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JP6809957B2 - A flat cable, a rotary connector device including the flat cable, and a method for manufacturing the flat cable. - Google Patents
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JP6809957B2 - A flat cable, a rotary connector device including the flat cable, and a method for manufacturing the flat cable. - Google Patents

A flat cable, a rotary connector device including the flat cable, and a method for manufacturing the flat cable. Download PDF

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JP6809957B2
JP6809957B2 JP2017065527A JP2017065527A JP6809957B2 JP 6809957 B2 JP6809957 B2 JP 6809957B2 JP 2017065527 A JP2017065527 A JP 2017065527A JP 2017065527 A JP2017065527 A JP 2017065527A JP 6809957 B2 JP6809957 B2 JP 6809957B2
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flat cable
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亮佑 松尾
亮佑 松尾
賢悟 水戸瀬
賢悟 水戸瀬
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Furukawa Electric Co Ltd
Furukawa Automotive Systems Inc
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本発明は、フラットケーブル、フラットケーブルを備える回転コネクタ装置、及びフラットケーブルの製造方法に関し、特に車両用の回転コネクタ装置内に配置される屈曲特性及び製造性に優れるフレキシブルフラットケーブルに関する。 The present invention relates to a flat cable, a rotary connector device including a flat cable, and a method for manufacturing a flat cable, and more particularly to a flexible flat cable which is arranged in a rotary connector device for a vehicle and has excellent bending characteristics and manufacturability.

従来、四輪自動車などの車両において、操舵用のステアリングホイールとステアリングシャフトの連結部に、エアバッグ装置等に電力を供給するための回転コネクタ装置(SRC)が装着されている。回転コネクタ装置は、ステータと、該ステータに回転自在に組み付けられたロテータと、ステータとロテータとによって形成される環状の内部空間に巻かれて収容されたフレキシブルフラットケーブル(FFC)とを備えており、FFCの端部には、当該FFCと外部とを電気的に接続する接続構造体を備えている。 Conventionally, in a vehicle such as a four-wheeled vehicle, a rotary connector device (SRC) for supplying power to an airbag device or the like is attached to a connecting portion between a steering wheel for steering and a steering shaft. The rotary connector device includes a stator, a rotator rotatably assembled to the stator, and a flexible flat cable (FFC) wound and housed in an annular internal space formed by the stator and the rotator. At the end of the FFC, a connection structure for electrically connecting the FFC and the outside is provided.

FFCは、並列配置された複数本の導体と、該複数本の導体を挟み込むように配置された一対の絶縁シートと、該一対の絶縁シート間に設けられた接着剤層とを備え、上記複数の導体、一対の絶縁シート及び接着剤層で構成されるラミネート構造を有している。導体は、例えば、タフピッチ銅、無酸素銅等からなる。また、絶縁シートは、ポリエステル系、ポリウレタン系、ポリアミド系、ポリスチレン系の樹脂からなる接着剤層を有し、複数の導体が挟み込まれた状態で、上記一対の絶縁シートを、接着剤層を介して接着することにより、導体同士、或いは導体と外部とが絶縁される。 The FFC includes a plurality of conductors arranged in parallel, a pair of insulating sheets arranged so as to sandwich the plurality of conductors, and an adhesive layer provided between the pair of insulating sheets. It has a laminated structure composed of a conductor, a pair of insulating sheets, and an adhesive layer. The conductor is made of, for example, tough pitch copper, oxygen-free copper, or the like. Further, the insulating sheet has an adhesive layer made of polyester-based, polyurethane-based, polyamide-based, or polystyrene-based resin, and the pair of insulating sheets are passed through the adhesive layer in a state where a plurality of conductors are sandwiched. By adhering them together, the conductors or the conductors and the outside are insulated from each other.

上記導体としては、例えば、無酸素銅に、0.3wt%以下のSnと0.3wt%以下のIn或いはMgを添加した銅合金、又は、無酸素銅に10wt%以下のAgを添加した銅合金を母材とし、その表面にSnをめっきした平板状の導体に熱処理を行い、引張り強さ350MPa以上、伸び5%以上、導電率70%IACS以上である平角導体が提案されている(特許文献1)。また、タフピッチ銅や無酸素銅といった純銅において、圧延面の(200)面のX線回折強度を高めること、この場合においては同義であるCube方位を高発達させることにより、屈曲特性を改善させることが提案されている(特許文献2)。 Examples of the conductor include a copper alloy obtained by adding 0.3 wt% or less of Sn and 0.3 wt% or less of In or Mg to oxygen-free copper, or copper obtained by adding 10 wt% or less of Ag to oxygen-free copper. A flat conductor having an alloy as a base material and a flat conductor whose surface is plated with Sn is heat-treated to have a tensile strength of 350 MPa or more, an elongation of 5% or more, and a conductivity of 70% IACS or more (patented patent). Document 1). Further, in pure copper such as tough pitch copper and oxygen-free copper, the bending characteristics are improved by increasing the X-ray diffraction intensity of the (200) plane of the rolled surface, and by highly developing the Cube orientation, which is synonymous in this case. Has been proposed (Patent Document 2).

特許第4734695号公報Japanese Patent No. 4734695 特許第3009383号公報Japanese Patent No. 309383

特許文献2のような無酸素銅、或いはタフピッチ銅などのCu純度の高い銅材料を用い、Cube方位の結晶粒を高集積制御した高屈曲性導体並びにその製造方法は既に知られている。しかしながら、このような製造方法では、FFC全体の製造時、すなわちラミネート処理中、もしくはラミネート処理後の熱処理によって導体が再結晶し方位制御(再結晶集合組織)が完了するものであり、導体の製造が完了した段階、すなわちラミネート処理前には加工集合組織を有している。この段階では導体は十分な屈曲性を有してはいない。 A highly flexible conductor in which crystal grains in the Cube orientation are highly integrated and controlled using a copper material having a high Cu purity such as oxygen-free copper as in Patent Document 2 or tough pitch copper, and a method for producing the same are already known. However, in such a manufacturing method, the conductor is recrystallized by the heat treatment during the manufacturing of the entire FFC, that is, during the laminating process or after the laminating process, and the orientation control (recrystallization texture) is completed, and the conductor is manufactured. Has a processed texture before the completion of the laminating process. At this stage, the conductor does not have sufficient flexibility.

回転コネクタ装置は小型化のニーズがあり、内部のフレキシブルフラットケーブルはより小さい屈曲半径で耐久性を有することを求められる。タフピッチ銅を代表とする純銅の一般製法にて製造された硬銅、軟銅は、現在回転コネクタ装置のケーブル導体として使用されているが、装置の小型化のニーズに伴い、より屈曲耐性の高い導体が求められている。
また、小型化と同時に多チャンネル化のニーズに応えるためにフレキシブルフラットケーブルに用いられる導体の幅は減少傾向にある。そのため、フレキシブルフラットケーブルの製造難度は上がってきており、製造性の改善に寄与する導体が求められている。銅合金製の導体を用いれば製造性の改善に対しては有効であるが、銅合金製の導体は純銅製よりも電気抵抗が高いという問題がある。
また、タフピッチ銅の中で最も屈曲性に優れるのはCube方位が高集積した再結晶材(軟銅)であり、今後の小型化のニーズに対応できる導体の素材として有望である。しかしながら軟銅の機械的強度は集合組織の形成に伴って一般的な軟銅よりも下がることが知られており、狭幅化に伴う断面積の減少も伴い材料強度が著しく低下するためフラットケーブルの製造性への悪影響が顕著化することが想定される。
There is a need for miniaturization of rotary connector devices, and internal flexible flat cables are required to have durability with a smaller bending radius. Hard copper and annealed copper manufactured by the general manufacturing method of pure copper typified by tough pitch copper are currently used as cable conductors for rotary connector devices, but with the need for miniaturization of devices, conductors with higher bending resistance Is required.
In addition, the width of conductors used in flexible flat cables is decreasing in order to meet the needs for miniaturization and multi-channels. Therefore, the manufacturing difficulty of flexible flat cables is increasing, and conductors that contribute to the improvement of manufacturability are required. Although a copper alloy conductor is effective for improving manufacturability, there is a problem that a copper alloy conductor has a higher electric resistance than a pure copper conductor.
Further, among the tough pitch coppers, the recrystallized material (annealed copper) having a highly integrated Cube orientation is the most excellent in flexibility, and is promising as a conductor material that can meet the needs for miniaturization in the future. However, it is known that the mechanical strength of annealed copper is lower than that of general annealed copper as the texture is formed, and the material strength is significantly reduced due to the decrease in cross-sectional area due to the narrowing of the width. It is expected that the adverse effects on sexuality will become significant.

また、従来、FFCの絶縁シートの材料にはポリエチレンテレフタレート(PET)及びその内側により融点の低い接着層が設けられた樹脂が用いられることが多く、このPETを例えばポリイミド(PI)に変更し、先述したCube方位を高発達させることが出来る程度のラミネートの高温熱処理が可能となるが、コスト競争力が大きく低下し、製品競争力が劣る。一方、PETは再結晶処理に相当する高温処理をすると接着層において流動を伴うような溶融を引き起こしてしまうため、ラミネート時に再結晶処理を施すのであればPET製絶縁シートを用いるのは困難である。また、ラミネート処理の加熱時にCube方位が高配向する再結晶が起きると導体の強度が極端に低下するため、ラミネート処理制御の困難化をもたらすと共に、その後のFFC−コネクタ接合時や回転コネクタ装置へのFFC収容時の形状変化および破導体断の原因にもなり、生産性を低下させる。 Further, conventionally, polyethylene terephthalate (PET) and a resin provided with an adhesive layer having a lower melting point inside the polyethylene terephthalate (PET) are often used as the material of the insulating sheet of FFC, and this PET is changed to, for example, polyimide (PI). High-temperature heat treatment of the laminate to the extent that the above-mentioned Cube orientation can be highly developed becomes possible, but the cost competitiveness is greatly reduced and the product competitiveness is inferior. On the other hand, it is difficult to use a PET insulating sheet if the recrystallization treatment is performed at the time of laminating because PET causes melting that accompanies flow in the adhesive layer when the high temperature treatment corresponding to the recrystallization treatment is performed. .. In addition, if recrystallization occurs in which the Cube orientation is highly oriented during heating of the laminating process, the strength of the conductor is extremely reduced, which makes it difficult to control the laminating process, and at the time of subsequent FFC-connector joining or rotary connector device. It also causes a change in shape and breakage of the broken conductor when the FFC is housed, which reduces productivity.

本発明の目的は、製造性、生産性及び導電性を損なうこと無く、従来よりも屈曲特性に優れ、長寿命化を実現することができるフラットケーブル、該フラットケーブルを備える回転コネクタ装置、及びフラットケーブルの製造方法を提供することにある。 An object of the present invention is a flat cable having excellent bending characteristics and a longer life than before without impairing manufacturability, productivity and conductivity, a rotary connector device provided with the flat cable, and a flat. The purpose is to provide a method for manufacturing a cable.

本発明者は、鋭意研究を重ねた結果、硬銅の集合組織における結晶粒の適切な組織制御を行うことで、屈曲中に長寿命を示すCube方位高集積化が可能な硬銅を導体の材料として用い、フラットケーブルや回転コネクタの製造時に硬銅強度を維持して生産性を担保すると共に、フラットケーブル屈曲時には導体におけるCube方位粒が優先成長することで、従来よりも高屈曲性を付与し、長寿命化を実現できることを見出した。 As a result of intensive research, the present inventor has made a conductor of hard copper capable of highly integrating the Cube orientation, which shows a long life during bending, by appropriately controlling the structure of the crystal grains in the texture of the hard copper. Used as a material, it maintains the strength of hard copper when manufacturing flat cables and rotary connectors to ensure productivity, and when the flat cable is bent, the Cube orientation grains in the conductor grow preferentially, giving higher flexibility than before. However, it was found that a longer life can be realized.

すなわち、本発明の要旨構成は以下の通りである。
(1)タフピッチ銅及び無酸素銅のいずれかからなり、且つ{123}<634>の方位に許容ずれ角0°〜12.5°で配向する結晶粒の面積率が25%以上である圧延加工集合組織を有する所定数の導体を備えることを特徴とする、フラットケーブル。
(2)前記導体の厚み方向における結晶粒の寸法の平均値が3μm以下であり、且つ、前記導体の幅方向における前記結晶粒の寸法を前記導体の厚み方向における前記結晶粒の寸法で除した値の平均値が3以上であることを特徴とする、上記(1)記載のフラットケーブル。
(3)前記導体の0.2%耐力が400MPa以上であり、且つ160〜200℃、0.1s〜5sでの加熱処理後の前記導体の0.2%耐力が300MPa以上であることを特徴とする、上記(1)又は(2)記載のフラットケーブル。
(4)160〜200℃、0.1s〜5sの加熱条件で融解可能な材料からなる接着層と、前記加熱条件で融解しない材料からなる一対の絶縁シートとを更に備え、
前記導体は、前記接着層を介して前記一対の絶縁シートに挟み込まれるように配置されてラミネート構造を構成していることを特徴とする、上記(1)〜(3)のいずれかに記載のフラットケーブル。
(5)前記ベース層が、ポリエチレンテレフタレートからなることを特徴とする、請求項1〜4のいずれか1項に記載のフラットケーブル。
(6)50℃以上、ストローク長さ10mm〜15mm、屈曲速度10〜500回転/分の試験条件下にてIPC屈曲試験を行った結果、前記導体は、10万回屈曲試験後の被屈曲部の{001}<100>の方位に配向する結晶粒の面積率が75%以上である集合組織を有することを特徴とする、上記(1)〜(4)のいずれかに記載のフラットケーブル。
(7)上記(1)〜(5)のいずれかに記載のフラットケーブルを備える回転コネクタ装置。
(8)タフピッチ銅及び無酸素銅のいずれかからなる所定数の導体を備えるフラットケーブルの製造方法であって、
タフピッチ銅及び無酸素銅のいずれかからなる材料の鋳造工程、熱間圧延工程及び冷間圧延工程の後、熱処理工程と、最終圧延工程とを有し、
前記熱処理工程における熱処理条件が、200〜700℃、15s〜5hであり、
前記最終圧延工程における圧延率が75%以上である、
ことを特徴とする、フラットケーブルの製造方法。
(9)タフピッチ銅及び無酸素銅のいずれかからなる所定数の導体を備えるフラットケーブルの製造方法であって、
タフピッチ銅及び無酸素銅のいずれかからなる材料の鋳造工程、熱間圧延工程及び冷間圧延工程の後、第1熱処理工程と、第1圧延工程と、第2熱処理工程と、最終圧延工程とを有し、
前記第1熱処理工程における熱処理条件が、200〜700℃、15s〜5hであり、
前記第1圧延工程における圧延率が、75%以下であり、
前記第2熱処理工程における熱処理条件が、200〜700℃、15s〜5hであり、
前記最終圧延工程における圧延率が75%以上である、
ことを特徴とする、フラットケーブルの製造方法。
(10)前記最終圧延工程の後、当該最終圧延工程で得られた所定数の導体を、160〜200℃、0.1s〜5sの加熱条件で融解可能な接着剤を介して、前記加熱条件で融解しない2枚の絶縁シートで挟み込んでラミネート構造を形成するラミネート処理工程を更に有し、
前記ラミネート処理工程における加熱条件が、160〜200℃、0.1s〜5sであることを特徴とする、上記(8)又は(9)記載のフラットケーブルの製造方法。
That is, the gist structure of the present invention is as follows.
(1) Rolling consisting of either tough pitch copper or oxygen-free copper and having an area ratio of crystal grains of 25% or more oriented in the direction of {123} <634> with an allowable deviation angle of 0 ° to 12.5 °. A flat cable comprising a predetermined number of conductors having a processed texture.
(2) The average value of the crystal grain dimensions in the thickness direction of the conductor is 3 μm or less, and the grain size in the width direction of the conductor is divided by the crystal grain size in the thickness direction of the conductor. The flat cable according to (1) above, wherein the average value of the values is 3 or more.
(3) The conductor is characterized in that the 0.2% proof stress is 400 MPa or more, and the 0.2% proof stress of the conductor after heat treatment at 160 to 200 ° C. and 0.1 s to 5 s is 300 MPa or more. The flat cable according to (1) or (2) above.
(4) An adhesive layer made of a material that can be melted under heating conditions of 160 to 200 ° C. and 0.1s to 5s, and a pair of insulating sheets made of a material that does not melt under the heating conditions are further provided.
The conductor according to any one of (1) to (3) above, wherein the conductor is arranged so as to be sandwiched between the pair of insulating sheets via the adhesive layer to form a laminated structure. Flat cable.
(5) The flat cable according to any one of claims 1 to 4, wherein the base layer is made of polyethylene terephthalate.
(6) As a result of performing an IPC bending test under test conditions of 50 ° C. or higher, a stroke length of 10 mm to 15 mm, and a bending speed of 10 to 500 rotations / minute, the conductor is a bent portion after a 100,000 times bending test. The flat cable according to any one of (1) to (4) above, wherein the flat cable has an texture in which the area ratio of the crystal grains oriented in the direction of {001} <100> is 75% or more.
(7) A rotary connector device including the flat cable according to any one of (1) to (5) above.
(8) A method for manufacturing a flat cable having a predetermined number of conductors made of either tough pitch copper or oxygen-free copper.
It has a heat treatment step and a final rolling step after a casting step, a hot rolling step and a cold rolling step of a material made of either tough pitch copper or oxygen-free copper.
The heat treatment conditions in the heat treatment step are 200 to 700 ° C. and 15s to 5h.
The rolling ratio in the final rolling step is 75% or more.
A method of manufacturing a flat cable, which is characterized in that.
(9) A method for manufacturing a flat cable having a predetermined number of conductors made of either tough pitch copper or oxygen-free copper.
After the casting step, hot rolling step and cold rolling step of the material consisting of tough pitch copper or oxygen-free copper, the first heat treatment step, the first rolling step, the second heat treatment step, and the final rolling step Have,
The heat treatment conditions in the first heat treatment step are 200 to 700 ° C. and 15s to 5h.
The rolling ratio in the first rolling step is 75% or less.
The heat treatment conditions in the second heat treatment step are 200 to 700 ° C. and 15s to 5h.
The rolling ratio in the final rolling step is 75% or more.
A method of manufacturing a flat cable, which is characterized in that.
(10) After the final rolling step, a predetermined number of conductors obtained in the final rolling step are melted under heating conditions of 160 to 200 ° C. and 0.1s to 5s via an adhesive that can be melted under the heating conditions. It further has a laminating process of forming a laminating structure by sandwiching it between two insulating sheets that do not melt in.
The method for producing a flat cable according to (8) or (9) above, wherein the heating conditions in the laminating process are 160 to 200 ° C. and 0.1 s to 5 s.

本発明のフラットケーブルによれば、導体がタフピッチ銅及び無酸素銅のいずれかからなり、{123}<634>の方位に許容ずれ角0°〜12.5°で配向する結晶粒の面積率が25%以上である圧延加工集合組織を有するので、硬銅の強度を有しており、フラットケーブルや回転コネクタ装置の製造時に導体に外力が付与される場合に導体の変形及び破断を防止することができる。また、回転コネクタ装置の車両への組み付け後、車両においてステアリングホイールの操舵がなされ、時計回り或いは反時計回りの回転に伴って回転コネクタ装置内のフラットケーブルが繰り返して屈曲運動する場合に、屈曲を与えられる比較的早い段階でCube方位の結晶粒が優先的に成長することによりフラットケーブルの屈曲特性を向上することができ、耐久性、ひいては信頼性、安全性を向上したフラットケーブルを提供することが可能となる。 According to the flat cable of the present invention, the conductor is made of either tough pitch copper or oxygen-free copper, and the area ratio of crystal grains oriented in the direction of {123} <634> with an allowable deviation angle of 0 ° to 12.5 °. Has a rolled texture of 25% or more, so it has the strength of hard copper and prevents deformation and breakage of the conductor when an external force is applied to the conductor during the manufacture of flat cables and rotary connector devices. be able to. Further, when the steering wheel is steered in the vehicle after the rotary connector device is assembled to the vehicle and the flat cable in the rotary connector device repeatedly bends as the rotary connector device rotates clockwise or counterclockwise, bending is performed. To provide a flat cable in which the bending characteristics of the flat cable can be improved by preferentially growing the crystal grains in the Cube orientation at a relatively early stage, and the durability, reliability, and safety are improved. Is possible.

また、本発明のフラットケーブルの製造方法によれば、導体の組織制御を行うべく、鋳造工程、熱間圧延工程及び冷間圧延工程を従来の導体の製造工程と共通とし、その後の熱処理工程における熱処理条件及び最終圧延工程における圧延率を規定しているので、従来の導体の製造工程の一部を変更するだけで本発明のフラットケーブルを得ることができ、コスト増大を抑制することが可能となる。また、屈曲特性向上によって設計の自由度が増大するため、屈曲半径を小径化させることによる回転コネクタ装置の小径化、導体の狭幅化による多チャンネル化若しくは同一チャンネルによるコネクタ薄型化、又は多チャンネル化によるフラットケーブル枚数の削減を実現することができる。また、本発明のフラットケーブルの導体がタフピッチ銅又は無酸素銅であることから、純銅の優れた導電性を有しており、特許文献1のような合金化による導電率の低下を伴うことはなく、設計の自由度を制限することなく導体の断面積を減らすことができる。 Further, according to the flat cable manufacturing method of the present invention, in order to control the structure of the conductor, the casting step, the hot rolling step and the cold rolling step are made common with the conventional conductor manufacturing step, and in the subsequent heat treatment step. Since the heat treatment conditions and the rolling ratio in the final rolling process are specified, the flat cable of the present invention can be obtained by changing only a part of the conventional conductor manufacturing process, and the cost increase can be suppressed. Become. In addition, since the degree of freedom in design increases due to the improvement of bending characteristics, the diameter of the rotary connector device is reduced by reducing the bending radius, the number of channels is increased by narrowing the conductor, or the connector is thinned by the same channel, or multiple channels. It is possible to reduce the number of flat cables due to the conversion. Further, since the conductor of the flat cable of the present invention is tough pitch copper or oxygen-free copper, it has excellent conductivity of pure copper, and it is not accompanied by a decrease in conductivity due to alloying as in Patent Document 1. It is possible to reduce the cross-sectional area of the conductor without limiting the degree of design freedom.

また、本発明のフラットケーブルは、ステアリング・ローリング・コネクタ(SRC)と称される回転コネクタ装置のみならず、例えばルーフハーネス、ドアハーネス、フロアハーネス等の自動車用部品、折り畳み式携帯電話の折り曲げ部、デジタルカメラやプリンターヘッドなどの可動部、HDD(Hard Disk Drive)、DVD(Digital Versatile Disc)、Blu−ray(登録商標) Disc、CD(Compact Disc)の駆動部などの配線体として有用である。 Further, the flat cable of the present invention includes not only a rotary connector device called a steering rolling connector (SRC), but also automobile parts such as a roof harness, a door harness, and a floor harness, and a bent portion of a foldable mobile phone. It is useful as a wiring body for moving parts such as digital cameras and printer heads, HDD (Hard Disk Drive), DVD (Digital Versatile Disc), Blu-ray (registered trademark) Disc, and CD (Compact Disc) drive parts. ..

本発明の実施形態に係るフラットケーブルの構成を示す幅方向断面図である。It is a cross-sectional view in the width direction which shows the structure of the flat cable which concerns on embodiment of this invention. 図1のフラットケーブルの好適な例を示す部分拡大断面図である。It is a partially enlarged sectional view which shows a preferable example of the flat cable of FIG.

以下、本発明の実施形態を図面を参照しながら詳細に説明する。 Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

[フラットケーブルの構成]
本実施形態のフラットケーブル1は、図1に示すように、例えば複数の導体11−1,11−2,11−3,11−4,11−5,11−6(所要数の導体)と、該複数の導体を挟み込むように配置された一対の絶縁シート12,13と、一対の絶縁シート12,13間に設けられた接着層14とを備える。本実施形態のフラットケーブル1は、例えばフレキシブルフラットケーブル(FFC)である。
[Flat cable configuration]
As shown in FIG. 1, the flat cable 1 of the present embodiment includes, for example, a plurality of conductors 11-1, 11-2, 11-3, 11-4, 11-5, 11-6 (required number of conductors). A pair of insulating sheets 12 and 13 arranged so as to sandwich the plurality of conductors and an adhesive layer 14 provided between the pair of insulating sheets 12 and 13 are provided. The flat cable 1 of the present embodiment is, for example, a flexible flat cable (FFC).

導体11−1〜11−6は、接着層14を介して一対の絶縁シート12,13に挟み込まれるように配置されてラミネート構造を構成している。この導体11−1〜11−6は、圧延面の面内方向がほぼ同一となるように並べて配置されており、これら導体の一方の圧延面側に絶縁シート12が設けられ、他方の圧延面側に絶縁シート13が設けられている。導体11−1〜11−6は、幅0.3mm〜15mm、厚さ0.02mm〜0.065mmである。導体は、6〜30枚(6〜30チャンネル)であり、用途に応じて4〜6枚(4〜6チャンネル)であり、特に大電流用途の場合、1枚(1チャンネル)である。 The conductors 11-1 to 11-6 are arranged so as to be sandwiched between the pair of insulating sheets 12 and 13 via the adhesive layer 14 to form a laminated structure. The conductors 11-1 to 11-6 are arranged side by side so that the in-plane directions of the rolled surfaces are substantially the same, and an insulating sheet 12 is provided on one of the rolled surfaces of these conductors and the other rolled surface. An insulating sheet 13 is provided on the side. The conductors 11-1 to 11-6 have a width of 0.3 mm to 15 mm and a thickness of 0.02 mm to 0.065 mm. The number of conductors is 6 to 30 (6 to 30 channels), 4 to 6 (4 to 6 channels) depending on the application, and especially 1 (1 channel) in the case of a large current application.

一対の絶縁シート12,13は、接着層14及び/又は複数の導体11−1〜11−6との良好な密着性を発現することができる樹脂からなる。絶縁シート12,13は、例えば幅6mm〜15mm、厚さ0.01mm〜0.05mmである。絶縁シート12,13は、接着層を融解する際の後述する所定の加熱条件で融解しない材料からなり、例えば融点が200℃〜300℃であるポリエチレンテレフタレートからなるのが好ましい。 The pair of insulating sheets 12 and 13 are made of a resin capable of exhibiting good adhesion to the adhesive layer 14 and / or a plurality of conductors 11-1 to 11-6. The insulating sheets 12 and 13 have, for example, a width of 6 mm to 15 mm and a thickness of 0.01 mm to 0.05 mm. The insulating sheets 12 and 13 are made of a material that does not melt under predetermined heating conditions described later when melting the adhesive layer, and are preferably made of polyethylene terephthalate having a melting point of, for example, 200 ° C. to 300 ° C.

接着層14は、複数の導体11−1〜11−6を埋設するのに十分な厚みを有しており、絶縁シート12,13によって挟持されている。接着層14は、160〜200℃、0.1s〜5sの加熱条件で融解可能な材料からなり、例えばポリエステル系樹脂からなる。 The adhesive layer 14 has a sufficient thickness for embedding the plurality of conductors 11-1 to 11-6, and is sandwiched between the insulating sheets 12 and 13. The adhesive layer 14 is made of a material that can be melted under heating conditions of 160 to 200 ° C. and 0.1 s to 5 s, and is made of, for example, a polyester resin.

好適な例として、絶縁シート22が、後述する加熱条件で融解可能な層状の接着部22aと、同加熱条件で融解しない層状のベース部22bとを有し、絶縁シート23が、所定の加熱条件で融解可能な層状の接着部23aと、該加熱条件で融解しない層状のベース部23bとをそれぞれ有していてもよい。この場合、接着部22a,23aが融解して一体化することにより、ベース部22b,23b間に接着層が形成される。 As a preferred example, the insulating sheet 22 has a layered adhesive portion 22a that can be melted under heating conditions described later and a layered base portion 22b that does not melt under the same heating conditions, and the insulating sheet 23 has a predetermined heating condition. It may have a layered adhesive portion 23a that can be melted in and a layered base portion 23b that does not melt under the heating conditions. In this case, the adhesive layers 22a and 23a are melted and integrated to form an adhesive layer between the base portions 22b and 23b.

上記のように構成されるフラットケーブル1は、好ましくは回転コネクタ装置に適用される。回転コネクタ装置は、不図示のステータとロテータとによって形成される環状の内部空間に巻かれて収容されたフラットケーブル1を備える。例えばこの回転コネクタ装置において、フラットケーブル1の長手方向の中間部分に、湾曲して折り返された不図示の折り返し部が設けられ、フラットケーブル1は、折り返し部にて屈曲を維持した状態で巻き締め又は巻き戻しされる。そして、上記折り返し部は、所定の屈曲半径、例えば4mm〜8mmを維持した状態で、折り返しを伴って巻き締め又は巻き戻しされる。 The flat cable 1 configured as described above is preferably applied to a rotary connector device. The rotary connector device includes a flat cable 1 wound and housed in an annular internal space formed by a stator and a rotator (not shown). For example, in this rotary connector device, a folded-back portion (not shown) that is curved and folded back is provided at an intermediate portion in the longitudinal direction of the flat cable 1, and the flat cable 1 is wound while maintaining bending at the folded-back portion. Or it is rewound. Then, the folded-back portion is wound or rewound with folding back while maintaining a predetermined bending radius, for example, 4 mm to 8 mm.

[導体の化学組成及び構造]
本発明で使用される導体の材料は、純銅であり、タフピッチ銅(TPC:Tough Pitch Copper)及び無酸素銅(OFC:Oxygen−Free Copper)のいずれかからなる。タフピッチ銅は、Cu≧99.90mass%、O(酸素)がJIS規定はないが一般的に0.01〜0.03mass%、及び残部を不可避不純物からなる。無酸素銅は、Cu≧99.96mass%、及び残部を不可避不純物からなる。
[Chemical composition and structure of conductor]
The material of the conductor used in the present invention is pure copper and is composed of either tough pitch copper (TPC: Tough Pitch Copper) or oxygen-free copper (OFC: Oxygen-Free Copper). The tough pitch copper is composed of Cu ≧ 99.90 mass%, O (oxygen) of 0.01 to 0.03 mass% in general although there is no JIS regulation, and the balance of unavoidable impurities. Oxygen-free copper consists of Cu ≧ 99.96 mass% and the balance is unavoidable impurities.

また、上記導体は、{123}<634>の方位(S方位ともいう)に許容ずれ角0°〜12.5°で配向する結晶粒の面積率が25%以上である圧延加工集合組織を有している。許容ずれ角0°〜12.5°で{123}<634>の方位に配向する結晶粒とは、{123}<634>の方位に配向する結晶粒、及び{123}<634>の方位に対して12.5°以内の許容ずれ角で配向する結晶粒の双方を示す。該集合組織において{123}<634>の方位に許容ずれ角0°〜12.5°で配向する結晶粒の面積率が上記範囲内の値であると、フラットケーブルの屈曲時に導体におけるCube方位粒を優先的に成長させることができ、その成長が望めない導体よりも高屈曲性を付与することができる。 Further, the conductor has a rolled texture in which the area ratio of crystal grains oriented at a permissible deviation angle of 0 ° to 12.5 ° in the orientation (also referred to as S orientation) of {123} <634> is 25% or more. Have. The crystal grains oriented in the direction of {123} <634> with an allowable deviation angle of 0 ° to 12.5 ° are the crystal grains oriented in the direction of {123} <634> and the orientation of {123} <634>. Both of the crystal grains oriented with an allowable deviation angle within 12.5 ° are shown. When the area ratio of the crystal grains oriented at the allowable deviation angle of 0 ° to 12.5 ° in the orientation of {123} <634> in the texture is a value within the above range, the Cube orientation in the conductor when the flat cable is bent. Grains can be grown preferentially, and higher flexibility can be imparted than conductors whose growth cannot be expected.

また、上記導体の幅方向をTDとしたとき、上記導体の厚み方向における結晶粒の寸法の平均値は3μm以下であり、且つ、導体の幅方向における結晶粒の寸法を導体の厚み方向における当該結晶粒の寸法で除した値の平均値が3以上である。導体の厚み方向における結晶粒寸法の平均値が3μm以下であると耐力を更に向上することができる。また、導体の幅方向における結晶粒の寸法を導体の厚み方向における当該結晶粒の寸法で除した値の平均値が3未満であると、耐力が低下し、好ましくない。よって本発明では、導体の厚み方向における結晶粒の寸法の平均値、及び上記導体の幅方向における当該結晶粒の寸法を上記導体の厚み方向における前記結晶粒の寸法で除した値の平均値を、それぞれ上記範囲内の値とする。 Further, when the width direction of the conductor is TD, the average value of the grain size in the thickness direction of the conductor is 3 μm or less, and the size of the crystal grain in the width direction of the conductor is the thickness direction of the conductor. The average value of the values divided by the size of the crystal grains is 3 or more. When the average value of the crystal grain size in the thickness direction of the conductor is 3 μm or less, the proof stress can be further improved. Further, if the average value obtained by dividing the size of the crystal grains in the width direction of the conductor by the size of the crystal grains in the thickness direction of the conductor is less than 3, the yield strength is lowered, which is not preferable. Therefore, in the present invention, the average value of the crystal grain dimensions in the thickness direction of the conductor and the average value of the crystal grain dimensions in the width direction of the conductor divided by the crystal grain dimensions in the thickness direction of the conductor are used. , Each value is within the above range.

[導体の製造方法]
上述の導体の製造方法では、先ず、[1]溶解及び鋳造、[2]熱間圧延、[3]冷間圧延、[4]熱処理、[5]最終圧延、の各工程を経て導体を製造し、所望幅のスリット切断を実施して断面積が0.03mm以下、好ましくは0.010mm〜0.0195mmである導体を複数個準備する。この所望断面積は信号系導体においてであり、大電流用途はこの限りでない。最終圧延後の導体幅は、例えば0.3mm〜0.8mmであり、導体厚さは、例えば0.02mm〜0.065mmである。尚、後述するプロセス1〜6では、[1]溶解及び鋳造、[2]熱間圧延、[3]冷間圧延、[4]熱処理、及び[5]最終圧延の5工程を共通条件とし、プロセス3〜6では[4]熱処理の後であって[5 ]最終圧延の前に、他の熱処理及び他の圧延の2工程を更に追加している。
[Conductor manufacturing method]
In the above-mentioned conductor manufacturing method, the conductor is first manufactured through the steps of [1] melting and casting, [2] hot rolling, [3] cold rolling, [4] heat treatment, and [5] final rolling. Then, slit cutting with a desired width is performed to prepare a plurality of conductors having a cross-sectional area of 0.03 mm 2 or less, preferably 0.010 mm 2 to 0.0195 mm 2 . This desired cross-sectional area is in a signal system conductor, and is not limited to large current applications. The conductor width after final rolling is, for example, 0.3 mm to 0.8 mm, and the conductor thickness is, for example, 0.02 mm to 0.065 mm. In steps 1 to 6, which will be described later, the five steps of [1] melting and casting, [2] hot rolling, [3] cold rolling, [4] heat treatment, and [5] final rolling are common conditions. In processes 3 to 6, two additional steps of another heat treatment and another rolling are added after [4] heat treatment and before [5] final rolling.

[1]溶解及び鋳造
溶解及び鋳造は、上述した同合金組成になるように各成分の分量を調整して溶製し、厚さ100mm〜200mmの鋳塊を製造する。
[1] Melting and Casting In melting and casting, the amount of each component is adjusted and melted so as to have the same alloy composition as described above, and an ingot having a thickness of 100 mm to 200 mm is produced.

[2]熱間圧延
次いで、上記で製造された鋳塊を600〜1000℃で熱間圧延して、厚さ10mm〜20mmの板材を作製する。
[2] Hot Rolling Next, the ingot produced above is hot-rolled at 600 to 1000 ° C. to prepare a plate material having a thickness of 10 mm to 20 mm.

[3]冷間圧延
更に、熱間圧延処理後の板材を冷間圧延して、厚さ0.04mm〜1.2mmの導体を作製する。本冷間圧延工程後、後述する熱処理前に、切削加工などの任意の加工処理を行うことができるが、値熱処理は行わない。
[3] Cold Rolling Further, the plate material after the hot rolling treatment is cold-rolled to produce a conductor having a thickness of 0.04 mm to 1.2 mm. After the main cold rolling step and before the heat treatment described later, any processing such as cutting can be performed, but the value heat treatment is not performed.

[4]熱処理
次に、熱処理条件200〜700℃、15s〜5hで、導体に熱処理を施す。20μm以下の再結晶粒径に制御にする熱処理が好ましい。
[4] Heat treatment Next, the conductor is heat-treated under heat treatment conditions of 200 to 700 ° C. for 15s to 5h. A heat treatment that controls the recrystallization particle size to 20 μm or less is preferable.

[5]最終圧延
その後、熱処理後の導体に最終の冷間圧延を施して、厚さ0.02mm〜0.065mmの導体を作製する。最終圧延の圧延率(板圧減少率)は、75%以上、好ましくは75〜99%である。これにより、導体に{123}<634>の方位に許容ずれ角0°〜12.5°で配向する結晶粒の面積率が25%以上である圧延加工集合組織が形成される。また、上記[4]にて再結晶させた材料は本最終圧延によりその結晶粒が扁平し、導体の厚み方向における結晶粒の寸法の平均値は3μm以下となる。更に、導体の幅方向における結晶粒の寸法を導体の厚み方向における当該結晶粒の寸法で除した値の平均値が3以上となる。
[5] Final Rolling After that, the heat-treated conductor is subjected to final cold rolling to prepare a conductor having a thickness of 0.02 mm to 0.065 mm. The rolling rate (plate pressure reduction rate) of the final rolling is 75% or more, preferably 75 to 99%. As a result, a rolled texture is formed on the conductor in which the area ratio of the crystal grains oriented in the direction of {123} <634> with an allowable deviation angle of 0 ° to 12.5 ° is 25% or more. Further, the crystal grains of the material recrystallized in the above [4] are flattened by the final rolling, and the average value of the crystal grain dimensions in the thickness direction of the conductor is 3 μm or less. Further, the average value of the values obtained by dividing the size of the crystal grains in the width direction of the conductor by the size of the crystal grains in the thickness direction of the conductor is 3 or more.

[6]その他
上記[4]熱処理の後であって上記[5]最終圧延の前に、他の圧延及び他の熱処理の2工程を追加してもよい。具体的には、[1]溶解及び鋳造、[2]熱間圧延及び[3]冷間圧延を行った後、[4]熱処理(1回目熱処理)、上記他の圧延(1回目圧延)、上記他の熱処理(2回目熱処理)及び[5]最終圧延(2回目熱処理)の各工程をこの順に経て、導体が製造される。
[6] Others Two steps of another rolling and another heat treatment may be added after the above [4] heat treatment and before the above [5] final rolling. Specifically, after performing [1] melting and casting, [2] hot rolling and [3] cold rolling, [4] heat treatment (first heat treatment), the above-mentioned other rolling (first rolling), A conductor is manufactured through each of the above-mentioned other heat treatment (second heat treatment) and [5] final rolling (second heat treatment) steps in this order.

この場合、[4]熱処理(1回目熱処理)の熱処理条件は、200〜700℃、15s〜5hであり、上記他の圧延(1回目圧延)の圧延率は75%以下である。1回目圧延の圧延率が75%を超えると、その後の2回目熱処理時に{001}<100>(Cube方位)に配向する結晶粒が成長する。一度熱処理にて{001}<100>が配向してしまうと次の熱処理においては{001}<100>の発達は望めないため、本発明で規定する範囲内の組織制御は不可能となる。よって、1回目圧延の圧延率を上記範囲内の値とする。 In this case, the heat treatment conditions of the [4] heat treatment (first heat treatment) are 200 to 700 ° C. and 15s to 5h, and the rolling ratio of the other rolling (first rolling) is 75% or less. When the rolling ratio of the first rolling exceeds 75%, crystal grains oriented in {001} <100> (Cube orientation) grow during the subsequent second heat treatment. Once {001} <100> is oriented in the heat treatment, the development of {001} <100> cannot be expected in the next heat treatment, so that the structure control within the range specified in the present invention becomes impossible. Therefore, the rolling ratio of the first rolling is set to a value within the above range.

また、上記他の熱処理(2回目熱処理)の熱処理条件は、200〜700℃、15s〜5hであり、最終圧延(2回目圧延)の圧延率は75%以上である。2回目圧延の圧延率が75%以下であると、2回目圧延後の導体における{123}<634>の方位に配向する結晶粒の面積率が低下し、フラットケーブルの屈曲時に長寿命を示すCube方位集積を十分に発生させることができず、好ましくない。よって、2回目圧延の圧延率を上記範囲内の値とする。 The heat treatment conditions for the other heat treatment (second heat treatment) are 200 to 700 ° C. and 15s to 5h, and the rolling ratio of the final rolling (second rolling) is 75% or more. When the rolling ratio of the second rolling is 75% or less, the area ratio of the crystal grains oriented in the direction of {123} <634> in the conductor after the second rolling decreases, and the flat cable exhibits a long life when bent. Cube orientation accumulation cannot be sufficiently generated, which is not preferable. Therefore, the rolling ratio of the second rolling is set to a value within the above range.

[フラットケーブルの製造方法]
本実施形態に係るフラットケーブルの製造方法では、導体が上記のような条形成工程で製造された場合、スリット切断を施し、幅0.3mm〜15mm、幅方向断面積が0.02mm以下である導体を所要数準備する。この所望断面積は信号系導体(幅0.3〜2mm)においてであり、大電流用途(幅≧2mm)はこの限りでない。そして、所要数の導体の主面の両側に絶縁シートを配置し、これら所要数の導体一本あたりに所定の張力を付与しながら、上記所要数の導体を接着剤を介して一対の絶縁シートで挟み込む。そして、所要数の導体、接着剤及び一対の絶縁シートからなる積層体をプレスしてラミネート処理する。
[Manufacturing method of flat cable]
In the method for manufacturing a flat cable according to the present embodiment, when the conductor is manufactured by the strip forming step as described above, slit cutting is performed so that the width is 0.3 mm to 15 mm and the cross-sectional area in the width direction is 0.02 mm 2 or less. Prepare the required number of conductors. This desired cross-sectional area is in a signal system conductor (width 0.3 to 2 mm), and is not limited to large current applications (width ≥ 2 mm). Then, insulating sheets are arranged on both sides of the main surface of the required number of conductors, and while applying a predetermined tension to each of the required number of conductors, the required number of conductors are attached to the pair of insulating sheets via an adhesive. Sandwich with. Then, a laminate composed of a required number of conductors, an adhesive, and a pair of insulating sheets is pressed and laminated.

具体的には、上記ラミネート処理では、上記最終圧延工程の後、160〜200℃、0.1s〜5sの加熱条件で融解可能な接着剤を介して、上記加熱条件で融解しない2つの絶縁シートで上記最終圧延工程で得られた所定数の導体を挟み込んでラミネート構造を形成する。本ラミネート処理では、例えば一対のロール間で積層体を挟持し、ラミネート処理時の加熱条件(ロール温度)は、160〜200℃、0.1s〜5sであるのが好ましく、160〜200℃、0.5s〜5sであるのがより好ましい。ラミネート処理時の加熱条件が上記範囲内の値であると、PETなどの融点が低い樹脂からなる絶縁シートを用いても、絶縁シートがラミネート処理時に融解することが無く、コストの増大を抑えつつ生産性を向上することができる。 Specifically, in the laminating process, after the final rolling step, two insulating sheets that do not melt under the heating conditions are passed through an adhesive that can be melted under the heating conditions of 160 to 200 ° C. and 0.1 s to 5 s. A laminated structure is formed by sandwiching a predetermined number of conductors obtained in the final rolling step. In this laminating treatment, for example, the laminated body is sandwiched between a pair of rolls, and the heating conditions (roll temperature) during the laminating treatment are preferably 160 to 200 ° C. and 0.1 s to 5 s, preferably 160 to 200 ° C. It is more preferably 0.5 s to 5 s. If the heating conditions during the laminating process are within the above range, the insulating sheet will not melt during the laminating process even if an insulating sheet made of a resin having a low melting point such as PET is used, while suppressing an increase in cost. Productivity can be improved.

本ラミネート処理時において導体に熱が付与されるとき、上記加熱条件を上記範囲内の値とすることで、導体における{123}<634>の方位に配向する結晶粒の面積率が低下せず、上記2回目圧延後の導体における{123}<634>の方位に配向する結晶粒の面積率を維持した状態でラミネート処理が行われる。 When heat is applied to the conductor during this laminating process, by setting the heating conditions to a value within the above range, the area ratio of the crystal grains oriented in the direction of {123} <634> in the conductor does not decrease. The laminating treatment is performed while maintaining the area ratio of the crystal grains oriented in the direction of {123} <634> in the conductor after the second rolling.

また、上記加熱条件により、ラミネート処理の加熱時にCube方位が高発達する再結晶が起きることが無く、導体の強度が低下しないので、ラミネート処理時はもとより、その後のフラットケーブルとコネクタとの接合或いは回転コネクタ装置へのフラットケーブルの収納時に導体の変形及び破断が生じ難く、生産性の低下を防止することができる。 Further, under the above heating conditions, recrystallization in which the Cube orientation is highly developed does not occur during heating of the laminating treatment, and the strength of the conductor does not decrease. Therefore, not only during the laminating treatment but also after joining the flat cable and the connector or When the flat cable is stored in the rotary connector device, the conductor is less likely to be deformed or broken, and a decrease in productivity can be prevented.

また、本実施形態に係る導体の場合、一本あたり所定の張力を付与しながら一対の絶縁シートで当該複数の導体を挟み込んでも、導体の塑性変形が起きずにラミネート作製が可能となる。また、ラミネート処理条件が定められた所定のガイドラインに沿ってフラットケーブルを製造する場合にも、同ガイドライン通りに安全性、信頼性の高いフラットケーブルを提供することができる。 Further, in the case of the conductor according to the present embodiment, even if the plurality of conductors are sandwiched between a pair of insulating sheets while applying a predetermined tension to each conductor, the laminate can be manufactured without causing plastic deformation of the conductors. Further, even when a flat cable is manufactured according to a predetermined guideline in which laminating treatment conditions are defined, it is possible to provide a flat cable having high safety and reliability according to the guideline.

上記ラミネート処理において、上記加熱条件で融解可能な層状の接着部と同加熱条件で融解しない層状のベース部とからなる一対の絶縁シートで所定数の導体を挟み込み、所要数の導体、一対の接着部及び一対のベース部からなる積層体をプレスしてラミネート処理してもよい。 In the laminating process, a predetermined number of conductors are sandwiched between a pair of insulating sheets consisting of a layered adhesive portion that can be melted under the heating conditions and a layered base portion that does not melt under the same heating conditions, and a required number of conductors and a pair of adhesives are bonded. A laminate consisting of a portion and a pair of base portions may be pressed for laminating.

[フラットケーブルにおける導体の特性]
上記方法によって製造されたフラットケーブルにおいて、導体の0.2%耐力は400MPa以上であり、且つ160〜200℃、0.1s〜5sでの加熱処理後の導体の0.2%耐力が、300MPa以上である。ラミネート処理前の導体の0.2%耐力を上記範囲内の値とすることにより、ラミネート処理時に導体の破断を生じ難くすることができ、また、160〜200℃、0.1s〜5sでの加熱処理後の導体の0.2%耐力を上記範囲内の値とすることにより、適度な耐力を保持しつつ、ラミネート処理後の曲げ性や耐座屈性を配慮し、良好な屈曲特性を得ることが可能となる。
[Characteristics of conductors in flat cables]
In the flat cable manufactured by the above method, the 0.2% proof stress of the conductor is 400 MPa or more, and the 0.2% proof stress of the conductor after heat treatment at 160 to 200 ° C. and 0.1 s to 5 s is 300 MPa. That is all. By setting the 0.2% proof stress of the conductor before the laminating treatment to a value within the above range, it is possible to prevent the conductor from breaking during the laminating treatment, and at 160 to 200 ° C. and 0.1s to 5s. By setting the 0.2% proof stress of the conductor after the heat treatment to a value within the above range, good bending characteristics can be obtained by considering the bendability and buckling resistance after the laminate treatment while maintaining an appropriate proof stress. It becomes possible to obtain.

また、50℃以上、ストローク長さ10mm〜15mm、屈曲速度10〜500回転/分の試験条件下にてIPC屈曲試験を行った結果、上記導体は、10万回屈曲試験後の被屈曲部の{001}<100>の方位に配向する結晶粒の面積率が75%以上である集合組織を有している。更に、50〜150℃、屈曲半径4.5mm〜6.5mm、ストローク長さ10mm〜15mm、屈曲速度10〜500回転/分の試験条件下にてIPC屈曲試験を行った結果、上記導体は、10万回屈曲試験後の被屈曲部の{001}<100>の方位に配向する結晶粒の面積率が75%以上である集合組織を有するのが好ましい。上記のような屈曲により、導体における上記圧延加工集合組織の少なくとも一部が変化して加工集合組織が形成される。またラミネート処理後の導体における許容ずれ角12.5°以内で{123}<634>の方位に配向する結晶粒の面積率が上記範囲内の値であると、屈曲試験前は成長していない{001}<100>方位粒が{123}<634>方位粒に隣接した場合、他の方位粒よりも低エネルギーで粒界移動が可能であるため、その結果Cube粒を優先的に成長させることができる。したがって、10万回屈曲試験後の被屈曲部の{001}<100>の方位に配向する結晶粒の面積率が上記範囲内の値であれば、フラットケーブルが回転コネクタ装置などの機器に組み付けられて実際に使用された際、長寿命化を実現することができる。 Further, as a result of performing an IPC bending test under the test conditions of 50 ° C. or higher, a stroke length of 10 mm to 15 mm, and a bending speed of 10 to 500 rotations / minute, the conductor is the part to be bent after the bending test 100,000 times. It has an texture in which the area ratio of the crystal grains oriented in the direction of {001} <100> is 75% or more. Further, as a result of performing an IPC bending test under the test conditions of 50 to 150 ° C., a bending radius of 4.5 mm to 6.5 mm, a stroke length of 10 mm to 15 mm, and a bending speed of 10 to 500 rotations / minute, the conductor was found to be. It is preferable to have an texture in which the area ratio of the crystal grains oriented in the direction of {001} <100> of the bent portion after the 100,000 times bending test is 75% or more. Due to the bending as described above, at least a part of the rolled texture of the conductor is changed to form the texture. Further, if the area ratio of the crystal grains oriented in the direction of {123} <634> within the allowable deviation angle of 12.5 ° in the conductor after the laminating treatment is within the above range, it does not grow before the bending test. When the {001} <100> orientation grain is adjacent to the {123} <634> orientation grain, the grain boundary can be moved with lower energy than other orientation grains, and as a result, the Cube grain is preferentially grown. be able to. Therefore, if the area ratio of the crystal grains oriented in the direction of {001} <100> of the bent portion after the 100,000 times bending test is a value within the above range, the flat cable is assembled to a device such as a rotary connector device. When it is actually used, it can achieve a long life.

以下、本発明の実施例を詳細に説明する。 Hereinafter, examples of the present invention will be described in detail.

先ず、鋳造機を用いて、タフピッチ銅からなる厚さ100mm〜200mmの鋳塊を作製した。次いで、600〜1000℃の熱間圧延により厚さ10〜20mmの板材を作製し、その後冷間圧延を施した。 First, a casting machine was used to prepare an ingot having a thickness of 100 mm to 200 mm made of tough pitch copper. Next, a plate material having a thickness of 10 to 20 mm was produced by hot rolling at 600 to 1000 ° C., and then cold rolling was performed.

上記共通工程を経た後、表1に示すように、発明例1のプロセス1では、処理温度300℃、処理時間2時間で板材に熱処理を施した後、圧下率97%で最終圧延を施し、厚さ0.035mmの導体を得た。
また、発明例2のプロセス2では、処理温度170℃、処理時間2時間で、板材に熱処理を施した後、圧下率97%で圧延処理を施し、厚さ0.035mmの導体を得た。
After passing through the above common steps, as shown in Table 1, in Process 1 of Invention Example 1, the plate material was heat-treated at a treatment temperature of 300 ° C. and a treatment time of 2 hours, and then finally rolled at a reduction rate of 97%. A conductor having a thickness of 0.035 mm was obtained.
Further, in the process 2 of Invention Example 2, the plate material was heat-treated at a treatment temperature of 170 ° C. and a treatment time of 2 hours, and then rolled at a reduction rate of 97% to obtain a conductor having a thickness of 0.035 mm.

発明例3のプロセス3では、処理温度200℃、処理時間2時間で、板材に1回目熱処理を施した後、1回目熱処理後の板材に圧下率67%で1回目圧延を施して厚さ0.4mmの導体を得、その後処理温度300℃、処理温度2時間で、導体に2回目熱処理を施し、更に2回目熱処理後の板材に圧下率91%で2回目圧延を施して厚さ0.035mmの導体を得た。 In the process 3 of Invention Example 3, the plate material is subjected to the first heat treatment at a treatment temperature of 200 ° C. and the treatment time is 2 hours, and then the plate material after the first heat treatment is subjected to the first rolling at a rolling reduction of 67% to have a thickness of 0. A conductor of .4 mm was obtained, and then the conductor was subjected to a second heat treatment at a treatment temperature of 300 ° C. and a treatment temperature of 2 hours, and the plate material after the second heat treatment was further subjected to a second rolling at a rolling reduction of 91% to obtain a thickness of 0. A 035 mm conductor was obtained.

比較例1のプロセス4では、1回目圧延の圧下率を83%、2回目圧延の圧下率を83%としたこと以外は、プロセス3と同様にして厚さ0.035mmの導体を得た。 In the process 4 of Comparative Example 1, a conductor having a thickness of 0.035 mm was obtained in the same manner as in the process 3 except that the rolling reduction ratio of the first rolling was 83% and the rolling reduction ratio of the second rolling was 83%.

比較例2のプロセス5では、1回目圧延の圧下率を92%、2回目圧延の圧下率を65%としたこと以外は、プロセス3と同様にして厚さ0.035mmの導体を得た。 In the process 5 of Comparative Example 2, a conductor having a thickness of 0.035 mm was obtained in the same manner as in the process 3 except that the rolling reduction ratio of the first rolling was 92% and the rolling reduction ratio of the second rolling was 65%.

比較例3のプロセス6では、1回目圧延の圧下率を96%、2回目圧延の圧下率を30%としたこと以外は、プロセス3と同様にして厚さ0.035mmの導体を得た。 In the process 6 of Comparative Example 3, a conductor having a thickness of 0.035 mm was obtained in the same manner as in the process 3 except that the rolling reduction ratio of the first rolling was 96% and the rolling reduction ratio of the second rolling was 30%.

そして、作製された発明例1〜3、比較例1〜3の各導体について、{123}<634>の方位に配向する結晶粒の面積率、導体の厚み方向における結晶粒の寸法の平均値、及び導体の幅方向における結晶粒の寸法を導体の厚み方向における当該結晶粒の寸法で除した値の平均値を、それぞれ下記(A)〜(C)の方法で測定し、また0.2%耐力を下記(D)の方法で測定した。 Then, for each of the produced conductors of Invention Examples 1 to 3 and Comparative Examples 1 to 3, the area ratio of the crystal grains oriented in the direction of {123} <634> and the average value of the size of the crystal grains in the thickness direction of the conductor. , And the average value of the values obtained by dividing the size of the crystal grains in the width direction of the conductor by the size of the crystal grains in the thickness direction of the conductor was measured by the methods (A) to (C) below, respectively, and 0.2. % Strength was measured by the method (D) below.

(A){123}<634>の方位に配向する結晶粒の面積率
前加工処理としてクロスセクションポリッシャ加工を導体断面に施して銅表面を露出させた後、200μm×35μmの範囲をステップ0.1μm〜0.3μmにて電子線後方散乱解析(EBSD:Electron Back Scatter Diffraction)を実施し、解析ソフトを用いて許容ずれ角12.5°以内として、{123}<634>の方位に配向する結晶粒の面積率を解析した。
(A) Area ratio of crystal grains oriented in the direction of {123} <634> As a preprocessing treatment, a cross section polisher process is applied to the conductor cross section to expose the copper surface, and then the range of 200 μm × 35 μm is stepped 0. Electron Backscatter Diffraction (EBSD) is performed at 1 μm to 0.3 μm, and the orientation is oriented in the direction of {123} <634> with an allowable deviation angle of 12.5 ° or less using analysis software. The area ratio of crystal grains was analyzed.

(B)導体の厚み方向における結晶粒の寸法の平均値
上記EBSDにて測定解析されたIPF MAPから、導体の厚み方向に沿って結晶粒の数をカウントし、導体厚みで除して、結晶粒の寸法の平均値を求めた。
(B) Mean value of crystal grain size in the thickness direction of the conductor From the IPF MAP measured and analyzed by the above EBSD, the number of crystal grains is counted along the thickness direction of the conductor, divided by the conductor thickness, and the crystal is formed. The average value of the grain size was calculated.

(C)導体の幅方向における結晶粒の寸法を導体の厚み方向における当該結晶粒の寸法で除した値の平均値
導体の幅方向をTD方向(圧延方向に垂直な方向)とし、厚み方向の結晶粒の寸法と同様の方法にて幅方向の100μm長における結晶粒の寸法を求め、上記厚み方向の結晶粒の寸法で除して、(幅方向結晶粒寸法)/(厚み方向結晶粒寸法)の平均値を算出した。
(C) Average value obtained by dividing the grain size in the width direction of the conductor by the size of the crystal grain in the thickness direction of the conductor. The width direction of the conductor is the TD direction (direction perpendicular to the rolling direction), and the thickness direction is Obtain the size of the crystal grain at a length of 100 μm in the width direction by the same method as the size of the crystal grain, and divide by the size of the crystal grain in the thickness direction to obtain (width direction crystal grain size) / (thickness direction crystal grain size). ) Was calculated.

(D)0.2%耐力
0.035mm厚、0.8mm幅、160mm長の短冊材をスリット切断にて作製し、該短冊材について、試験片サイズ以外はJIS Z 2241に準拠し、試験数3本の平均値を算出した。0.2%耐力が400MPa以上である場合を良好、400MPa未満である場合を不良とした。上記の方法にて測定した結果を表1に示す。
(D) 0.2% proof stress 0.035 mm thick, 0.8 mm wide, 160 mm long strips were made by slit cutting, and the strips were tested in accordance with JIS Z 2241 except for the size of the test piece. The average value of the three lines was calculated. A case where the 0.2% proof stress was 400 MPa or more was regarded as good, and a case where the 0.2% proof stress was less than 400 MPa was regarded as a defect. The results measured by the above method are shown in Table 1.

Figure 0006809957
Figure 0006809957

表1の結果より、発明例1では、導体の材料及び{123}<634>の方位に配向する結晶粒の面積率が本発明の範囲内であり、0.2%耐力が440MPaであった。
また、発明例2では、導体の材料及び{123}<634>の方位に配向する結晶粒の面積率が本発明の範囲内であり、更に、導体の厚み方向における結晶粒の寸法の平均値が2μmであり、且つ、(幅方向結晶粒寸法)/(厚み方向結晶粒寸法)の平均値が5であり、0.2%耐力が455MPaであった。
発明例3では、導体の材料及び{123}<634>の方位に配向する結晶粒の面積率が本発明の範囲内であり、0.2%耐力が430MPaであった。
From the results in Table 1, in Invention Example 1, the area ratio of the conductor material and the crystal grains oriented in the direction of {123} <634> was within the range of the present invention, and the 0.2% proof stress was 440 MPa. ..
Further, in Invention Example 2, the area ratio of the material of the conductor and the crystal grains oriented in the direction of {123} <634> is within the range of the present invention, and further, the average value of the dimensions of the crystal grains in the thickness direction of the conductor. Was 2 μm, the average value of (grain size in the width direction) / (crystal grain size in the thickness direction) was 5, and the 0.2% strength was 455 MPa.
In Invention Example 3, the area ratio of the conductor material and the crystal grains oriented in the direction of {123} <634> was within the range of the present invention, and the 0.2% proof stress was 430 MPa.

一方、比較例1〜3ではいずれも、1回目圧延で高圧延率であったため、2回目熱処理時に{001}<100>の方位に配向する結晶粒が成長し、最終圧延後における{123}<634>の方位に配向する結晶粒の面積率が本発明の範囲外であり、0.2%耐力が310MPaと劣った。 On the other hand, in Comparative Examples 1 to 3, since the rolling ratio was high in the first rolling, crystal grains oriented in the direction of {001} <100> grew during the second heat treatment, and {123} after the final rolling. The area ratio of the crystal grains oriented in the direction of <634> was out of the range of the present invention, and the 0.2% proof stress was inferior to 310 MPa.

次に、発明例4として、表1のプロセス1で得られた導体を、1本当り0.3kgfの張力を付与しながら、2枚の接着層付PET絶縁シート(リケンテクノス社製、エアバッグ用フレキシブルフラットケーブル(絶縁フィルム)、ベース層厚25μm、接着層厚20μm)で挟み込み、両面からプレスしてラミネート処理を施し、フラットケーブルを作製した。接着層として、160〜200℃、0.1s〜5sの加熱条件で融解可能なポリエステル系樹脂を選定し、ベース層として、上記加熱条件で融解しないPET樹脂を選定した。ラミネート処理条件は、ロール温度170℃、加熱時間(プレス時間)5s、プレス圧力0.5MPaとした。 Next, as an example of the invention 4, two PET insulating sheets with an adhesive layer (manufactured by Riken Technos Co., Ltd., for airbags) are applied to the conductors obtained in the process 1 of Table 1 while applying a tension of 0.3 kgf per wire. A flat cable was produced by sandwiching it between a flexible flat cable (insulating film), a base layer thickness of 25 μm, and an adhesive layer thickness of 20 μm) and pressing from both sides to perform a laminating treatment. As the adhesive layer, a polyester resin that can be melted under heating conditions of 160 to 200 ° C. and 0.1s to 5s was selected, and as the base layer, a PET resin that did not melt under the above heating conditions was selected. The laminating treatment conditions were a roll temperature of 170 ° C., a heating time (pressing time) of 5 s, and a pressing pressure of 0.5 MPa.

発明例5として、プロセス2で得られた導体を用いたこと以外は、発明例4と同様にして、フラットケーブルを作製した。また、発明例6として、プロセス3で得られた導体を用いたこと以外は、発明例4と同様にして、フラットケーブルを作製した。 As Invention Example 5, a flat cable was produced in the same manner as in Invention Example 4 except that the conductor obtained in Process 2 was used. Further, as Invention Example 6, a flat cable was produced in the same manner as in Invention Example 4 except that the conductor obtained in Process 3 was used.

次に、比較例4として、表1のプロセス1で得られた導体を、0.3kgfの張力を付与しながら、PI絶縁シート(東レデュポン社製、製品名「カプトンFタイプ」、もしくは宇部興業社製、製品名「ユーピレックス(登録商標)−VT/NVT」、厚さ10〜50μm)で挟み込み、両面からプレスしてラミネート処理を施し、フラットケーブルを作製した。ラミネート処理条件は、ロール温度300℃、加熱時間(プレス時間)180s、プレス圧力0.5MPaとした。 Next, as Comparative Example 4, the conductor obtained in Process 1 of Table 1 is subjected to a PI insulating sheet (manufactured by Toray DuPont, product name "Kapton F type", or Ube Kogyo) while applying a tension of 0.3 kgf. A flat cable was produced by sandwiching it with a product name "UPIREX (registered trademark) -VT / NVT" (thickness 10 to 50 μm) manufactured by Toray Industries, Inc., and pressing it from both sides to perform a laminating process. The laminating treatment conditions were a roll temperature of 300 ° C., a heating time (pressing time) of 180 s, and a pressing pressure of 0.5 MPa.

比較例5として、ラミネート処理時のロール温度を170℃に変えたこと以外は、比較例4と同様にして、フラットケーブルを作製した。また、比較例6として、接着層付PET絶縁シートを用いたこと以外は、比較例4と同様にして、フラットケーブルを作製した。 As Comparative Example 5, a flat cable was produced in the same manner as in Comparative Example 4 except that the roll temperature during the laminating process was changed to 170 ° C. Further, as Comparative Example 6, a flat cable was produced in the same manner as in Comparative Example 4 except that a PET insulating sheet with an adhesive layer was used.

比較例7として、プロセス2で得られた導体を用いたこと以外は、比較例4と同様にして、フラットケーブルを作製した。また、比較例8として、プロセス2で得られた導体を用いたこと以外は、比較例5と同様にして、フラットケーブルを作製した。また、比較例9として、プロセス2で得られた導体を用いたこと以外は、比較例6と同様にして、フラットケーブルを作製した。 As Comparative Example 7, a flat cable was produced in the same manner as in Comparative Example 4 except that the conductor obtained in Process 2 was used. Further, as Comparative Example 8, a flat cable was produced in the same manner as in Comparative Example 5 except that the conductor obtained in Process 2 was used. Further, as Comparative Example 9, a flat cable was produced in the same manner as in Comparative Example 6 except that the conductor obtained in Process 2 was used.

比較例10として、プロセス3で得られた導体を用いたこと以外は、比較例4と同様にして、フラットケーブルを作製した。 As Comparative Example 10, a flat cable was produced in the same manner as in Comparative Example 4 except that the conductor obtained in Process 3 was used.

比較例11として、プロセス4で得られた導体を用いたこと以外は、比較例4と同様にして、フラットケーブルを作製した。また、比較例12として、プロセス4で得られた導体を用いたこと以外は、比較例5と同様にして、フラットケーブルを作製した。 As Comparative Example 11, a flat cable was produced in the same manner as in Comparative Example 4 except that the conductor obtained in Process 4 was used. Further, as Comparative Example 12, a flat cable was produced in the same manner as in Comparative Example 5 except that the conductor obtained in Process 4 was used.

比較例13として、プロセス5で得られた導体を用いたこと以外は、比較例4と同様にして、フラットケーブルを作製した。また、比較例14として、プロセス5で得られた導体を用いたこと以外は、比較例5と同様にして、フラットケーブルを作製した。 As Comparative Example 13, a flat cable was produced in the same manner as in Comparative Example 4 except that the conductor obtained in Process 5 was used. Further, as Comparative Example 14, a flat cable was produced in the same manner as in Comparative Example 5 except that the conductor obtained in Process 5 was used.

比較例15として、プロセス6で得られた導体を用いたこと以外は、比較例4と同様にして、フラットケーブルを作製した。また、比較例16として、プロセス6で得られた導体を用いたこと以外は、比較例5と同様にして、フラットケーブルを作製した。 As Comparative Example 15, a flat cable was produced in the same manner as in Comparative Example 4 except that the conductor obtained in Process 6 was used. Further, as Comparative Example 16, a flat cable was produced in the same manner as in Comparative Example 5 except that the conductor obtained in Process 6 was used.

そして、作製された発明例4〜6、比較例4〜16の各フラットケーブルについて、ラミネート処理後の{123}<634>の方位に配向する結晶粒の面積率、ラミネート処理後の導体の0.2%耐力、ラミネート性、コネクタ接合性、室温試験寿命、高温試験寿命、及び高温時10万回屈曲試験後の{123}<634>の方位に配向する結晶粒の面積率を、それぞれ下記(E)〜(J)の方法で測定、評価した。 Then, for each of the produced flat cables of Invention Examples 4 to 6 and Comparative Examples 4 to 16, the area ratio of the crystal grains oriented in the direction of {123} <634> after the laminating treatment, and 0 of the conductor after the laminating treatment. .2% proof stress, laminate property, connector bondability, room temperature test life, high temperature test life, and area ratio of crystal grains oriented in the direction of {123} <634> after 100,000 bending tests at high temperature are as follows. It was measured and evaluated by the methods (E) to (J).

(E)ラミネート処理後の{123}<634>の方位に配向する結晶粒の面積率
ラミネート処理後の導体について、上記(A)と同様の方法にて、EBSDにより{123}<634>の方位に配向する結晶粒の面積率を求めた。
(E) Area ratio of crystal grains oriented in the direction of {123} <634> after laminating treatment For the conductor after laminating treatment, the conductor of {123} <634> was subjected to EBSD in the same manner as in (A) above. The area ratio of the crystal grains oriented in the orientation was determined.

(F)ラミネート処理後の0.2%耐力
フラットケーブルにおいて所定の溶剤にて樹脂を溶解し、取り出した導体について、上記(D)と同様の方法にて、試験数3本の平均値を算出した。
(F) In a 0.2% proof stress flat cable after laminating treatment, the resin was dissolved in a predetermined solvent, and the average value of three tests was calculated for the conductor taken out by the same method as in (D) above. did.

(G)ラミネート性
ラミネート処理時に導体間が設計上の距離の1/10以上縮まったり離れたり、もしくは導体に1%以上の永久伸びが生じた場合、ラミネート性を不良「×」とし、導体間が設計上の距離の1/10以上縮まったり離れたりせず且つ導体に1%以上の永久伸びが生じなかった場合、ラミネート性を良好「〇」とした。
(G) Laminating property If the conductors are shrunk or separated by 1/10 or more of the design distance during the laminating process, or if the conductors are permanently stretched by 1% or more, the laminating property is regarded as poor "x" and the conductors are separated from each other. When the conductor was not shrunk or separated by 1/10 or more of the design distance and the conductor was not permanently stretched by 1% or more, the laminate property was set to “◯”.

(H)コネクタ接合性
コネクタ接合時に導体が破断した場合を不良「×」とし、導体に破断が生じなかった場合を良好「〇」とした。
(H) Connector Bondability A case where the conductor was broken during connector joining was evaluated as a defective “x”, and a case where the conductor was not broken was evaluated as a good “〇”.

(I)室温屈曲寿命及び高温屈曲寿命
FPC屈曲試験機(上島製作所製、装置名「FT−2130」)を用い、試験サンプルとして、導体を4〜6本配列し、樹脂でラミネートしたフラットケーブルを作製し、該フラットケーブルの幅方向両端に配列された導体のいずれかが破断したときに寿命と判断した。試験条件は、ストローク±13mm、試験速度180rpm、屈曲半径5.5mm、室温は23℃、高温は85℃とした。寿命と判断したときの屈曲回数が30万回以上である場合を、回転コネクタが要求される疲労特性を満足するとして極めて良好「A」、15万回以上30万回未満である場合を良好「B」、15万回未満を不良「C」とした。
(I) Room temperature bending life and high temperature bending life Using an FPC bending tester (manufactured by Ueshima Seisakusho, device name "FT-2130"), a flat cable in which 4 to 6 conductors are arranged and laminated with resin is used as a test sample. When any of the conductors arranged at both ends in the width direction of the flat cable was broken, the life was determined. The test conditions were a stroke of ± 13 mm, a test speed of 180 rpm, a bending radius of 5.5 mm, a room temperature of 23 ° C., and a high temperature of 85 ° C. When the life is judged to be 300,000 times or more, it is extremely good as "A" as satisfying the fatigue characteristics required for the rotary connector, and when it is 150,000 times or more and less than 300,000 times, it is good. "B" and less than 150,000 times were regarded as defective "C".

(J)10万回高温屈曲試験後の{001}<100>の方位に配向する結晶粒の面積率
上記(I)と同様の方法にて高温(85℃)における10万回屈曲試験を行った後、上記(E)と同様の方法にて、{001}<100>の方位に配向する結晶粒の面積率を求めた。上記の方法にて測定、評価した結果を表2に示す。
(J) Area ratio of crystal grains oriented in the direction of {001} <100> after 100,000 times high temperature bending test 100,000 times bending test at high temperature (85 ° C.) is performed by the same method as in (I) above. After that, the area ratio of the crystal grains oriented in the direction of {001} <100> was determined by the same method as in (E) above. Table 2 shows the results of measurement and evaluation by the above method.

Figure 0006809957
Figure 0006809957

表2に示すように、発明例4では、プロセス1で製造された導体を用い、ラミネート材が上記接着層付きPET絶縁シートであり、ラミネート処理における加熱条件が170℃、3sであるので、ラミネート性及びコネクタ接合性の双方が良好であった。また、ラミネート処理後の{123}<634>の方位に配向する結晶粒の面積率が本発明の範囲内であり、ラミネート処理後の0.2%耐力が420MPaであり、室温屈曲寿命が良好であると共に高温屈曲寿命が極めて良好であった。更に、10万回高温屈曲試験後の{001}<100>の方位に配向する結晶粒の面積率が97%であり、屈曲によりCube方位の結晶粒が成長していることが分かった。 As shown in Table 2, in Invention Example 4, the conductor produced in Process 1 is used, the laminating material is the PET insulating sheet with an adhesive layer, and the heating conditions in the laminating process are 170 ° C. and 3 s. Both the property and the connector bondability were good. Further, the area ratio of the crystal grains oriented in the direction of {123} <634> after the laminating treatment is within the range of the present invention, the 0.2% proof stress after the laminating treatment is 420 MPa, and the room temperature bending life is good. At the same time, the high temperature bending life was extremely good. Further, the area ratio of the crystal grains oriented in the direction of {001} <100> after the 100,000 high temperature bending test was 97%, and it was found that the crystal grains oriented in the Cube direction were grown by bending.

発明例5では、プロセス2で製造された導体を用い、ラミネート材が上記接着層付きPET絶縁シートであり、ラミネート処理における加熱条件が170℃、3sであるので、ラミネート性及びコネクタ接合性の双方が良好であった。また、ラミネート処理後の{123}<634>の方位に配向する結晶粒の面積率が本発明の範囲内であり、ラミネート処理後の0.2%耐力が420MPaであり、更に、導体の厚み方向における結晶粒の寸法の平均値が2μmであり、且つ、(幅方向結晶粒寸法)/(厚み方向結晶粒寸法)の平均値が5であり、高温屈曲寿命のみならず室温屈曲寿命も極めて良好であった。更に、10万回高温屈曲試験後の{001}<100>の方位に配向する結晶粒の面積率が95%であり、屈曲によりCube方位の結晶粒が十分に成長していることが分かった。 In Invention Example 5, the conductor produced in the process 2 is used, the laminating material is the PET insulating sheet with an adhesive layer, and the heating conditions in the laminating process are 170 ° C. and 3 s. Therefore, both the laminate property and the connector bondability are both. Was good. Further, the area ratio of the crystal grains oriented in the direction of {123} <634> after the laminating treatment is within the range of the present invention, the 0.2% proof stress after the laminating treatment is 420 MPa, and the thickness of the conductor is further increased. The average value of the crystal grain dimensions in the direction is 2 μm, and the average value of (width direction crystal grain size) / (thickness direction crystal grain size) is 5, and not only the high temperature bending life but also the room temperature bending life is extremely long. It was good. Furthermore, the area ratio of the crystal grains oriented in the direction of {001} <100> after the 100,000 times high temperature bending test was 95%, and it was found that the crystal grains oriented in the Cube direction were sufficiently grown by bending. ..

発明例6では、プロセス3で製造された導体を用い、ラミネート材が上記接着層付きPET絶縁シートであり、ラミネート処理における加熱条件が170℃、3sであるので、ラミネート性及びコネクタ接合性の双方が良好であった。また、ラミネート処理後の{123}<634>の方位に配向する結晶粒の面積率が本発明の範囲内であり、ラミネート処理後の0.2%耐力が430MPaであり、室温屈曲寿命が良好であると共に高温屈曲寿命が極めて良好であった。更に、10万回高温屈曲試験後の{001}<100>の方位に配向する結晶粒の面積率が80%であり、屈曲によりCube方位の結晶粒が成長していることが分かった。 In Invention Example 6, the conductor manufactured in the process 3 is used, the laminating material is the PET insulating sheet with an adhesive layer, and the heating conditions in the laminating treatment are 170 ° C. and 3 s. Therefore, both the laminate property and the connector bondability are both. Was good. Further, the area ratio of the crystal grains oriented in the direction of {123} <634> after the laminating treatment is within the range of the present invention, the 0.2% proof stress after the laminating treatment is 430 MPa, and the room temperature bending life is good. At the same time, the high temperature bending life was extremely good. Further, it was found that the area ratio of the crystal grains oriented in the direction of {001} <100> after the high temperature bending test 100,000 times was 80%, and the crystal grains oriented in the Cube direction were grown by bending.

一方、比較例4では、プロセス1で製造された導体を用い、ラミネート材がPI絶縁シートであり、ラミネート処理における加熱条件が300℃、3sであるので、ラミネート処理時に導体が軟化し、ラミネート性及びコネクタ接合性の双方が不良であった。 On the other hand, in Comparative Example 4, since the conductor produced in Process 1 is used, the laminating material is a PI insulating sheet, and the heating conditions in the laminating treatment are 300 ° C. and 3s, the conductor softens during the laminating treatment and has a laminating property. And both the connector connectivity was poor.

比較例5では、プロセス1で製造された導体を用い、ラミネート材がPI絶縁シートであり、ラミネート処理における加熱条件が170℃、3sであるので、ラミネート処理時にPI絶縁シートが融解せず、フラットケーブルを作製することができなかった。 In Comparative Example 5, the conductor produced in Process 1 is used, the laminating material is a PI insulating sheet, and the heating conditions in the laminating process are 170 ° C. and 3 s. Therefore, the PI insulating sheet does not melt during the laminating process and is flat. The cable could not be made.

比較例6では、プロセス1で製造された導体を用い、ラミネート材が接着層付きPET絶縁シートであり、ラミネート処理における加熱条件が300℃、3sであるので、ラミネート処理時に接着層のみならずベース層が融解し、制御不能となってフラットケーブルを成形することができなかった。 In Comparative Example 6, the conductor manufactured in the process 1 is used, the laminating material is a PET insulating sheet with an adhesive layer, and the heating conditions in the laminating process are 300 ° C. and 3 s. Therefore, not only the adhesive layer but also the base is used during the laminating process. The layers melted and became uncontrollable, making it impossible to form flat cables.

比較例7では、プロセス2で製造された導体を用い、ラミネート材がPI絶縁シートであり、ラミネート処理における加熱条件が300℃、3sであるので、比較例4と同様、ラミネート処理時に導体が軟化し、ラミネート性及びコネクタ接合性の双方が不良であった。 In Comparative Example 7, the conductor produced in Process 2 is used, the laminating material is a PI insulating sheet, and the heating conditions in the laminating process are 300 ° C. and 3 s. Therefore, as in Comparative Example 4, the conductor softens during the laminating process. However, both the laminate property and the connector bondability were poor.

比較例8では、プロセス2で製造された導体を用い、ラミネート材がPI絶縁シートであり、ラミネート処理における加熱条件が170℃、3sであるので、比較例5と同様、ラミネート処理時にPI絶縁シートが融解せず、フラットケーブルを作製することができなかった。 In Comparative Example 8, the conductor produced in Process 2 is used, the laminating material is a PI insulating sheet, and the heating conditions in the laminating process are 170 ° C. and 3 s. Therefore, as in Comparative Example 5, the PI insulating sheet is used during the laminating process. Did not melt and the flat cable could not be made.

比較例9では、プロセス2で製造された導体を用い、ラミネート材が接着層付きPET絶縁シートであり、ラミネート処理における加熱条件が300℃、3sであるので、比較例6と同様、ラミネート処理時に接着層のみならずベース層が融解し、制御不能となってフラットケーブルを成形することができなかった。 In Comparative Example 9, the conductor manufactured in Process 2 is used, the laminating material is a PET insulating sheet with an adhesive layer, and the heating conditions in the laminating treatment are 300 ° C. and 3s. Therefore, as in Comparative Example 6, during the laminating treatment Not only the adhesive layer but also the base layer melted and became uncontrollable, making it impossible to form a flat cable.

比較例10では、プロセス3で製造された導体を用い、ラミネート材がPI絶縁シートであり、ラミネート処理における加熱条件が300℃、3sであるので、比較例4と同様、ラミネート処理時に導体が軟化し、ラミネート性及びコネクタ接合性の双方が不良であった。 In Comparative Example 10, the conductor produced in Process 3 is used, the laminating material is a PI insulating sheet, and the heating conditions in the laminating treatment are 300 ° C. and 3s. Therefore, as in Comparative Example 4, the conductor softens during the laminating treatment. However, both the laminate property and the connector bondability were poor.

比較例11では、プロセス4で製造された導体を用い、ラミネート材がPI絶縁シートであり、ラミネート処理における加熱条件が300℃、3sであるので、比較例4と同様、ラミネート処理時に導体が軟化し、ラミネート性及びコネクタ接合性の双方が不良であった。 In Comparative Example 11, the conductor manufactured in Process 4 is used, the laminating material is a PI insulating sheet, and the heating conditions in the laminating process are 300 ° C. and 3 s. Therefore, as in Comparative Example 4, the conductor softens during the laminating process. However, both the laminate property and the connector bondability were poor.

比較例12では、プロセス4で製造された導体を用い、ラミネート材が接着層付きPET絶縁シートであり、ラミネート処理における加熱条件が170℃、3sであるので、ラミネート性及びコネクタ接合性の双方が良好であったものの、ラミネート処理後の{123}<634>の方位に配向する結晶粒の面積率が本発明の範囲外であり、ラミネート処理後の0.2%耐力が310MPaであり、室温屈曲寿命及び高温屈曲寿命の双方が不良であった。また、10万回高温屈曲試験後の{001}<100>の方位に配向する結晶粒の面積率が15%であり、屈曲によってCube方位の結晶粒がほとんど成長していないことが分かった。 In Comparative Example 12, the conductor produced in the process 4 is used, the laminating material is a PET insulating sheet with an adhesive layer, and the heating conditions in the laminating process are 170 ° C. and 3 s. Therefore, both the laminate property and the connector bondability are improved. Although it was good, the area ratio of the crystal grains oriented in the direction of {123} <634> after the laminating treatment was out of the range of the present invention, the 0.2% proof stress after the laminating treatment was 310 MPa, and the room temperature. Both the bending life and the high temperature bending life were poor. Further, it was found that the area ratio of the crystal grains oriented in the direction of {001} <100> after the 100,000 times high temperature bending test was 15%, and the crystal grains in the Cube orientation hardly grew due to the bending.

比較例13では、プロセス5で製造された導体を用い、ラミネート材がPI絶縁シートであり、ラミネート処理における加熱条件が300℃、3sであるので、比較例4と同様、ラミネート処理時に導体が軟化し、ラミネート性及びコネクタ接合性の双方が不良であった。 In Comparative Example 13, the conductor produced in the process 5 is used, the laminating material is a PI insulating sheet, and the heating conditions in the laminating process are 300 ° C. and 3 s. Therefore, as in Comparative Example 4, the conductor softens during the laminating process. However, both the laminate property and the connector bondability were poor.

比較例14では、プロセス5で製造された導体を用い、ラミネート材が接着層付きPET絶縁シートであり、ラミネート処理における加熱条件が170℃、3sであるので、ラミネート処理前の{123}<634>の方位に配向する結晶粒の面積率が本発明の範囲外であり、ラミネート処理前の導体の0.2%耐力が250MPaであるので、ラミネート性及びコネクタ接合性の双方が不良であった。 In Comparative Example 14, the conductor produced in the process 5 is used, the laminating material is a PET insulating sheet with an adhesive layer, and the heating conditions in the laminating treatment are 170 ° C. and 3 s. Therefore, {123} <634 before the laminating treatment. Since the area ratio of the crystal grains oriented in the> direction is outside the range of the present invention and the 0.2% proof stress of the conductor before the laminating treatment is 250 MPa, both the laminating property and the connector bondability are poor. ..

比較例15では、プロセス6で製造された導体を用い、ラミネート材がPI絶縁シートであり、ラミネート処理における加熱条件が300℃、3sであるので、比較例4と同様、ラミネート処理時に導体が軟化し、ラミネート性及びコネクタ接合性の双方が不良であった。 In Comparative Example 15, the conductor produced in the process 6 is used, the laminating material is a PI insulating sheet, and the heating conditions in the laminating process are 300 ° C. and 3 s. Therefore, as in Comparative Example 4, the conductor softens during the laminating process. However, both the laminate property and the connector bondability were poor.

比較例16では、プロセス6で製造された導体を用い、ラミネート材が接着層付きPET絶縁シートであり、ラミネート処理における加熱条件が170℃、3sであるので、ラミネート処理前の{123}<634>の方位に配向する結晶粒の面積率が本発明の範囲外であり、ラミネート処理前の0.2%耐力が230MPaであるので、ラミネート性及びコネクタ接合性の双方が不良であった。 In Comparative Example 16, the conductor produced in the process 6 is used, the laminating material is a PET insulating sheet with an adhesive layer, and the heating conditions in the laminating treatment are 170 ° C. and 3 s. Therefore, {123} <634 before the laminating treatment. Since the area ratio of the crystal grains oriented in the> direction is outside the range of the present invention and the 0.2% proof stress before the laminating treatment is 230 MPa, both the laminating property and the connector bondability are poor.

1 フレキシブルフラットケーブル
11−1,11−2,11−3 導体
11−4,11−5,11−6 導体
12,13 一対の絶縁シート
14 接着層
22 絶縁シート
22a ベース層
22b 接着層
23 絶縁シート
23a ベース層
23b 接着層
1 Flexible flat cable 11-1, 11-2, 11-3 Conductor 11-4, 11-5, 11-6 Conductor 12, 13 Pair of insulating sheets 14 Adhesive layer 22 Insulation sheet 22a Base layer 22b Adhesive layer 23 Insulation sheet 23a Base layer 23b Adhesive layer

Claims (9)

タフピッチ銅及び無酸素銅のいずれかからなり、且つ{123}<634>の方位に許容ずれ角0°〜12.5°で配向する結晶粒の面積率が25%以上である圧延加工集合組織を有する所定数の導体を備え
50℃以上、ストローク長さ10mm〜15mm、屈曲速度10〜500回転/分の試験条件下にてIPC屈曲試験を行った結果、前記導体は、10万回屈曲試験後の被屈曲部の{001}<100>の方位に配向する結晶粒の面積率が75%以上である集合組織を有することを特徴とする、フラットケーブル。
Rolled texture consisting of either tough pitch copper or oxygen-free copper and having an area ratio of crystal grains of 25% or more oriented in the direction of {123} <634> with an allowable deviation angle of 0 ° to 12.5 °. comprising a predetermined number of conductors having,
As a result of performing an IPC bending test under test conditions of 50 ° C. or higher, a stroke length of 10 mm to 15 mm, and a bending speed of 10 to 500 rotations / minute, the conductor was found to be {001 of the bent portion after the bending test 100,000 times. } grain area ratio of oriented along <100> is characterized Rukoto that have a at which texture 75% or more, the flat cable.
前記導体の厚み方向における結晶粒の寸法の平均値が3μm以下であり、且つ、前記導体の幅方向における前記結晶粒の寸法を前記導体の厚み方向における前記結晶粒の寸法で除した値の平均値が3以上であることを特徴とする、請求項1記載のフラットケーブル。 The average value of the crystal grain dimensions in the thickness direction of the conductor is 3 μm or less, and the average value obtained by dividing the grain size in the width direction of the conductor by the crystal grain size in the thickness direction of the conductor. The flat cable according to claim 1, wherein the value is 3 or more. 前記導体の0.2%耐力が400MPa以上であり、且つ160〜200℃、0.1s〜5sでの加熱処理後の前記導体の0.2%耐力が300MPa以上であることを特徴とする、請求項1又は2記載のフラットケーブル。 The conductor has a 0.2% proof stress of 400 MPa or more, and the conductor has a 0.2% proof stress of 300 MPa or more after heat treatment at 160 to 200 ° C. and 0.1 s to 5 s. The flat cable according to claim 1 or 2. 160〜200℃、0.1s〜5sの加熱条件で融解可能な材料からなる接着層と、前記加熱条件で融解しない材料からなる一対の絶縁シートとを更に備え、
前記導体は、前記接着層を介して前記一対の絶縁シートに挟み込まれるように配置されてラミネート構造を構成していることを特徴とする、請求項1〜3のいずれか1項に記載のフラットケーブル。
An adhesive layer made of a material that can be melted under heating conditions of 160 to 200 ° C. and 0.1s to 5s, and a pair of insulating sheets made of a material that does not melt under the heating conditions are further provided.
The flat according to any one of claims 1 to 3, wherein the conductor is arranged so as to be sandwiched between the pair of insulating sheets via the adhesive layer to form a laminated structure. cable.
前記絶縁シートが、ポリエチレンテレフタレートからなることを特徴とする、請求項記載のフラットケーブル。 The flat cable according to claim 4 , wherein the insulating sheet is made of polyethylene terephthalate. 請求項1〜5のいずれか1項に記載のフラットケーブルを備える回転コネクタ装置。 A rotary connector device including the flat cable according to any one of claims 1 to 5. タフピッチ銅及び無酸素銅のいずれかからなり、且つ{123}<634>の方位に許容ずれ角0°〜12.5°で配向する結晶粒の面積率が25%以上である圧延加工集合組織を有する所定数の導体を備え、50℃以上、ストローク長さ10mm〜15mm、屈曲速度10〜500回転/分の試験条件下にてIPC屈曲試験を行った結果、前記導体は、10万回屈曲試験後の被屈曲部の{001}<100>の方位に配向する結晶粒の面積率が75%以上である集合組織を有するフラットケーブルの製造方法であって、
タフピッチ銅及び無酸素銅のいずれかからなる材料の鋳造工程、熱間圧延工程及び冷間圧延工程の後、熱処理工程と、最終圧延工程とを有し、
前記熱処理工程における熱処理条件が、200〜700℃、15s〜5hであり、
前記最終圧延工程における圧延率が75%以上である、
ことを特徴とする、フラットケーブルの製造方法。
Rolled texture consisting of either tough pitch copper or oxygen-free copper and having an area ratio of crystal grains of 25% or more oriented at a permissible deviation angle of 0 ° to 12.5 ° in the orientation of {123} <634>. comprising a predetermined number of conductors with, 50 ° C. or more, the stroke length 10 mm to 15 mm, a result of the IPC bending test at a bending speed of 10 to 500 rev / min of the test conditions, the conductor is 100,000 times bending a method of manufacturing a flat cable that crystal grains of the area ratio of oriented along {001} <100> of the bent portion after test have a texture 75% or more,
It has a heat treatment step and a final rolling step after a casting step, a hot rolling step and a cold rolling step of a material made of either tough pitch copper or oxygen-free copper.
The heat treatment conditions in the heat treatment step are 200 to 700 ° C. and 15s to 5h.
The rolling ratio in the final rolling step is 75% or more.
A method of manufacturing a flat cable, which is characterized in that.
タフピッチ銅及び無酸素銅のいずれかからなり、且つ{123}<634>の方位に許容ずれ角0°〜12.5°で配向する結晶粒の面積率が25%以上である圧延加工集合組織を有する所定数の導体を備え、50℃以上、ストローク長さ10mm〜15mm、屈曲速度10〜500回転/分の試験条件下にてIPC屈曲試験を行った結果、前記導体は、10万回屈曲試験後の被屈曲部の{001}<100>の方位に配向する結晶粒の面積率が75%以上である集合組織を有するフラットケーブルの製造方法であって、
タフピッチ銅及び無酸素銅のいずれかからなる材料の鋳造工程、熱間圧延工程及び冷間圧延工程の後、第1熱処理工程と、第1圧延工程と、第2熱処理工程と、最終圧延工程とを有し、
前記第1熱処理工程における熱処理条件が、200〜700℃、15s〜5hであり、
前記第1圧延工程における圧延率が、75%以下であり、
前記第2熱処理工程における熱処理条件が、200〜700℃、15s〜5hであり、
前記最終圧延工程における圧延率が75%以上である、
ことを特徴とする、フラットケーブルの製造方法。
Rolled texture consisting of either tough pitch copper or oxygen-free copper and having an area ratio of crystal grains of 25% or more oriented at a permissible deviation angle of 0 ° to 12.5 ° in the orientation of {123} <634>. comprising a predetermined number of conductors with, 50 ° C. or more, the stroke length 10 mm to 15 mm, a result of the IPC bending test at a bending speed of 10 to 500 rev / min of the test conditions, the conductor is 100,000 times bending a method of manufacturing a flat cable that crystal grains of the area ratio of oriented along {001} <100> of the bent portion after test have a texture 75% or more,
After the casting step, hot rolling step and cold rolling step of the material consisting of tough pitch copper or oxygen-free copper, the first heat treatment step, the first rolling step, the second heat treatment step, and the final rolling step Have,
The heat treatment conditions in the first heat treatment step are 200 to 700 ° C. and 15s to 5h.
The rolling ratio in the first rolling step is 75% or less.
The heat treatment conditions in the second heat treatment step are 200 to 700 ° C. and 15s to 5h.
The rolling ratio in the final rolling step is 75% or more.
A method of manufacturing a flat cable, which is characterized in that.
前記最終圧延工程の後、当該最終圧延工程で得られた所定数の導体を、160〜200℃、0.1s〜5sの加熱条件で融解可能な接着剤を介して、前記加熱条件で融解しない2枚の絶縁シートで挟み込んでラミネート構造を形成するラミネート処理工程を更に有し、
前記ラミネート処理工程における加熱条件が、160〜200℃、0.1s〜5sであることを特徴とする、請求項7又は8記載のフラットケーブルの製造方法。
After the final rolling step, a predetermined number of conductors obtained in the final rolling step are not melted under the heating conditions via an adhesive that can be melted under heating conditions of 160 to 200 ° C. and 0.1s to 5s. It further has a laminating process of forming a laminating structure by sandwiching it between two insulating sheets.
The method for manufacturing a flat cable according to claim 7 or 8 , wherein the heating conditions in the laminating process are 160 to 200 ° C. and 0.1 s to 5 s.
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