JP3708203B2 - Electrode plate for plasma etching - Google Patents
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Description
【0001】
【発明が属する技術分野】
本発明は、半導体デバイスの製造工程において、ウエハ面のシリコン酸化膜をプラズマエッチング加工する際に用いられるガラス状炭素材で構成されたプラズマエッチング用電極板に関する。
【0002】
プラズマエッチング加工は、一対の並行平面電極を設置したエッチング装置内に反応性ガス(CF4,Ar,O2等) を導入しながら電極間に高周波電力を印加して放電させ、生じたガスプラズマを用いてフォトレジストされていない部分をエッチングすることにより高精度で微細な回路パターンを形成する工程である。このプラズマエッチング加工に用いられる平面電極には、優れた導電性の他、ウエハを汚染しない高純度性及び容易にエッチングされない化学的安定性が必要とされており、現状ではこれらの材質要件を満たすものとしてガラス状炭素材で形成された電極板が有用されている。
【0003】
ガラス状炭素材は、熱硬化性樹脂を炭化して得られる巨視的に無孔組織の硬質炭素物質で、高強度、低化学反応性、ガス不透過性、自己潤滑性、堅牢性などに優れ、不純物が少ない等の特性を有しているが、特にプラズマエッチング処理中にウエハーを汚損する原因となる微細パーティクルが組織から離脱し難い利点がある。しかしながら、近時、半導体集積度の増加がますます進行するに伴ってプラズマエッチング用の電極材にも厳しい材質要求が課せられており、ウエハー面に付着するパーティクルレベルや消耗度合の低減化が厳しく要求されている。このため、プラズマエッチング用のガラス状炭素電極を対象とする材質的改良の提案が数多くなされている。
【0004】
【従来の技術】
例えば、純度、気孔率、気孔径、結晶構造などの性状を改良対象とするものとして、気孔率が0.0002〜0.0020%で結晶子がX線回析で検出されず、かつ不純物含有量が5ppm 以下のガラス状カーボン材料からなるプラズマ装置用カーボン部材(特開平3−33007 号公報)、最大気孔径1μm 以下、平均気孔径0.7μm 以下で気孔率が1%以下の組織特性を有する高純度ガラス状カーボンからなるプラズマエッチング用電極板(特開平3−119723号公報)、高純度のガラス状カーボンからなる厚さ2mm以上の板状体であり、表面および内部組織に粒界が実質的に存在せず、最大気孔径が1μm 以下のプラズマエッチング用電極板(特開平3−285086号公報)、純度特性が総灰分5ppm 以下、金属不純物2ppm 以下、総硫黄分30ppm 以下で、結晶特性が結晶面間隔(002) 0.375nm以下、結晶子(002) の大きさが1.3nm以上で、かつ材質特性が比重1.50以上、曲げ強度が1100kg/cm2以上のガラス状カーボンからなるプラズマエッチング用電極板(特開平5−320955号公報)、格子定数C0 が6.990オングストローム以下の結晶を有するガラス状炭素からなるプラズマエッチング用電極板(特開平6−128761号公報)等が提案されている。
【0005】
このほか、表面性状を対象とするものとして、プラズマにより消耗する部位の表面平滑度がRmax 6μm 以下であるガラス状炭素からなるプラズマエッチング用電極板(特開平6−128762号公報)が、またガラス状炭素の原料系を特定する技術としてはフェノール樹脂およびポリカルボジイミド樹脂を原料として製造したガラス状炭素材からなるプラズマエッチング用電極板(特開平5−347276号公報)や、ポリカルボジイミド樹脂を原料として製造したガラス状炭素材からなるプラズマエッチング用電極板(特開平5−347278号公報)等が提案されている。
【0006】
本出願人は、プラズマエッチング用電極板を構成するガラス状炭素の組織性状とエッチング処理時の電極消耗度合との関係について検討を加えた結果、電極板を構成するガラス状炭素の表面性状が一定波長域のアルゴンイオンレーザーによるラマンスペクトル分析において特定された2つのラマンバンドのスペクトル相対強度が一定の範囲にある場合には電極消耗度合が効果的に減少する事実を解明し、先に波長5145オングストロームのアルゴンイオンレーザー光を用いたラマンスペクトルにおいて、〔R=IA/IB〕式(但し、IAは1360±10cm-1バンド域のスペクトル強度、IBは1580±10-1バンド域のスペクトル強度を示す)により定義されるR値が1.0〜2.0の範囲にあり、かつIAの半値幅が30〜90cm-1でIBの半値幅が40〜100cm-1の各範囲にある性状を備えるガラス状炭素からなるプラズマエッチング用電極板を提案した(特願平6−279984号)。
【0007】
【発明が解決しようとする課題】
ラマンスペクトル分析における前記の相対強度比Rは炭素の結晶構造により微妙に変化するが、特願平6−279984号の発明で特定した性状範囲にあるガラス状炭素は、純度、結晶性、気孔性状および表面状態の全てにおいてプラズマエッチング用電極板とした際に耐エッチング性を効果的に改善し、消耗速度を抑制する働きをする。本発明者は、この先行技術を一層改良するために引き続き研究を重ねたところ、前記のラマンスペクトル分析による相対強度比に加えてガラス状炭素のバルク結晶性状の指標となる黒鉛六角網面層の格子面間隔がエッチング消耗と密接な係わりがあり、これら両者の特性が一定の関係を満たす場合に電極消耗がより改善されることを知見した。
【0008】
本発明は、かかる知見に基づいて開発されたもので、その目的とする解決課題は、電極消耗度合が少なく、微細パーティクルの発生を伴うことなく常に安定したエッチング処理操作が保証されるガラス状炭素製のプラズマエッチング用電極板を提供することにある。
【0009】
【課題を解決するための手段】
上記の課題を解決するための本発明によるプラズマエッチング用電極板は、波長5145オングストロームのアルゴンイオンレーザー光を用いたラマンスペクトル分析において1360±100cm-1のバンド域に現出するスペクトル強度(IA)と1580±100cm-1のバンド域に現出するスペクトル強度(IB)の相対強度比R(IA/IB) と、黒鉛六角網面層の平均格子面間隔d002 (単位;オングストローム)とが、下記(1) 式の関係を満たすガラス状炭素材からなることを構成上の特徴とする。
R≧ (d002 −3.344)/0.135 …(1)
【0010】
【発明の実施の形態】
本発明のプラズマエッチング用電極板は、熱硬化性樹脂を焼成炭化して得られる均一組織を有するガラス状炭素からなることを前提とするが、純度特性として総灰分5ppm 以下、金属不純物2ppm 以下、総硫黄分30ppm 以下の高純度材質を有し、可及的に表面平滑度の高い平面板であることが好ましい。
【0011】
このガラス状炭素材において、波長5145オングストロームのアルゴンイオンレーザー光を用いてラマンスペクトル分析した場合、1360±100cm-1バンド域におけるスペクトル強度(IA)と1580±100cm-1バンド域におけるスペクトル強度(IB)の相対強度比(IA/IB)であるR値と、黒鉛六角網面層の平均格子面間隔d002 (単位;オングストローム)とが、R≧ (d002 −3.344)/0.135 の関係を満たすことが本発明の物性的要件となる。
【0012】
このうちラマンスペクトル分析における相対強度比Rは、1.0〜2.0の範囲にあることが好ましい。R値が、1.0未満では結晶組織がガラス状カーボン特有のアモルファスではなくなって耐エッチング消耗性が低下し、他方、R値が2.0を越えると炭素化が不足して電極板としての適格性が劣るうえ、エッチング消耗度合も大きくなる。より好ましいR値の範囲は1.2〜1.9の範囲である。
【0013】
黒鉛六角網面層の平均格子面間隔d002 はX線回析でC0(002)回析ピークから求められるが、このd002 間隔は3.40〜3.60オングストロームの範囲にあることが好ましい。平均格子面間隔d002 が3.40オングストロームを下回る結晶構造は黒鉛化が進行してガラス状炭素特有のアモルファス組織を呈さなくなるため、材質組織から微細パーティクルの離脱発生が多くなり、3.60オングストロームを上回ると炭素組織を不十分となって電極板としての耐エッチング消耗性が低下し、電極板の消耗度合も大きくなる。
【0014】
ガラス状炭素板をプラズマエッチング用電極板に用いた場合の消耗度合は、用いるガラス状炭素の純度、結晶構造、表面状態などが複雑に影響して微妙に変動する。一般に、炭素材をラマンスペクトル分析すると1360cm-1および1580cm-1のバンド域に2つのピークが現出し、これらの相対強度比は炭素の構造に含まれる結晶の欠陥量や格子の不規則性に関係することが知られている。例えば、人造黒鉛の場合は1360cm-1よりも1580cm-1バンドの強度が高いが、ガラス状炭素ではこの逆に1360cm-1バンドのピークが高くなる。しかし、ピークの分布やバンド間の相対強度はガラス状炭素の性状によっても異なり、耐エッチング性に変化が生じる。一方、ガラス状炭素のような難黒鉛化性炭素材のX線回析で得られる格子定数C0 は、黒鉛網目結晶が発達したグラファイト構造の炭素材と比較して大きくなり、同時に平均格子面間隔も黒鉛材に比べて相対的に広くなるが、この結晶構造も耐エッチング性や微細パーティクルの発生に影響を与える。
【0015】
本発明で規制したR≧(d002 −3.344 )/0.135 の関係式(1) は、プラズマエッチング用電極板を構成するガラス状炭素材の表面性状がX線回折で測定される黒鉛六角網面層の平均格子間隔d002 に対してラマンスペクトル分析における2バンドピークの相対強度比Rが一定範囲の水準以上にある非晶質の炭素結晶組織を備えることに特徴づけられ、この性状がプラズマエッチング操作時の電極消耗速度を抑制し、同時に微細なパーティクルの離脱を発生させない材質組織を形成する。したがって、R≧(d002 −3.344 )/0.135 の要件を満たすガラス状炭素材により構成したプラズマエッチング用電極板を用いると、常にエンチング歩留りの高い操業が可能となる。
【0016】
上記の性状を備えたガラス状炭素材からなる本発明のプラズマエッチング用電極板は、次のようにして製造することができる。まず、材質の高密度及び高純度化を図るため、原料として予め精製処理した残炭率が少なくとも40%以上のフェノール系、フラン系またはポリイミド系あるいはこれらをブレンドした熱硬化性樹脂を選択使用する。これら原料樹脂は、通常、粉状や液状を呈しているため、その形態に応じてモールド成形、射出成形あるいは注型成形など最適な成形手段を用いて所定の板状に成形する。成形体は、引き続き大気中で100〜180℃の温度で硬化処理を施す。焼成炭化処理は、硬化した樹脂成形体を黒鉛坩堝に詰めるか、黒鉛板で挟持した状態で、窒素、アルゴン等の不活性雰囲気に保たれた電気炉、あるいはリードハンマー炉に詰め、800〜1000℃に加熱することにより行われる。更に炭化処理した焼成体を雰囲気置換可能な真空炉に入れ、ハロゲン系の精製ガスを流しながら、2000℃まで昇温して高純度化処理を施す。
【0017】
ついで、焼成体の表面をラッピングして表面平滑度を高める。ラッピング処理は、砥粒と鋳鉄等の硬質工具(ラップ材)を用いて表面研磨することにより、ガラス状炭素材の表面層部分のみを所望の性状に構造変化させることができる。砥粒としては、例えばAl2 O3 砥粒のような金属酸化物、SiC砥粒のような炭化物、TiB2 砥粒のようなほう化物、BN4 砥粒のような窒化物のほか、ダイヤモンドのような単体の砥粒が挙げられ、この種の砥粒をラップ材とガラス状炭素材の間に入れ、ラップ材とガラス状炭素材の擦り合わせて研磨する。砥粒は順次に粒径の大きいものから小さいものへ移行して表面平滑度を高くする。このような表面研磨を行うと、砥粒とガラス状炭素材の表面には圧縮、剪断、摩擦等の機械的エネルギーが加えられ、砥粒とガラス状炭素材との間に起こる温度上昇、圧縮力の発生、歪みエネルギーの蓄積、構造欠陥の発生などの現象が複合的に作用して表面のメカノケミストリー変化が誘起される。この結果、本発明の要件を満たす表面性状のガラス状炭素材に転化させることが可能となる。
【0018】
前記の表面処理は、上述した焼成炭化処理工程と高純度化処理工程の間に行ってもよい。また、電極板に設けるガス流通用の貫通小孔は、樹脂成形段階の樹脂板に予め炭化時の寸法収縮率を見込んで穿設するか、焼成後の樹脂板に放電加工により穿設するかのいずれかの方法で行う。
【0019】
上記の工程において、精製した原料樹脂の選定、焼成炭化温度、精製処理時の温度条件、表面研磨時の条件などを適宜に制御することにより、目的とするガラス状炭素の性状を確保することができる。
【0020】
【実施例】
以下、本発明の実施例を比較例と対比して具体的に説明するが、本発明の実施態様はこれら実施例に限定されるものではない。
【0021】
実施例1
(1) プラズマエッチング用電極板の製造
減圧蒸留により精製したフェノールおよびホルマリンを常法に従って縮合し、フェノール樹脂初期縮合物を調製した。この原料樹脂液を400mm角のポリプロピレン製バットに流し込み、10Torr以下の減圧下で3時間脱泡処理を行ったのち、80℃の電気オーブンに入れ、一昼夜放置して板状に成形した。成形板をバットから取り出し、1時間当たり10℃の昇温速度で180℃まで昇温し、24時間硬化処理を行った。成形硬化した樹脂成形板を高純度黒鉛板で挟み付けた状態で電気炉にセットし、周囲を総灰分100ppm 未満の黒鉛粉で被包して2℃/hr の昇温速度で1000℃まで昇温し、焼成炭化処理を施した。
【0022】
得られた厚さ3mmの平板状ガラス状炭素板に、2mmの等間隔で直径0.5mmの貫通孔を放電加工により穿設したのち、研磨材粒度 #800で35分間、研磨材粒度 #2000で25分間の順でバフ研磨して表面の平滑処理を行った。ついで、雰囲気置換が可能な真空炉〔東海高熱(株)製、TP300 〕に移し、炉内にCl2 /He(モル比:5/95)の精製ガスを5リットル/分の供給速度で流入しながら2000℃まで昇温して高純度処理を施した。この高純度処理品について、研磨材粒度 #4000で25分間、研磨材粒度 #8000で35分間の順でバフ研磨し、仕上げ研磨を行った。
【0023】
(2) 材質特性の測定
このようにして製造したガラス状炭素材からなるプラズマエッチング用電極板につき、X線回析測定を行ってC(002) 回析パターンから平均格子面間隔d002 を測定した。さらに、電極板の表面に波長5145オングストロームのアルゴンイオンレーザー光を照射してラマンスペクトル分析を行い、1360±100cm-1と1580±100cm-1の両バンドにおける相対強度比Rを算定した。その結果、本発明の特性要件を満たすものであった。
【0024】
(3) 電極性能の評価
次に、この電極板をプラズマエッチング装置にセットし、反応ガス;トリクロロメタン、キャリアーガス;アルゴン、反応チャンバー内のガス圧;1Torr、電源周波数;13.5MHz の条件で100枚の6インチのシリコンウエハー酸化膜のプラズマエッチング処理を行った。100時間処理後の電極板の肉厚減少量(消耗量)および処理後のウエハーからの16MHzDRAM 製品歩留りを、ガラス状炭素材の性状と対比させて表1に示した。
【0025】
実施例2
実施例1の製造工程において、高純度処理時の温度を2100℃に変え、その他の条件は全て実施例1と同一にしてガラス状炭素材のプラズマエッチング用電極板を製造した。得られたガラス状炭素材は、本発明の特性要件を満たすものであった。この電極板につき実施例1と同様に電極性能を評価し、その結果を表1に併載した。
【0026】
実施例3
実施例1の製造工程において、高純度処理時の温度を2100℃に変え、製造工程において高純度処理後の表面仕上げ研磨の条件を研磨材粒度 #6000で45分間のみとして、その他の条件は全て実施例1と同一にしてガラス状炭素材のプラズマエッチング用電極板を製造した。得られたガラス状炭素材は、本発明の特性要件を満たすものであった。この電極板につき実施例1と同様に性能評価し、その結果を表1に併載した。
【0027】
実施例4
実施例1の製造工程において、高純度処理時の温度を2500℃に変え、製造工程において高純度処理後の表面仕上げ研磨の条件を、研磨材粒度 #3000で45分間のみとし、その他の条件は全て実施例1と同一条件によりガラス状炭素材のプラズマエッチング用電極板を製造した。このガラス状炭素材は、本発明の特性要件を満たすものであった。得られた電極板につき実施例1と同様に性能評価し、その結果を表1に併載した。
【0028】
実施例5
実施例1の製造工程において、高純度処理時の温度を1500℃に変え、その他の条件は全て実施例1と同一にしてガラス状炭素材のプラズマエッチング用電極板を製造した。得られたガラス状炭素材は、本発明の特性要件を満たすものであった。この電極板につき実施例1と同様に性能評価し、その結果を表1に併載した。
【0029】
実施例6
実施例1の製造工程において、高純度処理時の温度を3000℃に変え、高純度処理後の表面仕上げ研磨の条件を研磨材粒度 #3000で10分間のみとした他は全て実施例1と同一条件によりガラス状炭素材のプラズマエッチング用電極板を製造した。得られたガラス状炭素材は、本発明の特性要件を満たすものであった。この電極板につき実施例1と同様に性能評価し、その結果を表1に併載した。
【0030】
比較例1
実施例1の製造工程において、1000℃処理後の表面処理の条件に研磨材粒度 #4000で25分間、 #8000で35分間の研磨を加え、高純度処理後の仕上げ研磨をやめて、その他の条件は全て実施例1と同一にしてガラス状炭素材のプラズマエッチング用電極板を製造した。得られたガラス状炭素材は、本発明の特性要件を外れるものであった。この電極板につき実施例1と同様に性能評価し、その結果を表1に併載した。
【0031】
比較例2
実施例1の製造工程において、高純度処理時の温度を1200℃に変え、その他の条件は全て実施例1と同一にしてガラス状炭素材からなるプラズマエッチング用電極板を製造した。得られたガラス状炭素材は、本発明の特性要件を外れるものであった。この電極板につき実施例1と同様に性能評価し、その結果を表1に併載した。
【0032】
比較例3
実施例1の製造工程において、高純度処理時の温度を2500℃に変え、高純度処理後の仕上げ研磨をやめて、その他の条件は全て実施例1と同一にしてガラス状炭素材からなるプラズマエッチング用電極板を製造した。得られたガラス状炭素材は、本発明の特性要件を外れるものであった。この電極板につき実施例1と同様に性能評価し、その結果を表1に併載した。
【0033】
【表1】
【0034】
表1の結果から、本発明の特性要件を満たす実施例によるガラス状炭素材からなる電極板は比較例品に比べていずれも電極消耗量が少なく、製品歩留りも高いことが判る。しかし、ガラス状炭素材の相対強度比Rが1.0〜2.0の範囲を外れる実施例6や、平均格子面間隔d002 が3.40〜3.60オングストロームの範囲を外れる実施例5では微細パーティクルの脱落により製品歩留りが若干低下する様子が認められた。
【0035】
【発明の効果】
以上のとおり、本発明によればラマンスペクトル分析により出現する2つの特定バンド域の相対強度比とX線回析により求めた黒鉛六角網面層の平均格子面間隔d002 が特定範囲にある性状のガラス状炭素材を選択することにより、エッチング消耗が少なく、微細パーティクルの発生がない製品歩留りに優れるプラズマエッチング用電極板を提供することが可能となる。したがって、常に安定したエッチング加工が保証されるうえ、電極板の寿命を大幅に延長することができる。[0001]
[Technical field to which the invention belongs]
The present invention relates to a plasma etching electrode plate made of a glassy carbon material used when plasma etching a silicon oxide film on a wafer surface in a semiconductor device manufacturing process.
[0002]
The plasma etching process is performed by applying a high frequency power between the electrodes while introducing a reactive gas (CF 4 , Ar, O 2, etc.) into an etching apparatus provided with a pair of parallel plane electrodes, and generating a gas plasma. This is a step of forming a fine circuit pattern with high accuracy by etching a portion which is not photoresisted by using. In addition to excellent conductivity, the planar electrode used in this plasma etching process requires high purity that does not contaminate the wafer and chemical stability that is not easily etched, and currently satisfies these material requirements. As an example, an electrode plate formed of a glassy carbon material is useful.
[0003]
A glassy carbon material is a macroscopically non-porous hard carbon material obtained by carbonizing a thermosetting resin, and is excellent in high strength, low chemical reactivity, gas impermeability, self-lubricity, fastness, etc. Although it has characteristics such as few impurities, there is an advantage that fine particles that cause contamination of the wafer during the plasma etching process are difficult to separate from the structure. However, as the degree of semiconductor integration increases more and more recently, strict material requirements are imposed on electrode materials for plasma etching, and the level of particles adhering to the wafer surface and the degree of wear are severely reduced. It is requested. For this reason, many proposals have been made for material improvements aimed at glassy carbon electrodes for plasma etching.
[0004]
[Prior art]
For example, the properties such as purity, porosity, pore diameter, crystal structure, etc. are to be improved. The porosity is 0.0002 to 0.0020%, and the crystallite is not detected by X-ray diffraction and contains impurities. Carbon member for plasma device made of glassy carbon material with an amount of 5 ppm or less (Japanese Patent Laid-Open No. 3-33007), with a maximum pore size of 1 μm or less, an average pore size of 0.7 μm or less, and a porosity of 1% or less. An electrode plate for plasma etching made of high-purity glassy carbon (Japanese Patent Laid-Open No. 3-119723), a plate-like body made of high-purity glassy carbon and having a thickness of 2 mm or more, with grain boundaries on the surface and internal structure An electrode plate for plasma etching that does not substantially exist and has a maximum pore diameter of 1 μm or less (Japanese Patent Laid-Open No. 3-285086), has a purity characteristic of 5 ppm or less, a metal impurity of 2 ppm or less, and a total sulfur content of 30 ppm or less. Sex lattice spacing (002) 0.375Nm or less, the size of crystallite (002) is more than 1.3 nm, and the material properties are a specific gravity less than 1.50, bending strength 1100 kg / cm 2 or more glassy carbon Electrode plate for plasma etching made of (Japanese Patent Laid-Open No. 5-320955), Electrode plate for plasma etching made of glassy carbon having a crystal having a lattice constant C 0 of 6.990 angstroms or less (JP-A-6-128761) Etc. have been proposed.
[0005]
In addition, as an object for surface properties, a plasma etching electrode plate (Japanese Patent Laid-Open No. Hei 6-128762) made of glassy carbon having a surface smoothness Rmax of 6 μm or less at a portion consumed by plasma is also disclosed. As a technique for specifying the raw material system of glassy carbon, an electrode plate for plasma etching (JP-A-5-347276) made of a glassy carbon material produced from phenol resin and polycarbodiimide resin as a raw material, or polycarbodiimide resin as a raw material An electrode plate for plasma etching (Japanese Patent Laid-Open No. 5-347278) made of a manufactured glassy carbon material has been proposed.
[0006]
As a result of studying the relationship between the structural properties of glassy carbon constituting the electrode plate for plasma etching and the degree of electrode wear during the etching process, the present applicant has determined that the surface properties of the glassy carbon constituting the electrode plate are constant. Elucidation of the fact that the degree of electrode wear is effectively reduced when the relative spectral intensities of the two Raman bands identified in the Raman spectrum analysis by the argon ion laser in the wavelength range are within a certain range. [R = IA / IB] formula (where IA is the spectral intensity in the 1360 ± 10 cm −1 band region and IB is the spectral intensity in the 1580 ± 10 −1 band region) R value defined by) is in the range of 1.0 to 2.0, and the half width of the IA is 30~90Cm -1 FWHM of IB proposed a plasma etching electrode plate of glassy carbon having the properties in the respective ranges of 40~100cm -1 (Japanese Patent Application No. 6-279984).
[0007]
[Problems to be solved by the invention]
The relative intensity ratio R in the Raman spectrum analysis slightly changes depending on the crystal structure of the carbon, but the glassy carbon in the property range specified in the invention of Japanese Patent Application No. 6-279984 has purity, crystallinity, and porosity properties. In addition, when the electrode plate for plasma etching is used in all surface states, it effectively improves the etching resistance and functions to suppress the consumption rate. The present inventor has continued research to further improve this prior art, and in addition to the relative intensity ratio by the Raman spectrum analysis described above, the graphite hexagonal network layer, which is an indicator of the bulk crystallinity of glassy carbon, is used. It was found that the lattice spacing is closely related to the etching consumption, and the electrode consumption is further improved when the characteristics of both satisfy a certain relationship.
[0008]
The present invention was developed on the basis of such knowledge, and the objective solution is a glassy carbon in which the degree of electrode wear is small and a stable etching process operation is always guaranteed without generation of fine particles. An object of the present invention is to provide a plasma etching electrode plate.
[0009]
[Means for Solving the Problems]
The electrode plate for plasma etching according to the present invention for solving the above-described problems is a spectral intensity (IA) that appears in a band region of 1360 ± 100 cm −1 in Raman spectrum analysis using an argon ion laser beam having a wavelength of 5145 angstroms. And the relative intensity ratio R (IA / IB) of the spectral intensity (IB) appearing in the band range of 1580 ± 100 cm −1 and the average lattice spacing d 002 (unit: angstrom) of the graphite hexagonal mesh layer, It is characterized by being composed of a glassy carbon material that satisfies the relationship of the following formula (1).
R ≧ (d 002 −3.344) /0.135 (1)
[0010]
DETAILED DESCRIPTION OF THE INVENTION
The electrode plate for plasma etching according to the present invention is premised on glassy carbon having a uniform structure obtained by firing and carbonizing a thermosetting resin, but the purity characteristics are 5 ppm or less in total ash, 2 ppm or less in metal impurities, A flat plate having a high-purity material having a total sulfur content of 30 ppm or less and a surface smoothness as high as possible is preferable.
[0011]
In the glass-like carbon material, when the Raman spectroscopy using an argon ion laser beam having a wavelength of 5145 Angstroms, the spectral intensity in the spectrum strength (IA) 1580 ± 100cm -1 band region in 1360 ± 100 cm -1 band region (IB R value, which is the relative intensity ratio (IA / IB), and the average lattice spacing d 002 (unit: angstrom) of the graphite hexagonal network layer satisfies the relationship R ≧ (d 002 −3.344) /0.135 This is a physical requirement of the present invention.
[0012]
Among these, the relative intensity ratio R in the Raman spectrum analysis is preferably in the range of 1.0 to 2.0. When the R value is less than 1.0, the crystal structure is not amorphous characteristic of glassy carbon and the etching wear resistance is reduced. On the other hand, when the R value exceeds 2.0, carbonization is insufficient and the electrode plate is used as an electrode plate. Qualification is inferior, and the degree of etching consumption increases. A more preferable range of the R value is in the range of 1.2 to 1.9.
[0013]
The average lattice spacing d 002 of the graphite hexagonal mesh layer is determined from the C 0 (002) diffraction peak by X-ray diffraction, and this d 002 spacing may be in the range of 3.40 to 3.60 Å. preferable. A crystal structure having an average lattice spacing d 002 less than 3.40 angstroms does not exhibit an amorphous structure peculiar to glassy carbon due to the progress of graphitization. If it exceeds 1, the carbon structure becomes insufficient, the etching wear resistance as the electrode plate is lowered, and the degree of wear of the electrode plate is also increased.
[0014]
The degree of wear when a glassy carbon plate is used as an electrode plate for plasma etching varies slightly due to the influence of the purity, crystal structure, surface state, etc. of the glassy carbon used. Generally, the carbon material two peaks out current in the band region of 1360 cm -1 and 1580 cm -1 when a Raman spectrum analysis, their relative intensity ratio to irregularities of defects and lattice of crystals contained in the structure of the carbon It is known to be involved. For example, in the case of artificial graphite, but the intensity of the 1580 cm -1 band is higher than 1360 cm -1, a peak of 1360 cm -1 band in the reverse increases the glassy carbon. However, the distribution of peaks and the relative strength between bands vary depending on the properties of glassy carbon, and the etching resistance changes. On the other hand, the lattice constant C 0 obtained by X-ray diffraction of a non-graphitizable carbon material such as glassy carbon is larger than that of a carbon material having a graphite structure in which a graphite network crystal is developed, and at the same time the average lattice plane Although the interval is relatively wider than that of the graphite material, this crystal structure also affects the etching resistance and the generation of fine particles.
[0015]
The relational expression (1) of R ≧ (d 002 −3.344) /0.135 regulated in the present invention is a graphite hexagonal network surface in which the surface property of the glassy carbon material constituting the electrode plate for plasma etching is measured by X-ray diffraction. It is characterized by having an amorphous carbon crystal structure in which the relative intensity ratio R of the two band peaks in the Raman spectrum analysis is above a certain range with respect to the average lattice spacing d 002 of the layer. It suppresses the electrode consumption rate during operation, and at the same time forms a material structure that does not cause the separation of fine particles. Therefore, when an electrode plate for plasma etching composed of a glassy carbon material that satisfies the requirement of R ≧ (d 002 −3.344) /0.135 is used, operation with a high enching yield is always possible.
[0016]
The electrode plate for plasma etching of the present invention comprising the glassy carbon material having the above properties can be produced as follows. First, in order to achieve high density and high purity of the material, a phenol-based, furan-based, polyimide-based or a thermosetting resin blended with these having a residual carbon ratio of at least 40% or more that has been refined in advance as a raw material is selectively used. . Since these raw material resins are usually in the form of powder or liquid, they are molded into a predetermined plate shape using an optimal molding means such as molding, injection molding or cast molding according to the form. The molded body is subsequently subjected to a curing treatment at a temperature of 100 to 180 ° C. in the atmosphere. The calcination carbonization treatment is performed by filling a cured resin molded body in a graphite crucible or in an electric furnace maintained in an inert atmosphere such as nitrogen or argon or a lead hammer furnace while being sandwiched between graphite plates. This is done by heating to ° C. Furthermore, the carbonized fired body is placed in a vacuum furnace capable of atmosphere substitution, and heated to 2000 ° C. while flowing a halogen-based refined gas, and subjected to a high purity treatment.
[0017]
Next, the surface smoothness is increased by wrapping the surface of the fired body. By lapping the surface using a hard tool (lap material) such as abrasive grains and cast iron, the structure of only the surface layer portion of the glassy carbon material can be changed to a desired property. As abrasive grains, for example, metal oxides such as Al 2 O 3 abrasive grains, carbides such as SiC abrasive grains, borides such as TiB 2 abrasive grains, nitrides such as BN 4 abrasive grains, diamond These abrasive grains are put between a lapping material and a glassy carbon material, and the lapping material and the glassy carbon material are rubbed together for polishing. Abrasive grains sequentially shift from a larger particle diameter to a smaller one to increase the surface smoothness. When such surface polishing is performed, mechanical energy such as compression, shearing, and friction is applied to the surfaces of the abrasive grains and the glassy carbon material, and the temperature rise and compression that occurs between the abrasive grains and the glassy carbon material. Phenomenon such as generation of force, accumulation of strain energy, and generation of structural defects act in a complex manner to induce a change in surface mechanochemistry. As a result, it can be converted into a glassy carbon material having a surface property that satisfies the requirements of the present invention.
[0018]
You may perform the said surface treatment between the baking carbonization process mentioned above and a highly purified process. Also, whether the through holes for gas flow provided in the electrode plate should be drilled in advance in the resin plate at the resin molding stage in consideration of the dimensional shrinkage during carbonization, or in the resin plate after firing by electric discharge machining. Do one of the following.
[0019]
In the above steps, the desired properties of the glassy carbon can be ensured by appropriately controlling the selection of the refined raw resin, the calcination carbonization temperature, the temperature conditions during the purification treatment, the conditions during the surface polishing, etc. it can.
[0020]
【Example】
Examples of the present invention will be specifically described below in comparison with comparative examples. However, embodiments of the present invention are not limited to these examples.
[0021]
Example 1
(1) Production of electrode plate for plasma etching Phenol and formalin purified by distillation under reduced pressure were condensed according to a conventional method to prepare an initial phenol resin condensate. The raw resin solution was poured into a 400 mm square polypropylene vat, defoamed for 3 hours under a reduced pressure of 10 Torr or less, then placed in an electric oven at 80 ° C. and allowed to stand overnight to form a plate. The molded plate was removed from the bat, heated to 180 ° C. at a rate of 10 ° C. per hour, and subjected to a curing treatment for 24 hours. The molded and hardened resin molded plate is sandwiched between high purity graphite plates and set in an electric furnace. The periphery is encapsulated with graphite powder with a total ash content of less than 100 ppm, and the temperature is raised to 1000 ° C at a rate of 2 ° C / hr. Warmed and calcined.
[0022]
The obtained flat glassy carbon plate with a thickness of 3 mm was drilled with 0.5 mm diameter through-holes at equal intervals of 2 mm, and then abrasive particle size # 800 for 35 minutes, abrasive particle size # 2000 The surface was smoothed by buffing in the order of 25 minutes. Next, the atmosphere was replaced with a vacuum furnace (TP300, manufactured by Tokai High Heat Co., Ltd.), and purified gas of Cl 2 / He (molar ratio: 5/95) was introduced into the furnace at a supply rate of 5 liters / minute. Then, the temperature was raised to 2000 ° C. and high-purity treatment was performed. This high-purity treated product was subjected to final polishing by buffing in the order of abrasive particle size # 4000 for 25 minutes and abrasive particle size # 8000 for 35 minutes in this order.
[0023]
(2) Measurement of material properties per this manner consists of glassy carbon material manufactured by a plasma etching electrode plate, measure the C (002) from the average diffraction pattern lattice spacing d 002 performs X-ray diffraction measurement did. Further, the surface of the electrode plate was irradiated with an argon ion laser beam having a wavelength of 5145 angstroms to perform Raman spectrum analysis, and the relative intensity ratio R in both bands of 1360 ± 100 cm −1 and 1580 ± 100 cm −1 was calculated. As a result, the characteristic requirements of the present invention were satisfied.
[0024]
(3) Evaluation of electrode performance Next, this electrode plate was set in a plasma etching apparatus, and the reaction gas: trichloromethane, carrier gas; argon, gas pressure in the reaction chamber; 1 Torr, power frequency: 13.5 MHz Plasma etching of 100 6-inch silicon wafer oxide films was performed. Table 1 shows the thickness reduction (consumption amount) of the electrode plate after the 100-hour treatment and the yield of the 16 MHz DRAM product from the treated wafer in comparison with the properties of the glassy carbon material.
[0025]
Example 2
In the production process of Example 1, the temperature during high-purity treatment was changed to 2100 ° C., and the other conditions were all the same as in Example 1 to produce an electrode plate for plasma etching of a glassy carbon material. The obtained glassy carbon material satisfied the characteristic requirements of the present invention. The electrode performance of this electrode plate was evaluated in the same manner as in Example 1, and the results are also shown in Table 1.
[0026]
Example 3
In the manufacturing process of Example 1, the temperature during high-purity treatment was changed to 2100 ° C., and the condition of surface finish polishing after high-purity processing in the manufacturing process was only 45 minutes with abrasive particle size # 6000, all other conditions were An electrode plate for plasma etching of a glassy carbon material was manufactured in the same manner as in Example 1. The obtained glassy carbon material satisfied the characteristic requirements of the present invention. The performance of this electrode plate was evaluated in the same manner as in Example 1, and the results are also shown in Table 1.
[0027]
Example 4
In the production process of Example 1, the temperature during high-purity treatment was changed to 2500 ° C., and the condition of surface finish polishing after high-purity treatment in the production process was 45 minutes with abrasive particle size # 3000, and the other conditions were A glassy carbon electrode plate for plasma etching was manufactured under the same conditions as in Example 1. This glassy carbon material satisfied the characteristic requirements of the present invention. The obtained electrode plate was evaluated for performance in the same manner as in Example 1, and the results are listed in Table 1.
[0028]
Example 5
In the production process of Example 1, the temperature during high-purity treatment was changed to 1500 ° C., and all other conditions were the same as in Example 1, and a glassy carbon material plasma etching electrode plate was produced. The obtained glassy carbon material satisfied the characteristic requirements of the present invention. The performance of this electrode plate was evaluated in the same manner as in Example 1, and the results are also shown in Table 1.
[0029]
Example 6
In the production process of Example 1, the temperature during high-purity treatment was changed to 3000 ° C., and the surface finish polishing conditions after high-purity treatment were the same as in Example 1 except that the abrasive grain size # 3000 was only 10 minutes. The electrode plate for plasma etching of a glassy carbon material was manufactured according to conditions. The obtained glassy carbon material satisfied the characteristic requirements of the present invention. The performance of this electrode plate was evaluated in the same manner as in Example 1, and the results are also shown in Table 1.
[0030]
Comparative Example 1
In the production process of Example 1, polishing was performed for 25 minutes at abrasive particle size # 4000 and 35 minutes at # 8000 in the surface treatment conditions after 1000 ° C. treatment, and finish polishing after high purity treatment was stopped. Were the same as in Example 1 to produce an electrode plate for glass etching of glassy carbon material. The obtained glassy carbon material deviated from the characteristic requirements of the present invention. The performance of this electrode plate was evaluated in the same manner as in Example 1, and the results are also shown in Table 1.
[0031]
Comparative Example 2
In the production process of Example 1, the temperature during high-purity treatment was changed to 1200 ° C., and all other conditions were the same as in Example 1 to produce an electrode plate for plasma etching made of a glassy carbon material. The obtained glassy carbon material deviated from the characteristic requirements of the present invention. The performance of this electrode plate was evaluated in the same manner as in Example 1, and the results are also shown in Table 1.
[0032]
Comparative Example 3
In the manufacturing process of Example 1, the temperature during the high-purity treatment was changed to 2500 ° C., the finish polishing after the high-purity treatment was stopped, and all other conditions were the same as in Example 1, and plasma etching made of a glassy carbon material An electrode plate was manufactured. The obtained glassy carbon material deviated from the characteristic requirements of the present invention. The performance of this electrode plate was evaluated in the same manner as in Example 1, and the results are listed in Table 1.
[0033]
[Table 1]
[0034]
From the results in Table 1, it can be seen that the electrode plates made of the glassy carbon material according to the example satisfying the characteristic requirements of the present invention have less electrode consumption and a higher product yield than the comparative example products. However, and glassy embodiment relative intensity ratio R is out of the range of 1.0 to 2.0 carbon material 6, exemplary average lattice spacing d 002 is out of the range of 3.40 to 3.60 Å Example 5 , It was observed that the yield of the product decreased slightly due to the dropout of fine particles.
[0035]
【The invention's effect】
As described above, the properties of average lattice spacing d 002 of the present invention in accordance if the relative intensity ratio of two specific bands zone appearing by Raman spectroscopy and X-ray diffraction by the obtained graphite hexagonal plane layer is in a specific range By selecting this glassy carbon material, it is possible to provide an electrode plate for plasma etching that is excellent in product yield with little etching consumption and no generation of fine particles. Therefore, a stable etching process is always guaranteed and the life of the electrode plate can be greatly extended.
Claims (3)
R≧ (d002 −3.344)/0.135 …(1)Spectral intensity (IA) appearing in the band region of 1360 ± 100 cm −1 and spectral intensity appearing in the band region of 1580 ± 100 cm −1 (IB) in Raman spectrum analysis using an argon ion laser beam having a wavelength of 5145 angstroms Relative strength ratio R (IA / IB) and average lattice spacing d 002 (unit: angstrom) of graphite hexagonal mesh layer are made of glassy carbon material satisfying the relationship of the following formula (1) An electrode plate for plasma etching.
R ≧ (d 002 −3.344) /0.135 (1)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP05246496A JP3708203B2 (en) | 1996-02-15 | 1996-02-15 | Electrode plate for plasma etching |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP05246496A JP3708203B2 (en) | 1996-02-15 | 1996-02-15 | Electrode plate for plasma etching |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH09221310A JPH09221310A (en) | 1997-08-26 |
| JP3708203B2 true JP3708203B2 (en) | 2005-10-19 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP05246496A Expired - Fee Related JP3708203B2 (en) | 1996-02-15 | 1996-02-15 | Electrode plate for plasma etching |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3708203B2 (en) |
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1996
- 1996-02-15 JP JP05246496A patent/JP3708203B2/en not_active Expired - Fee Related
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| JPH09221310A (en) | 1997-08-26 |
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