JP3398305B2 - Wiring board and method of manufacturing the same - Google Patents
Wiring board and method of manufacturing the sameInfo
- Publication number
- JP3398305B2 JP3398305B2 JP22964697A JP22964697A JP3398305B2 JP 3398305 B2 JP3398305 B2 JP 3398305B2 JP 22964697 A JP22964697 A JP 22964697A JP 22964697 A JP22964697 A JP 22964697A JP 3398305 B2 JP3398305 B2 JP 3398305B2
- Authority
- JP
- Japan
- Prior art keywords
- epoxy resin
- precursor
- insulating
- cured
- curing agent
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
- H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
- H10W70/68—Shapes or dispositions thereof
- H10W70/682—Shapes or dispositions thereof comprising holes having chips therein
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
- H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
- H10W70/68—Shapes or dispositions thereof
- H10W70/685—Shapes or dispositions thereof comprising multiple insulating layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
- H10W90/754—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL
Landscapes
- Production Of Multi-Layered Print Wiring Board (AREA)
- Manufacturing Of Printed Wiring (AREA)
Description
【0001】[0001]
【発明の属する技術分野】本発明は、半導体素子を収容
するための半導体素子収納用パッケージや混成集積回路
基板等に用いられる配線基板に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wiring board used for a semiconductor element housing package for housing a semiconductor element, a hybrid integrated circuit board and the like.
【0002】[0002]
【従来の技術】従来、配線基板、例えば半導体素子を収
容する半導体素子収納用パッケージに使用される配線基
板は、酸化アルミニウム質焼結体等のセラミックスより
成り、その上面中央部に半導体素子を収容するための凹
部を有する絶縁基体と、この絶縁基体の凹部周辺から下
面にかけて導出されたタングステン・モリブデン等の高
融点金属粉末から成る配線導体とから構成されており、
絶縁基体の凹部底面に半導体素子をガラス・樹脂・ロウ
材等の接着剤を介して接着固定するとともに半導体素子
の各電極を例えばボンディングワイヤ等の電気的接続手
段を介して配線導体に電気的に接続し、しかる後、絶縁
基体の上面に、金属やセラミックス等から成る蓋体を絶
縁基体の凹部を塞ぐようにしてガラス・樹脂・ロウ材等
の封止材を介して接合させ、絶縁基体の凹部内に半導体
素子を気密に収容することによって製品としての半導体
装置となる。そして、配線導体で絶縁基体下面に導出し
た部位を外部の電気回路基板の配線導体に半田等の電気
的接続手段を介して接続することにより、収容する半導
体素子が外部電気回路基板に電気的に接続されることと
なる。2. Description of the Related Art Conventionally, a wiring board, for example, a wiring board used for a semiconductor element housing package for housing a semiconductor element, is made of ceramics such as an aluminum oxide sintered body, and the semiconductor element is housed in the center of its upper surface. And a wiring conductor made of refractory metal powder such as tungsten and molybdenum, which is led out from the periphery of the recess of the insulating base to the lower surface,
The semiconductor element is adhered and fixed to the bottom surface of the recess of the insulating substrate with an adhesive such as glass, resin, or a brazing material, and each electrode of the semiconductor element is electrically connected to a wiring conductor through an electrical connecting means such as a bonding wire. After connecting, a lid made of metal, ceramics, or the like is bonded to the upper surface of the insulating base through a sealing material such as glass, resin, or brazing material so as to close the recess of the insulating base. A semiconductor device as a product is obtained by hermetically housing the semiconductor element in the recess. Then, the semiconductor element to be housed is electrically connected to the external electric circuit board by connecting the portion led out to the lower surface of the insulating substrate with the wire conductor to the wiring conductor of the external electric circuit board through an electrical connecting means such as solder. Will be connected.
【0003】この従来の配線基板は、セラミックグリー
ンシート積層法によって製作され、具体的には、酸化ア
ルミニウム・酸化珪素・酸化マグネシウム・酸化カルシ
ウム等のセラミック原料粉末に適当な有機バインダや溶
剤等を添加混合して泥漿状となすとともにこれを従来周
知のドクターブレード法を採用してシート状とすること
によって複数のセラミックグリーンシートを得、しかる
後、これらのセラミックグリーンシートに適当な打ち抜
き加工を施すとともに配線導体となる金属ペーストを所
定パターンに印刷塗布し、最後にこれらのセラミックグ
リーンシートを所定の順に上下に積層して生セラミック
成形体となすとともにこれを還元雰囲気中約1600℃の高
温で焼成することによって製作される。This conventional wiring board is manufactured by a ceramic green sheet laminating method. Specifically, a suitable organic binder or solvent is added to ceramic raw material powder such as aluminum oxide, silicon oxide, magnesium oxide and calcium oxide. A plurality of ceramic green sheets are obtained by mixing them into a sludge shape and adopting a conventionally known doctor blade method to form a sheet shape. Thereafter, while appropriately punching these ceramic green sheets, A metal paste to be a wiring conductor is printed and applied in a predetermined pattern, and finally these ceramic green sheets are laminated in a predetermined order on top and bottom to form a green ceramic compact, and this is fired in a reducing atmosphere at a high temperature of about 1600 ° C. It is produced by
【0004】しかしながら、この従来の配線基板は、絶
縁基体を構成する酸化アルミニウム質焼結体等のセラミ
ックスが硬くて脆い性質を有するため、搬送工程や半導
体装置製作の自動ライン等において配線基板同士が、あ
るいは配線基板と半導体装置製作自動ラインの一部とが
激しく衝突すると絶縁基体に欠けや割れ・クラック等が
発生し、その結果、半導体素子を気密に収容することが
できず、半導体素子を長期間にわたり正常かつ安定に作
動させることができなくなるという欠点を有していた。However, in this conventional wiring board, since the ceramics such as the aluminum oxide sintered body forming the insulating substrate has a hard and brittle property, the wiring boards may not be connected to each other in a carrying process or an automatic line for manufacturing a semiconductor device. Or, if the wiring board and a part of the semiconductor device manufacturing automatic line collide violently, the insulating substrate may be chipped, cracked, or cracked. As a result, the semiconductor element cannot be housed in an airtight manner, and the semiconductor element is long. It has a drawback that it cannot operate normally and stably over a period of time.
【0005】また、この従来の配線基板の製造方法によ
れば、生セラミック成形体を焼成する際に生セラミック
成形体に不均一な焼成収縮が発生し、得られる配線基板
に反り等の変形や寸法のばらつきが発生し、その結果、
半導体素子と配線導体とを電気的に正確かつ確実に接続
することが困難であるという欠点を有していた。Further, according to this conventional wiring board manufacturing method, when the green ceramic molded body is fired, uneven firing shrinkage occurs in the green ceramic molded body, and the resulting wiring board is deformed such as warped or the like. Variations in dimensions occur, and as a result,
It has a drawback that it is difficult to electrically and accurately connect the semiconductor element and the wiring conductor.
【0006】そこで、配線基板の絶縁基体を従来のセラ
ミックスに代えて無機絶縁物粉末を熱硬化性樹脂により
結合した材料からなる絶縁基板を積層することで形成
し、また配線導体を従来のタングステンやモリブデン等
の高融点金属メタライズに代えて銅等の金属粉末を熱硬
化性樹脂により結合して成る材料で形成した配線基板が
提案されている。Therefore, the insulating substrate of the wiring board is formed by laminating an insulating substrate made of a material in which inorganic insulating powder is bonded by a thermosetting resin instead of the conventional ceramics, and the wiring conductor is formed by the conventional tungsten or tungsten. There has been proposed a wiring board formed of a material obtained by binding metal powder such as copper with a thermosetting resin instead of metallization of a high melting point metal such as molybdenum.
【0007】この無機絶縁物粉末を熱硬化性樹脂で結合
して成る絶縁基体と金属粉末を熱硬化性樹脂で結合して
成る配線導体とから成る配線基板は、熱硬化性樹脂前駆
体と無機絶縁物粉末とを混合して成る半硬化状態の前駆
体シートを準備するとともにこれに適当な打ち抜き加工
を施し、次にこの前駆体シートに熱硬化性樹脂前駆体と
金属粉末とを混合して成る金属ペーストを所定パターン
に印刷塗布し、最後に金属ペーストが印刷塗布された前
駆体シートを積層するとともに約150 〜300 ℃の温度お
よび約4〜100 kgf/cm2 の圧力でホットプレスし
て、これを熱硬化させることによって製作される。A wiring board composed of an insulating substrate formed by bonding the inorganic insulating powder with a thermosetting resin and a wiring conductor formed by bonding a metal powder with the thermosetting resin is a thermosetting resin precursor and an inorganic material. A semi-cured precursor sheet prepared by mixing insulating powder is prepared and subjected to appropriate punching, and then the precursor sheet is mixed with a thermosetting resin precursor and metal powder. The resulting metal paste is applied in a predetermined pattern by printing, and finally the precursor sheet on which the metal paste is applied by printing is laminated and hot pressed at a temperature of about 150 to 300 ° C. and a pressure of about 4 to 100 kgf / cm 2. It is manufactured by thermosetting this.
【0008】この配線基板によれば、絶縁基板となる無
機絶縁物粉末および配線導体となる金属粉末をそれぞれ
靭性に優れる熱硬化性樹脂により結合して成ることか
ら、配線基板同士あるいは配線基板と半導体装置製作自
動ラインの一部とが激しく衝突しても絶縁基体に欠けや
割れ・クラック等が発生することは一切ない。[0008] According to this wiring board, an inorganic insulator powder serving as an insulating substrate and the wiring conductors become metal powder from that formed by combining with a thermosetting resin excellent in toughness, respectively, the wiring board or between the wiring board and the semiconductor Even if a part of the automatic equipment manufacturing line collides violently, there will be no chipping, cracking, or cracking in the insulating substrate.
【0009】またこの配線基板の製造方法によれば、絶
縁基体および配線導体に含有される熱硬化性樹脂の前駆
体を熱硬化させることにより製作されることから、焼成
に伴う不均一な収縮による変形や寸法のばらつきが発生
することはない。Further, according to this method for manufacturing a wiring board, since it is manufactured by thermosetting the precursor of the thermosetting resin contained in the insulating substrate and the wiring conductor, uneven shrinkage due to firing is caused. There is no deformation or variation in dimensions.
【0010】[0010]
【発明が解決しようとする課題】しかしながら、この無
機絶縁物粉末を熱硬化性樹脂で結合して成る絶縁基体と
金属粉末を熱硬化性樹脂で結合して成る配線導体とから
成る配線基板によれば、半硬化状態の前駆体シートをホ
ットプレスで積層する際に、互いに積層される前駆体シ
ートに含有される熱硬化性樹脂前駆体の硬化反応が積層
前にすでに双方とも進行して熱硬化性樹脂前駆体中の反
応基が減少していることから、上下の前駆体シート間で
は熱硬化性樹脂前駆体同士の硬化反応がその分弱くな
る。そのため絶縁基体を構成する各絶縁基板間で熱硬化
性樹脂同士が密に結合されずにこの部分の耐湿性がやや
劣り、このような配線基板を長期間にわたり外部大気中
に放置すると、この絶縁基板間を通って絶縁基体内部に
外部大気中の水分が徐々に浸入して配線導体に腐食を発
生させ、その結果、内部に収容する半導体素子を長期間
にわたり正常かつ安定に作動させることができなくなっ
てしまうという欠点を招来した。However, a wiring board comprising an insulating substrate formed by bonding the inorganic insulating powder with a thermosetting resin and a wiring conductor formed by bonding a metal powder with the thermosetting resin is provided. For example, when the semi-cured precursor sheets are laminated by hot pressing, the curing reaction of the thermosetting resin precursor contained in the precursor sheets to be laminated on each other has already progressed before the lamination and thermosetting. Since the reactive groups in the thermosetting resin precursor are reduced, the curing reaction between the thermosetting resin precursors becomes weaker between the upper and lower precursor sheets. Therefore, the thermosetting resins are not tightly bonded to each other between the insulating substrates that form the insulating substrate, and the moisture resistance of this portion is slightly inferior. If such a wiring substrate is left in the external atmosphere for a long period of time, the insulation Moisture in the external atmosphere gradually infiltrates into the insulating substrate through the space between the substrates, causing corrosion of the wiring conductors, and as a result, the semiconductor elements housed inside can operate normally and stably for a long period of time. It has the drawback of disappearing.
【0011】本発明は上記事情に鑑みて案出されたもの
であり、その目的は、無機絶縁物粉末を熱硬化性樹脂で
結合して成る絶縁基体と金属粉末を熱硬化性樹脂で結合
して成る配線導体とから成る配線基板について、絶縁基
板間からの水分の浸入が有効に防止され、内部に収容す
る半導体素子を長期間にわたり正常かつ安定に作動させ
ることが可能な配線基板を提供することにある。The present invention has been devised in view of the above circumstances, and an object thereof is to bond an insulating substrate formed by bonding an inorganic insulating powder with a thermosetting resin and a metal powder with a thermosetting resin. Provided is a wiring board including a wiring conductor formed of the above-mentioned wiring conductor, in which moisture can be effectively prevented from entering between insulating boards, and a semiconductor element housed inside can be normally and stably operated for a long period of time. Especially.
【0012】また本発明の目的は、無機絶縁物粉末を熱
硬化性樹脂で結合して成る絶縁基体と金属粉末を熱硬化
性樹脂で結合して成る配線導体とから成る配線基板の製
造方法について、絶縁基板間からの水分の浸入が有効に
防止され、内部に収容する半導体素子を長期間にわたり
正常かつ安定に作動させることが可能な配線基板を得る
ことができる製造方法を提供することにある。Another object of the present invention is to provide a method of manufacturing a wiring board comprising an insulating substrate formed by bonding an inorganic insulating powder with a thermosetting resin and a wiring conductor formed by bonding a metal powder with a thermosetting resin. SUMMARY OF THE INVENTION It is an object of the present invention to provide a manufacturing method capable of obtaining a wiring board in which moisture can be effectively prevented from entering between insulating substrates, and a semiconductor element housed inside can be normally and stably operated for a long period of time. .
【0013】[0013]
【課題を解決するための手段】本発明の配線基板は、硬
化剤と反応して硬化するエポキシ樹脂主剤および無機絶
縁物粉末を添加混合したビスマレイミドトリアジン樹脂
から成る半硬化の前駆体シートを複数枚積層して熱硬化
させた、前記無機絶縁物粉末を前記ビスマレイミドトリ
アジン樹脂で結合して成る複数の絶縁基板を積層して成
る絶縁基体の前記絶縁基板同士を、半硬化の前記前駆体
シート間に介在させた硬化剤に誘導されて半硬化の前記
前駆体シート間に滲出した前記エポキシ樹脂主剤と前記
硬化剤との反応により形成されるエポキシ樹脂接着層を
介して多層に接合するとともに、前記絶縁基板間および
/または露出する絶縁基板表面に配線導体を形成して成
ることを特徴とするものである。The wiring board of the present invention is a hard board.
Epoxy resin that cures by reacting with an agent
Bismaleimide triazine resin mixed with edge powder
Heat curing by stacking multiple semi-cured precursor sheets consisting of
Was, the inorganic insulator powder by laminating a plurality of insulating substrates formed by combining with the bismaleimide triazine resin formed
The insulating substrates of the insulating base are
The semi-curing is induced by the curing agent interposed between the sheets.
The epoxy resin base agent exuded between the precursor sheets and the
It is characterized in that it is joined in multiple layers through an epoxy resin adhesive layer formed by reaction with a curing agent, and a wiring conductor is formed between the insulating substrates and / or on the exposed surface of the insulating substrate. .
【0014】また本発明の配線基板の製造方法は、ビス
マレイミドトリアジン樹脂の前駆体に硬化剤と反応して
硬化するエポキシ樹脂主剤および無機絶縁物粉末を添加
混合して前駆体シートを複数準備する工程と、この前駆
体シートを半硬化させる工程と、この半硬化した前駆体
シートの少なくとも1つに配線導体となる金属箔または
熱硬化によって配線導体となる金属ペーストを所定パタ
ーンに被着させる工程と、前記金属箔または前記金属ペ
ーストが被着した半硬化の前記前駆体シートを、間に前
記エポキシ樹脂主剤と反応する硬化剤を介在させて多層
に積層する工程と、この多層に積層された前駆体シート
を加熱し、前記無機絶縁物粉末を熱硬化したビスマレイ
ミドトリアジン樹脂で結合して複数の絶縁基板を形成す
るとともに配線導体を絶縁基板に被着させ、かつ各絶縁
基板同士を前記硬化剤に誘導されて半硬化の前記前駆体
シート間に滲出した前記エポキシ樹脂主剤と前記硬化剤
との反応により形成される硬化したエポキシ樹脂接着層
で接合する工程とを具備することを特徴とするものであ
る。[0014] The method of the wiring substrate manufacturing the present invention, a plurality prepare a precursor sheet was added to and mixed with the epoxy resin main component and the inorganic insulating powder is cured by reaction with hardening agent to the precursor of the bismaleimide triazine resin And the precursor
A step of semi-curing the body sheet, a step of depositing the semi-cured to at least one metal paste for forming the wiring conductor of metal foil or thermosetting of the wiring conductors of the precursor sheet in a predetermined pattern, the metal foil Or said metal pellet
The semi-cured precursor sheet to which the paste is applied, and a step of stacking the precursor sheet laminated in multiple layers with a curing agent that reacts with the epoxy resin main agent interposed therebetween, A plurality of insulating substrates are formed by binding the inorganic insulating powder with a heat-cured bismaleimide triazine resin, and wiring conductors are attached to the insulating substrates, and each insulating substrate is induced by the curing agent to be semi-cured. The precursor
It is characterized in that it comprises a step of joining by the cured epoxy resin adhesive layer is formed by reaction of the pre disappeared epoxy resin main agent and the curing agent exuded between the sheets.
【0015】本発明の配線基板によれば、無機絶縁物粉
末をビスマレイミドトリアジン樹脂で結合して成る複数
の絶縁基板をエポキシ樹脂接着層を介して多層に積層し
たことから、各絶縁基板がエポキシ樹脂接着層を介して
強固に接合されるので絶縁基板間の耐湿性を向上するこ
とができるとともに、エポキシ樹脂接着層が各絶縁基板
間を通しての水分の浸入を有効に防止することができ、
その結果、内部に収容する半導体素子を長期間にわたり
正常かつ安定に作動させることが可能な配線基板とな
る。According to the wiring board of the present invention, since a plurality of insulating boards formed by binding the inorganic insulating powder with the bismaleimide triazine resin are laminated in multiple layers via the epoxy resin adhesive layer, each insulating board is made of epoxy. Since it is firmly bonded via the resin adhesive layer, it is possible to improve the moisture resistance between the insulating substrates, and the epoxy resin adhesive layer can effectively prevent the infiltration of water through between the insulating substrates.
As a result, the wiring board is capable of normally and stably operating the semiconductor element housed therein for a long period of time.
【0016】また本発明の配線基板の製造方法によれ
ば、前駆体シート内部のエポキシ樹脂主剤と前駆体シー
トの間に介在させた硬化剤とが反応することにより各絶
縁基板間に硬化したエポキシ樹脂接着層が形成されるこ
とから、この硬化したエポキシ樹脂接着層により絶縁基
板同士が強固に接合されるので絶縁基板間の耐湿性を向
上することができるとともに、エポキシ樹脂接着層が絶
縁基板間からの水分の浸入を有効に防止することができ
る配線基板を得ることが可能となる。According to the method for manufacturing a wiring board of the present invention, the epoxy resin main component inside the precursor sheet reacts with the curing agent interposed between the precursor sheets to cure the epoxy resin between the insulating substrates. Since the resin adhesive layer is formed, the cured epoxy resin adhesive layers firmly bond the insulating substrates to each other, so that the moisture resistance between the insulating substrates can be improved, and the epoxy resin adhesive layer can be used between the insulating substrates. It is possible to obtain a wiring board that can effectively prevent the entry of moisture from the inside.
【0017】[0017]
【発明の実施の形態】次に、本発明の配線基板およびそ
の製造方法を添付の図面に基づき詳細に説明する。DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, a wiring board and a method for manufacturing the same according to the present invention will be described in detail with reference to the accompanying drawings.
【0018】図1は本発明の配線基板を半導体素子を収
容する半導体素子収納用パッケージに適用した場合の実
施の形態の一例を示す断面図であり、同図において、1
は絶縁基体、2は配線導体である。FIG. 1 is a sectional view showing an example of an embodiment in which the wiring board of the present invention is applied to a semiconductor element housing package for housing a semiconductor element. In FIG.
Is an insulating substrate, and 2 is a wiring conductor.
【0019】絶縁基体1は、例えば酸化珪素・酸化アル
ミニウム・窒化アルミニウム・炭化珪素・チタン酸バリ
ウム・ゼオライト等の無機絶縁物粉末をビスマレイミド
トリアジン樹脂により結合した材料から成る3枚の絶縁
基板1a・1b・1cから構成されており、その上面中
央部に階段状に凹んだ凹部Aを有しており、凹部Aの底
面には半導体素子3が樹脂等の接着剤を介して接着固定
される。The insulating substrate 1 is composed of three insulating substrates 1a, which are made of a material obtained by binding inorganic insulating powders such as silicon oxide, aluminum oxide, aluminum nitride, silicon carbide, barium titanate, and zeolite with a bismaleimide triazine resin. 1b and 1c, and has a recess A recessed stepwise in the center of the upper surface thereof, and the semiconductor element 3 is bonded and fixed to the bottom surface of the recess A via an adhesive such as resin.
【0020】絶縁基板1a・1b・1cに含有される無
機絶縁物粉末は、その粒径が0.1 〜100 μm程度であ
り、絶縁基板1a・1b・1cの熱膨張係数を半導体素
子3の熱膨張係数に近いものとする作用を為すとともに
絶縁基板1a・1b・1cに良好な熱伝導性や耐水性あ
るいは所定の比誘電率等を付与する作用を為す。他方、
絶縁基板1a・1b・1cに含有されるビスマレイミド
トリアジン樹脂は、無機絶縁粉末同士を結合し、絶縁基
体1を所定の形状に保持する作用を為す。The inorganic insulating powder contained in the insulating substrates 1a, 1b and 1c has a particle size of about 0.1 to 100 μm, and the thermal expansion coefficient of the insulating substrates 1a, 1b and 1c is equal to that of the semiconductor element 3. In addition to having a function close to the coefficient, it also has a function of imparting good thermal conductivity, water resistance, or a predetermined relative dielectric constant to the insulating substrates 1a, 1b, 1c. On the other hand,
The bismaleimide triazine resin contained in the insulating substrates 1a, 1b, 1c functions to bind the inorganic insulating powders to each other and hold the insulating substrate 1 in a predetermined shape.
【0021】絶縁基板1a・1b・1cは、無機絶縁物
粉末を靭性に優れるビスマレイミドトリアジン樹脂によ
り結合して成ることから、配線基板同士が衝突した際等
に絶縁基体1に欠けや割れ・クラック等が発生すること
はない。Since the insulating substrates 1a, 1b, 1c are formed by binding the inorganic insulating powders with the bismaleimide triazine resin having excellent toughness, the insulating substrate 1 is chipped, cracked or cracked when the wiring substrates collide with each other. Etc. will not occur.
【0022】また、絶縁基板1a・1b・1cは、その
中に含有される無機絶縁物粉末の含有量が60重量%未満
であると絶縁基体1の熱膨張係数が半導体素子3の熱膨
張係数と比較して極めて大きなものとなり、半導体素子
3が作動時に発生する熱が半導体素子3と絶縁基体1と
に印加されると両者の熱膨張係数の相違に起因した大き
な熱応力が発生して半導体素子3に絶縁基体1からの剥
離や割れを発生させやすくなる傾向にあり、他方、無機
絶縁物粉末の含有量が95重量%を超えると無機絶縁物粉
末をビスマレイミドトリアジン樹脂で強固に結合するこ
とが困難となる傾向にある。従って、絶縁基板1a・1
b・1cの中に含有される無機絶縁物粉末の含有量は60
〜95重量%の範囲が好ましい。Further, in the insulating substrates 1a, 1b, 1c, when the content of the inorganic insulating powder contained therein is less than 60% by weight, the thermal expansion coefficient of the insulating substrate 1 is the thermal expansion coefficient of the semiconductor element 3. When the heat generated during the operation of the semiconductor element 3 is applied to the semiconductor element 3 and the insulating substrate 1, a large thermal stress is generated due to the difference in thermal expansion coefficient between the semiconductor element 3 and the semiconductor element 3. When the content of the inorganic insulating powder exceeds 95% by weight, the inorganic insulating powder is strongly bonded with the bismaleimide triazine resin when the element 3 tends to easily peel or crack from the insulating substrate 1. Tends to be difficult. Therefore, the insulating substrate 1a
The content of the inorganic insulating powder contained in b-1c is 60.
A range of up to 95% by weight is preferred.
【0023】また絶縁基体1は、各絶縁基板1a・1b
・1cが硬化したエポキシ樹脂接着層4a・4bを介し
て多層に接合されている。The insulating substrate 1 is made up of the insulating substrates 1a and 1b.
1c is bonded in multiple layers via the cured epoxy resin adhesive layers 4a and 4b.
【0024】エポキシ樹脂接着層4a・4bは、ビスフ
ェノールA型エポキシ樹脂やノボラック型エポキシ樹脂
・グリシジルエステル型エポキシ樹脂等のエポキシ樹脂
の硬化物から成り、絶縁基板1a・1b・1c同士を強
固に接合するとともに絶縁基板1a・1b・1cの間か
ら水分が浸入するのを防止する作用を為す。The epoxy resin adhesive layers 4a, 4b are made of a cured product of an epoxy resin such as bisphenol A type epoxy resin, novolac type epoxy resin, glycidyl ester type epoxy resin, etc., and firmly bond the insulating substrates 1a, 1b, 1c to each other. In addition, it has the function of preventing moisture from entering between the insulating substrates 1a, 1b and 1c.
【0025】絶縁基体1は、各絶縁基板1a・1b・1
cをエポキシ樹脂接着層4a・4bを介して多層に接合
していることから、このエポキシ樹脂接着層4a・4b
により各絶縁基板1a・1b・1cが強固に接合される
とともに各絶縁基板1a・1b・1cの間から水分が浸
入することが有効に防止され、その結果、凹部A内部に
収容する半導体素子3を長期間にわたり正常かつ安定に
作動させることが可能となる。The insulating substrate 1 is made up of the insulating substrates 1a, 1b, 1
Since c is joined in multiple layers via the epoxy resin adhesive layers 4a and 4b, the epoxy resin adhesive layers 4a and 4b
By this, the insulating substrates 1a, 1b, 1c are firmly joined together, and moisture is effectively prevented from entering between the insulating substrates 1a, 1b, 1c, and as a result, the semiconductor element 3 housed inside the recess A is formed. Can be operated normally and stably for a long period of time.
【0026】なお、エポキシ樹脂接着層4a・4bは、
その厚みが0.5 μm未満では各絶縁基板1a・1b・1
c同士を強固に接合することが困難となる傾向にあり、
10μmを超えると後述する配線導体2が上下の絶縁基板
間で電気的に断線してしまう危険性がある。従って、エ
ポキシ樹脂接着層4a・4bの厚みは0.5 〜10μmの範
囲が好ましい。The epoxy resin adhesive layers 4a and 4b are
If the thickness is less than 0.5 μm, each insulating substrate 1a ・ 1b ・ 1
It tends to be difficult to firmly bond the c's together,
If the thickness exceeds 10 μm, there is a risk that the wiring conductor 2 to be described later may be electrically disconnected between the upper and lower insulating substrates. Therefore, the thickness of the epoxy resin adhesive layers 4a and 4b is preferably in the range of 0.5 to 10 μm.
【0027】さらに絶縁基体1には、その凹部A周辺の
絶縁基板1b上面から絶縁基板1b・1cを貫通して絶
縁基板1c下面に導出する、例えば銅・銀・金・表面が
銀で被覆された銅等の金属粉末をエポキシ樹脂等の熱硬
化性樹脂により結合した多数の配線導体2が配設されて
いる。Further, the insulating base 1 is led out from the upper surface of the insulating substrate 1b around the recess A through the insulating substrates 1b and 1c to the lower surface of the insulating substrate 1c, for example, copper, silver, gold, and the surface is coated with silver. A large number of wiring conductors 2 in which metal powder such as copper is bonded by a thermosetting resin such as an epoxy resin are provided.
【0028】配線導体2は、内部に収容する半導体素子
3を外部電気回路に電気的に接続する作用を為し、その
凹部A周辺の部位には半導体素子3の各電極がボンディ
ングワイヤ5を介して電気的に接続され、またその絶縁
基体1下面に導出する部位は外部電気回路基板に電気的
に接続される。The wiring conductor 2 serves to electrically connect the semiconductor element 3 housed inside to an external electric circuit, and each electrode of the semiconductor element 3 is provided with a bonding wire 5 at a portion around the recess A. Is electrically connected to the external electric circuit board.
【0029】配線導体2に含有される金属粉末は、配線
導体2に導電性を付与する作用を為し、配線導体2にお
ける含有量が70重量%未満では配線導体2の導電性が悪
くなる傾向にあり、他方、配線導体2における含有量が
95重量%を超えると金属粉末を熱硬化性樹脂で強固に結
合することが困難となる傾向にある。従って、配線導体
2に含有される金属粉末は、配線導体2における含有量
が70〜95重量%の範囲が好ましい。The metal powder contained in the wiring conductor 2 acts to impart conductivity to the wiring conductor 2, and if the content in the wiring conductor 2 is less than 70% by weight, the conductivity of the wiring conductor 2 tends to deteriorate. And the content in the wiring conductor 2 is
If it exceeds 95% by weight, it tends to be difficult to firmly bond the metal powder with the thermosetting resin. Therefore, the content of the metal powder contained in the wiring conductor 2 in the wiring conductor 2 is preferably 70 to 95% by weight.
【0030】なお、配線導体2に含有される金属粉末
は、その平均粒径が0.5 μm未満であると金属粉末同士
の接触抵抗が増加して配線導体2の電気抵抗が高いもの
となる傾向にあり、他方、50μmを超えると絶縁基体1
に所定パターンの配線導体2を一般に要求される50〜20
0 μmの線幅に形成するのが困難となる傾向にある。従
って、配線導体2に含有される金属粉末は、その平均粒
径を0.5 〜50μmとしておくことが好ましい。When the average particle diameter of the metal powder contained in the wiring conductor 2 is less than 0.5 μm, the contact resistance between the metal powder particles increases, and the electric resistance of the wiring conductor 2 tends to be high. Yes, on the other hand, if it exceeds 50 μm, the insulating substrate 1
50 to 20 which is generally required to have a wiring conductor 2 of a predetermined pattern
It tends to be difficult to form a line width of 0 μm. Therefore, the metal powder contained in the wiring conductor 2 preferably has an average particle size of 0.5 to 50 μm.
【0031】配線導体2に含有される熱硬化性樹脂は、
金属粉末同士を互いに接触させた状態で結合させるとと
もに配線導体2を絶縁基体1に被着させる作用を為し、
ビスフェノールA型エポキシ樹脂・ノボラック型エポキ
シ樹脂・グリシジルエステル型エポキシ樹脂等のエポキ
シ樹脂や、フェノール樹脂・ポリイミド樹脂・ビスマレ
イミドトリアジン樹脂・熱硬化性ポリフェニレンエーテ
ル樹脂等の熱硬化性樹脂から成る。The thermosetting resin contained in the wiring conductor 2 is
The metal powders are bonded to each other in a state of being in contact with each other, and the wiring conductor 2 is adhered to the insulating substrate 1,
Epoxy resin such as bisphenol A type epoxy resin, novolac type epoxy resin and glycidyl ester type epoxy resin, and thermosetting resin such as phenol resin, polyimide resin, bismaleimide triazine resin and thermosetting polyphenylene ether resin.
【0032】また、配線導体2に含有される熱硬化性樹
脂は、配線導体2における含有量が5重量%未満では金
属粉末同士を強固に結合できないとともに配線導体2を
絶縁基体1に強固に被着させることが困難となる傾向に
あり、他方、配線導体2における含有量が30重量%を超
えると金属粉末同士を十分に接触させることが困難とな
り配線導体2の電気抵抗が大きなものとなる傾向にあ
る。従って、配線導体2に含有される熱硬化性樹脂は、
配線導体2における含有量が5〜30重量%の範囲が好ま
しい。If the content of the thermosetting resin in the wiring conductor 2 is less than 5% by weight, the metal powders cannot be firmly bonded to each other and the wiring conductor 2 is firmly covered on the insulating substrate 1. When the content of the wiring conductor 2 exceeds 30% by weight, it is difficult to bring the metal powders into sufficient contact with each other and the electrical resistance of the wiring conductor 2 tends to be large. It is in. Therefore, the thermosetting resin contained in the wiring conductor 2 is
The content in the wiring conductor 2 is preferably in the range of 5 to 30% by weight.
【0033】また、配線導体2は、その露出する表面に
ニッケルや金等の耐蝕性に優れ、かつボンディングワイ
ヤ5等との接合性に優れる金属をめっき法により1〜20
μmの厚みに被着させておくと、配線導体2が酸化腐食
することを有効に防止することができるとともに配線導
体2とボンディングワイヤ5および外部電気回路基板の
配線導体との接続を容易かつ強固に行うことができる。
従って、配線導体2はその露出する表面にニッケルや金
等の耐蝕性に優れ、かつボンディングワイヤ5等との接
続性に優れる金属をめっき法により1〜20μmの厚みに
被着させておくことが好ましい。The exposed surface of the wiring conductor 2 is made of a metal, such as nickel or gold, which has a high corrosion resistance and a good bonding property with the bonding wire 5 or the like by a plating method.
When the wiring conductor 2 is adhered to a thickness of μm, the wiring conductor 2 can be effectively prevented from being oxidized and corroded, and the wiring conductor 2 and the bonding wire 5 and the wiring conductor of the external electric circuit board can be easily and firmly connected. Can be done.
Therefore, the wiring conductor 2 may be formed by depositing a metal such as nickel or gold, which has excellent corrosion resistance and connectivity with the bonding wire 5 or the like, to a thickness of 1 to 20 μm by plating. preferable.
【0034】かくして上述の配線基板によれば、絶縁基
体1の凹部A底面に半導体素子3を接着固定するととも
に半導体素子3の各電極をボンディングワイヤ5を介し
て配線導体2に電気的に接続し、最後に絶縁基体1の上
面に蓋体6を封止材を介して接合させることにより製品
としての半導体装置となる。Thus, according to the above-mentioned wiring board, the semiconductor element 3 is bonded and fixed to the bottom surface of the recess A of the insulating substrate 1, and each electrode of the semiconductor element 3 is electrically connected to the wiring conductor 2 via the bonding wire 5. Finally, the lid 6 is bonded to the upper surface of the insulating substrate 1 via a sealing material to form a semiconductor device as a product.
【0035】次に、上述の配線基板の製造方法について
図2に示す工程毎の断面図に基づいて説明する。Next, a method for manufacturing the above-mentioned wiring board will be described with reference to the sectional views of each step shown in FIG.
【0036】先ず、図2(a)に示すように、ビスマレ
イミドトリアジン樹脂の前駆体に加熱により硬化剤と反
応して硬化するエポキシ樹脂主剤および無機絶縁物粉末
を添加混合して得た3枚の前駆体シート11a・11b・11
cを準備する。First, as shown in FIG. 2 (a), three sheets obtained by adding and mixing an epoxy resin main component and an inorganic insulating powder which are cured by reacting with a curing agent by heating to a precursor of a bismaleimide triazine resin Precursor sheets 11a, 11b, 11
Prepare c.
【0037】前駆体シート11a・11b・11cは、ビスマ
レイミドトリアジン樹脂の前駆体にビスフェノールA型
エポキシ樹脂・ノボラック型エポキシ樹脂・グリシジル
エステル型エポキシ樹脂等のエポキシ樹脂主剤および酸
化珪素・酸化アルミニウム・窒化アルミニウム・炭化珪
素・チタン酸バリウム・ゼオライト等の無機絶縁物粉末
ならびにメチルセルソルブ等の溶剤を添加混合して得た
ペーストを従来周知のドクターブレード法を採用してシ
ート状となすとともに、約25〜100 ℃の温度で1〜60分
加熱して内部に含有されるビスマレイミドトリアジン樹
脂の前駆体を半硬化させることにより製作される。The precursor sheets 11a, 11b, and 11c are prepared by using a precursor of a bismaleimide triazine resin, an epoxy resin base such as a bisphenol A type epoxy resin, a novolac type epoxy resin, and a glycidyl ester type epoxy resin, and silicon oxide, aluminum oxide, and nitriding. A paste obtained by adding and mixing an inorganic insulating powder such as aluminum, silicon carbide, barium titanate, zeolite, etc. and a solvent such as methyl cellosolve is formed into a sheet by adopting the well-known doctor blade method. It is prepared by heating at a temperature of -100 ° C for 1-60 minutes to semi-cure the precursor of the bismaleimide triazine resin contained therein.
【0038】前駆体シート11a・11b・11cに含有され
るエポキシ樹脂主剤は、後述するように前駆体シート11
a・11b・11cを間にエポキシ樹脂主剤と反応する硬化
剤を介在させて積層し加熱して絶縁基板1a・1b・1
cとする際に前駆体シート11a・11b・11cの間に滲出
して硬化剤と反応して硬化することにより、絶縁基板1
a・1b・1cを接合するエポキシ樹脂接着層4a・4
bを形成する。The epoxy resin base material contained in the precursor sheets 11a, 11b and 11c is the precursor sheet 11 as described later.
Insulating boards 1a, 1b, 1 by laminating a. 11b, 11c with a curing agent that reacts with the epoxy resin base material interposed and heating.
In the case of c, the insulating substrate 1 is leached between the precursor sheets 11a, 11b, and 11c and reacts with the curing agent to be cured.
Epoxy resin adhesive layer 4a ・ 4 for joining a ・ 1b ・ 1c
b is formed.
【0039】なお、前駆体シート11a・11b・11cに含
有されるエポキシ樹脂主剤は、ビスマレイミドトリアジ
ン樹脂の前駆体とエポキシ樹脂主剤との合計量に対する
含有量が1重量%未満では、後述するように半硬化シー
ト11a・11b・11cを間にエポキシ樹脂主剤と反応する
硬化剤を介在させて積層し、これを加熱して絶縁基板1
a・1b・1cとなす際に絶縁基板1a・1b・1cを
接合するエポキシ樹脂接着層4a・4bが十分に形成さ
れず、絶縁基板1a・1b・1cをエポキシ樹脂接着層
4a・4bで強固に接合することが困難となる傾向にあ
る。また、10重量%を超えると絶縁基板1a・1b・1
c内に未硬化のエポキシ樹脂主剤が多量に残存して絶縁
基板1a・1b・1cの強度が低いものとなる傾向にあ
る。従って、前駆体シート11a・11b・11cに含有され
るエポキシ樹脂主剤は、ビスマレイミドトリアジン樹脂
の前駆体とエポキシ樹脂主剤との合計量に対する含有量
が1〜10重量%の範囲が好ましい。The epoxy resin base material contained in the precursor sheets 11a, 11b, 11c is less than 1% by weight based on the total amount of the precursor of the bismaleimide triazine resin and the epoxy resin base material. The semi-cured sheets 11a, 11b, and 11c are laminated on top of each other with a curing agent that reacts with the epoxy resin base material interposed therebetween, and this is heated to insulate the substrate 1.
The epoxy resin adhesive layers 4a, 4b for joining the insulating substrates 1a, 1b, 1c when forming a, 1b, 1c are not sufficiently formed, and the insulating substrates 1a, 1b, 1c are hardened by the epoxy resin adhesive layers 4a, 4b. It tends to be difficult to bond to. Further, if the content exceeds 10% by weight, the insulating substrate 1a ・ 1b ・ 1
A large amount of the uncured epoxy resin base material remains in c, and the strength of the insulating substrates 1a, 1b, 1c tends to be low. Therefore, the content of the epoxy resin base material contained in the precursor sheets 11a, 11b, and 11c is preferably in the range of 1 to 10% by weight based on the total amount of the precursor of the bismaleimide triazine resin and the epoxy resin base material.
【0040】次に図2(b)に示すように前駆体シート
11a・11b・11cのうち2枚の前駆体シート11a・11b
に凹部Aとなる開口A1・A2を、2枚の前駆体シート
11b・11cに配線導体2を引き回すための配線経路とな
る貫通孔B1・B2を各々形成する。Next, as shown in FIG. 2B, a precursor sheet
Two precursor sheets 11a, 11b of 11a, 11b, 11c
Two precursor sheets are provided with openings A1 and A2 to be concave portions A.
Through holes B1 and B2 are formed in 11b and 11c, respectively, which serve as wiring paths for routing the wiring conductor 2.
【0041】前駆体シート11a・11b・11cに形成され
た開口A1・A2および貫通孔B1・B2は、前駆体シ
ート11a・11b・11cに従来周知のパンチング加工法を
施し、前駆体シート11a・11b・11cの各々に所定形状
の孔を穿孔することによって形成される。The openings A1 and A2 and the through holes B1 and B2 formed in the precursor sheets 11a, 11b, and 11c are formed by subjecting the precursor sheets 11a, 11b, and 11c to a conventionally known punching method. It is formed by punching holes of a predetermined shape in each of 11b and 11c.
【0042】次に図2(c)に示すように、前駆体シー
ト11bの上面・前駆体シート11cの上下面および前駆体
シート11b・11cに形成された貫通孔B1・B2内に、
熱硬化して配線導体2となる金属ペースト12を従来周知
のスクリーン印刷法および充填法を採用して所定パター
ンに印刷塗布および充填する。Next, as shown in FIG. 2C, the upper surface of the precursor sheet 11b, the upper and lower surfaces of the precursor sheet 11c, and the through holes B1 and B2 formed in the precursor sheets 11b and 11c,
The metal paste 12 which is heat-cured to form the wiring conductor 2 is applied by printing and filling in a predetermined pattern by using the conventionally known screen printing method and filling method.
【0043】なお、配線導体2となる金属ペースト12と
しては、例えば粒径が0.1 〜20μm程度の銅等の金属粉
末にビスフェノールA型エポキシ樹脂・ノボラック型エ
ポキシ樹脂・グリシジルエステル型エポキシ樹脂等のエ
ポキシ樹脂およびアミン系硬化剤・イミダゾール系硬化
剤・酸無水物系硬化剤等の硬化剤等を添加混合しペース
ト状となしたものが使用される。As the metal paste 12 to be the wiring conductor 2, for example, metal powder such as copper having a particle size of about 0.1 to 20 μm and epoxy such as bisphenol A type epoxy resin, novolac type epoxy resin, glycidyl ester type epoxy resin or the like. A paste is prepared by adding and mixing a resin and a curing agent such as an amine-based curing agent, an imidazole-based curing agent, and an acid anhydride-based curing agent to form a paste.
【0044】次に図2(d)に示すように、前駆体シー
ト11a・11bの下面に加熱によりエポキシ樹脂主剤と反
応する硬化剤13を塗布する。Next, as shown in FIG. 2 (d), a curing agent 13 that reacts with the epoxy resin base material by heating is applied to the lower surfaces of the precursor sheets 11a and 11b.
【0045】前駆体シート11a・11bの下面に塗布され
た硬化剤13は、後述するように、前駆体シート11a・11
b・11cを積層し、これを加熱して絶縁基板1a・1b
・1cとなす際に、前駆体シート11a・11b・11cに含
有されるエポキシ樹脂主剤を誘導して前駆体シート11a
・11b・11cの間に滲出させるとともにこのエポキシ樹
脂主剤と反応して絶縁基板1a・1b・1c間に硬化し
たエポキシ樹脂接着層4a・4bを形成する作用を為
す。The curing agent 13 applied to the lower surface of the precursor sheets 11a and 11b is, as will be described later, the precursor sheets 11a and 11b.
Insulating boards 1a and 1b by stacking b and 11c and heating them
・ When forming 1c, the precursor sheet 11a is formed by inducing the epoxy resin main agent contained in the precursor sheets 11a, 11b, and 11c.
It has the function of leaching between 11b and 11c and reacting with this epoxy resin base material to form hardened epoxy resin adhesive layers 4a and 4b between insulating substrates 1a, 1b and 1c.
【0046】前駆体シート11a・11b下面に塗布される
硬化剤13は、アミン系硬化剤・酸無水物系硬化剤・イミ
ダゾール系硬化剤等の硬化剤が使用され、前駆体シート
11a・11b下面の1cm2 当たりの塗布量が0.1 mg未
満であると、前駆体シート11a・11b・11cを積層し加
熱して絶縁基板1a・1b・1cとなす際に絶縁基板1
a・1b・1cの間に十分な量のエポキシ樹脂接着層4
a・4bを形成することが困難となる傾向にある。ま
た、5mgを超えると上下の絶縁基板間における配線導
体2の電気的接続の信頼性が低いものとなってしまう傾
向にある。従って、前駆体シート11a・11b下面に塗布
される硬化剤13は、前駆体シート11a・11b下面1cm
2 当りの塗布量を0.1 〜5mgとしておくことが好まし
い。As the curing agent 13 applied to the lower surface of the precursor sheets 11a and 11b, curing agents such as amine-based curing agents, acid anhydride-based curing agents, and imidazole-based curing agents are used.
When the coating amount per 1 cm 2 of the lower surface of 11a ・ 11b is less than 0.1 mg, the insulating sheets 1a ・ 1b ・ 1c are laminated and heated to form the insulating substrates 1a ・ 1b ・ 1c.
a sufficient amount of epoxy resin adhesive layer 4 between a, 1b and 1c
It tends to be difficult to form a.4b. If it exceeds 5 mg, the reliability of the electrical connection of the wiring conductor 2 between the upper and lower insulating substrates tends to be low. Therefore, the curing agent 13 applied to the lower surface of the precursor sheets 11a and 11b is 1 cm below the lower surface of the precursor sheets 11a and 11b.
The coating amount per 2 is preferably 0.1 to 5 mg.
【0047】さらに、前駆体シート11a・11b下面に塗
布される硬化剤13をアミン系の硬化剤とすると、このア
ミン系硬化剤が金属ペースト12中の金属粉末表面の酸化
膜を除去するので、その結果、配線導体2の電気抵抗を
低いものとすることができる。従って、前駆体11a・11
b下面に塗布される硬化剤13は、アミン系の硬化剤を用
いることが好ましい。Further, when the curing agent 13 applied to the lower surface of the precursor sheets 11a and 11b is an amine-based curing agent, the amine-based curing agent removes the oxide film on the surface of the metal powder in the metal paste 12, As a result, the electric resistance of the wiring conductor 2 can be reduced. Therefore, the precursor 11a · 11
As the curing agent 13 applied to the lower surface of b, it is preferable to use an amine-based curing agent.
【0048】最後に、前駆体シート11a・11b・11cを
上下に積層して約150 〜300 ℃の温度および約4〜100
kgf/cm2 の圧力でホットプレスし、さらに必要に
応じて150 〜300 ℃の温度で加熱し、前駆体シート11a
・11b・11cに含有されるビスマレイミドトリアジン樹
脂の前駆体を十分に硬化させて無機絶縁物粉末を熱硬化
したビスマレイミドトリアジン樹脂で結合した絶縁基板
1a・1b・1cとなすとともに金属ペースト12中の熱
硬化性樹脂を熱硬化させることにより、金属粉末を熱硬
化性樹脂で結合して成る配線導体2を絶縁基板1a・1
b・1cに被着させ、かつ各絶縁基板1a・1b・1c
同士を前駆体シート11a・11b・11c内のエポキシ樹脂
主剤と硬化剤13との反応により形成される硬化したエポ
キシ樹脂接着層4a・4bで接合することによって、図
1に示すような本発明の配線基板が完成する。Finally, the precursor sheets 11a, 11b and 11c are laminated one above the other to obtain a temperature of about 150 to 300 ° C. and a temperature of about 4 to 100.
The precursor sheet 11a is hot-pressed at a pressure of kgf / cm 2 and further heated at a temperature of 150 to 300 ° C. if necessary.
Insulating substrates 1a, 1b, 1c bonded with a thermally cured bismaleimide triazine resin by sufficiently curing the precursor of the bismaleimide triazine resin contained in 11b, 11c, and in the metal paste 12 The thermosetting resin of 1 is heat-cured to form a wiring conductor 2 formed by bonding metal powders with the thermosetting resin.
b ・ 1c, and each insulating substrate 1a ・ 1b ・ 1c
By bonding the two together with the cured epoxy resin adhesive layers 4a and 4b formed by the reaction of the epoxy resin base material and the curing agent 13 in the precursor sheets 11a, 11b and 11c, the present invention as shown in FIG. The wiring board is completed.
【0049】この場合、ホットプレスする前の前駆体シ
ート11a・11b・11cに含まれるエポキシ樹脂主剤およ
び前駆体シート11a・11b下面に塗布された硬化剤13は
互いに反応しておらず、反応基を多量に含むことから、
前駆体シート11a・11b・11c内部に含まれるエポキシ
樹脂主剤が前駆体シート11a・11bの下面に塗布された
硬化剤13に誘導されて半硬化シート11a・11b・11cの
間に滲出するとともに硬化剤13と反応して絶縁層1a・
1b・1cの間に強固で密に硬化したエポキシ樹脂接着
層4a・4bを形成し、その結果、このエポキシ樹脂接
着層4a・4bにより各絶縁基板1a・1b・1cが強
固に接合されるとともに各絶縁基板1a・1b・1c間
からの水分の浸入を有効に防止可能な耐湿性に優れた配
線基板を提供することができる。In this case, the epoxy resin base material contained in the precursor sheets 11a, 11b, 11c before hot pressing and the curing agent 13 applied to the lower surface of the precursor sheets 11a, 11b do not react with each other, and the reactive group Since it contains a large amount of
The epoxy resin base material contained in the precursor sheets 11a, 11b, 11c is induced by the curing agent 13 applied to the lower surface of the precursor sheets 11a, 11b to exude between the semi-cured sheets 11a, 11b, 11c and cure. Insulating layer 1a
Strong and densely hardened epoxy resin adhesive layers 4a and 4b are formed between 1b and 1c, and as a result, the respective insulating substrates 1a, 1b and 1c are firmly joined by the epoxy resin adhesive layers 4a and 4b. It is possible to provide a wiring board having excellent moisture resistance capable of effectively preventing the intrusion of water from between the insulating boards 1a, 1b, 1c.
【0050】またこの場合、前駆体シート11a・11b・
11cおよび金属ペースト12は熱硬化時に収縮することは
殆どなく、従って、得られる配線基板に変形や寸法のば
らつきが発生することは皆無であり、半導体素子と配線
導体とを正確に接続することが可能となる。In this case, the precursor sheets 11a, 11b,
The 11c and the metal paste 12 hardly shrink during thermosetting, and therefore the obtained wiring board is never deformed or the dimensions are varied, and the semiconductor element and the wiring conductor can be accurately connected. It will be possible.
【0051】なお、本発明は上述の実施の形態の例に限
定されるものではなく、本発明の要旨を逸脱しない範囲
であれば種々の変更は可能である。例えば、上述の実施
の形態の例においては配線導体2は金属粉末を熱硬化性
樹脂により結合してなる材料で形成されていたが、配線
導体2はその一部または全部が金属箔で形成されていて
もよい。この場合、前駆体シート11a・11b・11c表面
に銅箔等の金属箔を貼着するとともに所定パターンにエ
ッチングするか、あるいは所定パターンにエッチングさ
れた金属箔を貼着しておくことにより絶縁基板1a・1
b・1cに被着される。It should be noted that the present invention is not limited to the examples of the above-described embodiments, and various modifications can be made without departing from the scope of the present invention. For example, in the example of the above-described embodiment, the wiring conductor 2 is formed of a material obtained by binding metal powder with a thermosetting resin, but the wiring conductor 2 is partially or entirely formed of a metal foil. May be. In this case, a metal foil such as a copper foil is attached to the surface of the precursor sheets 11a, 11b, 11c and is etched in a predetermined pattern, or the metal foil etched in a predetermined pattern is attached to the insulating substrate. 1a / 1
It is attached to b-1c.
【0052】また、上述の実施の形態の例では本発明の
配線基板を半導体素子を収容する半導体素子収納用パッ
ケージに適用した場合を例にとって説明したが、本発明
の配線基板は混成集積回路基板等に用いられる配線基板
に適用してもよい。In the above-mentioned embodiment, the case where the wiring board of the present invention is applied to a semiconductor element housing package for housing a semiconductor element has been described as an example.
The wiring substrate may be applied to a wiring board used for hybrid integrated circuit board or the like.
【0053】また、上述の実施の形態の例では、配線基
板は3枚の絶縁基板が積層されることにより形成されて
いたが、配線基板は2枚あるいは4枚以上の絶縁基板が
積層されることにより形成されていてもよい。Further, in the above-described embodiment, the wiring board is formed by stacking three insulating boards, but the wiring board is formed by stacking two or four or more insulating boards. It may be formed by
【0054】[0054]
【発明の効果】本発明の配線基板によれば、硬化剤と反
応して硬化するエポキシ樹脂主剤および無機絶縁物粉末
を添加混合したビスマレイミドトリアジン樹脂から成る
半硬化の前駆体シートを複数枚積層して熱硬化させた、
前記無機絶縁物粉末をビスマレイミドトリアジン樹脂で
結合して成る複数の絶縁基板を積層して成る絶縁基体の
絶縁基板同士を、半硬化の前駆体シート間に介在させた
硬化剤に誘導されて半硬化の前駆体シート間に滲出した
エポキシ樹脂主剤と硬化剤との反応により形成されるエ
ポキシ樹脂接着層を介して接合したことから、各絶縁基
板がエポキシ樹脂接着層を介して強固に接合されるとと
もにエポキシ樹脂接着層により絶縁基板間からの水分の
浸入が有効に防止され、内部に収容する半導体素子を長
期間にわたり正常かつ安定に作動させることが可能とな
る。According to the wiring board of the present invention, a curing agent and
Epoxy resin base material and inorganic insulating powder that cure in response
Consisting of bismaleimide triazine resin mixed with
A plurality of semi-cured precursor sheets were laminated and heat-cured,
The inorganic insulator powder formed by laminating a plurality of insulating substrates formed by combining with bismaleimide triazine resin insulating substrate
Insulating substrates were interposed between semi-cured precursor sheets
Leaching between semi-cured precursor sheets induced by curing agent
Since the epoxy resin adhesive layer formed by the reaction of the epoxy resin main agent and the curing agent is used for bonding, each insulating substrate is firmly bonded via the epoxy resin adhesive layer and the epoxy resin adhesive layer is also bonded. The layers effectively prevent the infiltration of moisture from between the insulating substrates, and the semiconductor elements housed inside can be normally and stably operated for a long period of time.
【0055】また本発明の配線基板の製造方法によれ
ば、ビスマレイミドトリアジン樹脂の前駆体に硬化剤と
反応して硬化するエポキシ樹脂主剤および無機絶縁物粉
末を添加混合した複数の前駆体シートを準備するととも
に、間にエポキシ樹脂主剤と反応する硬化剤を介在させ
て積層し、これを加熱することにより無機絶縁物粉末を
熱硬化したビスマレイミドトリアジン樹脂で結合した絶
縁基板が積層された配線基板を得ることから、各絶縁基
板の間に硬化剤に誘導されて前駆体シート間に滲出した
前駆体シート内部のエポキシ樹脂主剤と硬化剤との反応
により形成された硬化したエポキシ樹脂接着層が形成さ
れ、このエポキシ樹脂接着層を介して各絶縁基板同士が
強固に接合した、耐湿性に優れる配線基板を提供するこ
とができる。[0055] The plurality of precursor sheet according to the manufacturing method of the wiring substrate, which was added a mixture of an epoxy resin main agent and an inorganic insulator powder is cured by reaction with hardening agent to the precursor of the bismaleimide triazine resin of the present invention In addition to the above, a wiring layer in which an insulating substrate in which a curing agent that reacts with an epoxy resin base material is interposed between the insulating substrate and the inorganic insulating powder is bonded by a thermosetting bismaleimide triazine resin is laminated by heating the wiring is laminated. from getting board was cured formed by reaction with <br/> precursor sheet inside the epoxy resin main agent and the curing agent exuded between induced by the precursor sheet to the curing agent between the insulating substrate It is possible to provide a wiring board having excellent moisture resistance, in which an epoxy resin adhesive layer is formed, and the insulating substrates are firmly bonded to each other via the epoxy resin adhesive layer.
【0056】以上により、本発明によれば、絶縁基板間
からの水分の浸入が有効に防止され、内部に収容する半
導体素子を長期間にわたり正常かつ安定に作動させるこ
とが可能な配線基板およびその製造方法を提供すること
ができた。As described above, according to the present invention, the infiltration of water from between insulating substrates is effectively prevented, and the semiconductor element housed inside can be normally and stably operated for a long period of time, and the wiring board. A manufacturing method could be provided.
【図1】本発明の配線基板の実施の形態の一例を示す断
面図である。FIG. 1 is a cross-sectional view showing an example of an embodiment of a wiring board of the present invention.
【図2】(a)〜(d)はそれぞれ図1に示す配線基板
の製造方法を説明するための工程毎の断面図である。2A to 2D are cross-sectional views for each step for explaining a method for manufacturing the wiring board shown in FIG.
1・・・・・・絶縁基体 1a、1b、1c・・絶縁基板 2・・・・・・配線導体 3・・・・・・半導体素子 4a、4b・・エポキシ樹脂接着層 11a、11b、11c・・前駆体シート 12・・・・・・金属ペースト 13・・・・・・硬化剤 1 ... Insulating substrate 1a, 1b, 1c ... Insulating substrate 2 ... Wiring conductor 3 ・ ・ Semiconductor element 4a, 4b ... Epoxy resin adhesive layer 11a, 11b, 11c ... Precursor sheet 12 ... Metal paste 13- ・ Curing agent
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.7 識別記号 FI H05K 3/46 H01L 23/14 R 23/12 N (58)調査した分野(Int.Cl.7,DB名) H05K 1/02 H05K 1/03 H05K 1/09 H05K 3/12 H05K 3/46 H01L 23/12 - 23/15 H01B 1/00 - 1/24 ─────────────────────────────────────────────────── ─── Continuation of front page (51) Int.Cl. 7 Identification code FI H05K 3/46 H01L 23/14 R 23/12 N (58) Fields investigated (Int.Cl. 7 , DB name) H05K 1 / 02 H05K 1/03 H05K 1/09 H05K 3/12 H05K 3/46 H01L 23/12-23/15 H01B 1/00-1/24
Claims (2)
主剤および無機絶縁物粉末を添加混合したビスマレイミ
ドトリアジン樹脂から成る半硬化の前駆体シートを複数
枚積層して熱硬化させた、前記無機絶縁物粉末を前記ビ
スマレイミドトリアジン樹脂で結合して成る複数の絶縁
基板を積層して成る絶縁基体の前記絶縁基板同士を、半
硬化の前記前駆体シート間に介在させた硬化剤に誘導さ
れて半硬化の前記前駆体シート間に滲出した前記エポキ
シ樹脂主剤と前記硬化剤との反応により形成されるエポ
キシ樹脂接着層を介して多層に接合するとともに、前記
絶縁基板間および/または露出する絶縁基板表面に配線
導体を形成して成ることを特徴とする配線基板。1. An epoxy resin which is cured by reacting with a curing agent.
Bismareimi mixed with main ingredient and inorganic insulating powder
Multiple semi-cured precursor sheets made of dotriazine resin
Single laminated to thermally cured, the insulating boards of the inorganic insulator powder formed by laminating a plurality of insulating substrates formed by combining with the bi <br/> scan maleimide triazine resin insulating substrate, half
Induced by a curing agent interposed between the precursor sheets for curing
And epoxies exuded between the semi-cured precursor sheets
While bonding in multiple layers via the epoxy resin adhesive layer formed by the reaction of the resin main agent and the curing agent, a wiring conductor is formed between the insulating substrates and / or on the exposed surface of the insulating substrate. A wiring board comprising:
に硬化剤と反応して硬化するエポキシ樹脂主剤および無
機絶縁物粉末を添加混合して前駆体シートを複数準備す
る工程と、該前駆体シートを半硬化させる工程と、該半
硬化した前駆体シートの少なくとも1つに配線導体とな
る金属箔または熱硬化によって配線導体となる金属ペー
ストを所定パターンに被着させる工程と、前記金属箔ま
たは前記金属ペーストが被着した半硬化の前記前駆体シ
ートを、間に前記エポキシ樹脂主剤と反応する硬化剤を
介在させて多層に積層する工程と、該多層に積層された
前駆体シートを加熱し、前記無機絶縁物粉末を熱硬化し
たビスマレイミドトリアジン樹脂で結合して複数の絶縁
基板を形成するとともに配線導体を絶縁基板に被着さ
せ、かつ各絶縁基板同士を前記硬化剤に誘導されて半硬
化の前記前駆体シート間に滲出した前記エポキシ樹脂主
剤と前記硬化剤との反応により形成される硬化したエポ
キシ樹脂接着層で接合する工程とを具備することを特徴
とする配線基板の製造方法。2. A precursor of a bismaleimide triazine resin.
The epoxy resin main agent and an inorganic insulator powder is cured by reaction with hardening agent was added and mixed the steps of a plurality preparing the precursor sheet, a step of semi-curing the precursor sheet, said half
A step of depositing a metal foil to be a wiring conductor or a metal paste to be a wiring conductor by thermosetting on at least one of the cured precursor sheets in a predetermined pattern;
Alternatively, a step of laminating the semi-cured precursor sheet coated with the metal paste in multiple layers with a curing agent that reacts with the epoxy resin main agent interposed therebetween, and a precursor sheet laminated in the multilayer. By heating, the inorganic insulating powder is bonded with a thermosetting bismaleimide triazine resin to form a plurality of insulating substrates, and wiring conductors are adhered to the insulating substrates, and each insulating substrate is induced by the curing agent. Semi-hard
Manufacturing a wiring board characterized by comprising a step of joining an epoxy resin adhesive layer cured is formed by reaction between the precursor before exuded between the sheets disappeared epoxy resin main agent and the curing agent of Method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22964697A JP3398305B2 (en) | 1997-08-26 | 1997-08-26 | Wiring board and method of manufacturing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22964697A JP3398305B2 (en) | 1997-08-26 | 1997-08-26 | Wiring board and method of manufacturing the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH1168268A JPH1168268A (en) | 1999-03-09 |
| JP3398305B2 true JP3398305B2 (en) | 2003-04-21 |
Family
ID=16895467
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP22964697A Expired - Fee Related JP3398305B2 (en) | 1997-08-26 | 1997-08-26 | Wiring board and method of manufacturing the same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3398305B2 (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5709732B2 (en) * | 2011-11-28 | 2015-04-30 | 京セラ株式会社 | Manufacturing method of ceramic multilayer substrate |
-
1997
- 1997-08-26 JP JP22964697A patent/JP3398305B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH1168268A (en) | 1999-03-09 |
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