JP5445286B2 - Method for manufacturing silicon carbide single crystal substrate - Google Patents

Description

  The present invention relates to a method for manufacturing a SiC single crystal substrate including a step of cutting a SiC single crystal ingot by pressing the wire against a silicon carbide (hereinafter referred to as SiC) single crystal ingot in a state where the stretched wire is running. Is.

  Conventionally, as a manufacturing method for manufacturing a SiC single crystal substrate by cutting a SiC single crystal ingot, for example, Patent Document 1 discloses the following manufacturing method. Specifically, a wire saw device having a wire row in which the wire is stretched in a plurality of rows by winding the wire a plurality of times around a plurality of rollers, while supplying diamond slurry to the wire, or on the wire A SiC single crystal substrate is manufactured by pressing a SiC single crystal ingot against a wire row and cutting the SiC single crystal ingot in a state in which diamond is electrodeposited and the wire row is unidirectionally moved or reciprocated by rotation of a roller. A manufacturing method is disclosed.

JP 2009-61529 A

  However, in the above method for manufacturing a SiC single crystal substrate, when the SiC single crystal ingot is started to be cut by the wire saw device, each wire constituting the wire row comes into contact with the SiC single crystal ingot at one point, and the SiC single crystal ingot is The crystal ingot is subjected to a great amount of stress from each wire at the contact point. In general, since there are minute irregularities on the side surface of the SiC single crystal ingot, the stress applied to the SiC single crystal ingot does not diffuse uniformly in the SiC single crystal ingot, To concentrate. For this reason, when a SiC single crystal ingot is cut with a wire saw device, there is a problem that the SiC single crystal ingot may be cracked starting from an uneven portion.

  In view of the above points, an object of the present invention is to provide a method for manufacturing a SiC single crystal substrate that can prevent the SiC single crystal ingot from cracking when the SiC single crystal ingot is cut.

In order to achieve the above object, in the first aspect of the present invention, a step of preparing a SiC single crystal ingot (1) having side surfaces, and a step of covering at least the side surfaces of the SiC single crystal ingot (1) with a resin (3) The resin (3) is pressed by pressing the resin (3) against the wire while supplying the diamond slurry to the wire, or by depositing diamond on the wire and running the wire. while cut, by pressing the side surface of the SiC single crystal ingot (1) to the wire, viewed including the steps of forming a plurality of SiC single crystal substrate (4) by cutting SiC single crystal ingot (1), the In the step of forming the SiC single crystal substrate (4), the process is finished after cutting the SiC single crystal ingot (1) and before cutting all the resin (3). A step of holding a plurality of SiC single crystal substrates (4) in a holding part (3a) which is a portion located on the downstream side in the cutting direction of the resin (3) and is not cut by a wire; And a step of separating each of the plurality of SiC single crystal substrates (4) by removing the holding portion (3a) .

  In such a method of manufacturing a SiC single crystal substrate, when the SiC single crystal ingot (1) starts to be cut, the wire comes into contact with the SiC single crystal ingot (1) while being in contact with the resin (3). . For this reason, when starting to cut the SiC single crystal ingot (1), stress is applied from the wire to the resin (3) and the SiC single crystal ingot (1). The stress applied to the SiC single crystal ingot (1) can be suppressed. Moreover, since the level | step difference of the uneven | corrugated | grooved part which exists in the side surface of a SiC single crystal ingot (1) is about 0.1 micrometer-5 mm normally, and the level | step difference of the part is embedded with resin (3), a SiC single crystal ingot (1) It can suppress that stress concentrates on the uneven | corrugated | grooved part. From the above, the stress concentrated on the uneven portion can be suppressed, and the SiC single crystal ingot (1) can be prevented from cracking starting from the uneven portion.

Moreover, in invention of Claim 2 and 3 , after the process which prepares a SiC single-crystal ingot (1), it has a side surface between one surface and the back surface on the opposite side to one surface, and the one surface, and a back surface, And a step of mounting the SiC single crystal ingot (1) on the base (2) having the first reference surface (2a) on the substrate, and the crystal axis of the SiC crystal substrate (5) is that of the SiC single crystal ingot (1). When it is assumed that θ is deviated around the ingot axis, the second reference surface whose angle to the cut first reference surface (2a) is θ by cutting a part of the first reference surface (2a) (2b) is formed, and in the step of covering with the resin (3), the second reference surface (2b) is exposed and at least the side surface of the SiC single crystal ingot (1) is covered with the resin (3), In the process of forming the SiC single crystal substrate (4), the SiC single crystal substrate Tsu in cutting direction and state of being perpendicular to the second reference surface (2b) of the bets (1), is characterized by cutting the SiC single crystal ingot (1).
And like invention of Claim 4, resin (3) can be made into an epoxy resin. In such a manufacturing method, since an inexpensive epoxy resin is used as the resin (3), it is possible to cover the side surface of the SiC single crystal ingot (1) with the resin (3) while suppressing an increase in cost. it can.

  In addition, the code | symbol in the bracket | parenthesis of each means described in this column and the claim shows the correspondence with the specific means as described in embodiment mentioned later.

It is a figure which shows the manufacturing process of the SiC single crystal substrate in 1st Embodiment of this invention. It is a figure which shows the manufacturing process of the SiC single crystal substrate following FIG. It is the figure shown about the relationship between an ingot axis | shaft and a crystal axis. (A) is a figure which shows the state when (theta) of the maximum inclination direction is rotated centering | focusing on the ingot axis | shaft about a SiC single crystal ingot, (b) is when the SiC single crystal ingot is shifted λ of the maximum inclination angle. It is a figure which shows a state. It is a figure which shows the manufacturing process of the SiC single crystal substrate in 2nd Embodiment of this invention. It is a figure which shows the manufacturing process of the SiC single crystal substrate in 3rd Embodiment of this invention. It is a figure which shows the cross-sectional structure of the state which covered the side surface of the SiC single crystal ingot in other embodiment of this invention with resin.

(First embodiment)
A first embodiment of the present invention will be described. FIG. 1 is a view showing a manufacturing process of a SiC single crystal substrate according to the present invention, and FIG. 2 is a view showing a manufacturing process following FIG. In addition, the figure on the left side of FIG. 1 is a sectional view, and the figure on the right side of FIG. 2 is a cross-sectional view, and the drawing on the right side of the drawing is a view taken along the arrow B in the drawing on the left side of the drawing.

  First, as shown in FIG. 1A, a SiC single crystal ingot 1 is prepared, and the SiC single crystal ingot 1 is mounted on a base 2. As this SiC single crystal ingot 1, for example, a single crystal ingot having a minute unevenness on the side surface grown by a sublimation recrystallization method on a seed crystal can be used. In this embodiment, the SiC single crystal ingot 1 has a cylindrical shape. The base 2 is made of, for example, a putty-like epoxy resin, and has one surface, a back surface opposite to the one surface, a side surface between the one surface and the back surface, and a first reference surface on the side surface. It is made into the plate shape which has 2a. In the present embodiment, the base 2 has a square shape, and the SiC single crystal ingot 1 is mounted on one surface of the base 2.

  Thereafter, as shown in FIG. 1B, by cutting a part of the first reference surface 2a in the base 2, the second reference that makes an angle with the cut first reference surface 2a becomes θ. Surface 2b is formed. The second reference plane 2b is formed when the ingot axis of the SiC single crystal ingot 1 (hereinafter simply referred to as the ingot axis) and the crystal axis with respect to the desired crystal plane (hereinafter simply referred to as the crystal axis) do not coincide with each other. This is for correcting an angle for obtaining a desired crystal plane when the crystal ingot 1 is cut. As will be described later, θ is a value when the crystal axis is shifted by θ in the maximum inclination direction around the ingot axis. When the SiC single crystal ingot 1 is cut with a wire saw device by correcting the angle for obtaining a desired crystal plane, which will be described later, by forming the second reference surface 2b using the base 2 in this manner, Since it is not necessary to make a cut in order to mark the SiC single crystal ingot 1 directly, it is possible to prevent the SiC single crystal ingot 1 from cracking.

  Here, the relationship between the ingot axis and the crystal axis will be briefly described. Although specifically described later, in order to manufacture a SiC substrate having a desired crystal plane by cutting the SiC single crystal ingot 1 using a general wire saw device, the crystal axis is perpendicular to the cutting plane. It is necessary to arrange SiC single crystal ingot 1 in a wire saw device in a state. That is, as shown in FIG. 2, the axis perpendicular to the cutting plane is taken as the z-axis, the axis perpendicular to the z-axis and parallel to the cutting direction is taken as the y-axis, and perpendicular to the z-axis and y-axis, respectively. When the x axis is the x axis, the SiC single crystal ingot 1 needs to be arranged in the wire saw apparatus with the crystal axis aligned with the z axis. Hereinafter, a method for making the crystal axis coincide with the z-axis with reference to the ingot axis will be described. The xz plane is a plane parallel to one surface of a pedestal described later, and is a plane perpendicular to the cutting direction of the SiC single crystal ingot 1. The xy plane is a cut of the SiC single crystal ingot 1. A plane parallel to the direction.

  FIG. 3 is a diagram showing the relationship between the ingot axis and the crystal axis. The x-axis, y-axis, and z-axis in FIG. 3 correspond to the x-axis, y-axis, and z-axis in FIG. 2, and the ingot axis and the z-axis coincide with each other as an initial state. To do.

  As shown in FIG. 3, in this embodiment, the crystal axis is shifted from the ingot axis (z axis) by λ of the maximum inclination angle and θ in the maximum inclination direction. In this case, in order to manufacture a SiC single crystal substrate having a desired crystal plane, if the SiC single crystal ingot 1 is arranged in a wire saw apparatus in a state where the crystal axis and the z axis coincide with each other as follows, Good. FIG. 4A is a diagram showing a state when the SiC single crystal ingot 1 is rotated about the ingot axis by θ in the maximum tilt direction, and FIG. 4B is a diagram showing the SiC single crystal ingot 1 having the maximum tilt angle λ. It is a figure which shows a state when only shifting.

  That is, first, as shown in FIG. 4A, the SiC single crystal ingot 1 is rotated by θ in the maximum inclination direction around the ingot axis so that the crystal axis coincides with the xz plane. In the present embodiment, by cutting a part of the first reference surface 2a of the base 2, the second reference surface 2b having an angle of θ with the cut first reference surface 2a is formed. For this reason, in the process of FIG. 2 to be described later, the SiC single crystal ingot 1 is arranged in the wire saw device so that the cutting direction of the SiC single crystal ingot 1 and the second reference surface 2b are perpendicular to each other. Can be corrected.

  Then, as shown in FIG. 4B, the crystal axis is matched with the z axis by shifting the SiC single crystal ingot 1 by λ of the maximum tilt angle on the xz plane. In the present embodiment, in the step of FIG. 2 to be described later, the SiC single crystal ingot 1 is disposed in the wire saw device in a state where the angle between the one surface of the base 2 and the wire is λ, so that the maximum inclination angle is increased. λ can be corrected. Note that the SiC single crystal ingot 1 in the state of FIG. 4B corresponds to the SiC single crystal ingot 1 of FIG.

  As shown in FIG. 3, the maximum tilt angle λ and the maximum tilt direction θ are measured by measuring the tilt angle α in the x-axis direction and the tilt angle β in the y-axis direction with respect to the ingot axis of the crystal axis. Is obtained. Here, in FIG. 3, the point where the x axis, the y axis, and the z axis intersect is the origin O, the point where the one surface and the crystal axis intersect on the one surface opposite to the base 2 side of the SiC single crystal ingot 1. A, when a straight line is drawn from the point A in the direction parallel to the y-axis, the point where the straight line intersects the xz plane is B, the length of the line segment OA is a, the length of the line segment OB is b, Let c be the length of the line segment AB.

As shown in FIG. 3, λ of the maximum inclination angle is represented by (α ² + β ² ) ^1/2 , and θ in the maximum inclination direction is formed by the origin O, point A, and point B in FIG. This is because the triangle is represented by tan ⁻¹ (c / b). In FIG. 3, when the length from the intersection of the ingot axis and the crystal axis to the origin O is r, b = r × tan (2π · α / 360) and c = r × tan (2π · β / 360). Therefore, if the tilt angles α and β are measured, the deviation of the crystal axis from the ingot axis can be obtained. The inclination angles α and β are obtained by using a well-known X-ray azimuth measuring device. For example, an X-ray azimuth measuring device having an X-ray generator and an X-ray detector is prepared, and the SiC single crystal ingot 1 is irradiated with X-rays while rotating the SiC single crystal ingot 1. The X-rays reflected by are detected. In the X-ray detector, since the amount of reflection when the Bragg diffraction condition is satisfied is the largest, the inclination angles α and β are measured based on the rotation angle of the SiC single crystal ingot 1 at that time (for example, Japanese Patent Laid-Open 11-37958 etc.).

  When the ingot axis and the crystal axis coincide with each other, it may be cut perpendicularly to the ingot axis as it is, so that a part of the first reference plane 2a is cut out of the base 2 in FIG. The process may not be performed.

  Subsequently, as shown in FIG. 1C, the SiC single crystal ingot 1 is covered with a resin 3 such as putty-like epoxy. Specifically, the SiC single crystal ingot 1 is placed on the base 2 while being mounted on the base 2, and the SiC single crystal ingot 1 is made of the resin 3 so that the second reference surface 2b formed on the base 2 is exposed. cover. At this time, since there are minute irregularities on the side surface of the SiC single crystal ingot 1, the SiC single crystal ingot 1 and the resin 3 are bonded with a high adhesive force due to the anchor effect. When a putty-like epoxy resin is used as the resin 3, since the fluidity is low, after placing the putty-like epoxy resin on the lower surface of the mold, the SiC single crystal ingot 1 is placed in the mold, Furthermore, the resin 3 is arrange | positioned around the SiC single crystal ingot 1 by arrange | positioning so that a putty-like epoxy resin may be pushed in into a type | mold.

  After that, as shown in FIG. 2, the resin 3 is applied to the wire using a stretched wire while supplying diamond slurry to the wire or by electrodepositing diamond on the wire and running the wire. The process of forming a plurality of SiC single crystal substrates 4 by cutting the SiC single crystal ingot 1 by pressing the side surface of the SiC single crystal ingot 1 against the wire while cutting the resin 3 by pressing. In other words, when the SiC single crystal ingot 1 is cut, a step of cutting the SiC single crystal ingot 1 is performed by bringing the wire into contact with the SiC single crystal ingot 1 while making contact with the resin 3.

  In this process, for example, a wire such as one magnetic metal material wire is spirally wound around three grooved rollers (hereinafter simply referred to as rollers) arranged in a triangular shape, and two of the three rollers are wound. It can be performed using a general wire saw device in which wire rows arranged in a plurality of rows are formed between rollers. In such a wire saw device, the remaining one of the three rollers is rotated by a motor, and the wire is reciprocated at a high speed by rotating the roller. It is like that.

  Further, a pedestal having a surface perpendicular to the cutting direction is provided below the wire row, and the SiC single crystal ingot 1 covered with the resin 3 via an adhesive member is provided on one surface of the pedestal. The SiC single crystal ingot 1 is cut by being fixed and moving the pedestal. In the present embodiment, the second reference surface 2b is orthogonal to the cutting direction of the SiC single crystal ingot 1, in other words, the second reference surface 2b and one surface of the pedestal are parallel, and one surface of the base 2 and the wire The SiC single crystal ingot 1 covered with the resin 3 is arranged on the pedestal so that the formed angle is λ. As shown in FIG. 3, by arranging the SiC single crystal ingot 1 so that the second reference plane 2b is orthogonal to the cutting direction of the SiC single crystal ingot 1, θ in the maximum tilt direction can be corrected. By arranging the angle between one surface of the base 2 and the wire to be λ, the maximum inclination angle λ can be corrected, and a desired crystal plane can be obtained when the SiC single crystal ingot 1 is cut. This is because the SiC single crystal substrate 4 can be obtained.

  Thereafter, although not shown, the resin 3 disposed on the side surface of the SiC single crystal substrate 4 is softened and removed by chemicals such as alcohol-based and glycol-based organic solvents.

  In such a SiC single crystal substrate manufacturing method, the side surface of the SiC single crystal ingot 1 is covered with the resin 3, and the side surface of the SiC single crystal ingot 1 is cut while the resin 3 is cut by pressing the resin 3 against the wire. Is pressed against the wire to cut the SiC single crystal ingot 1 to form a plurality of SiC single crystal substrates 4. That is, when starting to cut the SiC single crystal ingot 1, the wire comes into contact with the SiC single crystal ingot 1 while being in contact with the resin 3. For this reason, when the SiC single crystal ingot 1 is started to be cut, stress is applied from the wire to the resin 3 and the SiC single crystal ingot 1. Compared with the conventional manufacturing method, the SiC single crystal ingot 1 from the wire. The stress applied to can be suppressed. Therefore, the stress concentrated on the uneven portion can be suppressed, and the SiC single crystal ingot 1 can be prevented from cracking starting from the uneven portion.

  Furthermore, since the SiC single crystal ingot 1 and the resin 3 are bonded with a high adhesive force due to the anchor effect, for example, the SiC single crystal ingot 1 is compared with the case where the SiC single crystal ingot 1 is covered with gypsum or the like. Separation of resin 3 from SiC single crystal ingot 1 during cutting can be suppressed. In addition, since the resin 3 is arranged on the side surface of the SiC single crystal substrate 4 even after the SiC single crystal ingot 1 is cut, the side surface of the SiC single crystal substrate 4 can be protected when removed from the wire saw device. .

  Even if the stress is concentrated on the uneven portion of the SiC single crystal ingot 1, the SiC single crystal ingot 1 is covered with the resin 3, and the stress on the uneven portion is also diffused into the resin 3. It can suppress that a crack arises when the single crystal ingot 1 is cut | disconnected with a wire.

  Of course, unevenness also exists on the surface of the resin 3, and when the resin 3 is started to be cut by the wire, a great amount of stress is applied to the surface of the resin 3, and the stress is concentrated on the uneven portion of the resin 3. However, the resin 3 has a lower hardness than the SiC single crystal ingot 1 and is hard to break, and even if the resin 3 is cracked, the SiC single crystal ingot 1 has no particular problem.

(Second Embodiment)
A second embodiment of the present invention will be described. The manufacturing method of the SiC single crystal substrate of the present embodiment is the same as that of the first embodiment except that the manufacturing process shown in FIG. 2 is changed with respect to the first embodiment. To do. FIG. 5 is a cross-sectional view showing a manufacturing process of the SiC single crystal substrate 4 according to the present embodiment.

  As shown in FIG. 5A, in the present embodiment, when the SiC single crystal ingot 1 is cut with a wire, the process is finished after cutting the SiC single crystal ingot 1 and before cutting all the resin 3. To do. That is, the wire cutting process is completed in a state in which the plurality of SiC single crystal substrates 4 are held by the holding portion 3a that is located on the downstream side in the cutting direction of the resin 3 and is not cut by the wire. To do.

  Thereafter, as shown in FIG. 5B, the SiC single crystal ingot 1 covered with the resin 3 is removed from the wire saw apparatus while the plurality of SiC single crystal substrates 4 are held by the holding portions 3 a. In a state where the substrate is held by a jig (not shown), the holding portion 3a is removed to separate the plurality of SiC single crystal substrates 4 from each other. For example, the holding part 3a can be removed by cutting the resin 3 in a direction perpendicular to the cutting direction when the SiC single crystal ingot 1 is cut by a wire on the downstream side in the cutting direction of the resin 3.

  In such a manufacturing method, the SiC single crystal substrate 4 is held by the holding unit 3a, and the holding unit 3a is removed in a state where the SiC single crystal ingot 1 covered with the resin 3 is held. The crystal substrates 4 are separated from each other. For this reason, in the first embodiment, since the resin 3 is completely cut by the wire, there is a possibility that the SiC single crystal substrate 4 falls after the cutting, so that the surface may be scratched or cracked. In the manufacturing method according to the embodiment, it is possible to obtain the same effect as that of the first embodiment while suppressing the surface of the SiC single crystal substrate 4 from falling and being cracked or cracked.

(Third embodiment)
A third embodiment of the present invention will be described. The manufacturing method of the SiC single crystal substrate according to the present embodiment includes a step of adjusting the shape of the base 2 between the step of FIG. 1B and the step of FIG. The other operations are the same as in the first embodiment, and the description thereof is omitted here. FIG. 6 is a view showing a manufacturing process of the SiC single crystal according to the present embodiment, and is a view showing a state after the process of FIG. 1C is performed.

  As shown in FIG. 6, in the present embodiment, after performing the process of FIG. 1B, the base 2 is cut into a square shape having the second reference surface 2 b as one side, and the process shown in FIG. Similarly to the process, the SiC single crystal ingot 1 is covered with the resin 3 so that the second reference surface 2b formed on the base 2 is exposed. That is, the amount of the resin 3 disposed around the SiC single crystal ingot 1 is reduced as compared with the first embodiment.

  In such a manufacturing method, since the number of places where the wire cuts the resin 3 is reduced, cutting waste generated when cutting the resin 3 can be reduced, and the cutting efficiency of the wire saw device is reduced by the cutting waste. The effect similar to the said 1st Embodiment can be acquired, suppressing this.

(Other embodiments)
In the first embodiment, the example in which the SiC single crystal ingot 1 is covered with the resin 3 has been described. However, the present invention is of course not limited to such a configuration, and at least the side surface of the SiC single crystal ingot 1 is covered with the resin 3. If it is, the effect of this invention can be acquired. Further, the SiC single crystal ingot 1 is not limited to a cylindrical shape, and the SiC single crystal ingot 1 may have a tapered side surface or a convex shape on the side opposite to the side mounted on the base 2. It may be said. FIG. 7 shows a cross-sectional configuration in a state where the side surface of SiC single crystal ingot 1 is covered with resin 3.

  For example, as shown in FIG. 7 (a), the resin 3 may be disposed on at least the side surface of the cylindrical SiC single crystal ingot 1, and the side surface is tapered as shown in FIG. 7 (b). The SiC single crystal ingot 1 having a shape is used, and the resin 3 may be disposed on at least the side surface of the SiC single crystal ingot 1. Further, as shown in FIG. 7C, a SiC single crystal ingot 1 having a cylindrical shape and having a convex shape on the side opposite to the side mounted on the base 2 is used. The resin 3 only needs to be disposed on at least the side surface of the ingot 1, and the side surface is tapered as shown in FIG. 7D, and the side opposite to the side mounted on the base 2 is convex. The SiC single crystal ingot 1 having a shape is used, and the resin 3 may be disposed on at least the side surface of the SiC single crystal ingot 1.

DESCRIPTION OF SYMBOLS 1 SiC single crystal ingot 2 Base 2a 1st reference surface 2b 2nd reference surface 3 Resin 4 SiC single crystal substrate

Claims (4)

A silicon carbide single crystal substrate manufacturing method for manufacturing a silicon carbide single crystal substrate (4) by cutting a silicon carbide single crystal ingot (1),
Providing the silicon carbide single crystal ingot (1) having side surfaces;
Covering at least a side surface of the silicon carbide single crystal ingot (1) with a resin (3);
Using the stretched wire, while supplying diamond slurry to the wire, or by electrodepositing diamond on the wire and running the wire, the resin (3) is pressed against the wire. By cutting the silicon carbide single crystal ingot (1) by pressing the side surface of the silicon carbide single crystal ingot (1) against the wire while cutting the resin (3), a plurality of the silicon carbide single crystal substrates (4) look including a step of forming a,
The step of forming the silicon carbide single crystal substrate (4) ends after cutting the silicon carbide single crystal ingot (1) and before cutting all of the resin (3). (3) a step of holding the plurality of silicon carbide single crystal substrates (4) at a holding portion (3a) that is located downstream in the cutting direction and is not cut by the wire; And a step of separating each of the plurality of silicon carbide single crystal substrates (4) by removing the holding portion (3a), and a method of manufacturing a silicon carbide single crystal substrate. After the step of preparing the silicon carbide single crystal ingot (1), the silicon carbide single crystal ingot (1) has one surface, a back surface opposite to the one surface, and a side surface between the one surface and the back surface, and the first reference surface (2a ) Having a step of mounting the silicon carbide single crystal ingot (1) on the base (2) having the above and a crystal axis of the silicon carbide crystal substrate (5) is an ingot of the silicon carbide single crystal ingot (1). When it is assumed that θ is deviated around the axis, by cutting a part of the first reference surface (2a), the second reference where the angle formed with the cut first reference surface (2a) becomes θ. Forming a surface (2b),
In the step of covering with the resin (3), the second reference surface (2b) is exposed and at least the side surface of the silicon carbide single crystal ingot (1) is covered with the resin (3),
In the step of forming the silicon carbide single crystal substrate (4), the silicon carbide single crystal ingot is formed in a state where the cutting direction of the silicon carbide single crystal ingot (1) and the second reference plane (2b) are orthogonal to each other. (1) the method of producing a silicon carbide single crystal substrate according to claim 1, characterized in that cutting the. A silicon carbide single crystal substrate manufacturing method for manufacturing a silicon carbide single crystal substrate (4) by cutting a silicon carbide single crystal ingot (1),
Providing the silicon carbide single crystal ingot (1) having side surfaces;
Covering at least a side surface of the silicon carbide single crystal ingot (1) with a resin (3);
Using the stretched wire, while supplying diamond slurry to the wire, or by electrodepositing diamond on the wire and running the wire, the resin (3) is pressed against the wire. By cutting the silicon carbide single crystal ingot (1) by pressing the side surface of the silicon carbide single crystal ingot (1) against the wire while cutting the resin (3), a plurality of the silicon carbide single crystal substrates (4) look including a step of forming a,
After the step of preparing the silicon carbide single crystal ingot (1), the silicon carbide single crystal ingot (1) has one surface, a back surface opposite to the one surface, and a side surface between the one surface and the back surface, and the first reference surface (2a ) Having a step of mounting the silicon carbide single crystal ingot (1) on the base (2) having the above and a crystal axis of the silicon carbide crystal substrate (5) is an ingot of the silicon carbide single crystal ingot (1). When it is assumed that θ is deviated around the axis, by cutting a part of the first reference surface (2a), the second reference where the angle formed with the cut first reference surface (2a) becomes θ. Forming a surface (2b),
In the step of covering with the resin (3), the second reference surface (2b) is exposed and at least the side surface of the silicon carbide single crystal ingot (1) is covered with the resin (3),
In the step of forming the silicon carbide single crystal substrate (4), the silicon carbide single crystal ingot is formed in a state where the cutting direction of the silicon carbide single crystal ingot (1) and the second reference plane (2b) are orthogonal to each other. A method for manufacturing a silicon carbide single crystal substrate, comprising cutting (1) . The method for manufacturing a silicon carbide single crystal substrate according to any one of claims 1 to 3, wherein the resin (3) is an epoxy resin.

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