JPS5820298B2 - Compound film formation method - Google Patents
Compound film formation methodInfo
- Publication number
- JPS5820298B2 JPS5820298B2 JP54053452A JP5345279A JPS5820298B2 JP S5820298 B2 JPS5820298 B2 JP S5820298B2 JP 54053452 A JP54053452 A JP 54053452A JP 5345279 A JP5345279 A JP 5345279A JP S5820298 B2 JPS5820298 B2 JP S5820298B2
- Authority
- JP
- Japan
- Prior art keywords
- compound layer
- interface
- compound
- film
- compound film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 150000001875 compounds Chemical class 0.000 title claims description 28
- 238000000034 method Methods 0.000 title claims description 9
- 230000015572 biosynthetic process Effects 0.000 title description 4
- 239000010408 film Substances 0.000 claims description 14
- 239000007787 solid Substances 0.000 claims description 11
- 239000002184 metal Substances 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000010409 thin film Substances 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 238000002844 melting Methods 0.000 claims description 2
- 230000008018 melting Effects 0.000 claims description 2
- 239000000470 constituent Substances 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- 150000002500 ions Chemical class 0.000 description 17
- 238000010438 heat treatment Methods 0.000 description 7
- 239000000758 substrate Substances 0.000 description 7
- 238000007796 conventional method Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 2
- 238000010884 ion-beam technique Methods 0.000 description 2
- 229910020968 MoSi2 Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000008707 rearrangement Effects 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Vapour Deposition (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Silicon Compounds (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
Description
【発明の詳細な説明】
この発明は、イオンビームを用いて界面を接する２種の
固体の間に化合物層を形成させる化合物膜形成方法に関
するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a compound film forming method in which a compound layer is formed between two solids that are in contact with an interface using an ion beam.
第１図は従来のこの種の技術を説明する図である。FIG. 1 is a diagram illustrating a conventional technique of this type.
この図で、１はＳｉ基板であり、この表面を清浄にして
から、例えばＭＯの金属薄膜２を蒸着し、次いで全体を
１０００℃以上の高温に加熱することでＭｏとＳｉの化
合物を両者の界面に作り、金属薄膜２をＳｉ基板１に強
固に付着させ、電気的特性を向上させていた。In this figure, 1 is a Si substrate. After cleaning the surface, a thin metal film 2 of MO, for example, is deposited, and then the whole is heated to a high temperature of 1000°C or more to remove the compound of Mo and Si. The thin metal film 2 was formed on the interface to firmly adhere to the Si substrate 1, thereby improving electrical characteristics.
しかし、Ｍｏのように融点の高い金属薄膜２では加熱温
度を上記のように高温にしないと実際的な速さで化合物
層を成長させることができないという欠点があった。However, the metal thin film 2 having a high melting point, such as Mo, has a drawback in that the compound layer cannot be grown at a practical speed unless the heating temperature is raised to a high temperature as described above.
この発明は、上記の欠点を除去するためになされたもの
であって、次のような事実に基づくものである。This invention was made to eliminate the above-mentioned drawbacks, and is based on the following facts.
すなわち、第２図のように一般に密着性よく界面４を接
する別種の固体５と固体６から成る系を加熱しながら、
界面４を貫通するような条件で加速されたイオンを照射
すると、界面近傍における化合物層形成が著しく促進さ
せることが実験的に明らかになった。That is, as shown in FIG. 2, while heating a system consisting of solids 5 and 6 of different types, which are generally in close contact with each other at an interface 4,
It has been experimentally revealed that irradiation with accelerated ions under such conditions that they penetrate the interface 4 significantly promotes the formation of a compound layer in the vicinity of the interface.
以下この発明について具体的に説明する。This invention will be explained in detail below.
第３図はこの発明の一実施例を示す断面図である。FIG. 3 is a sectional view showing an embodiment of the present invention.
この図において、Ｓｉ基板１１に厚さ７５０人のＮｂ膜
１２を蒸着し、その後、室温３００℃５００℃において
２００ｋｅＶのＡｒ＋イオンを照射した。In this figure, an Nb film 12 with a thickness of 750 ml was deposited on a Si substrate 11, and then Ar+ ions of 200 keV were irradiated at a room temperature of 300° C. and 500° C.
その結果、ＮｂとＳｉの化合物（ＮｂＳ ｌ ２ ）で
ある化合物層１３の形成が生じ、照射時の温度が高い程
一定の照射量で厚い化合物層１３が形成されることが見
出された。As a result, it was found that a compound layer 13 made of a compound of Nb and Si (NbS l 2 ) was formed, and that the higher the temperature during irradiation, the thicker the compound layer 13 was formed with a constant irradiation dose.
室温での照射では界面付近の原子分布に変化は生じるが
、定比の組成をもつ化合物層は形成されない。When irradiated at room temperature, the atomic distribution near the interface changes, but a compound layer with a stoichiometric composition is not formed.
この時、化合物層１３が形成されるためには界面を多数
のイオンが貫通するような条件でイオン照射がなされて
いる必要がある。At this time, in order to form the compound layer 13, ion irradiation must be performed under conditions such that a large number of ions penetrate the interface.
しかし、従来のような高温は必要としない。However, it does not require high temperatures like conventional methods.
そして、化合物層１３の厚さはイオン照射量にほぼ比例
して単調に増加する。The thickness of the compound layer 13 increases monotonically almost in proportion to the amount of ion irradiation.
イオン照射量は電気的に計測制御できるので、この発明
の方法により形成される化合物層１３の厚さを従来の方
法より正確に制御することができる。Since the ion irradiation amount can be measured and controlled electrically, the thickness of the compound layer 13 formed by the method of the present invention can be controlled more accurately than conventional methods.
上記の実施例において、Ｎｂ膜１２の全面ではなく所定
の部分たけに化合物層１３を形成したい時には、Ｎｂ膜
１２上にイオン照射に対する所要形状のマスクを形成し
てからイオン照射を行うようにすればよい。In the above embodiment, when it is desired to form the compound layer 13 only on a predetermined portion of the Nb film 12 instead of on the entire surface, a mask having the desired shape for ion irradiation is formed on the Nb film 12 before ion irradiation is performed. Bye.
このようにＳｉ基板１１を３００℃という比較的低い温
度に加熱しながらイオン照射を行うと化合物層１３の形
成が著しく促進される。When ion irradiation is performed while heating the Si substrate 11 to a relatively low temperature of 300° C. in this manner, the formation of the compound layer 13 is significantly promoted.
なお、この現象は照射イオン電流に対する依存性を示さ
ず、イオン照射による効果は加熱効果ではない。Note that this phenomenon does not show dependence on the ion irradiation current, and the effect of ion irradiation is not a heating effect.
また、Ｓｉ基板１１上に蒸着されたＭｏ膜に対しても上
記のような方法でＭｏＳｉ２層を形成することかできた
。Furthermore, a MoSi2 layer could be formed on the Mo film deposited on the Si substrate 11 using the method described above.
さらに、イオン照射による化合物層の形成は、入射イオ
ンが該固体界面付近の原子と衝突してそれをはね飛ばす
ことが原因となっているのが、Ｎｂ膜とＳｉ基板との系
について確認されている。Furthermore, it has been confirmed for the system of Nb film and Si substrate that the formation of a compound layer by ion irradiation is caused by the incident ions colliding with atoms near the solid interface and scattering them. ing.
すなわち、はじき飛ばされた原子またはそれが抜けた後
の空孔の運動が入射イオンから与えられたエネルギｉお
よび熱エネルギーによって起こり、この運動が化合物層
の形成反応を進行させる。That is, the movement of the repelled atoms or the vacancies after they have escaped is caused by the energy i and thermal energy given by the incident ions, and this movement advances the compound layer forming reaction.
その際、イオン照射は同時に原子配列を乱す効果もおよ
ぼすため、該固体を原子の局所的な再配列が許される程
度の温度に加熱することが化合物層の形成のために必要
である。At this time, since ion irradiation also has the effect of disturbing the atomic arrangement, it is necessary to heat the solid to a temperature that allows local rearrangement of the atoms in order to form the compound layer.
この発明は、このような機構に基づくものであるから、
原理的に特定の系に効果が限定されることはなく、一般
の固体について適用することができる。Since this invention is based on such a mechanism,
In principle, the effect is not limited to a specific system and can be applied to general solids.
以上説明したように、この発明は密着性よく相接してい
る２種の固体を加熱しながらイオン照射を行うことで、
それらの界面付近にもとの固体に含まれていた元素から
なる化合物層を形成させることができる。As explained above, this invention involves ion irradiation while heating two solids that are in close contact with each other.
A compound layer made of elements contained in the original solid can be formed near the interface between them.
この発明の方法によると、従来のような高温の加熱を必
要とせず、かつ、イオン照射した部分にのみ化合物層を
作れるので、従来のような加熱を部分的に施せない所で
も化合物層を作ることができる。According to the method of this invention, there is no need for high-temperature heating as in the conventional method, and a compound layer can be created only in the ion-irradiated area, so a compound layer can be created even in places where heating cannot be applied locally as in the conventional method. be able to.
また、イオン照射量によって化合物層厚を設定できるの
で従来の方法より制御性が向上する。Furthermore, since the thickness of the compound layer can be set depending on the amount of ion irradiation, controllability is improved compared to conventional methods.
従って、この発明は集積回路の作製において配線の固定
化やＳｉと金属膜の電気的接続特性の向上等電子工業に
広範な応用が期待されるものである。Therefore, this invention is expected to have wide applications in the electronic industry, such as fixing wiring and improving electrical connection characteristics between Si and metal films in the production of integrated circuits.
第１図は従来の化合物膜形成方法を説明するための断面
図、第２図はこの発明の詳細な説明するための図、第３
図はこの発明の一実施例を示す断面図である。
図中、４は界面、５と６は別種の固体、７はイオンビー
ム、１１はＳｉ基板、１２はＮｂ膜、１３は化合物層で
ある。FIG. 1 is a cross-sectional view for explaining the conventional compound film forming method, FIG. 2 is a diagram for explaining the present invention in detail, and FIG.
The figure is a sectional view showing an embodiment of the present invention. In the figure, 4 is an interface, 5 and 6 are different types of solids, 7 is an ion beam, 11 is a Si substrate, 12 is an Nb film, and 13 is a compound layer.
Claims (1)
通過するようなイオン照射を施し、それぞれの固体の１
つ以上の構成元素より成る化合物層を成長させることを
特徴とする化合物膜形成方法。 ２２種の固体の内１種が硅素であり他の１種が金属薄膜
であることを特徴とする特徴とする特許請求の範囲第１
項記載の化合物膜形成方法。 ３ 金属薄膜が高融点金属薄膜であることを特徴とする
特許請求の範囲第２項記載の化合物膜形成方法。[Claims] 1. Ion irradiation that passes through the interface is applied to two solids that are in contact with each other at the interface, and 1 of each solid is heated.
A method for forming a compound film, characterized by growing a compound layer comprising three or more constituent elements. Claim 1 characterized in that one of the 22 types of solids is silicon and the other one is a metal thin film.
The compound film forming method described in . 3. The compound film forming method according to claim 2, wherein the metal thin film is a high melting point metal thin film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP54053452A JPS5820298B2 (en) | 1979-05-02 | 1979-05-02 | Compound film formation method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP54053452A JPS5820298B2 (en) | 1979-05-02 | 1979-05-02 | Compound film formation method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS55149116A JPS55149116A (en) | 1980-11-20 |
| JPS5820298B2 true JPS5820298B2 (en) | 1983-04-22 |
Family
ID=12943240
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP54053452A Expired JPS5820298B2 (en) | 1979-05-02 | 1979-05-02 | Compound film formation method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5820298B2 (en) |
-
1979
- 1979-05-02 JP JP54053452A patent/JPS5820298B2/en not_active Expired
Non-Patent Citations (2)
| Title |
|---|
| APPLICATIONS OF ION BEAMS TO METALS=1974 * |
| ION IMPLAN TATION IN SEMICNDV-CTORS=1971 * |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS55149116A (en) | 1980-11-20 |
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