JP3039541B2 - Manufacturing method of liquid crystal display device - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a liquid crystal display device.
Manufacturing method , especially separated lenses were formed for each picture element
The present invention relates to a method for manufacturing a liquid crystal display device .

[0002]

2. Description of the Related Art Conventionally, P has been used as a passivation film of a switching element (TFT) used in a liquid crystal display device.
SG (phospho-silicate glass) or plasma nitride film (P-SiN film) is used.

[0003] In particular, when a P-SiN film is used as a passivation film, its mechanical strength is high, so that the switching element can be protected from scratches, and the invasion of moisture into the switching element can be prevented. Further, since the hydrogen-rich H _2, hydrogen H ₂ is supplied to the channel region of the switching element has the advantage that leads to improved properties.

Next, P-Si is used as a passivation film.
FIGS. 17 to 17 show a conventional method of manufacturing a liquid crystal display device using an N film.
This will be described with reference to FIG.

First, as shown in FIG. 17A, a switching element Q of a gate cell aligned type TFT is formed at a required position on an insulating substrate 41 made of glass or the like. Here, 42 is an active layer, 43 is a gate insulating film, and 44 is a gate electrode selection line. After that, an interlayer insulating film (for example, PSG) 45 is formed on the entire surface including the switching element Q.

Next, as shown in FIG. 17B, windows 46s and 46d are formed in the interlayer insulating film 45 at locations corresponding to the source region 42s and the drain region 42d of the active layer 42.

[0007] Next, as shown in FIG.
After the layers are formed, the signal lines 47 are formed by patterning. This signal line 47 is electrically connected to drain region 42d through window 46d.

Next, as shown in FIG. 18D, after an interlayer insulating film (for example, PSG) 48 for buffer is formed on the entire surface, a plasma nitride film (P-SiN film) for passivation is formed on the upper surface of the interlayer insulating film 48. ) 49 is formed.

Next, as shown in FIG. 18E, windows 50 penetrating through the P-SiN film 49 and the interlayer insulating films 48 and 45 are formed at positions corresponding to the source regions 42s.
A transparent conductive film 51 is formed on the entire surface. After that, the transparent conductive film 51 is patterned to form a transparent electrode 52. At this time, the transparent electrode 52 has a shape separated for each picture element by patterning.

Next, as shown in FIG. 18F, when the substrate 53 and the substrate 41 are opposed to each other on the other insulating substrate 53, wiring portions (selection lines 44, signal lines 47, etc.) are present. The light shielding layer 54 is formed at a position corresponding to the (portion) and the switching element Q. Thereafter, a counter electrode 55 is formed on the entire surface including the light shielding layer 54. The transparent electrode 52 on the substrate 41 and the counter electrode 55 on the substrate 53 are subjected to a molecular orientation treatment.

Next, as shown in FIG. 19G, the substrate 41 and the substrate 53 are sealed with a transparent electrode 52 and a counter electrode 55 facing each other and a spacer (not shown). After the liquid crystal layer 56 is injected, the injection port is sealed to obtain a liquid crystal display device B according to a conventional example.

[0012]

The above-mentioned liquid crystal display device B
In the above, a large number of picture elements are arranged in a matrix, and each picture element is controlled by an external signal, that is, a transparent electrode 52 formed separately for each picture element and facing the transparent electrode 52. The liquid crystal is turned ON / OFF with the formed counter electrode 55 to display an image.

Incidentally, the transparent electrode 52 is, as described above,
Each pixel is separated, and there is always a portion without the transparent electrode 52. This portion always transmits light, causing a decrease in contrast.

Therefore, a light shielding layer 54 is formed on the inner surface of the substrate 53 corresponding to the portion where the transparent electrode 52 is not provided.
G). In particular, since the liquid crystal display device B employs an active matrix driving method, the switching element Q is formed for each picture element. Therefore, the light shielding layer 54 is also formed at a position corresponding to the switching element Q.

However, since the light shielding layer 54 does not transmit light, the amount of light reaching the transparent electrode 52 is reduced. In particular, since the area ratio (opening ratio) of the portion without the light shielding layer 54 is only about 50%, the light utilization factor is deteriorated.

The present invention has been made in view of the above points, and a liquid crystal display having a high light utilization rate by reducing the loss of incident light.
It is intended to provide a method of manufacturing the device .

[0017]

[0018]

[0019]

[0020]

[0021]

[0022]

[0023]

SUMMARY OF THE INVENTION The present invention relates to a switching system.
A step of forming the first substrate 1 having the element Q, a step of bonding the second substrate 13 to the first substrate 1 via a predetermined gap, and a step of sealing the electro-optical material 16 in the gap ,
Forming a groove 22 made of a transparent material 21 on a side opposite to the gap 16 on the second substrate 13.

[0024] The present invention is the manufacturing method of the liquid crystal display device, the step of forming the groove 22, a step of applying the transparent material 21, and the step of patterning the transparent material 21,
Heat treating the transparent material 21 .

The present invention comprises a step of forming a first substrate 1 having a switching element Q, a step of bonding a second substrate 13 to the first substrate 1 via a predetermined gap, A method for manufacturing a liquid crystal display device, comprising: a step of enclosing an optical substance 16; and a step of forming a projection 31 made of the same material as the second substrate 13 on the second substrate 13 on a side opposite to the gap 16. is there.

According to the present invention, in the above-mentioned method for manufacturing a liquid crystal display device, the step of forming the projections 31 comprises the step of:
3 is etched.

[0027]

[0028]

[0029]

According to the above-described manufacturing method of the liquid crystal display device of the present invention, the transparent substrate is formed on the second substrate 13 on the side opposite to the gap 16.
By forming the groove 22 made of the material 21, it is possible to manufacture a liquid crystal display device that can guide the light incident on the portion without the transparent electrode 12 to the transparent electrode 12 by the groove 22 .

According to the above-described method of manufacturing a liquid crystal display device of the present invention, the second substrate 13 is provided on the side opposite to the gap 16 on the second substrate 13.
By forming the projections 31 made of the same material as that of the substrate 13, it is possible to manufacture a liquid crystal display device that can similarly guide the light incident on the portion without the transparent electrode 12 by the projections 31 to the transparent electrode 12. .

[0032]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Prior to the description of the embodiments of the present invention, a liquid crystal display device in an active matrix driving system and a method of manufacturing the same will be described as a reference example of the present invention.
1 to 4 are process diagrams showing a method for manufacturing a liquid crystal display device in an active matrix driving method according to a reference example of the present invention. Hereinafter, the steps will be described in order.

First, as shown in FIG. 1A, a switching element Q of a gate cell aligned type TFT is formed at a required position on a transparent insulating substrate 1 made of glass or the like. Here, reference numeral 2 denotes an active layer made of a polycrystalline silicon thin film;
Denotes a gate insulating film made of SiO ₂ or the like, and 4 denotes a gate electrode selection line made of a polycrystalline silicon layer doped with an N-type impurity. Thereafter, an interlayer insulating film (for example, PSG) 5 is formed on the entire surface including the switching element Q.

As a method for forming the active layer 2, CVD is used.
Although there is a (chemical vapor deposition) method, this method has a disadvantage that the grain size is not uniform and the surface is uneven. Therefore, in this example, first, an amorphous silicon thin film having a thickness of about 800 ° on the substrate 1 (after forming a polycrystalline silicon thin film, implanting Si ions to make it amorphous).
Heat treatment (for example, 700 ° C., 5 to 10 minutes)
⁸ / cm ³ · sec or more density nuclei (polycrystalline silicon nuclei for growing, so-called seed crystal, micro grain) after caused the, ¹⁰⁶ / cm ³ · sec nucleus following density A heat treatment (for example, at 600 ° C. for 5 to 10 hours) is performed at a temperature corresponding to the speed at which the particles are generated, and solid phase growth is performed to form a polycrystalline silicon thin film 2 having a uniform grain size.

Normally, the amorphous silicon thin film is subjected to one heat treatment (for example, at 600 ° C. for 30 hours) to grow grains in the amorphous silicon thin film to form the polycrystalline silicon thin film 2. In this case, as shown in FIG. 5, the generation of nuclei is time-dependent, and initially only a small number of nuclei are generated, but increase rapidly with time. For this reason,
The grain growth of the nucleus generated first grows larger by the time difference than the nucleus generated later, and as shown by the curve I in FIG. Variations occur. If the thin film 2 is used as an active layer of the switching element Q, a channel is formed by one grain, or a channel is formed by several grains, causing variations in characteristics.

Therefore, in this example, as described above, the heat treatment is performed for 2 hours.
By performing nuclei evenly in the first relatively high-temperature heat treatment and gradually growing grains in the next low-temperature heat treatment, as shown by curve II in FIG. The grains have uniformity throughout the thin film 2. Therefore, in this example, the characteristics of the switching element Q do not vary. In addition, as can be seen from the heat treatment time, the time is usually 30 hours, but in this example, it can be completed in about 10 hours at most.

The thickness of the amorphous silicon thin film is 800 °
If it is thicker, the nucleation rate increases, so that the time of the first heat treatment can be shortened. Further, laser annealing may be used in this heat treatment. In this case, the heat treatment time can be further reduced.

As the final grain size,
It may be smaller than the channel length, for example, 5 μm or less.

After the second heat treatment, a laser (for example, an excimer laser) that emits light having a short wavelength with an energy that does not melt the polycrystalline silicon thin film 2 is applied to reduce the trap density at the grain boundaries. You may do so. In this case, the heat treatment is performed at a temperature not lower than 1000 ° C. and not higher than the melting point of silicon. In this laser annealing, only the trap density at the grain boundary is reduced, and the grain size is maintained without change.

Next, as shown in FIG. 1B, the interlayer insulating film 5
Source region 2s and drain region 2 of active layer 2 in FIG.
Windows 6s and 6d are formed at locations corresponding to d.

Next, as shown in FIG. 1C, a signal line 7 is formed by depositing an Al layer on the entire surface and then patterning it. This signal line 7 is connected to the drain region 2d through the window 6d.
Is electrically connected to

Next, as shown in FIG. 2D, an interlayer insulating film (for example, PSG) 8 for a buffer is formed on the entire surface by, for example, a CVD method or the like, and a plasma nitride film (for passivation) is formed on the interlayer insulating film 8. (P-SiN film) 9 is, for example, CV
It is formed by the D method or the like.

Next, as shown in FIG. 2E, usually, a photoresist 10 is formed in a portion where a transparent electrode 12 to be formed later is to be separated, and then, as shown in FIG. 2F, the photoresist 10 is used as a mask. The P-SiN film 9 and the interlayer insulating film 8 are removed by etching. That is, after the P-SiN film 9 is removed by plasma etching (CF ₄ gas), the interlayer insulating film 8 is removed by wet etching with diluted hydrofluoric acid. At this time, the P-SiN film 9 is not removed by etching with diluted hydrofluoric acid, and the interlayer insulating film 8 is removed by isotropic etching peculiar to wet etching. The interlayer insulating film 8 existing below the portion is removed, and P-
The side end 9a of the SiN film 9 has a so-called overhang shape.

Next, as shown in FIG. 3G, a transparent conductive film (ITO film is used in this example) 11 is formed on the entire surface by sputtering deposition. At this time, the transparent conductive film 11 is electrically connected to the source region 2s via the window 6s. Further, the transparent conductive film 11 is formed by an overhang portion 9 a of the P-SiN film 9.
In the film 11, a portion connected to the source region 2 s becomes a transparent electrode 12. The substrate temperature at this time is set to be equal to or lower than the transition temperature of the transparent conductive film 11. Since the transition temperature of the transparent conductive film (ITO film) 11 is 190 ° C. to 200 ° C., in this example, the substrate temperature is set to 190 ° C. or less (annealing treatment), and the transparent conductive film 11 is deposited.

Next, as shown in FIG.
1 is subjected to a patterning process to achieve complete separation for each picture element. That is, a part of the transparent conductive film 11 formed on the signal line 7 is removed by wet etching using a hydrochloric acid solution or the like. At this time, as described above, since the substrate temperature is set to be equal to or lower than the transition temperature of the transparent conductive film 11 and the transparent conductive film 11 is deposited, the transparent conductive film 11 is deposited.
As can be seen from the X-ray diffraction intensity characteristics in FIG. 7A, since there is no peak indicating crystallinity, the film 11 itself is amorphous, and the etching characteristics in this state are as shown in Table 1 below. And the etching rate is high (using a 25% aqueous solution of HCl as an etching solution). Therefore, the patterning process for the transparent conductive film 11 can be easily performed.

[0046]

[Table 1]

However, the light transmittance of the transparent conductive film 11 is shown in FIG.
As can be seen from the curves I and II of the spectral transmission characteristics, the sheet resistance deteriorates as compared with those annealed above the transition temperature (curves III and IV), and the sheet resistance also deteriorates as can be seen from the sheet resistance characteristics in FIG. (Will be higher).

Therefore, in this example, after the transparent conductive film 11 is patterned, the transparent conductive film 11 is annealed until its transition temperature becomes equal to or higher than its transition temperature (ie, equal to or higher than 200 ° C.). By this annealing treatment, the light transmittance of the transparent conductive film 11 becomes
8, the sheet resistance is reduced as shown in FIG. 9, and the film quality is improved. This is because the peaks P ₁ , P ₂ and P ₃ indicating the crystallization of the transparent conductive film 11 can be seen from the X-ray diffraction intensity characteristics in FIG. 7B.
And the same crystallization state as the characteristic (see FIG. 7C) when the transparent conductive film 11 is deposited by setting the substrate temperature to the transition temperature or higher (here, 200 ° C.) from the beginning. is there.

However, when the transparent conductive film 11 is formed by setting the substrate temperature to the transition temperature or higher from the beginning, the film quality is certainly improved, but the subsequent patterning characteristics are deteriorated. The temperature of the annealing treatment after patterning is 200 ° C.
~ 450 ° C is preferred. This is for 450 ° C or higher
This is because the switching element Q may be affected.

Next, as shown in FIG. 3I, a light shielding layer 14 is formed at a required position on the other insulating substrate 13.
When the substrate 13 and the substrate 1 are opposed to each other, the light shielding layer 14 is formed at a portion corresponding to a wiring portion (a portion of the selection line 4 and the signal line 7 and the like) and a portion of the switching element Q ( (See FIG. 4J). After that, the counter electrode 15 is formed on the entire surface including the light shielding layer 14. The transparent electrode 12 on the substrate 1 and the counter electrode 15 on the substrate 13 are subjected to a molecular orientation treatment.

Next, as shown in FIG.
The liquid crystal display device A according to the present example is obtained by sealing the liquid crystal layer 16 between the substrate 1 and the substrate 13 with the transparent electrode 12 and the counter electrode 15 facing each other and via a spacer (not shown).

As described above, according to this example, the transparent conductive film 1
In the formation of the substrate 1, first, the substrate temperature is set, and
Since the transparent conductive film 11 is deposited at a temperature equal to or lower than the transition temperature of the transparent conductive film 11, the patterning characteristics thereof are improved, the subsequent patterning process is facilitated, and the number of steps can be reduced.

After the patterning of the transparent conductive film 11, a heat treatment is performed so that the temperature of the transparent conductive film 11 is higher than its transition temperature.
The light transmittance of the transparent electrode 12 is improved, the sheet resistance is also reduced, the film quality is improved, and the quality of the liquid crystal display device A can be improved.

In this embodiment, the P-SiN film 49 is formed on the source region 42s in a normal case, that is, as shown in FIG.
After forming the window 50 penetrating through the interlayer insulating films 48 and 45, it can be applied also in the process of patterning and forming the transparent conductive film 51.

In the formation of the switching element Q, particularly the active layer 2, the amorphous silicon thin film is subjected to a two-step heat treatment, that is, the first heat treatment is performed at a relatively high temperature and the second heat treatment is performed at a lower temperature. As a result, the polycrystalline silicon thin film 2 has a grain size substantially equalized, so that variations in characteristics due to variations in grain size can be prevented and the heat treatment time can be significantly reduced.

Further, the P-SiN film 9 for passivation and the interlayer insulating film 8 for buffer are removed by etching while leaving the wiring portion, so that the side end 9a of the P-SiN film 9 is overhanged. Since the transparent conductive film 11 is formed on the upper surface thereof and separated by the overhang portion 9a, the P-SiN film 9 can be left on the wiring, particularly on the switching element Q,
Hydrogen H ₂ in -SiN film 9 can be supplied to the switching element Q. Therefore, the switching characteristics of the switching element Q can be improved, and the liquid crystal display device A
Quality can be improved.

In this embodiment, the interlayer insulating layer 8 and the P-type layer are formed from the source region 2s to the region where the transparent electrode 12 is formed.
Since the SiN film 9 is removed, the step on the source region 2s is reduced, and the step coverage is improved. Therefore,
When the transparent conductive film 11 is formed, disconnection does not occur on the source region 2s, and high reliability of the liquid crystal display device A can be achieved.

Further, the P-SiN remaining in FIG.
Since the side end portion of the film 9 has an overhang shape, the transparent conductive film 11 can be separated for each pixel simultaneously with the subsequent deposition of the transparent conductive film 11 at the time of deposition.

In the above-described reference example, similarly to the conventional liquid crystal display device B shown in FIG. 19G, a large number of picture elements are arranged in a matrix and each picture element is controlled by an external signal. The liquid crystal is turned on / off by a transparent electrode 12 formed separately for each picture element and a counter electrode 15 formed opposite to the transparent electrode 12 to display an image. This transparent electrode 1
2 is divided for each picture element, and as described above, there is always a portion without the transparent electrode 12, and light always passes through this portion, which causes a decrease in contrast. Therefore,
Also in the above reference example, the light shielding layer 14 is formed on the inner surface of the substrate 13 corresponding to the portion where the transparent electrode 12 is not provided (see FIG. 4J). Further, because of the active matrix driving method, the light shielding layer 14 is formed also at a position corresponding to the switching element Q in which the switching element Q is formed for each picture element. Since the light shielding layer 14 does not transmit light, the amount of light reaching the transparent electrode 12 side is reduced, and the light utilization is deteriorated as described above.

Therefore, the present invention is applied to the liquid crystal display device A to improve the light utilization factor. Next, an embodiment of the present invention will be described.

FIG. 10 shows a configuration diagram of a liquid crystal display device according to an embodiment of the present invention. It should be noted that in FIG.
4 are denoted by the same reference numerals, and redundant description is omitted.

In this embodiment, as shown in FIG. 10, a transparent material (for example, a photoresist) 21 is formed on the substrate 13 on the light incident side, and a groove (recess) is formed in a required portion of the transparent material 21. ) 22 is formed. The groove 22 is constituted by two opposed tapered portions (including a curved surface) 22a,
It is formed continuously at a position corresponding to the light shielding layer 14 formed on the inner surface of the substrate 13.

The provision of the groove 22 allows the substrate 1
The light incident on the portion corresponding to the light shielding layer 14 of No. 3
The light is refracted by the second tapered portion 22a and enters the transparent electrode 12 side. Therefore, the groove 22 functions as a so-called lens that refracts light, and supplies all the light incident on the substrate 13 to the transparent electrode 12 side, so that the light utilization rate is improved.

Specifically, for example, as shown in FIG.
The width d = 1 on the inner surface of the glass substrate 13 having a thickness T = 1.1 mm.
In the case where the light shielding layer 14 having a thickness of 0 μm is formed, a transparent material 21 having a thickness t = 1 to 5 μm is formed on the upper surface of the substrate 13, and the transparent material 21 is formed at a position corresponding to the light shielding layer 14. A groove 22 is formed. Here, considering the case where perfect parallel light is incident from above the substrate 13, the groove 2
The angle θ at which the light should be refracted by the second tapered portion 22a is 0.
26 ° is sufficient, and the scattering of light caused by providing the groove 22 can be considered to be negligible.

Therefore, by providing the groove 22 as described above, the loss of the amount of light reaching the transparent electrode 12 can be reduced, and the aperture ratio can be apparently improved. Moreover, in the liquid crystal display device A according to the present embodiment, by always directing the surface on which the groove 22 is formed to the light source side, no image blur occurs at all. Also, higher resolution can be achieved.

Next, a method of forming the groove 22 will be described with reference to FIGS.
It will be described based on FIG. First, as shown in FIG. 12A, a first method forms a photoresist 21A that transmits visible light on a substrate 13 as shown in FIG. 12A, and then corresponds to a portion where a light shielding layer is to be formed later, as shown in FIG. 12B. The portion is subjected to patterning removal (exposure and development) using a photomask or the like. At this time, the patterning is performed so that the distance m between the opening side end portions 21Aa is smaller than the width (indicated by a two-dot chain line) of the light shielding layer 14 to be formed later.

Then, as shown in FIG.
Heat treatment at ~ 200 ° C. At this time, the opening 21Aa of the resist 21A is deformed due to the thermal melting to have a substantially tapered or curved shape as shown in the drawing to form the groove 22. In the case where the distance between the tapered portion 22a has become widely, as shown in FIG. 13, further SiO ₂ film 23 C
If formed by the VD method or the sputtering method, the distance between the tapered portions 24a of the grooves 24 formed on the SiO ₂ film 23 can be reduced.

Next, a second method of forming the groove 22 is as follows.
As shown in FIG. 14A, after a negative resist 21B is formed on the upper surface of the substrate 13 on which the light shielding layer 14 has been formed in advance, light is emitted from the inner surface side of the substrate 13 (the surface on which the light shielding layer 14 is formed). Irradiation exposes the negative resist 21B. At this time, a portion corresponding to the light shielding layer 14 is also irradiated with weak light due to the light diffraction phenomenon.
As shown in FIG. 2B, a portion corresponding to the light shielding layer 14 of the resist 21B is developed into a tapered or curved concave shape to form a groove 22. In this case, a very narrow groove 22 can be obtained because the light diffraction effect is used.

In the above two methods, the resist 21
If the etching rate of A or 21B and the substrate 13 is the same and the sputter etching is performed, that is, if the etch back is performed until the resist 21A or 21B disappears, the substrate 13 is removed.
Since the upper surface follows the shape of the resist 21A or 21B, the groove 22 can be formed in the substrate 13 itself.

Incidentally, as the resist 21A or 21B,
For example, a transparent DeepUV resist that transmits a visible light region is preferable.

In the first method shown in FIG. 12, a low melting point softening material is used in place of the resist 21A, and the low melting point softening material is patterned by a photoresist method. And the groove 22 may be formed by further softening the low melting point softening material.

Next, another embodiment of the present invention will be described. In the above-described embodiment, the groove 22 is formed on the substrate 13 to improve the light utilization rate. However, in this embodiment, as shown in FIG. A projection (projection) 31 having 31a is provided. Note that FIG.
In FIG. 4, components common to those in FIGS. 4J and 10 are denoted by the same reference numerals, and redundant description is omitted.

In this case, the light 11 incident on the tapered portion 31al existing on the left side in the drawing is refracted rightward and is incident on the right transparent electrode 12r side with the light shielding layer 14 interposed therebetween.
Conversely, light l2 incident on the tapered portion 31ar existing on the right side
Is incident on the transparent electrode 12l on the left side, so that the light utilization rate is improved, similarly to the groove 22 shown in FIG. 10 in the above embodiment.

As a method of forming the projections 31, first, as shown in FIG. 16A, a P-SiN film 3 having a different etching rate from the etching rate of the substrate 13 is formed on the substrate 13.
2 is formed, and the light shielding layer 14 of the P-SiN film 32 is formed.
A photoresist 33 is formed at a location corresponding to (not shown in FIG. 16). Thereafter, the P-SiN film 32 is subjected to plasma etching using the photoresist 33 as a mask. At this time, since the etching rate of the P-SiN film 32 is higher than that of the substrate 13, the P-SiN film 32 is etched earlier. As shown in FIG. 16B, a projection 31 having both sides tapered is formed on the substrate 13. The size of the projection 31 is very small, for example, the height h is about 0.3 μm and the width D is about 10 μm.

Then, as shown in FIG. 15, when the light reflecting layer 34 having a nearly acute isosceles triangular cross section with the vertex angle や slightly formed on the light shielding layer 14 together with the protrusion 31,
Light 13 incident obliquely from near 1 can be reflected to the transparent electrode 12 side, and the light utilization rate can be further improved.

In the above-mentioned liquid crystal display device A, an ITO film is used as the transparent electrode film 11, but an SnO ₂ film (Nesa film) or a ZnO film may be used as the transparent electrode film 11.

The manufacturing method of the liquid crystal display device of the present invention is not limited to the above-described embodiment, and may take various other configurations without departing from the gist of the present invention.

[0078]

According to the present invention described above, by forming a lens for each pixel on the incident side of external light in contact with the substrate, the loss of incident light is reduced and the light utilization of the liquid crystal display device is improved. can do.

[Brief description of the drawings]

1A to 1C are process diagrams showing a method for manufacturing a liquid crystal display device according to a reference example of the present invention.

FIGS. 2A to 2F are process diagrams showing a method for manufacturing a liquid crystal display device according to a reference example of the present invention.

FIG. 3 is a process diagram showing a method for manufacturing a liquid crystal display device according to a reference example of the present invention.

FIG. 4 is a process chart showing a method for manufacturing a liquid crystal display device according to a reference example of the present invention.

FIG. 5 is a characteristic diagram showing an annealing time dependency of a grain generation rate.

FIG. 6 is a characteristic diagram showing the number of grains per unit area for each size.

FIG. 7 is a characteristic diagram showing a crystal state of a transparent conductive film by X-ray diffraction. A: The case where the transparent conductive film is deposited by setting the substrate temperature to the transition temperature or lower. B: This is a case where annealing is performed at a transition temperature or higher after vapor deposition. C: The case where the transparent conductive film is deposited by setting the substrate temperature to the transition temperature or higher.

FIG. 8 is a characteristic diagram showing spectral transmission characteristics of a transparent conductive film.

FIG. 9 is a characteristic diagram showing annealing temperature dependence of sheet resistance.

FIG. 10 is a configuration diagram illustrating a liquid crystal display device according to an embodiment of the present invention.

FIG. 11 is an enlarged view showing a main part of FIG. 10;

FIG. 12 is a process chart showing a first method of forming a groove.

FIG. 13 is a configuration diagram illustrating a method of reducing a distance between tapered portions.

FIG. 14 is a process chart showing a second method of forming a groove.

FIG. 15 is a configuration diagram showing another embodiment in which the utilization factor of light is improved.

FIG. 16 is a process chart showing a method of forming a projection.

17A to 17C are process diagrams showing a conventional example.

18A to 18F are process diagrams showing a conventional example.

FIG. 19 is a process drawing showing a conventional example.

[Explanation of symbols]

1, 13 insulating substrate, 2 active layer, 2s source region, 2d drain region, 3 gate insulating film, 4 gate electrode, 5, 8 interlayer insulating film, 7 signal line, 9 PS
iN film, 11 transparent conductive film, 12 transparent electrode, 14 light shielding layer, 15 counter electrode, 16 liquid crystal layer, 21 transparent material, 22 groove, 31 protrusion, A liquid crystal display device, Q switching element

──────────────────────────────────────────────────続 き Continuation of the front page (72) Inventor Meiji Kawamura 6-7-35 Kita-Shinagawa, Shinagawa-ku, Tokyo Inside Sony Corporation (56) References JP-A-3-166518 (JP, A) JP-A JP-A-2-251902 (JP, A) JP-A-10-177104 (JP, A) JP-A-9-101401 (JP, A) (58) Fields investigated (Int. Cl. ⁷ , DB name) G02F 1 / 1335 G02F 1/1333 500 G02F 1/1368

Claims (4)

(57) [Claims] A step of forming a first substrate having a switching element ; a step of bonding a second substrate to the first substrate via a predetermined gap; and enclosing an electro-optical material in the gap. And forming a groove made of a transparent material on the second substrate on the side opposite to the gap. 2. A step of forming the groove includes the steps of applying the transparent material, a step of patterning the transparent material,
請 which comprises a step of heat-treating the transparent material
The method for manufacturing a liquid crystal display device according to claim 1 . 3. A step of forming a first substrate having a switching element , a step of bonding a second substrate to the first substrate via a predetermined gap, and enclosing an electro-optical material in the gap. And forming a protrusion made of the same material as the second substrate on the second substrate on the side opposite to the gap. Wherein the step of forming the projections, claims characterized in that it comprises a step of etching the second substrate
Item 4. The method for manufacturing a liquid crystal display device according to item 3 .