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JPS5812695B2 - Manufacturing method of thermionic emission cathode - Google Patents
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JPS5812695B2 - Manufacturing method of thermionic emission cathode - Google Patents

Manufacturing method of thermionic emission cathode

Info

Publication number
JPS5812695B2
JPS5812695B2 JP52116877A JP11687777A JPS5812695B2 JP S5812695 B2 JPS5812695 B2 JP S5812695B2 JP 52116877 A JP52116877 A JP 52116877A JP 11687777 A JP11687777 A JP 11687777A JP S5812695 B2 JPS5812695 B2 JP S5812695B2
Authority
JP
Japan
Prior art keywords
lab6
cathode
chip
single crystal
thermionic emission
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP52116877A
Other languages
Japanese (ja)
Other versions
JPS5451473A (en
Inventor
寺崎隆一
平岡秀雄
和田徹也
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denka Co Ltd
Original Assignee
Denki Kagaku Kogyo KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Denki Kagaku Kogyo KK filed Critical Denki Kagaku Kogyo KK
Priority to JP52116877A priority Critical patent/JPS5812695B2/en
Publication of JPS5451473A publication Critical patent/JPS5451473A/en
Publication of JPS5812695B2 publication Critical patent/JPS5812695B2/en
Expired legal-status Critical Current

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  • Solid Thermionic Cathode (AREA)

Description

【発明の詳細な説明】 本発明は六ホウ化ランタン(LaB6)の単結晶と多結
晶とからなる二層構造から構成されたチップを使用した
高性能で、かつ経済性にすぐれた熱電子放射陰極の製造
法に関する。
DETAILED DESCRIPTION OF THE INVENTION The present invention provides high-performance and economical thermionic emission using a chip composed of a two-layer structure consisting of a single crystal and a polycrystal of lanthanum hexaboride (LaB6). Concerning a method for producing a cathode.

LaB6を初めとする希土類元素の六ホウ化物は、仕事
関数が小さいので、従来のタングステンおよび酸化物系
の熱電子放射陰極用棒状部材またはチップ(以下、これ
らを単に陰極用チップという)に代る材料として注目さ
れている。
Hexaborides of rare earth elements such as LaB6 have a small work function, so they can be used in place of conventional tungsten and oxide-based thermionic emission cathode rod members or tips (hereinafter referred to simply as cathode tips). It is attracting attention as a material.

しかし、この材料は熱電子を放射する高温において、ほ
とんどの材料と反応するために加熱して支持することは
非常に困難であるため熱電子放射陰極として使用できな
いという欠点がある。
However, this material has the disadvantage that it cannot be used as a thermionic emitting cathode because it is very difficult to heat and support it because it reacts with most materials at high temperatures at which it emits thermionic electrons.

これの改良法として、LaB6からなる陰極用チップの
周囲をタングステンのコイルを置き間接的に加熱したり
(特公昭45−40576)、LaB6からなる陰極用
チップをLaB6と反応しない熱分解黒鉛を用いて支持
加熱したりする方法(特公昭47−25911)等が提
案されているが、いずれも実用性に問題がある。
As an improvement method for this, a tungsten coil is placed around the cathode tip made of LaB6 to indirectly heat it (Japanese Patent Publication No. 45-40576), and the cathode tip made of LaB6 is replaced with pyrolytic graphite that does not react with LaB6. Methods have been proposed in which support and heating are carried out (Japanese Patent Publication No. 47-25911), but all of them have problems in practicality.

一方、LaB6からなる陰極用チップは、多結晶のもの
と単結晶のものとがある。
On the other hand, cathode chips made of LaB6 are available in polycrystalline and single-crystalline types.

熱圧成型による多結晶焼結体を所定の大きさに切断し加
工して得られた多結晶のものは、その電子ビーム特性が
タングステン熱陰極よりもすぐれているが、十分でない
A polycrystalline material obtained by cutting and processing a polycrystalline sintered body by thermo-pressure molding into a predetermined size has better electron beam characteristics than a tungsten hot cathode, but it is not sufficient.

すなわち、タングステン陰極の最大輝度は1×104A
/cm2strに比較してLaB6焼結体陰極の輝度は
2×105A/cm2strである。
That is, the maximum brightness of the tungsten cathode is 1×104A.
/cm2str, the luminance of the LaB6 sintered cathode is 2×105A/cm2str.

これに対し、単結晶のものは、多結晶のものに比べて、
高輝度、高い電流安定性、雰囲気安定性、長寿命性等の
性能の点ですぐれているが高価であるという欠点がある
On the other hand, single-crystal ones, compared to polycrystal ones,
Although it has excellent performance such as high brightness, high current stability, atmospheric stability, and long life, it has the disadvantage of being expensive.

すなわち、LaB6の単結晶の製法は例えば特開昭51
−i18362に示されるように、フローテイング・ゾ
ーン法(FZ法)を用いゆっくりと成長させる。
In other words, the method for manufacturing a single crystal of LaB6 is disclosed in, for example, JP-A-51
-Grow slowly using the floating zone method (FZ method) as shown in i18362.

しかしこのFZ装置は高価であり、かつ成長に時間がか
かるため、製造した単結晶LaB6高価となる。
However, this FZ device is expensive and takes time to grow, so the manufactured single crystal LaB6 becomes expensive.

従ってLaB6の単結晶の使用を少なくすることが望ま
れている。
Therefore, it is desired to reduce the use of single crystals of LaB6.

本発明は、単結晶LaB6の優れた熱電子放射特性を失
うことなく安価で実用的な熱電子放射陰極を提供するこ
とを目的とするものである。
An object of the present invention is to provide an inexpensive and practical thermionic emission cathode without losing the excellent thermionic emission characteristics of single crystal LaB6.

すなわち、本発明は厚さ2mm以下の単結晶LaB6円
盤をホットプレス装置に入れ、次いでその上に多結晶L
aB6の粉末を載置し、ホットプレス成形して二層構造
の棒状成形物とし、これをチップ状に切り出し、その単
結晶部分の先端を加工し、熱電子放射陰極用チップとし
、このチップを常法によって陰極に組立てることを特徴
とする。
That is, in the present invention, a single-crystal LaB6 disk with a thickness of 2 mm or less is placed in a hot press device, and then polycrystalline L is placed on top of it.
AB6 powder is placed and hot press molded to form a rod-shaped product with a two-layer structure.This is cut into a chip shape, and the tip of the single crystal part is processed to make a thermionic emission cathode chip. It is characterized by being assembled into a cathode by a conventional method.

以下さらに本発明について詳しく説明する。The present invention will be further explained in detail below.

まず本発明に用いるLaB6の単結晶と多結晶とからな
る二層構造の棒状成形物は、例えば多結晶La B6を
フローテイングゾーン法により単結晶棒状体としたもの
をその厚さ2mm以下に切断して円盤とし、これをホッ
トプレス成形装置に入れ、その上に多結晶LaB6粉末
を置いて、ホットプレス成形して二層構造の一体成形物
としたものである。
First, the rod-shaped molded product with a two-layer structure consisting of a single crystal and polycrystalline LaB6 used in the present invention is obtained by cutting polycrystalline LaB6 into a single-crystal rod-shaped body by the floating zone method to a thickness of 2 mm or less. This was put into a hot press molding machine, polycrystalline LaB6 powder was placed on top of the disc, and hot press molding was performed to obtain a two-layered integrally molded product.

このようにして得られた成形物の単結晶部分の先端を加
工してチップとし、次いでこれを組立てて熱電子放射陰
極とするものである。
The tip of the single crystal portion of the molded product thus obtained is processed into a chip, which is then assembled to form a thermionic emission cathode.

一般に、単結晶セラミックに多結晶物質を接合又はコー
ティングする方法は、CVD、真空蒸着、スパッタリン
グ、イオンプレーテイングなどがあるが、LaB6は融
点が高いために緻密な接合体を得にくい、接合層の成長
速度が小さい、接合層が厚くなると接合強度を大きく保
つのが困難であるなどの欠点を有している。
Generally, methods for bonding or coating polycrystalline materials on single-crystal ceramics include CVD, vacuum evaporation, sputtering, and ion plating, but LaB6 has a high melting point, making it difficult to obtain a dense bonded body. It has drawbacks such as slow growth rate and difficulty in maintaining high bonding strength when the bonding layer becomes thick.

それに対してホットプレス法によると、任意の厚さの多
結晶体を単結晶体に接合することが可能であり、接合体
が円盤状で得られるため、後のチップにする工程が単純
化されるという利点がある。
On the other hand, with the hot press method, it is possible to bond a polycrystalline body of any thickness to a single crystalline body, and the bonded body is obtained in the form of a disk, which simplifies the subsequent process of making chips. It has the advantage of being

以下、図面に従って本発明を詳しく説明する。Hereinafter, the present invention will be explained in detail with reference to the drawings.

図面は本発明の実施例を示すもので第1図は本発明の間
接加熱接合型熱電子5放射陰極を示す斜視図である。
The drawings show embodiments of the present invention, and FIG. 1 is a perspective view showing an indirect heating junction type thermionic 5-emitting cathode of the present invention.

そのチップ先端部1は単結晶LaB6、下部2は多結晶
LaB6であり、両者は接合されていることを表わす。
The tip end 1 of the chip is made of single crystal LaB6, and the lower part 2 is made of polycrystalline LaB6, indicating that the two are joined.

また、3は銅製支持ホールダーであってチップ先端部1
より加熱されるようになっている。
3 is a support holder made of copper, and the tip end portion 1
It's getting more heated.

第2図は本発明の直接加熱把持型熱電子放射陰極の側面
図である。
FIG. 2 is a side view of the directly heated gripping type thermionic emission cathode of the present invention.

単結晶LaB6からなる先端部1と多結晶LaB6から
なる下部2とが一体化された陰極用チップは、5の電極
から電流が導入され、4の黒鉛よりなるヒーターで加熱
される。
A cathode chip in which a tip portion 1 made of single-crystal LaB6 and a lower portion 2 made of polycrystalline LaB6 are integrated is heated by a heater made of graphite 4 with a current introduced from an electrode 5.

本発明に係るチップの寸法は、通常、第1図の陰極の場
合は、直径1mm、長さ15mm程度であり、また、第
2図の場合は、1辺が0.5mmで長さ2mm程度の小
さなものが使用される。
The dimensions of the chip according to the present invention are usually about 1 mm in diameter and 15 mm in length in the case of the cathode shown in FIG. 1, and about 2 mm in length with each side of 0.5 mm in the case of FIG. 2. A small one is used.

いずれのチップにおいても、熱電子を放出する役割をも
つ部分は、先端を尖らせた極く一部にしかすぎず、その
他の部分は熱電子放出には何ら関係しないので、例えば
0.5mm程度の先端以外の部分は高価な単結晶LaB
6にする必要はまったくない。
In any chip, the part that has the role of emitting thermionic electrons is only a very small part of the pointed tip, and the other part has no relation to thermionic emission, so it has a diameter of about 0.5 mm, for example. The part other than the tip is made of expensive single crystal LaB.
There is no need to set it to 6.

また、本発明においてチップの先端部と下部とを、結晶
の種類は異なるが同種のLaB6材料で構成した理由は
、化学的に不活性な材料でなければならないこと、及び
繰返し使用した場合、熱膨張率の差異にもとづく接合部
からの割れや剥離を防止するためであって、これを熱膨
張率のちがう異種の材料で構成したのでは、高温と室温
の繰返し使用によって接合部から剥離しやすくなり、耐
久性の犬なるチップとすることができなくなるからであ
る。
In addition, in the present invention, the tip and lower part of the chip are made of the same type of LaB6 material, although the type of crystal is different, because the material must be chemically inert and when used repeatedly, This is to prevent cracking and peeling from the joint due to differences in expansion coefficients.If this is made of different materials with different coefficients of thermal expansion, it will easily peel off from the joint due to repeated use at high temperature and room temperature. This is because it becomes impossible to make a durable chip.

先端部と下部とを一体化するには、実施例に示すように
、ホットプレス法によるのが好ましい。
In order to integrate the tip and the lower part, it is preferable to use a hot press method as shown in the examples.

以上のように、本発明は、熱電子放出の役割をもつ先端
だけを単結晶LaB6とし、熱電子放出の役割をもたな
い部分は多結晶LaB6として一体化した陰極用チップ
を用いた熱陰極の製造法であり、チップを構成するLa
B6の単結晶と多結晶とが剥離することがない高性能の
熱陰極を安価に提供できるという効果がある。
As described above, the present invention provides a hot cathode using a cathode chip in which only the tip that plays the role of thermionic emission is made of single crystal LaB6, and the part that does not have the role of thermionic emission is made of polycrystalline LaB6. This is the manufacturing method for La that makes up the chip.
This has the effect of providing a high-performance hot cathode at a low cost in which the B6 single crystal and polycrystal do not separate.

以下、実施例をあげてさらに詳しく説明する。Hereinafter, the present invention will be explained in more detail with reference to examples.

実施例 LaB6粉末をラバープレスにより、直径20mm長さ
200mmの棒状成形物を作成し、さらにその棒状成形
物を不活性雰囲気中で加熱し、LaB6焼結棒を得た。
Example A rod-shaped molded product having a diameter of 20 mm and a length of 200 mm was prepared from LaB6 powder using a rubber press, and the rod-shaped molded product was further heated in an inert atmosphere to obtain a sintered LaB6 rod.

これを、直径15mm、長さ180mmの大きさに機械
加工した後、FZ装置内に置き、アルゴンガス30気圧
下において、高周波加熱により焼結棒の一部を部分的に
加熱し、融帯を上下に数回移動して高純度のLaB6単
結晶棒を得た。
After machining this into a size of 15 mm in diameter and 180 mm in length, it was placed in an FZ device, and a part of the sintered rod was partially heated by high frequency heating under 30 atmospheres of argon gas to create a melt zone. A high purity LaB6 single crystal rod was obtained by moving up and down several times.

この単結晶LaB6棒から、直径10mm、厚さ2mm
の円板を機械的加工によって作成した。
From this single crystal LaB6 rod, the diameter is 10 mm and the thickness is 2 mm.
A disk was created by mechanical processing.

この円板を内径10mm、外径70mm、長さ100m
mの黒鉛ダイス内に置き、その上に多結晶LaB6粉末
を成形後の焼結体の厚さが18mmになるように充填し
、2050℃、350kg/cm2の条件で60分ホッ
トプレス焼結して接合した。
This disc has an inner diameter of 10 mm, an outer diameter of 70 mm, and a length of 100 m.
The sintered body was placed in a graphite die of 1.5 m in diameter, filled with polycrystalline LaB6 powder so that the thickness of the sintered body after molding was 18 mm, and hot press sintered at 2050°C and 350 kg/cm2 for 60 minutes. It was joined.

ホットプレス後、取り出した成形物は、一端が2mmだ
け単結晶LaB6をもッタ直径10mm、長さ20mm
のLaB6棒である。
After hot pressing, the molded product taken out had single crystal LaB6 on one end for 2 mm, had a diameter of 10 mm, and a length of 20 mm.
This is a LaB6 bar.

このホットプレス操作によって単結晶体LaB6が多結
晶体に移行することはない。
This hot pressing operation does not convert the single crystal LaB6 into a polycrystal.

それは単結晶の方がエネルギー的に安定であるからであ
る。
This is because single crystals are more energetically stable.

この単結晶と多結晶の接合した棒より、熱電子が放射す
る先端部が単結晶になるように機械的加工して本発明の
熱陰極用チップとした。
The hot cathode chip of the present invention was obtained by mechanically processing the rod in which the single crystal and polycrystal were joined so that the tip from which thermionic electrons were radiated became a single crystal.

これを第2図に示すような熱陰極を組立て、1550℃
において熱電子放射試験を行なった。
A hot cathode was assembled as shown in Figure 2, and the temperature was raised to 1550°C.
Thermionic emission tests were conducted at

その結果、500時間使用しても接合部からの剥離や割
れはなかった。
As a result, there was no peeling or cracking from the joints even after 500 hours of use.

なお、多結晶LaB6のみで構成したチップの場合は、
約300時間で使用不可能となった。
In addition, in the case of a chip composed only of polycrystalline LaB6,
It became unusable after about 300 hours.

また、輝度の測定値は、7×105A/cm2であり、
これは、単結晶LaB6のみからなるチップを用いた場
合の値とほぼ同じであった。
In addition, the measured value of brightness is 7 × 105 A/cm2,
This value was almost the same as the value when using a chip made only of single-crystal LaB6.

さらに、電子ビームの安定性は、1時間あたり1%以下
であり、非常に良好であった。
Furthermore, the stability of the electron beam was 1% or less per hour, which was very good.

比較例 多結晶LaB6粉末の代りにホウ化ジルコニウム(Zr
B2)又はホウ化チタニウム(TiB2)を用いた以外
は実施例1と同様にしてチップを製造しこれを用いて熱
陰極とした。
Comparative Example Zirconium boride (Zr) was used instead of polycrystalline LaB6 powder.
A chip was manufactured in the same manner as in Example 1 except that B2) or titanium boride (TiB2) was used, and this chip was used as a hot cathode.

しかし、これらは何れもひびわれを生じたり、チップ間
のバラツキが大きく熱陰極として使用するとチップの脱
落をしたりするので商品として使用できなかった。
However, all of these could not be used as commercial products because they cracked and had large variations between chips, causing chips to fall off when used as hot cathodes.

【図面の簡単な説明】[Brief explanation of the drawing]

図面は、本発明の実施例を示すもので、第1図は間接加
熱接合型LaB6熱陰極の斜視図、第2図は直接加熱把
持型LaB6熱陰極の側面図である。 1・・・・・・単結晶LaB6、2・・・・・・多結晶
LaB6、3・・・・・・銅製支持ホルダー、4・・・
・・・熱分解黒鉛ヒーター、5・・・・・・電極。
The drawings show an embodiment of the present invention, and FIG. 1 is a perspective view of an indirectly heated bonding type LaB6 hot cathode, and FIG. 2 is a side view of a directly heated and gripped type LaB6 hot cathode. 1... Single crystal LaB6, 2... Polycrystalline LaB6, 3... Copper support holder, 4...
...Pyrolytic graphite heater, 5... Electrode.

Claims (1)

【特許請求の範囲】[Claims] 1 厚さ2mm以下の単結晶LaB6円盤をホットプレ
ス装置に入れ、次いでその上に多結晶LaB6の粉末を
載置しホットプレス成型して、二層構造の一体成形物と
し、これをチップ状に切り出し、その単結晶部分の先端
を加工して熱電子放射陰極用チップとし、このチップを
常法によって陰極に組立てることを特徴とする熱電子放
射陰極の製造法。
1. A single-crystalline LaB6 disk with a thickness of 2 mm or less is placed in a hot press machine, and then polycrystalline LaB6 powder is placed on top of it and hot-press molded to form a two-layered integrally molded product, which is then shaped into a chip. 1. A method for manufacturing a thermionic emission cathode, which comprises cutting out the single crystal, processing the tip of the single crystal part to make a thermionic emission cathode chip, and assembling this chip into a cathode by a conventional method.
JP52116877A 1977-09-30 1977-09-30 Manufacturing method of thermionic emission cathode Expired JPS5812695B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP52116877A JPS5812695B2 (en) 1977-09-30 1977-09-30 Manufacturing method of thermionic emission cathode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP52116877A JPS5812695B2 (en) 1977-09-30 1977-09-30 Manufacturing method of thermionic emission cathode

Publications (2)

Publication Number Publication Date
JPS5451473A JPS5451473A (en) 1979-04-23
JPS5812695B2 true JPS5812695B2 (en) 1983-03-09

Family

ID=14697837

Family Applications (1)

Application Number Title Priority Date Filing Date
JP52116877A Expired JPS5812695B2 (en) 1977-09-30 1977-09-30 Manufacturing method of thermionic emission cathode

Country Status (1)

Country Link
JP (1) JPS5812695B2 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5796437A (en) * 1980-12-09 1982-06-15 Denki Kagaku Kogyo Kk Thermion emission cathode
US4486684A (en) * 1981-05-26 1984-12-04 International Business Machines Corporation Single crystal lanthanum hexaboride electron beam emitter having high brightness
US4468586A (en) * 1981-05-26 1984-08-28 International Business Machines Corporation Shaped electron emission from single crystal lanthanum hexaboride with intensity distribution
US5608283A (en) * 1994-06-29 1997-03-04 Candescent Technologies Corporation Electron-emitting devices utilizing electron-emissive particles which typically contain carbon
CN111825463A (en) * 2020-06-29 2020-10-27 井冈山大学 A kind of LaB6-CrB2 composite cathode material and preparation method thereof
JP7640560B2 (en) * 2020-08-17 2025-03-05 デンカ株式会社 Emitter and device including same

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5231650A (en) * 1975-09-04 1977-03-10 Natl Inst For Res In Inorg Mater Thermion radiation cathode
JPS5231651A (en) * 1975-09-04 1977-03-10 Natl Inst For Res In Inorg Mater Scan-type electron microscope
JPS5267563A (en) * 1975-12-02 1977-06-04 Denki Kagaku Kogyo Kk Method of fabricating thermally

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Publication number Publication date
JPS5451473A (en) 1979-04-23

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