JPS5857909B2 - Bipolar hand grip - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to improvements in bipolar semiconductor integrated circuit devices.

Conventional bipolar integrated circuit device (hereinafter abbreviated as IC)
It is customary to connect a power source in addition to input/output signals to perform logical operations.

However, this power supply circuit is used by applying only a positive power supply, and since applying a negative power supply would destroy the IC, this type of usage has not been carried out.

FIG. 1 shows a cross-sectional view of a normal bipolar IC, and also shows its input/output terminals and power supply circuit.

This means that - conductivity type basic 1 is provided with a diffusion region 2.3 of the opposite conductivity type, and this region 3 is used as a collector and base 4.
and form an emitter 5.

This is achieved by forming a further diffusion region in the diffusion region 3.

Another region 2 is also provided with a diffusion region 6.7 of one conductivity type.

Next, the connection of the power supply circuit and the input/output terminals will be described. The output terminal uses the collector 3 of the NPNTr as the output terminal, and is also connected to the diffusion region 7 of one conductivity type.

The input terminal is connected to a diffusion region 6 of one conductivity type, which is connected to the base 4 of the NPNTr, and the emitter 5 is connected to GND of the power supply circuit, which is also connected to the semiconductor body 1.

Further, VCC of the power supply circuit is connected not only to the opposite conductive shadow region 2 but also to the opposite conductive region 7.

In this type of circuit connection, when a negative potential is applied to the GND terminal, this potential is transmitted to the CC terminal through the opposite conductivity type diffusion region 2 and the diode formed in the semiconductor substrate, so that excessive current can cause It will be destroyed.

The input terminal and the output terminal are connected to one conductivity type diffusion region 6.7, and when this potential becomes higher than that of VCC, it flows to VCC through the negative direction diode formed in each diffusion region 6, 7. It had drawbacks such as being destroyed by excessive current.

The present invention provides a novel bipolar semiconductor integrated circuit device that eliminates the above drawbacks.

That is, by connecting a power supply circuit terminal to an opposite conductivity type diffusion region provided in a semiconductor substrate of one conductivity type, VCC and G
Care has been taken to prevent damage even if the ND terminal is connected in reverse.

This is because when a semiconductor substrate is used as a GND terminal, a parasitic reverse transistor (hereinafter abbreviated as Tr) is obtained by forming an opposite conductivity type region in this semiconductor substrate, and a single conductor is also formed in this opposite conductivity type diffusion region. By forming a shadow region, the forward direction Tr is parasitic, and the negative potential applied to the GND terminal flows to the opposite conductivity type diffusion region by the reverse direction Tr, but is prevented from reaching the VCC terminal by the forward direction Tr. .

Next, the present invention will be explained in detail with reference to the embodiment shown in FIG.

N conductivity type diffusion regions 11 and 12 in a P conductivity type semiconductor substrate 10
is formed, and in this one region 12, an NPNTr is formed using this as a collector layer.

That is, P and N conductive shadow regions 13 and 14 are provided in the region 12, and these are used as a base layer and an emitter layer.
form r.

The diffusion region 11 of the opposite conductivity type includes a P conductivity region 15.1.
6 and 17 are provided and connected to the CC terminal, input terminal, and output terminal.

Connections between the P conductive shadow area 15°16.17 and each terminal are arbitrary, but in the figure, the area 15 is connected to the CC terminal, the area 16 is connected to the input terminal, and the area 17 is connected to the output terminal.

Further, the P conductive shadow region 16 is also connected to the base layer 13 of the NPNTr, and the P conductive shadow region 17 is connected to the VCC terminal and the collector layer 12 of the NPNTr.

The collector layer 12 of the NPNTr also connects the emitter layer 14 of the outer NPNTr, which connects the outer conductor base 10 serving as an output terminal to GND, to this GND terminal.

In a bipolar type IC connected in this way, even if the connection between the GND terminal and the CC terminal is reversed, the current will be blocked by the forward direction transistor parasitic to the P conductive shadow region 15, so that the IC will not be destroyed.

Since the conductive shadow regions 15, 16, and 17 are used as resistors, they are made elongated in the direction perpendicular to the main surface of the semiconductor substrate, that is, the direction perpendicular to the diffusion depth direction xj.

This is to ensure that it functions as a resistance component when the potential of the input/output terminal becomes higher than VCC.

In this example, the VCC terminal is connected to one end of the P conductive shadow region 15, the other end of the P conductive shadow region 15 is connected to the diffusion region 11, and the power supply potential is changed by operating the P conductive shadow region 15 as a resistor. This prevents the bipolar IC from being destroyed even if the reverse occurs, or even if the input/output terminal potential is held higher than that of the VCC terminal.

As described above, the bipolar IC according to the present invention is extremely convenient for consumers because it will not be destroyed even if the output potential becomes higher than the VCC potential or even if the CC terminal and GND terminal are connected in reverse. The practical effects are extremely significant.

Moreover, since the means for achieving this is a simple method that utilizes the polarity of the parasitic diode, it can be achieved without increasing the number of steps.

[Brief explanation of the drawing]

FIG. 1 is a sectional view of a conventional bipolar IC, and FIG. 2 is a sectional view of a bipolar IC according to the present invention. 10: conductivity type semiconductor substrate; 11: opposite conductivity shadow region;

Claims (1)

[Claims] 1-A semiconductor substrate of a conductivity type, a circuit element formed on this semiconductor substrate, a first region of an opposite conductivity type, and second, third and second regions of one conductivity type formed in the first region. a first power supply connected to one end of each of the second and fourth regions, and a first wiring connecting the other end of the second region and the first region; a second wiring connecting the other end of the fourth region and the circuit element; an output terminal connected to the second wiring; an input connected to one end of the third region; A bi-porch type semiconductor integrated circuit device comprising: a third wiring connecting the other end of the third region and the circuit element; and a second power supply connected to the semiconductor substrate and the circuit element.