JP3465838B2 - Electrode plate for plasma etching - Google Patents
Electrode plate for plasma etchingInfo
- Publication number
- JP3465838B2 JP3465838B2 JP08568097A JP8568097A JP3465838B2 JP 3465838 B2 JP3465838 B2 JP 3465838B2 JP 08568097 A JP08568097 A JP 08568097A JP 8568097 A JP8568097 A JP 8568097A JP 3465838 B2 JP3465838 B2 JP 3465838B2
- Authority
- JP
- Japan
- Prior art keywords
- electrode plate
- glassy carbon
- plasma etching
- plate
- less
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Carbon And Carbon Compounds (AREA)
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
Description
【発明の詳細な説明】
【0001】
【発明の属する技術分野】本発明は、半導体デバイスの
製造工程において、ウエハ面のシリコン酸化膜をプラズ
マエッチング加工する際に用いられる板状ガラス状カー
ボン材で構成されたプラズマエッチング用電極板に関す
る。
【0002】
【従来の技術】プラズマエッチングは、上下に対向する
一対の平面電極を設置したエッチング装置内に、上部電
極からCF4 、CHF3 等のハロゲン系反応ガスを導入
しながら両電極間に高周波電力を印加して放電させ、生
じたガスプラズマを用いて下部電極上に載置されたウエ
ハのフォトレジストされていない部分をエッチングする
ことにより高精度で微細な回路パターンを形成するもの
である。このプラズマエッチング加工に用いられる平面
電極には、優れた導電性の他、ウエハを汚染しない高純
度性及び容易にエッチングされない化学的安定性が必要
とされており、現状ではこれらの材質要件を満たすもの
としてガラス状カーボン材で構成された電極板が有用さ
れている。
【0003】ガラス状カーボン材は、熱硬化性樹脂を炭
化して得られる巨視的に無孔組織の三次元網目構造を呈
する硬質炭素物質で、高強度、化学的安定性、耐磨耗
性、ガス不透過性、自己潤滑性、堅牢性などに優れ、不
純物が少ない等の特徴を有しているが、特にプラズマエ
ッチング処理中にウエハーを汚損する原因となる微細パ
ーティクルが組織から離脱し難い利点がある。しかしな
がら、近時、半導体集積度が増大するに伴ってプラズマ
エッチング用の電極材にも厳しい材質要求が課せられて
おり、ウエハー面に付着するパーティクルレベルや消耗
度合の低減化が厳しく要求されている。このため、プラ
ズマエッチング用のガラス状カーボン電極を対象とする
材質的改良の提案が数多くなされている。
【0004】例えば、純度、気孔率、気孔径、結晶構造
などの性状を改良対象とするものとして、気孔率が0.
0002〜0.0020%で結晶子がX線回析で検出さ
れず、かつ不純物含有量が5ppm 以下のガラス状カーボ
ン材料からなるプラズマ装置用カーボン部材(特開平3
−33007 号公報)、最大気孔径1μm 以下、平均気孔径
0.7μm 以下で気孔率が1%以下の組織特性を有する
高純度ガラス状カーボンからなるプラズマエッチング用
電極板(特開平3−119723号公報)、高純度ガラス状カ
ーボンからなる厚さ2mm以上の板状体であり、表面およ
び内部組織に粒界が実質的に存在せず、最大気孔径が1
μm 以下のプラズマエッチング用電極板(特開平3−28
5086号公報)、純度特性が総灰分5ppm 以下、金属不純
物2ppm以下、総硫黄分30ppm 以下で、結晶特性が結
晶面間隔d002 0.0375nm以下、結晶子の大きさが
1.3nm以上で、かつ材質特性が比重1.50以上、曲
げ強度が1100kg/cm2以上のガラス状カーボンからな
るプラズマエッチング用電極板(特開平5−320955号公
報)、格子定数C0 が6.990オングストローム以下
の結晶を有するガラス状炭素からなるプラズマエッチン
グ用電極板(特開平6−128761号公報)等が提案されて
いる。
【0005】このほか、表面性状を対象とするものとし
て、プラズマにより消耗する部位の表面平滑度がRmax
6μm 以下であるガラス状炭素からなるプラズマエッチ
ング用電極板(特開平6−128762号公報)が、またガラ
ス状炭素の原料系を特定する技術としてはフェノール樹
脂およびポリカルボジイミド樹脂を原料として製造した
ガラス状炭素材からなるプラズマエッチング用電極板
(特開平5−347276号公報)や、ポリカルボジイミド樹
脂を原料として製造したガラス状炭素材からなるプラズ
マエッチング用電極板(特開平5−347278号公報)等が
提案されている。
【0006】本出願人は、プラズマエッチング用電極板
を構成するガラス状炭素の組織性状とエッチング処理時
の電極消耗度合との関係について検討を加えた結果、電
極板を構成するガラス状炭素の表面性状が一定波長域の
アルゴンイオンレーザーによるラマンスペクトル分析に
おいて特定された2つのラマンバンドのスペクトル相対
強度が一定の範囲にある場合には電極消耗度合が効果的
に減少する事実を解明し、先に波長5145オングスト
ロームのアルゴンイオンレーザー光を用いたラマンスペ
クトルにおいて、〔R=IA/IB〕式(但し、IAは
1360±100cm-1バンド域のスペクトル強度、IB
は1580±100cm-1バンド域のスペクトル強度を示
す)により定義されるR値が1.0〜2.0の範囲にあ
り、かつIAの半値幅が30〜90cm-1でIBの半値幅
が40〜100cm-1の各範囲にある性状を備えるガラス
状炭素からなるプラズマエッチング用電極板を提案した
(特開平8−120471号公報)。
【0007】更に、本出願人は上記特開平8−1204
71号公報の技術を発展させて、プラズマエッチング時
の電極消耗速度を抑制するとともに微細なパーティクル
の離脱を生じさせない組織性状のガラス状カーボン材と
して、相対強度比R(=IA/IB)と、黒鉛六角網面
層の平均格子面間隔d002 とが、R≧(d002 −3.3
44)/0.135の関係を満たすガラス状炭素材から
なるプラズマエッチング用電極板を開発、提案した(特
願平8−52464 号)。
【0008】
【発明が解決しようとする課題】この特開平8−120
471号公報および特願平8−52464号によるプラ
ズマエッチング用電極板によれば、電極消耗やパーティ
クルの発生を効果的に低減することができ、電極性能の
向上、改善が図られる。しかしながらその後の研究によ
り、プラズマエッチングの過程において電極板の表層部
が徐々に消耗して内部組織が露出してくるに伴い、パー
ティクルの発生が増大し、消耗速度も大きくなる傾向が
認められた。この傾向は電極板が大型化して厚肉化する
につれて、より顕著になる。
【0009】本発明者は、エッチング処理時のガラス状
カーボン材の組織性状と電極板の消耗度合いとの関係に
ついて更に研究を進めた結果、板状ガラス状カーボン材
の断面組織の不均一性、特に表層部と断面中心部との組
織構造上の差が大きく影響することを確認した。
【0010】本発明は、上記の知見に基づいて完成した
ものであり、その目的とするところは、板状ガラス状カ
ーボン材からなるプラズマエッチング用電極板におい
て、表層部と内部組織の結晶構造の差を特定の範囲に設
定して組織性状の均質化を図るとともに、内部組織の結
晶構造を耐エッチング消耗性を低位に維持するために有
効な性状範囲に設定することにより、8インチを越える
大型ウエハにも充分対応可能であり長期間に亘って安定
したエッチング加工を行うことのできる板状ガラス状カ
ーボン材からなるプラズマエッチング用電極板を提供す
ることにある。
【0011】
【課題を解決するための手段】上記の目的を達成するた
めの本発明によるプラズマエッチング用電極板は、波長
5145オングストロームのアルゴンイオンレーザー光
を用いたラマンスペクトル分析において下記(1)式で
相対強度比Rを定義し、表層部と断面中心部におけるR
値の差が0.1以下であり、かつ断面中心部におけるR
値が1.2〜1.7の範囲の組織性状を備える厚さ5m
m以上の板状ガラス状カーボン材からなることを構成上
の特徴とする。
R=IA/IB …(1)
但し、IAは1360±100cm―1バンド域におけ
るスペクトル強度、IBは1580±100cm―1バ
ンド域におけるスペクトル強度を示す。
【0012】
【発明の実施の形態】本発明のプラズマエッチング用電
極板は、熱硬化性樹脂を焼成炭化して得られる均一組織
を有するガラス状カーボンからなることを前提とする
が、純度特性として総灰分5ppm 以下、金属不純物2pp
m 以下、総硫黄分30ppm 以下の高純度特性を有し、可
及的に表面平滑度の高い平面板であることが好ましい。
【0013】ガラス状炭素板をプラズマエッチング用電
極板に用いた場合の消耗度合は、用いるガラス状炭素の
純度、結晶構造、表面状態などが複雑に影響して微妙に
変動する。一般に、炭素材をラマンスペクトル分析する
と1360cm-1および1580cm-1のバンド域に2つの
ピークが現出し、これらの相対強度比は炭素の構造に含
まれる結晶の欠陥量や格子の不規則性に関係することが
知られている。例えば、人造黒鉛の場合は1360cm-1
よりも1580cm-1バンドの強度が高いが、ガラス状炭
素ではこの逆に1360cm-1バンドのピークが高くな
る。しかし、ピークの分布やバンド間の相対強度はガラ
ス状炭素の性状によっても異なり、耐エッチング性に変
化が生じる。
【0014】本発明は、ガラス状カーボン板の表層部と
断面中心部について、波長5145オングストロームの
アルゴンイオンレーザー光を用いてラマンスペクトル分
析を行い、1360±100cm-1バンド域におけるスペ
クトル強度IAと、1580±100cm-1バンド域にお
けるスペクトル強度IBとの比(IA/IB)を相対強
度比Rとして定義し、表層部と断面中心部におけるRの
値の差が0.1以下の組織性状とすることが第一の物性
的要件となる。R値の差が0.1を越えると表層部と断
面中心部との組織性状差が大きくなり、表層部の消耗に
より内部組織が出現するのに伴い消耗速度が大きくな
り、パーティクルの発生も増大する。
【0015】更に本発明は、第二の物性的要件として断
面中心部における相対強度比Rの値が1.2〜1.7の
範囲にあることが必要である。R値が1.2を下回ると
結晶組織がガラス状カーボン特有のアモルファスではな
くなって耐エッチング消耗性が低下し、またR値が1.
7を越える場合には炭素化が不足して導電性や化学的安
定性が低く電極板としての適格性が劣るうえ、エッチン
グ消耗速度も大きくなる。
【0016】なお、ラマンスペクトル分析によるスペク
トル強度の測定には、市販の顕微ラマン分析装置を好適
に用いることができる。また、本発明で測定対象とする
板状ガラス状カーボン材の表層部および断面中心部と
は、表層部はガラス状カーボン板の表面(ウエハに相対
する面)あるいは裏面近傍の、具体的には表裏面から3
0μm 以内の領域を測定対象領域とする。また、断面中
心部としてはガラス状カーボン板を切断して、その破断
面の厚さ方向の中心位置、すなわち板厚の1/2を中心
位置として、その周辺30μm 以内の領域を測定対象領
域とする。なお、板状ガラス状カーボン材の板厚は5mm
以上であることが好ましい。
【0017】上記の性状を備えた板状ガラス状カーボン
材からなる本発明のプラズマエッチング用電極板は、次
のようにして製造することができる。まず、材質の高密
度化及び高純度化を図るため、原料として予め精製処理
した残炭率が少なくとも40%以上のフェノール系、フ
ラン系またはポリイミド系あるいはこれらをブレンドし
た熱硬化性樹脂が選択使用される。例えば、原料として
予め精製処理したフェノール及びホルマリンを重縮合反
応させて得られた分子量100以上、ゲル化時間5〜6
0分のフェノール樹脂初期縮合物にフランあるいはその
誘導体化合物を混合して粘度1〜100ポイズ、樹脂分
50重量%以上の2成分系樹脂組成物を調製する。フラ
ン誘導体化合物にはフルフリルアルコール、フルフラー
ル、フランカルボン酸メチルエステルなどフェノール系
樹脂と相溶性を有するものが単独もしくは2種以上混合
して用いられる。
【0018】これらの原料樹脂は、モールド成形、注型
成形など適宜な成形法により所定の板状に成形し、次い
で樹脂成形体は大気中で加熱して硬化処理される。硬化
樹脂成形体の組織が不均質であると、焼成炭化したガラ
ス状カーボン材の組織性状も不均質になり、特に板厚が
厚くなるほど内部蓄熱が増すために表層部に比べて内部
の硬化反応が進行し易くなるので組織の不均質性が増大
する。したがって、硬化反応を均等に進行させるために
は加熱硬化時の昇温速度を調整して硬化反応を緩徐に進
めることが重要であり、昇温速度を10℃/hr以下、好
ましくは5℃/hr以下、更に好ましくは2℃/hr以下に
設定する。最終硬化温度は、樹脂の組成、硬化剤の種類
や配合量などによって異なるが、通常140〜200℃
の温度範囲に設定され、最終硬化温度に所定時間保持す
ることにより硬化反応を終了させる。
【0019】硬化後の樹脂成形体は、黒鉛坩堝に詰める
か、黒鉛板で挟持した状態で窒素、アルゴン等の非酸化
性雰囲気に保持された電気炉あるいはリードハンマー炉
に詰め、800℃以上の温度に加熱することにより焼成
炭化してガラス状カーボン材に転化する。硬化樹脂成形
体は熱伝導率が低いので、焼成炭化過程で表層部に対し
て内部では炭化反応に遅れを生じ易い。このため表層部
における炭化反応の進行に伴って内部では緊張を受けた
状態で炭化反応が進むために、表層部と内部とで組織の
結晶構造に違いが発生する。このような現象を緩和する
ためには焼成炭化時の昇温速度を小さく設定することが
必要となるが、焼成炭化作業の能率化との兼ね合いから
昇温速度を4℃/hr以下に設定することが望ましい。ま
た、焼成炭化過程で、炭化分解の激しい温度域、ガス発
生の激しい温度域、炭化反応が終了して構造変化が起き
る温度域、などの各過程においてその温度に一定時間保
持することも組織構造の均等化を図るうえで有効であ
る。例えば、300〜400℃、400〜500℃およ
び500〜600℃の各温度域において、それぞれ5時
間以上保持する。
【0020】このようにして、樹脂成形体の加熱硬化時
の昇温速度および最終硬化温度、焼成炭化時の昇温速度
および最終焼成温度などの硬化条件および焼成炭化条件
を、厳密に設定、制御することによって本発明のプラズ
マエッチング用電極板に適用される板状ガラス状カーボ
ン材、すなわち表層部と断面中心部における相対強度比
Rの差が0.1以下であり、断面中心部におけるR値が
1.2〜1.7の組織性状を備える厚さ5mm以上の板
状ガラス状カーボン材を製造することが可能となる。
【0021】焼成炭化したガラス状カーボン板は、雰囲
気置換可能な真空炉に入れて、ハロゲン系の精製ガスを
流しながら、1500℃以上に昇温して高純度化処理が
施される。また、電極板に設けるガス流通用の貫通小孔
は、硬化樹脂成形体に予め炭化時の寸法収縮率を見込ん
で穿設するか、又は焼成炭化後のガラス状カーボン板に
放電加工により穿設するかのいずれかの方法で行われ
る。
【0022】
【実施例】以下、本発明の実施例を比較例と対比して具
体的に説明する。
【0023】実施例1〜5、比較例1〜3
(1)プラズマエッチング用電極板の製造
減圧蒸留により精製したフェノール及びホルマリンを常
法に従って縮合し、分子量132、ゲル化時間14分の
フェノール樹脂初期縮合物を得た。このフェノール樹脂
初期縮合物100重量部に対しフルフリルアルコール3
0重量部を添加混合して粘度40ポイズ、樹脂分55重
量%の原料樹脂組成物を調製した。この原料樹脂組成物
を400mm角のポリプロピレン製のバットに流し込み、
10Torr以下の減圧下で3時間脱気処理したのち、電気
オーブンに入れて、昇温速度及び最終硬化温度、時間を
変えて硬化処理を行い、厚さ7mmの板状硬化樹脂成形体
を作製した。
【0024】この板状硬化樹脂成形体を高純度黒鉛板で
挟持して、黒鉛坩堝に入れた状態で電気炉にセットし、
周囲を総灰分100ppm 未満の黒鉛粉で被包して、昇温
速度及び焼成温度を変えて焼成炭化した。なお、焼成過
程の350℃、450℃及び550℃の各温度域におい
て、それぞれ5時間保持した。得られたガラス状カーボ
ン板を雰囲気置換可能な真空炉〔東海高熱工業(株)
製、TP300 〕に移して、精製ガスとして塩素ガス(Cl
2 /Heのモル比:5/95)を流通させながら焼成温
度と同じ温度に加熱して高純度化処理を施した。このよ
うにして厚さ5mmの表面平滑なガラス状カーボン板を製
造した。次いで、その表面に放電加工により直径0.5
mmの貫通孔を7mmの等間隔で500個穿孔して8インチ
ウエハ処理用のプラズマエッチング用電極板を製造し
た。これらの硬化処理条件及び焼成炭化条件を対比して
表1に示した。
【0025】
【表1】【0026】(2)材質特性の測定
このようにして製造したガラス状カーボン板について、
その表層部及び切断した破断面の厚さ方向中心位置(断
面中心部)に、波長5145オングストロームのアルゴ
ンイオンレーザー光を照射してラマンスペクトル分析を
行い、1360±100cm-1と1580±100cm-1の
両バンドにおけるスペクトル強度IA及びIBを測定し
て、相対強度比Rを算出した。それらの結果を表2に示
した。
【0027】
【表2】
【0028】(3)電極性能の評価
これらの電極板をプラズマエッチング装置にセットし、
エッチング処理時間が10時間、100時間、200時
間経過後における電極板の消耗量及びパーティクル発生
量を測定して、その結果を表3に示した。プラズマエッ
チング処理は、反応ガス;トリクロロメタン、キャリア
ガス;アルゴン、反応チャンバー内のガス圧;0.8To
rr、電源周波数;13.5MHz の条件で8インチのシリ
コンウエハ酸化膜について行った。電極板の消耗量は処
理時間毎に電極板の肉厚をマイクロメータにより測定し
て肉厚減少量を消耗量とし、またパーティクル発生数は
各処理時間毎に反応チャンバー内で測定された0.3μ
m 以上の粒子数で示した。得られた結果を表3に示し
た。
【0029】
【表3】【0030】表1〜3の結果から、本発明の特性要件を
満たす板状ガラス状カーボン材からなる実施例の電極板
は、本発明の特性要件を外れる比較例の電極板に比べて
材質の均質性により長時間エッチング処理しても電極板
表面の消耗量が少なく、それに伴いパーティクル発生数
も抑制されることが認められる。
【0031】
【発明の効果】以上のとおり、本発明によればラマンス
ペクトル分析による1360±100cm-1バンド域と1
580±100cm-1バンド域のスペクトル強度の比を相
対強度比Rとして定義し、表層部と断面中心部における
R値の差及び断面中心部におけるR値を特定範囲に設定
した均質組織性状の板状ガラス状カーボン材でプラズマ
エッチング用電極板を構成することにより、エッチング
による電極板の消耗が少なく、パーティクルの発生を抑
制した電極板を提供することが可能となる。したがっ
て、常に安定したエッチング加工が保証されるうえ、電
極板の寿命を大幅に延長することができる。Description: BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a plate-like glassy carbon material used for plasma etching a silicon oxide film on a wafer surface in a semiconductor device manufacturing process. The present invention relates to a configured electrode plate for plasma etching. [0002] Plasma etching in an etching apparatus installed a pair of planar electrodes facing up and down, while introducing halogen-based reactive gas such as CF 4, CHF 3 from the upper electrode between the electrodes A high-frequency power is applied and discharged, and a gas circuit is used to etch a non-photoresisted portion of a wafer mounted on a lower electrode to form a fine circuit pattern with high precision. . The planar electrode used for this plasma etching process needs to have not only excellent conductivity, but also high purity that does not contaminate the wafer and chemical stability that is not easily etched, and currently satisfies these material requirements. For example, an electrode plate made of a glassy carbon material has been useful. A glassy carbon material is a hard carbon material having a macroscopically non-porous three-dimensional network structure obtained by carbonizing a thermosetting resin and having high strength, chemical stability, abrasion resistance, and the like. It has features such as excellent gas impermeability, self-lubricating properties, and robustness, and has few impurities.However, it is particularly advantageous in that fine particles that cause soiling of the wafer during plasma etching are not easily separated from the tissue. There is. However, recently, as the degree of integration of semiconductors has increased, strict material requirements have also been imposed on electrode materials for plasma etching, and a reduction in the level of particles attached to the wafer surface and the degree of wear have been strictly required. . For this reason, there have been many proposals for material improvement for glassy carbon electrodes for plasma etching. [0004] For example, the properties such as purity, porosity, porosity, crystal structure, and the like are to be improved.
0002 to 0.0020%, no crystallite is detected by X-ray diffraction, and a carbon member for a plasma device made of a glassy carbon material having an impurity content of 5 ppm or less (Japanese Patent Laid-Open No.
JP-A-33007), an electrode plate for plasma etching composed of high-purity glassy carbon having a maximum pore diameter of 1 μm or less, an average pore diameter of 0.7 μm or less, and a porosity of 1% or less. Gazette), a plate-like body having a thickness of 2 mm or more made of high-purity glassy carbon, having substantially no grain boundaries on the surface and internal structure, and having a maximum pore diameter of 1
μm or less electrode plate for plasma etching (JP-A-3-28
5086 JP), the following purity characteristics total ash content 5 ppm, metal impurities 2ppm or less, or less total sulfur content 30 ppm, the crystal characteristic lattice spacing d 002 0.0375nm or less, the size of the crystallite is more than 1.3 nm, An electrode plate for plasma etching made of glassy carbon having a material characteristic of specific gravity of 1.50 or more and a bending strength of 1100 kg / cm 2 or more (JP-A-5-320955), and a lattice constant C 0 of 6.990 Å or less. An electrode plate for plasma etching made of glassy carbon having crystals (JP-A-6-128761) has been proposed. [0005] In addition, assuming that the surface property is a target, the surface smoothness of a part consumed by plasma is Rmax.
An electrode plate for plasma etching made of glassy carbon having a diameter of 6 μm or less (Japanese Patent Application Laid-Open No. 6-128762) is disclosed. As a technique for specifying a raw material system of glassy carbon, glass produced using phenol resin and polycarbodiimide resin as raw materials is used. Electrode plate for plasma etching made of glassy carbon material (JP-A-5-347276), electrode plate for plasma etching made of glassy carbon material manufactured using polycarbodiimide resin as a raw material, etc. Has been proposed. The present applicant has examined the relationship between the texture of the glassy carbon constituting the electrode plate for plasma etching and the degree of electrode wear during the etching process, and as a result, has found that the surface of the glassy carbon constituting the electrode plate has been studied. Elucidating the fact that the degree of electrode wear is effectively reduced when the relative intensity of the two Raman bands specified in the Raman spectrum analysis with argon ion laser in a certain wavelength range is within a certain range, In a Raman spectrum using an argon ion laser beam having a wavelength of 5145 angstroms, a formula [R = IA / IB] (where IA is a spectrum intensity in a 1360 ± 100 cm −1 band region, IB
Indicates the spectral intensity of the 1580 ± 100 cm -1 band region), the R value is in the range of 1.0 to 2.0, and the half width of IA is 30 to 90 cm -1 and the half width of IB is An electrode plate for plasma etching made of glassy carbon having properties ranging from 40 to 100 cm -1 has been proposed (JP-A-8-120471). [0007] Further, the applicant of the present invention disclosed in the above-mentioned Japanese Patent Application Laid-Open No. Hei 8-1204.
By developing the technology of Japanese Patent Publication No. 71, the relative intensity ratio R (= IA / IB) is obtained as a textured glassy carbon material that suppresses electrode consumption rate during plasma etching and does not cause separation of fine particles. The average lattice spacing d 002 of the graphite hexagonal mesh layer is R ≧ (d 002 −3.3
An electrode plate for plasma etching made of a glassy carbon material satisfying the relationship of (44) /0.135 was developed and proposed (Japanese Patent Application No. 8-52464). SUMMARY OF THE INVENTION [0008]
According to the electrode plate for plasma etching disclosed in Japanese Patent Application No. 471 and Japanese Patent Application No. 8-52464, electrode consumption and generation of particles can be effectively reduced, and electrode performance can be improved and improved. However, subsequent studies showed that the surface layer of the electrode plate was gradually consumed in the process of plasma etching and the internal structure was exposed, so that the generation of particles increased and the consumption rate tended to increase. This tendency becomes more remarkable as the electrode plate becomes larger and thicker. The present inventor has further studied the relationship between the texture of the glassy carbon material during the etching process and the degree of wear of the electrode plate. In particular, it was confirmed that the difference in the structure between the surface layer portion and the central portion of the cross section greatly affected. The present invention has been completed on the basis of the above findings, and it is an object of the present invention to provide a plasma etching electrode plate made of a sheet-like glassy carbon material, in which the crystal structure of a surface layer portion and an internal structure is improved. By setting the difference in a specific range to homogenize the texture of the structure, and by setting the crystal structure of the internal structure to a property range effective to maintain low resistance to etching wear, a large size exceeding 8 inches An object of the present invention is to provide a plasma etching electrode plate made of a plate-like glassy carbon material which can sufficiently cope with a wafer and can perform a stable etching process for a long period of time. In order to achieve the above object, the present invention provides an electrode plate for plasma etching according to the following formula (1) in Raman spectrum analysis using argon ion laser light having a wavelength of 5145 angstroms. Defines the relative intensity ratio R, and R at the surface layer and the center of the cross section.
Value difference is 0.1 or less, and R
5 m in thickness with a texture in the range of 1.2 to 1.7
It is characterized by being composed of a plate-like glassy carbon material of m or more. R = IA / IB (1) where IA indicates the spectrum intensity in the 1360 ± 100 cm −1 band region, and IB indicates the spectrum intensity in the 1580 ± 100 cm −1 band region. DETAILED DESCRIPTION OF THE INVENTION The electrode plate for plasma etching of the present invention is premised on that it is made of glassy carbon having a uniform structure obtained by firing and curing a thermosetting resin. Total ash content 5ppm or less, metal impurities 2pp
m and a total sulfur content of 30 ppm or less, and is preferably a flat plate having as high a surface smoothness as possible. When the glassy carbon plate is used as the electrode plate for plasma etching, the degree of consumption slightly varies due to the complicated influence of the purity, crystal structure, surface state and the like of the glassy carbon used. Generally, the carbon material two peaks out current in the band region of 1360 cm -1 and 1580 cm -1 when a Raman spectrum analysis, their relative intensity ratio to irregularities of defects and lattice of crystals contained in the structure of the carbon It is known to be involved. For example, in the case of artificial graphite, 1360 cm -1
Although the intensity of the 1580 cm -1 band is higher than that of glassy carbon, the peak of the 1360 cm -1 band is higher in glassy carbon. However, the distribution of peaks and the relative intensity between bands differ depending on the properties of the glassy carbon, and the etching resistance changes. According to the present invention, the surface layer and the center of the cross section of the glassy carbon plate are subjected to Raman spectrum analysis using an argon ion laser beam having a wavelength of 5145 angstroms, and the spectral intensity IA in the 1360 ± 100 cm -1 band region is obtained. The ratio (IA / IB) to the spectral intensity IB in the 1580 ± 100 cm -1 band region is defined as the relative intensity ratio R, and the difference in the value of R between the surface layer portion and the center of the cross section is 0.1 or less. This is the first property requirement. If the difference in R value exceeds 0.1, the difference in texture between the surface layer and the center of the cross section increases, and the consumption rate increases as the internal structure appears due to the wear of the surface layer, and the generation of particles also increases. I do. Further, in the present invention, as a second physical property requirement, the value of the relative intensity ratio R at the center of the cross section needs to be in the range of 1.2 to 1.7. When the R value is less than 1.2, the crystal structure is not amorphous, which is characteristic of glassy carbon, and the etching resistance is reduced.
If it exceeds 7, the carbonization is insufficient, the conductivity and chemical stability are low, the eligibility as an electrode plate is poor, and the etching consumption rate is high. A commercially available micro Raman analyzer can be suitably used for measuring the spectral intensity by Raman spectrum analysis. Further, the surface layer and the center of the cross section of the plate-like glassy carbon material to be measured in the present invention means that the surface layer is near the front surface (the surface facing the wafer) or the back surface of the glassy carbon plate, specifically, 3 from the front and back
The area within 0 μm is defined as the measurement target area. In addition, the glassy carbon plate is cut as the center of the cross-section, and the center position in the thickness direction of the fractured surface, that is, half of the plate thickness as the center position, and the area within 30 μm of the periphery is defined as the measurement target region. I do. The thickness of the sheet-like glassy carbon material is 5 mm.
It is preferable that it is above. The electrode plate for plasma etching of the present invention comprising the plate-like glassy carbon material having the above properties can be manufactured as follows. First, in order to increase the density and purity of the material, a phenol-based, furan-based, or polyimide-based resin with a residual carbon ratio of at least 40% or a thermosetting resin obtained by blending them is selectively used as a raw material. Is done. For example, as a raw material, a phenol and formalin, which have been purified in advance, are subjected to a polycondensation reaction, and have a molecular weight of 100 or more and a gelation time of 5 to 6 hours.
A two-component resin composition having a viscosity of 1 to 100 poise and a resin content of 50% by weight or more is prepared by mixing furan or its derivative compound with a phenol resin precondensate of 0 minutes. As the furan derivative compound, a compound having compatibility with a phenolic resin such as furfuryl alcohol, furfural, and methyl furancarboxylate may be used alone or in combination of two or more. These raw material resins are formed into a predetermined plate shape by an appropriate forming method such as molding or casting, and then the resin molded body is cured by heating in the atmosphere. If the structure of the cured resin molded article is not uniform, the texture of the fired and carbonized glassy carbon material will also be heterogeneous. Is more likely to proceed, so that the heterogeneity of the tissue increases. Therefore, in order for the curing reaction to proceed evenly, it is important to adjust the temperature rise rate during heating and curing to promote the curing reaction slowly, and to increase the temperature rise rate to 10 ° C./hr or less, preferably 5 ° C./hr or less. hr or less, more preferably 2 ° C./hr or less. The final curing temperature varies depending on the composition of the resin, the type and the amount of the curing agent, but is usually 140 to 200 ° C.
The curing reaction is terminated by maintaining the temperature at the final curing temperature for a predetermined time. The cured resin molded product is packed in a graphite crucible or packed in an electric furnace or a lead hammer furnace held in a non-oxidizing atmosphere such as nitrogen or argon while being sandwiched by graphite plates. By heating to a temperature, it is calcined and carbonized to be converted to a glassy carbon material. Since the cured resin molded body has a low thermal conductivity, the carbonization reaction tends to be delayed inside the surface layer in the firing carbonization process. For this reason, the carbonization reaction progresses under tension in the inside as the carbonization reaction progresses in the surface layer portion, so that a difference occurs in the crystal structure of the structure between the surface layer portion and the inside. In order to alleviate such a phenomenon, it is necessary to set the heating rate at the time of calcining and carbonization to be small. However, the rate of heating is set to 4 ° C./hr or less in view of the efficiency of the calcining and carbonizing work. It is desirable. In addition, in the firing carbonization process, the temperature can be maintained for a certain period of time in the temperature range where the carbonization is severe, the temperature where the gas generation is severe, the temperature range where the carbonization reaction ends and the structural change occurs, etc. This is effective in achieving equalization. For example, in each temperature range of 300 to 400 ° C., 400 to 500 ° C., and 500 to 600 ° C., each is maintained for 5 hours or more. In this manner, the curing conditions and the calcination conditions such as the heating rate and the final curing temperature during the heat curing of the resin molded article, the heating rate during the calcination and the final calcination temperature are strictly set and controlled. By doing so, the difference in the relative intensity ratio R between the surface layer portion and the center of the cross section of the plate-like glassy carbon material applied to the electrode plate for plasma etching of the present invention is 0.1 or less, and the R value at the center of the cross section. It is possible to produce a plate-like glassy carbon material having a texture of 1.2 to 1.7 and a thickness of 5 mm or more. The calcined and carbonized glassy carbon plate is placed in a vacuum furnace whose atmosphere can be replaced, and heated to 1500 ° C. or higher while flowing a halogen-based purified gas to be subjected to a high purification treatment. In addition, small gas through holes provided in the electrode plate are drilled in the cured resin molded body in advance in anticipation of the dimensional shrinkage during carbonization, or are drilled in the glassy carbon plate after firing and carbonization by electric discharge machining. Done either way. EXAMPLES Examples of the present invention will be specifically described below in comparison with comparative examples. Examples 1 to 5 and Comparative Examples 1 to 3 (1) Production of an electrode plate for plasma etching Phenol and formalin purified by distillation under reduced pressure were condensed according to a conventional method to give a phenol resin having a molecular weight of 132 and a gelation time of 14 minutes. An initial condensate was obtained. Furfuryl alcohol 3 was added to 100 parts by weight of the phenol resin precondensate.
0 parts by weight were added and mixed to prepare a raw resin composition having a viscosity of 40 poise and a resin content of 55% by weight. Pour this raw resin composition into a 400 mm square polypropylene vat,
After deaeration under reduced pressure of 10 Torr or less for 3 hours, the mixture was placed in an electric oven and cured by changing the heating rate, the final curing temperature, and the time to produce a 7 mm-thick plate-like cured resin molded product. . This plate-shaped cured resin molded product is sandwiched between high-purity graphite plates and set in an electric furnace in a state of being placed in a graphite crucible.
The surroundings were covered with graphite powder having a total ash content of less than 100 ppm, and calcined at different heating rates and different firing temperatures. In the firing process, each of the temperature ranges of 350 ° C., 450 ° C., and 550 ° C. was held for 5 hours. A vacuum furnace capable of replacing the atmosphere of the obtained glassy carbon plate [Tokai Kosen Kogyo Co., Ltd.
TP300], and chlorine gas (Cl
The mixture was heated to the same temperature as the sintering temperature while passing through a 2 / He molar ratio of 5/95) to perform a high-purification treatment. In this way, a glassy carbon plate having a smooth surface with a thickness of 5 mm was produced. Then, the surface was subjected to electrical discharge machining to a diameter of 0.5
500 through-holes having a diameter of 7 mm were formed at regular intervals of 7 mm to manufacture an electrode plate for plasma etching for processing an 8-inch wafer. Table 1 shows a comparison between these curing conditions and calcined carbonization conditions. [Table 1] (2) Measurement of Material Properties Regarding the glassy carbon plate manufactured as described above,
The surface layer and the center position in the thickness direction of the cut surface (the center of the cross section) are irradiated with argon ion laser light having a wavelength of 5145 angstroms to perform Raman spectrum analysis, and 1360 ± 100 cm −1 and 1580 ± 100 cm −1. The relative intensity ratio R was calculated by measuring the spectral intensities IA and IB in both bands. Table 2 shows the results. [Table 2] (3) Evaluation of electrode performance These electrode plates were set in a plasma etching apparatus,
The amount of consumption of the electrode plate and the amount of generated particles after the etching time of 10 hours, 100 hours, and 200 hours were measured, and the results are shown in Table 3. Plasma etching treatment is performed using a reaction gas; trichloromethane, a carrier gas; argon, a gas pressure in a reaction chamber;
rr, power supply frequency; 13.5 MHz, for an 8-inch silicon wafer oxide film. The amount of consumption of the electrode plate was determined by measuring the wall thickness of the electrode plate with a micrometer for each processing time, and the amount of reduction in thickness was used as the consumption amount. The number of particles generated was measured in the reaction chamber at each processing time. 3μ
The number of particles is shown as m or more. Table 3 shows the obtained results. [Table 3] From the results shown in Tables 1 to 3, the electrode plate of the embodiment made of the plate-like glassy carbon material satisfying the characteristic requirements of the present invention has a lower material quality than the electrode plate of the comparative example which does not satisfy the characteristic requirements of the present invention. It can be seen that the homogeneity reduces the amount of wear on the electrode plate surface even after long-time etching, thereby suppressing the number of generated particles. As described above, according to the present invention, the 1360 ± 100 cm −1 band region and the 1
A plate having a homogenous texture in which the ratio of the spectral intensities in the 580 ± 100 cm -1 band region is defined as a relative intensity ratio R, and the difference between the R value between the surface layer and the center of the cross section and the R value at the center of the cross section are set to specific ranges. When the electrode plate for plasma etching is made of a glassy carbon material, it is possible to provide an electrode plate in which the consumption of the electrode plate by etching is small and generation of particles is suppressed. Therefore, stable etching is always ensured, and the life of the electrode plate can be significantly extended.
───────────────────────────────────────────────────── フロントページの続き (58)調査した分野(Int.Cl.7,DB名) C23F 4/00 C01B 31/02 H01L 21/3065 ──────────────────────────────────────────────────続 き Continued on the front page (58) Field surveyed (Int. Cl. 7 , DB name) C23F 4/00 C01B 31/02 H01L 21/3065
Claims (1)
ンイオンレーザー光を用いたラマンスペクトル分析にお
いて下記(1)式で相対強度比Rを定義し、表層部と断
面中心部におけるR値の差が0.1以下であり、かつ断
面中心部におけるR値が1.2〜1.7の範囲の組織性
状を備える厚さ5mm以上の板状ガラス状カーボン材か
らなることを特徴とするプラズマエッチング用電極板。 R=IA/IB …(1) 但し、IAは1360±100cm―1バンド域におけ
るスペクトル強度、IBは1580±100cm―1バ
ンド域におけるスペクトル強度を示す。(57) [Claims 1] In a Raman spectrum analysis using an argon ion laser beam having a wavelength of 5145 angstroms, a relative intensity ratio R is defined by the following equation (1), and the relative intensity ratio R in the surface layer portion and the center portion of the cross section is defined. It is characterized by comprising a plate-like glassy carbon material having a thickness of 5 mm or more and having a texture of a R-value difference of 0.1 or less and a cross-sectional center portion in a range of 1.2 to 1.7. Electrode plate for plasma etching. R = IA / IB (1) Here, IA indicates the spectrum intensity in the 1360 ± 100 cm −1 band region, and IB indicates the spectrum intensity in the 1580 ± 100 cm −1 band region.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP08568097A JP3465838B2 (en) | 1997-03-19 | 1997-03-19 | Electrode plate for plasma etching |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP08568097A JP3465838B2 (en) | 1997-03-19 | 1997-03-19 | Electrode plate for plasma etching |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH10259488A JPH10259488A (en) | 1998-09-29 |
| JP3465838B2 true JP3465838B2 (en) | 2003-11-10 |
Family
ID=13865564
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP08568097A Expired - Fee Related JP3465838B2 (en) | 1997-03-19 | 1997-03-19 | Electrode plate for plasma etching |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3465838B2 (en) |
-
1997
- 1997-03-19 JP JP08568097A patent/JP3465838B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH10259488A (en) | 1998-09-29 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6013236A (en) | Wafer | |
| JP2873988B2 (en) | Electrode plate for plasma etching | |
| US6632761B1 (en) | Silicon carbide powder, method of producing a green body, and method of producing a sintered silicon carbide | |
| JPH1167427A (en) | Heater component | |
| US5892236A (en) | Part for ion implantation device | |
| JP3465838B2 (en) | Electrode plate for plasma etching | |
| JP3437026B2 (en) | Electrode plate for plasma etching and method of manufacturing the same | |
| EP0791948B1 (en) | Plasma-etching electrode plate | |
| JP3349282B2 (en) | Electrode plate for plasma etching | |
| JPH10291813A (en) | Electrode plate for plasma etching | |
| JP6346718B1 (en) | Aluminum nitride particles | |
| JPH03119723A (en) | Electrode plate for plasma etching use | |
| JP2002280316A (en) | Wafer and method of manufacturing the same | |
| JP3736887B2 (en) | Electrode plate for plasma etching | |
| JP3973848B2 (en) | Cylindrical glassy carbon member | |
| JP3255586B2 (en) | Electrode plate for plasma etching | |
| JP3708203B2 (en) | Electrode plate for plasma etching | |
| JPH10101432A (en) | Part for dry etching device | |
| JP3114604B2 (en) | Parts for ion implantation equipment | |
| JPH1179847A (en) | Production of silicon carbide sintered compact | |
| JPH10218664A (en) | Focus ring for plasma etching equipment | |
| JP2002151483A (en) | Plasma etching equipment | |
| JPH11310459A (en) | Glassy carbon material with excellent plasma resistance | |
| JP2002029843A (en) | Protective member for plasma processing equipment | |
| KR101350542B1 (en) | Fabrication method of porous sic platelet ceramics |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20070829 Year of fee payment: 4 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20080829 Year of fee payment: 5 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20080829 Year of fee payment: 5 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20090829 Year of fee payment: 6 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20090829 Year of fee payment: 6 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20100829 Year of fee payment: 7 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110829 Year of fee payment: 8 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120829 Year of fee payment: 9 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120829 Year of fee payment: 9 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130829 Year of fee payment: 10 |
|
| LAPS | Cancellation because of no payment of annual fees |