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JPS5911321B2 - How to clean a centrifugal thin film evaporator - Google Patents
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JPS5911321B2 - How to clean a centrifugal thin film evaporator - Google Patents

How to clean a centrifugal thin film evaporator

Info

Publication number
JPS5911321B2
JPS5911321B2 JP3613177A JP3613177A JPS5911321B2 JP S5911321 B2 JPS5911321 B2 JP S5911321B2 JP 3613177 A JP3613177 A JP 3613177A JP 3613177 A JP3613177 A JP 3613177A JP S5911321 B2 JPS5911321 B2 JP S5911321B2
Authority
JP
Japan
Prior art keywords
cleaning
thin film
liquid
film evaporator
centrifugal thin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP3613177A
Other languages
Japanese (ja)
Other versions
JPS53122675A (en
Inventor
保徳 真崎
義之 高村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP3613177A priority Critical patent/JPS5911321B2/en
Publication of JPS53122675A publication Critical patent/JPS53122675A/en
Publication of JPS5911321B2 publication Critical patent/JPS5911321B2/en
Expired legal-status Critical Current

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01DSEPARATION
    • B01D1/00Evaporating
    • B01D1/22Evaporating by bringing a thin layer of the liquid into contact with a heated surface
    • B01D1/222In rotating vessels; vessels with movable parts
    • B01D1/223In rotating vessels; vessels with movable parts containing a rotor
    • B01D1/225In rotating vessels; vessels with movable parts containing a rotor with blades or scrapers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Vaporization, Distillation, Condensation, Sublimation, And Cold Traps (AREA)

Description

【発明の詳細な説明】 本発明は、遠心薄膜蒸発装置の洗浄方法に関するもので
あり,特に処理液が付着性を有するために遠心薄膜蒸発
器内部を頻繁に洗浄しなければならないものや、処理目
的が残渣ケ粉体で得る場合、あるいは濃縮度に厳しいコ
ントロールを要求される場合のように残渣側に洗浄液が
混入することケ嫌う場合に適するものである。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for cleaning centrifugal thin film evaporators, particularly those in which the inside of the centrifugal thin film evaporator must be frequently cleaned because the processing liquid has adhesive properties, and This is suitable when the purpose is to obtain a powdered residue, or when strict control of the degree of concentration is required, where mixing of the cleaning liquid into the residue side is undesirable.

従来の遠心薄膜蒸発装置の洗浄方法の一例を第1図によ
って説明すると、処理液は処理液槽1から元弁2を通し
て供給ポンプ3により流量調節弁4を通って遠心薄膜蒸
発器5に供給される。
An example of a conventional cleaning method for a centrifugal thin film evaporator will be explained with reference to FIG. 1. A processing liquid is supplied from a processing liquid tank 1 through a main valve 2 to a centrifugal thin film evaporator 5 by a supply pump 3 through a flow control valve 4. Ru.

遠心薄膜蒸発器5において、処理液は回転翼6による遠
心力により蒸発器伝熱面を濡れ壁状態となって下降し、
熱媒入口14より供給される熱媒によって加熱され,蒸
発成分は凝縮器7を通って凝縮した後凝縮液槽8に貯め
られる。
In the centrifugal thin film evaporator 5, the processing liquid descends on the evaporator heat transfer surface in the form of a wet wall due to the centrifugal force caused by the rotary blades 6.
It is heated by the heat medium supplied from the heat medium inlet 14, and the evaporated components are condensed through the condenser 7 and then stored in the condensate tank 8.

一方,残渣は残渣弁9を通って残渣槽10に貯められる
On the other hand, the residue passes through the residue valve 9 and is stored in the residue tank 10.

処理液が付着性を有する場合、処理時間とともに遠心薄
膜蒸発器5の伝熱面や回転翼6に付着し、伝熱能力の低
下や過負荷等を招き、定期的に内部洗浄を行なう必要が
生ずる。
If the treatment liquid has adhesive properties, it will adhere to the heat transfer surface and rotor blades 6 of the centrifugal thin film evaporator 5 over time, resulting in a decrease in heat transfer capacity and overload, and it is necessary to periodically clean the inside. arise.

洗浄方法の一例として、処理液の蒸発成分を洗浄液とす
る場合について説明する。
As an example of the cleaning method, a case will be described in which the evaporated component of the processing liquid is used as the cleaning liquid.

処理液槽1の元弁2を閉じ、残渣弁9を閉じて洗浄液排
出弁11を開く。
The main valve 2 of the processing liquid tank 1 is closed, the residue valve 9 is closed, and the cleaning liquid discharge valve 11 is opened.

次に洗浄液注入弁13を開き、供給ポンプ3によって遠
心薄膜蒸発器5内に洗浄液を供給し内部洗浄を行なう。
Next, the cleaning liquid injection valve 13 is opened, and the cleaning liquid is supplied into the centrifugal thin film evaporator 5 by the supply pump 3 to perform internal cleaning.

洗浄液は洗浄液排出弁11全通して洗浄液槽12に貯め
られる。
The cleaning liquid passes completely through the cleaning liquid discharge valve 11 and is stored in the cleaning liquid tank 12.

しかしながら、従来の洗浄方法によると、処理液の付着
性が強い場合には以上の操作を頻繁に行なわなければな
らず、特に残渣を粉体で得ることが目的の場合のように
、洗浄液の混入を嫌う場合には、構造的に完全密閉が必
要であり、装置が複雑となる。
However, according to conventional cleaning methods, if the processing solution is highly adhesive, the above operations must be performed frequently, and the cleaning solution may be mixed in, especially when the purpose is to obtain the residue in powder form. If this is not desired, complete sealing is required structurally, making the device complex.

また、洗浄後も洗浄液の乾燥のための時間が必要になる
等の問題があった。
Further, there are problems such as the need for time to dry the cleaning liquid even after cleaning.

本発明は,洗浄液を残渣側に侵入させることなく付着物
を除去することを目的としたもので、特に洗浄が頻繁に
必要なものに対して、装置を完全に停止させることなく
供給液を洗浄液に切り替え、洗浄液の蒸発な行なわしめ
つつ付着物の洗滌を同時に行なわせるもので、洗滌操作
の簡略化を目的とするものである。
The purpose of the present invention is to remove deposits without intruding the cleaning liquid into the residue side, and in particular, for items that require frequent cleaning, the supply liquid can be replaced with the cleaning liquid without completely stopping the equipment. The purpose is to simplify the cleaning operation by switching to evaporation of the cleaning liquid and cleaning the deposits at the same time.

本発明は、特に粉体化あるいは高濃縮処理を目的とする
場合のように、洗浄液が残渣側に侵入することケ嫌う場
合の洗浄方法として、洗浄液の供給量を処理液供給量と
同等あるいはそれ以上で、かっ、完全蒸発量以下とした
ことを特徴とするもので、特に洗浄液として処理液の蒸
発成分あるいは処理液より蒸発しやすい液体を用いれば
、処理液の供給量以上の量まで供給しても完全蒸発させ
ることができることに着眼したものである。
The present invention provides a cleaning method in which the amount of cleaning liquid supplied is equal to or higher than the amount of processing liquid supplied, as a cleaning method when it is disliked that the cleaning liquid enters the residue side, such as when the purpose is powderization or highly concentrated processing. As described above, the feature is that the amount of evaporation is less than the complete evaporation amount.In particular, if an evaporable component of the processing liquid or a liquid that evaporates more easily than the processing liquid is used as the cleaning liquid, it is possible to supply an amount exceeding the supply amount of the processing liquid. This technology focuses on the fact that it can be completely evaporated.

以下,本発明実施の一例を第2図,第3図によって説明
する。
An example of implementing the present invention will be described below with reference to FIGS. 2 and 3.

第2図において第1図と同部分は同符号で示す。In FIG. 2, the same parts as in FIG. 1 are indicated by the same symbols.

洗浄が必要となるまでの処理液の供給量と時間の関係は
、第3図において時間t。
The relationship between the amount of processing liquid supplied and the time until cleaning becomes necessary is shown at time t in FIG.

からt1で表わされる。is expressed as t1.

時間t1において元弁2を閉じ、処理液の供給を停止す
る。
At time t1, the main valve 2 is closed and the supply of the processing liquid is stopped.

次いて洗浄液注入弁13を開き洗浄液を供給する。Next, the cleaning liquid injection valve 13 is opened to supply the cleaning liquid.

洗浄液は流量調節弁4によって調節され、遠心薄膜蒸発
器5に供給される。
The cleaning liquid is regulated by a flow control valve 4 and supplied to a centrifugal thin film evaporator 5.

洗浄液は時間t2において、処理液の供給量以下の供給
量より供給を始めれば、完全に蒸発きせることかでき、
まず供給口付近より洗浄されて付着物は除去され、伝熱
特性は回復される。
At time t2, the cleaning liquid can be completely evaporated by starting the supply at an amount less than the processing liquid supply amount.
First, the vicinity of the supply port is cleaned to remove deposits and restore heat transfer characteristics.

次に洗浄液の供給量を徐々に増加させれば、それととも
に洗浄域が広がって行き、処理液の供給量より大きな量
の洗浄液を供給しても、完全蒸発させることができる。
Next, if the supply amount of the cleaning liquid is gradually increased, the cleaning area will expand accordingly, and even if the cleaning liquid is supplied in an amount larger than the supply amount of the processing liquid, complete evaporation can be achieved.

この最大洗浄液供給量Qmは実験的に求められる。This maximum cleaning liquid supply amount Qm is determined experimentally.

伝熱面積1iの遠心薄膜蒸発装置の実験例では、スラリ
ー液の蒸発乾燥処理能力は100kg/hであり,スラ
リー液の蒸発物である水だけの完全蒸発量は120kg
/hであった。
In an experimental example of a centrifugal thin film evaporator with a heat transfer area of 1i, the evaporation drying capacity of the slurry liquid is 100 kg/h, and the complete evaporation amount of only water, which is the evaporated product of the slurry liquid, is 120 kg.
/h.

スラリー液の処理時間と共に伝熱面には薄いスラリー液
が固化したものが付着し、蒸発乾燥能力が低下し始めた
ので一旦スラリー液の供給を停止し、洗浄液として水’
i90k9/hの供給量で5分間供給し、更に10kg
/hずつ5分間隔で増加させ、最大120kg/hまで
供給した結果、伝熱面の付着固形分は乾燥状態で残渣槽
10に落下し,遠心薄膜蒸発器5の内部を洗浄すること
ができた。
As the processing time for the slurry liquid increased, a thin layer of solidified slurry liquid adhered to the heat transfer surface, and the evaporative drying ability began to decline.
Supplied for 5 minutes at a supply rate of i90k9/h, and then 10kg
/h at 5-minute intervals to a maximum of 120 kg/h. As a result, the solid content adhering to the heat transfer surface falls into the residue tank 10 in a dry state, and the inside of the centrifugal thin film evaporator 5 can be cleaned. Ta.

洗浄液の増加は,第3図に示すごとく、階段状に増加さ
せても、時間に比例させて増加させてもよい。
The amount of cleaning liquid may be increased stepwise or in proportion to time as shown in FIG.

また時間t2より最大洗浄供給量Qm流すこともあり得
る。
It is also possible that the maximum cleaning supply amount Qm is supplied from time t2.

なお、時間t1,t2ぱ同時であってもよい。Note that times t1 and t2 may be simultaneous.

洗浄液として処理液の蒸発成分以外のもの全使用する場
合も、処理液より蒸発し易いものを選定すれば、上述の
場合と全く同様の方法で洗浄することができる。
Even when all components other than the evaporable components of the processing liquid are used as the cleaning liquid, cleaning can be carried out in exactly the same manner as in the above case by selecting a cleaning liquid that evaporates more easily than the processing liquid.

以上述べたように本発明は、遠心薄膜蒸発装置の洗浄液
として処理液の蒸発成分あるいは処理液よりも蒸発しや
すい液体を使用し,処理液の供給量以下の量から徐々に
増加でせて遠心薄膜蒸発器の完全蒸発させることのでき
る量以下の量までの範囲で洗浄することにより、残渣側
に洗浄液を侵入させることなく遠心薄膜蒸発器内部の付
着物を除去することができ、洗浄液の侵入を防ぐための
密閉装置,洗浄後の乾燥装置が不要となって装置を簡易
化することができ、運転操作も容易であることから装置
を一旦停止して洗浄する必要がなく、連続的に処理と洗
浄を行なうことができることから実運転時間を向上させ
る効果がある。
As described above, the present invention uses an evaporable component of the processing solution or a liquid that evaporates more easily than the processing solution as a cleaning solution for a centrifugal thin film evaporator, and gradually increases the amount from less than or equal to the supply amount of the processing solution to reduce the centrifugation. By cleaning the thin film evaporator to an amount that is less than the amount that can be completely evaporated, it is possible to remove the deposits inside the centrifugal thin film evaporator without letting the cleaning liquid enter the residue side, and prevent the intrusion of the cleaning liquid. The equipment can be simplified by eliminating the need for a sealing device to prevent drying and a drying device after cleaning, and because it is easy to operate, there is no need to stop the equipment for cleaning, allowing continuous processing. This has the effect of improving the actual operating time since cleaning can be performed.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は従来の遠心薄膜蒸発装置の洗浄方法の一例を示
す系統図、第2図は本発明による洗浄方法の一例を示す
遠心薄膜蒸発装置の系統図、第3図は本発明による洗浄
方法の→0として処理液および洗浄液の量と時間の関係
を示す線図である。 1・・・・・・処理液槽、2・・・・・・元弁、3・・
・・・・供給ポンプ、4・・・・・・流量調節弁、5・
・・・・・遠心薄膜蒸発器、6・・・・・・回転翼、7
・・・・・・凝縮器、8・・・・・・凝縮液槽、9・・
・・・・残渣弁、10・・・・・・残渣槽、11・・・
・・・洗浄液排出弁、12・・・・・・洗浄液槽、13
・・・・・・洗浄液注入弁、14・・・・・・熱媒入口
、15・・・・・・熱媒出口、16・・・・・・処理液
供給、17・・・・・・洗浄液供給。
FIG. 1 is a system diagram showing an example of a conventional cleaning method for a centrifugal thin film evaporator, FIG. 2 is a system diagram of a centrifugal thin film evaporator showing an example of a cleaning method according to the present invention, and FIG. 3 is a system diagram showing an example of a cleaning method according to the present invention. FIG. 3 is a diagram showing the relationship between the amount of processing liquid and cleaning liquid and time as →0. 1... Processing liquid tank, 2... Main valve, 3...
...Supply pump, 4...Flow rate control valve, 5.
... Centrifugal thin film evaporator, 6 ... Rotating blade, 7
...Condenser, 8...Condensate tank, 9...
...Residue valve, 10...Residue tank, 11...
...Cleaning liquid discharge valve, 12...Cleaning liquid tank, 13
...Cleaning liquid injection valve, 14... Heat medium inlet, 15... Heat medium outlet, 16... Processing liquid supply, 17... Cleaning liquid supply.

Claims (1)

【特許請求の範囲】 1 処理液を遠心薄膜蒸発器内に所定時間供給して蒸発
濃縮処理を行なった後、一旦処理液の供給を停止して、
処理液よりも蒸発量の多い洗浄液を遠心薄膜蒸発器内に
供給し、洗浄液を完全蒸発させながら遠心薄膜蒸発器内
部を洗浄することを特徴とする遠心薄膜蒸発装置の洗浄
方法。 2 処理液の蒸発成分を洗浄液として供給するようにし
た特許請求の範囲第1項記載の遠心薄膜蒸発装置の洗浄
方法。
[Scope of Claims] 1. After the processing liquid is supplied into the centrifugal thin film evaporator for a predetermined period of time to perform evaporation concentration processing, the supply of the processing liquid is temporarily stopped, and
A method for cleaning a centrifugal thin film evaporator, characterized by supplying a cleaning liquid having a larger evaporation amount than a processing liquid into the centrifugal thin film evaporator, and cleaning the inside of the centrifugal thin film evaporator while completely evaporating the cleaning liquid. 2. A method for cleaning a centrifugal thin film evaporator according to claim 1, wherein an evaporated component of the processing liquid is supplied as a cleaning liquid.
JP3613177A 1977-04-01 1977-04-01 How to clean a centrifugal thin film evaporator Expired JPS5911321B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3613177A JPS5911321B2 (en) 1977-04-01 1977-04-01 How to clean a centrifugal thin film evaporator

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3613177A JPS5911321B2 (en) 1977-04-01 1977-04-01 How to clean a centrifugal thin film evaporator

Publications (2)

Publication Number Publication Date
JPS53122675A JPS53122675A (en) 1978-10-26
JPS5911321B2 true JPS5911321B2 (en) 1984-03-14

Family

ID=12461218

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3613177A Expired JPS5911321B2 (en) 1977-04-01 1977-04-01 How to clean a centrifugal thin film evaporator

Country Status (1)

Country Link
JP (1) JPS5911321B2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58124501A (en) * 1982-01-20 1983-07-25 Hitachi Ltd Operation of centrifugal thin film evaporator

Also Published As

Publication number Publication date
JPS53122675A (en) 1978-10-26

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