JP3393769B2 - Wiring board and method of manufacturing the same - Google Patents

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wiring board,
More specifically, the present invention relates to a semiconductor element housing package for housing a semiconductor element, a wiring board used in a hybrid integrated circuit device, and the like.

[0002]

2. Description of the Related Art Conventionally, a wiring board, for example, a wiring board used for a semiconductor element housing package for housing a semiconductor element, is made of ceramics such as an aluminum oxide sintered body, and the semiconductor element is housed in the center of its upper surface. And a wiring conductor made of a refractory metal powder such as tungsten or molybdenum, which is led out from the periphery of the recess of the insulating base to the lower surface, and a semiconductor element is formed on the bottom of the recess of the insulating base. The electrodes are bonded and fixed via an adhesive such as glass, resin, or a brazing material, and each electrode of the semiconductor element is electrically connected to a wiring conductor through an electrical connecting means such as a bonding wire. A sealing member made of glass, resin, brazing material, etc. is formed on the upper surface of the insulating base by covering the concave portion of the insulating base with a lid made of metal or ceramics. Through by joining a semiconductor device as a product by housing airtightly semiconductor element in the recess of the insulating substrate.

This conventional wiring board is generally manufactured by a ceramic green sheet laminating method,
Specifically, aluminum oxide, silicon oxide, magnesium oxide, calcium oxide, and other ceramic raw material powders are mixed with an appropriate organic binder, solvent, etc. to form a slurry, and this is adopted by the conventionally known doctor blade method.
A plurality of ceramic green sheets are obtained by forming a sheet, and thereafter, the ceramic green sheets are appropriately punched and a metal paste to be a wiring conductor is printed and applied in a predetermined pattern, and finally the ceramic green sheets are formed. Are laminated in a predetermined order to form a green ceramic compact, and the green ceramic compact is fired in a reducing atmosphere at a high temperature of about 1600 ° C.

However, in this conventional wiring board, since the ceramics such as the aluminum oxide sintered body forming the insulating substrate has a hard and brittle property, the wiring boards may not be connected to each other in a carrying process or an automatic line for manufacturing a semiconductor device. Or, if the wiring board and a part of the automatic production line for semiconductor devices collide violently, the insulating substrate may be chipped, cracked, or cracked. As a result, the semiconductor element cannot be hermetically housed and the semiconductor element is long. It has a drawback that it cannot operate normally and stably over a period of time.

According to the method of manufacturing the wiring board,
When firing the green ceramic compact, uneven firing shrinkage occurs in the raw ceramic compact, resulting in deformation such as warpage and dimensional variation in the obtained wiring board, and each electrode of the semiconductor element is used as a predetermined wiring conductor. Alternatively, there is a drawback that the wiring conductor cannot be electrically connected to a predetermined external electric circuit accurately and surely.

Therefore, the insulating substrate of the wiring board is replaced with the conventional ceramics and the inorganic insulating powder is bonded with the thermosetting resin, and the wiring conductor is replaced with the conventional refractory metal powder, and the metal powder is thermoset. A wiring board made of resin is proposed. A wiring board composed of an insulating substrate formed by bonding the inorganic insulating powder with a thermosetting resin and a wiring conductor formed by bonding a metal powder with the thermosetting resin is composed of the thermosetting resin and the inorganic insulating powder. A semi-cured precursor sheet prepared by mixing is prepared, and the precursor sheet is subjected to an appropriate punching process, and then a metal paste formed by mixing a thermosetting resin and metal powder is formed into a predetermined pattern. If necessary, a precursor sheet on which the above-mentioned metal paste is printed and applied is laminated by printing and applied, and this is applied to about 100
It is manufactured by heat curing at a temperature of ~ 300 ° C.

[0007]

However, a wiring board comprising an insulating substrate formed by bonding the inorganic insulating powder with a thermosetting resin and a wiring conductor formed by bonding a metal powder with the thermosetting resin is The bonding strength of the wiring conductor to the insulating base is slightly weak, and when a large external force is applied to the wiring conductor when connecting the electrodes of the semiconductor element to the wiring conductor, the wiring conductor is separated from the insulating base by the external force, and the semiconductor element, etc. There was a problem to be solved that the reliability of the electrical connection between the electrode and the wiring conductor was slightly inferior.

The present invention has been devised in view of the above-mentioned drawbacks, and an object thereof is to strengthen the connection between the insulating substrate and the wiring conductor and to firmly electrically connect the electrode of the semiconductor element and the like to the wiring conductor. To provide a wiring board.

[0009]

SUMMARY OF THE INVENTION The present invention, Ri consists of 60 wt% to 95 wt% of the inorganic insulator powder and 5 wt% to 40 wt% of a thermosetting resin, wherein the inorganic insulator powder Semi-hardened precursor sheet made by bonding with thermosetting resin
And the inorganic insulating powder is converted into the thermosetting resin.
Previous plurality of insulating substrates comprising insulating substrate laminated bound Ri
Heat-cured on the insulating substrate together with the semi-cured precursor sheet.
It was of the metal powder to a wiring substrate formed by depositing the wiring conductor joined by a thermosetting resin, is deposited between and wiring conductors and said insulating base plate <br/> the wiring conductor Said
Between the insulating substrate and the edge board is laminated thereto, with the interposition of forming Ru intermediate layer of a thermosetting resin, each of the thermal curing of a thermosetting resin insulating board and the wiring conductors of the intermediate layer It is characterized in that it is bonded to the organic resin by a crosslinking reaction.

[0010] method of manufacturing a wiring board of the present invention, Ru formed by mixing a thermosetting resin precursor and the inorganic insulating powder, hard
Of preparing a precursor sheet to be an insulating substrate after conversion ,
A step of semi-curing the precursor sheet ; a step of applying a resin paste made of a thermosetting resin precursor on one surface of the semi-cured precursor sheet; and a step of applying the resin paste on the applied resin paste. to a mixture of the metal powder thermosetting resin precursor Ru formed <br/>, the steps of applying a metal paste to a predetermined pattern comprising a wiring conductor after curing, the precursor sheet, the resin paste and the metal paste heat treatment while applying a pressure, a step of thermally curing while causing a crosslinking reaction between the tree <br/> thermosetting resin of thermosetting resin of fat paste precursor sheet and metal paste, from It is characterized by being formed.

According to the wiring board of the present invention, since the insulating substrate is formed by bonding the inorganic insulating powder with the thermosetting resin having excellent toughness, the wiring boards are connected to each other or between the wiring boards and the semiconductor device manufacturing line. Even if a part of the insulating base material violently collides with the insulating base material, the insulating base material will not be chipped, cracked, or cracked.

[0012] According to the wiring board of the present invention, an insulating substrate on which is deposited between and wiring conductors of the wiring conductor and the insulating board <br/>
The crosslinking reaction of a thermosetting resin of the intermediate layer in each of the thermosetting resin of the insulating board and the wiring conductors together is interposed an intermediate layer made of a thermosetting resin between the insulating substrate laminated thereto and bonding strength of the wiring conductor for insulating board since it was bonded becomes extremely strong, so that even the wiring conductor large external force is applied to the wiring conductor in such when connecting electrodes of the semiconductor element to the wiring conductor insulation not be separated from the base plate, ensuring an electrode of a semiconductor element or the like on the wiring conductors, it is possible to firmly electrically connected.

Furthermore the wiring board of the present invention, Ru formed by mixing a thermosetting resin precursor and the inorganic insulating powder, the insulating after curing
Preparing a precursor sheet comprising a substrate, said precursor sheet
Of semi-curing the resin, a step of applying a resin paste made of a thermosetting resin precursor to one surface of the semi-cured precursor sheet, and a thermosetting resin precursor on the applied resin paste. mixing a metal powder and Ru formed after curing
In a step of applying a metal paste to a predetermined pattern comprising a wiring conductor, the precursor sheet, a heat treatment while applying a pressure to the resin paste and the metal paste, the precursor sheet and the metal and thermosetting resin tree butter paste The thermosetting resin precursor of the paste, the resin paste, and the metal paste hardly shrinks during thermosetting because it is produced by a step of thermosetting while causing a crosslinking reaction with the thermosetting resin of the paste. No deformation or dimensional variation due to uneven shrinkage occurs.

[0014]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, the present invention will be described in detail with reference to the accompanying drawings. 1 and 2 show an embodiment of the application of the wiring board to the semiconductor device housing package for housing a semiconductor device of the present invention, 1 denotes an insulating substrate, 2 denotes a wiring conductor.

The insulating substrate 1 is composed of three insulating substrates 1a and 1a.
It is formed by stacking b and 1c, and has a recess 1d for accommodating a semiconductor element in the center of the upper surface thereof, and the semiconductor element 3 is provided on the bottom surface of the recess 1d via an adhesive such as resin. Adhesively fixed.

The three insulating substrates 1a, 1b and 1c constituting the insulating base 1 are, for example, silicon oxide, aluminum oxide, aluminum nitride, silicon carbide, barium titanate,
It is formed by bonding inorganic insulating powder such as zeolite with a thermosetting resin such as epoxy resin or polyimide resin, and three insulating substrates 1 constituting the insulating substrate 1 are formed.
Since each of a, 1b, and 1c is formed by joining the inorganic insulating powder with a thermosetting resin having excellent toughness, even if an external force is applied to the insulating base 1, the insulating base 1 is applied to the insulating base 1 by the external force. No chipping, cracking, or cracking occurs.

In addition, three insulating substrates 1 constituting an insulating substrate 1 formed by bonding the inorganic insulating powders with a thermosetting resin.
a, 1b, and 1c have an inorganic insulating powder content of 60% by weight.
When it is less than the above, the coefficient of thermal expansion of the insulating substrate 1 greatly differs from the coefficient of thermal expansion of the semiconductor element 3, the semiconductor element 3 emits heat during operation, and the heat is applied to both the semiconductor element 3 and the insulating substrate 1. Then, a large thermal stress is generated between them due to the difference in thermal expansion coefficient, and the large thermal stress causes the semiconductor element 3 to be separated from the insulating substrate 1, or the semiconductor element 3 to be cracked or chipped. I will end up. On the other hand, if it exceeds 95% by weight, the inorganic insulating powder cannot be completely bonded with the thermosetting resin, and the predetermined insulating substrates 1a, 1b, 1c cannot be obtained. Therefore, the insulating substrates 1a, 1b, 1c constituting the insulating base 1 are specified such that the amount of the inorganic insulating powder contained therein is in the range of 60% by weight to 95% by weight.

A wiring conductor 2 is formed from the periphery of the concave portion 1d to the lower surface of the insulating base 1 by binding a metal powder such as copper, silver or gold with a thermosetting resin such as an epoxy resin.

The wiring conductor 2 serves to electrically connect the semiconductor element 3 housed therein to an external electric circuit,
The electrodes of the semiconductor element 3 are electrically connected to the peripheral portion of the recess 1d through the bonding wires 4, and the portion leading to the lower surface of the insulating substrate 1 is electrically connected to the external electric circuit board.

When the amount of the metal powder contained in the wiring conductor 2 is less than 70% by weight, the conductivity of the wiring conductor 2 tends to deteriorate, and when it exceeds 95% by weight, the metal powder is made of a thermosetting resin. A strong bond tends to be difficult. Therefore, the wiring conductor 2 formed by binding the metal powder with a thermosetting resin has a metal powder content of 70 to 9 wt%.
It is preferable to set it in the range of 5% by weight.

Further, the wiring conductor 2 is formed by depositing a metal having excellent corrosion resistance such as nickel or gold on the exposed surface by a plating method to a thickness of 1 μm to 20 μm. The oxidative corrosion of 2 can be effectively prevented, and the wiring conductor 2 and the bonding wire 4 can be firmly electrically connected. Therefore, the wiring conductor 2 is formed on the exposed surface by plating with a metal such as nickel or gold having excellent corrosion resistance and good conductivity.
It is preferable that the film is deposited to a thickness of μm to 20 μm.

The wiring conductor 2 has a bump electrode 2a electrically connected to an external electric circuit formed on the lower surface of the insulating substrate 1. The bump electrode 2a is connected to the wiring of the external electric circuit board. By joining the conductor to the conductor via a conductive adhesive such as solder, the semiconductor element 3 housed inside is electrically connected to an external electric circuit.

Further, as shown in FIG. 2, an intermediate layer 5 is interposed between the wiring conductor 2 and the upper surface of the insulating substrate 1b constituting the insulating substrate 1, and the intermediate layer 5 allows the wiring conductor 2 to be formed.
When the wiring conductor 2 is connected to the electrode of the semiconductor element 3 via the bonding wire 4 even when a large external force is applied to the wiring conductor 2, the wiring conductor 2 is firmly joined to the insulating substrate 1b by the external force. 2 does not peel off from the insulating base 1 (the upper surface of the insulating substrate 1b), whereby each electrode of the semiconductor element 3 can be reliably and firmly electrically connected to the wiring conductor 2.

The intermediate layer 5 is made of a thermosetting resin such as a bismaleimide-triazine resin, an epoxy resin or a polyimide resin. The thermosetting resin of the insulating substrate 1b and the wiring conductor 2 are used.
When the thermosetting resin of the intermediate layer 5 is a bismaleimide-triazine resin and the thermosetting resin of the insulating substrate 1b and the wiring conductor 2 is an epoxy resin, the intermediate layer 5 The tertiary amine present in the cyanate group, which is the main component of the bismaleimide-triazine resin, acts as a ring-opening polymerization of the epoxy groups of the epoxy resin of the insulating substrate 1b and the wiring conductor 2 to cause a crosslinking reaction, or the bismaleimide. A cross-linking reaction occurs between -C = O present in the resin and the oxy group, whereby the wiring conductor 2 is firmly bonded to the insulating substrate 1b.

The thickness of the intermediate layer 5 is 10 μm.
If the thickness is less than this, it becomes difficult to firmly bond the wiring conductor 2 onto the insulating substrate 1b, and if it exceeds 70 μm, the intermediate layer 5 is formed.
There is a risk that peeling may occur between the wiring conductor 2 and the insulating substrate 1b due to thermal stress due to the difference in thermal expansion coefficient. Therefore, the thickness of the intermediate layer 5 is preferably set in the range of 10 μm to 70 μm.

The intermediate layer 5 has silicon oxide, aluminum oxide, aluminum nitride, silicon carbide,
Fillers such as barium titanate, strontium titanate, and titanium oxide may be included. However, if the content exceeds 50% by weight, the cross-linking reactivity with the thermosetting resin in the wiring conductor 2 and the thermosetting resin in the insulating substrate 1b deteriorates, so it should be 50% by weight or less. preferable.

Thus, according to the above-mentioned wiring board, the semiconductor element 3 is adhered and fixed to the bottom surface of the recess 1d of the insulating substrate 1 with an adhesive, and each electrode of the semiconductor element 3 is electrically connected to the wiring conductor 2 via the bonding wire 4. Electrically, and thereafter, the lid 6 is bonded to the upper surface of the insulating base 1 through a sealant, and the semiconductor element 3 is hermetically housed in the container including the insulating base 11 and the lid 6. The product becomes a semiconductor device.

Next, a method of manufacturing the wiring board used for the semiconductor element housing package will be described with reference to FIG. First, as shown in FIG. 3A, three precursor sheets 11a, 11b and 11c are prepared.

The three precursor sheets 11a, 11b,
11c is an inorganic insulating powder such as silicon oxide, aluminum oxide, aluminum nitride, silicon carbide, barium titanate, strontium titanate, or titanium oxide, which is an epoxy resin,
It is formed by bonding with a thermosetting resin precursor such as a polyimide resin or a polyphenylene ether resin. For example, a bisphenol A type epoxy resin, a novolac type epoxy resin, a silicon oxide powder having a particle size of 0.1 to 100 μm, Epoxy resin such as glycidyl ester type epoxy resin, and amine type curing agent, imidazole type curing agent, curing agent such as acid anhydride type curing agent are added and mixed to form a paste, and then this paste is formed into a sheet. It is manufactured by heating at a temperature of about 25 to 100 ° C. for 1 to 60 minutes and half-curing.

Next, as shown in FIG. 3B, a resin paste film 15 as an intermediate layer is formed on the upper surface of the precursor sheet 11b.
To form.

The resin paste film 15 is an epoxy resin,
It is made of a thermosetting resin precursor such as a polyimide resin or a polyphenylene ether resin, and is formed on the upper surface of the precursor sheet 11b by depositing it on the upper surface of the precursor sheet 11b to a thickness of 10 μm to 70 μm.

Precursor sheet 1 of the resin paste film 15
1b is formed on the upper surface by applying a resin paste made of a thermosetting resin precursor on the upper surface of the precursor sheet 11b and heat-treating the resin paste at a temperature of about 25 to 100 ° C. for 1 to 60 minutes. It is performed by semi-curing a curable resin.

Next, as shown in FIG. 3 (c), two precursor sheets 11a, 11b, and 11c among the three precursor sheets 11a, 11b, and 11c are provided with recesses 1d for accommodating the semiconductor element 3 therein. A and A ′ are two precursor sheets 11
a through hole B for routing the wiring conductor 2 to b and 11c,
Form each B '.

The openings A, A'and the through holes B, B'are formed by subjecting the precursor sheets 11a, 11b, 11c to a well-known punching process to obtain precursor sheets 11a, 11b, 11 '.
It is formed by drilling a hole of a predetermined shape in each of c.

Next, as shown in FIG. 3 (d), a metal paste 12 to be the wiring conductor 2 is formed on the upper and lower surfaces of the precursor sheets 11b and 11c and in the through holes B and B'by a conventionally known screen printing method. While printing and applying in a predetermined pattern, this is heated at a temperature of about 25 to 100 ° C. for 1 to 60 minutes,
Semi-cure.

As the metal paste 12, for example,
Epoxy resin such as bisphenol A type epoxy resin, novolac type epoxy resin, glycidyl ester type epoxy resin, etc. in powder of copper or the like having a particle size of about 0.1 to 20 μm, and amine type curing agent, imidazole type curing agent, acid anhydride A paste in which a curing agent such as a system curing agent is added and mixed is used.

Finally, the three precursor sheets 11
a, 11b, 11c are vertically stacked, and approximately 80 to 3 while being pressed with a constant pressure (5 to 50 Kgf / cm ² ) from above and below.
A temperature of 00 ° C. is applied for 10 seconds to 24 hours to cause a cross-linking reaction between the thermosetting resin of the resin paste film 15, the thermosetting resin of the precursor sheet 11b and the thermosetting resin of the metal paste 12 and the precursor. Body sheets 11a, 11
By completely thermosetting b, 11c, the resin paste film 15, and the metal paste 12 printed and applied in a predetermined pattern, a wiring board in which the wiring conductor 2 is adhered to the insulating substrate 1 as shown in FIG. 1 is completed. . In this case, the precursor sheets 11a, 11b, 11c, the resin paste film 15 and the metal paste 12 are hardly contracted at the time of thermosetting, so that the obtained wiring board is not deformed or the dimensions are not varied. As a result, it becomes possible to accurately connect the semiconductor element and the wiring conductor.

Further, the three precursor sheets 11a, 11
Pressing b and 11c at 5 to 50 Kgf / cm ² from above and below accelerates the crosslinking reaction between the thermosetting resin of the resin paste film 15 and the metal paste 12 and the thermosetting resin of the precursor sheet 11b, and This is for the purpose of enhancing the adhesiveness, and if the pressing force is less than 5 Kgf / cm ² , the object is not sufficiently achieved, and if it exceeds 50 Kgf / cm ² , the obtained insulating substrate is largely deformed and the dimensional accuracy is lowered. It is preferably set in the range of ˜50 Kgf / cm ² .

The present invention is not limited to the above-mentioned embodiments, and various modifications can be made without departing from the gist of the present invention. For example, in the above-mentioned embodiments, the wiring of the present invention is used. The case where the substrate is applied to a semiconductor element housing package that houses a semiconductor element has been described as an example.
This can of course be also applied as a wiring substrate used in the mixed forming an integrated circuit.

Further, in the above-mentioned embodiment, the wiring board is manufactured by stacking three precursor sheets, but it may be formed by stacking one, two, or four or more insulating boards. Good.

[0041]

According to the wiring board of the present invention, since the insulating substrate is formed by bonding the inorganic insulating powder with the thermosetting resin having excellent toughness, the wiring boards are manufactured together or the wiring board and the semiconductor device are manufactured. Even if a part of the line violently collides, the insulating substrate will not be chipped, cracked, or cracked.

[0042] According to the wiring board of the present invention, the absolute of depositing and between the wiring conductors of the wiring conductor and the insulating board <br/>
Thermosetting resin insulating board of the intermediate layer together when the intermediate layer is interposed made of a thermosetting resin and each of the thermosetting wiring conductors between the insulating substrate and the edge board is laminated thereto bonding strength of the wiring conductor pairs <br/> the insulating board since it was joined by a cross-linking reaction in the resin becomes extremely strong, so that the wiring conductor in such when connecting electrodes of the semiconductor element to the wiring conductor not a large external force is also wiring conductor is applied is peeled from the insulating base plate, ensuring an electrode of a semiconductor element or the like on the wiring conductors, it is possible to firmly electrically connected.

[0043] Further a wiring board of the present invention, Ru formed by mixing a thermosetting resin precursor and the inorganic insulating powder, the insulating after curing
Preparing a precursor sheet comprising a substrate, said precursor sheet
Of semi-curing the resin, a step of applying a resin paste made of a thermosetting resin precursor to one surface of the semi-cured precursor sheet, and a thermosetting resin precursor on the applied resin paste. mixing a metal powder and Ru formed after curing
In a step of applying a metal paste to a predetermined pattern comprising a wiring conductor, the precursor sheet, a heat treatment while applying a pressure to the resin paste and the metal paste, the precursor sheet and the metal and thermosetting resin tree butter paste The thermosetting resin precursor of the paste, the resin paste, and the metal paste hardly shrinks during thermosetting because it is produced by a step of thermosetting while causing a crosslinking reaction with the thermosetting resin of the paste. No deformation or dimensional variation due to uneven shrinkage occurs.

[Brief description of drawings]

FIG. 1 is a cross-sectional view showing an embodiment in which a wiring board of the present invention is applied to a semiconductor element housing package.

FIG. 2 is an enlarged cross-sectional view of a main part of the wiring board shown in FIG.

3 (a) to 3 (d) are cross-sectional views for each step for explaining the method for manufacturing a wiring board of the present invention.

[Explanation of symbols]

1 ... Insulating substrate 1a, 1b, 1c ... Insulating substrate 2 ... Wiring conductor 5: Middle layer 11a, 11b, 11c ... Precursor sheet 12: Metal paste 15: Resin paste film

─────────────────────────────────────────────────── ─── Continuation of front page (51) Int.Cl. ⁷ Identification code FI H05K 3/46 H05K 3/46 T H01L 23/12 N 23/14 R (56) Reference JP-A-8-125291 (JP, A) JP-A-8-288596 (JP, A) JP-A-3-215994 (JP, A) JP-A-6-232548 (JP, A) JP-A-62-123792 (JP, A) JP-A-10 −150123 (JP, A) (58) Fields investigated (Int.Cl. ⁷ , DB name) H05K 1/02 H05K 1/03 H05K 1/09 H05K 3/12 H05K 3/46 H01L 23/12-23 / 15 H01B 1/00-1/24

Claims (3)

(57) [Claims] 1. 60% by weight to 95% by weight of inorganic insulating powder
From powder and 5% to 40% by weight of thermosetting resinSuccess
Bond the inorganic insulating powder with the thermosetting resin.
ShiThe semi-cured precursor sheet consisting of
A plurality of powders bonded by the thermosetting resinInsulation board
StackingInsulating base consistingOf the insulating substrateToBefore semi-curing
Heat cured together with the precursor sheet,Thermosetting metal powder
Wiring formed by depositing wiring conductors bonded with a chemical resin
A substrate, the insulating substrateBoardBetween the wiring conductor andAnd the
The insulating substrate on which the wiring conductor is adhered and laminated on the insulating substrate
Between the insulating substrateFrom thermosetting resinSuccessThe middle layer
In addition to interposing, the thermosetting resin of the intermediate layer is used as an insulating group.
BoardAnd the cross-linking reaction of each thermosetting resin of the wiring conductor
A wiring board characterized by being bonded. 2. The intermediate layer has a thickness of 10 μm to 70 μm.
The wiring board according to claim 1, wherein Wherein Ru formed by mixing a thermosetting resin precursor and the inorganic insulator powder, a step of preparing a precursor sheet comprising an insulating substrate after curing, step of semi-curing the precursor sheet
And a step of applying a resin paste comprising a thermosetting resin precursor on one surface of the semi-cured precursor sheet, and mixing the thermosetting resin precursor and metal powder on the applied resin paste. forming Ru Te, the steps of applying a metal paste to a predetermined pattern comprising a wiring conductor after curing, the precursor sheet, a heat treatment while applying a pressure to the resin paste and the metal paste, the thermosetting resin tree butter paste while causing a crosslinking reaction between the thermosetting resin of the precursor sheet and metal paste and a step of thermally curing, in that it consists of
A method for manufacturing a characteristic wiring board.