JPH0577305B2 - - Google Patents
Info
- Publication number
- JPH0577305B2 JPH0577305B2 JP6487887A JP6487887A JPH0577305B2 JP H0577305 B2 JPH0577305 B2 JP H0577305B2 JP 6487887 A JP6487887 A JP 6487887A JP 6487887 A JP6487887 A JP 6487887A JP H0577305 B2 JPH0577305 B2 JP H0577305B2
- Authority
- JP
- Japan
- Prior art keywords
- bonding
- anode
- insulating material
- voltage
- cathode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000011810 insulating material Substances 0.000 claims description 23
- 238000000034 method Methods 0.000 claims description 11
- 239000011521 glass Substances 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- -1 Li + Chemical class 0.000 description 1
- 239000010405 anode material Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
Landscapes
- Measuring Fluid Pressure (AREA)
- Ceramic Products (AREA)
- Joining Of Glass To Other Materials (AREA)
- Pressure Sensors (AREA)
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明はセラミツクス、ガラスのような絶縁材
の表面に、金属やシリコン等を接合するために利
用される陽極接合方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to an anodic bonding method used for bonding metal, silicon, etc. to the surface of an insulating material such as ceramics or glass.
（従来の技術）
例えば半導体圧力センサー等の製造工程におい
ては、ガラス等の絶縁材の表面にシリコンウエハ
ー等を接合するために陽極接合が行われている。
この陽極接合法は米国特許第3397278号明細書等
にも示されているとおり、ガラス等の絶縁材の片
面に接合しようとする金属やシリコンウエハー等
を陽極として接触させるとともに、絶縁材の反対
側の表面に金属製の陰極を接触させ、300〜400℃
の温度条件下で直流電圧を印加することにより陽
極と絶縁材とを接合させる方法である。ところが
陽極と絶縁材との接合面をいかに平滑に研摩して
も全面が同時に密着するものではなく、両者間の
通電はいくつかの接触点から開始されるので、ウ
エハー状の広い面積の陽極を絶縁体に接合する場
合には接合面に分散した複数箇所から接合が始ま
り順次その周囲に接合部が拡大して行くこととな
り、これらの接合部間に最後まで残された接合界
面部分に気泡が閉じ込められるという問題があつ
た。このような気泡は接合の進行につれて圧縮さ
れ、場合によつては陽極や絶縁材を破壊する程の
歪を生ずることがあつた。(Prior Art) For example, in the manufacturing process of semiconductor pressure sensors and the like, anodic bonding is performed to bond a silicon wafer or the like to the surface of an insulating material such as glass.
As shown in U.S. Patent No. 3,397,278, etc., this anodic bonding method involves contacting the metal or silicon wafer to be bonded to one side of an insulating material such as glass as an anode, and the other side of the insulating material. A metal cathode is brought into contact with the surface of the
This is a method of bonding an anode and an insulating material by applying a DC voltage under a temperature condition of . However, no matter how smooth the bonding surface between the anode and the insulating material is polished, the entire surface will not be in close contact with each other at the same time, and current conduction between the two starts from several contact points, so it is difficult to use an anode with a large wafer-like area. When bonding to an insulator, the bond starts from multiple locations distributed on the bonding surface and the bond gradually expands around the bonded area, causing air bubbles to form at the bonding interface that remains between these bonded areas until the end. There was a problem with being locked up. These bubbles are compressed as the bonding progresses, and in some cases may cause enough strain to destroy the anode or insulating material.
（発明が解決しようとする問題点）
本発明は上記のような従来の問題点を解決し、
ウエハー状の広い面積を持つ陽極を絶縁材に接合
する場合にも接合面に気泡を生ずることのない陽
極接合方法を目的として完成されたものである。(Problems to be solved by the invention) The present invention solves the conventional problems as described above,
This method was developed with the aim of creating an anodic bonding method that does not generate bubbles on the bonding surface even when bonding a wafer-like anode with a large area to an insulating material.
（問題点を解決するための手段）
本発明は絶縁材の両表面に陽極と陰極とを接触
させ直流電圧を印加して絶縁材と陽極とを接合さ
せる陽極接合方法において、陰極を同心円状の多
数の環状電極により構成し、その中心側から順次
電圧を印加することにより陽極と絶縁材との接合
界面を中心から外側に向つて移動させつつ接合を
行わせることを特徴とするものである。(Means for Solving the Problems) The present invention is an anodic bonding method in which an anode and a cathode are brought into contact with both surfaces of an insulating material and a DC voltage is applied to bond the insulating material and the anode. It is characterized by being composed of a large number of annular electrodes, and by sequentially applying voltage from the center side, the bonding interface between the anode and the insulating material is moved outward from the center to perform bonding.
（実施例）
次に本発明を図示の実施例によつて更に詳細に
説明すると、１はガラス、セラミツクスのような
絶縁材であり、２は絶縁材１の片面に接触させた
陽極である。半導体圧力センサーの製造の場合に
おいては絶縁材１はガラス、陰極２はシリコンウ
エハーであり、陽極２はリード線３を介して200
〜2000V程度の直流電源４のプラス側に接続され
ている。５は絶縁材１の反対側の表面に接触させ
た陰極であるが、本発明においては第２図にも示
されるように、陰極５は導電性材料からなる同心
円状の多数の独立した環状電極５ａ〜５ｅにより
構成されており、各環状電極５ａ〜５ｅはスイツ
チ６ａ〜６ｅを介して直流電源４のマイナス側に
接続されている。なお７は全体300〜400℃程度に
加熱するためのヒーターである。(Embodiments) Next, the present invention will be explained in more detail with reference to the illustrated embodiments. Reference numeral 1 is an insulating material such as glass or ceramics, and 2 is an anode that is in contact with one side of the insulating material 1. In the case of manufacturing a semiconductor pressure sensor, the insulating material 1 is glass, the cathode 2 is a silicon wafer, and the anode 2 is connected to the
It is connected to the positive side of the DC power supply 4 of ~2000V. Reference numeral 5 denotes a cathode which is brought into contact with the opposite surface of the insulating material 1. In the present invention, as shown in FIG. The annular electrodes 5a to 5e are connected to the negative side of the DC power source 4 via switches 6a to 6e. Note that 7 is a heater for heating the whole to about 300 to 400°C.
本発明の方法により陽極接合を行うには、全体
を300〜400℃程度に加熱したうえ、まずスイツチ
６ａを入れて多数の環状電極のうち最も中心側の
環状電極５ａに通電する。この結果、絶縁材１の
中心部分のみに直流電圧が印加され、この部分の
絶縁材１の内部でLi+、Na+、K+等の正イオンが
陰極５側を向き、O2-等の負イオンが陽極２側を
向く分極現象が生じて、このO2-イオンが陽極２
の例えばSi+イオンと化学結合し、絶縁材１の中
心部において陽極２が接合される。次にスイツチ
６ａをオンとしまま、スイツチ６ｂをオンとして
２番目の環状電極５ｂに直流電圧を印加すれば、
最初に陽極接合が行われた外側の部分で同様に陽
極接合が行われる。このようにして中心側の環状
電極５ａから外側の環状電極５ｅに向つて順次直
流電圧を印加して外側に向つて陽極接合を進行さ
せれば、接合界面が次第に外側に向つて移動しつ
つ全体の接合が行われるので、接合界面に囲まれ
た部分が生ずるおそれがない。このため本発明に
よれば接合面に気泡を生ずることなく陽極接合を
行うことができる。 To perform anodic bonding by the method of the present invention, the whole is heated to about 300 to 400 DEG C., and then a switch 6a is turned on to energize the annular electrode 5a closest to the center among the many annular electrodes. As a result, a DC voltage is applied only to the central part of the insulating material 1, and inside this part of the insulating material 1, positive ions such as Li + , Na + , K +, etc. face the cathode 5 side, and O 2- , etc. A polarization phenomenon occurs in which negative ions face the anode 2, and these O 2- ions move toward the anode 2.
For example, the anode 2 is chemically bonded with, for example, Si + ions, and the anode 2 is bonded to the center of the insulating material 1. Next, while keeping the switch 6a on, turn on the switch 6b and apply a DC voltage to the second annular electrode 5b.
Anodic bonding is similarly performed on the outer portion where anodic bonding was first performed. In this way, if the DC voltage is sequentially applied from the center-side annular electrode 5a to the outer annular electrode 5e and the anodic bonding progresses outward, the bonding interface will gradually move outward and the entire Since the bonding is performed, there is no possibility that a portion surrounded by the bonding interface will be formed. Therefore, according to the present invention, anodic bonding can be performed without producing bubbles on the bonding surfaces.
（発明の効果）
本発明は以上の説明からも明らかなように、同
心円状の多数の環状電極のうちの中心側から順次
電圧を印加することにより接合界面を中心から外
側に向つて移動させつつ接合を行わせることがで
きるので、接合面に気泡を生ずるおそれなく陰極
接合を完了することができる。従つて本発明はウ
エハー状の広い面積の陽極を絶縁材に接合するの
に特に好適なものである。よつて本発明は従来の
問題点を解決した陽極接合方法として、業界に寄
与するところは極めて大きいものである。(Effects of the Invention) As is clear from the above description, the present invention applies voltage sequentially from the center of a large number of concentric annular electrodes, thereby moving the bonding interface outward from the center. Since the bonding can be performed, the cathodic bonding can be completed without the risk of creating bubbles on the bonding surface. Therefore, the present invention is particularly suitable for bonding a wafer-like, large-area anode to an insulating material. Therefore, the present invention makes an extremely large contribution to the industry as an anodic bonding method that solves the conventional problems.
第１図は本発明の陽極接合方法を説明する断面
図、第２図はその底面図である。
１：絶縁材、２：陽極、５：陰極、５ａ〜５
ｅ：環状電極。
FIG. 1 is a sectional view illustrating the anodic bonding method of the present invention, and FIG. 2 is a bottom view thereof. 1: Insulating material, 2: Anode, 5: Cathode, 5a-5
e: Annular electrode.
Claims (1)
させ直流電圧を印加して絶縁材１と陽極２とを接
合させる陽極接合方法において、陰極５を同心円
状に多数の環状電極５ａ〜５ｅにより構成し、そ
の中心側から順次電圧を印加することにより陽極
２と絶縁材１との接合界面を中心から外側に向つ
て移動させつつ接合を行わせることを特徴とする
陽極接合方法。1 In the anodic bonding method in which the anode 2 and the cathode 5 are brought into contact with both surfaces of the insulating material 1 and a DC voltage is applied to join the insulating material 1 and the anode 2, the cathode 5 is concentrically connected to a large number of annular electrodes 5a to 5. 5e, and the anode bonding method is characterized in that the bonding interface between the anode 2 and the insulating material 1 is moved outward from the center by sequentially applying a voltage from the center side to perform the bonding.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6487887A JPS63229863A (en) | 1987-03-19 | 1987-03-19 | Anodic bonding method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6487887A JPS63229863A (en) | 1987-03-19 | 1987-03-19 | Anodic bonding method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63229863A JPS63229863A (en) | 1988-09-26 |
| JPH0577305B2 true JPH0577305B2 (en) | 1993-10-26 |
Family
ID=13270818
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6487887A Granted JPS63229863A (en) | 1987-03-19 | 1987-03-19 | Anodic bonding method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63229863A (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07112939B2 (en) * | 1988-11-21 | 1995-12-06 | 三菱電機株式会社 | Anodic bonding method of silicon wafer and glass substrate |
| JP2624832B2 (en) * | 1989-06-01 | 1997-06-25 | 株式会社東芝 | Anodic bonding equipment |
| JP2653008B2 (en) * | 1993-01-25 | 1997-09-10 | 日本電気株式会社 | Cold cathode device and method of manufacturing the same |
-
1987
- 1987-03-19 JP JP6487887A patent/JPS63229863A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS63229863A (en) | 1988-09-26 |
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