dielectric ceramic material and its preparation method
CN109437899A (en) * 2018-12-20 2019-03-08 中国科学院上海硅酸盐研究所 A kind of microwave medium ceramic material with ultrahigh Q-value and preparation method thereof

Also Published As

Publication number Publication date
JPH04220905A (en) 1992-08-11

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