JP2504849B2 - Semiconductor quantum box structure and manufacturing method thereof - Google Patents
Semiconductor quantum box structure and manufacturing method thereofInfo
- Publication number
- JP2504849B2 JP2504849B2 JP1297634A JP29763489A JP2504849B2 JP 2504849 B2 JP2504849 B2 JP 2504849B2 JP 1297634 A JP1297634 A JP 1297634A JP 29763489 A JP29763489 A JP 29763489A JP 2504849 B2 JP2504849 B2 JP 2504849B2
- Authority
- JP
- Japan
- Prior art keywords
- quantum box
- box structure
- semiconductor
- crystal
- gaas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Bipolar Transistors (AREA)
- Semiconductor Lasers (AREA)
Description
【発明の詳細な説明】 ［産業上の利用分野］ 本発明は、超高速の０次元電子トランジスタ、あるい
は低発振しきい値を持つ量子箱構造レーザ等に利用され
る半導体量子箱に関するものである。TECHNICAL FIELD The present invention relates to a semiconductor quantum box used for an ultrafast zero-dimensional electron transistor, a quantum box structure laser having a low oscillation threshold, and the like. .
［従来の技術］ 半導体量子箱構造の作製の試みは、GaAs/AlGaAs量子
井戸構造ウェハに、電子ビーム露光法により作製した金
属マスクパターン上からGaをイオン注入することによ
り、既になされている（アプライド フィジックス レ
ターズ 49巻,19号,1275〜1277頁（1986年）J.Cibert
等）。この方法では金属マスクの開口部で注入されたGa
イオンにより結晶が変質するため、イオン注入されない
部分で電子閉じ込めが生じる。2800オングストロームに
閉じ込められたGaAs量子箱からのサブバンドに対応した
カソードルミネッセンスが観測されている。[Prior Art] An attempt to fabricate a semiconductor quantum box structure has already been made by implanting Ga into a GaAs / AlGaAs quantum well structure wafer from above a metal mask pattern fabricated by an electron beam exposure method (Applied). Physics Letters, Vol. 49, No. 19, 1275-1277 (1986) J. Cibert
etc). In this method, Ga injected at the opening of the metal mask
Since the crystal is altered by the ions, electron confinement occurs in the portion where the ions are not implanted. Cathodoluminescence corresponding to subbands from a GaAs quantum box confined to 2800 Å has been observed.
［発明が解決しようとする課題］ しかし、この方法で作製できる量子箱では、面内の素
子寸法を500オングストローム以下にすることは加工精
度の面で難しい。しかし、量子箱レーザを作る場合、活
性層の幅は100オングストローム以下にする必要があ
る。また、加工にともなうダメージが入るために、発光
効率が低下するという問題があった。[Problems to be Solved by the Invention] However, in the quantum box that can be manufactured by this method, it is difficult to reduce the in-plane element size to 500 angstroms or less in terms of processing accuracy. However, when making a quantum box laser, the width of the active layer must be 100 angstroms or less. In addition, there is a problem that the luminous efficiency is lowered because of damage caused by processing.
本発明は上記問題点に鑑みてなされたものであり、ご
く微細な量子箱を有する半導体量子箱構造およびかかる
構造を製造する方法を提供することを目的とする。The present invention has been made in view of the above problems, and an object of the present invention is to provide a semiconductor quantum box structure having an extremely fine quantum box and a method of manufacturing such a structure.
［課題を解決するための手段］ 本発明による半導体量子箱構造は、基板結晶と、該基
板結晶上に形成された第１の種類の半導体層と、該第１
の種類の半導体層中に分散し、四面体構造を有する第２
の種類の半導体とを有することを特徴とする。[Means for Solving the Problems] A semiconductor quantum box structure according to the present invention comprises a substrate crystal, a first type semiconductor layer formed on the substrate crystal, and the first crystal layer.
Second type having a tetrahedral structure dispersed in a semiconductor layer of
And a semiconductor of the above type.
本発明製造方法は、所定の指数面をもつ基板結晶表面
上に複数の原料原子または原料化合物を導き、前記原料
に応じた半導体を前記基板結晶上に四面体構造に形成す
ることを特徴とする。The manufacturing method of the present invention is characterized in that a plurality of source atoms or source compounds are introduced onto the surface of a substrate crystal having a predetermined index plane, and a semiconductor corresponding to the source is formed into a tetrahedral structure on the substrate crystal. .
［作 用］ 本発明においては、所定の基板結晶表面上に例えば有
機金属化合物原料ガスを導き、有機金属化合物ガスに応
じた半導体を基板結晶表面上に析出する有機金属気相成
長法（MOCVD法）を用い、有機金属化合物ガスに応じて
形成される半導体を基板上に正四面体形状に付着させる
ことにより、量子箱を形成するものである。この方法を
用いれば、量子箱の寸法が50から２ナノメータの構造が
加工ダメージ無しに得られる。[Operation] In the present invention, for example, an organometallic compound source gas is introduced onto a predetermined substrate crystal surface, and a semiconductor corresponding to the organometallic compound gas is deposited on the substrate crystal surface by a metal organic chemical vapor deposition method (MOCVD method). ) Is used to form a quantum box by depositing a semiconductor formed according to the organometallic compound gas on a substrate in a regular tetrahedral shape. Using this method, structures with quantum box dimensions of 50 to 2 nanometers can be obtained without processing damage.
［実施例］ 以下、実施例によって本発明を詳細に説明する。[Examples] Hereinafter, the present invention will be described in detail with reference to Examples.
第１図は、本発明の一実施例を示す模式図である。Ga
As（111）Ａを基板結晶１として用い、その上に有機金
属気相成長法によりAlGaAs2に囲まれたGaAsの量子箱３
を作製する手順を順を追って説明する。（111）Ａ面上
にできる正四面体ファセット面の面方位を第２図に示
す。FIG. 1 is a schematic view showing an embodiment of the present invention. Ga
As (111) A is used as the substrate crystal 1 and a GaAs quantum box 3 surrounded by AlGaAs 2 by metalorganic vapor phase epitaxy 3
The procedure for manufacturing the will be described step by step. FIG. 2 shows the plane orientation of the regular tetrahedral facets formed on the (111) A plane.
次に結晶成長条件の詳細を示す。高周波加熱の横型炉
を用い、0.1気圧の減圧下で成長を行った。原料として
トリメチルアルミニウム，トリメチルガリウム，アルシ
ンを用いた。反応管内の分圧は、それぞれ9.4×10-6at
m,2.6×10-5atm,4.7×10-4atmであり、水素キャリアガ
スも含め、全ガス流量は４リッター／分である。始めに
AlGaAs層を厚さ１ミクロンGaAs（111）Ａ面上に成長さ
せる。成長温度は650℃である。（111）Ａ面上ではAlGa
Asは750℃以下で鏡面の層状成長が得られる。次に成長
温度を800℃に上げ、供給原料ガスをトリメチルガリウ
ムおよびアルシンとしてGaAsの正四面体構造を高さ10ナ
ノメータ成長させる。700℃以上の高温では（111）Ａ面
上のGaAsは第２図に示すピラミッド状（正四面体）に成
長する。ピラミッドの密度はほぼ均一に分布し、高さは
成長時間に比例する。次に成長温度を再び650℃に下げ
て、供給原料ガスにトリメチルアルミニウムを加え、Al
GaAs層を厚さ１ミクロン成長させる。このような成長過
程を経て10ナノメータサイズのGaAs正四面体構造がAlGa
As層の中に埋め込まれ、３次元量子井戸構造ができる。Next, the details of the crystal growth conditions will be shown. The growth was performed under a reduced pressure of 0.1 atm using a horizontal furnace of high frequency heating. Trimethylaluminum, trimethylgallium, and arsine were used as raw materials. The partial pressure in the reaction tube is 9.4 × 10 -6 at
m, 2.6 × 10 −5 atm, 4.7 × 10 −4 atm, and the total gas flow rate including the hydrogen carrier gas is 4 liters / minute. At the beginning
An AlGaAs layer is grown on a 1 micron thick GaAs (111) A plane. The growth temperature is 650 ° C. AlGa on (111) A surface
At As below 750 ℃, layered growth of mirror surface can be obtained. Next, the growth temperature is raised to 800 ° C., and a tetrahedral structure of GaAs is grown to a height of 10 nanometers by using trimethylgallium and arsine as a feed material gas. At a high temperature of 700 ° C. or higher, GaAs on the (111) A plane grows into a pyramid (regular tetrahedron) shown in FIG. Pyramid density is almost evenly distributed and height is proportional to growth time. Next, the growth temperature was lowered again to 650 ° C, trimethylaluminum was added to the feed gas, and Al
The GaAs layer is grown to a thickness of 1 micron. After such a growth process, a 10-nanometer-sized GaAs tetrahedral structure becomes AlGa
It is embedded in the As layer to form a three-dimensional quantum well structure.
基板としてGaAs（111）Ｂ面を用いる場合は、AlGaAs
層の成長温度を800℃,GaAsの成長温度を650℃とする。
（111）Ｂ面上ではAlGaAsは750℃以上で鏡面の層状成長
が得られ、700℃以下の低温では（111）Ｂ面上のGaAsは
ピラミッド状（正四面体）に成長する。When using GaAs (111) B surface as the substrate, AlGaAs
The layer growth temperature is 800 ° C and the GaAs growth temperature is 650 ° C.
On the (111) B plane, AlGaAs can be obtained as a mirror-like layered growth at 750 ° C. or higher, and at a low temperature of 700 ° C. or lower, GaAs on the (111) B plane grows in a pyramidal shape (regular tetrahedron).
上述の例と反対にAlGaAs正四面体構造をGaAs層で閉じ
込めることができる。AlGaAs中に数個のドナー（または
アクセプター）不純物を添加すると変調ドープ効果によ
り電子（または正孔）が周囲のGaAs層にしみだしAlGaAs
のまわりに電子（正孔）の準位を作る、超原子（スーパ
ーアトム）と呼ばれる新しい材料ができる。超原子の性
質に関しては日本物理学会誌第42巻第７号（1987年）65
3−656ページ：井下等に述べられている。Contrary to the above example, the AlGaAs tetrahedral structure can be confined with a GaAs layer. When several donor (or acceptor) impurities are added to AlGaAs, electrons (or holes) seep into the surrounding GaAs layer due to the modulation doping effect.
There is a new material called a super atom that creates electron (hole) levels around. Regarding the properties of superatoms, Journal of the Physical Society of Japan Vol. 42, No. 7 (1987) 65
Page 3-656: Described in Inoshita et al.
第３図に、光素子への応用として量子箱構造レーザの
例を示す。このレーザは、nGaAs基板４上に、nAlGaAs層
5,活性層6,pAlGaAs層７およびpGaAs層８が順次積層さ
れ、さらにｎ側電極９とｐ側電極10を設けた構造を有す
る。活性層６はAlGaAsからなり、層内に正四面体のGaAs
が埋め込まれている。電子および正孔はGaAs内に閉じ込
められる。Y.Arakawaらは、電子および正孔に対する状
態密度がゼロ次元化すれば不連続となり、発振しきい値
が温度に対して安定化すると共に、スペクトルがシャー
プになることを理論的に示している（アプライドフィジ
ックスレターズ;40巻,11号,939−941ページ;1982年）
が、本発明による半導体量子箱構造によって、このよう
なレーザが初めて実現される。FIG. 3 shows an example of a quantum box structure laser as an application to an optical device. This laser consists of an nAlGaAs layer on an nGaAs substrate 4.
5, an active layer 6, a pAlGaAs layer 7 and a pGaAs layer 8 are sequentially laminated, and an n-side electrode 9 and a p-side electrode 10 are further provided. The active layer 6 is made of AlGaAs, and tetrahedral GaAs is formed in the layer.
Is embedded. Electrons and holes are confined in GaAs. Y. Arakawa and colleagues theoretically show that if the density of states for electrons and holes becomes zero-dimensional, they become discontinuous, the oscillation threshold stabilizes with temperature, and the spectrum becomes sharp. (Applied Physics Letters; 40, No. 11, 939-941; 1982)
However, such a laser is realized for the first time by the semiconductor quantum box structure according to the present invention.
以上の原理に基く量子箱構造の作製法は、分子線エピ
タキシャル成長法およびハライド系原料を用いた気相成
長法を用いても可能である。また、上述した実施例以外
に、ダイアモンド構造のSi（111）面を基板として用
い、Si中にGeの量子箱を作製すること、閃亜鉛鉱型結晶
基板を用い、他の複数のIII−Ｖ族あるいはZnSeその他I
I−VI族の量子箱を作製することも可能である。The quantum box structure manufacturing method based on the above principle can also be used by a molecular beam epitaxial growth method and a vapor phase growth method using a halide-based material. In addition to the above-described examples, a diamond (Si) (111) plane is used as a substrate to form a Ge quantum box in Si, a zinc blende type crystal substrate is used, and a plurality of other III-V Zoku or ZnSe other I
It is also possible to fabricate I-VI group quantum boxes.
［発明の効果］ 以上説明したように、本発明によれば、50から２ナノ
メータの寸法の量子箱構造を実現することができ、超高
速の０次元電子トランジスタ、あるいは低発振しきい値
を持つ量子箱構造レーザ等に利用することができる。[Effects of the Invention] As described above, according to the present invention, a quantum box structure having a size of 50 to 2 nanometers can be realized, and an ultrafast zero-dimensional electron transistor or a low oscillation threshold value is provided. It can be used for a quantum box structure laser and the like.
第１図は本発明の一実施例を示す模式図、 第２図は正四面体構造の模型図、 第３図は量子箱構造レーザの構造を示す斜視図である。 １……GaAs基板、 ２……AlGaAs層、 ３……GaAs正四面体量子箱、 ４……nGaAs基板、 ５……nAlGaAs層、 ６……活性層、 ７……pAlGaAs層、 ８……pGaAs層、 ９……ｎ側電極、 10……ｐ側電極。 FIG. 1 is a schematic view showing an embodiment of the present invention, FIG. 2 is a model view of a regular tetrahedron structure, and FIG. 3 is a perspective view showing the structure of a quantum box structure laser. 1 ... GaAs substrate, 2 ... AlGaAs layer, 3 ... GaAs regular tetrahedron quantum box, 4 ... nGaAs substrate, 5 ... nAlGaAs layer, 6 ... Active layer, 7 ... pAlGaAs layer, 8 ... pGaAs Layer, 9 ... n side electrode, 10 ... p side electrode.
Claims (3)
る第２の種類の半導体とを 有することを特徴とする半導体量子箱構造。1. A substrate crystal, a first type semiconductor layer formed on the substrate crystal, and a second type semiconductor having a tetrahedral structure dispersed in the first type semiconductor layer. A semiconductor quantum box structure having:
であるダイアモンド結晶あるいは表面の面指数が（11
1）Ａまたは（111）Ｂの閃亜鉛鉱型結晶であることを特
徴とする請求項１に記載の半導体量子箱構造。2. The surface index of the substrate crystal is (111)
The surface index of the diamond crystal or surface is (11
1. The semiconductor quantum box structure according to claim 1, which is a zinc blende type crystal of 1) A or (111) B.
の原料原子または原料化合物を導き、前記原料に応じた
半導体を前記基板結晶上に四面体構造に形成することを
特徴とする半導体量子箱構造の製造方法。3. A semiconductor characterized in that a plurality of source atoms or source compounds are introduced onto the surface of a substrate crystal having a predetermined index plane, and a semiconductor corresponding to the source is formed into a tetrahedral structure on the substrate crystal. Quantum box structure manufacturing method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1297634A JP2504849B2 (en) | 1989-11-17 | 1989-11-17 | Semiconductor quantum box structure and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1297634A JP2504849B2 (en) | 1989-11-17 | 1989-11-17 | Semiconductor quantum box structure and manufacturing method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03159287A JPH03159287A (en) | 1991-07-09 |
| JP2504849B2 true JP2504849B2 (en) | 1996-06-05 |
Family
ID=17849116
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1297634A Expired - Fee Related JP2504849B2 (en) | 1989-11-17 | 1989-11-17 | Semiconductor quantum box structure and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2504849B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6011271A (en) | 1994-04-28 | 2000-01-04 | Fujitsu Limited | Semiconductor device and method of fabricating the same |
-
1989
- 1989-11-17 JP JP1297634A patent/JP2504849B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH03159287A (en) | 1991-07-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2004536450A (en) | Semiconductor device and method for producing the same | |
| JP2555881B2 (en) | A (1) Crystal growth method of GaInP type crystal and semiconductor laser | |
| JP2854607B2 (en) | Semiconductor device and semiconductor laser device | |
| JP3987898B2 (en) | Quantum dot forming method and quantum dot structure | |
| US5922621A (en) | Quantum semiconductor device and a fabrication process thereof | |
| JP4651759B2 (en) | Device with quantum dots | |
| JP4066002B2 (en) | Manufacturing method of semiconductor quantum dots | |
| JPH0794494A (en) | Method for manufacturing compound semiconductor device | |
| JP2504849B2 (en) | Semiconductor quantum box structure and manufacturing method thereof | |
| EP0567256A2 (en) | Method of making a periodic heteroepitaxial semiconductor structure | |
| JP2001024221A (en) | Gallium nitride based compound semiconductor and method of manufacturing the same | |
| JPH0752719B2 (en) | Method for manufacturing vertical semiconductor superlattice | |
| KR100540874B1 (en) | Spontaneous Quantum Dot Structure Formation Method Using Thin Heterogeneous Cover Layer | |
| JP3155007B2 (en) | Compound semiconductor and manufacturing method thereof | |
| JPH01128423A (en) | Semiconductor device | |
| JPH05175118A (en) | Method for creating compound semiconductor having quantum fine line or quantum box structure | |
| JP3042645B2 (en) | Manufacturing method of semiconductor quantum box structure | |
| JPS61287288A (en) | Semiconductor laser device | |
| JPH05347251A (en) | Iii-v compound semiconductor vapor growth and semiconductor device | |
| JP2643771B2 (en) | Semiconductor embedded structure and manufacturing method thereof | |
| JPH02188912A (en) | Selective growth method of iii-v compound semiconductor | |
| JPH0430578A (en) | Manufacture of semiconductor quantum box structure | |
| JP2794506B2 (en) | Compound semiconductor heteroepitaxial growth method | |
| JPH0423471A (en) | Manufacture of vertical superplattice element | |
| JPH10261785A (en) | Quantum box semiconductor device and method of manufacturing the same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |