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JP7673382B2 - Electrostatic chuck device and method for manufacturing electrostatic chuck device - Google Patents
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JP7673382B2 - Electrostatic chuck device and method for manufacturing electrostatic chuck device - Google Patents

Electrostatic chuck device and method for manufacturing electrostatic chuck device Download PDF

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JP7673382B2
JP7673382B2 JP2020185543A JP2020185543A JP7673382B2 JP 7673382 B2 JP7673382 B2 JP 7673382B2 JP 2020185543 A JP2020185543 A JP 2020185543A JP 2020185543 A JP2020185543 A JP 2020185543A JP 7673382 B2 JP7673382 B2 JP 7673382B2
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electrostatic chuck
base member
temperature adjustment
adjustment base
protrusions
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JP2022075025A (en
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進一 前田
幸夫 三浦
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Sumitomo Osaka Cement Co Ltd
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Sumitomo Osaka Cement Co Ltd
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Description

本発明は、静電チャック装置および静電チャック装置の製造方法に関する。 The present invention relates to an electrostatic chuck device and a method for manufacturing an electrostatic chuck device.

静電チャック装置は、静電チャック部材となる誘電体の内部に静電吸着用内部電極が設けられたものである。静電チャック装置では、静電チャック部材の載置面に半導体ウエハ等の板状試料を載置し、板状試料と静電吸着用内部電極との間に静電気力を発生させて、板状試料を吸着固定する。 An electrostatic chuck device has an internal electrode for electrostatic attraction provided inside a dielectric material that serves as an electrostatic chuck member. In the electrostatic chuck device, a plate-shaped sample such as a semiconductor wafer is placed on the mounting surface of the electrostatic chuck member, and an electrostatic force is generated between the plate-shaped sample and the internal electrode for electrostatic attraction, thereby adsorbing and fixing the plate-shaped sample.

静電チャック部材は、接着剤層を介して温度調整用ベース部材と接合・一体化され、温度調整用ベース部材によって温度が一定に保たれる。
従来、接着剤層の厚さを一定に保つために、接着剤層内には、スペーサが設けられている(例えば、特許文献1、2参照)。
The electrostatic chuck member is joined and integrated with a temperature adjusting base member via an adhesive layer, and the temperature is kept constant by the temperature adjusting base member.
Conventionally, in order to keep the thickness of the adhesive layer constant, a spacer is provided within the adhesive layer (see, for example, Patent Documents 1 and 2).

特開2016-058748号公報JP 2016-058748 A 特開2017-059771号公報JP 2017-059771 A

しかしながら、接着剤層内に、接着剤層とは組成が異なるスペーサを設けると、使用時の熱応力によって、スペーサが静電チャック部材もしくは温度調整用ベース部材がから剥離し、それに起因して、静電チャック部材の載置面の温度の均一性が損なわれたり、静電チャック部材に電圧を印加した際に放電が生じたりするという課題があった。 However, if a spacer having a different composition from that of the adhesive layer is provided within the adhesive layer, thermal stress during use can cause the spacer to peel off from the electrostatic chuck member or the temperature adjustment base member, which can lead to problems such as loss of temperature uniformity on the mounting surface of the electrostatic chuck member or generation of discharge when a voltage is applied to the electrostatic chuck member.

本発明は、上記事情に鑑みてなされたものであって、静電チャック部材の載置面の温度の均一性を長期間確保し、静電チャック部材に電圧を印加した際に放電が生じることを抑制する静電チャック装置および静電チャック装置の製造方法を提供することを目的とする。 The present invention has been made in consideration of the above circumstances, and aims to provide an electrostatic chuck device and a method for manufacturing an electrostatic chuck device that ensures temperature uniformity on the mounting surface of an electrostatic chuck member for a long period of time and suppresses discharge when a voltage is applied to the electrostatic chuck member.

上記の課題を解決するため、本発明の一態様は、セラミックスからなる静電チャック部材と、金属からなる温度調整用ベース部材と、接着剤層と、を備える静電チャック装置であって、前記静電チャック部材と前記温度調整用ベース部材とが接合する接合面において、前記静電チャック部材と前記温度調整用ベース部材のいずれか一方に粗面を有し、前記粗面を有する前記接合面を、前記接着剤層を介して、前記静電チャック部材と前記温度調整用ベース部材が接合されていることを特徴とする静電チャック装置を提供する。 In order to solve the above problems, one aspect of the present invention provides an electrostatic chuck device comprising an electrostatic chuck member made of ceramics, a temperature adjustment base member made of metal, and an adhesive layer, characterized in that at the joining surface where the electrostatic chuck member and the temperature adjustment base member are joined, either the electrostatic chuck member or the temperature adjustment base member has a rough surface, and the electrostatic chuck member and the temperature adjustment base member are joined to the joining surface having the rough surface via the adhesive layer.

本発明の一態様においては、前記粗面は、突起であってもよい。 In one aspect of the present invention, the rough surface may be a protrusion.

本発明の一態様においては、前記突起の高さを、25μm以上400μm以下としてもよい。 In one aspect of the present invention, the height of the protrusions may be 25 μm or more and 400 μm or less.

本発明の一態様においては、前記粗面において、前記接合面の算術平均粗さ(Ra)を0.01μm以上2.0μm以下としてもよい。 In one aspect of the present invention, the rough surface may have an arithmetic mean roughness (Ra) of the joining surface of 0.01 μm or more and 2.0 μm or less.

本発明の一様態は、セラミックスからなる静電チャック部材と、金属からなる温度調整用ベース部材とを、接着剤層を介して接合してなる静電チャック装置の製造方法であって、前記静電チャック部材における前記温度調整用ベース部材と接合する接合面のどちらかに凸部を形成する粗面加工を施す工程と、前記粗面加工を施した前記接合面を、接着剤を介して、前記静電チャック部材と前記温度調整用ベース部材と接合する工程と、を有する静電チャック装置の製造方法を提供する。 One aspect of the present invention provides a method for manufacturing an electrostatic chuck device in which an electrostatic chuck member made of ceramics and a temperature adjustment base member made of metal are bonded via an adhesive layer, the method including the steps of: roughening one of the bonding surfaces of the electrostatic chuck member that is bonded to the temperature adjustment base member to form a convex portion; and bonding the roughened bonding surface to the electrostatic chuck member and the temperature adjustment base member via an adhesive.

本発明によれば、静電チャック部材の載置面の温度の均一性を長期間確保し、静電チャック部材に電圧を印加した際に放電が生じることを抑制する静電チャック装置および静電チャック装置を提供することができる。 The present invention provides an electrostatic chuck device and electrostatic chuck apparatus that ensures temperature uniformity of the mounting surface of the electrostatic chuck member for a long period of time and suppresses discharge when a voltage is applied to the electrostatic chuck member.

本発明の一実施形態に係る静電チャック装置の断面図である。1 is a cross-sectional view of an electrostatic chuck device according to an embodiment of the present invention.

以下、図面を参照して本発明に係る静電チャック装置および静電チャック装置の製造方法の実施の形態について説明する。なお、以下の説明で用いる図面は、便宜上、特徴となる部分を拡大して示しており、各構成要素の寸法比率等は、実際とは異なる場合がある。また、以下の説明において例示される材料、寸法等は一例であって、本発明はそれらに限定されるものではなく、その要旨を変更しない範囲で適宜変更できる。 Below, an embodiment of an electrostatic chuck device and a method for manufacturing an electrostatic chuck device according to the present invention will be described with reference to the drawings. Note that the drawings used in the following description show enlarged views of characteristic parts for the sake of convenience, and the dimensional ratios of each component may differ from the actual ones. Furthermore, the materials, dimensions, etc. exemplified in the following description are merely examples, and the present invention is not limited to them, and may be modified as appropriate within the scope of the present invention.

[静電チャック装置]
本発明の一実施形態に係る静電チャック装置は、セラミックスからなる静電チャック部材と、金属からなる温度調整用ベース部材と、接着剤層と、を備える静電チャック装置であって、前記静電チャック部材と前記温度調整用ベース部材とが接合する接合面において、前記静電チャック部材と前記温度調整用ベース部材のいずれか一方に粗面を有し、前記接着剤層を介して、前記静電チャック部材と前記温度調整用ベース部材が接合されているものである。
[Electrostatic chuck device]
An electrostatic chuck device according to one embodiment of the present invention is an electrostatic chuck device comprising an electrostatic chuck member made of ceramics, a temperature adjustment base member made of metal, and an adhesive layer, wherein at a joining surface where the electrostatic chuck member and the temperature adjustment base member are joined, either the electrostatic chuck member or the temperature adjustment base member has a rough surface, and the electrostatic chuck member and the temperature adjustment base member are joined via the adhesive layer.

「静電チャック装置」
まず、図1を参照しながら、本実施形態の静電チャック装置について説明する。
図1は、本実施形態における静電チャック装置を示す断面図である。
図1に示すように、本実施形態の静電チャック装置1は、円板状の静電チャック部材2と、静電チャック部材2を所望の温度に調整する円板状の温度調節用ベース部材3と、これら静電チャック部材2および温度調整用ベース部材3を接合・一体化する接着剤層4と、を有している。
以下の説明においては、載置板11の載置面11a側を「上」、温度調整用ベース部材3側を「下」として記載し、各構成の相対位置を表すことがある。
"Electrostatic chuck device"
First, an electrostatic chuck device according to the present embodiment will be described with reference to FIG.
FIG. 1 is a cross-sectional view showing an electrostatic chuck device according to the present embodiment.
As shown in FIG. 1 , an electrostatic chuck device 1 of the present embodiment includes a disk-shaped electrostatic chuck member 2, a disk-shaped temperature adjustment base member 3 that adjusts the electrostatic chuck member 2 to a desired temperature, and an adhesive layer 4 that bonds and integrates the electrostatic chuck member 2 and the temperature adjustment base member 3.
In the following description, the side of the mounting surface 11a of the mounting plate 11 will be referred to as "upper" and the side of the temperature adjusting base member 3 as "lower" to indicate the relative positions of each component.

「静電チャック部材」
静電チャック部材2は、上面が半導体ウエハ等の板状試料を載置する載置面11aとされたセラミックスからなる載置板11と、載置板11の載置面11aとは反対の面側に設けられた支持板12と、これら載置板11と支持板12との間に挟持された静電吸着用電極13と、載置板11と支持板12とに挟持され静電吸着用電極13の周囲を囲む環状の絶縁材14と、静電吸着用電極13に接するように支持板12の貫通孔15内に設けられた給電端子16と、温度調節用ベース部材3の固定孔17内に設けられた電極ピン18と、を有している。
"Electrostatic chuck components"
The electrostatic chuck member 2 includes a mounting plate 11 made of ceramics having an upper surface serving as a mounting surface 11a on which a plate-like sample such as a semiconductor wafer is placed, a support plate 12 provided on the side of the mounting plate 11 opposite the mounting surface 11a, an electrostatic attraction electrode 13 held between the mounting plate 11 and the support plate 12, a ring-shaped insulating material 14 held between the mounting plate 11 and the support plate 12 and surrounding the electrostatic attraction electrode 13, a power supply terminal 16 provided in a through hole 15 of the support plate 12 so as to be in contact with the electrostatic attraction electrode 13, and an electrode pin 18 provided in a fixing hole 17 of the temperature control base member 3.

「載置板」
載置板11の載置面11aには、半導体ウエハ等の板状試料を支持するための多数の突起が立設され(図示略)ている。さらに、載置板11の載置面11aの周縁部には、ヘリウム(He)等の冷却ガスが漏れないように、この周縁部を一周するように、断面四角形状の環状突起部が設けられていてもよい。さらに、この載置面11a上の環状突起部に囲まれた領域には、環状突起部と高さが同一であり横断面が円形状かつ縦断面が略矩形状の複数の突起部が設けられていてもよい。
"Placement plate"
A number of protrusions (not shown) are provided on the mounting surface 11a of the mounting plate 11 to support a plate-shaped sample such as a semiconductor wafer. Furthermore, a circular protrusion having a square cross section may be provided around the periphery of the mounting surface 11a of the mounting plate 11 to prevent leakage of a cooling gas such as helium (He). Furthermore, a plurality of protrusions having the same height as the circular protrusion, a circular cross section, and a substantially rectangular vertical section may be provided in the area surrounded by the circular protrusion on the mounting surface 11a.

載置板11の材料は、体積固有抵抗値が1013Ω・cm以上かつ1015Ω・cm以下程度であり、機械的な強度を有し、しかも腐食性ガスおよびそのプラズマに対する耐久性を有するものであれば、特に限定されない。このような材料としては、例えば、酸化アルミニウム(Al)焼結体、窒化アルミニウム(AlN)焼結体、酸化アルミニウム(Al)-炭化ケイ素(SiC)複合焼結体等が挙げられるが、高温での誘電特性、高耐食性、耐プラズマ性、耐熱性の観点から、酸化アルミニウム(Al)-炭化ケイ素(SiC)複合焼結体が好ましい。 The material of the mounting plate 11 is not particularly limited as long as it has a volume resistivity of about 10 13 Ω·cm or more and 10 15 Ω·cm or less, mechanical strength, and durability against corrosive gas and its plasma. Examples of such materials include aluminum oxide (Al 2 O 3 ) sintered body, aluminum nitride (AlN) sintered body, aluminum oxide (Al 2 O 3 )-silicon carbide (SiC) composite sintered body, etc., but aluminum oxide (Al 2 O 3 )-silicon carbide (SiC) composite sintered body is preferable from the viewpoints of dielectric properties at high temperatures, high corrosion resistance, plasma resistance, and heat resistance.

「支持板」
支持板12は、載置板11と静電吸着用電極13を下側から支持している。
"Support plate"
The support plate 12 supports the mounting plate 11 and the electrostatic attraction electrode 13 from below.

支持板12の材料は、載置板11の材料と同一である。 The material of the support plate 12 is the same as the material of the mounting plate 11.

支持板12は、温度調節用ベース部材3と接合する面(接合面)12aが粗面となっている。具体的には、支持板12は、温度調節用ベース部材3と接合する面(接合面)12aの粗面は、突起19であることが好ましい。
突起19は、接着剤層4の厚さを均一にするために設けられたものである。
The support plate 12 has a rough surface (joint surface) 12a which is joined to the temperature adjusting base member 3. Specifically, the rough surface of the support plate 12, which is joined to the temperature adjusting base member 3 (joint surface) 12a, is preferably provided with protrusions 19.
The protrusions 19 are provided to make the thickness of the adhesive layer 4 uniform.

突起19の形状としては、特に限定されず、例えば、接合面12a側から見た場合の形状が、三角形状、四角形状、五角形以上の多角形状、円形状、楕円形状等が挙げられる。 The shape of the protrusion 19 is not particularly limited, and examples of the shape when viewed from the joining surface 12a side include a triangular shape, a rectangular shape, a polygonal shape with pentagons or more sides, a circular shape, an elliptical shape, etc.

接合面12aを基準とする突起19の高さは、25μm以上400μm以下であることが好ましく、50μm以上350μm以下であることがより好ましい。突起19の高さが25μm以上であれば、接着剤層4の厚さを均一にすることができる。一方、突起19の高さが400μm以下であれば、熱による応力緩和を吸収し、耐電圧の低下を防ぐことができるうえ、熱の伝達に影響がない。接合面12aを基準とする突起19の高さが前記範囲内であれば、静電チャック部材2の載置面(載置板11の載置面11a)の温度の均一性を確保することができる。また、静電チャック部材2に電圧を印加した際に放電が生じることを抑制することができる。 The height of the protrusions 19 based on the joining surface 12a is preferably 25 μm or more and 400 μm or less, and more preferably 50 μm or more and 350 μm or less. If the height of the protrusions 19 is 25 μm or more, the thickness of the adhesive layer 4 can be made uniform. On the other hand, if the height of the protrusions 19 is 400 μm or less, stress relaxation due to heat can be absorbed, a decrease in the withstand voltage can be prevented, and there is no effect on heat transfer. If the height of the protrusions 19 based on the joining surface 12a is within the above range, the temperature uniformity of the mounting surface of the electrostatic chuck member 2 (the mounting surface 11a of the mounting plate 11) can be ensured. In addition, the occurrence of discharge when a voltage is applied to the electrostatic chuck member 2 can be suppressed.

突起19の高さ、表面粗さ輪郭形状複合測定器(商品名:SURFCOM NEX 東京精密社製)によって測定する。 The height of the protrusions 19 is measured using a surface roughness and contour shape composite measuring device (product name: SURFCOM NEX, manufactured by Tokyo Seimitsu Co., Ltd.).

接合面12aの算術平均粗さ(Ra)は0.01μm以上2.0μm以下であることが好ましく、0.1μm以上1.5μm以下であることがより好ましい。接合面12aの算術平均粗さ(Ra)が前記下限値以上であれば、接着剤層4の厚さを均一にすることができる。接合面12aの算術平均粗さ(Ra)が前記上限値以下であれば、アンカー効果による接着性の向上が得られ、さらに接着剤層4と接合面に気泡が残らないので好ましい。接合面12aの算術平均粗さ(Ra)が前記範囲内であれば、静電チャック部材2の載置面(載置板11の載置面11a)の温度の均一性を確保することができる。また、静電チャック部材2に電圧を印加した際に放電が生じることを抑制することができる。 The arithmetic mean roughness (Ra) of the joining surface 12a is preferably 0.01 μm or more and 2.0 μm or less, and more preferably 0.1 μm or more and 1.5 μm or less. If the arithmetic mean roughness (Ra) of the joining surface 12a is equal to or more than the lower limit, the thickness of the adhesive layer 4 can be made uniform. If the arithmetic mean roughness (Ra) of the joining surface 12a is equal to or less than the upper limit, the adhesiveness is improved by the anchor effect, and air bubbles do not remain between the adhesive layer 4 and the joining surface, which is preferable. If the arithmetic mean roughness (Ra) of the joining surface 12a is within the above range, the temperature uniformity of the mounting surface of the electrostatic chuck member 2 (the mounting surface 11a of the mounting plate 11) can be ensured. In addition, the occurrence of discharge when a voltage is applied to the electrostatic chuck member 2 can be suppressed.

接合面12aの算術平均粗さ(Ra)は、東京精密社製の触針式の表面粗さ計を用いて、JIS B 0601:2013「製品の幾何特性仕様(GPS)-表面性状:輪郭曲線方式-用語,定義及び表面性状パラメータ」に準じて測定する。 The arithmetic mean roughness (Ra) of the joining surface 12a is measured using a Tokyo Seimitsu stylus-type surface roughness tester in accordance with JIS B 0601:2013 "Geometric product specifications (GPS) - Surface quality: profile curve method - Terms, definitions and surface quality parameters."

突起19を接合面12a側から見た場合の外径は、0.05mm以上3.0mm以下であることが好ましく、0.1mm以上2.0mm以下であることがより好ましい。突起19の外径が前記下限値以上であれば、接着剤層4の厚さを均一にすることができる。突起19の外径が前記上限値以下であれば、突起19が接合面に食い込み、変形することがなく、十分な接着強度が得られる。突起19を接合面12a側から見た場合の外径が前記範囲内であれば、静電チャック部材2の載置面(載置板11の載置面11a)の温度の均一性を確保することができる。また、静電チャック部材2に電圧を印加した際に放電が生じることを抑制することができる。
なお、接合面12a側から見た場合の突起19の形状が円形状である場合には円の直径、接合面12a側から見た場合の突起19の形状が楕円形状である場合には楕円の長径、接合面12a側から見た場合の突起19の形状が三角形状である場合には三角形の最も長い辺、接合面12a側から見た場合の突起19の形状が四角形状または多角形状である場合には最も長い対角線が、突起19の外径である。
The outer diameter of the protrusion 19 as viewed from the joining surface 12a side is preferably 0.05 mm or more and 3.0 mm or less, and more preferably 0.1 mm or more and 2.0 mm or less. If the outer diameter of the protrusion 19 is equal to or more than the lower limit, the thickness of the adhesive layer 4 can be made uniform. If the outer diameter of the protrusion 19 is equal to or less than the upper limit, the protrusion 19 does not bite into the joining surface and does not deform, and sufficient adhesive strength can be obtained. If the outer diameter of the protrusion 19 as viewed from the joining surface 12a side is within the above range, the temperature uniformity of the mounting surface of the electrostatic chuck member 2 (the mounting surface 11a of the mounting plate 11) can be ensured. In addition, it is possible to suppress the occurrence of discharge when a voltage is applied to the electrostatic chuck member 2.
In addition, the outer diameter of protrusion 19 is the diameter of the circle if the shape of protrusion 19 when viewed from the joining surface 12a side is circular; the outer diameter of protrusion 19 is the major axis of the ellipse if the shape of protrusion 19 when viewed from the joining surface 12a side is elliptical; the outer diameter of protrusion 19 is the longest side of the triangle if the shape of protrusion 19 when viewed from the joining surface 12a side is triangular; and the outer diameter of protrusion 19 is the longest diagonal if the shape of protrusion 19 when viewed from the joining surface 12a side is rectangular or polygonal.

接合面12aにおいて、突起19が占める割合(占有率)は、接合面12aの全面積100%に対して、0.01%以上5.0%以下であることが好ましく、0.5%以上3.5%以下であることがより好ましい。突起19の占有率が前記下限値以上であれば、接着剤層4の厚さを均一にすることができる。突起19の占有率が前記上限値以下であれば、接着剤層の厚みにばらつきが発生しないうえ、接着強度も確保できる。接合面12aにおいて、突起19が占める割合(占有率)が前記範囲内であれば、静電チャック部材2の載置面(載置板11の載置面11a)の温度の均一性を確保することができる。また、静電チャック部材2に電圧を印加した際に放電が生じることを抑制することができる。 The ratio (occupancy rate) of the projections 19 on the joining surface 12a is preferably 0.01% to 5.0% and more preferably 0.5% to 3.5% of the total area of the joining surface 12a. If the occupancy rate of the projections 19 is equal to or greater than the lower limit, the thickness of the adhesive layer 4 can be made uniform. If the occupancy rate of the projections 19 is equal to or less than the upper limit, the thickness of the adhesive layer does not vary and the adhesive strength can be ensured. If the ratio (occupancy rate) of the projections 19 on the joining surface 12a is within the above range, the temperature uniformity of the mounting surface of the electrostatic chuck member 2 (mounting surface 11a of the mounting plate 11) can be ensured. In addition, the occurrence of discharge when a voltage is applied to the electrostatic chuck member 2 can be suppressed.

「静電吸着用電極」
静電吸着用電極13では、電圧を印加することにより、載置板11の載置面11aに板状試料を保持する静電吸着力が生じる。
"Electrostatic adhesion electrode"
When a voltage is applied to the electrostatic attraction electrode 13 , an electrostatic attraction force is generated to hold the plate-shaped sample on the mounting surface 11 a of the mounting plate 11 .

静電吸着用電極13は、絶縁性物質と導電性物質の複合体である。 The electrostatic adsorption electrode 13 is a composite of an insulating material and a conductive material.

静電吸着用電極13に含まれる絶縁性物質は、特に限定されないが、例えば、酸化アルミニウム(Al)、窒化アルミニウム(AlN)、窒化ケイ素(Si)、酸化イットリウム(III)(Y)、イットリウム・アルミニウム・ガーネット(YAG)およびSmAlOからなる群から選択される少なくとも1種であることが好ましい。 The insulating material contained in the electrostatic attraction electrode 13 is not particularly limited, but is preferably at least one selected from the group consisting of aluminum oxide ( Al2O3 ), aluminum nitride (AlN), silicon nitride ( Si3N4 ), yttrium( III ) oxide ( Y2O3 ), yttrium aluminum garnet (YAG), and SmAlO3 .

静電吸着用電極13に含まれる導電性物質は、炭化モリブデン(MoC)、モリブデン(Mo)、炭化タングステン(WC)、タングステン(W)、炭化タンタル(TaC)、タンタル(Ta)、炭化ケイ素(SiC)、カーボンブラック、カーボンナノチューブおよびカーボンナノファイバーからなる群から選択される少なくとも1種であることが好ましい。 The conductive material contained in the electrostatic attraction electrode 13 is preferably at least one selected from the group consisting of molybdenum carbide ( Mo2C ), molybdenum (Mo), tungsten carbide (WC), tungsten (W), tantalum carbide (TaC), tantalum (Ta), silicon carbide (SiC), carbon black, carbon nanotubes, and carbon nanofibers.

「絶縁材」
絶縁材14は、静電吸着用電極13を囲繞して腐食性ガスおよびそのプラズマから静電吸着用電極13を保護するためのものである。
絶縁材14により、載置板11と支持板12とが、静電吸着用電極13を介して接合一体化されている。
"Insulation material"
The insulating material 14 surrounds the electrostatic attraction electrode 13 to protect the electrostatic attraction electrode 13 from corrosive gases and their plasma.
The mounting plate 11 and the support plate 12 are joined together via the electrostatic attraction electrode 13 by an insulating material 14 .

絶縁材14は、載置板11と支持板12の境界部、すなわち静電吸着用電極13形成部以外の外縁部領域を接合するために設けられたものである。絶縁材14の形状(絶縁材14を平面視した(厚さ方向から見た)場合の形状)は、特に限定されず、静電吸着用電極13の形状に応じて適宜調整される。
本実施形態の静電チャック装置1では、絶縁材14の厚さは、静電吸着用電極13の厚さと等しくなっている。
The insulating material 14 is provided to join the boundary between the mounting plate 11 and the support plate 12, i.e., the outer edge region other than the portion forming the electrostatic attraction electrode 13. The shape of the insulating material 14 (the shape of the insulating material 14 when viewed in a plan view (viewed from the thickness direction)) is not particularly limited and is adjusted as appropriate depending on the shape of the electrostatic attraction electrode 13.
In the electrostatic chuck device 1 of the present embodiment, the thickness of the insulating material 14 is equal to the thickness of the electrostatic attraction electrode 13 .

絶縁材14は、絶縁性物質からなる。
絶縁材14を構成する絶縁性物質は、特に限定されないが、載置板11および支持板12の主成分と同じにすることが好ましく、例えば、酸化アルミニウム(Al)、窒化アルミニウム(AlN)、酸化イットリウム(Y)、イットリウム・アルミニウム・ガーネット(YAG)等が挙げられる。絶縁材14を構成する絶縁性物質は、酸化アルミニウム(Al)であることが好ましい。絶縁材14を構成する絶縁性物質が、酸化アルミニウム(Al)であることにより、高温での誘電特性、高耐食性、耐プラズマ性、耐熱性が保たれる。
The insulating material 14 is made of an insulating material.
The insulating material constituting the insulating material 14 is not particularly limited, but is preferably the same as the main component of the mounting plate 11 and the support plate 12, and examples thereof include aluminum oxide (Al 2 O 3 ), aluminum nitride (AlN), yttrium oxide (Y 2 O 3 ), yttrium aluminum garnet (YAG), etc. The insulating material constituting the insulating material 14 is preferably aluminum oxide (Al 2 O 3 ). By using aluminum oxide (Al 2 O 3 ) as the insulating material constituting the insulating material 14, the dielectric properties at high temperatures, high corrosion resistance, plasma resistance, and heat resistance are maintained.

「給電端子」
給電端子16は、静電吸着用電極13に電流を供給するものである。
給電端子16の数、形状等は、静電吸着用電極13の形態、すなわち単極型か、双極型かにより決定される。
"Power supply terminal"
The power supply terminal 16 supplies a current to the electrostatic attraction electrode 13 .
The number, shape, etc. of the power supply terminals 16 are determined depending on the type of the electrostatic attraction electrode 13, that is, whether it is a monopolar type or a bipolar type.

「電極ピン」
電極ピン18は、給電端子16に電流を供給するものである。
"Electrode pin"
The electrode pin 18 supplies a current to the power supply terminal 16 .

「温度調整用ベース部材」
温度調整用ベース部材3は、金属およびセラミックスの少なくとも一方からなる厚みのある円板状のものである。温度調整用ベース部材3の躯体は、プラズマ発生用内部電極を兼ねた構成とされている。温度調整用ベース部材3の躯体の内部には、水、Heガス、Nガス等の冷却媒体を循環させる流路21が形成されている。
"Temperature adjustment base material"
The temperature adjustment base member 3 is a thick disk-shaped member made of at least one of metal and ceramics. The body of the temperature adjustment base member 3 also serves as an internal electrode for generating plasma. Inside the body of the temperature adjustment base member 3, a flow path 21 is formed for circulating a cooling medium such as water, He gas, or N2 gas.

温度調整用ベース部材3の躯体は、外部の高周波電源22に接続されている。また、温度調整用ベース部材3の固定孔17内には、その外周が絶縁材料23により囲繞された電極ピン18が、絶縁材料23を介して固定されている。電極ピン18は、外部の直流電源24に接続されている。 The body of the temperature adjustment base member 3 is connected to an external high-frequency power source 22. In addition, an electrode pin 18, the outer periphery of which is surrounded by an insulating material 23, is fixed in the fixing hole 17 of the temperature adjustment base member 3 via the insulating material 23. The electrode pin 18 is connected to an external DC power source 24.

温度調整用ベース部材3を構成する材料は、熱伝導性、導電性、加工性に優れた金属、またはこれらの金属を含む複合材であれば特に制限されるものではない。温度調整用ベース部材3を構成する材料としては、例えば、アルミニウム(Al)、銅(Cu)、ステンレス鋼(SUS)、チタン(Ti)等が好適に用いられる。
温度調整用ベース部材3における少なくともプラズマに曝される面は、アルマイト処理またはポリイミド系樹脂による樹脂コーティングが施されていることが好ましい。また、温度調整用ベース部材3の全面が、前記のアルマイト処理または樹脂コーティングが施されていることがより好ましい。
The material constituting the temperature adjusting base member 3 is not particularly limited as long as it is a metal having excellent thermal conductivity, electrical conductivity, and workability, or a composite material containing such a metal. Suitable materials for the temperature adjusting base member 3 include, for example, aluminum (Al), copper (Cu), stainless steel (SUS), and titanium (Ti).
At least the surface of the temperature adjusting base member 3 that is exposed to plasma is preferably anodized or resin-coated with polyimide resin. More preferably, the entire surface of the temperature adjusting base member 3 is anodized or resin-coated.

温度調整用ベース部材3にアルマイト処理または樹脂コーティングを施すことにより、温度調整用ベース部材3の耐プラズマ性が向上するとともに、異常放電が防止される。したがって、温度調整用ベース部材3の耐プラズマ安定性が向上し、また、温度調整用ベース部材3の表面傷の発生も防止することができる。 By applying anodizing or resin coating to the temperature adjustment base member 3, the plasma resistance of the temperature adjustment base member 3 is improved and abnormal discharge is prevented. Therefore, the plasma resistance stability of the temperature adjustment base member 3 is improved and the occurrence of surface scratches on the temperature adjustment base member 3 can be prevented.

「接着剤層」
接着剤層4は、静電チャック部材2と、温度調整用ベース部材3とを接着一体化するものである。
"Adhesive layer"
The adhesive layer 4 bonds and integrates the electrostatic chuck member 2 and the temperature adjusting base member 3 together.

接着剤層4は、例えば、シリコーン系樹脂組成物を加熱硬化した硬化体、アクリル樹脂、エポキシ樹脂、ポリイミド樹脂等で形成されている。
シリコーン系樹脂組成物は、シロキサン結合(Si-O-Si)を有するケイ素化合物であり、耐熱性、弾性に優れた樹脂であるので、より好ましい。
The adhesive layer 4 is formed of, for example, a hardened product obtained by heating and hardening a silicone-based resin composition, an acrylic resin, an epoxy resin, a polyimide resin, or the like.
A silicone-based resin composition is a silicon compound having a siloxane bond (Si--O--Si), and is a resin having excellent heat resistance and elasticity, and is therefore more preferred.

このようなシリコーン系樹脂組成物としては、特に、熱硬化温度が70℃~140℃のシリコーン樹脂が好ましい。
ここで、熱硬化温度が70℃を下回ると、静電チャック部材2と温度調整用ベース部材3とを対向させた状態で接合する際に、接合過程で硬化が十分に進まないことから、作業性に劣ることになるため好ましくない。一方、熱硬化温度が140℃を超えると、静電チャック部材2および温度調整用ベース部材3との熱膨張差が大きく、静電チャック部材2と温度調整用ベース部材3との間の応力が増加し、これらの間で剥離が生じることがあるため好ましくない。
As such a silicone-based resin composition, a silicone resin having a heat curing temperature of 70°C to 140°C is particularly preferred.
Here, if the heat curing temperature is below 70° C., when the electrostatic chuck member 2 and the temperature adjustment base member 3 are joined in a facing state, the curing does not proceed sufficiently during the joining process, which is undesirable because workability is deteriorated. On the other hand, if the heat curing temperature exceeds 140° C., the thermal expansion difference between the electrostatic chuck member 2 and the temperature adjustment base member 3 becomes large, which increases the stress between the electrostatic chuck member 2 and the temperature adjustment base member 3, which is undesirable because peeling may occur between them.

本実施形態の静電チャック装置1によれば、静電チャック部材2を構成する支持板12が、温度調節用ベース部材3と接合する面(接合面)12aに突起19を有するため、静電チャック部材2と温度調整用ベース部材3とを接合する接着剤層4の厚さを均一にすることができる。その上、スペーサを用いたときにおこる接着面の剥離を低減させることができる。その結果、静電チャック部材2の載置面(載置板11の載置面11a)の温度の均一性を確保し、静電チャック部材2に電圧を印加した際に放電が生じることを抑制できる。 According to the electrostatic chuck device 1 of this embodiment, the support plate 12 constituting the electrostatic chuck member 2 has protrusions 19 on the surface (bonding surface) 12a that bonds with the temperature adjustment base member 3, so that the thickness of the adhesive layer 4 that bonds the electrostatic chuck member 2 and the temperature adjustment base member 3 can be made uniform. In addition, peeling of the adhesive surface that occurs when a spacer is used can be reduced. As a result, the temperature uniformity of the mounting surface of the electrostatic chuck member 2 (mounting surface 11a of the mounting plate 11) can be ensured, and discharge can be suppressed when a voltage is applied to the electrostatic chuck member 2.

なお、本実施形態では、静電チャック部材2を構成する支持板12における温度調節用ベース部材3と接合する面(接合面)12aに突起19を有する場合を例示したが、本発明はこれに限定されない。本発明では、温度調整用ベース部材における静電チャック部材と接合する面(接合面)に、上記の突起19と同様の突起を有していてもよい。 In the present embodiment, the surface (joint surface) 12a of the support plate 12 constituting the electrostatic chuck member 2 that is joined to the temperature adjustment base member 3 has the protrusions 19, but the present invention is not limited to this. In the present invention, the surface (joint surface) of the temperature adjustment base member that is joined to the electrostatic chuck member may have protrusions similar to the protrusions 19 described above.

「静電チャック装置の製造方法」
上述のような静電チャック部材2を用意する。
その静電チャック部材2における温度調整用ベース部材3と接合する面(接合面)2aを粗面加工する。言い換えれば、静電チャック部材2を構成する支持板12の接合面12aを粗面加工する。
"Method of manufacturing electrostatic chuck device"
The electrostatic chuck member 2 as described above is prepared.
A surface (joint surface) 2a of the electrostatic chuck member 2 which is joined to the temperature adjustment base member 3 is roughened. In other words, the joint surface 12a of the support plate 12 which constitutes the electrostatic chuck member 2 is roughened.

接合面12aを粗面加工する方法は、特に限定されないが、例えば、サンドブラスト加工、レシプロ加工、数値制御(NC)加工等が用いられる。 The method for roughening the joining surface 12a is not particularly limited, but examples include sandblasting, reciprocating machining, and numerical control (NC) machining.

接合面12aを粗面加工する工程において、上述のように、接合面12aに突起(凸部)19を形成することが好ましい。接合面12aに突起19を形成することにより、接着剤層4の厚さを均一にすることができる。 In the process of roughening the joining surface 12a, as described above, it is preferable to form protrusions (convex portions) 19 on the joining surface 12a. By forming the protrusions 19 on the joining surface 12a, the thickness of the adhesive layer 4 can be made uniform.

接合面12aを粗面加工する工程において、上述のように、突起の高さを、25μm以上400μm以下とすることが好ましく、50μm以上350μm以下とすることがより好ましい。突起19の高さが前記下限値以上であれば、接着剤層4の厚さを均一にすることができる。一方、突起19の高さが前記上限値以下であれば、熱による応力緩和を吸収し、耐電圧の低下を防ぐうえ、熱の伝達に影響がない。接合面12aを基準とする突起19の高さが前記範囲内であれば、静電チャック部材2の載置面(載置板11の載置面11a)の温度の均一性を確保することができる。また、静電チャック部材2に電圧を印加した際に放電が生じることを抑制することができる。 In the process of roughening the joining surface 12a, as described above, the height of the protrusions is preferably 25 μm or more and 400 μm or less, and more preferably 50 μm or more and 350 μm or less. If the height of the protrusions 19 is equal to or more than the lower limit, the thickness of the adhesive layer 4 can be made uniform. On the other hand, if the height of the protrusions 19 is equal to or less than the upper limit, the stress relaxation due to heat is absorbed, the decrease in the withstand voltage is prevented, and there is no effect on the transfer of heat. If the height of the protrusions 19 based on the joining surface 12a is within the above range, the uniformity of the temperature of the mounting surface of the electrostatic chuck member 2 (the mounting surface 11a of the mounting plate 11) can be ensured. In addition, the occurrence of discharge when a voltage is applied to the electrostatic chuck member 2 can be suppressed.

接合面12aを粗面加工する工程において、上述のように、接合面12aの算術平均粗さ(Ra)を0.01μm以上2.0μm以下であることが好ましく、0.1μm以上1.5μm以下とすることがより好ましい。接合面12aの算術平均粗さ(Ra)が前記下限値以上であれば、接着剤層4の厚さを均一にすることができる。接合面12aの算術平均粗さ(Ra)が前記上限値以下であれば、アンカー効果による接着性の向上が得られ、さらに接着剤層4と接合面に気泡が残らないので好ましい。接合面12aの算術平均粗さ(Ra)が前記範囲内であれば、静電チャック部材2の載置面(載置板11の載置面11a)の温度の均一性を確保することができる。また、静電チャック部材2に電圧を印加した際に放電が生じることを抑制することができる。 In the step of roughening the joining surface 12a, as described above, the arithmetic mean roughness (Ra) of the joining surface 12a is preferably 0.01 μm or more and 2.0 μm or less, and more preferably 0.1 μm or more and 1.5 μm or less. If the arithmetic mean roughness (Ra) of the joining surface 12a is equal to or more than the lower limit, the thickness of the adhesive layer 4 can be made uniform. If the arithmetic mean roughness (Ra) of the joining surface 12a is equal to or less than the upper limit, the adhesiveness is improved by the anchor effect, and air bubbles do not remain between the adhesive layer 4 and the joining surface, which is preferable. If the arithmetic mean roughness (Ra) of the joining surface 12a is within the above range, the temperature uniformity of the mounting surface of the electrostatic chuck member 2 (the mounting surface 11a of the mounting plate 11) can be ensured. In addition, the occurrence of discharge when a voltage is applied to the electrostatic chuck member 2 can be suppressed.

また、接合面12aを粗面加工する工程において、突起19を接合面12a側から見た場合の外径を、0.05mm以上3.0mm以下であることが好ましく、0.1mm以上2.0mm以下とすることがより好ましい。突起19の外径が前記下限値以上であれば、接着剤層4の厚さを均一にすることができる。突起19の外径が前記上限値以下であれば、突起19が接合面に食い込み、変形することがなく、十分な接着強度が得られる。突起19を接合面12a側から見た場合の外径が前記範囲内であれば、静電チャック部材2の載置面(載置板11の載置面11a)の温度の均一性を確保することができる。また、静電チャック部材2に電圧を印加した際に放電が生じることを抑制することができる。 In addition, in the process of roughening the joining surface 12a, the outer diameter of the protrusion 19 as viewed from the joining surface 12a side is preferably 0.05 mm or more and 3.0 mm or less, and more preferably 0.1 mm or more and 2.0 mm or less. If the outer diameter of the protrusion 19 is equal to or more than the lower limit, the thickness of the adhesive layer 4 can be made uniform. If the outer diameter of the protrusion 19 is equal to or less than the upper limit, the protrusion 19 does not bite into the joining surface and does not deform, and sufficient adhesive strength can be obtained. If the outer diameter of the protrusion 19 as viewed from the joining surface 12a side is within the above range, the temperature uniformity of the mounting surface of the electrostatic chuck member 2 (the mounting surface 11a of the mounting plate 11) can be ensured. In addition, the occurrence of discharge when a voltage is applied to the electrostatic chuck member 2 can be suppressed.

さらに、接合面12aを粗面加工する工程において、接合面12aにて、突起19が占める割合(占有率)を、接合面12aの全面積100%に対して、0.01%以上5.0%以下であることが好ましく、0.5%以上3.5%以下であることがより好ましい。突起19の占有率が前記下限値以上であれば、接着剤層4の厚さを均一にすることができる。突起19の占有率が前記上限値以下であれば、接着剤層の厚みにばらつきが発生しないうえ、接着強度も確保できる。接合面12aにおいて、突起19が占める割合(占有率)が前記範囲内であれば、静電チャック部材2の載置面(載置板11の載置面11a)の温度の均一性を確保することができる。また、静電チャック部材2に電圧を印加した際に放電が生じることを抑制することができる。 Furthermore, in the process of roughening the joining surface 12a, the ratio (occupancy rate) of the protrusions 19 on the joining surface 12a is preferably 0.01% to 5.0% and more preferably 0.5% to 3.5% of the total area of the joining surface 12a. If the occupancy rate of the protrusions 19 is equal to or greater than the lower limit, the thickness of the adhesive layer 4 can be made uniform. If the occupancy rate of the protrusions 19 is equal to or less than the upper limit, the thickness of the adhesive layer does not vary and the adhesive strength can be ensured. If the ratio (occupancy rate) of the joining surface 12a that the protrusions 19 occupy is within the above range, the temperature uniformity of the mounting surface of the electrostatic chuck member 2 (mounting surface 11a of the mounting plate 11) can be ensured. In addition, it is possible to suppress the occurrence of discharge when a voltage is applied to the electrostatic chuck member 2.

温度調整用ベース部材3の一主面(上面)3aの所定領域に、シリコーン系樹脂組成物からなる接着剤を塗布する。ここで、接着剤の塗布量を、静電チャック部材2と温度調整用ベース部材3とが接合一体化できるように調整する。
この接着剤の塗布方法としては、ヘラ等を用いて手動で塗布する他、バーコート法、スクリーン印刷法等が挙げられる。
An adhesive made of a silicone-based resin composition is applied to a predetermined region of one main surface (upper surface) 3a of the temperature adjustment base member 3. The amount of adhesive applied is adjusted so that the electrostatic chuck member 2 and the temperature adjustment base member 3 can be bonded and integrated together.
The adhesive can be applied manually using a spatula or the like, or by a bar coating method, a screen printing method, or the like.

上述のように粗面加工した接合面2aを、接着剤を介して、温度調整用ベース部材3と接合する。
より詳細には、温度調整用ベース部材3の一主面(上面)3aに接着剤を塗布した後、温度調整用ベース部材3側に接合面2aを向けて、静電チャック部材2と、接着剤を塗布した温度調整用ベース部材3とを重ね合わせる。
The joining surface 2a roughened as described above is joined to the temperature adjusting base member 3 via an adhesive.
More specifically, after applying adhesive to one main surface (upper surface) 3a of the temperature adjustment base member 3, the electrostatic chuck member 2 and the temperature adjustment base member 3 to which the adhesive has been applied are overlapped with each other with the joining surface 2a facing toward the temperature adjustment base member 3.

また、電極ピン18を、温度調整用ベース部材3中に穿孔された固定孔17に挿入し嵌め込む。
次いで、静電チャック部材2を温度調整用ベース部材3に対して所定の圧力にて押圧し、静電チャック部材2と温度調整用ベース部材3を接合一体化する。これにより、静電チャック部材2と温度調整用ベース部材3が接着剤層4を介して接合一体化されたものとなる。
Moreover, the electrode pin 18 is inserted and fitted into the fixing hole 17 drilled in the temperature adjusting base member 3 .
Next, the electrostatic chuck member 2 is pressed against the temperature adjustment base member 3 with a predetermined pressure to bond and integrate the electrostatic chuck member 2 and the temperature adjustment base member 3. As a result, the electrostatic chuck member 2 and the temperature adjustment base member 3 are bonded and integrated via the adhesive layer 4.

以上により、静電チャック部材2と温度調整用ベース部材3が接着剤層4を介して接合一体化された静電チャック装置1が得られる。 As a result of the above, an electrostatic chuck device 1 is obtained in which the electrostatic chuck member 2 and the temperature adjustment base member 3 are bonded together via the adhesive layer 4.

本実施形態の静電チャック装置の製造方法によれば、接合面12aを粗面加工することにより、静電チャック部材2と温度調整用ベース部材3とを接合する接着剤層4の厚さを均一にすることができる。その結果、静電チャック部材2の載置面(載置板11の載置面11a)の温度の均一性を確保し、静電チャック部材2に電圧を印加した際に放電が生じることを抑制できる静電チャック装置が得られる。 According to the manufacturing method of the electrostatic chuck device of this embodiment, the thickness of the adhesive layer 4 that bonds the electrostatic chuck member 2 and the temperature adjustment base member 3 can be made uniform by roughening the bonding surface 12a. As a result, an electrostatic chuck device is obtained that ensures uniformity in temperature of the mounting surface (mounting surface 11a of the mounting plate 11) of the electrostatic chuck member 2 and can suppress the occurrence of discharge when a voltage is applied to the electrostatic chuck member 2.

なお、本実施形態では、静電チャック部材2を構成する支持板12における温度調節用ベース部材3と接合する面(接合面)12aに突起19を形成する場合を例示したが、本発明はこれに限定されない。本発明では、温度調整用ベース部材における静電チャック部材と接合する面(接合面)に、上記の突起19と同様の突起を形成していてもよい。 In the present embodiment, the protrusions 19 are formed on the surface (joint surface) 12a of the support plate 12 constituting the electrostatic chuck member 2 that is joined to the temperature adjustment base member 3, but the present invention is not limited to this. In the present invention, protrusions similar to the protrusions 19 may be formed on the surface (joint surface) of the temperature adjustment base member that is joined to the electrostatic chuck member.

以下、実施例および比較例により本発明をさらに具体的に説明するが、本発明は以下の実施例に限定されるものではない。 The present invention will be explained in more detail below with reference to examples and comparative examples, but the present invention is not limited to the following examples.

「実施例1」
(静電チャック装置の作製)
公知の方法により、内部に厚み20μmの静電吸着用内部電極13が埋設された静電チャック部2を作製した。
この静電チャック部2の載置板11は、炭化ケイ素を8.5質量%含有する酸化アルミニウム-炭化ケイ素複合焼結体であり、直径は298mm、厚みは0.5mmの円板状であった。また、この載置板11の静電吸着面を、高さが40μmの多数の突起部16を形成することで凹凸面とし、これらの突起部16の頂面を板状試料Wの保持面とし、凹部と静電吸着された板状試料Wとの間に形成される溝に冷却ガスを流すことができるようにした。
"Example 1"
(Preparation of electrostatic chuck device)
An electrostatic chuck portion 2 having an electrostatic attraction internal electrode 13 with a thickness of 20 μm embedded therein was fabricated by a known method.
The mounting plate 11 of the electrostatic chuck portion 2 was an aluminum oxide-silicon carbide composite sintered body containing 8.5 mass % silicon carbide, and was disk-shaped with a diameter of 298 mm and a thickness of 0.5 mm. The electrostatic attraction surface of the mounting plate 11 was made uneven by forming a large number of protrusions 16 with a height of 40 μm, and the top surfaces of these protrusions 16 served as the holding surface for the plate-shaped sample W, allowing a cooling gas to flow through the grooves formed between the recesses and the electrostatically attracted plate-shaped sample W.

また、支持板12も載置板11と同様、炭化ケイ素を8.5質量%含有する酸化アルミニウム-炭化ケイ素複合焼結体であり、直径は298mm、厚みは2mmの円板状であった。
これら載置板11及び支持板12を接合一体化することにより、静電チャック部2の全体の厚みは2.5mmとなっていた。
Similarly to the mounting plate 11, the support plate 12 was an aluminum oxide-silicon carbide composite sintered body containing 8.5 mass % of silicon carbide, and was in the shape of a disk having a diameter of 298 mm and a thickness of 2 mm.
By joining the mounting plate 11 and the support plate 12 together, the overall thickness of the electrostatic chuck portion 2 was 2.5 mm.

一方、直径350mm、高さ30mmのアルミニウム製の温度調整用ベース部3を、機械加工により作製した。この温度調整用ベース部3の内部には冷媒を循環させる流路(図示略)を形成した。 On the other hand, a temperature adjustment base part 3 made of aluminum with a diameter of 350 mm and a height of 30 mm was produced by machining. Inside this temperature adjustment base part 3, a flow path (not shown) for circulating the refrigerant was formed.

次に、静電チャック部載置面の裏面側に、サンドブラスト加工法によって、φ0.5mm、高さ100μmの円柱状の突起を作成した。突起が占める割合(占有率)を、接合面の全面積100%に対して、1.0%(直径298mmの載置板の場合突起を3598個作製)とし、載置面の裏面に均一に配置されるように形成した。 Next, cylindrical protrusions with a diameter of 0.5 mm and a height of 100 μm were created on the back side of the mounting surface of the electrostatic chuck by sandblasting. The proportion (occupancy rate) of the protrusions was set to 1.0% of the total area of the bonding surface (100%) (3,598 protrusions were created for a mounting plate with a diameter of 298 mm), and they were formed so as to be uniformly distributed on the back side of the mounting surface.

次いで、温度調整用ベース部上に、スクリーン印刷法によりシリコーン系樹脂組成物を塗布し、次いで、静電チャック部と温度調整用ベース部とをシリコーン系樹脂組成物を介して重ね合わせた。
次いで、静電チャック部と温度調整用ベース部との間隔が100μmになるまで落し込んだのち、110℃にて12時間保持し、シリコーン系樹脂組成物を硬化させて静電チャック部と温度調整用ベース部とを接合させ、実施例1の静電チャック装置を作製した。
Next, a silicone-based resin composition was applied onto the temperature adjusting base part by a screen printing method, and then the electrostatic chuck part and the temperature adjusting base part were laminated together with the silicone-based resin composition interposed therebetween.
Next, the electrostatic chuck portion and the temperature adjusting base portion were lowered until the gap between them became 100 μm, and then the substrate was held at 110° C. for 12 hours to harden the silicone-based resin composition and bond the electrostatic chuck portion and the temperature adjusting base portion together, thereby producing the electrostatic chuck device of Example 1.

「接合面の表面粗さ(Ra)
シリコーン系樹脂組成物を塗布する前に、表面粗さ輪郭形状複合測定器(商品名:SURFCOM NEX 東京精密社製)を用いて測定した。結果を表1に示す。
"Surface roughness of the joint surface (Ra)
Before applying the silicone resin composition, the surface roughness and contour shape were measured using a composite measuring instrument (product name: SURFCOM NEX, manufactured by Tokyo Seimitsu Co., Ltd.). The results are shown in Table 1.

「実施例2」
突起部を温度調整用ベース部材に設けた以外は実施例1と同様にして、実施例2の静電チャック装置を作製した。結果を表1に示す。
"Example 2"
Except for providing the protrusions on the temperature adjusting base member, an electrostatic chuck device of Example 2 was produced in the same manner as in Example 1. The results are shown in Table 1.

「比較例1」
実施例1において、静電チャック部載置板に凸部を設けず、幅2mm、長さ2mm、高さ100μmのポリイミド製のスペーサを用いた。なお、スペーサの添加量は接合面の全面積100%に対して、0.48%(直径298mmの載置板の場合85個のポリイミドスペーサを用いた)になるように調整した以外は、実施例1と同様にして比較例1の静電チャック装置を作製した。なお、ポリイミドスペーサの表面粗さは0.03~0.07μmであった。結果を表1に示す。
"Comparative Example 1"
In Example 1, no protrusions were provided on the electrostatic chuck mounting plate, and polyimide spacers with a width of 2 mm, length of 2 mm, and height of 100 μm were used. The electrostatic chuck device of Comparative Example 1 was produced in the same manner as in Example 1, except that the amount of spacers added was adjusted to 0.48% (85 polyimide spacers were used in the case of a mounting plate with a diameter of 298 mm) relative to 100% of the total area of the bonding surface. The surface roughness of the polyimide spacers was 0.03 to 0.07 μm. The results are shown in Table 1.

「実装試験」
静電チャック装置をプラズマ処理装置に設置し、3000時間実装試験を行った。実装試験開始直後と終了直前の、載置面の温度を、サーモグラフィーTVS-200EX(日本アビオニクス社製)を測定した。結果を表1に示す。
"Implementation Test"
The electrostatic chuck device was installed in a plasma processing device, and a 3000-hour mounting test was performed. The temperature of the mounting surface was measured using a thermograph TVS-200EX (manufactured by Nippon Avionics Co., Ltd.) immediately after the start of the mounting test and immediately before the end of the test. The results are shown in Table 1.

Figure 0007673382000001
Figure 0007673382000001

以上の結果によると、実施例1、2は、実装試験前後でも、載置面の表面温度のばらつきの差が、比較例1と比較して小さくほとんど変化していない。
これは、スペーサを用いた場合、長時間の実装試験において、スペーサと静電チャックの載置面の裏面または、温度調整用ベース部材の界面に存在している接着剤層が、熱履歴によって膨張、収縮を繰り返すことで徐々に剥離し、部分的に熱伝導係数が変化ために発生したと考えられる。
以上から、本発明は有用である。
According to the above results, in Examples 1 and 2, the difference in the variation in the surface temperature of the mounting surface before and after the mounting test is small compared to Comparative Example 1, and there is almost no change.
This is believed to have occurred because, when a spacer was used, during a long-term mounting test, the adhesive layer present on the back surface of the spacer and the mounting surface of the electrostatic chuck or at the interface with the temperature adjustment base member gradually peeled off due to repeated expansion and contraction due to thermal history, resulting in a partial change in the thermal conductivity coefficient.
For the above reasons, the present invention is useful.

1 静電チャック装置
2 静電チャック部材
3 温度調節用ベース部材
4 接着剤層
11 載置板
12 支持板
13 静電吸着用電極
14 絶縁材
15 貫通孔
16 給電端子
17 固定孔
18 電極ピン
19 突起
21 流路
22 高周波電源
23 絶縁材料
24 直流電源
REFERENCE SIGNS LIST 1 Electrostatic chuck device 2 Electrostatic chuck member 3 Temperature adjustment base member 4 Adhesive layer 11 Placement plate 12 Support plate 13 Electrostatic attraction electrode 14 Insulating material 15 Through hole 16 Power supply terminal 17 Fixing hole 18 Electrode pin 19 Protrusion 21 Flow path 22 High frequency power source 23 Insulating material 24 DC power source

Claims (5)

セラミックスからなる静電チャック部材と、金属からなる温度調整用ベース部材と、接着剤層と、を備える静電チャック装置であって、
前記静電チャック部材と前記温度調整用ベース部材とが接合する接合面において、前記静電チャック部材と前記温度調整用ベース部材のいずれか一方に粗面を有し、
前記接着剤層を介して、前記静電チャック部材と前記温度調整用ベース部材が接合されており、
前記粗面は、複数の突起で構成され、
前記複数の突起は、高さが同一であり、且つ前記静電チャック部材と前記温度調整用ベース部材のいずれか他方に接し、
前記接合面において前記複数の突起が占める割合は、前記接合面の全面積100%に対して0.01%以上1.0%以下である静電チャック装置。
An electrostatic chuck device comprising: an electrostatic chuck member made of ceramics; a temperature adjustment base member made of metal; and an adhesive layer,
a joint surface between the electrostatic chuck member and the temperature adjustment base member, the joint surface being roughened on either the electrostatic chuck member or the temperature adjustment base member;
the electrostatic chuck member and the temperature adjustment base member are joined via the adhesive layer,
The rough surface is composed of a plurality of protrusions,
the plurality of protrusions have the same height and are in contact with either the electrostatic chuck member or the temperature adjustment base member,
an area ratio of the plurality of protrusions to the joining surface is 0.01% or more and 1.0 % or less with respect to 100% of a total area of the joining surface;
前記突起を前記接合面側から見た場合の前記突起の外径は、0.05mm以上3.0mm以下である、請求項1に記載の静電チャック装置。 The electrostatic chuck device according to claim 1, wherein the outer diameter of the protrusion when viewed from the joining surface side is 0.05 mm or more and 3.0 mm or less. 前記突起の高さを、25μm以上400μm以下とする、請求項2に記載の静電チャック装置。 The electrostatic chuck device according to claim 2, wherein the height of the protrusions is 25 μm or more and 400 μm or less. 前記粗面において、前記接合面の算術平均粗さ(Ra)を0.01μm以上2.0μm以下とする、請求項1~3のいずれか1項に記載の静電チャック装置。 The electrostatic chuck device according to any one of claims 1 to 3, wherein the rough surface has an arithmetic mean roughness (Ra) of the joining surface of 0.01 μm or more and 2.0 μm or less. セラミックスからなる静電チャック部材と、金属からなる温度調整用ベース部材とを、接着剤層を介して接合してなる静電チャック装置の製造方法であって、
前記静電チャック部材と前記温度調整用ベース部材とが接合する接合面において、前記静電チャック部材と前記温度調整用ベース部材のいずれか一方に複数の突起を形成する粗面加工を施す工程と、
前記粗面加工を施した前記接合面を、接着剤を介して、前記静電チャック部材と前記温度調整用ベース部材と接合する工程と、を有し、
前記粗面加工を施す工程において、前記複数の突起の高さを同一、且つ前記接合面における前記複数の突起が占める割合を、前記接合面の全面積100%に対して0.01%以上1.0%以下とし、
前記接合する工程において、前記複数の突起を、前記静電チャック部材と前記温度調整用ベース部材のいずれか他方に接触させて接合する静電チャック装置の製造方法。
A method for manufacturing an electrostatic chuck device in which an electrostatic chuck member made of ceramics and a temperature adjustment base member made of metal are bonded together via an adhesive layer, the method comprising the steps of:
a step of performing a surface roughening process to form a plurality of protrusions on one of the electrostatic chuck member and the temperature adjustment base member at a joining surface between the electrostatic chuck member and the temperature adjustment base member;
and bonding the roughened bonding surface to the electrostatic chuck member and the temperature adjustment base member via an adhesive.
In the step of roughening the surface, the height of the plurality of protrusions is made uniform, and the ratio of the area of the bonding surface occupied by the plurality of protrusions is set to 0.01% or more and 1.0 % or less with respect to 100% of the total area of the bonding surface;
In the joining step, the plurality of protrusions are brought into contact with the other of the electrostatic chuck member and the temperature adjustment base member to join them.
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