JPH083968B2 - How to make a superconductor - Google Patents
How to make a superconductorInfo
- Publication number
- JPH083968B2 JPH083968B2 JP62173605A JP17360587A JPH083968B2 JP H083968 B2 JPH083968 B2 JP H083968B2 JP 62173605 A JP62173605 A JP 62173605A JP 17360587 A JP17360587 A JP 17360587A JP H083968 B2 JPH083968 B2 JP H083968B2
- Authority
- JP
- Japan
- Prior art keywords
- superconducting
- ceramic
- substrate
- laser
- present
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000002887 superconductor Substances 0.000 title claims description 6
- 239000000463 material Substances 0.000 claims description 32
- 239000000758 substrate Substances 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 9
- 229910010293 ceramic material Inorganic materials 0.000 claims description 8
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 230000001747 exhibiting effect Effects 0.000 claims description 3
- 238000010791 quenching Methods 0.000 claims 1
- 239000000919 ceramic Substances 0.000 description 23
- 239000010408 film Substances 0.000 description 13
- 239000010409 thin film Substances 0.000 description 11
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 230000001678 irradiating effect Effects 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 239000011572 manganese Substances 0.000 description 3
- 229910052574 oxide ceramic Inorganic materials 0.000 description 3
- 230000000737 periodic effect Effects 0.000 description 3
- 238000007639 printing Methods 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 239000011224 oxide ceramic Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 description 2
- 229910052727 yttrium Inorganic materials 0.000 description 2
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical group [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000004146 energy storage Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 125000001153 fluoro group Chemical group F* 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 229910052747 lanthanoid Inorganic materials 0.000 description 1
- 150000002602 lanthanoids Chemical class 0.000 description 1
- 238000013532 laser treatment Methods 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000013081 microcrystal Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
- 229910052845 zircon Inorganic materials 0.000 description 1
- GFQYVLUOOAAOGM-UHFFFAOYSA-N zirconium(iv) silicate Chemical compound [Zr+4].[O-][Si]([O-])([O-])[O-] GFQYVLUOOAAOGM-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E40/00—Technologies for an efficient electrical power generation, transmission or distribution
- Y02E40/60—Superconducting electric elements or equipment; Power systems integrating superconducting elements or equipment
Landscapes
- Superconductors And Manufacturing Methods Therefor (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Vapour Deposition (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
Description
【発明の詳細な説明】 「発明の利用分野」 本発明は薄膜のセラミック系超電導(超伝導ともい
う)材料の作製方法に関する。本発明は、基体上に薄膜
化して形成された材料に対し、レーザ光を選択的に照射
して超電導を用いた電子装置またはディバイスを作らん
とするものである。Description: FIELD OF THE INVENTION The present invention relates to a method for producing a thin film ceramic-based superconducting (also called superconducting) material. The present invention is intended to produce an electronic device or device using superconductivity by selectively irradiating a material formed by thinning a substrate with laser light.
「従来の技術」 従来、超電導材料はNb-Ge(例えばNb3Ge)の金属材料
が用いられている。この材料は金属であるため延性、展
性を高く有し、超電導マグネット用のコイル巻を行うこ
とが可能であった。"Background of the Invention" Conventionally, superconducting materials metallic material Nb-Ge (e.g. Nb 3 Ge) is used. Since this material is a metal, it has high ductility and malleability, and it was possible to perform coil winding for a superconducting magnet.
しかし、これらの金属材料を用いた超電導材料はTc
(超電導臨界温度を以下単にTcという)が小さく23Kま
たはそれ以下しかない。これに対し、工業上の応用を考
えるならば、このTcが77K好ましくは室温またはそれ以
上であるとさらに有効である。However, superconducting materials using these metallic materials are
(The superconducting critical temperature is hereinafter simply referred to as Tc) is as small as 23K or less. On the other hand, if industrial application is considered, it is more effective if this Tc is 77K, preferably room temperature or higher.
「従来の問題点」 このため、Tcの高い材料として金属ではなくセラミッ
ク系材料、特に酸化物セラミック系材料が注目されてい
る。しかしこの注目されているセラミック系超電導材料
はTcが高いにもかかわらず、曲げ性、延性、展性にとぼ
しく、少し曲げてもわれてしまう。いわんや0.1〜30μ
mといった厚さの薄膜を基板上に形成し、この薄膜の一
部または全部を選択的に除去することはまったく不可能
であるとされていた。特にこれを半導体集積回路と同様
のフォトリソグラフィ技術を用い多層配線を行ったり、
この薄膜超電導を用いて新しい電子ディバイスを作るこ
とはまったく不可能であった。“Conventional Problems” For this reason, ceramic-based materials, particularly oxide ceramic-based materials, are attracting attention as materials with high Tc, rather than metals. However, despite the high Tc of the ceramic-based superconducting material, which has been attracting attention, it is poor in bendability, ductility, and malleability, and is slightly bent. Iwanya 0.1-30μ
It has been considered impossible to form a thin film having a thickness of m on a substrate and selectively remove a part or all of this thin film. In particular, this is used for multi-layer wiring using the same photolithography technology as semiconductor integrated circuits,
It was completely impossible to make a new electron device using this thin film superconductivity.
「問題を解決すべき手段」 本発明はかかる薄膜状とし、この薄膜を用いて電子デ
ィバイスを作らんとしたものである。"Means for Solving the Problem" The present invention is such a thin film, and an electronic device is manufactured using the thin film.
本発明は予め所望の形状を有する基体、例えば円筒状
または板状の基体に対し、薄膜状にセラミック材料、特
に酸化物セラミック材料または酸化雰囲気でアニール
後、超電導酸化物セラミックとなる出発材料を電子ビー
ム蒸着法、スパッタ法、印刷法例えばスクリーン印刷法
またはその他の方法により形成する。According to the present invention, a substrate having a desired shape, for example, a cylindrical or plate-shaped substrate is preliminarily made into a thin film ceramic material, particularly an oxide ceramic material or a starting material which becomes a superconducting oxide ceramic after annealing in an oxidizing atmosphere. It is formed by a beam evaporation method, a sputtering method, a printing method such as a screen printing method, or another method.
この薄膜を形成すると、初期においてはこの薄膜はア
モルファス構造または格子歪および格子欠陥を多量に有
する微結晶を有する多結晶構造を呈する。この構造では
一般に半導体性または超電導性を有さない導電性または
絶縁性である。When this thin film is formed, the thin film initially exhibits an amorphous structure or a polycrystalline structure having fine crystals having a large amount of lattice strain and lattice defects. This structure is generally conductive or insulating without semiconductor or superconductivity.
このためかかる状態の膜に対し、930〜950℃での熱酸
化または焼成を行い、その後徐冷することにより、斜方
晶形のペルブスカイト構造を有する超電導材料に変成さ
せることができる。本発明はかかる超電導セラミックス
をレーザ光またはそれと同様の強光により1000℃以上の
高温にし、かつ急冷すると、その照射された領域は正方
晶形のペルブスカイト構造またはアモルファス構造に変
成し、非超電導材料となることを実験的に発見した。こ
のため本発明はかかるセラミックスに対して焼成して超
電導材料にした後、選択的にレーザ光を照射、さらに必
要に応じ走査(スキャン)を加え、一定の領域、例えば
一定の巾を有する帯状にセラミック材料を非超電導材料
に変成する。Therefore, the film in such a state is subjected to thermal oxidation or firing at 930 to 950 ° C., and then gradually cooled to be transformed into a superconducting material having an orthorhombic pervskite structure. The present invention, when the superconducting ceramics is heated to a high temperature of 1000 ° C. or higher by laser light or strong light similar thereto, and rapidly cooled, the irradiated region is transformed into a tetragonal perovskite structure or an amorphous structure, and becomes a non-superconducting material. I discovered it experimentally. Therefore, in the present invention, after firing such ceramics into a superconducting material, laser light is selectively irradiated, and scanning is further performed as necessary to form a certain region, for example, a band having a certain width. Transform the ceramic material into a non-superconducting material.
するとこのレーザ照射により正方晶形の結晶構造を有
する多結晶またはアモルファス構造に変成し、この領域
以外の部分のみ一定のTcを有する超電導材料とすること
ができる。このスパッタ法等で形成される膜はターゲッ
トを調整し、セラミック超電導材料例えば(A1-XBx)yC
uzOwXv但しx=0.1〜1好ましくは0.6〜0.7,y=2.0〜4.
0好ましくは2.5〜3.5,z=1.0〜4.0好ましくは1.5〜3.5,
w=4.0〜10.0好ましくは6〜8,v=0〜3.0であって、A
は元素周期表IIIa族特にイットリウム(Y)またはラン
タノイドより選ばれた1種類または複数種類の元素、B
は元素周期表IIa族より選ばれた1種類または複数種類
の元素、例えばバリウム(Ba)である。またXは元素周
期表VIIa族またはVIIb族より選ばれた元素であり、前者
の代表例はマンガン(Mn)である。また後者の代表例は
弗素(F)または塩素(Cl)である。Then, this laser irradiation transforms into a polycrystalline or amorphous structure having a tetragonal crystal structure, and a superconducting material having a constant Tc only in a portion other than this region can be obtained. The film formed by this sputtering method adjusts the target, and uses a ceramic superconducting material such as (A 1-X Bx) yC.
uzOwXv However, x = 0.1-1, preferably 0.6-0.7, y = 2.0-4.
0 preferably 2.5 to 3.5, z = 1.0 to 4.0, preferably 1.5 to 3.5,
w = 4.0 to 10.0, preferably 6 to 8, v = 0 to 3.0, and A
Is one or more elements selected from Group IIIa of the periodic table of elements, especially yttrium (Y) or lanthanoids, B
Is one or more kinds of elements selected from the group IIa of the periodic table of elements, for example, barium (Ba). X is an element selected from Group VIIa or VIIb of the periodic table of elements, and the former representative example is manganese (Mn). A typical example of the latter is fluorine (F) or chlorine (Cl).
本発明のレーザ光源は例えばYAGレーザ(波長1.06μ
m),エキシマレーザ(KrF,KrCl等),炭酸ガスレーザ
または窒素レーザを用いた。YAGレーザは円状のレーザ
ビームを0.5〜100KHzの周波数で繰り返して照射するこ
とができ、そしてこの照射された部分のみセラミックス
を昇温して急冷させることができる。このセラミックス
は熱伝導係数が比較的小さく、かつ急冷によりアモルフ
ァスまたは正方晶形のペルブスカイト構造を有する多結
晶になるため、レーザ光の照射された部分のみを選択的
に非超電導性の材料とすることができる。The laser light source of the present invention is, for example, a YAG laser (wavelength 1.06 μm).
m), an excimer laser (KrF, KrCl, etc.), a carbon dioxide laser or a nitrogen laser was used. The YAG laser can repeatedly irradiate a circular laser beam at a frequency of 0.5 to 100 KHz, and only the irradiated part can raise the temperature of the ceramics and rapidly cool it. Since this ceramic has a relatively small thermal conductivity coefficient and becomes a polycrystal having an amorphous or tetragonal perovskite structure by rapid cooling, it is possible to selectively make only the portion irradiated with laser light a non-superconducting material. it can.
またエキシマレーザを用いる場合は、矩形面例えば20
×30mm2に対してパルス照射をすることが可能となる。
本発明はこれを光学系でしぼることにより円(直径10〜
100μm)また帯状(巾5〜100μm長さ10〜40cm)のレ
ーザビームを作ることができ、このレーザビームをセラ
ミック膜に照射しつつ基板またはレーザ光ビームを移動
する。この時所望の照射領域のセラミックスを非超電導
材料とすることができる。When using an excimer laser, a rectangular surface such as 20
It is possible to perform pulse irradiation on × 30 mm 2 .
In the present invention, a circle (diameter 10 to
A laser beam in a band shape (width 5 to 100 μm, length 10 to 40 cm) can be produced, and the substrate or the laser light beam is moved while irradiating the ceramic film with the laser beam. At this time, the ceramics in the desired irradiation region can be made a non-superconducting material.
本発明はかくの如く基板の表面に形成されたセラミッ
ク材料に対し選択的にレーザ光を照射しつつ、また必要
に応じて走査してその部分のみ酸化物の超電導材料を非
超電導材料に変成させることを特徴としている。すると
この周辺部のレーザ光を照射しない領域は実質的に超電
導セラミックスとして残存させ得る。The present invention thus selectively irradiates the ceramic material formed on the surface of the substrate with laser light and, if necessary, scans the portion to transform the oxide superconducting material into a non-superconducting material. It is characterized by that. Then, the region of the peripheral portion which is not irradiated with the laser light can substantially remain as the superconducting ceramics.
本発明において、基板材料としてアルミナ、YSZ(イ
ットリア・スタビライズド・ジルコン)、窒化珪素、窒
化アルミニウム、ジルコニア、イットリア、チタン酸ス
トロンチウムを用いた。銅または銅合金等の金属を用い
てもよい。しかし熱膨張係数の最も類似したYSZ,チタン
酸ストロンチウムがレーザ照射を行っていない領域のTc
を高く出し得た。In the present invention, alumina, YSZ (yttria stabilized zircon), silicon nitride, aluminum nitride, zirconia, yttria, and strontium titanate were used as the substrate material. A metal such as copper or a copper alloy may be used. However, Tc in the region where YSZ and strontium titanate, which have the most similar thermal expansion coefficient, are not irradiated with laser.
Could get high.
「作用」 これまでの金属超電導材料を用いる場合、その工程と
してまず線材とする。そしてこれを所定の基体にまいて
ゆくことによりコイルを構成せしめた。[Operation] When a conventional metal superconducting material is used, a wire is first used as the process. This was applied to a predetermined substrate to form a coil.
しかし、本発明のセラミック超電導体に関しては、最
終形状の基体を設け、この基体上に結晶化熱処理の後、
斜方晶形のペルブスカイト構造を有し、超電導特性を有
する材料を膜状(そのままでは超電導を呈さない)に形
成する。そしてこの膜に熱処理を施し全面を超電導セラ
ミックスとした後、この膜に対し選択的にレーザ照射お
よび急冷(クィンチ)を行うことにより、照射した部分
のみ正方晶またはアモルファス構造とさせる。そしてこ
のレーザ光を任意に走査することにより、その表面領域
にのみ任意の線、帯または面の非超電導特性を有する領
域を導出させることができる。そしてこの照射領域以外
のセラミックスのみを超電導特性を有するセラミックス
とし、Tco(電気抵抗が零になる温度)またはそれ以下
の温度では抵抗は「0」またはそれに近い状態を生ぜし
め得る。However, with regard to the ceramic superconductor of the present invention, a base body of the final shape is provided, and after the crystallization heat treatment on this base body,
A material having an orthorhombic perovskite structure and having superconducting properties is formed into a film (which does not exhibit superconductivity as it is). Then, after heat-treating this film to form a superconducting ceramics on the entire surface, the film is selectively irradiated with laser and rapidly cooled (quenched) to form a tetragonal or amorphous structure only in the irradiated part. By arbitrarily scanning this laser beam, it is possible to derive an area having a non-superconducting property of an arbitrary line, band, or surface only in the surface area. Then, only the ceramics other than this irradiation region are made to have ceramics having superconducting properties, and at a temperature of Tco (temperature at which electric resistance becomes zero) or lower, the resistance can be "0" or a state close thereto.
以下に実施例に従って本発明を説明する。 The present invention will be described below with reference to examples.
「実施例1」 第1図は本発明の実施例を示す。Example 1 FIG. 1 shows an example of the present invention.
第1図において基体(1)はセラミック材料例えばYS
Zを用いた。金属を用いてもよい。これらの場合、セラ
ミック膜と同程度(±50%以内)の熱膨張係数の差であ
ることが好ましい。この差が大きすぎると予め作られた
超電導セラミックス薄膜(2)は応力歪を有し、超電導
を呈する温度が小さく、また膜に生ずるクラックにより
超電導が観察されなくなってしまう。この実施例では板
状を有する基体上に、電子ビーム蒸着法、スパッタ法ま
たは印刷法例えばスクリーン印刷法により0.1〜50μm
例えば20μmの厚さにセラミックス(2)を形成した。In FIG. 1, the substrate (1) is a ceramic material such as YS.
Z was used. A metal may be used. In these cases, it is preferable that the difference in coefficient of thermal expansion is similar to that of the ceramic film (within ± 50%). If this difference is too large, the superconducting ceramic thin film (2) made in advance has stress strain, the temperature at which superconductivity is exhibited is small, and the superconductivity is not observed due to cracks in the film. In this embodiment, 0.1 to 50 μm is formed on a substrate having a plate-like shape by an electron beam evaporation method, a sputtering method or a printing method such as a screen printing method.
For example, the ceramic (2) was formed to a thickness of 20 μm.
その材料は(A1-XBx)yCuzOwXvにおいて、x=0.67、
y=3,z=3,w=6〜8,v=0〜3とし、AとしてY、B
としてBa、XとしてMnを用いた。The material is (A 1-X Bx) yCuzOwXv, x = 0.67,
y = 3, z = 3, w = 6-8, v = 0-3, and A as Y, B
As Ba and X as Mn.
それを酸化性雰囲気で加熱処理を行った。500〜1000
℃例えば950℃で15時間行った。かくして超電導セラミ
ック膜を形成させた。さらにここではYAGレーザ(波長
1.06μm)(4)をレーザ処理を行うために照射した。
このレーザ光を基板を室温に保持し第1図では左端より
右端に走査し、領域(3)を作製した。YAGレーザ光
(4)はピーク出力は106〜107W/秒であった。このた
め、この領域(3)は一度溶融し、その後急冷により一
部アモルファス、一部正方晶形のペルブスカイト構造を
有する多結晶体となり、非超電導領域を構成させること
ができた。これを強くしすぎると基板(1)をも損傷さ
せてしまうため注意を要する。It was heat-treated in an oxidizing atmosphere. 500-1000
It was carried out at 15 ° C. for 15 hours. Thus, a superconducting ceramic film was formed. Furthermore, here the YAG laser (wavelength
1.06 μm) (4) was irradiated for laser treatment.
The substrate was kept at room temperature with this laser light and scanned from the left end to the right end in FIG. 1 to form a region (3). The peak output of YAG laser light (4) was 10 6 to 10 7 W / sec. Therefore, this region (3) was once melted and then rapidly cooled to become a polycrystalline body having a partially amorphous and partially tetragonal perovskite structure, and a non-superconducting region could be formed. If this is made too strong, the substrate (1) will also be damaged, so care must be taken.
またこのレーザ光をエキシマレーザを用いて行うこと
も可である。かかる場合エキシマレーザ光(波長0.25μ
m)を照射しつつ連続的に走査する。これはパルス光で
あるため、そのパルスが帯上に走査するために1つの長
方形スポットに次の長方形ビームの80〜98%が重なるよ
うにした。即ちレーザ光の走査速度は2cm/分とし、周波
数10KHz、ビーム径50μm×10cmとした。It is also possible to perform this laser light using an excimer laser. In this case, excimer laser light (wavelength 0.25μ
m) and continuously scan while irradiating. Since this is a pulsed light, 80-98% of the next rectangular beam overlaps one rectangular spot so that the pulse scans over the band. That is, the scanning speed of the laser light was 2 cm / min, the frequency was 10 KHz, and the beam diameter was 50 μm × 10 cm.
「実施例2」 第2図は本発明の他の実施例を示す。Embodiment 2 FIG. 2 shows another embodiment of the present invention.
図面において基体(1)は円筒状を有する。ここに実
施例1と同様に膜状にセラミック材料(2)を形成す
る。In the drawing, the base (1) has a cylindrical shape. The film-shaped ceramic material (2) is formed here as in the first embodiment.
この作製は印刷装置でこの円筒基体(1)を矢印(1
2)に示す如くに回転しつつコーティングすればよい。This production is performed by using a printing device to move the cylindrical substrate (1) to the arrow (1
Coating may be performed while rotating as shown in 2).
次にこれら膜を乾燥させた後、これを950℃の酸素中
に15時間熱処理をした。そしてこの薄膜のすべてを超電
導材料に変成した。この超電導材料をX線解析装置で調
べると、斜方晶形のペルブスカイト構造の多結晶を有し
ていることが判明した。Next, after drying these films, they were heat-treated in oxygen at 950 ° C. for 15 hours. And all of this thin film was transformed into a superconducting material. When this superconducting material was examined with an X-ray analyzer, it was found to have polycrystals with an orthorhombic pervskite structure.
次にこの膜にYAGレーザ(4)ビーム(径50μm)を
室温にて照射しつつ、このレーザ光を(11)の方向に徐
々に移す。同時に円筒(1)を矢印(12)の方向に回転
させる。するとこの円筒状基体に対し一本の連続した帯
状の照射領域(3)を構成させることができる。これを
X線解析装置で調べると、正方晶形を有するペルブスカ
イト構造の微結晶とアモルファス構造とが混在してい
た。そして電気的には非超電導特性を有する半絶縁性で
あった。この領域によりそれぞれの超電導特性を有する
セラミックス(5−1),(5−2)は電気的に分離さ
れて超電導領域を構成させ得る。ここではこの超電導領
域はコイル状を有し、実質的に超電導マグネットコイル
を構成させることができた。Next, while irradiating this film with a YAG laser (4) beam (diameter 50 μm) at room temperature, this laser light is gradually moved in the direction (11). At the same time, the cylinder (1) is rotated in the direction of the arrow (12). Then, one continuous strip-shaped irradiation region (3) can be formed on this cylindrical substrate. When this was examined by an X-ray analyzer, microcrystals having a perovskite structure having a tetragonal crystal form and amorphous structures were mixed. And it was electrically semi-insulating with non-superconducting properties. The ceramics (5-1) and (5-2) having respective superconducting properties can be electrically separated by this region to form a superconducting region. Here, the superconducting region had a coil shape, and could substantially constitute a superconducting magnet coil.
本発明において、レーザ光の照射された領域を急冷す
るため、この照射時における雰囲気は100℃以下好まし
くは室温にせしめ、パルス光はお互いが20%以下の重な
りとなるようにレーザ光の走査スピードを速めて用い
た。In the present invention, in order to rapidly cool the area irradiated with laser light, the atmosphere during this irradiation is kept at 100 ° C. or lower, preferably room temperature, and the pulsed light is scanned at a laser speed of 20% or less so that they overlap each other. Was used faster.
かくして超電導マグネットを作ることができた。 Thus we were able to make a superconducting magnet.
このコイルの始点と終点とを超電導線で連結すること
により、エネルギ蓄積装置とすることが可能である。By connecting the start point and the end point of this coil with a superconducting wire, an energy storage device can be obtained.
その他は実施例1と同様である。 Others are the same as the first embodiment.
「効果」 本発明によりこれまでまったく不可能とされていたセ
ラミック超電導体を実質的にコイル状、その他の形状に
基板上に選択的に残存させることが可能となった。"Effect" The present invention makes it possible to selectively leave a ceramic superconductor, which has heretofore been impossible at all, in a substantially coil shape or another shape on a substrate.
本発明においてエネルギー源としてレーザ光を用い
た。しかしこの部分に対して電子ビーム光を照射しても
よい。しかしかかる場合は真空中に被照射面を保持する
ため、急冷させにくいという欠点を有する。In the present invention, laser light is used as the energy source. However, this portion may be irradiated with electron beam light. However, in such a case, since the surface to be irradiated is held in vacuum, there is a drawback that it is difficult to cool rapidly.
かくして、曲げるとすぐわれてしまうセラミックス超
電導材料をして導線、電極または超電導素子を構成させ
るためのアイソレイションとして膜状または線状に作る
ことができた。Thus, a ceramic superconducting material that would be easily broken when bent could be formed into a film or a wire as an isolation for forming a conductor, an electrode or a superconducting element.
本発明において超電導膜を形成した後、公知のフォト
リソグラフィ技術を用い、所定のパターニンイグをし超
電導素子または超電導配線とすることはその工業的応力
を考えると重要である。In the present invention, it is important to consider the industrial stress of forming a superconducting film and then performing a predetermined patterning using a known photolithography technique to obtain a superconducting element or a superconducting wiring.
本発明の超電導材料はセラミック材料であればなんで
もよい。The superconducting material of the present invention may be any ceramic material.
第1図、第2図は本発明の超電導セラミックスの実施例
を示す。 1……基板 2……超電導セラミック材料 3……超電導を呈さない領域 4……レーザ光 5……超電導を呈する領域1 and 2 show examples of the superconducting ceramics of the present invention. 1 ... Substrate 2 ... Superconducting ceramic material 3 ... Region not exhibiting superconductivity 4 ... Laser light 5 ... Region exhibiting superconductivity
Claims (3)
形成する工程と、該材料の所定の領域に対し選択的にレ
ーザ光またはそれと同等の強光を照射し、急冷せしめる
ことにより非超電導材料に変成せしめることを特徴とす
る超電導体の作製方法。1. A step of forming a superconducting material exhibiting a superconducting state on a substrate, and a predetermined region of the material is selectively irradiated with a laser beam or intense light equivalent thereto to quench the material to rapidly cool the non-superconducting material. A method for producing a superconductor, characterized by:
料は斜方晶形ペルブスカイト構造を有し、かつ所定の領
域は正方晶形のペルブスカイト構造またはアモルファス
構造を有することを特徴とする超電導体の作製方法。2. A method for producing a superconductor according to claim 1, wherein the superconducting material has an orthorhombic pervskite structure and a predetermined region has a tetragonal pervskite structure or an amorphous structure. Method.
ク材料の熱膨張係数の±50%以内に概略一致した熱膨張
係数を有する基板が用いられたことを特徴とした超電導
体の作製方法。3. A method for producing a superconductor according to claim 1, wherein a substrate having a coefficient of thermal expansion substantially within ± 50% of a coefficient of thermal expansion of the ceramic material is used.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62173605A JPH083968B2 (en) | 1987-07-10 | 1987-07-10 | How to make a superconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62173605A JPH083968B2 (en) | 1987-07-10 | 1987-07-10 | How to make a superconductor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6417329A JPS6417329A (en) | 1989-01-20 |
| JPH083968B2 true JPH083968B2 (en) | 1996-01-17 |
Family
ID=15963704
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62173605A Expired - Fee Related JPH083968B2 (en) | 1987-07-10 | 1987-07-10 | How to make a superconductor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH083968B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6439633A (en) * | 1987-08-04 | 1989-02-09 | Mitsubishi Electric Corp | Method for driving recording medium |
-
1987
- 1987-07-10 JP JP62173605A patent/JPH083968B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6417329A (en) | 1989-01-20 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS63250881A (en) | Manufacture of superconductor | |
| JP2000150974A (en) | High-temperature superconducting Josephson junction and method of manufacturing the same | |
| EP0282360B1 (en) | Method for manufacturing components of superconducting ceramic oxide materials | |
| JP2645489B2 (en) | Superconductor fabrication method | |
| JPH083968B2 (en) | How to make a superconductor | |
| JP2624690B2 (en) | Oxide superconducting device and method of manufacturing the same | |
| JP2660280B2 (en) | Superconductor | |
| JPH0812819B2 (en) | Superconductor fabrication method | |
| JP2630362B2 (en) | Superconducting coil | |
| JP2005053755A (en) | Oxide epitaxial thin film and method for producing the same | |
| JPS63207009A (en) | Manufacture of superconductor | |
| JPS63224271A (en) | superconductor | |
| JPS63224270A (en) | How to make superconducting coils | |
| JP5453627B2 (en) | Manufacturing method of oxide superconductor film with reduced internal stress | |
| JPS63304678A (en) | Manufacture of oxide superconducting circuit | |
| JP2585624B2 (en) | Superconducting coil fabrication method | |
| JPH07142777A (en) | Manufacture of oxide superconducting material | |
| JPH01115898A (en) | Production of oxide superconductor film | |
| JPH01100096A (en) | Production of oxide superconductor thin film | |
| JPH01157580A (en) | Manufacture of superconductive circuit | |
| JPH063766B2 (en) | Superconducting coil manufacturing method | |
| JP2645490B2 (en) | How to make superconducting material | |
| JPH01115899A (en) | Production of oxide superconductor film | |
| Azman et al. | Effects of Annealing Treatment and Elemental Composition on Bi1. 6Pb0. 4Sr2Ca2Cu3Oy Thin Films Grown by Pulsed Laser Deposition | |
| JP2654555B2 (en) | Superconducting device manufacturing method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |