JP2779040B2 - Method and apparatus for supplying vapor deposition material - Google Patents

Description

Description: BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method and apparatus for supplying a vapor deposition material to a heated position when a thin film is formed on a substrate.

2. Description of the Related Art For example, in order to form a thin film on a long film and to produce a functional film or the like to be a material of a capacitor or a magnetic tape by vacuum deposition or the like, a large amount of steam is generated for a long time. There is a need. For that purpose, it is necessary to continuously supply the deposition material at a heated position such as an evaporation crucible. As one of the methods, there is a method in which a vapor-deposited material is supplied as a wire into a crucible as shown in, for example, “The Thin Film Handbook” edited by the Japan Society for the Promotion of Science (published in 1983, Ohmsha, p. 105). .

This method can be easily applied to a wire if the deposition material is a ductile material such as Al, Ni, or Cu, but it is extremely difficult to apply a wire to a brittle material such as Cr.

Further, even if it is not a brittle material, for example, Co-
Hard materials such as Cr alloy or Co-Cr-Ni alloy,
It is not impossible to make a wire rod, but the workability is not good, so the processing cost is high and it is not practical. Therefore, such a material is supplied in the form of a bar.

The problem in the case where the material is supplied by a bar will be described with reference to FIGS. In FIG. 4, reference numeral 1 denotes a vapor deposition material contained in the crucible 2, which is heated and melted by, for example, a known electron beam heating means (not shown). Reference numeral 3 denotes a bar-shaped supply vapor deposition material (hereinafter abbreviated as a bar). Reference numerals 11, 12, and 13 denote rotating rollers for guiding the bar 3, respectively, and 14 denotes a driving roller.
The drive roller 14 is driven by, for example, a known motor (not shown) or the like, and sandwiches the bar 3 with the rotary roller 11 to melt the bar 3 at a constant speed in the direction of arrow A. To the liquid level 4. 15, 16
Is a cover for preventing the vapor of the vapor deposition material 1 from adhering to the rollers 11, 12, 13, and 14.

With the above configuration, in order to form a thin film over a long period of time, the rod material 3 is supplied so that the evaporation material 1 in the crucible 2 does not decrease due to evaporation.

The behavior of the tip 5 after the tip 5 of the bar 3 contacts the liquid level 4 will be described with reference to FIGS.

FIG. 5 is a view at the moment when the tip 5 of the bar 3 comes into contact with the liquid surface 4, and this moment is referred to as a state a. In this state a, the tip 5 absorbs heat from the liquid level 4 and starts to melt, becoming a solution 6 and dissolving in the solution of the vapor deposition material 1 as indicated by the arrow R in the state b shown in FIG. At this time, heat is transmitted to the tip 5 in a direction opposite to the arrow R, and the melting of the tip 5 proceeds. As the melting progresses, the distance g between the liquid surface 4 and the tip 5 of the rod 3 increases, so that heat from the liquid surface 4 is less likely to be transmitted to the tip 5, and the amount of melting at the tip 5 as shown in state c in FIG. The amount of the melt 6 decreases and decreases.
Then, the tip 5 becomes more difficult to melt, and finally the melting stops as shown in the state d in FIG.

During this time, the rod material 3 is continuously fed in the direction of the arrow A. However, since the melting speed of the tip 5 from the state a to the state d is faster than the speed, the gap D occurs as in the state d. Become. Since the bars 3 are continuously fed, the gap D becomes smaller as time elapses, and finally reaches the state a, and the above cycle is repeated sequentially. That is, even though the feed of the bar 3 is continuous, the supply of the bar 3 to the liquid surface 4 is intermittent.

While the tip 5 is melting into the liquid surface, heat is taken from the liquid surface 4, so that the temperature of the liquid surface 4 decreases. Then, the evaporation rate decreases, and the evaporation rate periodically fluctuates with time as shown in FIG. The distance D in the state d increases as the diameter of the bar 3 increases. The reason is that, when the solution 6 is substantially cylindrical, the larger the diameter is, the smaller (cylindrical surface area / cylindrical volume) is, so the amount of heat transmitted from the liquid surface 4 to the tip 5 through the solution 6 is radiated from the cylindrical surface. This is because the ratio of the amount of heat that escapes is reduced and the material is melted for a longer time. Thus the diameter of the bar is the both larger Figure 9 period T _L and fluctuations in evaporation rate width H _L thick.

If the evaporation rate fluctuates, there is a serious problem that the thickness of the film in the passing direction fluctuates when performing vapor deposition while moving a substrate or a film (not shown) above the crucible 2 while moving the substrate or film.

To cope with this problem, a method shown in FIG. 10 in which a bar is melted and then supplied to a crucible is conventionally used in some cases. This method will be described with the same reference numerals as those of FIG. In FIG. 10, when the tip 5 of the bar 3 is irradiated with a known electron beam 7 and melted, and the solution 6 is supplied to the liquid surface, the evaporation rate fluctuates because the temperature of the liquid surface 4 does not decrease as in the previous example. Never. Therefore, the substrate 8 is placed above the crucible 2.
The thickness of the thin film 9 does not fluctuate even when the film is formed in the direction perpendicular to the paper surface.

However, when the vapor deposition material 1 is, for example, a Co—Cr alloy that is a magnetic film material composed of components having different evaporation rates,
Since the evaporation rate is higher than that of Co, M> Y where Cr is the content of the target thin film and Y is the Cr content of the thin film material 1 when a thin film having the content M is obtained. The Cr content of the vapor generated from the liquid level 4 is equal to M. Therefore, if a material having a Cr content of M is supplied by the amount evaporated, a thin film having a Cr content of M can be continuously deposited while the amount of the thin film material 1 in the crucible 2 is kept constant.

However, in the structure of FIG. 10, the Cr content of the solution 6 melted by the electron beam 7 is M, so that the Cr content of the vapor generated from the solution 6 is larger than M.

Then, the thin film formed on the right side of the substrate 8
Since the Cr content is high because it is close to the solution 6, the Cr content of the thin film formed on the left is conversely small, and there is a major problem that the thin film 9 having a constant composition cannot be formed over the entire width of the substrate 8. there were.

Therefore, the present inventor has found that, when forming a thin film composed of a plurality of components having different evaporation rates during vacuum evaporation, the difference in the content of components in the plane direction is small even when a thin film composed of a plurality of components having different evaporation rates is formed. The inventors of the present invention have invented a method and apparatus for supplying a deposition material capable of forming a thin film, and have filed an application (Japanese Patent Application No. 1-156520). The gist of the invention is as follows. The transfer speed of the supply long vapor deposition material transferred toward the vapor deposition material melted in the crucible is defined as + in the direction toward the vapor deposition material and − in the direction away from the vapor deposition material. At that time, it alternately switches between + direction and-direction,
That is, the reciprocating operation is performed, and the average is set to the + direction.

One example of the contents will be described with reference to FIG. The same components as those of the conventional example are indicated by the same numbers as those of the conventional example. No.
FIG. 11 shows an embodiment of the present invention. In FIG. 11, reference numeral 20 denotes a motor, which is driven by a drive circuit 21 to rotate the drive roller 14. The motor 20 may be installed in a vacuum chamber (not shown) or may be installed outside, and the driving roller 14 may be rotated via a known rotation introducing device. Numeral 22 denotes an arithmetic circuit which controls the motor 20 based on an average transfer speed command (V _AV ) 24 of the bar 3 and data in the memory 23.
And sends it to the drive circuit 21 as a speed command 25.

Next, an example of the speed pattern calculation is shown in FIG. In FIG. 12, the transfer speed v indicates the transfer speed of the bar 3 in FIG. 11, and + indicates the speed in the direction of arrow A, and-indicates the speed in the direction opposite to arrow A. The speed pattern has a trapezoidal wave shape in both the + and-directions. In order to simplify the calculation, the maximum speed (V _MAX ) is the same in both the + direction and the-direction.
Acceleration / deceleration to V _MAX , that is, angles α ₁ , α ₂ , α ₃ , α
₄ are the same. Also, when the transfer speed changes from the + direction to the-direction and vice versa, the bar supply mechanism including the rollers and motors shown in FIG. Pause time T as
_FS, but are provided respectively T _BS is not always necessary.

The area of the trapezoidal wave whose velocity is in the positive direction indicates the amount of transfer F in the direction of arrow A, and the area of the trapezoidal wave in one direction indicates the amount of transfer B in the direction opposite to arrow A. T _FD and T _BD are the net time for one-way transfer and the net time for one-way transfer, respectively. In the above, the average transfer speed (V _AV ) is represented by equation (1).

V _AV = (F−B) / (T _FD + T _BD + T _FS + T _BS ) (1) Further, T _FD can be calculated from the equation (2).

T _FD = T _BD + [(F−B) / V _MAX ] (2) Note that V _AV can compensate for the evaporation amount of the evaporation material 1 in the crucible 2 as in the related art, that is, the evaporation amount. It is set as follows.

Distance the distance B of Fig. 12 _{K 1 (= D / sinθ 1} ) in advance to be larger than the same or K ₁ and, namely the tip of the bar 5
When the bar is driven in the speed pattern of FIG. 12 so that the bar 3 is moved in the negative direction until the liquid level 4 is separated from the liquid surface 4, if the bar 3 is in the state d in FIG. 8 at time 0 in FIG. ₁ in FIG. 5 state a, and the Figure 6 condition b as time elapses from T ₁ to T _2, Fig. 7 state c, the bar 3 in the order of FIG. 8 state d
Dissolves in the solution of the vapor deposition material 1. It is assumed that the speed pattern is set such that one cycle T _S of the speed pattern is, for example, 1/10 of one cycle T _L of the related art in FIG. Then, the amount of the rod 3 dissolved in the solution of the vapor deposition material 1 in one cycle can be reduced to 1/10 of the conventional amount. When the amount of the melt decreases, the amount of heat taken from the liquid surface 4 also decreases, so that the temperature decrease of the liquid surface 4 also decreases. Then reduction in evaporation rate is also reduced, the evaporation rate is the variation width H _S varies period T _S with time lapse as shown in FIG. 13 that of the prior
It can be about 1/10 of H _L. Therefore, the uniformity of the film thickness in the pass film formation can be improved.

When the tip 5 contacts the liquid surface 4 as shown in FIG. 14, the tip 5 melts and becomes a solution 6. When the rod 3 is, for example, an alloy of Co and Cr composed of components having different evaporation rates as described above, the content of Cr in the solution 6 depends on the deposition material 1 as described above.
Although the solution 6 is larger than that of the above solution, the solution 6 is diffused into the vapor deposition material 1 as shown by an arrow E and is diluted. Therefore, since the generation of the vapor having a high Cr content that evaporates directly from the solution 6 is reduced, the increase in the Cr content in the right portion of the thin film 9 formed on the substrate 8 in FIG. 11 can be suppressed. ,
This has the effect that the uniformity of the content of the component in the width direction of the thin film can be improved.

Problems to be Solved by the Invention As a result of research conducted by the present inventors, it was found that, in order to reduce the variation in deposition rate, `` a large amount of the feed material does not dissolve into the liquid surface at a time when the feed material comes into contact with the liquid surface and melts. and so, to reduce the decrease in the evaporation rate by decreasing the temperature drop of the liquid surface "or if the V _AV the same in Figure 12 1
In addition to the condition that the period T _S (= T _FD + T _BD + T _FS + T _BS ) is reduced, that is, the feed amount per reciprocation (F−B) is reduced ”, one more condition“ the feed material is the liquid level The amount of material that melts and melts on the liquid surface does not exceed the 1 + -direction operation, that is, does not exceed the advancing amount of the feed material per one reciprocating operation. To do so ".

When this condition is not satisfied, it has been found that the evaporation rate fluctuation as described below occurs. FIG. 15 (a ′) shows that the rod 3 is reciprocated and supplied to the liquid surface 4 of the vapor deposition material 1 in the crucible 2 by the above-described method and the rod 3 is melted.
As shown in (b '), (c'), and (d '), the rod 3 comes into contact with the liquid surface 4 in the order of states a', b ', c', and d 'and then recedes. At this time, in the state d ', the drop 3'
Is observed to hang. 16 (f '), (g'), (h ')... Due to the drop 3'.
(P '), (q'), (f '), (g'), (h ')
The phenomenon shown in FIG. FIG. 16 is a view showing a molten state of the bar material 3 supplied in a reciprocating motion, and states f ', g', and h '.
The operation is repeated in the order of p ', q', f ', g', h ',. State f ', h', j '... Is T ₁ in FIG. 12, that is, the state in which the bar has finished moving forward, and states g ′, i ′, k ′. ₂ , that is, a state in which the bar has finished retreating. Between states f 'and g', h '
When the drop 3 'and the liquid surface 4 between the positions i and i' come back in contact with each other, the course shown in FIG. 15 is followed. In FIG. 16, the amount of dripping of the droplet 3 'is exaggerated more than in FIG. 15 for easy understanding. Here, Me is the liquid surface 4 until the rod 3 comes into contact with the liquid surface 4 and separates from the liquid surface 4.
And Me> (F−
B), i.e., the condition that "the amount of the supplied material which is in contact with the liquid level and melts and melts at the liquid level exceeds the 1 + -direction operation, that is, exceeds the advance amount of the supplied material per one reciprocating operation". Then, since the bar 3 repeats the reciprocating operation, the operations from a 'to d' in FIG. 15 are repeated. Me> (F
-B), the contact amount between the liquid surface 4 and the rod 3 gradually decreases, and finally the contact stops as in the state p '. When the contact amount is large, the melting amount increases, the temperature drop of the liquid surface 4 increases, and the evaporation rate decreases. As the contact amount decreases, the melting amount decreases, the temperature increases, the evaporation rate increases, and the evaporation rate increases. major problem of variation as the amplitude H _a generated in the period T _a of FIG. 13. When the feed material is composed of a plurality of components having different evaporation rates, as described above, the feed material contains a material having a high evaporation rate more than the solution. Therefore, as described above, when the amount of contact between the rod and the liquid surface changes and the amount of the rod that melts into the liquid surface changes, the composition ratio of the vapor generated from the liquid surface also changes, and when passing through the film, the composition ratio in the passing direction changes. There was a big problem that the composition ratio fluctuated.

Therefore, the present invention is to solve such a problem, and the vapor deposition rate fluctuation during vacuum vapor deposition is small, and the vapor composition ratio can be reduced even when a thin film composed of a plurality of components having different vaporization rates is formed. It is an object of the present invention to provide a method and an apparatus for supplying a vapor deposition material capable of forming a thin film having a small fluctuation in the material.

Means for Solving the Problems According to the present invention, the vapor deposition material contained in a crucible is heated and melted, and vapor generated from the vapor deposition material is attached to a substrate to form a thin film. In a vapor deposition material supply method for supplying a material toward a liquid surface of a vapor deposition material, a transfer speed of a long evaporating material for supply transferred toward a liquid surface of the vaporized material melted in the crucible is increased toward the liquid surface. When the direction is + and the direction away from the liquid surface is-, the direction is alternately switched to the + and-directions, and the average is +
The moving amount is set so that the amount of the vapor deposition material in contact with the liquid surface and melting and melting into the liquid surface does not exceed the advance amount of the vapor deposition material per 1 + -direction operation. This is a characteristic method of supplying a deposition material.

The present invention according to claim 2 is that, when the vapor deposition material stored in the crucible is heated and melted, and the vapor generated from the vapor deposition material is attached to the substrate to form a thin film, the vapor deposition material melted in the crucible When the transfer speed of the supply long deposition material transferred toward the deposition material is + in the direction toward the deposition material and-in the direction away from the deposition material, the deposition material is alternately switched to the + and-directions. the a deposition material supplying device for supplying to the crucible, the average transfer rate of supply long deposition material (V _AV) V on the basis of a command _{AV = (F-B) /} (T FD + T BD + T FS + T BS ) ... (1) F: + direction transfer amount B:-direction transfer amount (constant) T _FD : + direction transfer net time T _FS : + direction transfer pause time (constant) T _FS ≥ 0 T _BD :-direction transferring the net time (constant) T _BS: - directional movement quiescent time (constant) performed T _BS> T _FS becomes operational, calculated Is an evaporation material supply apparatus characterized by comprising a control means for driving the feed long deposition material at have been F and T _FD.

According to the present invention of claim 3, the vapor deposition material contained in the crucible is heated and melted, and the vapor generated from the vapor deposition material is attached to the substrate to form a thin film. When the transfer speed of the supply long deposition material transferred toward the deposition material is +, the direction toward the deposition material is +, and the direction away from the deposition material is-, the deposition material is alternately switched to the + direction and the-direction. An apparatus for supplying a vapor deposition material to a crucible, wherein the average transport speed (V
_AV ) Based on the command, _VAV = (FB) / ( _TFD + _TBD + _TFS + _TBS ) (1) where F: positive direction transfer amount (constant) B: negative direction transfer amount (constant) T _FD : + direction net transfer time (constant) T _FS : + direction transfer pause time (constant) T _FS ≥ 0 T _BD :-direction transfer net time (constant) T _BS :-direction transfer pause time T _BS > T _FS performs the operation, a vapor deposition material supply apparatus characterized by comprising a control means for driving the feed long deposition material at the calculated T _BS.

The present invention according to claim 4 is a means for heating and melting a vapor deposition material contained in a crucible, adhering vapor generated from the vapor deposition material to a substrate to form a thin film, and a vapor deposition material melted in the crucible. When the transfer speed of the supply long vapor deposition material transferred toward the material liquid level is + in the direction toward the liquid surface and-in the direction away from the liquid surface, the transfer speed is alternately switched between the + direction and the-direction. A vapor deposition material transporting means for transporting the vapor deposition material as a + direction on average, and a means for cooling the vicinity of the tip end of the vapor deposition material toward the liquid level. .

The present invention according to claim 5 is a means for heating and melting a vapor deposition material stored in a crucible, attaching vapor generated from the vapor deposition material to a substrate to form a thin film, and forming a thin film in the crucible. When the transfer speed of the supply long vapor deposition material transferred toward the material liquid level is + in the direction toward the liquid surface and-in the direction away from the liquid surface, the transfer speed is alternately switched between the + direction and the-direction. A vapor deposition material supply device comprising: a vapor deposition material transporting means for transporting the vapor deposition material as a + direction on average; and a means for cooling the vicinity of the tip of the vapor deposition material toward the liquid level, wherein the average transfer rate of scale deposition material _{(V AV) V AV = (} F-B) based on the command _{/ (T FD + T BD +} T FS + T BS) ... (1) F: + directional movement amount B: - directional movement amount T _FD : + direction transfer net time T _FS : + direction transfer pause time T _FS ≧ 0 T _BD : − Direction transfer net time T _BS : −direction transfer pause time T _BS > T _FS calculation, and control means for driving the supply long deposition material at each calculated value is provided. It is a material supply device.

According to the present invention, the supply material can be brought into contact with the liquid surface at substantially the same amount for each reciprocating operation, so that the same amount of the supply material can be dissolved in the solution each time. Surface temperature fluctuations are reduced, and evaporation rate fluctuations are also reduced. As a result, the variation of the film thickness in the pass-through film formation is reduced, so that the uniformity of the film thickness can be improved.

In addition, even when the bar is composed of a plurality of components having different evaporation rates, the above-described variation in the composition ratio can be reduced. As a result, it is possible to improve the uniformity of the composition ratio in the passing direction when performing the passing film formation.

As described above, according to the present invention, since the contact time between the liquid surface and the bar is shortened because the T _FS is shortened, the amount of the bar material that melts into the liquid surface at the time of contact between the two is reduced. Can be. On the other hand, if V _AV is the same because T _BS is lengthened, the denominator of equation (1) becomes large and (FB) of equation (1)
That is, the supply amount per reciprocation of the bar can be increased. Therefore, due to their synergistic effect, the condition “the amount of the supplied material that comes into contact with the liquid surface and melts and melts into the liquid surface exceeds the amount of advance of the supplied material per 1 + -direction operation, that is, one reciprocating operation. No ", that is," the supply material comes into contact with the liquid surface at substantially the same amount for each reciprocating operation "can be satisfied, and material supply having the above-mentioned excellent characteristics can be realized.

According to the third aspect of the present invention, as described above, the condition can be satisfied in the same manner as in the second aspect.
Further, since (FB) is fixed, if the condition (FB) satisfies the above condition, the denominator of the equation (1) will only increase even in a region where _VAV is small. Can be easily satisfied as well.
Therefore, material supply having the above-described excellent characteristics can be realized in a region where _VAV is small.

According to the fourth aspect of the present invention, since the temperature of the vapor-deposited material is reduced by cooling the leading end of the vapor-deposited material, the temperature of the rod hardly rises at the time of contact between the liquid surface and the rod, so that the rod has a liquid surface. The amount of melting can be reduced. Accordingly, material supply having the above-mentioned excellent characteristics can be realized.

In order that the invention described in claim 5 above, the time T _BS which bar is stopped away from the liquid surface is long been the bar tip is sufficiently cooled by the cooling means, the bar has a liquid surface The amount of melting can be reduced more effectively. Accordingly, material supply having the above-mentioned excellent characteristics can be realized.

Embodiments Embodiments of the present invention will be described below with reference to the drawings.
The same components as those of the conventional example are denoted by the same reference numerals as those of the conventional example. FIG. 1 is a pattern diagram of the transfer speed of a bar showing one embodiment of the present invention. In order to transfer the bar, for example, the configuration shown in FIG. 4 filed by the present inventors can be applied. The configuration and operation of FIG. 4 have already been described, and a description thereof will not be repeated.

In the first embodiment of the present invention, in the transfer speed pattern diagram shown in FIG. 1, the amount by which the rod 3 contacts and melts into the liquid surface 4 and melts into the liquid surface 4 is 1 + -direction operation, that is, 1
The transfer speed pattern is set so as not to exceed the advance amount (FB) of the supply material 3 per reciprocating operation.

Accordingly, the supply material 3 can be brought into contact with the liquid surface 4 of substantially the same amount each time the reciprocating operation is performed, and the liquid material 4 can be dissolved in the solution of the same amount of the supply material 3 each time, so that the temperature fluctuation of the liquid surface 4 is reduced. Evaporation rate fluctuations are also reduced. As a result, the variation of the film thickness in the pass-through film formation is reduced, so that the uniformity of the film thickness can be improved.

Further, even when the bar 3 is composed of a plurality of components having different evaporation rates, the above-described variation in the composition ratio can be reduced. As a result, it is possible to improve the uniformity of the composition ratio in the passing direction when performing the passing film formation.

In the second embodiment of the present invention, in the moving speed pattern diagram in FIG. 1, V _AV = (FB) / (T _FD ) based on the average moving speed (V _AV ) command of the supply long vapor deposition material 3. + T _BD + T _FS + T _BS )… (1) F: + direction transfer amount B: − direction transfer amount (constant) T _FD : + direction transfer net time T _FS : + direction transfer pause time (constant) T _FS ≧ 0 T _BD :-direction transfer net time (constant) T _BS :-direction transfer pause time (constant) _TBS > T _{FS is} calculated, and the calculated F and T _FD are used to drive the long deposition material 3 for supply. It is provided with control means 100 (see FIG. 2).

Therefore, the contact time between the liquid surface 4 and the rod 3 is shortened because the T _FS is shortened.
It is possible to reduce the amount of melting. On the other hand, since the longer T _BS denominator becomes large and expression of the formula (1) (1)
(FB), that is, the supply amount per reciprocation of the bar can be increased. Therefore, due to their synergistic effect, the condition “the amount of the material that comes into contact with the liquid surface and melts and melts into the liquid surface exceeds the amount of advance of the supply material per 1 + -direction operation, that is, one reciprocating operation. No ", that is," the feed material comes into contact with the liquid surface at substantially the same amount for each reciprocating operation ".

Third embodiment of the present _{invention, V AV = (F-B} ) based on the average transfer rate of supply long deposition material 3 (V _AV) Directive _{/ (T FD + T BD +} T FS + T BS) ... (1 ) F: + direction transfer amount (constant) B:-direction transfer amount (constant) T _FD : + direction transfer net time (constant) T _FS : + direction transfer pause time (constant) T _FS ≥ 0 T _BD :-direction Net transfer time (constant) T _BS : − direction transfer pause time An arithmetic operation of T _BS > T _FS is performed, and the control means 100 is provided to drive the supply long evaporation material at the calculated T _BS .

Therefore, the above condition can be satisfied in the same manner as described above. Further, since (FB) is fixed, (F
As long as -B) satisfies the above condition, the denominator of the equation (1) only increases in the region where _VAV is small, so that the above condition can be easily satisfied. Thus an advantageous way in the area V _AV is small.

A fourth embodiment of the present invention will be described with reference to the accompanying drawings. Note that the same components as those in the related art are denoted by the same reference numerals as those in the related art. 2 and 3, reference numeral 30 denotes a driving roller driven by the motor 20, and reference numeral 31 denotes a rotating roller for guiding the bar 3. 32 and 33 are cooling fluid passages 34 and 35, respectively.
This is a cooling rotary roller rotatably supported by shafts 36 and 37 formed around the center. Although not shown, the cooling rotary roller 33 is pressed against the cooling rotary roller 32 by a spring or its own weight. The outer shape of each of the cooling rotary rollers 32 and 33 is shaped like a drum in order to increase the contact area with the bar 3 and increase the cooling efficiency of the bar. The shafts 36 and 37 and the cooling rotary roller 3
The space between 2 and 33 is lubricated with graphite or molybdenum disulfide as necessary.

In this configuration, in FIG. 2, the rod 3 retreats from the liquid surface 4 and its tip 5 rests at the R position, and the tip 5 is cooled by the cooling rollers 32 and 33, respectively. become. When cooled, the rod 3 is then moved to the liquid level 4
The temperature of the tip 5 becomes hard to rise when it is sent toward the liquid surface 4 and comes into contact with the liquid surface 4, and the amount of the tip that melts into the liquid surface 4 can be reduced.

At this time, the bar tip by T _BS> T _FS and, T _BS i.e. wherein each of the cooling rollers 32, 33 and bars 3 to lengthen the time that the stop retracted from the liquid surface 4 in the formula (1) The portion is sufficiently cooled, and the amount of the rod material 3 that melts into the liquid surface 4 can be reduced more effectively.

In the above example, the cooling member that contacts the bar 3 is two rotating rollers. However, if the cooling capacity is sufficient, one cooling rotating roller may be used. The cooling member does not necessarily need to be rotated, and may be a fixed member cooled with water or the like if wear of the cooling member with the bar 3 does not matter.

In the above example, the speed pattern has been described in the form of a trapezoidal wave, but the present invention is not limited to this.
Alternatively, the acceleration / deceleration may be a smooth sinusoidal wave or the like.

Further, the method of transferring the bar 3 is not limited to the drive roller as described above, and a method of driving a chain, a belt, a rope, or the like and engaging the bar with them may also use a feed screw. It may be a method.

As described above, the shape of the rod is all cylindrical and the number is one as an example. However, the shape may be prismatic, plate, or the like as long as the material is long, or the number may be plural. .

EFFECT OF THE INVENTION As is clear from the above description, the vapor deposition material supply method and apparatus of the present invention can reduce the temperature fluctuation of the liquid surface during the vapor deposition material supply and the fluctuation of the vapor deposition rate. As a result, the uniformity of the film thickness in the pass film formation can be improved.

Further, even when the rod is composed of a plurality of components having different evaporation rates, the variation in the composition ratio of the steam can be reduced. As a result, it is possible to improve the uniformity of the composition ratio in the passing direction when performing the passing film formation.

[Brief description of the drawings]

FIG. 1 is a diagram showing a transfer speed pattern of a bar in the first, second, third and fifth embodiments of the present invention. FIG. 2 is a partial sectional view showing a fourth embodiment of the present invention. The figure shows Y- in FIG.
FIG. 4 is a partial sectional view showing a conventional vapor deposition material supply method and its apparatus, and FIG. 5, FIG. 6, FIG.
FIG. 8 is a side sectional view showing the molten state of the tip of the rod in the conventional vapor deposition material supply method, FIG. 9 is a graph showing the evaporation rate fluctuation in the conventional vapor deposition material supply method, and FIG. 1 is a partial cross-sectional view illustrating another example of a material supply device,
FIG. 11 is a partial cross-sectional view showing a vapor deposition material supply apparatus according to one embodiment of the invention filed by the inventor, and FIG. 12 is a diagram showing a transfer speed pattern of a bar in one embodiment of the invention filed by the inventor. , FIG. 13 is a graph showing a comparison of the evaporation rate fluctuation of each supply method, FIG. 14 is a side sectional view showing an enlarged main part of FIG. 11, FIG. 15 and FIG. 3 is a side sectional view showing a molten state of FIG. DESCRIPTION OF SYMBOLS 1 ... Vapor deposition material, 2 ... Crucible, 3 ... Bar material, 8 ... Substrate, 9 ... Thin film, 14, 30 ... Drive roller, 32, 33 ... Cooling rotation roller, 20 ... Motor, 21 …… Drive circuit, 22 ……
Arithmetic circuit, 23: Memory, 24: Average transfer speed command, 10
0 ... Control means.

────────────────────────────────────────────────── ─── Continued on the front page (72) Inventor Kayoko Kodama 1006 Kazuma Kadoma, Kadoma City, Osaka Inside Matsushita Electric Industrial Co., Ltd. Field (Int. Cl. ⁶ , DB name) C23C 14/00-14/58

Claims (5)

(57) [Claims] 1. A vapor deposition material contained in a crucible is heated and melted, and the vapor generated from the vapor deposition material is attached to a substrate to form a thin film. In the method of supplying a deposition material, the transfer speed of the supply long deposition material transferred toward the liquid surface of the deposition material melted in the crucible is set such that the direction toward the liquid surface is +, and the direction away from the liquid surface is +. When-is set to-, the direction is alternately switched to the + direction and the-direction, and the + direction is averaged, and the amount of the vapor deposition material which is in contact with the liquid surface and melts and melts into the liquid surface is determined per 1 +-direction operation. A method of supplying a deposition material, wherein the moving speed is set so as not to exceed an advance amount of the deposition material. 2. The method according to claim 1, wherein the vapor deposition material contained in the crucible is heated and melted, and vapor generated from the vapor deposition material is adhered to a substrate to form a thin film. When the transfer speed of the supplied long deposition material for transfer is + in the direction toward the deposition material and-in the direction away from the deposition material, the deposition material is alternately switched to the + and-directions, and the deposition material is placed in the crucible. A vapor deposition material supply device for supplying the long vapor deposition material for supply (V
_AV ) Based on the command, V _AV = (FB) / ( _TFD + _TBD + _TFS + _TBS ) (1) where F: + direction transfer amount B:-direction transfer amount (constant) _TFD : + Direct transfer net time T _FS : + direction transfer pause time (constant) T _FS ≧ 0 T _BD : − direction transfer net time (constant) T _BS : − direction transfer pause time (constant) T _BS > T _FS And a control means for driving the supply long evaporation material based on the calculated F and _TFD . 3. A vapor deposition material contained in a crucible is heated and melted, and vapor generated from the vapor deposition material is adhered to a substrate to form a thin film toward the vapor deposition material melted in the crucible. When the transfer speed of the supplied long deposition material for transfer is + in the direction toward the deposition material and-in the direction away from the deposition material, the deposition material is alternately switched to the + and-directions, and the deposition material is placed in the crucible. An apparatus for supplying a deposition material to be supplied, wherein the average transport speed (V _AV ) of the long deposition material for supply is provided.
Based on the command, _VAV = (FB) / ( _TFD + _TBD + _TFS + _TBS ) (1) where F: + direction transfer amount (constant) B:-direction transfer amount (constant) _TFD : + Direction transfer net time (constant) T _FS : + direction transfer pause time (constant) T _FS ≥ 0 T _BD :-direction transfer net time (constant) T _BS :-direction transfer pause time T _BS > T _FS performed, the vapor deposition material supply apparatus characterized by comprising a control means for driving the feed long deposition material at the calculated T _BS. 4. A means for heating and melting a vapor deposition material contained in a crucible and adhering vapor generated from the vapor deposition material to a substrate to form a thin film, and a liquid surface of the vapor deposition material melted in the crucible. When the transfer speed of the supply long vapor deposition material transferred toward the liquid surface is + in the direction toward the liquid surface and-in the direction away from the liquid surface, the transfer direction is alternately switched between the + direction and the-direction, and on average. A vapor deposition material supply device, comprising: a vapor deposition material transporting means for transporting the vapor deposition material as a + direction; and a means for cooling the vicinity of the tip of the vapor deposition material toward the liquid surface. 5. A means for heating and melting a vapor deposition material contained in a crucible and adhering vapor generated from the vapor deposition material to a substrate to form a thin film, and a liquid surface of the vapor deposition material melted in the crucible. When the transfer speed of the supply long vapor deposition material transferred toward the liquid surface is + in the direction toward the liquid surface and-in the direction away from the liquid surface, the transfer direction is alternately switched between the + direction and the-direction, and on average. A vapor deposition material transporting device for transporting the vapor deposition material as a positive direction, and a device for cooling the vicinity of the tip end of the vapor deposition material toward the liquid level, wherein a long vapor deposition material for supply is provided. the average transfer rate of _{(V AV) V AV = (} F-B) based on the command _{/ (T FD + T BD +} T FS + T BS) ... (1) F: + directional movement amount B: - directional movement amount T _FD: + direction transfer net time T _FS: + direction transfer pause time T _FS ≧ 0 T _BD: - direction transfer Taste Time T _BS: - perform directional movement quiescent time T _BS> T _FS becomes operational, the vapor deposition material supply, characterized in that it comprises a control means for driving the feed long deposition material at calculated each value apparatus.