JP2937564B2 - Semiconductor device - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device, and more particularly to a semiconductor device which is optimally used for a DRAM having a capacity of, for example, 4 Mbit or more and which can mount a large semiconductor chip in a small semiconductor package.

[0002]

2. Description of the Related Art Conventionally, the above-described large semiconductor chip is mounted on a small semiconductor package, for example, as described in Nikkei Microdevice, May 1988, No. 54.
From page 57 to page 57, "Hidden Ball, Lead Frame for Putting Large Chip in 300 Mills" has been proposed in which the die pad of the lead frame is eliminated and this inner frame is routed above or below the semiconductor chip. I have.

[0003] As shown in FIGS. 3 and 4, an insulating tape 2 such as a polyimide tape is pasted on the upper surface of a semiconductor chip 1, and inner leads 3 a of some leads 3 are mounted on the upper surface of the insulating tape 2. After the electrodes 1a of the semiconductor chip 1 are electrically connected to the tips of the inner leads 3a with the bonding wires 4, the outer leads 3b are exposed to the outside and sealed with a sealing resin 5. The semiconductor device is configured by stopping and performing post-processes.

Here, the bonding of the bonding wires 4 to the tips of the inner leads 3a located on the insulating tape 2 is performed on the insulating tape 2 using the semiconductor chip 1 as a base.

[0005]

However, since the bonding of the bonding wires to the inner leads is performed on the insulating tape as the buffer member as described above, the ultrasonic waves and the load are sufficiently transmitted during the bonding. Instead, the bonding of the bonding wires here may be difficult and unstable.

Further, when foreign matter such as silicon is adhered on the semiconductor chip and wire bonding to the inner lead is performed on the foreign matter, the buffer is not sufficiently performed by the insulating tape, and the semiconductor chip as a base is not formed. It may be damaged, and it is not preferable to perform wire bonding to the inner leads on the semiconductor chip in order to obtain reliability as a semiconductor device.

Further, as shown in FIGS. 3 and 4, the inner lead sometimes includes a part of a lead that is considerably shorter than the other leads. It is considered that there is a problem that the pull-out strength of the lead is deteriorated.

SUMMARY OF THE INVENTION In view of the above problems, the present invention allows a large semiconductor chip to be mounted on a small semiconductor package, eliminates wire bonding to the inner leads on the semiconductor chip, and reduces the length of the inner leads. The purpose is to provide something that can be taken sufficiently.

[0009]

In order to achieve the above object, a semiconductor device according to the present invention has an insulating tape disposed on an upper surface of a semiconductor chip, and a lead tip portion disposed on the insulating tape. In a semiconductor device in which a tip of an inner lead of a lead is electrically connected to each electrode of the semiconductor chip, a wiring extending to a side of the insulating tape is provided on an upper surface of the insulating tape. Electrically connect the tip of the inner lead of each lead with the tip on the tape and each electrode of the semiconductor chip, and further extend the inner lead by inserting the wiring into the inside of the insulating tape. It is something to do.

[0010]

According to the present invention constructed as described above, since the tip of each inner lead and each electrode of the semiconductor chip are connected via the wiring provided on the insulating tape, first, the inner lead and the insulating tape are connected. By bonding one end of the wiring and then bonding the other end of the wiring to the electrode of the semiconductor chip, wire bonding on the semiconductor chip can be eliminated.

[0011] Further, by extending the above-mentioned wiring into the inside of the insulating tape and lengthening the inner lead, it is possible to improve the moisture resistance and pull-out strength of the lead.

[0012]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS One embodiment of the present invention will be described below with reference to FIGS.

For example, a DR having a capacity of 4 Mbit or more
On the upper surface of the semiconductor chip 1 serving as an AM, an insulating tape 2 serving as a buffer member such as a polyimide tape is attached with the electrodes 1a provided on both side edges thereof being exposed.

The surface of the insulating tape 2 is provided with a plurality of wirings 6 which are bent in the shape of a hook and extend in the width direction, the ends of which protrude to the side of the insulating tape 2. 6 is bent downward so that the lower surface of the protruding end is located below a plane formed by the back surface of the insulating tape 2.

The base end of each wiring 6 is connected via a bump 7 to the tip of an inner lead 3a of a linear lead 3 arranged on the upper surface of the insulating tape 2, and the protruding end is connected to this end. The provided projection 6a and the bump 8 are provided.
Are connected to the respective electrodes 1a of the semiconductor chip 1 via the wirings 6, whereby the respective electrodes 1a of the semiconductor chip 1 and the tips of the inner leads 3a of the leads 3 are electrically connected via the respective wires 6. The inner leads 3a and the wirings 6 do not overlap each other.

Further, the lead 3 is provided with a stepped portion 3c which is continuous on both side surfaces and a lower surface thereof, thereby making the inner lead 3a from the stepped portion 3c to the tip end thinner than the outer lead 3b. It is designed to improve moisture resistance and lead pull-out strength.

The semiconductor device is formed by resin-sealing with the sealing resin 5 in a state where the outer leads 3b are exposed to the outside.

The connection between the end of each inner lead 3a and each electrode 1a of the semiconductor chip 1 by the wiring 6 provided on the insulating tape 2 is performed as follows.

That is, first, the inner lead 3a and one end of the wiring 6 of the insulating tape 2 are joined via the bump 7, and thereafter, the other end of the wiring 6 and the electrode 1a of the semiconductor chip 1 are connected.
And are joined. This eliminates wire bonding on the semiconductor chip 1 and prevents damage to the semiconductor chip due to bonding.

Further, the distance L from the mold outer frame to the junction between the inner lead 3a and the wiring 6 is increased by making the inner lead 3a enter the inside of the upper surface of the semiconductor chip 1, thereby increasing the moisture resistance. At the same time, the lead pull-out strength can be improved.

[0021]

Since the present invention has the above configuration,
A large semiconductor chip can be mounted on a small semiconductor package, and the tip of each inner lead and each electrode of the semiconductor chip are connected through wiring provided on an insulating tape. Since one end of the wiring of the insulating tape can be joined, and then the other end of this wiring and the electrode of the semiconductor chip can be joined, thereby eliminating wire bonding on the semiconductor chip, It is possible to prevent poor bonding of the inner leads and damage to the semiconductor chip during bonding.

Further, the wiring provided on the insulating tape can be inserted into the inside of the insulating tape to lengthen the inner lead, whereby the moisture resistance and the pull-out strength of the lead can be improved. is there.

[Brief description of the drawings]

FIG. 1 is a plan view showing a state in which a semiconductor chip and inner leads are connected according to an embodiment of the present invention.

FIG. 2 is an enlarged sectional view of a main part after resin sealing.

FIG. 3 is a partially cutaway perspective view showing a conventional example.

FIG. 4 is a plan view of the same.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Semiconductor chip 1a Same electrode 2 Insulating tape 3 Lead 3a Inner lead 3b Outer lead 5 Sealing resin 6 Wiring.

Claims (1)

(57) [Claims] 1. An insulating tape is disposed on an upper surface of a semiconductor chip.
Then , place the lead tips on this insulating tape,
In a semiconductor device in which the tip of the inner lead of the lead is electrically connected to each electrode of the semiconductor chip, a wiring extending to the side of the insulating tape is provided on the upper surface of the insulating tape, and the wiring is formed through the wiring. and each electrode tip and the semiconductor chip of each lead of the inner leads arranged tip portion on the insulating tape electrically connected respectively, the insulating tape
The wiring applied to the tape to the inside of the tape
A length of the inner lead is increased .