JPS5812730B2 - wafer jig - Google Patents
wafer jigInfo
- Publication number
- JPS5812730B2 JPS5812730B2 JP8756173A JP8756173A JPS5812730B2 JP S5812730 B2 JPS5812730 B2 JP S5812730B2 JP 8756173 A JP8756173 A JP 8756173A JP 8756173 A JP8756173 A JP 8756173A JP S5812730 B2 JPS5812730 B2 JP S5812730B2
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- groove
- jig
- grooves
- quartz glass
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Description
【発明の詳細な説明】
本発明はウエーハ治具に関し、とくに半導体ウエーハの
拡散時に用いるウエーハ治具に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a wafer jig, and more particularly to a wafer jig used during diffusion of semiconductor wafers.
周知のように半導体工業においては、たとえばシ}コン
ウエーハの表面にボロンBなどの不純物蒸気を流した状
態で加熱炉を通し1200℃程度の温度で加熱すること
によりウエーノの表面に不純物を拡散させている。As is well known, in the semiconductor industry, impurities are diffused onto the surface of a silicon wafer by passing impurity vapor such as boron B through a heating furnace and heating it at a temperature of about 1200 degrees Celsius. There is.
このような、ウエーハの拡散時には、多数のシリコンウ
エーハを並列状態に立てられる複数の溝が形成されたウ
エーハ治具を用いている。During such wafer diffusion, a wafer jig is used which has a plurality of grooves formed therein to allow a large number of silicon wafers to stand in parallel.
従来のウエーハ治具は、そのウエーハを立てる溝の形状
が第1図に示すように、ウエーハ1の厚さに見合った幅
を有する断面「コ」字状に形成されているため、この溝
2に落し込まれたウエーハ1は、前記溝2の内面2aと
面接触した状態で支持される。In the conventional wafer jig, the shape of the groove on which the wafer is placed is formed into a U-shaped cross section with a width commensurate with the thickness of the wafer 1, as shown in FIG. The wafer 1 dropped into the groove 2 is supported while being in surface contact with the inner surface 2a of the groove 2.
このため、前記溝2を有する従来のウエーハ治具を用い
てウエーハの拡散を行った場合、不純物の蒸気3が治具
と接したウエーハ1の周辺に行き渡らずウエーハ10表
面に施された拡散にむらを生じ所望の拡敷ウエーハを得
ることができなかった。Therefore, when the wafer is diffused using the conventional wafer jig having the grooves 2, the impurity vapor 3 does not spread around the wafer 1 in contact with the jig, and the impurity vapor 3 does not spread to the wafer 10 surface. Unevenness occurred and the desired spread wafer could not be obtained.
したがって、前記拡散ウエー1の歩留が低下し、さらに
はウエーハの電気的特性の劣化をひきおこしている。Therefore, the yield of the diffusion wafer 1 is reduced, and furthermore, the electrical characteristics of the wafer are deteriorated.
また、従来のウエーハ治具にあっては、ウエーハと溝と
の接触部分が大なるために、たとえば、治具側に汚れが
付いていた場合には、その汚れがウエーハ側に付着して
、ウエーハの表面を汚すなどの不都合を生じている。In addition, in conventional wafer jigs, the contact area between the wafer and the groove is large, so if there is dirt on the jig side, for example, that dirt will adhere to the wafer side. This causes inconveniences such as contaminating the surface of the wafer.
本発明は以上のような従来の不都合を解消するものであ
って、その目的とするところは、ウエーハの表面の全域
にわたってむらなく拡散が行える構造を有するウエーハ
治具を提供するにある。The present invention is intended to solve the above-mentioned conventional disadvantages, and its purpose is to provide a wafer jig having a structure that allows diffusion to be performed evenly over the entire surface of the wafer.
また他の目的は、治具側の汚れがウエーハに移着するこ
とのない構造のウエーハ治具を提供するにある。Another object of the present invention is to provide a wafer jig having a structure in which dirt on the jig side is not transferred to the wafer.
このような目的を達成するための本発明の基本的な構成
は、ウエーハを支持する治具側の溝の内面と前記ウエー
ハの陵線とが接触するようにしたものであって、以下図
面に示す実施例により本発明を詳細に説明する。The basic structure of the present invention to achieve such an object is that the inner surface of the groove on the side of the jig that supports the wafer is in contact with the ridge line of the wafer, as shown in the drawings below. The present invention will be explained in detail by means of examples shown.
第2図は本発明によるウエーハ治具の全体を示す斜視図
である。FIG. 2 is a perspective view showing the entire wafer jig according to the present invention.
同図において、本発明によるウエーハ治具10は3本の
石英ガラス棒11,12.13が山形に配置され、各石
英ガラス棒11,12.13間には連結部材14が介在
されていて、この連結部材14により石英ガラス棒11
,12.13は一体化されている。In the figure, a wafer jig 10 according to the present invention has three quartz glass rods 11, 12.13 arranged in a chevron shape, and a connecting member 14 is interposed between each quartz glass rod 11, 12.13. By this connecting member 14, the quartz glass rod 11
, 12.13 are integrated.
また、前記石英ガラス棒11,13は石英ガラス棒12
を境にして対称に位置されており、前記石英ガラス棒1
2は前記石英ガラス棒11,13よりも一段低く位置さ
れている。Further, the quartz glass rods 11 and 13 are the quartz glass rod 12.
The quartz glass rod 1
2 is located one step lower than the quartz glass rods 11 and 13.
そして、3本の前記石英ガラス棒11,12.13の組
合せにより形成された凹部14側には、各石英ガラス棒
11,12.13延長方向に向けて、その径方向に複数
の溝11a,12a,13aが設けられており、前記溝
11a,12a,13aは各石英ガラス棒11,12,
13のそれぞれ対応した位置に設けられている。On the side of the recess 14 formed by the combination of the three quartz glass rods 11, 12.13, a plurality of grooves 11a are formed in the radial direction toward the extension direction of each quartz glass rod 11, 12.13. 12a, 13a are provided, and the grooves 11a, 12a, 13a are provided with respective quartz glass rods 11, 12,
13, respectively, are provided at corresponding positions.
さらに、前記溝11a,12a,13aの形状は、第3
図に示すように断面「V字型」に形成されており、その
開脚角度は例えば60度で溝11a,12a,13aの
深さは石英ガラス棒11,12.13のそれぞれの外縁
11b,12bν13bより211@度内部に入った深
さを有する。Furthermore, the shape of the grooves 11a, 12a, 13a is
As shown in the figure, it is formed into a "V-shaped" cross section, and its opening angle is, for example, 60 degrees, and the depths of the grooves 11a, 12a, 13a are the outer edges 11b of the quartz glass rods 11, 12, 13, respectively. It has a depth that is 211 degrees deeper than 12bν13b.
また、前記溝11a,12a,13aの開放側の幅はウ
エーハ15の厚さの3倍程度の幅を有し、かつ、各溝1
1a,12a,13aの隣合う溝間の距離はウエーハ1
5の厚さの4倍にあたる距離を有する。Further, the width of the open side of the grooves 11a, 12a, and 13a is about three times the thickness of the wafer 15, and each groove 1
The distance between adjacent grooves 1a, 12a, and 13a is wafer 1.
The distance is four times the thickness of 5.
なお、前記実施例においては溝11a,12a13&の
形状な−V字型」に形成したものを例示したが前記溝1
1at12ap13aの形状は第4図に示すように「U
字型」の形状を有する溝16であってもよく、また、第
5図に示すように「台型」の形状に溝17を形成しても
よいことは言うまでもない。In the above embodiment, the grooves 11a, 12a, 13& are formed in a -V shape, but the grooves 1
The shape of 1at12ap13a is “U” as shown in FIG.
It goes without saying that the groove 16 may have a ``letter'' shape, or the groove 17 may have a ``trapezoid'' shape as shown in FIG.
この場合にあっても、前記第4図、第5図に示す溝の溝
幅はウエーハ15の厚さよりも充分に広くなるように形
成してあって、前記ウエーハ15の陵角と溝の斜面とが
点または線接触するように形成されている。Even in this case, the width of the groove shown in FIGS. 4 and 5 is formed to be sufficiently wider than the thickness of the wafer 15, and the ridge angle of the wafer 15 and the slope of the groove are and are in point or line contact.
以上のように本発明によれば、ウエーハ15を落し込み
かつ支持するための溝11a,12a,13aの形状を
ウエーハ15の陵角と点接触または線接触になるように
形成することによりウエーハ15の表面が溝面で覆われ
ることのないようにしているからたとえばウエーハ15
の拡散を行う場合には、溝11a,12a,13aの面
とウエーハ15との間に形成される空隙を通してボロン
Bなどの不純物蒸気がウエーハ15の表面に充分に行き
渡る。As described above, according to the present invention, the shapes of the grooves 11a, 12a, and 13a for dropping and supporting the wafer 15 are formed so as to be in point or line contact with the ridges of the wafer 15. For example, since the surface of wafer 15 is not covered with the groove surface,
When performing diffusion, impurity vapor such as boron B sufficiently spreads over the surface of the wafer 15 through the gaps formed between the surfaces of the grooves 11a, 12a, 13a and the wafer 15.
したがって、ウエーハ15の表面に対する不純物拡散に
ばらつきを生ずることもなく精度の高い拡散(表面処理
)が可能となり、ウエーハ15の外観不良特性不良が皆
無となる。Therefore, highly accurate diffusion (surface treatment) is possible without causing variations in impurity diffusion to the surface of the wafer 15, and there is no appearance or characteristic defect of the wafer 15.
また、ウエーハ15と溝の面とは面接触していないから
、ウエーハ15を治具ごと加熱炉内に入れて加熱した場
合にあっても熱膨張係数の差によって、ウエーハ15が
溝にきつく挾み付けられウエーハ15を取り出す際にウ
エーハ15を破損させることもないほど数々の効果が得
られる。In addition, since the wafer 15 and the surface of the groove are not in surface contact with each other, even if the wafer 15 is placed in a heating furnace together with the jig and heated, the wafer 15 may not be tightly sandwiched in the groove due to the difference in thermal expansion coefficient. Many effects can be obtained such that the wafer 15 is not damaged when the wafer 15 is found.
第1図は従来のウエ二ハ治具の構造を示す説明図、第2
図は本発明によるウエーハ治具の全体を示す斜視図、第
3図は本発明によるウエーハ治具の要部拡大断面図、第
4図〜第5図は本発明によるウエーハ治具の溝の形状を
示す他の実施例図である。
1・・・・・・ウエーハ、2・・・・・・溝、2a・・
・・・・内面、3・・・・・・不純物の蒸気,10・・
・・・・ウェーハ治具、11・・・・・・ガラス棒、1
2・・・・・・ガラス棒、13・・・・・・ガラス棒、
11a・・・・・・溝、12a・・・・・・溝、13a
・・・・・・溝、1lb・・・・・・外縁、12b・・
・・・・外縁、13b・・・・・・外縁、14・・・・
・・凹部、15・・・・・・ウェーハ、16・・・・・
・「U字型」の形状を有する溝、17・・「台型」の形
状の溝。Figure 1 is an explanatory diagram showing the structure of a conventional wafer jig;
The figure is a perspective view showing the whole wafer jig according to the present invention, FIG. 3 is an enlarged sectional view of the main part of the wafer jig according to the present invention, and FIGS. 4 and 5 are the shapes of grooves of the wafer jig according to the present invention. It is another example figure which shows. 1...Wafer, 2...Groove, 2a...
...Inner surface, 3...Impurity vapor, 10...
...Wafer jig, 11...Glass rod, 1
2...Glass rod, 13...Glass rod,
11a...Groove, 12a...Groove, 13a
...Groove, 1lb...Outer edge, 12b...
... Outer edge, 13b... Outer edge, 14...
...Concavity, 15...Wafer, 16...
・Groove having a “U-shaped” shape, 17.・Groove having a “trapezoid” shape.
Claims (1)
治具において、前記溝は前記ウエーハの陵角に接触した
状態で前記ウエーハを支持する対向された斜面を有する
ウエーハ治具。1. A wafer jig having a groove for supporting a wafer in an upright position, wherein the groove has opposed slopes for supporting the wafer in contact with a ridge of the wafer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8756173A JPS5812730B2 (en) | 1973-08-06 | 1973-08-06 | wafer jig |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8756173A JPS5812730B2 (en) | 1973-08-06 | 1973-08-06 | wafer jig |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5037355A JPS5037355A (en) | 1975-04-08 |
| JPS5812730B2 true JPS5812730B2 (en) | 1983-03-10 |
Family
ID=13918389
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8756173A Expired JPS5812730B2 (en) | 1973-08-06 | 1973-08-06 | wafer jig |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5812730B2 (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5527976U (en) * | 1978-08-15 | 1980-02-22 | ||
| JPS5599719A (en) * | 1979-01-26 | 1980-07-30 | Hitachi Ltd | Heat treatment jig of wafer |
| JPS55110035A (en) * | 1979-02-16 | 1980-08-25 | Hitachi Ltd | Jig for heat treating wafer |
| US4256229A (en) * | 1979-09-17 | 1981-03-17 | Rockwell International Corporation | Boat for wafer processing |
| JPS58138918U (en) * | 1982-03-12 | 1983-09-19 | 中興化成工業株式会社 | Support device for cleaning lenses, etc. |
-
1973
- 1973-08-06 JP JP8756173A patent/JPS5812730B2/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5037355A (en) | 1975-04-08 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US2738564A (en) | Ceramic tile stackers | |
| US6709267B1 (en) | Substrate holder with deep annular groove to prevent edge heat loss | |
| KR102370949B1 (en) | Method for depositing an epitaxial layer on the front surface of a semiconductor wafer and apparatus for performing the method | |
| JPS5812730B2 (en) | wafer jig | |
| US4081293A (en) | Uniform thermomigration utilizing sample movement | |
| JP3469000B2 (en) | Vertical wafer support device | |
| US4170490A (en) | Process for thermal gradient zone melting utilizing a beveled wafer edge | |
| JPS61215289A (en) | Vapor-phase growth apparatus | |
| JPS61267317A (en) | Boat for vertical type diffusion furnace | |
| TWM464437U (en) | Wafer supporting device | |
| JP3868933B2 (en) | Atmospheric pressure CVD equipment | |
| US4168992A (en) | Process for thermal gradient zone melting utilizing a beveled wafer and a beveled guard ring | |
| JP2007084379A (en) | Method and apparatus for heat-treating sheet glass, and heat-treating tool | |
| JPH053244A (en) | Wafer jig | |
| JPH0648825Y2 (en) | Wafer carrier for growth equipment | |
| TWM594802U (en) | Hot process carrier plate | |
| JP3069350B1 (en) | Dummy wafer and heat treatment method using the dummy wafer | |
| JP3297267B2 (en) | Heat treatment wafer boat and heat treatment apparatus using the same | |
| JPH10321540A (en) | Annealing furnace processing boat | |
| JPS6013299B2 (en) | Heat treatment method for semiconductor devices | |
| JPH0219959Y2 (en) | ||
| JPH0519339Y2 (en) | ||
| JPS5940443Y2 (en) | Wafer support device | |
| JPS60112691A (en) | Substrate supporting device for molecular beam epitaxial growth device | |
| JPS6022314A (en) | Boat for semiconductor wafer |