h2-35とは 意味・読み方・使い方

Signals h1 and h2 passed through only the group of resistors 35-38 are computed by an exclusive OR circuit 23, and when a difference between the total number of steps of the group of resistors 35 and 37 and that of the group of resistors 36 and 38 is detected, a difference of the number of steps of the group of resistors 31-34 is obtained.例文帳に追加

レジスタ群３５〜３８のみを介した信号ｈ１，ｈ２を排他的論理和回路２３で演算し、レジスタ群３５，３７の段数の合計とレジスタ群３６，３８の段数の合計との相違を検出して、レジスタ群３１〜３４の段数を相違を得る。 - 特許庁

The heat exchangers H4, H3, H2 and H1 are disposed successively inside of exhaust ports 18, inside of pre-catalytic devices 34 and downstream of main catalytic devices 35 all interposed in exhaust passages 33 from an internal combustion engine.例文帳に追加

内燃機関の排気通路３３に設けた排気ポート１８の内部、プリ触媒装置３４の内部およびメイン触媒装置３５の下流に熱交換器Ｈ４，Ｈ３，Ｈ２，Ｈ１を順次配置する。 - 特許庁

The fuel reforming device 35 reforms CH4 in the gas fuel into CO and H2 under the presence of hot water heated with the heat exchanger 5, and enhances heat efficiency.例文帳に追加

燃料改質装置３５は，排気ガスから分離したＣＯ_2 と熱交換器５で加熱された熱水の存在のもとでガス燃料中のＣＨ_4 をＣＯとＨ_2 に改質し，熱効率をアップさせる。 - 特許庁

Projected height H3 from a belt body outer peripheral surface of the cushioning protruded part 37 is higher than projected height H1 from an outer peripheral surface of the belt body 32 on the side plate peripheral edges and lower than height H2 of the grounding lugs 35, 36.例文帳に追加

緩衝凸部３７のベルト本体外周面からの突出高さＨ３は、側板周縁のベルト本体３２外周面からの突出高さＨ１より高く、接地ラグ３５，３６の高さＨ２より低い。 - 特許庁

First heat exchanges H4, H3, H2 are arranged inside of an exhaust port 18, inside of a pre-catalyst device 34 and on the downstream side of a main catalyst device 35 provided for each of exhaust passages 33 of a multiple cylinder internal combustion engine.例文帳に追加

多気筒内燃機関の各排気通路３３毎に設けた排気ポート１８の内部、プリ触媒装置３４の内部およびメイン触媒装置３５の下流に第１の熱交換器Ｈ４，Ｈ３，Ｈ２を配置する。 - 特許庁

Further, the discharge port 22a is arranged in an area located within the diffusion chamber 35 opposing the middle of the lower surface 35b and in an area space apart by an interval H2 corresponding to the discharge port from the lower surface 35b so as to be upwardly shifted to the upper surface side 35a.例文帳に追加

また、その拡散室３５内にあって下面３５ｂ中央と相対する位置に排出口２２ａを配設し、しかもその排出口２２ａを下面３５ｂから排出口離間量Ｈ２だけ離間する位置に配設し、上面３５ａ側に偏倚させるようにした。 - 特許庁

A multilayer insulating film consisting of a first insulating film 33, a first hydrogen barrier film 34, and a second insulating film 35 is formed on the first interlayer insulating film 20 on the periphery of the first plug electrode 21, and a second contact hole H2 is formed by etching the multilayer insulating film.例文帳に追加

次に、この第１プラグ電極２１周辺の第１層間絶縁膜２０上に第１絶縁膜３３と第１水素バリア膜３４と第２絶縁膜３５とからなる積層構造の絶縁膜を形成し、この積層構造の絶縁膜をエッチングして、第２コンタクトホールＨ２を形成する。 - 特許庁

Then an H2 multiplication section 35, an H4 multiplication section 36, an H8 multiplication section 37, and an H128 multiplication section 41 are placed in parallel with an input stage of an inverse element arithmetic section 33c and multiplying all data outputted from the multiplication sections obtains αi=(α-i)254.例文帳に追加

そして、それらの乗算を行うＨ^２乗算部３５，Ｈ^４乗算部３６，Ｈ^８乗算部３７，…，Ｈ^１２８乗算部４１を逆元演算部３３ｃの入力段に並列に配置し、それらの各乗算部より出力されるデータを全て乗じ合わせることでα^ｉ＝（α^−ｉ）^２５４を求める。 - 特許庁