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JP2502792B2 - Vacuum deposition source and magnetic recording medium deposited using the vacuum deposition source - Google Patents
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JP2502792B2 - Vacuum deposition source and magnetic recording medium deposited using the vacuum deposition source - Google Patents

Vacuum deposition source and magnetic recording medium deposited using the vacuum deposition source

Info

Publication number
JP2502792B2
JP2502792B2 JP18080690A JP18080690A JP2502792B2 JP 2502792 B2 JP2502792 B2 JP 2502792B2 JP 18080690 A JP18080690 A JP 18080690A JP 18080690 A JP18080690 A JP 18080690A JP 2502792 B2 JP2502792 B2 JP 2502792B2
Authority
JP
Japan
Prior art keywords
vapor deposition
partition member
crucible
liquid surface
deposition material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP18080690A
Other languages
Japanese (ja)
Other versions
JPH0472058A (en
Inventor
勇 井上
秀信 新宅
茂夫 鈴木
佳代子 児玉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP18080690A priority Critical patent/JP2502792B2/en
Priority to DE69007433T priority patent/DE69007433T2/en
Priority to EP90122752A priority patent/EP0430210B1/en
Publication of JPH0472058A publication Critical patent/JPH0472058A/en
Application granted granted Critical
Publication of JP2502792B2 publication Critical patent/JP2502792B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Physical Vapour Deposition (AREA)
  • Manufacturing Of Magnetic Record Carriers (AREA)
  • Thin Magnetic Films (AREA)

Description

【発明の詳細な説明】 産業上の利用分野 本発明は、基板に薄膜を形成するために、蒸着材料を
溶融し蒸発させる真空蒸着源及びその真空蒸着源を用い
て蒸着した磁気記録媒体に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a vacuum evaporation source that melts and evaporates an evaporation material to form a thin film on a substrate, and a magnetic recording medium evaporated using the vacuum evaporation source. Is.

従来の技術 例えば、真空蒸着などによって長尺フィルム上に薄膜
を形成して、コンデンサや磁気テーブ等の素材となる機
能性フィルムなどを作製するためには、長時間に亘って
大量の蒸着材料の蒸気を発生させる必要がある。そのた
めには蒸発坩堝などの被加熱位置において蒸着材料を連
続的に供給することが必要となってくる。
Conventional technology For example, in order to form a thin film on a long film by vacuum deposition or the like and to manufacture a functional film, which is a material for capacitors, magnetic tables, etc., a large amount of vapor deposition material is required for a long time. It is necessary to generate steam. For that purpose, it becomes necessary to continuously supply the vapor deposition material at a heated position such as an evaporation crucible.

蒸着材料が単一金属の場合は、蒸発した量を補うよう
に蒸着材料を補給すれば目的を達せられる。しかしなが
ら蒸着材料が、蒸発速度が相異なる成分から成る例えば
磁性膜材料であるCo−Cr合金の場合、基板に形成された
合金薄膜の膜厚及び組成比を一定に保つためには次に説
明する材料補給条件を満たす必要がある。
When the vapor deposition material is a single metal, the purpose can be achieved by replenishing the vapor deposition material so as to supplement the evaporated amount. However, when the vapor deposition material is composed of components having different evaporation rates, for example, Co--Cr alloy which is a magnetic film material, in order to keep the film thickness and composition ratio of the alloy thin film formed on the substrate constant, it will be described below. Material supply conditions must be met.

CrはCoよりも3〜4倍蒸発速度が高いので目的とする
薄膜のCr含有量をMとし、その含有量Mの薄膜が得られ
る時の薄膜材料の溶湯のCr含有量をYとすると、M>Y
でM=(3〜4)×Yである。また溶湯の液面から発生
する蒸気のCr含有量はMに等しい。
Since Cr has a three to four times higher evaporation rate than Co, the Cr content of the target thin film is M, and the Cr content of the molten metal of the thin film material when the thin film having the content M is obtained is Y, M> Y
And M = (3-4) × Y. Further, the Cr content of the vapor generated from the liquid surface of the molten metal is equal to M.

従って蒸発した量だけCr含有量Mの材料を供給してや
れば坩堝内の薄膜材料を溶湯の量を一定に保ちつつCr含
有量Mの薄膜を連続して蒸着できることになる。
Therefore, if the material with the Cr content M is supplied by the amount of evaporation, the thin film material with the Cr content M can be continuously deposited while keeping the amount of the molten metal of the thin film material in the crucible constant.

ここで重要な点は、蒸発速度の高い成分を溶湯よりも
多く材料を補給することにある。
The important point here is to replenish the material with more components having a high evaporation rate than the molten metal.

従来の蒸着源において、上記蒸発速度が相異なる成分
から成る合金材料を蒸着する場合の問題点をCo−Cr合金
を例として第21図を用いて説明する。
A problem in the case of depositing an alloy material composed of components having different evaporation rates in a conventional vapor deposition source will be described with reference to FIG. 21 using a Co—Cr alloy as an example.

第21図において、1は坩堝2に収容された蒸着材料で
ある。蒸着材料1がCo−Cr合金のような高融点金属の場
合は、坩堝2には耐熱性のある材料としてMgO等のセラ
ミックスが用いられる。40は、そのセラミックス製の坩
堝2がヒートショック等により破損しても蒸着材料1の
高温の溶液が流出しないように坩堝2を保持するハース
で一般にCuで形成される。41は、ハースが溶融しないよ
うに冷却水を流通させるために形成された流路である。
42は、坩堝2とハース40の間に位置して坩堝2を保持す
る薄肉のケースで、一般にCuで形成される。43は、ケー
ス42に形成された鍔44に設けられたネジ孔である。この
ネジ孔43に図示しないがボルトをねじ込み、そのボルト
を保持することにより、ケース42ごと坩堝2をハース40
から容易に取り外す事ができる。
In FIG. 21, reference numeral 1 is a vapor deposition material housed in the crucible 2. When the vapor deposition material 1 is a refractory metal such as a Co-Cr alloy, the crucible 2 is made of ceramics such as MgO as a heat resistant material. Reference numeral 40 denotes a hearth that holds the crucible 2 so that the high temperature solution of the vapor deposition material 1 does not flow out even if the ceramic crucible 2 is damaged by heat shock or the like, and is generally made of Cu. Reference numeral 41 is a flow path formed for circulating cooling water so that the hearth does not melt.
42 is a thin-walled case that is located between the crucible 2 and the hearth 40 and holds the crucible 2, and is generally made of Cu. 43 is a screw hole provided in a collar 44 formed on the case 42. A bolt (not shown) is screwed into the screw hole 43, and the bolt is held to hold the case 42 and the crucible 2 together.
Can be easily removed from.

蒸着材料1は、例えば矢印E方向に走査される電子ビ
ーム7Aにより加熱されて溶融する。3は棒状の補給用長
尺蒸着材料(以下棒材と略す)で、11、12、13はそれぞ
れ棒材3を案内する回転ローラ、14は駆動ローラであ
る。モータ20は図示しない真空チャンバ内に設置されて
直接駆動ローラ14を駆動するか、あるいは外部に設置さ
れて公知の回転導入器を介して駆動ローラ14を駆動す
る。駆動ローラ14は、モータ20により反時計方向に駆動
されて、回転ローラ11との間に棒材3を挟み込んで棒材
3を矢印A方向に一定速度で溶融した蒸着材料1の液面
4に向かって移送する。15、16は、蒸着材料1の蒸気が
各ローラ11、12、13、14に付着することを防止するカバ
ーである。
The vapor deposition material 1 is heated and melted by the electron beam 7A which is scanned in the arrow E direction, for example. 3 is a rod-shaped long vapor deposition material for replenishment (hereinafter abbreviated as rod), 11, 12 and 13 are rotating rollers for guiding the rod 3, and 14 is a driving roller. The motor 20 is installed in a vacuum chamber (not shown) to directly drive the drive roller 14, or is installed externally to drive the drive roller 14 via a known rotation introducer. The drive roller 14 is driven in the counterclockwise direction by the motor 20 to sandwich the bar 3 between itself and the rotating roller 11 so that the bar 3 is melted at a constant speed in the direction of arrow A onto the liquid surface 4 of the vapor deposition material 1. Transfer to. Reference numerals 15 and 16 are covers that prevent the vapor of the vapor deposition material 1 from adhering to the rollers 11, 12, 13, and 14.

8はフィルム等の基板で、坩堝2の上方を図示しない
が公知のローラ等の手段により支持されて、紙面に垂直
方向に走行する。
Reference numeral 8 denotes a substrate such as a film, which is supported above the crucible 2 by a known roller or the like (not shown) and runs in a direction perpendicular to the plane of the drawing.

以上の構成により、長時間に亘って膜厚一定、組成比
一定の薄膜9を基板8に形成するために坩堝2内の蒸着
材料1が蒸発によって減少した量を補うように棒材3が
補給される。
With the above configuration, the bar material 3 is replenished so as to make up the amount of the vapor deposition material 1 in the crucible 2 reduced by evaporation in order to form the thin film 9 having a constant film thickness and a constant composition ratio on the substrate 8 for a long time. To be done.

第22図に示すように棒材3の先端5が液面4に接する
と先端5は液面4から熱を吸収して溶融を始め、溶液6
となって蒸着材料1の溶液に溶け込む。この時溶液6の
一部6Aは電子ビーム7Aの照射により液面4が高温に加熱
された蒸発領域Eaに流入する。溶液6は蒸発速度の高い
成分(Cr)を多く含むので急激な蒸発が発生する。急激
な蒸発は、液滴の飛散を誘発する。
As shown in FIG. 22, when the tip 5 of the rod 3 comes into contact with the liquid surface 4, the tip 5 absorbs heat from the liquid surface 4 and starts melting, and the solution 6
And dissolves in the solution of the vapor deposition material 1. At this time, a part 6A of the solution 6 flows into the evaporation region Ea where the liquid surface 4 is heated to a high temperature by the irradiation of the electron beam 7A. Since the solution 6 contains a large amount of a component (Cr) having a high evaporation rate, rapid evaporation occurs. The rapid evaporation induces the droplets to fly.

液滴の飛散は、次に説明する要因によっても発生す
る。
Droplet scattering also occurs due to the factors described below.

棒材3の表面には通常、酸化被膜が形成されており、
また酸化物などの不純物が付着していることがある。ま
た棒材3は内部に、その製造工程で混入した酸化物を含
んでいることがある。第23図に示すように、そのような
棒材3が液面4に供給されると、前記酸化物は融点が高
く、比重が蒸着材料1の溶液よりも小さいので液面4の
上を浮遊物3Aとなって漂う。この浮遊物3Aが蒸発領域Ea
に流入し、電子ビーム7Aに照射されると融点が高いので
容易に蒸発せず、非常に高い温度に加熱される。そうす
るとこの高温に加熱された浮遊物3Aと接触する液面4の
部分では、前記と同様に急激に蒸発が発生し、液滴の飛
散を誘発することになる。
An oxide film is usually formed on the surface of the rod 3,
In addition, impurities such as oxides may be attached. In addition, the rod 3 may contain an oxide mixed therein during the manufacturing process. As shown in FIG. 23, when such a rod 3 is supplied to the liquid surface 4, the oxide has a high melting point and has a specific gravity smaller than that of the solution of the vapor deposition material 1, so that it floats above the liquid surface 4. It becomes a thing 3A and drifts. This suspended matter 3A is the evaporation area Ea.
When the electron beam 7A flows in and is irradiated with the electron beam 7A, it has a high melting point and thus is not easily evaporated and is heated to a very high temperature. Then, in the portion of the liquid surface 4 that comes into contact with the suspended matter 3A heated to this high temperature, abrupt evaporation occurs in the same manner as described above, causing the scattering of droplets.

その液滴はスプラッシュと称せられ、基板に付着して
突起異物となる。基板に磁性膜を形成して磁気記録媒体
を作成する場合、スプラッシュが発生して突起異物が生
じると、記録再生時に磁気ヘッドが突起異物に乗り上げ
て、磁気ヘッドと磁気記録媒体の隙間が大きくなり、正
常な記録再生ができないという重大な問題があった。
The droplets are called splash, and adhere to the substrate to become protrusion foreign matter. When a magnetic film is formed on a substrate to create a magnetic recording medium, if a splash occurs and a protruding foreign substance occurs, the magnetic head rides on the protruding foreign substance during recording and reproduction, and the gap between the magnetic head and the magnetic recording medium increases. However, there was a serious problem that normal recording and playback could not be performed.

そこで本発明者は、前記の急激な蒸発を防止してスプ
ラッシュを発生させない蒸着源を特願平1−118975号及
び特願平1−309681号において提案した。
Therefore, the present inventor proposed in Japanese Patent Application No. 1-118975 and Japanese Patent Application No. 1-309681 a vapor deposition source that prevents the above-mentioned rapid evaporation and does not generate a splash.

特願平1−118975号に記載のものは、第24図に示すよ
うに、補給用蒸着材料(棒材3)が供給される供給領域
Saと蒸発領域Eaとの間に仕切り部材25を坩堝2に固定い
て設けるものである。
As described in Japanese Patent Application No. 1-118975, as shown in FIG. 24, a supply region to which a supplementary vapor deposition material (bar material 3) is supplied.
A partition member 25 is fixedly provided to the crucible 2 between the Sa and the evaporation area Ea.

尚、第24図においては、第21図と同一構成要素は同一
番号にて示してある。
Incidentally, in FIG. 24, the same components as those in FIG. 21 are shown by the same numbers.

蒸着材料1がCo−Cr合金のような高融点金属の場合
は、仕切り部材25には坩堝2と同様にMgO等のセラミッ
クスが用いられる。
When the vapor deposition material 1 is a refractory metal such as a Co—Cr alloy, a ceramic such as MgO is used for the partition member 25 as in the crucible 2.

以上の構成により棒材3の溶液6は直接蒸発領域Eaの
液面4に流れ込まず、供給領域Saから仕切り部材25と坩
堝2の底面との隙間Cを通って蒸発領域Eaに拡散してCr
濃度が薄められた後、蒸発領域Eaの液面4に達するので
前記のような急激な蒸発が発生することはない。また、
前記の浮遊物3Aは仕切り部材25にせき止められて蒸発領
域Eaに流入しないので、前記のような急激な蒸発が発生
することはない。従ってスプラッシュの発生を防止でき
るものである。
With the above configuration, the solution 6 of the rod 3 does not directly flow into the liquid surface 4 of the evaporation area Ea, but diffuses from the supply area Sa to the evaporation area Ea through the gap C between the partition member 25 and the bottom surface of the crucible 2.
After the concentration is diluted, it reaches the liquid surface 4 in the evaporation area Ea, so that the rapid evaporation as described above does not occur. Also,
Since the suspended matter 3A is blocked by the partition member 25 and does not flow into the evaporation region Ea, the rapid evaporation as described above does not occur. Therefore, the generation of splash can be prevented.

しかしながらこの先行技術においても次の2つの点に
おいて改善が望まれる。
However, even in this prior art, improvement is desired in the following two points.

第1点は、蒸着材料1のインゴット(通常、円柱状あ
るいは直方体である)を坩堝に入れて電子ビームを照射
してインゴットを溶解するとき、インゴットから溶け出
した溶液が仕切り部材に接触した瞬間にセラミックスの
仕切り部材はヒートショックにより割れることがあるこ
とである。
The first point is that when the ingot of vapor deposition material 1 (usually a columnar or rectangular parallelepiped) is put in a crucible and the ingot is irradiated with an electron beam to dissolve the ingot, the moment when the solution melted from the ingot comes into contact with the partition member. The ceramic partition member may be cracked by heat shock.

第2点は、蒸着が終了して電子ビームをOFFすると蒸
着材料は凝固を始めるが、その凝固するときの収縮力に
より仕切り部材が破損し再使用できないことがあること
である。
The second point is that when the vapor deposition is completed and the electron beam is turned off, the vapor deposition material begins to solidify, but the contracting force at the time of solidification may damage the partition member and prevent reuse.

第1の点については、構造は複雑になるが仕切り部材
にヒータを組みこんで仕切り部材を予熱する事により解
決できるが、第2の点については有効な改善案が見あた
らない。
The first point can be solved by incorporating a heater into the partitioning member to preheat the partitioning member although the structure becomes complicated, but regarding the second point, there is no effective improvement plan.

特願平1−309681号に記載のものは、前記の先行技術
における課題を解決すべく発明されたもので、第25図に
第24図と同一構成要素は同一番号を付して示す。
The one described in Japanese Patent Application No. 1-309681 was invented in order to solve the above-mentioned problems in the prior art, and the same constituent elements as those in FIG. 24 are shown in FIG. 25 with the same reference numerals.

第25図において、35は仕切り部材25と同様にMgO等の
セラミックスで作成された蒸着材料導入管(以下導入管
と略す)である。31、32、33はそれぞれ導入管35を案内
する回転ローラ、34は駆動ローラである。駆動ローラ34
はモータ20と同様に設けられたモータ30に回転転動され
て、回転ローラ31との間に導入管35を挟み込んで矢印A
方向、あるいはその逆方向に駆動するものである。
In FIG. 25, like the partition member 25, 35 is a vapor deposition material introducing pipe (hereinafter abbreviated as introducing pipe) made of ceramics such as MgO. Reference numerals 31, 32, and 33 denote rotating rollers that guide the introducing pipe 35, and 34 denotes a driving roller. Drive roller 34
Is rotated by a motor 30 provided in the same manner as the motor 20, and the introduction pipe 35 is sandwiched between the rotation roller 31 and the arrow A.
Drive in the opposite direction or vice versa.

次に動作を説明する。インゴットが溶解した後、導入
管35をモータ30により、液面4の上方から矢印A方向
に、液面4からの輻射熱で導入管35の先端36を予熱しな
がら駆動する。従って液面4に導入管35の先端36が接触
したときヒートショックで導入管35が破損することはな
い。導入管35の先端36が第25図の所定の深さPfまで液面
4から挿入された後、棒材3をモータ20により矢印A方
向に送り、導入管35の内側を供給領域Saとする液面4に
棒材3を供給する。
Next, the operation will be described. After the ingot is melted, the introduction pipe 35 is driven by the motor 30 in the direction of arrow A from above the liquid surface 4 while preheating the tip 36 of the introduction pipe 35 by the radiant heat from the liquid surface 4. Therefore, when the tip 36 of the introduction pipe 35 comes into contact with the liquid surface 4, the introduction pipe 35 is not damaged by heat shock. After the tip end 36 of the introduction pipe 35 is inserted from the liquid level 4 to the predetermined depth Pf in FIG. 25, the rod 3 is sent in the direction of arrow A by the motor 20 to set the inside of the introduction pipe 35 as the supply area Sa. The bar 3 is supplied to the liquid surface 4.

蒸着が終了し、電子ビーム4AをOFFして蒸着材料1が
凝固する前に、モータ20および30により棒材3及び導入
管35を矢印Aと逆方向に駆動し、それぞれの先端5及び
36が液面4から離脱する位置までまで引き上げる。従っ
て、蒸着材料1の凝固時に導入管35が破損する事はな
い。
Before the vapor deposition is completed and the electron beam 4A is turned off to solidify the vapor deposition material 1, the rods 3 and the introduction tube 35 are driven by the motors 20 and 30 in the direction opposite to the arrow A, and the respective tips 5 and
Pull up to a position where 36 comes off the liquid surface 4. Therefore, the introduction pipe 35 is not damaged when the vapor deposition material 1 is solidified.

このようにすると、導入管35は特願平1−118975号に
おける仕切り部材25の役割を果たすことになり、棒材3
から溶けた溶液が直接蒸発領域Eaの液面4に流れ込むこ
ともまた前記浮遊物も蒸発領域Eaに流入することもな
い。
By doing so, the introducing pipe 35 will play the role of the partition member 25 in Japanese Patent Application No. 1-118975.
The dissolved solution does not flow directly into the liquid surface 4 of the evaporation region Ea, and the suspended matter does not flow into the evaporation region Ea.

従って、導入管35を破損させる事なく、スプラッシュ
の発生を防止することができる。
Therefore, it is possible to prevent the occurrence of splash without damaging the introduction pipe 35.

発明が解決しようとする課題 しかしながら、この後者の先行技術においても次のよ
うな改善すべき課題がある。
Problems to be Solved by the Invention However, the latter prior art also has the following problems to be improved.

導入管35内の液面から発生した蒸気が棒材3の表面及
び導入管35の内壁に付着し、棒材3と導入管35の隙間が
徐々に小さくなってついには棒材3と導入管35が固着す
るため、長時間に亘って材料供給が行えない事が問題で
あった。
The vapor generated from the liquid surface in the introduction pipe 35 adheres to the surface of the rod 3 and the inner wall of the introduction pipe 35, and the gap between the rod 3 and the introduction pipe 35 gradually becomes smaller until finally the rod 3 and the introduction pipe 35. Since 35 adheres, there is a problem that the material cannot be supplied for a long time.

そこで本発明は、スプラッシュを発生させる事も蒸発
領域と供給領域を仕切る部材を破損させることもなく、
長時間に亘って材料補強を行える真空蒸着源を提供し、
またこの真空蒸着源を用いて高い生産性にて蒸着した突
起異物欠陥の少ない安価な磁気記録媒体を提供すること
を目的とするものである。
Therefore, the present invention does not generate a splash or damage the member partitioning the evaporation region and the supply region,
We provide a vacuum evaporation source that can reinforce materials for a long time,
Another object of the present invention is to provide an inexpensive magnetic recording medium which has few protrusion foreign matter defects deposited with high productivity by using this vacuum deposition source.

課題を解決するための手段 そして上記課題を解決するため請求項1記載の発明
は、蒸着材料を収容する坩堝と、坩堝内の蒸着材料を加
熱、溶融し蒸発させる電子銃と、前記溶融した蒸着材料
の溶液の液面に補給用蒸着材料を供給する手段と、前記
電子銃によって電子ビームが照射される坩堝の蒸発領域
と、補給用蒸着材料が供給される供給領域との間の液面
に挿脱自在に支持部材により支持された仕切り部材と、
支持部材を介して仕切り部材を液面に挿脱駆動する駆動
手段とから成り、液面に挿入された仕切り部材の上面は
少なくとも液面より突出し、下面は坩堝底面との間に蒸
発領域と供給領域の溶液が流通するすき間を設けて成る
真空蒸着源である。
Means for Solving the Problems And, in order to solve the above problems, the invention according to claim 1 is a crucible for containing a vapor deposition material, an electron gun for heating, melting and evaporating a vapor deposition material in a crucible, and the molten vapor deposition. A means for supplying a replenishment evaporation material to the liquid surface of the material solution, an evaporation region of the crucible irradiated with an electron beam by the electron gun, and a liquid surface between the supply region to which the replenishment evaporation material is supplied. A partition member supported by a support member so that it can be inserted and removed,
The partition member, which is inserted into and removed from the liquid surface via a support member, is driven so that the upper surface of the partition member inserted into the liquid surface projects at least from the liquid surface, and the lower surface supplies the evaporation region between the bottom surface and the crucible bottom surface. It is a vacuum evaporation source provided with a gap through which the solution in the region flows.

請求項9記載の発明は、請求項1記載の真空蒸着源に
より、Co,Crを主成分とする磁性膜を基板に蒸着して成
る磁気記録媒体である。
A ninth aspect of the present invention is a magnetic recording medium obtained by vapor-depositing a magnetic film containing Co and Cr as main components on a substrate by the vacuum vapor deposition source according to the first aspect.

作 用 請求項1記載の発明は上記構成により、スプラッシュ
の発生と、仕切り部材の破損を防止し、しかも仕切り部
材と補強用蒸着材料は充分離間させられるので両者が固
着する事を防止して長時間に亘る材料供給を可能とする
事ができる。従って、スプラッシュによる突起異物の無
い薄膜を高い生産性で蒸着する事ができる。
According to the invention described in claim 1, with the above-described structure, the occurrence of splash and the damage of the partition member are prevented, and furthermore, the partition member and the vapor deposition material for reinforcement are sufficiently separated from each other to prevent them from sticking to each other. It is possible to supply the material over time. Therefore, it is possible to vapor-deposit a thin film having no projection foreign matter due to splash with high productivity.

請求項9記載の発明は上記したように、スプラッシュ
による突起異物の無い、しかも高い生産性ゆえに安価な
磁気記録媒体を実現することができる。
As described above, the invention according to claim 9 can realize an inexpensive magnetic recording medium free from projection foreign matter due to splash and high in productivity.

実施例 以下、本発明の実施例を添付図面に基づいて説明す
る。尚、従来と同一構成要素は従来例と同一番号で示す
ものである。第1図は本発明の第1実施例を示す斜視図
であり、第2図は第1図のK−Ka位置における断面図で
ある。
Embodiment An embodiment of the present invention will be described below with reference to the accompanying drawings. The same components as those of the conventional example are indicated by the same numbers as those of the conventional example. 1 is a perspective view showing a first embodiment of the present invention, and FIG. 2 is a sectional view taken along the line K-Ka in FIG.

第1図において、70は、電子ビーム7Aを発生させ、必
要に応じてその電子ビーム7Aを走査する公知の偏向手段
を備えた電子銃である。
In FIG. 1, 70 is an electron gun equipped with a known deflecting means for generating an electron beam 7A and scanning the electron beam 7A as required.

第1図、第2図において、50は前記と同様にMgO等の
セラミックスで作成された仕切り部材で、その両端部5
1、52はレバー53、54の先端部の角孔53H、54Hに挿入さ
れて支持されている。両端部51、52は、レバー53、54を
矢印B,Ba方向にたわませる事により、容易に角孔53H、5
4Hに挿入する事ができる。55、56は軸で、ハース40に植
立され、レバー53、54を回動自在に支持する。57はT字
形レバーで、ネジ58はよりレバー53、54に固着されてい
る。59はモータで、ハース40にネジ60により固定された
プラケッ61に取り付けられている。62はピニオンで、モ
ータ59のシャフト63に固定され、ラック64と噛み合う。
65はバックアップローラで、プラケット61に植立された
軸66に回転自在に支持され、ラック64に当接してラック
64と、ピニオン62の噛み合いを維持する。67は軸で、ラ
ック64に直立され、T字形レバー57に回動自在に係合す
る。
In FIG. 1 and FIG. 2, 50 is a partition member made of ceramics such as MgO similar to the above, and both ends 5 thereof.
1, 52 are inserted into and supported by the square holes 53H, 54H at the tips of the levers 53, 54. Both ends 51, 52 can be easily bent into the square holes 53H, 5 by bending the levers 53, 54 in the directions of arrows B and Ba.
Can be inserted in 4H. 55 and 56 are shafts, which are erected on the hearth 40 and rotatably support the levers 53 and 54. 57 is a T-shaped lever, and a screw 58 is further fixed to the levers 53 and 54. Reference numeral 59 is a motor, which is attached to a racket 61 fixed to the hearth 40 with screws 60. A pinion 62 is fixed to the shaft 63 of the motor 59 and meshes with the rack 64.
Reference numeral 65 is a backup roller, which is rotatably supported by a shaft 66 erected on the placket 61 and abuts against the rack 64 so that the rack
The engagement between 64 and the pinion 62 is maintained. 67 is a shaft, which is erected on the rack 64 and is rotatably engaged with the T-shaped lever 57.

次に動作を説明する。 Next, the operation will be described.

第3図は上記実施例の真空蒸着源の初期状態を示す図
である。初期状態においてはラック64は第2図に示す位
置よりも下方に位置する。従ってレバー57は第2図から
軸55、56を中心に反時計方向に回動した位置にあり、仕
切り部材50は第2図よりも上方に位置することにある。
この時、軸63と66を結ぶ線とラック64の軸線とのなす角
αは90゜からずれ、ラック64は軸63と66の間隔を押し広
げるよう作用するが、押し広げる距離をΔGとするとΔ
Gは極わずかであるので、あらかじめ軸63と66の間隔を
ΔG広く設定しておけば各要素に大きな力が生じる事な
く良好に動作させることができる。
FIG. 3 is a view showing the initial state of the vacuum vapor deposition source of the above embodiment. In the initial state, the rack 64 is located below the position shown in FIG. Therefore, the lever 57 is located in a position rotated counterclockwise about the shafts 55 and 56 from FIG. 2, and the partition member 50 is located above that in FIG.
At this time, the angle α formed by the line connecting the shafts 63 and 66 and the axis of the rack 64 deviates from 90 °, and the rack 64 acts to widen the gap between the shafts 63 and 66. Δ
Since G is extremely small, if the interval between the shafts 63 and 66 is set to be wide by ΔG in advance, it is possible to operate the elements satisfactorily without generating a large force.

また、この時棒材3の先端5も第2図よりも上方に後
退した位置にある。
At this time, the tip 5 of the bar 3 is also in a position retracted upward from FIG.

21は坩堝2と基板8のの間に設けられた公知のシャッ
タである。
Reference numeral 21 is a known shutter provided between the crucible 2 and the substrate 8.

仕切り部材50と、棒材3が第3図に示す状態にある
時、第4図に示すように電子ビーム7Aを坩堝2に収容さ
れたインゴット状の蒸着材料1Aに照射し、溶融する。イ
ンゴット状の蒸着材料1Bには電子ビーム7Aは放射されな
いが、インゴット状の蒸着材料1Aから溶け出した溶液1C
からの熱伝達により溶融する。そしてインゴット状の蒸
着材料1A,1Bは共に溶融して第3図に示す蒸着材料1の
溶液となる。
When the partition member 50 and the bar 3 are in the state shown in FIG. 3, the electron beam 7A is applied to the ingot-shaped vapor deposition material 1A housed in the crucible 2 and melted as shown in FIG. The electron beam 7A is not emitted to the ingot-shaped vapor deposition material 1B, but the solution 1C dissolved from the ingot-shaped vapor deposition material 1A
It is melted by heat transfer from. Then, the ingot-shaped vapor deposition materials 1A and 1B are melted together to form a solution of the vapor deposition material 1 shown in FIG.

この溶融過程において、仕切り部材50は液面4よりも
上方に位置しているので、インゴット状の蒸着材料1A,1
Bから溶け出した溶液1Cが仕切り部材50に接触してヒー
トショックにより仕切り部材50を破損させることはな
い。また基板8はシャッタ21により坩堝2から遮られて
いるので、この溶融過程において蒸着材料1から蒸発す
る蒸気が付着して基板8に不要な膜が形成されることは
ない。
In this melting process, since the partition member 50 is located above the liquid surface 4, the ingot-shaped vapor deposition materials 1A, 1
The solution 1C dissolved from B does not contact the partition member 50 and damage the partition member 50 due to heat shock. Further, since the substrate 8 is shielded from the crucible 2 by the shutter 21, the vapor evaporated from the vapor deposition material 1 does not adhere to the substrate 8 to form an unnecessary film during the melting process.

次に、モータ59の駆動し、ピニオン62を反時計方向に
回転せしめてラック64とレバー57を介して仕切り部材50
を蒸着材料1の液面4に向かって降下させる。降下速度
は、仕切り部材50が液面4からの輻射熱で充分予熱され
る速度(この速度をV1とする)としてあるので、仕切り
部材50が液面4に接したときヒートショックにより仕切
り部材50が破損する事はない。仕切り部材50が液面4に
接した後、さらに第2図に示す所定の深さまでモータ59
を駆動して降下させる。仕切り部材50が液面4に接した
後はV1よりも高速で降下させても何等支承は無く、そう
することにより時間を節約することができる。
Next, the motor 59 is driven to rotate the pinion 62 counterclockwise to move the partition member 50 through the rack 64 and the lever 57.
To the liquid surface 4 of the vapor deposition material 1. The descending speed is set to a speed at which the partition member 50 is sufficiently preheated by the radiant heat from the liquid surface 4 (this speed is V1). Therefore, when the partition member 50 comes into contact with the liquid surface 4, the partition member 50 is heat-shocked. It will not be damaged. After the partition member 50 contacts the liquid surface 4, the motor 59 is further moved to a predetermined depth shown in FIG.
Drive to lower. After the partition member 50 comes into contact with the liquid surface 4, there is no support even if the partition member 50 is lowered at a speed higher than V1, and by doing so, time can be saved.

次にモータ20により棒材3を矢印A方向に駆動して蒸
着材料の補給を行い、シャッタ21を開いて基板8へ蒸着
を行う。
Next, the rod material 3 is driven by the motor 20 in the direction of arrow A to replenish the vapor deposition material, the shutter 21 is opened, and vapor deposition is performed on the substrate 8.

仕切り部材50は、第24図の仕切り部材25と同様に、棒
材3の溶液6が直接蒸発領域Eaに流入する事及び、浮遊
物3Aが蒸発領域Eaに流入する事を妨げるのでスプラッシ
ュの発生を防止する事ができる。
Similar to the partition member 25 of FIG. 24, the partition member 50 prevents the solution 6 of the rod 3 from directly flowing into the evaporation area Ea and the suspended matter 3A from flowing into the evaporation area Ea, so that a splash is generated. Can be prevented.

蒸着が終了した後、モータ59を駆動し、ピニオン62を
時計方向に回転せしめてラック64とレバー57を介して仕
切り部材50を上方へ駆動し、第3図に示すように再び蒸
着材料1の液面4から仕切り部材50を離間させる。
After the vapor deposition is completed, the motor 59 is driven to rotate the pinion 62 in the clockwise direction to drive the partition member 50 upward via the rack 64 and the lever 57, and as shown in FIG. The partition member 50 is separated from the liquid surface 4.

この時、第5図に示すように坩堝2の液面4より上方
の内面2Aと,その内面2Aと遊嵌する仕切り部材50の嵌合
面50Aの間に、液面4から蒸発した蒸気が付着する。そ
の付着した蒸気が液化した状態であれば問題無く仕切り
部材50を上方へ駆動できる。しかながら坩堝2の内面2A
の温度が低い場合は、蒸気が固化し仕切り部材50は坩堝
内面2Aに固着されることになり、仕切り部材50を上方へ
駆動できなくなる。
At this time, as shown in FIG. 5, between the inner surface 2A above the liquid surface 4 of the crucible 2 and the fitting surface 50A of the partition member 50 loosely fitted to the inner surface 2A, the vapor evaporated from the liquid surface 4 is generated. Adhere to. If the attached vapor is liquefied, the partition member 50 can be driven upward without any problem. However, the inner surface 2A of the crucible 2
When the temperature is low, the vapor is solidified and the partition member 50 is fixed to the inner surface 2A of the crucible, so that the partition member 50 cannot be driven upward.

このような場合はモータ59により、仕切り部材50に上
方への駆動力を与えつつ、第6図に示すように電子ビー
ム7Aを仕切り部材50に沿って矢印F方向に走査させて仕
切り部材50の嵌合面50A近傍の液面4Aに電子ビーム7Aを
照射し、液面4Aを高温に加熱して液面4Aからの熱伝導に
より固化した蒸気1Dを溶融すれば仕切り部材50を上方へ
駆動する事ができるようになる。
In such a case, the motor 59 applies an upward driving force to the partition member 50, and the electron beam 7A is scanned along the partition member 50 in the direction of arrow F as shown in FIG. The partition surface 50 is driven upward by irradiating the liquid surface 4A near the fitting surface 50A with the electron beam 7A, heating the liquid surface 4A to a high temperature, and melting the vapor 1D which is solidified by heat conduction from the liquid surface 4A. You will be able to do things.

仕切り部材50を上方へ駆動して液面4から離間させた
後、電子ビーム7AをOFFすれば蒸着材料1が凝固すると
きに仕切り部材50が破損することはないので仕切り部材
50の再使用が可能となる。
If the electron beam 7A is turned off after the partition member 50 is driven upward to separate it from the liquid surface 4, the partition member 50 will not be damaged when the vapor deposition material 1 is solidified.
50 can be reused.

次に第2図において仕切り部材50と坩堝2の隙間Cの
設定方法について説明する。隙間Cが過小な場合は、蒸
発領域Eaから供給領域Saに隙間Cを通して熱が伝わりに
くくなるので供給領域Saの温度が低下し棒材3が良好に
溶融しなくなり、棒材3の先端5が仕切り部材50に当た
って仕切り部材50を破損させることになる。逆に隙間C
が過大な場合は、棒材3の溶液6のCr濃度が充分薄めら
れる前に蒸発領域Eaに流入する事になり、スプラッシュ
防止効果が小さくなる。スプラッシュ防止のためには、
液面4の高さをHとすると、C/Hは少なくとも9/10以
下、可能であれば4/5以下が望ましい。
Next, a method of setting the clearance C between the partition member 50 and the crucible 2 in FIG. 2 will be described. If the gap C is too small, heat is less likely to be transferred from the evaporation region Ea to the supply region Sa through the gap C, so that the temperature of the supply region Sa decreases and the rod 3 does not melt well, and the tip 5 of the rod 3 is The partition member 50 will be damaged by hitting the partition member 50. Conversely, the gap C
When is too large, the Cr concentration of the solution 6 of the rod 3 flows into the evaporation region Ea before being sufficiently diluted, so that the splash preventing effect becomes small. To prevent splash,
When the height of the liquid surface 4 is H, C / H is preferably at least 9/10 or less, and if possible, 4/5 or less.

C/Hを望ましい値としたときに、供給領域Saの温度を
低くなり、棒材3が良好に溶融しない場合は、ハース40
に形成されている供給領域Sa近傍の冷却水流路41Aを無
くし、供給領域Sa近傍の坩堝2の外面を蒸発領域Eaのそ
れの外面よりも断熱された状態とするが、あるいは流路
41Aを細くすればよい。
When C / H is set to a desired value, the temperature of the supply area Sa becomes low, and if the bar 3 does not melt well, the hearth 40
The cooling water passage 41A formed in the vicinity of the supply area Sa is eliminated, and the outer surface of the crucible 2 near the supply area Sa is insulated more than that of the evaporation area Ea.
41A should be thin.

または、図示しないが供給領域Sa近傍の坩堝2の外面
とケース42の間に断熱材を設けてもよい。
Alternatively, although not shown, a heat insulating material may be provided between the case 42 and the outer surface of the crucible 2 near the supply area Sa.

棒材3の融点が低い、融解熱が小さい場合等には上記
とは逆に棒材3の先端5は矢印A方向の供給速度よりも
早い速度で溶け上がる。この場合の棒材3の先端5の挙
動を第7図、第8図、第9図第10図に基づいて説明す
る。
When the melting point of the bar 3 is low, the heat of fusion is small, and the like, the tip 5 of the bar 3 melts at a speed faster than the supply speed in the direction of arrow A, contrary to the above. The behavior of the tip 5 of the bar 3 in this case will be described with reference to FIGS. 7, 8 and 9 and 10.

第7図は棒材3の先端5が液面4に接した瞬間の図
で、この瞬間を状態aとする。この状態aにおいて先端
5は液面4から熱を吸収して溶融を始め、溶液6となっ
て第8図に示す状態bの矢印Rのように蒸着材料1の溶
液に溶け込む。この時矢印Rと逆方向に熱が先端5に伝
わり先端5の溶融が進む。溶融が進につれて液面4と棒
材3の先端5の距離gが長くなるので液面4からの熱が
先端5に伝わりにくくなり、第9図の状態cのように先
端5の溶融量が減少して溶液6の量が少なくなる。そう
するとますます先端5は溶融しにくくなってついには第
10図の状態dのように溶融が停止する。
FIG. 7 is a view at the moment when the tip 5 of the bar 3 comes into contact with the liquid surface 4, and this moment is referred to as a state a. In this state a, the tip 5 absorbs heat from the liquid surface 4 and starts melting, and becomes a solution 6, which melts into the solution of the vapor deposition material 1 as indicated by the arrow R in the state b shown in FIG. At this time, heat is transferred to the tip 5 in the direction opposite to the arrow R and the melting of the tip 5 proceeds. As the melting progresses, the distance g between the liquid surface 4 and the tip 5 of the bar 3 becomes longer, so that the heat from the liquid surface 4 is less likely to be transferred to the tip 5, and the amount of melting of the tip 5 as in state c in FIG. The amount of the solution 6 decreases and the amount of the solution 6 decreases. Then, the tip 5 becomes more difficult to melt and finally
Melting stops as in state d in FIG.

この間棒材3は矢印A方向に連続して送られているが
その速さよりも状態aから状態dまでの先端5の溶融速
度の方が速いので状態dのようにスキマDが生じること
になる。そして連続して棒材3が送られてくるので時間
が経過するにつれてスキマDが小さくなってついには状
態aとなり、順次以上のサイクルが繰り返されることに
なる。すなわち棒材3の送りは連続であっても液面4へ
の棒材3の供給は間欠的なものとなる。
During this time, the bar 3 is continuously fed in the direction of the arrow A, but the melting speed of the tip 5 from the state a to the state d is faster than the speed thereof, so that a gap D occurs as in the state d. . Since the bar 3 is continuously fed, the clearance D becomes smaller as time passes and finally the state becomes the state a, and the above cycle is repeated. That is, even if the bar 3 is continuously fed, the bar 3 is supplied to the liquid surface 4 intermittently.

先端5が液面に溶け込んでいる間は液面4から熱を奪
うので供給領域Saの液面4の温度が低下する。その温度
低下は隙間Cを通して蒸発領域Eaに伝わり、蒸発領域Ea
の液面4の温度を低下させる。
While the tip 5 is melting in the liquid surface, heat is taken from the liquid surface 4, so that the temperature of the liquid surface 4 in the supply area Sa decreases. The temperature decrease is transmitted to the evaporation area Ea through the gap C, and the evaporation area Ea
And lowers the temperature of the liquid surface 4.

そうすると蒸発速度が低下することになり、蒸発速度
は第11図に示すように時間経過と共に状態aから状態d
の変化を周期として変動することになる。状態dの距離
Dは棒材3が太くなるほど大きくなる。その理由は溶液
6を略円柱とした場合、円柱が太くなるほど、円柱表面
積/円柱容積の比の値が小さくなるので液面4から先端
5へ溶液6を通って伝わる熱量に対して円柱表面から輻
射で逃げる熱量の割合が少なくなってより長く溶融する
ためである。従って棒材が太くなると第11図の周期TL
び蒸発速度の変動幅HL共に大きくなる。
Then, the evaporation rate decreases, and the evaporation rate changes from the state a to the state d with the lapse of time as shown in FIG.
It will fluctuate with the change of. The distance D in the state d increases as the rod 3 becomes thicker. The reason is that when the solution 6 is formed into a substantially cylindrical shape, the thicker the cylindrical shape, the smaller the ratio of the surface area / cylinder volume of the cylindrical shape becomes. Therefore, the amount of heat transferred from the liquid surface 4 to the tip 5 through the solution 6 from the cylindrical surface This is because the proportion of the amount of heat that escapes due to radiation decreases and the material melts longer. Therefore, as the bar becomes thicker, both the period T L and the fluctuation range H L of the evaporation rate in FIG. 11 increase.

また、この時、蒸着材料1よりもCr濃度の高い棒材3
が溶液6となって間欠的に供給領域Saの液面4に溶け込
む。供給領域Saの間欠的なCr濃度変化は隙間Cを通して
蒸発領域Eaに伝わり、蒸発領域Eaから蒸発する蒸気のCr
濃度が第11図に示す蒸発速度と同様に周期的に変化する
ことになる。
At this time, the bar material 3 having a Cr concentration higher than that of the vapor deposition material 1
Becomes a solution 6 and intermittently dissolves in the liquid surface 4 of the supply area Sa. Intermittent changes in the Cr concentration in the supply area Sa are transmitted to the evaporation area Ea through the gap C, and the Cr content of the vapor evaporated from the evaporation area Ea is increased.
The concentration changes periodically like the evaporation rate shown in FIG.

蒸発速度及び蒸気中のCr濃度が変動すると、坩堝2の
上方を前記フィルム等の基板8を図面に垂直方向に移動
させながら蒸着するいわゆる通過製膜するときに、通過
方向の膜厚及び組成比が変動するという問題が生じる。
When the evaporation rate and the Cr concentration in the vapor fluctuate, the film thickness and the composition ratio in the passage direction are set when vapor deposition is performed while moving the substrate 8 of the film or the like above the crucible 2 in the direction perpendicular to the drawing. Fluctuates.

上記のような間欠的な溶融が発生する場合は、上記C/
Hを小さくして供給領域Saの温度を適切な温度まで下げ
れば棒材3を供給する速度と、棒材3が液面4に接して
溶融する速度が略等しくなって、常に棒材3の先端5と
液面4が溶液6でつながった状態、即ち状態bから状態
cの間の状態を維持しつつ連続的な供給を実現する事が
できる。
If intermittent melting as described above occurs, use the above C /
If H is decreased and the temperature of the supply area Sa is lowered to an appropriate temperature, the speed at which the bar 3 is supplied becomes substantially equal to the speed at which the bar 3 comes into contact with the liquid surface 4 and melts. It is possible to realize continuous supply while maintaining the state in which the tip 5 and the liquid surface 4 are connected by the solution 6, that is, the state between the state b and the state c.

次に第5図における仕切り部材50の液面4からの突出
高さHgの値について第12図、第13図、第14図、第15図、
第16図を用いて説明する。
Next, regarding the value of the protrusion height Hg from the liquid surface 4 of the partition member 50 in FIG. 5, FIG. 12, FIG. 13, FIG. 14, FIG.
This will be described with reference to FIG.

第12図において、1Eは液面4から蒸発して坩堝2の内
面2A及び仕切り部材50の側面50Aに付着した付着蒸気で
ある。この蒸気1Eが付着した面の温度が高い場合に蒸気
1Eは液滴となり、温度が低い場合は固体となる。第13図
に示すように時間経過と共に付着蒸気1Eの量は多くな
り、それが液滴の場合は、限界まで大きくなれば重力に
より液面4に落下する。それが固体の場合は、第14図に
示すように限界まで大きくなれば液面4との接触面1Ec
が溶融し、第15図、第16図の順に棒材3が液面4に接し
て溶融するのする場合と同様に液面4からの熱伝導によ
り溶け上がり、付着蒸気1Eのほとんどが液面4に溶融す
る。
In FIG. 12, 1E is vapor deposited from the liquid surface 4 and attached to the inner surface 2A of the crucible 2 and the side surface 50A of the partition member 50. If the temperature of the surface to which this steam 1E adheres is high, steam
1E becomes a droplet and becomes solid when the temperature is low. As shown in FIG. 13, the amount of the attached vapor 1E increases with the passage of time, and when it is a droplet, when it reaches the limit, it falls on the liquid surface 4 due to gravity. If it is a solid, contact surface 1Ec with liquid level 4 if it reaches the limit as shown in Fig. 14
Is melted and melted by heat conduction from the liquid surface 4 in the same manner as in the case where the bar 3 comes into contact with the liquid surface 4 and melts in the order shown in FIGS. 15 and 16, and most of the attached vapor 1E is on the liquid surface. Melt to 4.

以上の現象が発生すると、付着蒸気IEは蒸着材料1よ
りもCrを多く含んでいるので液面4のCr含有量が増加
し、それに伴い液面4から発生する蒸気のCr含有量が増
加するので膜9のCr含有量も増加し、膜9の組成比が変
動することになる。この変動を小さくするためには、第
5図、第12図に示す液面4から坩堝2の上端面2Bまでの
高さHc及び液面4からの仕切り部材50の突出高さHgを低
くして付着蒸気1Eの付着量を少なくすればよい。従って
Hcを蒸着材料1が坩堝2の外へこぼれない限界まで低く
し、Hgを略Hcと同一とすれば上記現象に伴う組成比の変
動を最も小さくすることができる。仕切り部材50の坩堝
内面2A近傍においては、構造上Hgが高くなることは避け
られないが、長さWgは全長Waに比較して小さいので組成
比変動への影響は小さい。
When the above phenomenon occurs, the attached vapor IE contains more Cr than the vapor deposition material 1, so the Cr content of the liquid level 4 increases, and the Cr content of the vapor generated from the liquid level 4 increases accordingly. Therefore, the Cr content of the film 9 also increases, and the composition ratio of the film 9 changes. In order to reduce this fluctuation, the height Hc from the liquid surface 4 to the upper end surface 2B of the crucible 2 and the protruding height Hg of the partition member 50 from the liquid surface 4 shown in FIGS. Therefore, the amount of the attached vapor 1E may be reduced. Therefore
If Hc is lowered to the limit at which the vapor deposition material 1 does not spill out of the crucible 2 and Hg is made to be substantially the same as Hc, the fluctuation of the composition ratio due to the above phenomenon can be minimized. In the vicinity of the inner surface 2A of the crucible of the partition member 50, it is unavoidable that Hg becomes high due to the structure, but since the length Wg is smaller than the total length Wa, the influence on the composition ratio fluctuation is small.

蒸着源を以上の構成とすることにより、スプラッシュ
の発生と、仕切り部材の破損を防止し、しかも仕切り部
材と補給用蒸着材料は充分離間させられるので両者が固
着する事を防止して長時間に亘る材料供給を可能とする
事ができる。従って、スプラッシュによる突起異物の無
い薄膜を高い生産性で蒸着する事ができる。
By configuring the vapor deposition source as described above, it is possible to prevent the occurrence of splash and damage to the partition member, and also to prevent the partition member and the replenishment vapor deposition material from being sufficiently separated from each other to prevent them from sticking to each other for a long time. It is possible to supply materials throughout. Therefore, it is possible to vapor-deposit a thin film having no projection foreign matter due to splash with high productivity.

また、以上の構成の蒸着源を用いることにより、スプ
ラッシュによる突起物の無い、しかも高い生産性で磁性
膜を蒸着する事ができるので安価な蒸気記録媒体を実現
することができる。
Further, by using the vapor deposition source having the above structure, a magnetic film can be vapor-deposited with high productivity without protrusions due to splash, and thus an inexpensive vapor recording medium can be realized.

次に本発明の第2実施例について説明する。 Next, a second embodiment of the present invention will be described.

第17図、第18図は、本発明の第2実施例を示す図で、
第1図、第2図と同一構成要素は同一番号にて示すもの
である。
17 and 18 are views showing a second embodiment of the present invention,
The same components as those in FIGS. 1 and 2 are designated by the same reference numerals.

本構成の特徴は、仕切り部材50の中央部を環状部材50
Cとしたことにある。この構成においては、供給領域Sa
はその環状部材50Cの内側の領域となるので、第1図、
第2図の構成のように仕切り部材50と坩堝2で液面4を
閉じて供給領域Saを構成する必要はない。従って、仕切
り部材と50と坩堝2を遊嵌させる必要は無いので前記の
ように遊嵌部に蒸気が付着して仕切り部材50か坩堝2に
固着されることは無くなり、容易に仕切り部材50を上方
へ駆動して液面4から離間させることができる。
The feature of this configuration is that the central portion of the partition member 50 is an annular member 50.
It is in C. In this configuration, the supply area Sa
Is an area inside the annular member 50C, so that FIG.
It is not necessary to form the supply area Sa by closing the liquid surface 4 with the partition member 50 and the crucible 2 as in the configuration of FIG. Therefore, since it is not necessary to loosely fit the partition member 50 and the crucible 2 to each other, it is possible to prevent the steam from adhering to the loose fitting portion and being fixed to the partition member 50 or the crucible 2 as described above. It can be driven upward and separated from the liquid surface 4.

この構成においても供給領域Saの温度が低くなり、棒
材3が良好に溶融しない場合は、前記と同様な方法で供
給領域Sa近傍の坩堝2の外面を蒸発領域Eaのそれの外面
よりも断熱された状態とすればよい。
Also in this configuration, if the temperature of the supply area Sa becomes low and the bar 3 does not melt well, the outer surface of the crucible 2 near the supply area Sa is insulated from the outer surface of the evaporation area Ea in the same manner as described above. It should be in a state where it has been.

第19図は本発明の第3実施例を示す図で、第1図、第
2図と同一構成要素は同一番号にて示すものである。
FIG. 19 is a diagram showing a third embodiment of the present invention, in which the same components as those in FIGS. 1 and 2 are designated by the same reference numerals.

供給領域Saの液面4には直接電子ビーム7Aが照射され
ないのでその液面4の温度は低い。従って、その液面4
からの蒸発は少ないが、供給領域Saから発生する蒸気の
Cr濃度は高いので、第19図の基板8に形成される膜9の
右方のCr濃度が高くなる傾向にある。これが問題となる
場合は、第19図に示すように供給領域Saと基板8の間に
遮蔽板80を設け、供給領域Saから発生する蒸気が基板8
に付着しにくくなるようにすればよい。
Since the liquid surface 4 of the supply area Sa is not directly irradiated with the electron beam 7A, the temperature of the liquid surface 4 is low. Therefore, the liquid level 4
From the supply area Sa
Since the Cr concentration is high, the Cr concentration on the right side of the film 9 formed on the substrate 8 in FIG. 19 tends to be high. If this becomes a problem, a shielding plate 80 is provided between the supply area Sa and the substrate 8 as shown in FIG.
It should be made difficult to adhere to.

第20図は本発明の第4実施例を示す図で、第19図と同
一構成要素は同一番号にて示すものである。
FIG. 20 is a diagram showing a fourth embodiment of the present invention, in which the same components as in FIG. 19 are designated by the same reference numerals.

第1図、第2図の構成において、供給領域Saの液面4
の温度が棒材3の融点に対してあまり高くならない場合
は、前記したように棒材3が良好に溶融しなくなり、棒
材3の先端5が仕切り部材50に当たって仕切り部材50を
破損させることになる。これを防止するための一つの方
法を第20図に示す。第20図において、7Bは電子ビーム
で、棒材3の先端5に照射することによって先端5を溶
融して溶液6とし、それを液滴6Bとして供給領域Saの液
面4に滴下させるものである。この様にすると上記の条
件においても容易に蒸着材料を補給することが出来るの
で高融点材料の場合に有効な方法である。
In the configuration of FIGS. 1 and 2, the liquid level 4 in the supply area Sa
If the temperature of 3 does not become too high with respect to the melting point of the bar 3, as described above, the bar 3 will not melt well, and the tip 5 of the bar 3 will hit the partition member 50 and damage the partition member 50. Become. One method for preventing this is shown in FIG. In FIG. 20, 7B is an electron beam, which irradiates the tip 5 of the bar 3 to melt the tip 5 into a solution 6 which is dropped as a droplet 6B onto the liquid surface 4 of the supply area Sa. is there. In this way, the vapor deposition material can be easily replenished even under the above-mentioned conditions, which is an effective method in the case of a high melting point material.

以上すべて補強用蒸着材料は棒材として説明したが、
棒材に限るものでなく、ワイヤ状、粒状等他の形状であ
ってもよい。
Although the vapor deposition material for reinforcement has been described as a bar material in all of the above,
The material is not limited to the rod material, and may have other shapes such as a wire shape and a granular shape.

発明の効果 以上、本発明によれば、スプラッシュを発生させる事
も蒸発領域と供給領域を仕切る部材を破損させることも
なく、長時間に亘って材料補強を行える真空蒸着源が実
現でき、またこの真空蒸着源を用いる事により高い生産
性にて突起異物欠陥の少ない安価な磁気記録媒体を提供
することができるもので、産業上大なる効果を有する。
EFFECTS OF THE INVENTION As described above, according to the present invention, it is possible to realize a vacuum vapor deposition source that can reinforce materials for a long time without causing a splash or damaging a member that separates an evaporation region and a supply region. By using a vacuum evaporation source, it is possible to provide an inexpensive magnetic recording medium with few protrusion foreign matter defects with high productivity, which has a great industrial effect.

【図面の簡単な説明】[Brief description of drawings]

第1図は、本発明の第1実施例における真空蒸着源の概
略構成を示す斜視図、第2図は第1図のK−Ka縦断面
図、第3図は第1図のK−Ka縦断面図を用いて示した動
作説明図、第4図は第1図のK−Ka縦断面におけるイン
ゴット溶融初期状態説明図、第5図は第1図のL−La縦
断面図、第6図は斜視図で示す動作説明図、第7図、第
8図、第9図、第10図はそれぞれ第2図の要部拡大図、
第11図は、蒸発速度変動図、第12図、第13図、第14図、
第15図、第16図はそれぞれ第2図の要部拡大図、第17図
は、本発明の第2実施例を示す斜視図、第18図は第17図
のN−Na縦断面図、第19図は本発明の第3実施例を示す
縦断面図、第20図は本発明の第4実施例を示す縦断面
図、第21図は従来の蒸着源の縦断面図、第22図、第23図
はそれぞれ第21図の要部拡大図、第24図、第25図は、共
に本出願人による先行技術を示す縦断面図である。 1……蒸着材料、2……坩堝、3……棒材、4……液
面、7A……電子ビーム、8……基板、9……薄膜、14…
…駆動ローラ、20、59……モータ、50……仕切部材、5
3、54……レバー、55、56、67……軸、57……T字形レ
バー、62……ピニオン、65……バックアップローラ、70
……電子銃、Ea……蒸発領域、Sa……供給領域、C……
仕切り部材50と坩堝2の底面との隙間。
FIG. 1 is a perspective view showing a schematic structure of a vacuum vapor deposition source in a first embodiment of the present invention, FIG. 2 is a vertical sectional view taken along the line K-Ka in FIG. 1, and FIG. 3 is a line taken along the line K-Ka in FIG. Operation explanatory drawing shown using a longitudinal sectional view, FIG. 4 is an explanatory drawing of the initial state of ingot melting in the K-Ka longitudinal section of FIG. 1, and FIG. 5 is an L-La longitudinal sectional view of FIG. The figure is a motion explanatory view shown in a perspective view, FIG. 7, FIG. 8, FIG. 9 and FIG.
FIG. 11 is an evaporation rate fluctuation diagram, FIG. 12, FIG. 13, FIG.
FIGS. 15 and 16 are enlarged views of the main parts of FIG. 2, FIG. 17 is a perspective view showing a second embodiment of the present invention, and FIG. FIG. 19 is a vertical sectional view showing a third embodiment of the present invention, FIG. 20 is a vertical sectional view showing a fourth embodiment of the present invention, FIG. 21 is a vertical sectional view of a conventional vapor deposition source, and FIG. FIG. 23 is an enlarged view of an essential part of FIG. 21, and FIGS. 24 and 25 are vertical sectional views showing prior art by the applicant. 1 ... Evaporation material, 2 ... Crucible, 3 ... Rod, 4 ... Liquid level, 7A ... Electron beam, 8 ... Substrate, 9 ... Thin film, 14 ...
… Drive roller, 20, 59 …… Motor, 50 …… Partition member, 5
3, 54 …… Lever, 55, 56, 67 …… Shaft, 57 …… T-shaped lever, 62 …… Pinion, 65 …… Backup roller, 70
…… Electron gun, Ea …… Evaporation area, Sa …… Supply area, C ……
A gap between the partition member 50 and the bottom of the crucible 2.

───────────────────────────────────────────────────── フロントページの続き (72)発明者 児玉 佳代子 大阪府門真市大字門真1006番地 松下電 器産業株式会社内 (56)参考文献 特開 昭57−169088(JP,A) 特開 昭60−116769(JP,A) 特開 昭64−21072(JP,A) 特開 平2−23525(JP,A) ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Kayoko Kodama 1006 Kadoma, Kadoma City, Osaka Prefecture Matsushita Electric Industrial Co., Ltd. (56) Reference JP 57-169088 (JP, A) JP 60- 116769 (JP, A) JP 64-21072 (JP, A) JP 2-23525 (JP, A)

Claims (9)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】蒸着材料を収容する坩堝と、坩堝内の蒸着
材料を溶融し蒸発させる電子銃と、前記溶融した蒸着材
料の溶液の液面に補給用蒸着材料を供給する手段と、前
記電子銃によって電子ビームが照射される前記坩堝の蒸
発領域と、補給用蒸着材料が供給される供給領域との間
の液面に挿脱自在に支持部材により支持された仕切り部
材と、前記支持部材を介して前記仕切り部材を前記液面
に挿脱駆動する駆動手段とから成り、前記液面に挿入さ
れた仕切り部材の上面は少なくとも前記液面より突出
し、下面は坩堝底面との間に前記蒸発領域と供給領域の
溶解が流通するすき間を設けて成る真空蒸着源。
1. A crucible for containing a vapor deposition material, an electron gun for melting and vaporizing the vapor deposition material in the crucible, a means for supplying a replenishment vapor deposition material to a liquid surface of a solution of the melted vapor deposition material, and the electron. A partition member supported by a support member so that it can be inserted into and removed from a liquid surface between an evaporation region of the crucible irradiated with an electron beam by a gun and a supply region to which a replenishment vapor deposition material is supplied, and the support member. Drive means for inserting / removing the partition member to / from the liquid surface via the upper surface of the partition member inserted in the liquid surface at least protruding from the liquid surface, and the lower surface between the bottom surface of the crucible and the evaporation area. And a vacuum evaporation source provided with a gap through which the melt of the supply region flows.
【請求項2】供給領域を、仕切り部材と坩堝内面で囲ま
れた領域として成る請求項1記載の真空蒸着源。
2. The vacuum vapor deposition source according to claim 1, wherein the supply region is a region surrounded by the partition member and the inner surface of the crucible.
【請求項3】供給領域を、環状の仕切り部材内面で囲ま
れた領域として成る請求項1記載の真空蒸着源。
3. The vacuum vapor deposition source according to claim 1, wherein the supply region is a region surrounded by the inner surface of the annular partition member.
【請求項4】仕切り部材の液面からの突出高さを、坩堝
内面近傍部分を除いて液面から坩堝の上端面までの高さ
と略同一として成る請求項1、2または3記載の真空蒸
着源。
4. The vacuum vapor deposition according to claim 1, 2 or 3, wherein the height of protrusion of the partition member from the liquid surface is substantially the same as the height from the liquid surface to the upper end surface of the crucible except for the vicinity of the inner surface of the crucible. source.
【請求項5】仕切り部材を坩堝内の溶液面上方から液面
に向かって降下させる間に、前記溶液中に前記仕切り部
材を浸しても前記仕切り部材が熱的に破損されない温度
にまで前記仕切り部材が前記溶液の熱により予熱される
様な降下速度で、仕切り部材が駆動手段によって駆動さ
れる請求項1、2または3記載の真空蒸着源。
5. The partition member is brought to a temperature at which the partition member is not thermally damaged even when the partition member is immersed in the solution while the partition member is lowered from above the solution surface in the crucible toward the liquid surface. The vacuum deposition source according to claim 1, 2 or 3, wherein the partition member is driven by the driving means at a descending speed such that the member is preheated by the heat of the solution.
【請求項6】補給用蒸着材料を液面に供給する速度と、
前記補給用蒸着材料が液面に接して溶融する速度が略等
しくなるよるように、液面に挿入された仕切り部材の下
面と坩堝底面との間のすきまを設定して成る請求項1、
2または3記載の真空蒸着源。
6. A speed for supplying a replenishment vapor deposition material to a liquid surface,
The clearance between the lower surface of the partition member inserted in the liquid surface and the bottom of the crucible is set so that the speed at which the replenishment vapor deposition material comes into contact with the liquid surface and melts is substantially equal.
The vacuum vapor deposition source according to 2 or 3.
【請求項7】駆動手段を、蒸着後、仕切り部材に上方へ
の駆動力を与える手段を有する駆動手段とし、電子銃
を、仕切り部材の前記坩堝内面と遊嵌する嵌合面の近傍
の液面に電子ビームを照射する偏向手段を有する電子銃
とし、その電子銃からの電子ビームの照射により、前記
遊嵌部近傍にて前記仕切り部材と坩堝内面とを固着する
前記蒸着材料の個化物を溶融し、前記駆動手段による上
方への駆動力により仕切り部材を駆動し、前記液面から
離脱する位置まで引き上げて成る請求項1あるいは2記
載の真空蒸着源。
7. The driving means is a driving means having a means for applying an upward driving force to the partition member after vapor deposition, and the liquid near the fitting surface of the partition member loosely fitted to the inner surface of the crucible. An electron gun having a deflecting means for irradiating the surface with an electron beam, and by irradiating the electron beam from the electron gun, an individualized product of the vapor deposition material for fixing the partition member and the inner surface of the crucible in the vicinity of the loose fitting portion. The vacuum vapor deposition source according to claim 1 or 2, which is formed by melting and driving the partition member by the upward driving force of the driving means and pulling it up to a position where it is separated from the liquid surface.
【請求項8】供給領域近傍の坩堝外面が、蒸発領域近傍
のそれよりも断熱された坩堝として成る請求項2記載の
真空蒸着源。
8. The vacuum vapor deposition source according to claim 2, wherein an outer surface of the crucible near the supply region is a crucible that is more thermally insulated than that near the evaporation region.
【請求項9】請求項1〜8のいずれかに記載の真空蒸着
源により、Co,Crを主成分とする磁性膜を基板に蒸着し
て成る磁気記録媒体。
9. A magnetic recording medium obtained by vapor-depositing a magnetic film containing Co and Cr as main components on a substrate by the vacuum vapor deposition source according to claim 1.
JP18080690A 1989-11-29 1990-07-09 Vacuum deposition source and magnetic recording medium deposited using the vacuum deposition source Expired - Fee Related JP2502792B2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP18080690A JP2502792B2 (en) 1990-07-09 1990-07-09 Vacuum deposition source and magnetic recording medium deposited using the vacuum deposition source
DE69007433T DE69007433T2 (en) 1989-11-29 1990-11-28 Vacuum evaporation device and method for producing film by means of vacuum evaporation.
EP90122752A EP0430210B1 (en) 1989-11-29 1990-11-28 Vacuum evaporation apparatus and method for making vacuum evaporated sheet

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18080690A JP2502792B2 (en) 1990-07-09 1990-07-09 Vacuum deposition source and magnetic recording medium deposited using the vacuum deposition source

Publications (2)

Publication Number Publication Date
JPH0472058A JPH0472058A (en) 1992-03-06
JP2502792B2 true JP2502792B2 (en) 1996-05-29

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Country Link
JP (1) JP2502792B2 (en)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2025177638A1 (en) * 2024-02-22 2025-08-28 株式会社アルバック Vacuum deposition device and vacuum deposition method

Also Published As

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JPH0472058A (en) 1992-03-06

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