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JP4403196B2 - Wiring board and multi-chip board - Google Patents
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JP4403196B2 - Wiring board and multi-chip board - Google Patents

Wiring board and multi-chip board Download PDF

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JP4403196B2
JP4403196B2 JP2008057317A JP2008057317A JP4403196B2 JP 4403196 B2 JP4403196 B2 JP 4403196B2 JP 2008057317 A JP2008057317 A JP 2008057317A JP 2008057317 A JP2008057317 A JP 2008057317A JP 4403196 B2 JP4403196 B2 JP 4403196B2
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substrate body
conductor layer
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泰章 吉田
健 藤島
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Niterra Co Ltd
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NGK Spark Plug Co Ltd
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Description

本発明は、セラミックを含む複数の絶縁層からなり且つ反りが少ない配線基板、および複数のかかる配線基板を含む多数個取り基板に関する。   The present invention relates to a wiring board made of a plurality of insulating layers containing ceramics and having little warping, and a multi-cavity board including a plurality of such wiring boards.

焼成後の反りをコントロールするため、半導体素子が搭載される上層に、アルミナ粒の平均粒径が他よりも大きいセラミックグリーンシートを、上層と反対側の下層に、アルミナ粒の平均粒径が他よりも小さいセラミックグリーンシートを、用いて積層し且つ焼成する、多層セラミック回路基板の製造方法が提案されている(例えば、特許文献1参照)。
上記製造方法によれば、焼成後の多層セラミック回路基板は、その中央部が上向きに持ち上がるように反っているため、その後かかる中央部が自重の影響で垂れ下がることで、上記回路基板全体の反りを少なくすることが可能である。
In order to control warping after firing, ceramic green sheets with an average particle size of alumina grains larger than the other layers are placed on the upper layer on which the semiconductor element is mounted, and the average particle size of alumina particles is placed on the lower layer opposite to the upper layer. A method for manufacturing a multilayer ceramic circuit board has been proposed in which a ceramic green sheet smaller than that is laminated and fired (see, for example, Patent Document 1).
According to the above manufacturing method, the fired multilayer ceramic circuit board is warped so that the center part is lifted upward, and then the center part hangs down under the influence of its own weight, thereby warping the entire circuit board. It can be reduced.

特開平10−190228号公報(第1〜4頁、図1〜6)Japanese Patent Laid-Open No. 10-190228 (pages 1 to 4, FIGS. 1 to 6)

ところで、セラミックを含む複数の絶縁層からなり、表面および裏面を有する基板本体のかかる裏面に広い面積を占める裏面導体層を有する形態の配線基板では、焼成された後の上記裏面導体層の表面に、金属メッキ層が形成される。かかる金属メッキ層は、当該裏面導体層に対しその中央部に向かって求心的に圧縮応力を加えるように作用する。このため、前記多層セラミック回路基板の製造方法のように、焼成後に中央部が表面の上方に持ち上がるように反っていると、上記金属メッキを被覆した際、特に当該メッキを厚く形成した場合に、更に上記反りが大きくなることがある、という問題があった。   By the way, in a wiring board having a back conductor layer that occupies a large area on the back surface of the substrate body having a front surface and a back surface, which is composed of a plurality of insulating layers containing ceramic, on the surface of the back conductor layer after firing. A metal plating layer is formed. Such a metal plating layer acts to apply a compressive stress centripetally toward the center of the back conductor layer. For this reason, like the manufacturing method of the multilayer ceramic circuit board, if the center part is warped so as to be lifted above the surface after firing, when the metal plating is coated, particularly when the plating is formed thick, Further, there is a problem that the warpage may be increased.

本発明は、背景技術において説明した問題点を解決し、セラミックを含む複数の絶縁層を積層してなり、表面および裏面を有する基板本体のかかる裏面に広い面積を占める裏面導体層を有し、且つ金属メッキ後の反りが少ない配線基板、および複数のかかる配線基板を含む多数個取り基板を提供する、ことを課題とする。   The present invention solves the problems described in the background art, and is formed by laminating a plurality of insulating layers containing ceramic, and has a back conductor layer that occupies a large area on the back surface of the substrate body having a front surface and a back surface, It is another object of the present invention to provide a wiring board with less warping after metal plating and a multi-piece substrate including a plurality of such wiring boards.

課題を解決するための手段および発明の効果Means for Solving the Problems and Effects of the Invention

本発明は、前記課題を解決するため、焼成後に配線基板の基板本体における中央部が裏面側に下がるように反らせ、裏面導体層の表面に金属メッキした際に前記反りが矯正されるような構造の基板本体を用いる、ことに着想して成されたものである。
即ち、本発明の配線基板(請求項1)は、セラミックを含む複数の絶縁層を積層してなり、表面および裏面を有する基板本体と、かかる基板本体の厚み方向における表面と裏面との中間に位置する仮想の平面を中間平面としたときに、当該中間平面から基板本体の表面側に位置し、且つ含有するセラミックの平均粒径が他の絶縁層よりも大きな第1絶縁層と、上記中間平面から基板本体の表面側に位置し、且つ上記第1絶縁層と他の絶縁層との間に形成され、平面視で第1絶縁層の表面における面積の50%以上を占める単一の内部導体層と、上記基板本体の裏面に形成され、かかる裏面の面積の50%以上を占める単一の裏面導体層と、かかる裏面導体層の表面に形成された金属メッキ層と、上記基板本体の表面に形成され、且つ表面に金属メッキ層が形成されており、上記裏面導体層よりも小さな複数の表面導体層と、を含む、ことを特徴とする。
In order to solve the above-mentioned problem, the present invention warps the central portion of the circuit board body of the wiring board to be lowered to the back side after firing, and corrects the warp when metal plating is performed on the surface of the back conductor layer. The idea is to use the main body of the substrate.
That is, the wiring board of the present invention (Claim 1) is formed by laminating a plurality of insulating layers containing ceramic, and is provided between a substrate body having a front surface and a back surface, and between the front and back surfaces in the thickness direction of the substrate body. A first insulating layer that is located on the surface side of the substrate body from the intermediate plane and has an average grain size of the ceramic that is larger than the other insulating layers, and the intermediate plane A single interior located on the surface side of the substrate body from the plane and formed between the first insulating layer and the other insulating layer and occupying 50% or more of the area of the surface of the first insulating layer in plan view A conductor layer; a single back conductor layer formed on the back surface of the substrate body and occupying 50% or more of the area of the back surface; a metal plating layer formed on the surface of the back conductor layer; Formed on the surface and gold on the surface Plating layer is formed, including a plurality of small surface conductor layer than the back conductor layer, characterized in that.

これによれば、焼成時には、仮想の中間平面から基板本体の表面側に位置する第1絶縁層と内部導体層とによる焼成収縮が、基板本体の裏面に形成された裏面導体層の焼成収縮よりも大きくなるため、中央部が裏面側に下がるように基板本体が反っていた。しかし、大きな面積の裏面導体層および複数の表面導体層に金属メッキ層が被覆された際に、かかる金属メッキ層が生じた裏面導体層をその中央部に向かって圧縮する求心的な応力により、上記反りの方向と反対方向の応力が基板本体の内部に生じたことで、上記反りを矯正ないし解消している。従って、基板本体およびその表・裏面に反りがないか、極く僅かに抑制された配線基板を提供することができる。   According to this, at the time of firing, the firing shrinkage due to the first insulating layer and the internal conductor layer located on the front surface side of the substrate body from the virtual intermediate plane is due to the firing shrinkage of the back surface conductor layer formed on the back surface of the substrate body. Therefore, the substrate main body was warped so that the center part was lowered to the back side. However, when the metal plating layer is coated on the large-area back surface conductor layer and the plurality of surface conductor layers, due to the centripetal stress compressing the back surface conductor layer on which the metal plating layer is generated toward the center, Since the stress in the direction opposite to the direction of the warp is generated inside the substrate body, the warp is corrected or eliminated. Therefore, it is possible to provide a wiring board in which the board main body and the front and back surfaces thereof are not warped or are slightly suppressed.

尚、前記「セラミックを含む」とは、セラミック以外にガラス成分を含有しても良いし、アルミナなどのセラミックを主成分とする形態も含む。
また、前記「第1絶縁層」は、その含有するアルミナなどのセラミックの平均粒径が、他の絶縁層(後述する実施形態では、第2絶縁層と称する)よりも大きいことを示す相対的な呼称である。
更に、前記セラミックの平均粒径は、前記絶縁層における所定倍率の矩形断面において、かかる断面の中心を通る仮想の垂直線の長さ、水平線の長さ、および左右対称な一対の対角線の長さの合計をLとし、前記4つの各線と交差するセラミック粒子の総個数をNとした際に、L/Nによって算出される。
また、前記「中間平面」とは、前記基板本体の厚み方向において、その表面と裏面との中間に位置し、かかる基板本体の中心を含む仮想の平面である。
更に、前記「単一の」とは、複数に分割されることなく連続し、且つ平面視でほぼベタ状にして形成されている形態を示す。
また、内部導体層と裏面導体層とを50%以上としたのは、これらの前記面積率が50%未満では、焼成時において焼成中の積層体に対し、これらの平面方向に沿った焼成収縮による圧縮応力を生じ難く成り得るためである。
更に、表面導体層には、パッドまたは所定パターンの配線層が含まれる。
加えて、前記金属メッキ層は、例えば、Niメッキ層およびAuメッキ層からなり、何れも電解メッキによって形成される。
The term “including ceramic” may include a glass component in addition to ceramic, and includes a form mainly composed of ceramic such as alumina.
In addition, the “first insulating layer” is a relative value that indicates that the average particle size of ceramics such as alumina contained therein is larger than that of other insulating layers (referred to as second insulating layers in the embodiments described later). It is a name.
Further, the average grain size of the ceramic is such that, in a rectangular cross section of the insulating layer at a predetermined magnification, the length of a virtual vertical line passing through the center of the cross section, the length of a horizontal line, and the length of a pair of symmetrical diagonal lines Is calculated by L / N, where L is the total number and N is the total number of ceramic particles intersecting each of the four lines.
The “intermediate plane” is an imaginary plane that is located between the front surface and the back surface in the thickness direction of the substrate body and includes the center of the substrate body.
Further, the “single” indicates a form that is continuous without being divided into a plurality of parts and is substantially solid in a plan view.
Moreover, the reason why the inner conductor layer and the back conductor layer are 50% or more is that when the area ratio is less than 50%, the shrinkage of firing along the planar direction with respect to the laminate being fired at the time of firing. This is because it is difficult to generate a compressive stress due to.
Further, the surface conductor layer includes a pad or a wiring layer having a predetermined pattern.
In addition, the metal plating layer includes, for example, a Ni plating layer and an Au plating layer, both of which are formed by electrolytic plating.

また、本発明には、前記基板本体の表面あるいは第1絶縁層の表面における外周辺に沿って、平面視が矩形を呈する枠形導体層が形成されている、配線基板(請求項2)も含まれる。
これによれば、焼成時には、前記第1絶縁層、内部導体層、およびに枠形導体層よる焼成収縮が、基板本体の裏面に形成された裏面導体層の焼成収縮よりも大きくなり、中央部が裏面側に下がるように基板本体が反るが、前記裏面導体層および複数の表面導体層に金属メッキ層が被覆された際に、かかる金属メッキ層が生じた裏面導体層をその中央部に向かって圧縮する求心的な応力により、上記反りの方向と反対方向の応力が基板本体の内部に生じて、上記反りが矯正ないし解消された配線基板を提供できる。
The present invention also provides a wiring substrate (Claim 2) in which a frame-shaped conductor layer having a rectangular shape in plan view is formed along the outer periphery of the surface of the substrate body or the surface of the first insulating layer. included.
According to this, during firing, the firing shrinkage due to the first insulating layer, the inner conductor layer, and the frame-shaped conductor layer is larger than the firing shrinkage of the back conductor layer formed on the back surface of the substrate body, and the center portion The main body of the substrate is warped so that the lower surface side is lowered, but when the rear surface conductor layer and the plurality of front surface conductor layers are coated with a metal plating layer, the rear surface conductor layer in which the metal plating layer is generated is formed in the central portion. Due to the centripetal stress compressing toward the substrate, a stress in the direction opposite to the direction of the warp is generated inside the substrate body, and a wiring board in which the warp is corrected or eliminated can be provided.

一方、本発明の多数個取り基板(請求項3)は、複数の前記配線基板を縦横に隣接して配置した製品領域と、少なくともかかる製品領域の外周における何れか一辺に沿って位置し、セラミックを含む複数の絶縁層からなる耳部と、を備えている、ことを特徴とする。
これによれば、反りの少ない基板本体を有する複数の配線基板を、縦横に隣接して併有する形態として、提供することが可能となる。
On the other hand, the multi-piece substrate of the present invention (Claim 3) is located along any one side of a product region in which a plurality of the wiring substrates are arranged vertically and horizontally and at least the outer periphery of the product region. And an ear portion made of a plurality of insulating layers.
According to this, it becomes possible to provide a plurality of wiring boards having a board body with little warpage as a form having both vertically and horizontally adjacent to each other.

付言すれば、本発明には、セラミック粒子を含む複数の第2グリーンシートと、前記セラミック粒子よりも平均粒径が大きなセラミック粒子を含む第1グリーンシートと、を形成する工程と、最上層となる第2グリーンシートの表面に複数の表面導体を形成し、最下層となる第2グリーンシートの裏面にかかる裏面の50%以上を占める単一の裏面導体層を形成し、上記第1グリーンシートの表面にかかる表面の50%以上を占める単一の中間導体層を形成する工程と、上記最上層となる第2グリーンシートと、最下層となる第2グリーンシートとの間で且つ前者の表面と後者の裏面との中間面よりも前者の表面側に、上記第1グリーンシートを挟んで、係ると第1グリーンシートと複数の第2グリーンシートとを積層して、未焼成の積層体を形成する工程と、かかる積層体を焼成する工程と、かかる焼成により得られた焼成済みの基板本体の表面に位置する複数の表面導体層、およびかかる基板本体の裏面に位置する単一の裏面導体層との表面に、金属メッキ層を被覆する工程と、を含む、配線基板の製造方法も含まれ得る。   In other words, the present invention includes a step of forming a plurality of second green sheets containing ceramic particles, and a first green sheet containing ceramic particles having an average particle size larger than the ceramic particles, and an uppermost layer. Forming a plurality of surface conductors on the surface of the second green sheet, forming a single back conductor layer occupying 50% or more of the back surface of the back surface of the second green sheet serving as the bottom layer, and forming the first green sheet A former intermediate surface between the step of forming a single intermediate conductor layer occupying 50% or more of the surface of the first layer, the second green sheet as the uppermost layer, and the second green sheet as the lowermost layer The first green sheet is sandwiched between the first green sheet and the intermediate surface between the latter and the back surface, and the first green sheet and the plurality of second green sheets are stacked, and an unfired laminate A step of forming, a step of firing such a laminate, a plurality of surface conductor layers located on the surface of the fired substrate body obtained by such firing, and a single back conductor located on the back surface of the substrate body A method of manufacturing a wiring board, including a step of coating a metal plating layer on a surface of the layer, may also be included.

前記配線基板の製造方法による場合、焼成時には、中央部が裏面側に凸形となるように基板本体が反るが、裏面導体層および表面導体層に金属メッキ層が被覆された際には、上記反りの方向と反対方向の応力が生じ、上記反りを矯正ないし解消する。その結果、基板本体およびその表・裏面に反りがなすか、極く僅かに抑制された配線基板を確実に製造することが可能となる。
尚、前記製造方法は、複数の前記配線基板を縦横に隣接して配置した製品領域と、少なくともかかる製品領域の外周における何れか一辺に沿って位置し、セラミックを含む複数の絶縁層からなる耳部と、を備えた多数個取り基板の形態として実施することも可能である。
In the case of the wiring board manufacturing method, at the time of firing, the substrate body is warped so that the center part is convex on the back surface side, but when the metal plating layer is coated on the back conductor layer and the surface conductor layer, Stress in a direction opposite to the direction of the warp is generated, and the warp is corrected or eliminated. As a result, it is possible to reliably manufacture a wiring substrate in which the substrate main body and the front and back surfaces thereof are warped or very slightly suppressed.
The manufacturing method includes a product region in which a plurality of wiring boards are arranged adjacent to each other in the vertical and horizontal directions, and an ear formed of at least one side of the outer periphery of the product region and including a plurality of insulating layers containing ceramic. It is also possible to implement in the form of a multi-piece substrate provided with a portion.

また、本発明には、前記耳部は、前記製品領域の外周を囲む四辺に沿って位置し、かかる耳部における表面または前記第1絶縁層の表面に平面視が矩形を呈する外側枠形導体層が形成されている、多数個取り基板(請求項4)も含まれる。
これによれば、複数の配線基板が配置された前記製品領域の反りが、矯正ないし解消されことに起因して、かかる製品領域の外周を囲む耳部を裏面側に反らせようとする内部応力を、前記外側枠形導体層の焼成収縮による上記製品領域の中心部側に向かう応力により、解消ないし低減することが可能となる。従って、製品領域および耳部の双方に反りが皆無であるか、極くに抑制された多数個取り基板とすることができる。
According to the present invention, the ear portion is located along four sides surrounding the outer periphery of the product region, and the outer frame conductor has a rectangular shape in plan view on the surface of the ear portion or the surface of the first insulating layer. Also included is a multi-piece substrate (Claim 4) on which the layers are formed.
According to this, due to the correction or elimination of the warpage of the product region where a plurality of wiring boards are arranged, the internal stress that tends to warp the ear portion surrounding the outer periphery of the product region to the back surface side. The stress toward the center of the product region due to the firing shrinkage of the outer frame conductor layer can be eliminated or reduced. Therefore, it is possible to obtain a multi-chip substrate in which both the product region and the ear portion are free from warping or extremely suppressed.

更に、本発明には、前記製品領域に配置された配線基板ごとの基板本体の表面あるいは第1絶縁層の表面における外周辺に沿って、それぞれ平面視が矩形を呈する枠形導体層が形成されている、多数個取り基板(請求項5)も含まれる。
これによれば、焼成時に、前記配線基板ごとの第1絶縁層およびに内部導体層よる焼成収縮、あるいはこれらにを加えた耳部の外側枠形導体層による焼成収縮に対し、更に枠形導体層による焼成収縮が加わる。このため、前記裏面導体層および複数の表面導体層に金属メッキ層を被覆した際に、かかる金属メッキ層が生じる裏面導体層をその中央部に向かって圧縮する求心的な応力を、一層確実に抑制ないし低減して、製品領域に反りが少ないか、あるいは製品領域および耳部の双方に反りが少ない多数個取り基板とすることができる。
Furthermore, in the present invention, a frame-shaped conductor layer having a rectangular shape in plan view is formed along the outer periphery of the surface of the substrate body or the surface of the first insulating layer for each wiring substrate arranged in the product region. A multi-piece substrate (Claim 5) is also included.
According to this, in the firing, the frame-shaped conductor is further protected against the firing shrinkage caused by the first insulating layer and the inner conductor layer for each wiring board, or the firing shrinkage caused by the outer frame-shaped conductor layer of the ear portion added thereto. Firing shrinkage due to the layer is added. For this reason, when the back surface conductor layer and the plurality of front surface conductor layers are coated with a metal plating layer, the centripetal stress that compresses the back surface conductor layer in which the metal plating layer is generated toward the central portion thereof is further ensured. By suppressing or reducing, it is possible to obtain a multi-chip substrate in which there is little warpage in the product area, or in which both the product area and the ear are less warped.

以下において、本発明を実施するための最良の形態について説明する。
図1は、本発明による一形態の配線基板1を示す垂直断面図である。
配線基板1は、図1に示すように、表面3および裏面4を有する基板本体2と、その表面3の周辺部に形成された複数のパッド(表面導体層)5と、基板本体2の内部に形成された内部導体層6と、基板本体2の裏面4に形成された裏面導体層8と、を備えている。
基板本体2は、ガラス−アルミナ(セラミック)からなり、アルミナ粒の平均粒径が約3.6μmと比較的大きく且つ厚みが125μmの第1絶縁層s1と、その上下両面に積層され、上記同様のガラス−アルミナからなり、アルミナ粒の平均粒径が約3.0μmと比較的小さく且つ厚みがそれぞれ125μmの第2絶縁層(他の絶縁層)s21〜s23とからなっている。
尚、基板本体2の表面3と裏面4との中間には、仮想の中間平面Fが位置し、この中間平面Fは、基板本体2では、第1絶縁層s1と第2絶縁層s22との間に位置している。また、第1絶縁層s1および第2絶縁層s21〜s23に含有されているガラス成分とアルミナとの比は、6:4ないし4:6の範囲である。
In the following, the best mode for carrying out the present invention will be described.
FIG. 1 is a vertical sectional view showing an embodiment of a wiring board 1 according to the present invention.
As shown in FIG. 1, the wiring substrate 1 includes a substrate body 2 having a front surface 3 and a back surface 4, a plurality of pads (surface conductor layers) 5 formed on the periphery of the surface 3, and the interior of the substrate body 2. And the back conductor layer 8 formed on the back surface 4 of the substrate body 2.
The substrate body 2 is made of glass-alumina (ceramic), and has a first insulating layer s1 having a relatively large average particle diameter of alumina particles of about 3.6 μm and a thickness of 125 μm, and is laminated on both upper and lower surfaces thereof. Glass-alumina, and the average particle diameter of alumina particles is relatively small, about 3.0 μm, and the second insulating layers (other insulating layers) s21 to s23 each having a thickness of 125 μm.
In addition, a virtual intermediate plane F is located between the front surface 3 and the back surface 4 of the substrate body 2, and this intermediate plane F corresponds to the first insulating layer s 1 and the second insulating layer s 22 in the substrate body 2. Located between. Further, the ratio of the glass component and alumina contained in the first insulating layer s1 and the second insulating layers s21 to s23 is in the range of 6: 4 to 4: 6.

図1に示すように、基板本体2の中間平面Fから表面3側であって、第1絶縁層s1と最上層の第2絶縁層s21との間には、平面視で第1絶縁層s1の表面における面積の50%以上を占める比較的面積の広いベタ状の内部導体層6が形成されている。かかる単一の内部導体層6は、厚みが約40μmのAg層からなり、例えば、接地層または電源層として利用される。
また、第1絶縁層s1と最上層の第2絶縁層s21との間で且つ上記内部導体層6の周囲には、第1絶縁層s1の外周辺に沿って平面視が矩形(正方形または長方形)を呈する枠形導体層14が、電気的に独立して形成されている。尚、該枠形導体層14は、前記同様の厚みのAgからなり、基板本体2の表面3の外周辺に沿った上記と同じ位置に形成して良い。
As shown in FIG. 1, on the surface 3 side from the intermediate plane F of the substrate body 2, and between the first insulating layer s1 and the uppermost second insulating layer s21, the first insulating layer s1 in plan view. A solid internal conductor layer 6 having a relatively large area, which occupies 50% or more of the area on the surface, is formed. The single inner conductor layer 6 is made of an Ag layer having a thickness of about 40 μm, and is used as, for example, a ground layer or a power supply layer.
In addition, between the first insulating layer s1 and the uppermost second insulating layer s21 and around the inner conductor layer 6, the plane view is rectangular (square or rectangular) along the outer periphery of the first insulating layer s1. ) Is formed electrically independently. The frame-shaped conductor layer 14 is made of Ag having the same thickness as described above, and may be formed at the same position along the outer periphery of the surface 3 of the substrate body 2.

更に、基板本体2の表面3形成された複数のパッド5は、図1中のX部分の拡大図で示すように、厚みが約15μmのAg層9、その表面に形成された厚みが約5〜9μmのNiメッキ層(金属メッキ層)11、および最表層に形成され厚みが約0.1〜0.3μmのAuメッキ層(金属メッキ層)12からなっている。
加えて、基板本体2の裏面4には、その面積の50%以上を占める比較的広い面積の裏面導体層8が形成されている。かかる単一の裏面導体層8は、図1中のY部分の部分拡大図で示すように、厚みが約15μmのAg層10と、その表面に順次形成された上記同様のNiメッキ層11およびAuメッキ層12とからなっている。かかる裏面導体層8は、接地層または信号層として利用される。
Further, the plurality of pads 5 formed on the surface 3 of the substrate main body 2 have an Ag layer 9 having a thickness of about 15 μm and a thickness formed on the surface of about 5 as shown in the enlarged view of the portion X in FIG. It consists of a Ni plating layer (metal plating layer) 11 having a thickness of ˜9 μm and an Au plating layer (metal plating layer) 12 having a thickness of about 0.1 to 0.3 μm formed on the outermost layer.
In addition, on the back surface 4 of the substrate body 2, a relatively wide area back surface conductor layer 8 occupying 50% or more of the area is formed. As shown in the partial enlarged view of the Y portion in FIG. 1, the single back conductor layer 8 includes an Ag layer 10 having a thickness of about 15 μm, a Ni plating layer 11 similar to the above, It consists of an Au plating layer 12. The back conductor layer 8 is used as a ground layer or a signal layer.

図1に示すように、各パッド5には、最上層の第2絶縁層s21を貫通するビア導体vが接続され、これを介して前記内部導体層6にも導通されている。また、各パッド5は、中間平面Fよりも裏面4側の第2絶縁層s22,s23を貫通するビア導体vを介して、第2絶縁層s22,s23間に形成された所定パターンを呈する複数の配線層7や、裏面導体層8とも導通されている。
尚、上記ビア導体vや配線層7もAgからなり、個々の配線層7は、第2絶縁層s23の表面における面積が約5〜10%である。また、第1絶縁層s1と第2絶縁層s22との間には、上記同様の面積率の図示しない配線層を、中間平面Fとほぼ同一平面に形成しても良く、かかる配線層も上記ビア導体vを介して、内部導体層6や配線層7などと導通させても良い。
As shown in FIG. 1, each pad 5 is connected to a via conductor v penetrating through the uppermost second insulating layer s21, and is electrically connected to the internal conductor layer 6 through the via conductor v. Further, each pad 5 exhibits a plurality of predetermined patterns formed between the second insulating layers s22 and s23 through via conductors v penetrating the second insulating layers s22 and s23 on the back surface 4 side with respect to the intermediate plane F. The wiring layer 7 and the back conductor layer 8 are electrically connected.
The via conductor v and the wiring layer 7 are also made of Ag, and each wiring layer 7 has an area of about 5 to 10% on the surface of the second insulating layer s23. Further, a wiring layer (not shown) having the same area ratio as described above may be formed on the substantially same plane as the intermediate plane F between the first insulating layer s1 and the second insulating layer s22. The internal conductor layer 6 and the wiring layer 7 may be electrically connected via the via conductor v.

以上のような配線基板1によれば、基板本体2の焼成時には、前記中間平面Fから基板本体2の表面3側に位置する第1絶縁層s1、内部導体層6、および枠形導体層14による焼成収縮が、基板本体2の裏面4に形成された裏面導体層8となるAg層(10)の焼成収縮よりも大きくなるため、中央部が裏面4側に凸形になるように基板本体2が反っている。しかし、大きな裏面導体層4および複数のパッド5の表面にNiメッキ層11およびAuメッキ層12を被覆した際に、裏面導体層8をその中央部に向かって圧縮する求心的な応力によって、上記反りの方向と反対方向の圧縮応力が基板本体2の内部に生じ、上記反りが矯正ないし解消されている。従って、基板本体2およびその表・裏面3,4に反りがないか、極く僅かに抑制された配線基板1となっている。このため、後工程において、例えば、かかる配線基板1をダイの表面に容易に負圧吸着させることが可能となる。   According to the wiring substrate 1 as described above, when the substrate body 2 is fired, the first insulating layer s1, the inner conductor layer 6, and the frame-shaped conductor layer 14 located on the surface 3 side of the substrate body 2 from the intermediate plane F. Is larger than the firing shrinkage of the Ag layer (10), which is the back conductor layer 8 formed on the back surface 4 of the substrate body 2, so that the central portion of the substrate body is convex toward the back surface 4 side. 2 is warped. However, when the Ni plating layer 11 and the Au plating layer 12 are coated on the surfaces of the large back surface conductor layer 4 and the plurality of pads 5, the above-described centripetal stress compresses the back surface conductor layer 8 toward the central portion thereof. A compressive stress in the direction opposite to the direction of the warp is generated in the substrate body 2, and the warp is corrected or eliminated. Accordingly, the circuit board body 2 and the front and back surfaces 3 and 4 thereof are not warped or are slightly suppressed. For this reason, it becomes possible to adsorb | suck such a wiring board 1 to the surface of die | dye easily in a post process, for example.

図2は、複数の前記配線基板1を縦横に隣接して併有する多数個取り基板20の概略を示す垂直断面図である。
多数個取り基板20は、図2に示すように、平面視で複数の前記配線基板1を縦横に隣接して配置した製品領域paと、かかる製品領域paの外周における4辺に沿って位置し、且つガラス−アルミナ(セラミック)からなって前記第1絶縁層s1および第2絶縁層s21〜s23からなる耳部mと、を備えている。互いに隣接する配線基板1,1間、および外周の配線基板1と耳部mとの間は、図2中の一点鎖線で示す仮想の切断予定面Cによって、区画されている。
FIG. 2 is a vertical cross-sectional view showing an outline of a multi-chip substrate 20 having a plurality of wiring boards 1 adjacent to each other vertically and horizontally.
As shown in FIG. 2, the multi-chip substrate 20 is located along a product area pa in which a plurality of the wiring boards 1 are arranged vertically and horizontally in plan view and four sides on the outer periphery of the product area pa. And ears m made of glass-alumina (ceramic) and made of the first insulating layer s1 and the second insulating layers s21 to s23. The wiring boards 1 and 1 adjacent to each other and between the wiring board 1 on the outer periphery and the ear portion m are partitioned by a virtual scheduled cutting surface C indicated by a one-dot chain line in FIG.

上記耳部mには、製品領域paの外周を囲む四辺に沿って、該耳部mにおける第1絶縁層s1の表面に、平面視が矩形の外側枠形導体層16が形成されている。かかる外側枠形導体層16も、前記同様の厚みのAgからなり、電気的に独立しているほか、耳部mの外側面に形成される次述するメッキ用電極と製品領域pa内に位置する各配線基板1の裏面導体層8などとの間を導通するメッキ配線(図示せず)の一部としても使用され得る。
尚、耳部mの外側面には、各配線基板1のパッド5や裏面導体層8にNiメッキおよびAuメッキを施すためのメッキ用電極(図示せず)が形成されている。
上記多数個取り基板20によれば、反りの少ない基板本体2を有する複数の配線基板1を、縦横に隣接して併有し、且つ反りの少ない耳部mを備える形態として提供することができる。
An outer frame-shaped conductor layer 16 having a rectangular shape in plan view is formed on the surface of the first insulating layer s1 in the ear portion m along the four sides surrounding the outer periphery of the product region pa. The outer frame-shaped conductor layer 16 is also made of Ag having the same thickness as described above and is electrically independent, and is positioned in the product area pa and the electrode for plating described below formed on the outer surface of the ear portion m. It can also be used as part of a plated wiring (not shown) that conducts between the back surface conductor layer 8 and the like of each wiring board 1 to be performed.
A plating electrode (not shown) for applying Ni plating and Au plating to the pad 5 and back conductor layer 8 of each wiring board 1 is formed on the outer surface of the ear m.
According to the multi-cavity substrate 20, a plurality of wiring boards 1 having the board body 2 with less warpage can be provided as a form having the ear part m having both the vertical and horizontal sides and little warpage. .

前記配線基板1は、以下のようにして製造した。
予め、平均粒径が約3.0μmのアルミナ粉末、ガラス粒子、有機系バインダ、および溶剤を所定量ずつ配合して、セラミックスラリを形成し、これをドクターブレード法によりシート状に成形することで、図3に示すように、3つの第2グリーンシートg21〜g23を形成した。
また、平均粒径が約3.6μmのアルミナ粉末、ガラス粒子、有機系バインダ、および溶剤を所定量ずつ配合して、セラミックスラリを形成し、上記同様に成形して、第1グリーンシートg1を形成した。
第2グリーンシートg21〜g23は、それぞれ厚みが約130μmで、含有するアルミナ(セラミック成分)とガラス成分との重量比が6:4であり、追って前記第2絶縁層s21〜s23となる。一方、第1グリーンシートg1も上記と同じ厚みおよび重量比で、追って前記第1絶縁層s1となる。
The wiring board 1 was manufactured as follows.
A ceramic slurry is formed in advance by blending predetermined amounts of alumina powder having an average particle size of about 3.0 μm, glass particles, an organic binder, and a solvent, and this is formed into a sheet by a doctor blade method. As shown in FIG. 3, three second green sheets g21 to g23 were formed.
Further, a predetermined amount of alumina powder having an average particle size of about 3.6 μm, glass particles, an organic binder, and a solvent is blended in a predetermined amount to form a ceramic slurry, and molded in the same manner as above to obtain the first green sheet g1. Formed.
The second green sheets g21 to g23 each have a thickness of about 130 μm, and the weight ratio of the contained alumina (ceramic component) to the glass component is 6: 4. The second green sheets g21 to g23 become the second insulating layers s21 to s23 later. On the other hand, the first green sheet g1 also becomes the first insulating layer s1 later with the same thickness and weight ratio as described above.

先ず、図3に示すように、第1グリーンシートg1および第2グリーンシートg21〜g23の所定の位置に対し、パンチングを施して、ビアホールhを形成し、これらにAg粉末、有機系バインダ、および溶剤を所定量ずつ配合した導電性のペーストを充填して、ビア導体vを形成した。尚、図3では、第1グリーンシートg1を貫通するビアホールhおよびビア導体vを省略した。
次いで、第2グリーンシートg21の上面、第1グリーンシートg1の上面、および、第2グリーンシートg23の上・下面に、上記同様の導電性のペーストを約15〜40μmの厚みで印刷して、未焼成の複数のAu層9、ベタ状の内部導体層6、枠形導体層14、配線層7、およびベタ状のAu層10を形成した。
この際、内部導体層6は、第1グリーンシートg1の上面(表面)の50%以上を占め、Au層10は、第2グリーンシートg23の下面(裏面)の50%以上を占めるよう形成された。
First, as shown in FIG. 3, punching is performed on predetermined positions of the first green sheet g1 and the second green sheets g21 to g23 to form via holes h, and Ag powder, an organic binder, and A via conductor v was formed by filling a conductive paste containing a predetermined amount of solvent. In FIG. 3, the via hole h and the via conductor v penetrating the first green sheet g1 are omitted.
Next, the same conductive paste as described above is printed on the upper surface of the second green sheet g21, the upper surface of the first green sheet g1, and the upper and lower surfaces of the second green sheet g23 to a thickness of about 15 to 40 μm. A plurality of unfired Au layers 9, a solid inner conductor layer 6, a frame-shaped conductor layer 14, a wiring layer 7, and a solid Au layer 10 were formed.
At this time, the internal conductor layer 6 occupies 50% or more of the upper surface (front surface) of the first green sheet g1, and the Au layer 10 occupies 50% or more of the lower surface (back surface) of the second green sheet g23. It was.

次に、図3中の矢印で示すように、第2グリーンシートg21、第1グリーンシートg1、および第2グリーンシートg22,g23の順で、これらを厚み方向に沿って積層し且つ圧着した。その結果、図4に示すように、第1グリーンシートg1および第2グリーンシートg21〜g23からなり、表面3および裏面4を有する基板本体2を備えた未焼成の積層体GSが形成された。かかる積層体GSの基板本体2の厚み方向における表面3と裏面4との中間は、第1グリーンシートg1と第2グリーンシートg22との境界面であり、且つ図4中の一点鎖線で示すように、基板本体2の重心を含む仮想の中間平面Fが位置している。
かかる未焼成の積層体GSを、焼成炉内に挿入し、所定の温度帯で焼成した。その結果、図5に示すような焼成済みの積層体SSが得られた。
Next, as indicated by the arrows in FIG. 3, the second green sheet g21, the first green sheet g1, and the second green sheets g22 and g23 were laminated in the thickness direction and pressure-bonded in this order. As a result, as shown in FIG. 4, an unfired laminated body GS including the substrate body 2 having the front surface 3 and the back surface 4 formed of the first green sheet g1 and the second green sheets g21 to g23 was formed. The middle of the front surface 3 and the back surface 4 in the thickness direction of the substrate body 2 of the laminate GS is a boundary surface between the first green sheet g1 and the second green sheet g22, and is indicated by a one-dot chain line in FIG. In addition, a virtual intermediate plane F including the center of gravity of the substrate body 2 is located.
The unfired laminate GS was inserted into a firing furnace and fired at a predetermined temperature zone. As a result, a fired laminate SS as shown in FIG. 5 was obtained.

図5に示すように、焼成済みの積層体SSは、前記第1グリーンシートg1が焼成されたガラス−アルミナの第1絶縁層s1と、その上下に位置し且つ前記第2グリーンシートg21〜g23が焼成されたガラス−アルミナの第2絶縁層(他の絶縁層)s21〜s23とが一体となった基板本体2を有する。しかも、かかる基板本体2は、図5に示すように、その表面3の中央部が裏面4側に凹むと共に、裏面4の中央部が下向きに凸形状に膨んでおり、側面視で緩やかなほぼU字形を呈するように反っている。
かかる焼成後の基板本体2の反りは、前記焼成時において、中間平面Fから基板本体2の表面3側に位置する第1グリーンシートg1および内部導体層6の焼成収縮による内部応力が、基板本体2の裏面4に位置するAg層10の焼成収縮による圧縮応力よりも大きかったことに起因していた、ものと推定される。
As shown in FIG. 5, the fired laminate SS includes a glass-alumina first insulating layer s <b> 1 obtained by firing the first green sheet g <b> 1 and the second green sheets g <b> 21 to g <b> 23 located above and below the first insulating layer s <b> 1. Has a substrate body 2 in which glass-alumina second insulating layers (other insulating layers) s21 to s23 are fired. In addition, as shown in FIG. 5, the substrate body 2 has a central portion of the front surface 3 that is recessed toward the back surface 4 and a central portion of the back surface 4 that protrudes downward in a convex shape. Warps to present a U-shape.
The warpage of the substrate body 2 after firing is caused by internal stress due to firing shrinkage of the first green sheet g1 and the inner conductor layer 6 located on the surface 3 side of the substrate body 2 from the intermediate plane F during the firing. It is presumed that this was due to the fact that the Ag layer 10 located on the back surface 4 of No. 2 was larger than the compressive stress due to firing shrinkage.

即ち、第1グリーンシートg1に含有されていたアルミナ粉末の平均粒径は、第2グリーンシートg21〜g23に含有されていたアルミナ粉末の平均粒径よりも大きいため、第1グリーンシートg1の内部では、比較的大粒のアルミナ粉末の間に位置するガラス成分などの体積(量)が、第2グリーンシートg21〜g23に比べて、比較的多くなっていた。このため、第1グリーンシートg1の焼成収縮量(率)が、第2グリーンシートg21〜g23の焼成収縮量よりも大きくなると共に、隣接する内部導体層6および枠形導体層14の焼成収縮量と相俟って、基板本体2の中間平面Fから表面3側に、中央部が凹み且つ周辺部を持ち上げるような内部応力が生じた。かかる内部応力が、平面視で内部導体層6とほぼ同じ面積である裏面4側のAg層10による焼成収縮量に打ち勝ったことで、前記のような反りが基板本体2に生じた、ものと推定される。   That is, since the average particle size of the alumina powder contained in the first green sheet g1 is larger than the average particle size of the alumina powder contained in the second green sheets g21 to g23, the inside of the first green sheet g1 Then, the volume (amount) of a glass component or the like located between relatively large alumina powders was relatively larger than that of the second green sheets g21 to g23. Therefore, the firing shrinkage (rate) of the first green sheet g1 is larger than the firing shrinkage of the second green sheets g21 to g23, and the firing shrinkage of the adjacent inner conductor layer 6 and frame-shaped conductor layer 14 is increased. Together with this, an internal stress was generated in which the central part was recessed and the peripheral part was lifted from the intermediate plane F of the substrate body 2 to the surface 3 side. Such internal stress has overcome the amount of firing shrinkage caused by the Ag layer 10 on the back surface 4 side, which has almost the same area as the internal conductor layer 6 in plan view, and thus the warpage as described above has occurred in the substrate body 2. Presumed.

そして、前記反りを有する基板本体2の表面3に位置する複数のAg層9と、裏面4に位置するベタ状のAg層10との表面に対し、電解Niメッキおよび電解Auメッキを順次施して、それぞれ厚みが5〜7μmのNiメッキ層11、および厚みが0.1〜0.3μmのAuメッキ層12を形成した。
その結果、図6で示すように、基板本体2の表面3には、複数の前記パッド5が形成され、裏面4には、前記裏面導体層8が形成されて、前記配線基板1が得られた。かかる配線基板1は、図1で示したように、その基板本体2の表面3および裏面4がほとんど平坦面となっており、前記反りが解消されていた。
前記反りが解消したのは、前記メッキ時において、Ag層10の表面にNiメッキ層11およびAuメッキ層12を形成した際に、これらメッキ層11,12が、図6中の破線の矢印で示すように、メッキされた前記裏面導体層8に対し、その中央部に向かって求心的に圧縮する応力fを生じさせた、ことによるものと推定される。
Then, electrolytic Ni plating and electrolytic Au plating are sequentially applied to the surfaces of the plurality of Ag layers 9 located on the front surface 3 of the substrate body 2 having warpage and the solid Ag layer 10 located on the back surface 4. A Ni plating layer 11 having a thickness of 5 to 7 μm and an Au plating layer 12 having a thickness of 0.1 to 0.3 μm were formed.
As a result, as shown in FIG. 6, a plurality of the pads 5 are formed on the front surface 3 of the substrate body 2, and the back conductor layer 8 is formed on the back surface 4 to obtain the wiring substrate 1. It was. As shown in FIG. 1, the front surface 3 and the rear surface 4 of the circuit board body 2 of the wiring board 1 are almost flat, and the warpage is eliminated.
The warping was eliminated when the Ni plating layer 11 and the Au plating layer 12 were formed on the surface of the Ag layer 10 at the time of plating. As shown in the figure, it is presumed that the stress f compressing centripetally toward the central portion of the plated back conductor layer 8 is generated.

以上のような配線基板1の製造方法によれば、基板本体2における仮想の中間平面Fよりも表面3側に、平均粒径の大きなアルミナ粉末を含有する第1グリーンシートg1、およびその上面で50%以上を占めて形成した単一の内部導体層6、および枠形導体層14によって、焼成した際に、後工程のメッキ時に生じる圧縮応力の方向と、反対向きの反りが与えられていた。これに対し、その後に、基板本体2の表面3に位置する複数のパッド5、および裏面4に位置する単一の裏面導体層8の表面に、Niメッキ層11およびAuメッキ層12をそれぞれ形成したことで、上記反りが矯正ないし解消され且つ平坦度の高い基板本体2を有する配線基板1とすることが可能となった。
尚、配線基板1の前記製造方法は、前記第1グリーンシートg1および第2グリーンシートg21〜g23を、大版サイズのものとし、且つ前記各工程を行うことで、前記多数個取り基板20を製造することも可能である。
According to the manufacturing method of the wiring substrate 1 as described above, the first green sheet g1 containing alumina powder having a large average particle diameter on the surface 3 side of the virtual intermediate plane F in the substrate body 2 and the upper surface thereof. Due to the single inner conductor layer 6 and the frame-shaped conductor layer 14 formed to occupy 50% or more, when fired, the direction of the compressive stress generated during the subsequent plating and the warp in the opposite direction were given. . On the other hand, after that, a Ni plating layer 11 and an Au plating layer 12 are respectively formed on the surface of the plurality of pads 5 located on the front surface 3 of the substrate body 2 and the single back surface conductor layer 8 located on the back surface 4. As a result, the above-described warpage is corrected or eliminated, and the wiring substrate 1 having the substrate body 2 with high flatness can be obtained.
The manufacturing method of the wiring board 1 is such that the first green sheet g1 and the second green sheets g21 to g23 are large-sized and the above-described steps are performed so that the multi-piece substrate 20 is formed. It is also possible to manufacture.

図7は、前記配線基板1の変形形態の配線基板1aを示す垂直断面図である。
配線基板1aは、図7に示すように、前記同様の第1絶縁層s1および第2絶縁層s21〜s23からなり、表面3および裏面4を有する基板本体2と、表面3の周辺部に形成された複数のパッド5と、裏面4に形成された裏面導体層8と、第1絶縁層s1と第2絶縁層s21との間に形成された単一の内部導体層6と、を備えている。かかる配線基板1aが前記配線基板1と相違するのは、最上層の第2絶縁層s21の厚みが第1絶縁層s1や第2絶縁層s22,s23よりも薄肉であるため、基板本体2の厚み方向における表面3と裏面4との中間に位置する仮想の中間平面Fが、図7に示すように、第2絶縁層s22の内部で且つ第1絶縁層s1寄りに位置していることである。更に、基板本体2の表面3における外周辺に沿って、前記同様の枠形導体層14を形成したことである。
FIG. 7 is a vertical cross-sectional view showing a wiring board 1 a in a modified form of the wiring board 1.
As shown in FIG. 7, the wiring board 1 a is composed of the same first insulating layer s <b> 1 and second insulating layers s <b> 21 to s <b> 23 as described above, and is formed on the substrate body 2 having the front surface 3 and the back surface 4, and the peripheral portion of the front surface 3. A plurality of pads 5, a back conductor layer 8 formed on the back surface 4, and a single internal conductor layer 6 formed between the first insulating layer s 1 and the second insulating layer s 21. Yes. The wiring board 1a is different from the wiring board 1 because the uppermost second insulating layer s21 is thinner than the first insulating layer s1 and the second insulating layers s22 and s23. The virtual intermediate plane F located in the middle between the front surface 3 and the rear surface 4 in the thickness direction is located inside the second insulating layer s22 and closer to the first insulating layer s1, as shown in FIG. is there. Furthermore, the same frame-shaped conductor layer 14 as described above is formed along the outer periphery of the surface 3 of the substrate body 2.

以上のような配線基板1aによっても、基板本体2の焼成時に、前記中間平面Fから基板本体2の表面3側に位置する第1絶縁層s1、内部導体層6、および枠形導体層14による焼成収縮が、裏面4の裏面導体層8となるAg層10の焼成収縮よりも大きくなるため、表面3の中央部が裏面4側に下がるように基板本体2が反っている。しかし、その後で、裏面導体層8の表面にNiメッキ層11およびAuメッキ層12を被覆した際に、裏面4の中央部に向かって圧縮する求心的な応力により、上記反りが矯正ないし解消されている。従って、基板本体2およびその表・裏面3,4に反りがないか、極く僅かに抑制された配線基板1aとすることができる。   Even with the wiring substrate 1a as described above, when the substrate body 2 is baked, the first insulating layer s1, the inner conductor layer 6, and the frame-shaped conductor layer 14 located on the surface 3 side of the substrate body 2 from the intermediate plane F are used. Since the firing shrinkage is larger than the firing shrinkage of the Ag layer 10 that becomes the back conductor layer 8 of the back surface 4, the substrate body 2 is warped so that the central portion of the front surface 3 is lowered to the back surface 4 side. However, after that, when the Ni plating layer 11 and the Au plating layer 12 are coated on the surface of the back conductor layer 8, the warp is corrected or eliminated by centripetal stress that compresses toward the center of the back surface 4. ing. Therefore, it is possible to obtain a wiring substrate 1a in which the substrate body 2 and the front and back surfaces 3 and 4 thereof are not warped or are slightly suppressed.

図8は、前記配線基板1の応用形態の配線基板1bを示す垂直断面図である。
配線基板1bは、図8に示すように、上下一対の第1絶縁層s11,s12と、これらの間および上方に配置される比較的薄肉の第2絶縁層s21a,s21bと、比較的厚肉の第2絶縁層s22,s23とを積層し、表面3および裏面4を有する基板本体2を備えている。また、第1絶縁層s11,s12の上面(表面)には、これらの50%以上の面積を占める単一の内部導体層6a,6bが形成されている。このうち、第1絶縁層s11の表面で且つ内部導体層6aの周囲には、前記同様の枠形導体層14が形成され、且つ基板本体2の表面3における外周辺に沿った位置にも、別の枠形導体層14が形成されている。
更に、基板本体2の表面3には、前記同様の複数のパッド5が形成され、裏面4には、裏面導体層8が形成されている。尚、上記内部導体層6a,6bは、何れか一方のみを形成したり、上下2層の枠形導体層14も、何れか一方のみを形成した形態としても良い。
FIG. 8 is a vertical cross-sectional view showing a wiring board 1 b of an application form of the wiring board 1.
As shown in FIG. 8, the wiring board 1b includes a pair of upper and lower first insulating layers s11 and s12, relatively thin second insulating layers s21a and s21b disposed between and above them, and a relatively thick wall. The second insulating layers s22 and s23 are stacked, and a substrate body 2 having a front surface 3 and a back surface 4 is provided. In addition, on the upper surfaces (surfaces) of the first insulating layers s11 and s12, single internal conductor layers 6a and 6b occupying an area of 50% or more of these are formed. Among these, the same frame-shaped conductor layer 14 is formed on the surface of the first insulating layer s11 and around the inner conductor layer 6a, and also at a position along the outer periphery on the surface 3 of the substrate body 2. Another frame-shaped conductor layer 14 is formed.
Further, a plurality of pads 5 similar to those described above are formed on the front surface 3 of the substrate body 2, and a back conductor layer 8 is formed on the back surface 4. Note that only one of the inner conductor layers 6a and 6b may be formed, or only one of the upper and lower frame conductor layers 14 may be formed.

図8に示すように、裏面4側に位置する第2絶縁層s22,s23全体の厚みと、表面3側に位置する第2絶縁層s21a,s21bおよび第1絶縁層s11,s12全体の厚みとは、同じであるため、第1絶縁層s12と第2絶縁層s22との層間に、基板本体2の中心を含む仮想の中間平面Fが位置している。
以上のような配線基板1bによっても、基板本体2の焼成時に、前記中間平面Fから基板本体2の表面3側に位置する第1絶縁層s11,s12、内部導体層6a,6b、および上下2層の枠形導体層14による焼成収縮が、裏面4の裏面導体層8となるAg層10の焼成収縮よりも大きくなるため、中央部が裏面4側に下がるように基板本体2が反っている。しかし、その後、裏面4側の裏面導体層8の表面にNiメッキ層11およびAuメッキ層12を被覆した際に、その中央部に向かって圧縮する求心的な応力により、上記反りが矯正ないし解消されている。従って、基板本体2およびその表・裏面3,4に反りがないか、極く僅かに抑制された配線基板1bとすることができる。
As shown in FIG. 8, the entire thickness of the second insulating layers s22 and s23 located on the back surface 4 side, and the thickness of the second insulating layers s21a and s21b and the entire first insulating layers s11 and s12 located on the front surface 3 side Are the same, a virtual intermediate plane F including the center of the substrate body 2 is located between the first insulating layer s12 and the second insulating layer s22.
Even with the wiring substrate 1b as described above, the first insulating layers s11 and s12, the inner conductor layers 6a and 6b, and the upper and lower portions 2 located on the front surface 3 side of the substrate body 2 from the intermediate plane F when the substrate body 2 is baked. Since the firing shrinkage due to the frame-shaped conductor layer 14 of the layer is larger than the firing shrinkage of the Ag layer 10 which becomes the back conductor layer 8 of the back surface 4, the substrate body 2 is warped so that the center portion is lowered to the back surface 4 side. . However, when the Ni plating layer 11 and the Au plating layer 12 are subsequently coated on the surface of the back conductor layer 8 on the back surface 4 side, the warp is corrected or eliminated by centripetal stress that compresses toward the center portion. Has been. Therefore, it is possible to obtain a wiring substrate 1b in which the substrate body 2 and the front and back surfaces 3 and 4 thereof are not warped or are slightly suppressed.

本発明は、以上において説明した各形態に限定されるものではない。
例えば、前記第1絶縁層および第2絶縁層(他の絶縁層)は、アルミナ、ムライト、窒化アルミニウムなどのセラミック成分を主成分とするものとしても良い。
また、前記内部導体層6,6a,6bは、これらが形成される第1絶縁層の表面の55%〜90%の面積を占める形態としても良い。
更に、裏面導体層8は、基板本体2の裏面4の50%以上から100%の面積を占める形態としても良い。
また、前記基板本体2の表面3には、所定パターンを有する表面配線層(表面導体層)を形成しても良い。
加えて、前記配線基板1a,1bについても、これらを縦横に隣接して配置した製品領域paと、かかる領域の外周を囲み且つ前記第1・第2絶縁層からなる耳部mと、を備えた多数個取り基板の形態としても良い。
The present invention is not limited to the embodiments described above.
For example, the first insulating layer and the second insulating layer (other insulating layers) may be mainly composed of a ceramic component such as alumina, mullite, or aluminum nitride.
The inner conductor layers 6, 6a and 6b may occupy an area of 55% to 90% of the surface of the first insulating layer on which they are formed.
Further, the back conductor layer 8 may occupy an area of 50% to 100% of the back surface 4 of the substrate body 2.
A surface wiring layer (surface conductor layer) having a predetermined pattern may be formed on the surface 3 of the substrate body 2.
In addition, the wiring boards 1a and 1b also include a product region pa in which these are arranged vertically and horizontally, and an ear m that surrounds the outer periphery of the region and includes the first and second insulating layers. Alternatively, it may be in the form of a multi-piece substrate.

本発明による一形態の配線基板を示す垂直断面図。1 is a vertical sectional view showing a wiring board according to an embodiment of the present invention. 上記配線基板を複数個有する多数個取り基板の概略を示す断面図。Sectional drawing which shows the outline of the multi-piece board which has two or more said wiring boards. 上記配線基板の一製造工程を示す概略図。Schematic which shows one manufacturing process of the said wiring board. 図3に続く製造工程を示す概略図。Schematic which shows the manufacturing process following FIG. 図4に続く製造工程を示す概略図。Schematic which shows the manufacturing process following FIG. 図5に続く製造工程を示す概略図。Schematic which shows the manufacturing process following FIG. 上記配線基板の変形形態である配線基板を示す垂直断面図。The vertical sectional view which shows the wiring board which is a modification of the said wiring board. 上記配線基板の応用形態である配線基板を示す垂直断面図。The vertical sectional view which shows the wiring board which is an application form of the said wiring board.

符号の説明Explanation of symbols

1,1a,1b…………配線基板
2…………………………基板本体
3…………………………表面
4…………………………裏面
5…………………………パッド(表面導体層)
6,6a,6b…………内部導体層
8…………………………裏面導体層
11………………………Niメッキ層(金属メッキ層)
12………………………Auメッキ層(金属メッキ層)
14………………………枠形導体層
16………………………外側枠形導体層
20………………………多数個取り基板
s1,s11,s12…第1絶縁層
s21〜s23…………第2絶縁層(他の絶縁層)
pa………………………製品領域
m…………………………耳部
1,1a, 1b ………… Wiring board 2 ………………………… Board body 3 ………………………… Front side 4 ………………………… Back side 5… ……………………… Pad (surface conductor layer)
6, 6a, 6b ………… Inner conductor layer 8 ………………………… Back conductor layer 11 …………………… Ni plating layer (metal plating layer)
12 ………………………… Au plating layer (metal plating layer)
14 ……………………… Frame-shaped conductor layer 16 ……………………… Outer frame-shaped conductor layer 20 ……………………… Multiple substrate s1, s11, s12… No. 1 insulating layer s21 to s23 ............ 2nd insulating layer (other insulating layers)
pa ……………………… Product area m ………………………… Ear

Claims (5)

セラミックを含む複数の絶縁層を積層してなり、表面および裏面を有する基板本体と、
上記基板本体の厚み方向における表面と裏面との中間に位置する仮想の平面を中間平面としたときに、当該中間平面から基板本体の表面側に位置し、且つ含有するセラミックの平均粒径が他の絶縁層よりも大きな第1絶縁層と、
上記中間平面から基板本体の表面側に位置し、且つ上記第1絶縁層と他の絶縁層との間に形成され、平面視で第1絶縁層の表面における面積の50%以上を占める単一の内部導体層と、
上記基板本体の裏面に形成され、かかる裏面の面積の50%以上を占める単一の裏面導体層と、
上記裏面導体層の表面に形成された金属メッキ層と、
上記基板本体の表面に形成され、且つ表面に金属メッキ層が形成されており、上記裏面導体層よりも小さな複数の表面導体層と、を含む、
ことを特徴とする配線基板。
A plurality of insulating layers including ceramic, and a substrate body having a front surface and a back surface;
When an imaginary plane located between the front surface and the back surface in the thickness direction of the substrate body is defined as an intermediate plane, the average particle size of the ceramics located on the surface side of the substrate body from the intermediate plane is different. A first insulating layer larger than the insulating layer of
A single unit located on the surface side of the substrate body from the intermediate plane and formed between the first insulating layer and the other insulating layer and occupies 50% or more of the area of the surface of the first insulating layer in plan view. An inner conductor layer of
A single backside conductor layer formed on the backside of the substrate body and occupying 50% or more of the area of the backside;
A metal plating layer formed on the surface of the back conductor layer;
Formed on the surface of the substrate body, and a metal plating layer is formed on the surface, and includes a plurality of surface conductor layers smaller than the back conductor layer,
A wiring board characterized by that.
前記基板本体の表面あるいは第1絶縁層の表面における外周辺に沿って、平面視が矩形を呈する枠形導体層が形成されている、
ことを特徴とする請求項1に記載の配線基板。
A frame-shaped conductor layer having a rectangular shape in plan view is formed along the outer periphery of the surface of the substrate body or the surface of the first insulating layer.
The wiring board according to claim 1.
請求項1または2に記載の複数の前記配線基板を縦横に隣接して配置した製品領域と、
少なくとも上記製品領域の外周における何れか一辺に沿って位置し、セラミックを含む複数の前記絶縁層からなる耳部と、を備えている、
ことを特徴とする多数個取り基板。
A product region in which the plurality of wiring boards according to claim 1 or 2 are arranged adjacent to each other vertically and horizontally,
At least along one side of the outer periphery of the product region, and provided with ears made of a plurality of the insulating layers containing ceramic,
A multi-piece substrate characterized by that.
前記耳部には、前記製品領域の外周を囲む四辺に沿って位置し、かかる耳部における表面または前記第1絶縁層の表面に平面視が矩形を呈する外側枠形導体層が形成されている、
ことを特徴とする請求項3に記載の多数個取り基板。
An outer frame-shaped conductor layer that is positioned along the four sides that surround the outer periphery of the product region and has a rectangular shape in plan view is formed on the surface of the ear portion or the surface of the first insulating layer. ,
The multi-piece substrate according to claim 3, wherein
前記製品領域に配置された配線基板ごとの基板本体の表面あるいは第1絶縁層の表面における外周辺に沿って、それぞれ平面視が矩形を呈する枠形導体層が形成されている、
ことを特徴とする請求項3または4に記載の多数個取り基板。
A frame-shaped conductor layer having a rectangular shape in plan view is formed along the outer periphery of the surface of the substrate body or the surface of the first insulating layer for each wiring substrate disposed in the product region,
The multi-piece substrate according to claim 3 or 4, wherein the multi-piece substrate is provided.
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