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GB2117669A - Polymeric films - Google Patents
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GB2117669A - Polymeric films - Google Patents

Polymeric films Download PDF

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Publication number
GB2117669A
GB2117669A GB08206563A GB8206563A GB2117669A GB 2117669 A GB2117669 A GB 2117669A GB 08206563 A GB08206563 A GB 08206563A GB 8206563 A GB8206563 A GB 8206563A GB 2117669 A GB2117669 A GB 2117669A
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GB
United Kingdom
Prior art keywords
process according
substrate
polymer
preformed
reservoir
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GB08206563A
Inventor
Christopher Simon Winter
Richard Harfield Tredgold
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NAT RES DEV
National Research Development Corp UK
Original Assignee
NAT RES DEV
National Research Development Corp UK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NAT RES DEV, National Research Development Corp UK filed Critical NAT RES DEV
Priority to GB08206563A priority Critical patent/GB2117669A/en
Priority to PCT/GB1983/000065 priority patent/WO1983003165A1/en
Priority to JP83500897A priority patent/JPS59500339A/en
Priority to EP83902274A priority patent/EP0114851A1/en
Priority to GB08306026A priority patent/GB2121315B/en
Publication of GB2117669A publication Critical patent/GB2117669A/en
Withdrawn legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/68—Organic materials, e.g. photoresists
    • H10P14/683—Organic materials, e.g. photoresists carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00—Processes for applying liquids or other fluent materials
    • B05D1/18—Processes for applying liquids or other fluent materials performed by dipping
    • B05D1/20—Processes for applying liquids or other fluent materials performed by dipping substances to be applied floating on a fluid
    • B05D1/202—Langmuir Blodgett films (LB films)
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01332—Making the insulator
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01332—Making the insulator
    • H10D64/01336—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/701—Langmuir Blodgett films
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6342—Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating
    • H10P14/6344—Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating using Langmuir-Blodgett techniques
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/20—Organic diodes
    • H10K10/23—Schottky diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Composite Materials (AREA)
  • Manufacturing & Machinery (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Formation Of Insulating Films (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)

Abstract

A process for the preparation of an ordered polymeric film on a substrate, which process comprises: (i) providing a reservoir of the amphiphilic preformed polymer; (ii) advancing the polymeric film receiving substrate into or onto the reservoir at least once; and (iii) recovering the substrate coated with the polymeric film.

Description

SPECIFICATION Polymeric films This invention relates to polymericfilms; more particularly, this invention relates to very thin, highly ordered polymeric films on a substrate; to their preparation, for example, by the Langmuir-Blodgett (L-B) technique; and to semiconductor and superconductor devices utilising them.
It is known that successive monomolecular layers of amphiphilic organic molecules, for example soaps such as neutral or acid calcium stearate, may be deposited on a substrate, for example glass, by the L-B technique (J. Am. Chem. Soc. 56495 (1934) and 57,1007(1935)). Polymericfilms may be formed in situ by the L-B technique by utilising, as amphiphilic organic molecule, an unsaturated ester of a fatty acid such as vinyl stearate which is subsequently radiation polymerised, for example by exposure to a y-source such as 60Co. (J. Polym. Sci. Al 10, 2061 (1972)). More recently, this technique has been used with qualified success in the laboratory to provide gate insulators in field effect transistors and to increase the efficiency of photodiodes in solar cells.
However, the mechanical and thermal stability of the films hitherto produced has been poor and has prevented their practical commercialisation.
This invention seeks to provide thin ordered polymeric films of improved mechanical and thermal stability.
According, therefore, to one aspect of this invention there is provided a process which comprises: i) providing a reservoir of the preformed polymer; ii) advancing the polymeric film receiving substrate into the reservoir at least once; and iii) recovering the substrate coated with the polymeric film.
In accordance with one embodiment of the invention, the reservoir comprises a monomolecular layer of the preformed polymer formed at a fluid phase interface. Preferably, the monomolecular layer is maintained at a constant surface pressure.
The fluid phase interface is suitably one between a liquid and a gas or vapour. For convenience the liquid is preferably an aqueous medium and the gas is air.
In accordance with a further embodiment of the invention, the reservoir comprises a solution of the preformed polymer. Suitably, the solution comprises an organic solvent, for example chloroform.
The preformed polymer is suitably an organic polymer, desirably one which is amphiphilic. Preferably it is a vinyl polymer which is rendered amphiphilic by the presence of both hydrophobic and hydrophilic pendant groups.
Suitable hydrophobic groups include unsubstituted or mono- or poly- halo- or hydrocarbyloxysubstituted hydrocarbyl(oxy) groups. By "hydrocarbyl(oxy)" is meant herein hydrocarbyl or hydrocarbyloxy. Examples include aryl and aralkyl groups such as phenyl or benzyl and alkyl(oxy), groups such as C40 to C4, preferably C20 to Clo alkyl(oxy), groups such as n-octadecyloxy and n-hexadecyl. It is an important feature of this invention that comparatively short hydrophobic groups may be used, for example phenyl.
Suitable hydrophilic groups include hydroxyl; poly(ethyleneoxy); N-pyridyl; N-pyrrolidyl; carboxyl, and precursors which are hydrolysable thereto, for example cyano-, amido, imido, acid anhydride and acyl chloride.
Preferred preformed polymers are copolymers of an unsaturated acid anhydride, such as maleic anhydride, with styrene; a C12to C22alk-1-ene; ora C10 to C20 vinyl ether.
Mixtures of hydrophobic and of hydrophilic groups may be incorporated into the polymer but, for greater ordering, it is preferred that there is one hydrophobic and one hydrophilic group. It is also preferred that the copolymer is an alternating copolymer. Examples include poly(n-octadecyl vinyl ether/maleic anhydride); poly(styrene/maleic anhydride) and poly(maleic anhydride/octadecene-1).
In accordance with the first embodiment of the invention, the preformed polymer is suitably incorporated as a monomolecular layer at the fluid phase interface by dissolving it in a volatile organic solvent, such as chloroform, and adding the solution in an amount calculated in known manner (essentially by determining the effective area per molecule from the absorption isotherm and then determining the quantity of solution required to give a monomolecular layer over a known area) to leave, on evaporation, a monomolecular layer.It is preferred that the monomolecular layer is equilibrated for 1 to 3h at 30 to 40 C, typically 35 C. it is then subjected, prior to advancing the substrate through it, to a constant surface pressure, typically of 30 to 45 mNm-, by means of an adjustable boom of polyethylene tetrafluoride tape which confines the monomolecular layer.
The process of the present invention is applicable to a wide variety of substrates, including glasses such as aluminosilicate glasses, metals such as aluminium, chromium, nickel, brass, steel, cast iron, silver, platinum or gold, metal oxide layers on aluminium ortin, plastics such as polystyrene, poly(ethylene terephthalate), cellulose acetate or polypropylene plastics and, in accordance with one particularly preferred aspect of this invention, semiconducting materials, for example silicon single crystals; amorphous silicon; Ill-V compounds such as BN, BP, AISb, GaN, GaP, GaSb, GaAs, InP, InAs, preferably GaP, GaAs and InP; Il-VI compounds such as CdS, Cd, Se, CdTe, ZnO and ZnS, preferably CdS and CdTe; and IV-VI compounds such as PbS and PbTe.In accordance with another particularly preferred aspect of this invention the substrate may be a superconducting material, for example a superconducting metal, or a superconducting alloy thereof, of Groups IIIA, IVA, VA, VIVA, VIII, IIB, IIIB or IVB of the Periodic Table, such as Nd, Ti, Zn, Hf, Th, V, Nb, Ta, Ro, Ru, Os, Zn, Cd, Hg, Al, Ga, In, TI, Sn, Pb, preferably Nd, Nb and Sn including the compound Nb3Sn.
The substrate may need preparation in known manner prior to coating; for example, silicon may need to be etched and it may need to have a thin coating of oxide formed thereon.
The substrate is advanced through the reservoir of preformed polymer in known manner, for example by being coupled to a simple variable speed motor, typically at a speed of 0.5 to 50, preferably 1 to 10, mm.min#'. The substrate may, depending (it is believed) on whether it is wetted on only one or both the advancing and recovering operations accrete one (X-mode) or two (Y-mode) ordered polymeric films. The advancing and recovering operations may be repeated, if desired, to build up thicker ordered films.
When the final recovering operation has been effected it is desirable to dry the coated substrate, suitably overnight, in helium or nitrogen.
An electrode, for example 50A to 1000W of Au can then be evaporated at ambient temperature to -1000C.
It is then desirable to give the dried coated substrate onto which an electrode has been evaporated an annealing treatment in which it is maintained, typically for 2 to 4 days, at a temperature from ambient to 2000C, preferably above 50 C typi- cally from 100#to 1800C, such as 150"C which is believed to enhance the ordering of the polymeric film.
The monomolecular layers coated onto substrates in accordance with the present invention are more heat stable and resistive and, when annealed, more ordered than those prepared in accordance with prior art methods. The layers can act as gate insulators in field effect transistors and efficiency enhancers in photodiodes.
Semiconductor and superconductor devices which comprise a preformed polymeric coating formed in accordance with the method of this invention include photoresists; Josephson junctions of a stable variety capable of use in ultra high speed computer memories; gas detectors in field effect transistors of suitable structure; and electroluminescent devices.
The following Examples illustrate the invention.
EXAMPLE 1 A glass Langmuirtrough having dimensions 50 cmx 16 cm x 6 cm was filled with 2,500 ml of 2.5 x 10-4M aqueous Cd Cl2 at pH=5.6. The trough was then supported in a water bath maintained at 35OC which was itself seated on massive foundations to minimise vibration.
500 ijI of a solution of 0.1 mg ml- of poly(n-octadecyl vinyl ether/maleic anhydride) in chloroform were next spread on the aqueous surface in the trough to form a monolayer. The film was left for 2h to hydrolyse the anhydride groups and equilibriate.
It was then compressed by an adjustable boom of poly(ethylene tetrafluoride) at a surface pressure of 30 mNm-' and was maintained under constant pressure for 20 minutes by the boom which was adjustable to provide constant pressure by a differential feedback mechanism.
A single crystal S-doped n±Gap slice, polished on both sides, was next lowered at a speed of 3mm mien~1 through the monolayer and, after immersion, was removed at the same speed. The semiconductor, now coated on both sides with a monomolecular layer of the polymer, was then dried overnight in helium. Finally, the coated semiconductor was stored in dry nitrogen for 3d and then a Au electrode 50A thick was evaporated onto a coated surface at room temperature at 10-5 Torr.
EXAMPLES 2 and 3 In these Examples the procedure of Example 1 was repeated utilising, respectively, a chloroform solution of poly(styrene/maleic anhydride) and of poly(maleic anhydrideloctadecene-1).

Claims (28)

1. A process for, the preparation of the ordered polymeric film on a substrate, which process comprises: i) providing a reservoir of the preformed polymer; ii) advancing the polymeric film receiving substrate into the reservoir at least once; and iii) recovering the substrate coated with the polymeric film.
2. A process according to Claim 1 wherein the reservoir comprises a monomolecular layer of the preformed polymer formed at a fluid phase interface.
3. A process according to Claim 2 wherein the monomolecular layer is maintained at a constant surface pressure.
4. A process according to Claim 2 or 3 wherein the fluid phase interface is an airlaqueous medium interface.
5. A process according to Claim 1 wherein the reservoir comprises a solution of the preformed polymer.
6. A process according to Claim 5 wherein the solution comprises an organic solvent.
7. A process according to any preceding claim wherein the polymer is an amphiphilic organic polymer.
8. A process according to Claim 7 wherein the polymer is a vinyl polymer.
9. A process according to Claim 8 wherein the vinyl polymer is rendered amphiphilic by the presence of both hydrophobic and hydrophilic pendant groups.
10. A process according to Claim 9 wherein the hydrophobic group comprises phenyl or C,0 to C20 alkyl(oxy) groups.
11. A process according to Claim 9 or 10 wherein the hydrophilic groups comprise carboxyl groups or precursors which are hydrolysable thereto.
12. A process according to any of Claims 9, 10 or 11 wherein the preformed vinyl polymer is a copolymer of an unsaturated acid anhydride with styrene a C12 to C22 alk-1 -ene or a C10 to C20 vinyl ether.
13. A process according to any of Claims 9 to 12 wherein the preformed vinyl polymer is an alternating copolymer.
14. A process according to any preceding Claim wherein the substrate comprises a semiconducting material.
15. A process according to Claim 10 wherein the semi-conducting material comprises silicon, a Ill-V compound or a Il-VI compound.
16. A process according to any preceding claim wherein the substrate comprises a superconducting material.
17. A process according to Claim 16 wherein the superconducting material comprises Nd, Nb, or Sn, or a compound thereof.
18. A process according to any preceding claim wherein the substrate is advanced through the reservoir of preformed polymer at a speed of 0.5 to 50 mm min-1.
19. A process according to any preceding claim wherein conditions are such that the substrate is coated in the X-mode.
20. A process according to any of Claims 1 to 18 wherein conditions are such that the substrate is coated-in theY-mode.
21. A process according to any preceding claim wherein the advancing and recovering operation are repeated.
22. A process according to any preceding claim wherein, after the final recovery operation, the coated substrate is dried.
23. A substrate coated with a preformed polymeric film whenever prepared by a process according to any of the preceding claims.
24. A substrate according to Claim 23 which comprises a semiconducting ora superconducting material.
25. A substrate according to Claim 24 onto the polymeric surface of which an electrode has been evaporated.
26. A substrate according to Claim 25 which is annealed.
27. A substrate according to Claim 26 wherein the annealing is effected at a temperature above 50 C.
28. A substrate according to any of Claims 23 to 27 wherein the thickness of the coating is as greater than 20A.
GB08206563A 1982-03-05 1982-03-05 Polymeric films Withdrawn GB2117669A (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
GB08206563A GB2117669A (en) 1982-03-05 1982-03-05 Polymeric films
PCT/GB1983/000065 WO1983003165A1 (en) 1982-03-05 1983-03-04 Polymeric films
JP83500897A JPS59500339A (en) 1982-03-05 1983-03-04 polymer film
EP83902274A EP0114851A1 (en) 1982-03-05 1983-03-04 Polymeric films
GB08306026A GB2121315B (en) 1982-03-05 1983-03-04 Polymer films

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB08206563A GB2117669A (en) 1982-03-05 1982-03-05 Polymeric films

Publications (1)

Publication Number Publication Date
GB2117669A true GB2117669A (en) 1983-10-19

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ID=10528813

Family Applications (2)

Application Number Title Priority Date Filing Date
GB08206563A Withdrawn GB2117669A (en) 1982-03-05 1982-03-05 Polymeric films
GB08306026A Expired GB2121315B (en) 1982-03-05 1983-03-04 Polymer films

Family Applications After (1)

Application Number Title Priority Date Filing Date
GB08306026A Expired GB2121315B (en) 1982-03-05 1983-03-04 Polymer films

Country Status (4)

Country Link
EP (1) EP0114851A1 (en)
JP (1) JPS59500339A (en)
GB (2) GB2117669A (en)
WO (1) WO1983003165A1 (en)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4611385A (en) * 1982-06-18 1986-09-16 At&T Bell Laboratories Devices formed utilizing organic materials
FR2556244B1 (en) * 1983-12-09 1986-08-08 Commissariat Energie Atomique DEVICE FOR FORMING AND DEPOSITING ON A SUBSTRATE OF MONOMOLECULAR LAYERS
FR2564231B1 (en) * 1984-05-10 1986-09-05 Commissariat Energie Atomique ELECTRICALLY CONDUCTIVE FILMS COMPRISING AT LEAST ONE MONOMOLECULAR LAYER OF AN ORGANIC COMPLEX WITH LOAD TRANSFER AND THEIR MANUFACTURING METHOD
EP0244835B1 (en) * 1986-05-09 1992-08-26 Nippon Oil And Fats Company, Limited Langmuir-blodgett ultrathin membrane of polyfumurate
FI77679C (en) * 1987-02-23 1989-04-10 K & V Licencing Oy Film aggregate and process for its preparation.
US5079179A (en) * 1987-10-09 1992-01-07 Hughes Aircraft Company Process of making GaAs electrical circuit devices with Langmuir-Blodgett insulator layer
EP0333838B1 (en) * 1987-10-09 1994-03-23 Hughes Aircraft Company GaAs ELECTRICAL CIRCUIT DEVICES WITH LANGMUIR-BLODGETT INSULATOR LAYER
DE3843194A1 (en) * 1988-12-22 1990-07-12 Hoechst Ag AMPHIPHILE MONOMERS WITH MIXED-CHAIN STRUCTURE AND POLYMERS AND FILM FROM AT LEAST ONE MONOMOLECULAR LAYER THEREOF
DE3911929A1 (en) * 1989-04-12 1990-10-18 Hoechst Ag AMPHIPHILES MONOMERS AND POLYMERS AND FILM OF AT LEAST ONE MONOMOLECULAR LAYER THEREOF
EP0503420A1 (en) * 1991-03-15 1992-09-16 Hoechst Aktiengesellschaft Amphiphilic polymers with silane units and film with at least one monomolecular layer of such a polymer
RU2137250C1 (en) * 1998-11-30 1999-09-10 Санкт-Петербургский государственный электротехнический университет Method for epitaxial growth of scanty soluble amphiphilous material
CN1064379C (en) * 1998-12-05 2001-04-11 中国科学院固体物理研究所 Porous figure film of alternate styrene-maleic anhydride copolymer and its preparation
US20110139601A1 (en) * 2008-04-24 2011-06-16 First Green Park Pty Ltd Solar stills
KR101783420B1 (en) * 2016-05-12 2017-10-11 한국화학연구원 Composition for insulator of thin film transistor, insulator and organic thin film transistor prepared thereby
CN118206067B (en) * 2024-05-20 2024-07-16 北京量子信息科学研究院 Pressure sensor chip based on semiconductor film and preparation method thereof

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1125258A (en) * 1968-02-08 1968-08-28 Engels Chemiefaserwerk Veb A process for the continuous production of high polymer polyesters or mixed polyesters
GB1218634A (en) * 1968-04-16 1971-01-06 Nat Res Dev Method of very low-temperature heat exchange

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1572181A (en) * 1975-08-18 1980-07-23 Ici Ltd Device comprising a thin film of organic materila

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1125258A (en) * 1968-02-08 1968-08-28 Engels Chemiefaserwerk Veb A process for the continuous production of high polymer polyesters or mixed polyesters
GB1218634A (en) * 1968-04-16 1971-01-06 Nat Res Dev Method of very low-temperature heat exchange

Also Published As

Publication number Publication date
GB8306026D0 (en) 1983-04-07
JPS59500339A (en) 1984-03-01
WO1983003165A1 (en) 1983-09-15
GB2121315A (en) 1983-12-21
GB2121315B (en) 1985-08-29
EP0114851A1 (en) 1984-08-08

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