JPH0825818B2 - Anodic bonding method - Google Patents
Anodic bonding methodInfo
- Publication number
- JPH0825818B2 JPH0825818B2 JP22150092A JP22150092A JPH0825818B2 JP H0825818 B2 JPH0825818 B2 JP H0825818B2 JP 22150092 A JP22150092 A JP 22150092A JP 22150092 A JP22150092 A JP 22150092A JP H0825818 B2 JPH0825818 B2 JP H0825818B2
- Authority
- JP
- Japan
- Prior art keywords
- insulating material
- anodic bonding
- liquid electrode
- cathode
- bonding method
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000000034 method Methods 0.000 title claims description 11
- 239000011810 insulating material Substances 0.000 claims description 22
- 239000007788 liquid Substances 0.000 claims description 19
- 150000001447 alkali salts Chemical class 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000003139 buffering effect Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000012784 inorganic fiber Substances 0.000 description 1
- 239000012774 insulation material Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- -1 whiskers Substances 0.000 description 1
Landscapes
- Formation Of Insulating Films (AREA)
- Measuring Fluid Pressure (AREA)
- Ceramic Products (AREA)
- Joining Of Glass To Other Materials (AREA)
Description
【０００１】[0001]
【産業上の利用分野】本発明は、セラミックスやガラス
等の絶縁材の表面に金属やシリコン等を接合するために
使用される陽極接合方法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an anodic bonding method used for bonding metal, silicon or the like to the surface of an insulating material such as ceramics or glass.
【０００２】[0002]
【従来の技術】半導体圧力センサー等の製造工程におい
ては、ガラス等の絶縁材の表面にシリコンウエハーを接
合するために陽極接合が行われている。この陽極接合方
法は、本出願人の出願に係る特開昭63-229864 号公報、
特開昭63-229865 号公報等に示されているように、絶縁
材の片面に陽極を接触させ、その反対面に陰極を接触さ
せて直流電流を通電し、絶縁材と陽極とを接合させる方
法である。そして陰極側には主として金属板が使用され
ており、金属板と絶縁材との間に液体電極となる液体を
供給しつつ陽極接合を行っていた。2. Description of the Related Art In the manufacturing process of semiconductor pressure sensors and the like, anodic bonding is performed to bond a silicon wafer to the surface of an insulating material such as glass. This anodic bonding method is disclosed in Japanese Patent Application Laid-Open No. 63-229864 disclosed by the applicant.
As disclosed in Japanese Patent Laid-Open No. 63-229865, an anode is brought into contact with one surface of an insulating material, and a cathode is brought into contact with the opposite surface of the insulating material, and a direct current is applied to join the insulating material and the anode. Is the way. A metal plate is mainly used on the cathode side, and anodic bonding is performed while supplying a liquid serving as a liquid electrode between the metal plate and the insulating material.
【０００３】この場合、絶縁体の表面への液体電極の拡
散に応じて陽極接合が進行するので、液体電極の供給量
を厳密にコントロールする必要がある。しかし、金属板
は保水性がゼロであるため、わずかな供給量の変動によ
っても絶縁体の表面への液体電極の拡散状況が変化して
しまい、作業性の低下や漏電による安全性の低下などの
問題があった。In this case, since the anodic bonding progresses according to the diffusion of the liquid electrode to the surface of the insulator, it is necessary to strictly control the supply amount of the liquid electrode. However, since the metal plate has zero water retention, even a slight change in the supply amount changes the diffusion state of the liquid electrode on the surface of the insulator, resulting in reduced workability and reduced safety due to electrical leakage. There was a problem.
【０００４】[0004]
【発明が解決しようとする課題】本発明は上記した従来
の問題点を解決して、絶縁体の陰極側に供給される液体
電極の供給量が多少変動しても安定して陽極接合を進行
させることができ、作業性及び安全性の向上を期するこ
とができる陽極接合方法を提供するために完成されたも
のである。SUMMARY OF THE INVENTION The present invention solves the above-mentioned problems of the prior art, and allows anodic bonding to proceed stably even if the supply amount of the liquid electrode supplied to the cathode side of the insulator fluctuates to some extent. The present invention has been completed in order to provide an anodic bonding method capable of improving workability and safety.
【０００５】[0005]
【課題を解決するための手段】上記の課題を解決するた
めになされた本発明の陽極接合方法は、絶縁材の片面に
陽極を接触させ、その反対面に陰極を接触させて直流電
流を通電し、絶縁材と陽極とを接合させる陽極接合方法
において、陰極側に多孔質板を使用し、この多孔質板に
液体電極をしみ込ませつつ通電することを特徴とするも
のである。The anodic bonding method of the present invention, which has been made to solve the above-mentioned problems, provides an anode with one surface of an insulating material and a cathode with the other surface of the insulating material to apply a direct current. Then, in the anodic bonding method of bonding the insulating material and the anode, a porous plate is used on the cathode side.
The present invention is characterized in that the liquid electrode is soaked with electricity while being energized .
【０００６】[0006]
【実施例】以下に本発明を図示の実施例によって更に詳
細に説明する。図中、１はガラスやセラミックスのよう
な絶縁材、２は絶縁材１の片面に接触させた陽極であ
る。半導体圧力センサーの場合には絶縁材１はガラスで
あり、陽極２はシリコンウエハーである。３は絶縁材１
の反対面に接触させた陰極であり、本発明ではこの陰極
３として多孔質板を使用している。この多孔質板は、液
体電極として使用されるアルカリ塩と反応しないこと、
接合温度以上の耐熱性があること、所定の大きさに加工
し易いことなどの条件を満たすものであることが必要
で、実施例では無機繊維（クロス、ウイスカー、ファイ
バー）を板状としたものが使用されている。The present invention will be described below in more detail with reference to the illustrated embodiments. In the figure, 1 is an insulating material such as glass or ceramics, and 2 is an anode in contact with one surface of the insulating material 1. In the case of a semiconductor pressure sensor, the insulating material 1 is glass and the anode 2 is a silicon wafer. 3 is insulation material 1
In this invention, a porous plate is used as the cathode 3. This porous plate does not react with the alkali salt used as the liquid electrode,
It is necessary to meet the conditions such as heat resistance above the bonding temperature and that it can be easily processed to a prescribed size. In the examples, inorganic fibers (cloth, whiskers, fibers) are made into a plate shape. Is used.
【０００７】多孔質板の中央部には液体電極供給口４が
形成されており、ここからアルカリ塩のような液体電極
が供給される。また陽極２と陰極３はリード線５、６に
よって直流電源７に接続され、200 〜2000Ｖ程度の直流
電圧が印加される。８は絶縁材１の周囲に設けられたヒ
ーターであり、絶縁材１を300 〜400 ℃に加熱してい
る。A liquid electrode supply port 4 is formed in the center of the porous plate, and a liquid electrode such as an alkali salt is supplied from this port. The anode 2 and the cathode 3 are connected to a DC power source 7 by lead wires 5 and 6, and a DC voltage of about 200 to 2000 V is applied. A heater 8 is provided around the insulating material 1 and heats the insulating material 1 to 300 to 400 ° C.
【０００８】接合に当たっては、まずヒーター８により
絶縁材１を300 〜400 ℃に加熱し、液体電極供給口４か
ら陰極３である多孔質板の中心部の表面に液体電極とな
るアルカリ塩を溶融状態で供給すると同時に、直流電源
７から陽極２と陰極３に直流電圧を印加する。すると液
体電極は多孔質板にしみ込み、絶縁材１の表面に拡散し
た部分から陽極接合が始まり、液体電極の拡散に連れて
接合部分は次第に外周に向かって広がっていく。In joining, first, the insulating material 1 is heated to 300 to 400 ° C. by the heater 8 and the alkali salt serving as the liquid electrode is melted from the liquid electrode supply port 4 to the surface of the central portion of the porous plate which is the cathode 3. At the same time as supplying in this state, a DC voltage is applied from the DC power supply 7 to the anode 2 and the cathode 3. Then, the liquid electrode soaks into the porous plate, and anodic bonding starts from the portion diffused on the surface of the insulating material 1, and the joined portion gradually expands toward the outer periphery as the liquid electrode diffuses.
【０００９】このとき、本発明では液体電極となるアル
カリ塩は多孔質板にしみ込んだうえで絶縁材１の表面に
拡散するから、その供給量が多少変動した場合にも多孔
質板が緩衝効果を発揮し、接合の進行に直接的な変動を
及ぼすことがない。また液体電極の供給量が過剰となっ
ても、液体電極が溢れて短絡事故を引き起こすことがな
く、安全である。なお、上記の実施例では陰極３を絶縁
材１の下側に配置したが、上下を逆としても差支えはな
い。At this time, in the present invention, since the alkali salt serving as the liquid electrode permeates the porous plate and diffuses on the surface of the insulating material 1, the porous plate also has a buffering effect even when the supply amount thereof changes a little. And does not directly affect the progress of joining. Further, even if the supply amount of the liquid electrode becomes excessive, the liquid electrode does not overflow and causes a short circuit accident, which is safe. In addition, although the cathode 3 is arranged below the insulating material 1 in the above-mentioned embodiment, there is no problem even if the cathode 3 is turned upside down.
【００１０】[0010]
【発明の効果】以上に説明したように、本発明の陽極接
合方法は陰極として多孔質板を使用することにより、液
体電極の供給量が多少変動しても安定して陽極接合を進
行させることができ、作業性及び安全性の向上を期する
ことができるものであるから、従来の問題点を解決した
陽極接合方法として、産業の発展に寄与するところは極
めて大きいものである。As described above, in the anodic bonding method of the present invention, the porous plate is used as the cathode so that the anodic bonding can be stably proceeded even if the supply amount of the liquid electrode is slightly changed. Therefore, it is possible to improve workability and safety, and therefore, as an anodic bonding method that solves the conventional problems, it greatly contributes to industrial development.
【図１】本発明の陽極接合方法を説明する断面図であ
る。FIG. 1 is a cross-sectional view illustrating an anodic bonding method of the present invention.
１ 絶縁材 ２ 陽極 ３ 陰極となる多孔質板 1 Insulating material 2 Anode 3 Porous plate that becomes cathode
Claims (1)
対面に陰極を接触させて直流電流を通電し、絶縁材と陽
極とを接合させる陽極接合方法において、陰極側に多孔
質板を使用し、この多孔質板に液体電極をしみ込ませつ
つ通電することを特徴とする陽極接合方法。1. In an anodic bonding method in which an anode is brought into contact with one surface of an insulating material and a cathode is brought into contact with the opposite surface of the insulating material to apply a direct current to the insulating material to join the anode, a porous plate is provided on the cathode side. Use and allow the liquid electrode to soak into this porous plate.
A method for anodic bonding, characterized in that two electric currents are applied.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22150092A JPH0825818B2 (en) | 1992-08-20 | 1992-08-20 | Anodic bonding method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22150092A JPH0825818B2 (en) | 1992-08-20 | 1992-08-20 | Anodic bonding method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0664978A JPH0664978A (en) | 1994-03-08 |
| JPH0825818B2 true JPH0825818B2 (en) | 1996-03-13 |
Family
ID=16767687
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP22150092A Expired - Lifetime JPH0825818B2 (en) | 1992-08-20 | 1992-08-20 | Anodic bonding method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0825818B2 (en) |
-
1992
- 1992-08-20 JP JP22150092A patent/JPH0825818B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0664978A (en) | 1994-03-08 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4983197A (en) | Method for producing waveguides in a glass substrate by ion exchange | |
| JPH0825818B2 (en) | Anodic bonding method | |
| US3870850A (en) | Method of connecting electrically conducting bodies | |
| JP2870822B2 (en) | Bonding method between silicon and glass | |
| JP2519635B2 (en) | Anodic bonding method | |
| JP3824681B2 (en) | Anodic bonding equipment | |
| JP3753524B2 (en) | Manufacturing method of electronic parts | |
| JPH02141442A (en) | Method for anodically bonding silicon wafer and glass substrate | |
| JP2706726B2 (en) | Electric joining method of ceramics | |
| JPH0577305B2 (en) | ||
| JP2624832B2 (en) | Anodic bonding equipment | |
| JPH07209096A (en) | Platinum temperature sensor and manufacture thereof | |
| JPH0276237A (en) | Anode junction of silicon wafer and glass substrate | |
| JPH07105505B2 (en) | Anodic bonding method | |
| JPS63229865A (en) | Anodic bonding method | |
| JPS634959Y2 (en) | ||
| JPS63197345A (en) | Die-bonding method for semiconductor element | |
| JPH0479272A (en) | Anode junction apparatus | |
| JPS5693337A (en) | Semiconductor device | |
| JPS6214098B2 (en) | ||
| JPS6213042Y2 (en) | ||
| JPH04148526A (en) | Manufacture of silicon substrate | |
| JPH0450646A (en) | Limiting-current type oxygen sensor | |
| JPH07107527B2 (en) | Oxygen sensor | |
| JPH01239857A (en) | Wire bonding |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 19960827 |