JP6595014B2 - 光子を放射し検出するためのデバイスおよびそれを製造する方法 - Google Patents
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Description
(a)ハードウェアのみの回路実装(例えば、アナログおよび/またはデジタル回路だけでの実装)および
(b)回路およびソフトウェア(および/またはファームウェア)の組み合わせ、例えば(該当するとき):(i)1つまたは複数のプロセッサの組み合わせ、または(ii)1つまたは複数のプロセッサ/ソフトウェアの部分(協同して携帯電話もしくはサーバ等の装置に種々の機能を実行させる1つもしくは複数のデジタル信号処理装置、ソフトウェア、または1つもしくは複数のメモリを含む)および
(c)たとえそのソフトウェアまたはファームウェアが物理的に存在しなくても、動作するためにソフトウェアまたはファームウェアを必要とする回路、例えば1つもしくは複数のマイクロプロセッサまたは1つもしくは複数のマイクロプロセッサの部分。
"回路"のこの定義は、どの請求項における使用をも含めて本出願においてはこの用語のあらゆる使用に当てはまる。さらなる例として、本出願で使用されるとき、"回路"という用語は、単なる1つのプロセッサ(または複数のプロセッサ)もしくは1つのプロセッサの部分ならびにそれに(もしくは、それらに)付随するソフトウェアおよび/またはファームウェアの実装をも含むであろう。"回路"という用語は、例えば、特定の請求項要素に当てはまるならば、携帯電話用のベースバンド集積回路もしくはアプリケーション・プロセッサ集積回路、または、サーバ、セルラ・ネットワーク・デバイス、もしくは他のネットワーク・デバイス内の類似する集積回路をも含むであろう。
Claims (12)
- 半導電層と導電層との間に位置する材料を有する装置であって、
前記半導電層はグラフェンを有し、前記グラフェンはグラフェン電界効果トランジスタを形成し、
前記半導電層および前記導電層は、第1動作モードにおいては前記材料が光子放射器として機能するように、前記半導電層と前記導電層との間に電場が加えられ、第2動作モードにおいては前記材料が光子検出器として機能するように、前記導電層によって電場が供給されず、前記半導電層が電界効果トランジスタ内にチャネルを提供するように前記半導電層はソース電極およびドレイン電極に接続されるように構成される、
装置。 - 前記半導電層および前記導電層は、前記装置が第1時点で前記第1動作モードに設定され、第2の、異なる時点で前記第2動作モードに設定され得るように構成される、請求項1に記載の装置。
- 前記材料は量子ドットを有する、請求項1又は2に記載の装置。
- 前記材料と前記導電層との間に誘電体層が設けられる、請求項1から3のいずれか一項に記載の装置。
- 前記材料と前記半導電層との間に正孔輸送層が設けられる、請求項1から4のいずれか一項に記載の装置。
- 前記材料と前記導電層との間に電子輸送層が設けられる、請求項1から5のいずれか一項に記載の装置。
- 請求項1から6のいずれか一項に記載の装置であって、該装置から放射される光が横方向へ伝搬することを妨げるように構成されたバリア、マイクロレンズ・アレイまたは光ファイバ・フェースプレートのうちの少なくとも1つを有する、装置。
- 前記装置の動作モードを制御するように構成された制御回路を有する、請求項1から7のいずれか一項に記載の装置。
- 複数の装置を有するアレイであって、前記複数の装置のうちの少なくとも1つは、それぞれ、請求項1から8のいずれか一項に記載の装置を有する、アレイ。
- 前記複数の装置のうちの1つ以上の装置の第1サブセットは前記第1動作モードに設定され、前記複数の装置のうちの1つ以上の装置の第2サブセットは前記第2動作モードに設定される、請求項9に記載のアレイ。
- 少なくとも1つの装置が、異なる時点で異なるサブセット内に配置され得る、請求項9または10に記載のアレイ。
- 半導電層と導電層との間に材料を設けることと、
第1動作モードにおいては前記材料が光子放射器として機能するように、前記半導電層と前記導電層との間に電場が加えられ、第2動作モードにおいては前記材料が光子検出器として機能するように、前記導電層によって電場が供給されず、前記半導電層が電界効果トランジスタ内にチャネルを提供するように前記半導電層はソース電極およびドレイン電極に接続されるように、前記半導電層および前記導電層を構成することと、
を有する方法であって、前記半導電層はグラフェンを有し、前記グラフェンはグラフェン電界効果トランジスタを形成する、方法。
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP15173574.3A EP3109907B1 (en) | 2015-06-24 | 2015-06-24 | Device for emitting and detecting photons and method of producing the same |
| EP15173574.3 | 2015-06-24 | ||
| PCT/FI2016/050332 WO2016207483A1 (en) | 2015-06-24 | 2016-05-18 | Device for emitting and detecting photons and method of producing the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2018527742A JP2018527742A (ja) | 2018-09-20 |
| JP6595014B2 true JP6595014B2 (ja) | 2019-10-23 |
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| Application Number | Title | Priority Date | Filing Date |
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| JP2017567242A Active JP6595014B2 (ja) | 2015-06-24 | 2016-05-18 | 光子を放射し検出するためのデバイスおよびそれを製造する方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US10347785B2 (ja) |
| EP (1) | EP3109907B1 (ja) |
| JP (1) | JP6595014B2 (ja) |
| WO (1) | WO2016207483A1 (ja) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10454016B2 (en) * | 2017-05-19 | 2019-10-22 | Raytheon Bbn Technologies Corp. | Number-resolving photon detector with graphene-insulating-superconducting junction |
| US11177411B2 (en) | 2017-10-26 | 2021-11-16 | Emberion Oy | Photosensitive field-effect transistor |
| JP2022031994A (ja) | 2018-12-14 | 2022-02-24 | パナソニックIpマネジメント株式会社 | 光センサ |
| JP7348283B2 (ja) * | 2019-07-01 | 2023-09-20 | 富士フイルム株式会社 | 光検出素子、光検出素子の製造方法およびイメージセンサ |
| JP7589454B2 (ja) * | 2020-06-17 | 2024-11-26 | artience株式会社 | 光電変換素子及び光電変換層形成用組成物 |
| US12299946B2 (en) | 2022-11-28 | 2025-05-13 | Sony Semiconductor Solutions Corporation | Highly efficient active illumination imaging systems and methods |
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| US5247193A (en) * | 1991-02-01 | 1993-09-21 | Olympus Optical Co., Ltd. | Semiconductor insulated gate device with four electrodes |
| US5391896A (en) * | 1992-09-02 | 1995-02-21 | Midwest Research Institute | Monolithic multi-color light emission/detection device |
| US6987259B2 (en) | 2002-05-30 | 2006-01-17 | Dmetrix, Inc. | Imaging system with an integrated source and detector array |
| KR20040076330A (ko) * | 2003-02-25 | 2004-09-01 | 삼성전자주식회사 | 실리콘 광소자 및 이를 적용한 광신호 입출력장치 |
| GB0408960D0 (en) | 2004-04-22 | 2004-05-26 | Cambridge Display Tech Ltd | Displays, drivers and related methods |
| US7598949B2 (en) | 2004-10-22 | 2009-10-06 | New York University | Multi-touch sensing light emitting diode display and method for using the same |
| US8247801B2 (en) * | 2006-03-31 | 2012-08-21 | Imec | Organic semi-conductor photo-detecting device |
| KR100836425B1 (ko) | 2007-02-05 | 2008-06-09 | 삼성에스디아이 주식회사 | 유기 전계 발광표시장치 및 그 구동방법 |
| WO2010033518A1 (en) | 2008-09-16 | 2010-03-25 | Plextronics, Inc. | Integrated organic photovoltaic and light emitting diode device |
| JP5453045B2 (ja) | 2008-11-26 | 2014-03-26 | 株式会社日立製作所 | グラフェン層が成長された基板およびそれを用いた電子・光集積回路装置 |
| KR101594471B1 (ko) | 2009-02-10 | 2016-02-29 | 삼성디스플레이 주식회사 | 박막 트랜지스터 기판 및 그 제조 방법 |
| GB2473240A (en) | 2009-09-04 | 2011-03-09 | Cambridge Display Tech Ltd | A touch screen device using correlated emitter-detector pairs |
| JP5462737B2 (ja) | 2010-01-21 | 2014-04-02 | 株式会社日立製作所 | グラフェン膜が成長された基板およびそれを用いた電子・光集積回路装置 |
| US8410474B2 (en) | 2010-01-21 | 2013-04-02 | Hitachi, Ltd. | Graphene grown substrate and electronic/photonic integrated circuits using same |
| US8320423B2 (en) | 2010-08-24 | 2012-11-27 | Alvin Gabriel Stern | Compact, all solid-state, avalanche photodiode emitter-detector pixel with electronically selectable, passive or active detection mode, for large-scale, high resolution, imaging focal plane arrays |
| JP5629570B2 (ja) * | 2010-12-27 | 2014-11-19 | 株式会社日立製作所 | グラフェン膜と金属電極とが電気的接合した回路装置 |
| ES2369953B1 (es) * | 2011-08-02 | 2012-10-09 | Fundació Institut De Ciències Fotòniques | Plataforma optoelectrónica con conductor a base de carbono y puntos cuánticos y fototransistor que comprende una plataforma de este tipo |
| JP5795527B2 (ja) | 2011-12-20 | 2015-10-14 | 日本電信電話株式会社 | ナノワイヤの作製方法 |
| US9680038B2 (en) * | 2013-03-13 | 2017-06-13 | The Regents Of The University Of Michigan | Photodetectors based on double layer heterostructures |
| KR101481000B1 (ko) * | 2013-05-13 | 2015-01-14 | 경희대학교 산학협력단 | 그래핀 양자점 광 검출기 및 이의 제조 방법 |
| JP2014224904A (ja) | 2013-05-16 | 2014-12-04 | 三星ディスプレイ株式會社Samsung Display Co.,Ltd. | 電気光学装置およびその駆動方法 |
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| Publication number | Publication date |
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| WO2016207483A1 (en) | 2016-12-29 |
| US20180190854A1 (en) | 2018-07-05 |
| EP3109907A1 (en) | 2016-12-28 |
| EP3109907B1 (en) | 2023-08-23 |
| JP2018527742A (ja) | 2018-09-20 |
| US10347785B2 (en) | 2019-07-09 |
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