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JP4423892B2 - Manufacturing method of electronic parts - Google Patents
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JP4423892B2 - Manufacturing method of electronic parts - Google Patents

Manufacturing method of electronic parts Download PDF

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Publication number
JP4423892B2
JP4423892B2 JP2003193795A JP2003193795A JP4423892B2 JP 4423892 B2 JP4423892 B2 JP 4423892B2 JP 2003193795 A JP2003193795 A JP 2003193795A JP 2003193795 A JP2003193795 A JP 2003193795A JP 4423892 B2 JP4423892 B2 JP 4423892B2
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element body
conductive paste
paste film
face
electronic component
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JP2005032832A (en
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大昌 片山
明 溝井
健一 青木
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Murata Manufacturing Co Ltd
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Murata Manufacturing Co Ltd
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Description

【0001】
【発明の属する技術分野】
本発明は、電子部品の製造方法、特に、回路素子を内蔵したセラミック製の素体の端部に外部電極を備えた電子部品の製造方法に関する。
【0002】
【従来の技術】
【特許文献1】
特開2001−60530号公報
【0003】
回路素子を内蔵したセラミック製の素体の両端部に外部電極を形成する方法としては、ベース盤上に所定の厚さで均一に塗布した導電性ペースト膜に素体の端部を浸漬して引き上げ、該端部に導電性ペーストを付着させた後、乾燥及び焼付ける方法が知られている。
【0004】
図9は、電子部品素体の端部を導電性ペースト膜に浸漬する際の、従来の浸漬プロファイルを示すグラフである。縦軸は導電性ペースト膜の表面から素体の下側端面までの距離を示し、横軸は経過時間を示している。
【0005】
図9に示すように、従来は、素体を下降速度V1(例えば、10mm/s)で導電性ペーストに浸漬し、下死点H0に到達すると一定時間(T秒間、例えば、3秒間)停止させた後、上昇速度V3(例えば、1mm/s)で比較的ゆっくりと引き上げ、素体の端面が導電性ペースト膜から完全に離れた時点で速度V4(例えば、10mm/s)に切り換えて速く上昇させていた。
【0006】
ところで、図9に示す従来の浸漬プロファイルにて形成される外部電極2は、図10に示すように、素体1の表面に沿って弧を描くように緩やかに中央部に広がる形状(以下、三日月形状と記す)になることがあった。
【0007】
このように、外部電極2と素体1との境界部分が三日月形状になる理由として、主に以下の二つが考えられる。
【0008】
(1)素体1を導電性ペースト膜に浸漬した後、下死点H0で一定時間保持している間に、表面張力で導電性ペースト膜の表面が素体1の表面に沿って三日月形状に濡れ上がる。
【0009】
(2)素体1を導電性ペースト膜から引き上げた後、素体1の端部に付着した導電性ペーストが自身の持つ表面張力で球状になろうとするため、導電性ペーストが素体1の表面に沿って三日月形状に濡れ上がる。この現象は、素体1の端部に付着した導電性ペーストの量が多いほど顕著である。
【0010】
前述した外部電極2の三日月形状は、外部電極2間の寸法Aをばらつかせ、耐電圧の低下やリフローはんだ付けによる外部電極2間の短絡不良やプリント基板に対する接着不良を生じることから信頼性の低下を招いている。ちなみに、図10において、Lは外部電極2の折り返し寸法、Dは三日月量である。
【0011】
そこで、この対策として、特許文献1には、導電性ペーストを素体の端部に塗布する前に、素体に対してその表面を疎にする温度で予熱乾燥処理を施し、素体表面の残留溶剤や付着水分を除去する方法が記載されている。この予熱乾燥処理の後、保温状態のままで導電性ペーストを塗布することで、素体と導電性ペーストとの境界部分を直線形状にすることができる。
【0012】
【発明が解決しようとする課題】
しかしながら、特許文献1に記載の方法では、素体の予熱乾燥温度が100℃程度と高温であるため、導電性ペースト膜に浸漬している間に、素体の端部に付与されている導電性ペーストの乾燥が進行してしまう。このため、素体と導電性ペーストとの境界部分に発生する三日月形状は抑制されるが、素体の端面や周面に付着する導電性ペーストの量が多くなる。この結果、外部電極は外側に膨らんだ丸みを帯びた形状になり、リフローはんだ付け時に不具合が発生しやすくなる。
【0013】
また、図9に示した浸漬プロファイルを改善して、浸漬時間を極力短くすることが考えられる。しかし、近年では、素体1のサイズが小さくなるに伴って外部電極2の折り返し寸法Lが小さくなり、浸漬プロファイルの改善だけでは三日月量Dの抑制が困難になっている。
【0014】
そこで、本発明の目的は、小さなサイズの素体であっても、該素体と外部電極との境界部分に発生する外部電極の三日月形状を効果的に抑制できる電子部品の製造方法を提供することにある。
【0015】
【課題を解決するための手段及び作用】
以上の目的を達成するため、本発明に係る電子部品の製造方法は、電子部品の素体を下降させて該素体の端面部分を所定の基準面までの厚みを保持する導電性ペースト膜に浸漬する工程と、前記素体を上昇させて前記端面部分を前記導電性ペースト膜から引き上げ、該端面部分に導電性ペーストを付与する工程と、前記素体の端面部分が前記導電性ペースト膜に浸漬した後から該端面部分が導電性ペースト膜の表面から引き上げられるまでに、該導電性ペースト膜の前記基準面を低下させる工程と、を備え、前記素体の端面が下死点まで下降した時点、前記素体の端面部分が前記導電性ペースト膜に浸漬されている状態で該素体の上昇を一旦停止させた時点、又は、前記素体の端面が下死点まで下降したときに該素体を一旦停止させた時点、のいずれかで前記導電性ペースト膜の前記基準面を低下させること、を特徴とする。
【0016】
本発明に係る電子部品の製造方法においては、素体の端面部分が導電性ペースト膜に浸漬した後から該端面部分が導電性ペースト膜の表面から引き上げられるまでに、該導電性ペースト膜の基準面を低下させるため、基準面を低下させる力が素体の端面部分に付着した導電性ペーストの濡れ上がり力とは反対方向に作用し、三日月形状が小さくなる。
【0017】
即ち、浸漬によって素体の端面部分に付着した導電性ペーストが三日月形状に濡れ上がるのを防止するには、素体に付着した導電性ペーストの濡れ上がり力を、素体に付着した導電性ペーストの自重に導電性ペースト膜からの引っ張り力を加えた力よりも小さくなるようにすればよい。本発明に係る製造方法では、さらに、導電性ペースト膜の基準面を低下させるための力が作用し、導電性ペーストの濡れ上がりがより一層抑制される。
【0018】
前記導電性ペースト膜の基準面を低下させる工程は、導電性ペースト膜の下面側に設けた吸引手段にて行うことができる
【0019】
吸引手段にて導電性ペースト膜を吸引する場合、導電性ペースト膜は、多数の吸引孔を有するベース盤上に所定の厚みとなるように形成され、該吸引孔から吸引されることにより前記基準面が低下することが好ましい。ベース盤上において導電性ペースト膜を所定の厚みに形成するには、吸引孔からベース盤上に押し出した導電性ペーストをスキージでならせばよい。
【0020】
導電性ペースト膜の吸引を効率的に行うために、吸引孔はベース盤に均一に分布しており、素体の端面に対して複数の吸引孔が対向することが好ましい。また、吸引孔は素体の端面の周縁部に対向することが好ましい。
【0021】
本発明に係る製造方法において、素体の端面はベース盤の表面まで下降させることが好ましい。素体の浸漬深さは、素体自体の寸法誤差、素体を保持するホルダの誤差や取り付け誤差によってばらつく。素体の端面をベース盤の表面まで下降させれば、この種の誤差に拘わりなく、素体の浸漬深さを一定とすることができる。
【0022】
また、素体を導電性ペースト膜に浸浸させた後上昇させる態様は、素体の端面が下死点まで下降した直後であってもよく、あるいは、素体の端面が下死点まで下降した直後に該素体を第1の速度で上昇させ、端面が導電性ペースト膜の基準面に上昇するまでに該素体の上昇を一旦停止させ、その後、該素体を第2の速度で上昇させてもよい。あるいは、素体の端面が下死点まで下降した直後に該素体を第1の速度で上昇させ、端面が導電性ペースト膜の基準面を超えるまで該素体を第2の速度で上昇させ、その後、該素体を第3の速度で上昇させてもよい。前記第1の速度は前記第2の速度よりも速いことが好ましい。
【0023】
導電性ペースト膜の吸引を開始するタイミングは、素体の端面が下死点まで下降した時点であってもよく、あるいは、素体の上昇を一旦停止させた時点であってもよい。また、素体の端面が下死点まで下降した時点で該素体を一旦停止させると共に、導電性ペースト膜の吸引を開始するようにしてもよい。
【0024】
【発明の実施の形態】
以下、本発明に係る電子部品の製造方法の実施形態について、添付図面を参照して説明する。
【0025】
(外部電極形成工程、図1参照)
図1(A)〜(D)は、セラミック電子部品の素体1の端面部分1aに外部電極2を形成する工程の一例を示す。セラミック電子部品としては、積層セラミックコンデンサ、抵抗器インダクタ、積層セラミックLCフィルタ、サーミスタなどがある。そして、この工程では吸引孔11を備えたベース盤10を使用する。吸引孔11は所定の直径(例えば、0.1〜0.2mm)を有し、所定のピッチ(例えば、0.2〜0.3mm)で形成されている。
【0026】
まず、図1(A)に示すように、ベース盤10上に導電性ペースト膜22を吸引孔11から押し出し、ペースト膜2の表面を所定の厚みhとなるようにスキージ5を水平方向に移動させてならす。所定の厚みhは、外部電極2の折り返し寸法L(図1(D)参照)に対応して設定される。導電性ペースト膜22は、Ag、Ag−Pd、Cuなどの導電性金属を主成分とし、ガラスフリット、樹脂バインダ及び溶剤などを加えたものである。
【0027】
次に、ホルダ6にて保持した素体1を下降させてその端面をベース盤10の表面まで下降させ、導電性ペースト膜22に浸漬する(図1(B)参照)。ここで、素体1の端面部分1aに導電性ペーストが付着する。
【0028】
次に、素体1の上昇を開始させると共に、吸引孔11から導電性ペースト膜22を吸引する。これにて、ベース盤10上から導電性ペースト膜22が排除される(図1(C))。素体1の端面部分1aがベース盤10の表面から十分に離れると、吸引孔11からベース盤10上に再度導電性ペースト膜22を押し出し(図1(D)参照)、次の素体に対する外部電極の形成に備える。
【0029】
以上説明した外部電極の形成工程によると、素体1の端面部分1aが導電性ペースト膜22に浸漬した後に、該導電性ペースト膜22をベース盤10上から吸引するため、吸引力が素体1の端面部分1aに付着した導電性ペーストの濡れ上がり力とは反対方向に作用し、三日月形状が小さくなる。
【0030】
即ち、浸漬によって素体1の端面部分に付着した導電性ペーストが三日月形状に濡れ上がるのを防止するには、図1(C)に示すように、素体1に付着した導電性ペーストの濡れ上がり力F1を、素体1に付着した導電性ペーストの自重に導電性ペースト膜22からの引っ張り力F2を加えた力よりも小さくなるようにすればよく、本工程では、さらに、導電性ペースト膜22を吸引するための力F3が作用し、導電性ペーストの濡れ上がりがより一層抑制される。
【0031】
なお、素体1の浸漬プロファイル及び導電性ペースト膜22を吸引するタイミングは以下に図2〜図5を参照して説明する種々の態様があり、それ以外の態様であってもよい。また、素体1の下死点はベース盤10の表面ではなく、該表面から若干離れた位置であってもよい。但し、素体1の端面はベース盤10の表面まで下降させることが好ましい。素体1の浸漬深さは、素体1自体の寸法誤差、素体を保持するホルダ6の誤差や取り付け誤差によってばらつく。素体1の端面をベース盤10の表面まで下降させれば、この種の誤差に拘わりなく、素体1の浸漬深さを一定とすることができるからである。
【0032】
(浸漬プロファイル及び吸引タイミング、図2〜図5参照)
ここで、素体1の浸漬プロファイル及び導電性ペースト膜の吸引タイミングに関して、第1例〜第4例を説明する。
【0033】
第1例は、図2に示すように、まず、導電性ペースト膜22の表面を所定の高さhとなるようにスキージした後、素体1を速度V1(例えば、10〜30mm/s)で下降させる。この高さhを基準面H1とする。素体1の端面がベース盤10の表面に到達した時点で直ちに素体1を第1の速度V2(例えば、1〜25mm/s)で上昇させると共に、導電性ペースト膜22の吸引を開始する。
【0034】
そして、素体1の端面が基準面H1に上昇するまでに素体1の上昇を一旦停止(例えば、10秒以内、好ましくは5秒以内)させる。その後、素体1を第2の速度V3(例えば、0.05〜1mm/s)で上昇させ、素体1の端面が基準面H1から完全に離れると第3の速度V4(例えば、10〜30mm/s)で上昇させる。第1の速度V2は第2の速度V3よりも速い。
【0035】
第2例は、図3に示すように、素体1の浸漬プロファイルは前記第1例と同様である。異なるのは、導電性ペースト膜22の吸引を開始するタイミングを素体1の上昇を一旦停止させる時点に設定した点である。
【0036】
第3例は、図4に示すように、まず、導電性ペースト膜22の表面を所定の高さhとなるようにスキージした後、素体1を速度V1(例えば、10〜30mm/s)で下降させる。素体1の端面がベース盤10の表面に到達した時点で直ちに素体1を第1の速度V2(例えば、1〜25mm/s)で上昇させると共に、導電性ペースト膜22の吸引を開始する。
【0037】
そして、素体1の端面が導電性ペースト膜22の基準面H1を超えるまで素体1を第2の速度V3(例えば、0.05〜1mm/s)で上昇させ、その後、素体1の端面が基準面H1から完全に離れると第3の速度V4(例えば、10〜30mm/s)で上昇させる。第1の速度V2は第2の速度V3よりも速い。
【0038】
第4例は、図5に示すように、まず、導電性ペースト膜22の表面を所定の高さhとなるようにスキージした後、素体1を速度V1(例えば、10〜30mm/s)で下降させる。素体1の端面がベース盤10の表面に到達した時点で素体1を一旦停止(T秒間、例えば、1秒以内)させると共に、導電性ペースト膜22の吸引を開始する。その後、素体1を第2の速度V3(例えば、0.05〜1mm/s)で上昇させ、素体1の端面が基準面H1に到達した時点から第3の速度V4(例えば、10〜30mm/s)で上昇させる。
【0039】
第4例においては、下死点保持時間Tを設けたために、三日月形状の抑制効果は前記第1〜第3例よりも少し劣る。しかし、素体1の端面をベース盤10の表面に接触させた状態で導電性ペースト膜22を吸引し、吸引完了後に素体1を上昇させることにより、素体1の下死点のばらつきに起因する三日月量のばらつきが小さくなる。
【0040】
以上の第1例〜第4例において、導電性ペースト膜22の吸引を開始するタイミングは、素体1が下死点に到達した後で、素体1の端面が導電性ペースト膜22と接触している間であれば任意の時点でよい。また、次の素体に導電性ペーストを付与するために、ベース盤10上に導電性ペースト膜22を押し出すタイミングは、既に導電性ペーストが付与された素体1の端面に押し出された導電性ペースト膜22が付着しないように設定する必要がある。
【0041】
(実験結果)
素体1のサイズが、長さ0.4mm、幅0.2mm、高さ0.2mmの積層コンデンサに前記第1例〜第4例にて外部電極を形成した。外部電極2の折り返し寸法Lは0.09mmである。導電性ペースト膜22は、Cuを主成分とした粘度20Pa・s(E型、1rpm)のものを使用し、膜厚hは50〜70μmとした。
【0042】
なお、図9に示した従来の浸漬プロファイルでは三日月量Dの平均値は31μmであった。これに対して、第1〜第4例での三日月量Dの平均値は17μmであった。
【0043】
(塗布装置の構成、図6及び図7参照)
塗布装置は、多数の吸引孔11を有するベース盤10の下面側に空間12を介してラバーシート13を設け、この空間12に導電性ペーストを充填し、ラバーシート13を押出しピン14で昇降させるように構成されている。押出しピン14はベース板15に設置されており、該ベース板15の昇降に伴って一体的に昇降する。
【0044】
押出しピン14の上昇に伴ってラバーシート13が上昇すると、空間12に充填されている導電性ペーストが吸引孔11を通じてベース盤10の表面に押し出される。また、押出しピン14の下降に伴ってラバーシート13が下降すると、ベース盤10上の導電性ペーストが吸引孔11を通じて空間12に引き込まれる。
【0045】
素体1の端面部分1aが導電性ペースト膜22に浸漬されている状態は図7(A)に示すとおりである。この塗布装置において、導電性ペースト膜22の吸引を効率的に行うために、吸引孔11はベース盤10に均一に分布している(図7(B)参照)。吸引孔11の直径やピッチは、素体1の端面に対して複数の吸引孔11が対向するように設定することが好ましい。また、吸引孔11は素体1の端面の周縁部に対向することが好ましい。
【0046】
(他の実施形態)
なお、本発明に係る電子部品の製造方法は前記実施形態に限定するものではなく、その要旨の範囲内で種々に変更できる。
【0047】
特に、導電性ペースト膜22の厚みを薄くする工程は、導電性ペースト膜22に対してエアを吹き付ける手段にて行うことができる。即ち、図8に示すように、素体1を導電性ペースト膜22に浸浸させた後、ノズル25からエアを吹き付け、端面部分1a周辺の導電性ペースト膜22の厚みを薄くしてもよい。
【0048】
【発明の効果】
以上の説明で明らかなように、本発明によれば、素体の端面部分を浸漬する導電性ペースト膜の基準面を低下させる力が素体の端面部分に付着した導電性ペーストに対して濡れ上がりを抑止する方向に作用するため、形成された外部電極の三日月形状が小さくなる。
【図面の簡単な説明】
【図1】本発明に係る電子部品の製造方法における外部電極形成工程を示す説明図である。
【図2】外部電極形成工程における浸漬プロファイル及び吸引タイミングの第1例を示すグラフである。
【図3】外部電極形成工程における浸漬プロファイル及び吸引タイミングの第2例を示すグラフである。
【図4】外部電極形成工程における浸漬プロファイル及び吸引タイミングの第3例を示すグラフである。
【図5】外部電極形成工程における浸漬プロファイル及び吸引タイミングの第4例を示すグラフである。
【図6】本発明に係る製造方法に使用される塗布装置の概略を示す断面図である。
【図7】(A)は前記塗布装置の要部を模式的に示す断面図、(B)は吸引孔と素体との位置関係を示す平面図である。
【図8】導電性ペースト膜の厚みを薄くするために該ペースト膜にエアを吹き付ける状態を示す説明図である。
【図9】従来の浸漬プロファイルを示すグラフである。
【図10】従来の浸漬プロファイルによって形成された外部電極を示す正面図である。
【符号の説明】
1…素体
1a…端面部分
2…外部電極
10…ベース盤
11…吸引孔
22…導電性ペースト膜
25…エア吹き付け用ノズル
H1…基準面
h…導電性ペースト膜の厚み
[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a method for manufacturing an electronic component, and more particularly, to a method for manufacturing an electronic component including an external electrode at an end of a ceramic body containing a circuit element.
[0002]
[Prior art]
[Patent Document 1]
Japanese Patent Laid-Open No. 2001-60530
As a method of forming external electrodes on both ends of a ceramic body containing circuit elements, the end of the body is immersed in a conductive paste film uniformly applied to a predetermined thickness on a base board. A method is known in which the conductive paste is pulled up and attached to the end, followed by drying and baking.
[0004]
FIG. 9 is a graph showing a conventional immersion profile when the end of the electronic component body is immersed in the conductive paste film. The vertical axis indicates the distance from the surface of the conductive paste film to the lower end face of the element body, and the horizontal axis indicates the elapsed time.
[0005]
As shown in FIG. 9, conventionally, the element body is immersed in a conductive paste at a descending speed V1 (for example, 10 mm / s), and stops for a certain time (for example, T seconds, for example, 3 seconds) when reaching the bottom dead center H0. After that, the substrate is pulled up relatively slowly at a rising speed V3 (for example, 1 mm / s), and when the end face of the element body is completely separated from the conductive paste film, the speed is switched to the speed V4 (for example, 10 mm / s) to increase the speed. It was raised.
[0006]
By the way, the external electrode 2 formed by the conventional immersion profile shown in FIG. 9 has a shape (hereinafter referred to as the following) that gently spreads in the center so as to draw an arc along the surface of the element body 1 as shown in FIG. It was sometimes referred to as a crescent moon shape).
[0007]
As described above, there are mainly two reasons why the boundary portion between the external electrode 2 and the element body 1 has a crescent shape.
[0008]
(1) After the element body 1 is immersed in the conductive paste film, the surface of the conductive paste film is crescent shaped along the surface of the element body 1 by the surface tension while being held at the bottom dead center H0 for a certain period of time. Get wet.
[0009]
(2) After the element body 1 is pulled up from the conductive paste film, the conductive paste attached to the end of the element body 1 tends to become spherical due to its own surface tension. A crescent shape rises along the surface. This phenomenon becomes more prominent as the amount of conductive paste attached to the end of the element body 1 increases.
[0010]
The above-mentioned crescent shape of the external electrode 2 varies the dimension A between the external electrodes 2 and causes a short circuit failure between the external electrodes 2 due to a decrease in withstand voltage, reflow soldering, and poor adhesion to the printed circuit board. Has led to a decline. Incidentally, in FIG. 10, L is the folded dimension of the external electrode 2, and D is the crescent amount.
[0011]
Therefore, as a countermeasure against this, in Patent Document 1, before applying the conductive paste to the end of the element body, a preheating drying process is performed at a temperature that makes the surface of the element body sparse, A method for removing residual solvent and adhering moisture is described. After this preheating and drying treatment, the boundary portion between the element body and the conductive paste can be made linear by applying the conductive paste while keeping the temperature maintained.
[0012]
[Problems to be solved by the invention]
However, in the method described in Patent Document 1, since the preheating drying temperature of the element body is as high as about 100 ° C., the conductivity applied to the end of the element body while being immersed in the conductive paste film. Drying of the adhesive paste proceeds. For this reason, although the crescent moon shape generated at the boundary portion between the element body and the conductive paste is suppressed, the amount of the conductive paste adhering to the end face and the peripheral surface of the element body increases. As a result, the external electrode has a rounded shape that bulges outward, and problems are likely to occur during reflow soldering.
[0013]
Further, it is conceivable to improve the immersion profile shown in FIG. 9 and shorten the immersion time as much as possible. However, in recent years, as the size of the element body 1 is reduced, the folded dimension L of the external electrode 2 is reduced, and it is difficult to suppress the crescent amount D only by improving the immersion profile.
[0014]
Accordingly, an object of the present invention is to provide a method of manufacturing an electronic component that can effectively suppress the crescent shape of the external electrode generated at the boundary portion between the element body and the external electrode, even if the element body has a small size. There is.
[0015]
[Means and Actions for Solving the Problems]
In order to achieve the above object, a method of manufacturing an electronic component according to the present invention provides a conductive paste film that lowers an element body of an electronic component and maintains an end surface portion of the element body to a predetermined reference surface. A step of immersing, a step of raising the element body and pulling up the end face portion from the conductive paste film, and applying a conductive paste to the end face portion; and an end face portion of the element body on the conductive paste film A step of lowering the reference surface of the conductive paste film until the end surface portion is pulled up from the surface of the conductive paste film after the immersion, and the end surface of the element body is lowered to the bottom dead center. At the time, when the rising of the element is temporarily stopped while the end face portion of the element is immersed in the conductive paste film, or when the end face of the element is lowered to the bottom dead center. Once the element is stopped, Reducing the reference surface of the conductive paste films either, it characterized.
[0016]
In the method for manufacturing an electronic component according to the present invention, after the end face portion of the element body is immersed in the conductive paste film, the end face portion is lifted from the surface of the conductive paste film, and the reference of the conductive paste film is obtained. In order to lower the surface, the force to lower the reference surface acts in the direction opposite to the wetting force of the conductive paste attached to the end face portion of the element body, and the crescent moon shape becomes smaller.
[0017]
That is, in order to prevent the conductive paste adhering to the end face portion of the element body from getting wet into a crescent shape, the conductive paste adhering to the element body is applied with the wetting force of the conductive paste adhering to the element body. It is sufficient to make it smaller than the force obtained by adding the tensile force from the conductive paste film to its own weight. In the manufacturing method according to the present invention, a force for reducing the reference surface of the conductive paste film is further applied, and the wetting of the conductive paste is further suppressed.
[0018]
Step to reduce the reference surface of the conductive paste films as possible out to perform by suction means provided on the lower surface of the conductive paste films.
[0019]
When the conductive paste film is sucked by the suction means, the conductive paste film is formed on the base board having a large number of suction holes so as to have a predetermined thickness, and is sucked from the suction holes so that the reference It is preferable that the surface is lowered . In order to form the conductive paste film with a predetermined thickness on the base board, the conductive paste extruded from the suction hole onto the base board may be formed with a squeegee.
[0020]
In order to efficiently suck the conductive paste film, the suction holes are uniformly distributed on the base board, and it is preferable that the plurality of suction holes face the end face of the element body. Moreover, it is preferable that a suction hole opposes the peripheral part of the end surface of an element | base_body.
[0021]
In the manufacturing method according to the present invention, the end surface of the element body is preferably lowered to the surface of the base board. The immersion depth of the element body varies depending on the dimensional error of the element itself, the error of the holder holding the element body, and the mounting error. If the end face of the element body is lowered to the surface of the base board, the immersion depth of the element body can be made constant regardless of this kind of error.
[0022]
Also, the element body may be lifted after being immersed in the conductive paste film immediately after the end face of the element body is lowered to the bottom dead center, or the end face of the element body is lowered to the bottom dead center. Immediately after, the element is raised at a first speed, and the rising of the element is temporarily stopped until the end face rises to the reference surface of the conductive paste film, and then the element is moved at a second speed. It may be raised. Alternatively, immediately after the end face of the element body is lowered to the bottom dead center, the element body is raised at the first speed, and the element body is raised at the second speed until the end face exceeds the reference plane of the conductive paste film. Thereafter, the element body may be raised at a third speed. The first speed is preferably higher than the second speed.
[0023]
The timing of starting the suction of the conductive paste film may be when the end face of the element body is lowered to the bottom dead center, or may be when the ascent of the element body is once stopped. Further, when the end face of the element body is lowered to the bottom dead center, the element body may be temporarily stopped and suction of the conductive paste film may be started.
[0024]
DETAILED DESCRIPTION OF THE INVENTION
Embodiments of an electronic component manufacturing method according to the present invention will be described below with reference to the accompanying drawings.
[0025]
(External electrode formation process, see FIG. 1)
1A to 1D show an example of a process for forming an external electrode 2 on an end face portion 1a of an element body 1 of a ceramic electronic component. Examples of the ceramic electronic component include a multilayer ceramic capacitor, a resistor inductor, a multilayer ceramic LC filter, and a thermistor. In this step, the base board 10 provided with the suction holes 11 is used. The suction holes 11 have a predetermined diameter (for example, 0.1 to 0.2 mm) and are formed at a predetermined pitch (for example, 0.2 to 0.3 mm).
[0026]
First, as shown in FIG. 1A, the conductive paste film 22 is pushed out from the suction hole 11 onto the base board 10, and the squeegee 5 is moved in the horizontal direction so that the surface of the paste film 2 has a predetermined thickness h. Let me know. The predetermined thickness h is set corresponding to the folding dimension L of the external electrode 2 (see FIG. 1D). The conductive paste film 22 includes a conductive metal such as Ag, Ag—Pd, or Cu as a main component and a glass frit, a resin binder, a solvent, and the like.
[0027]
Next, the element body 1 held by the holder 6 is lowered and its end face is lowered to the surface of the base board 10 and immersed in the conductive paste film 22 (see FIG. 1B). Here, the conductive paste adheres to the end face portion 1 a of the element body 1.
[0028]
Next, the element body 1 starts to rise, and the conductive paste film 22 is sucked from the suction hole 11. Thus, the conductive paste film 22 is removed from the base board 10 (FIG. 1C). When the end face portion 1a of the element body 1 is sufficiently separated from the surface of the base board 10, the conductive paste film 22 is again pushed out from the suction hole 11 onto the base board 10 (see FIG. 1D), and the next element body is applied. Prepare for the formation of external electrodes.
[0029]
According to the external electrode forming process described above, since the conductive paste film 22 is sucked from the base board 10 after the end surface portion 1a of the base body 1 is immersed in the conductive paste film 22, the suction force is generated. 1 acts in a direction opposite to the wetting force of the conductive paste adhered to the end face portion 1a, and the crescent shape is reduced.
[0030]
That is, in order to prevent the conductive paste adhering to the end face portion of the element body 1 from being wetted into a crescent shape, the wetting of the conductive paste adhering to the element body 1 as shown in FIG. The rising force F1 may be made smaller than the force obtained by adding the tensile force F2 from the conductive paste film 22 to the self-weight of the conductive paste attached to the element body 1. In this step, the conductive paste is further reduced. A force F3 for sucking the film 22 acts, and the wetting of the conductive paste is further suppressed.
[0031]
Note that the immersion profile of the element body 1 and the timing of sucking the conductive paste film 22 have various modes described below with reference to FIGS. 2 to 5, and may be other modes. Further, the bottom dead center of the element body 1 is not the surface of the base board 10 but may be a position slightly away from the surface. However, the end face of the element body 1 is preferably lowered to the surface of the base board 10. The immersion depth of the element body 1 varies depending on the dimensional error of the element body 1 itself, the error of the holder 6 that holds the element body, and the mounting error. This is because if the end face of the element body 1 is lowered to the surface of the base board 10, the immersion depth of the element body 1 can be made constant regardless of this type of error.
[0032]
(Immersion profile and suction timing, see FIGS. 2 to 5)
Here, the first to fourth examples will be described with respect to the immersion profile of the element body 1 and the suction timing of the conductive paste film.
[0033]
In the first example, as shown in FIG. 2, first, the surface of the conductive paste film 22 is squeezed so as to have a predetermined height h, and then the element body 1 is moved to a speed V1 (for example, 10 to 30 mm / s). To lower. This height h is defined as a reference plane H1. As soon as the end face of the base body 1 reaches the surface of the base board 10, the base body 1 is immediately raised at a first speed V2 (for example, 1 to 25 mm / s) and suction of the conductive paste film 22 is started. .
[0034]
Then, the rising of the element body 1 is temporarily stopped (for example, within 10 seconds, preferably within 5 seconds) until the end face of the element body 1 rises to the reference plane H1. Thereafter, the element body 1 is raised at a second speed V3 (for example, 0.05 to 1 mm / s). When the end surface of the element body 1 is completely separated from the reference plane H1, the third speed V4 (for example, 10 to 10 mm) is obtained. 30 mm / s). The first speed V2 is faster than the second speed V3.
[0035]
In the second example, as shown in FIG. 3, the immersion profile of the element body 1 is the same as that of the first example. The difference is that the timing at which the suction of the conductive paste film 22 is started is set at a point where the rise of the element body 1 is temporarily stopped.
[0036]
In the third example, as shown in FIG. 4, first, the surface of the conductive paste film 22 is squeezed so as to have a predetermined height h, and then the element body 1 is moved to a speed V1 (for example, 10 to 30 mm / s). To lower. As soon as the end face of the base body 1 reaches the surface of the base board 10, the base body 1 is immediately raised at a first speed V2 (for example, 1 to 25 mm / s) and suction of the conductive paste film 22 is started. .
[0037]
Then, the element body 1 is raised at the second speed V3 (for example, 0.05 to 1 mm / s) until the end face of the element body 1 exceeds the reference plane H1 of the conductive paste film 22, and then the element body 1 When the end face is completely separated from the reference plane H1, the end face is raised at a third speed V4 (for example, 10 to 30 mm / s). The first speed V2 is faster than the second speed V3.
[0038]
In the fourth example, as shown in FIG. 5, first, the surface of the conductive paste film 22 is squeezed so as to have a predetermined height h, and then the element body 1 is moved to a speed V1 (for example, 10 to 30 mm / s). To lower. When the end face of the base body 1 reaches the surface of the base board 10, the base body 1 is temporarily stopped (T seconds, for example, within 1 second), and suction of the conductive paste film 22 is started. Thereafter, the element body 1 is raised at a second speed V3 (for example, 0.05 to 1 mm / s), and the third speed V4 (for example, 10 to 10) is reached from the time when the end surface of the element body 1 reaches the reference plane H1. 30 mm / s).
[0039]
In the fourth example, since the bottom dead center holding time T is provided, the effect of suppressing the crescent moon shape is slightly inferior to the first to third examples. However, the conductive paste film 22 is sucked in a state where the end face of the element body 1 is in contact with the surface of the base board 10, and the element body 1 is lifted after the completion of the suction, thereby causing variations in the bottom dead center of the element body 1. The resulting variation in crescent volume is reduced.
[0040]
In the first to fourth examples described above, the timing of starting the suction of the conductive paste film 22 is such that the end face of the element body 1 contacts the conductive paste film 22 after the element body 1 reaches the bottom dead center. Any time may be used as long as it is in progress. Further, in order to apply the conductive paste to the next element body, the timing of extruding the conductive paste film 22 on the base board 10 is the same as that of the conductive element that has been extruded to the end face of the element body 1 to which the conductive paste has already been applied. It is necessary to set so that the paste film 22 does not adhere.
[0041]
(Experimental result)
In the first to fourth examples, external electrodes were formed on a multilayer capacitor having an element body 1 with a length of 0.4 mm, a width of 0.2 mm, and a height of 0.2 mm. The return dimension L of the external electrode 2 is 0.09 mm. The conductive paste film 22 was made of Cu having a viscosity of 20 Pa · s (E type, 1 rpm), and the film thickness h was 50 to 70 μm.
[0042]
In the conventional immersion profile shown in FIG. 9, the average value of the crescent amount D was 31 μm. On the other hand, the average value of the crescent amount D in the first to fourth examples was 17 μm.
[0043]
(Configuration of coating apparatus, see FIGS. 6 and 7)
In the coating apparatus, a rubber sheet 13 is provided on the lower surface side of the base board 10 having a large number of suction holes 11 via a space 12, the space 12 is filled with a conductive paste, and the rubber sheet 13 is moved up and down by an extrusion pin 14. It is configured as follows. The push pin 14 is installed on the base plate 15 and moves up and down integrally as the base plate 15 moves up and down.
[0044]
When the rubber sheet 13 rises as the push pin 14 rises, the conductive paste filled in the space 12 is pushed out to the surface of the base board 10 through the suction holes 11. When the rubber sheet 13 is lowered as the push pin 14 is lowered, the conductive paste on the base board 10 is drawn into the space 12 through the suction hole 11.
[0045]
The state where the end face portion 1a of the element body 1 is immersed in the conductive paste film 22 is as shown in FIG. In this coating apparatus, the suction holes 11 are uniformly distributed on the base board 10 in order to efficiently suck the conductive paste film 22 (see FIG. 7B). The diameter and pitch of the suction holes 11 are preferably set so that the plurality of suction holes 11 face the end face of the element body 1. The suction hole 11 is preferably opposed to the peripheral edge of the end face of the element body 1.
[0046]
(Other embodiments)
In addition, the manufacturing method of the electronic component which concerns on this invention is not limited to the said embodiment, It can change variously within the range of the summary.
[0047]
In particular, the step of reducing the thickness of the conductive paste film 22 can be performed by means of blowing air to the conductive paste film 22. That is, as shown in FIG. 8, after the element body 1 is immersed in the conductive paste film 22, air may be blown from the nozzle 25 to reduce the thickness of the conductive paste film 22 around the end face portion 1a. .
[0048]
【The invention's effect】
As is apparent from the above description, according to the present invention, the force that reduces the reference surface of the conductive paste film that immerses the end face portion of the element body wets the conductive paste attached to the end face portion of the element body. Since it acts in the direction which suppresses a rise, the crescent shape of the formed external electrode becomes small.
[Brief description of the drawings]
FIG. 1 is an explanatory view showing an external electrode forming step in a method for manufacturing an electronic component according to the present invention.
FIG. 2 is a graph showing a first example of an immersion profile and suction timing in an external electrode formation step.
FIG. 3 is a graph showing a second example of the immersion profile and suction timing in the external electrode forming step.
FIG. 4 is a graph showing a third example of the immersion profile and suction timing in the external electrode forming step.
FIG. 5 is a graph showing a fourth example of the immersion profile and suction timing in the external electrode forming step.
FIG. 6 is a cross-sectional view showing an outline of a coating apparatus used in the manufacturing method according to the present invention.
7A is a cross-sectional view schematically showing the main part of the coating apparatus, and FIG. 7B is a plan view showing the positional relationship between the suction holes and the element body.
FIG. 8 is an explanatory diagram showing a state in which air is blown onto the paste film in order to reduce the thickness of the conductive paste film.
FIG. 9 is a graph showing a conventional immersion profile.
FIG. 10 is a front view showing an external electrode formed by a conventional immersion profile.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 ... Element body 1a ... End surface part 2 ... External electrode 10 ... Base board 11 ... Suction hole 22 ... Conductive paste film 25 ... Nozzle for air spraying H1 ... Reference plane h ... Thickness of conductive paste film

Claims (10)

電子部品の素体を下降させて該素体の端面部分を所定の基準面までの厚みを保持する導電性ペースト膜に浸漬する工程と、
前記素体を上昇させて前記端面部分を前記導電性ペースト膜から引き上げ、該端面部分に導電性ペーストを付与する工程と、
前記素体の端面部分が前記導電性ペースト膜に浸漬した後から該端面部分が導電性ペースト膜の表面から引き上げられるまでに、該導電性ペースト膜の前記基準面を低下させる工程と、
を備え
前記素体の端面が下死点まで下降した時点、前記素体の端面部分が前記導電性ペースト膜に浸漬されている状態で該素体の上昇を一旦停止させた時点、又は、前記素体の端面が下死点まで下降したときに該素体を一旦停止させた時点、のいずれかで前記導電性ペースト膜の前記基準面を低下させること、
を特徴とする電子部品の製造方法。
Dipping the element body of the electronic component into a conductive paste film that maintains the thickness of the end surface portion of the element body to a predetermined reference surface; and
Raising the element body and pulling up the end face portion from the conductive paste film, and applying a conductive paste to the end face portion;
A step of lowering the reference surface of the conductive paste film after the end face portion of the element body is immersed in the conductive paste film and before the end face portion is pulled up from the surface of the conductive paste film;
Equipped with a,
When the end face of the element body is lowered to bottom dead center, when the end face portion of the element body is immersed in the conductive paste film, and when the element body is temporarily stopped rising, or the element body Lowering the reference surface of the conductive paste film at any time when the element body is once stopped when the end surface of the lowering to the bottom dead center,
A method of manufacturing an electronic component characterized by the above.
前記導電性ペースト膜の前記基準面を低下させる工程を、導電性ペースト膜の下面側に設けた吸引手段にて行うことを特徴とする請求項1に記載の電子部品の製造方法。2. The method of manufacturing an electronic component according to claim 1, wherein the step of lowering the reference surface of the conductive paste film is performed by suction means provided on the lower surface side of the conductive paste film. 前記導電性ペースト膜は、多数の吸引孔を有するベース盤上に所定の厚みとなるように形成され、該吸引孔から吸引されることにより前記基準面が低下することを特徴とする請求項2に記載の電子部品の製造方法。3. The conductive paste film is formed to have a predetermined thickness on a base board having a plurality of suction holes, and the reference plane is lowered by being sucked from the suction holes. The manufacturing method of the electronic component of description. 前記吸引孔は前記ベース盤に均一に分布しており、前記素体の端面に対して複数の吸引孔が対向することを特徴とする請求項3に記載の電子部品の製造方法。  4. The method of manufacturing an electronic component according to claim 3, wherein the suction holes are uniformly distributed in the base board, and a plurality of suction holes are opposed to an end face of the element body. 前記吸引孔は前記素体の端面の周縁部に対向することを特徴とする請求項4に記載の電子部品の製造方法。  The method of manufacturing an electronic component according to claim 4, wherein the suction hole faces a peripheral portion of an end face of the element body. 前記素体の端面を前記ベース盤の表面まで下降させることを特徴とする請求項3に記載の電子部品の製造方法。  The method of manufacturing an electronic component according to claim 3, wherein an end surface of the element body is lowered to a surface of the base board. 前記素体の端面が下死点まで下降した直後に該素体を上昇させることを特徴とする請求項2、請求項3又は請求項6に記載の電子部品の製造方法。  The method of manufacturing an electronic component according to claim 2, wherein the element body is raised immediately after the end face of the element body is lowered to the bottom dead center. 前記素体の端面が下死点まで下降した直後に該素体を第1の速度で上昇させ、前記端面が前記導電性ペースト膜の基準面に上昇するまでに該素体の上昇を一旦停止させ、その後、該素体を第2の速度で上昇させることを特徴とする請求項2、請求項3又は請求項6に記載の電子部品の製造方法。  Immediately after the end face of the element body is lowered to the bottom dead center, the element body is raised at the first speed, and the rise of the element body is temporarily stopped until the end face rises to the reference surface of the conductive paste film. 7. The method of manufacturing an electronic component according to claim 2, wherein the element body is then raised at a second speed. 前記素体の端面が下死点まで下降した直後に該素体を第1の速度で上昇させ、前記端面が前記導電性ペースト膜の基準面を超えるまで該素体を第2の速度で上昇させ、その後、該素体を第3の速度で上昇させることを特徴とする請求項2、請求項3又は請求項6に記載の電子部品の製造方法。  Immediately after the end face of the element body is lowered to the bottom dead center, the element body is raised at the first speed, and the element body is raised at the second speed until the end face exceeds the reference plane of the conductive paste film. 7. The method of manufacturing an electronic component according to claim 2, wherein the element body is then raised at a third speed. 前記第1の速度は前記第2の速度よりも速いことを特徴とする請求項8又は請求項9に記載の電子部品の製造方法。Said first speed method for manufacturing the electronic component according to claim 8 or claim 9, wherein the higher than said second speed.
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