JPS5814745B2 - hand tai souchi no seizou houhou - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method of manufacturing a semiconductor device, and particularly provides a method of simplifying the formation of interconnections between semiconductor pellets.

Conventionally, multiple semiconductor pellets were placed on the same substrate,
A method shown in FIG. 1 is used as one method for simultaneously forming interconnections between semiconductor pellets by vapor deposition.

In FIG. 1A, semiconductor pellets 2 and 3 are bonded and fixed at predetermined positions on an insulating substrate or a metal substrate 1. As shown in FIG.

4 and 5 are electrodes on the semiconductor pellets 2 and 3, respectively.

Next, thermoplastic resin 6, for example, FEP, is added to semiconductor pellets 2.
, 3 so that the thickness of the thermoplastic resin 6 on the semiconductor pellets 2, 3 is about 20 μm.

This state is indicated by B. Next, as shown in C, a part of the resin 6 on the electrodes 4 and 5 on the semiconductor pellet is removed by plasma etching to form a connection hole 7.

In this state, a metal evaporated film or a plating film is formed on the entire surface, and the interconnection 8 shown in D is formed by a normal photoetch process.
Form 9.10.

Here, 8 and 10 indicate conductive wiring from the semiconductor pellet electrodes to external lead terminals, and 9 indicates wiring between the semiconductor pellet electrodes.

First of all, in the conventional method of overlaying, when a plurality of semiconductor pellets are returned at the stage shown in FIG. 1A, it is extremely difficult to align them.

Second, it is currently extremely difficult to control the thickness of semiconductor pellets to within ±5μ.

In other words, if the thickness of each semiconductor pellet is uneven, when the resin is pressed against the resin, the distance from the resin surface to the electrode on the semiconductor pellet will vary, resulting in the formation of connection holes, poor contact during wiring formation, and disconnection of wiring. This causes problems such as

Thirdly, a layer of resin 6 is required on the semiconductor pellets 2 and 3, which requires a step of forming connection holes 7.

If there is no layer of resin 6 on the semiconductor pellet, the conductor wiring 8 shown in D would be connected to the silicon substrate of the semiconductor pellets 2 and 3.

Therefore, the present invention provides a method for manufacturing a vine, which solves the problem of alignment, which is a drawback of the conventional method, and which omits the connection hole forming step shown in FIG. 1C.

First, a method for manufacturing a semiconductor pellet used in an example of the present invention will be explained with reference to FIGS. 2A to 2C.

FIG. 2A shows a portion of a diffused silicon wafer.

Although transistors, resistors, diodes, etc. are not shown, a thermal oxide film 15 and Al electrodes 56 and 57 are provided on the silicon substrate 11.
and a protective insulating film 55.

25 is a window of the protective insulating film 55, and 26 is a portion where the thermal oxide film 15 provided in the cutting area is removed.

Next, as shown in FIG. 2B, a cut 17 is made from the back surface of the silicon substrate 11.

This can be easily formed using a rotating grindstone.

The depth of the cut is set to such an extent that the oxide film 15 and the protective insulating film 55 are not damaged.

Thereafter, the surface on which the Al electrodes 56 and 57 are formed is sufficiently protected with Apiezon wax (trade name) or the like, and etched from the back surface.

For example, if you use a HF:HN03-based liquid,
As shown in FIG. 1, protrusions 15a, 1 are provided in which the recess 18 can be easily formed and the oxide film, protective film, etc. on the surface are sufficiently protruded.
The wafer can be divided leaving 5b.

30.40 pellets are thus obtained.

Next, one embodiment of the present invention will be described with reference to FIG.

First, as shown in FIG. 3A, a transparent substrate 51 with a mark 52 provided on the first main surface and a temporary adhesive 53 coated on the second main surface is prepared. do.

Next, as shown in B, after temporarily fixing the electrodes 56 and 57 of the pellets 30 and 40 obtained in the process shown in FIG. A heat-resistant resin, a silicon oxide film, a silicon nitride film, or the like can be used as the C0 and B protective insulating film 55 that covers the pellet 30.40 and fixes the pellet 30.40.

Next, as shown in D, the transparent substrate 51 and adhesive 53 are removed, and interconnections 60 between the electrode interconnects and interconnections to the external route terminals are formed by vapor deposition, printing, or a combination of plating and photoetching techniques.

In this way, in order to prevent contact between the substrate part of the semiconductor pellet (which usually has the lowest potential) and the conductor for mating wiring, the protrusions 15a and 15b of the insulating film on the semiconductor pellet and the semiconductor wiring on the semiconductor pellet are protected. By using a pellet having a structure in which the insulating film 55 extends outward from the periphery of the pellet, the interconnection 60 as described above can be made possible, and the process can be significantly simplified compared to the conventional method.

As described above, according to the present invention, (1) One step can be omitted because a pellet is adopted in which the insulating film on the semiconductor pellet is extended outward from the periphery of the pellet.

(2) Therefore, the difference in level between interconnections is significantly reduced compared to the conventional method, and there is no disconnection at the step, which improves yield and enables fine interconnection.

(3) In the conventional method, the interconnection had a large step difference of 10μ or more, so vapor deposition and plating had to be used in common.
In the present invention, since the thickness is about 1 μm, a sufficiently reliable conductor can be formed by vapor deposition alone.

It is possible to produce products with excellent industrial value.

[Brief explanation of the drawing]

Figures 1 A to D are interconnection process diagrams of semiconductor pellets, Figure 2
FIGS. 3A to 3C are cross-sectional views of the manufacturing process of a semiconductor pellet used in the present invention, and FIGS. 3A to 3E are mutual wiring process views according to an embodiment of the present invention. 11...Silicon substrate, 15...Silicon oxide film, 15
a, 15b...protrusion of silicon oxide film, 30, 40...
... Semiconductor pellet, 51 ... Transparent substrate, 52 ... Positioning mark, 53 ... Temporary fixing adhesive, 54 ... Resin, 5
5... Insulating film, 56, 57... Al wiring electrode, 60...
Mutual wiring.

Claims (1)

[Claims] 1. A plurality of semiconductor pellets each having a structure in which a circuit element is configured and an insulating film protrudes beyond the periphery are placed on the other main surface of a transparent substrate having alignment marks on the first main surface. A process of adhering and fixing to a surface via an adhesive, a process of filling and curing resin from the side of the semiconductor pellet, and then removing the transparent substrate and the adhesive, and a process of attaching a specific electrode of the semiconductor pellet to the semiconductor pellet. A method of manufacturing a semiconductor device, which includes a step of connecting each other with conductor wiring.