JPS591238B2 - Formation method of liquid phase epitaxial growth layer - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for forming a liquid phase epitaxial growth layer by sequentially stacking a plurality of liquid phase epitaxial growth layers on a required substrate, and particularly relates to a method for forming a liquid phase epitaxial growth layer by sequentially stacking a plurality of liquid phase epitaxial growth layers on a required substrate. The purpose of the present invention is to provide a novel liquid phase epitaxial growth layer that can be easily obtained as having a desired highly precise composition and thickness, and is suitable for application to, for example, a method for manufacturing a heterojunction semiconductor laser. It is something.

In the following, the present invention will be described as being applied to a method for manufacturing a heterojunction semiconductor laser. FIGS. 1A to 1E show an apparatus for forming a liquid phase epitaxial growth layer used in a method for forming a liquid phase epitaxial growth layer according to the present invention. An example is shown in which a plurality of four liquid phase epitaxial growth layers Al, A2, A3 and A4 (
A fixed support plate 4 has a substrate placement recess 2 formed on the soil surface 3 side in which a substrate 1 (not shown) formed by sequentially stacking substrates 1 (not shown) is placed. A movably arranged substrate arrangement plate 5 and a plurality of four through holes Bl, B2, B3 and B4 for forming a melt holding part are sequentially formed, and other melting holes are formed between the through holes B2 and B3. A plate for forming a fixed melt holding part is arranged in a relationship to be fixed to the fixed support plate 4 (the means thereof is not shown) on the board arrangement plate 5 formed with a through hole Bi for forming a liquid holding part. 6, and a plurality of 5 (=4+1) through holes Cl, C2...C5 for forming a melt holding part are sequentially formed, and another through hole for forming a melt holding part is formed between the through holes C3 and C5. A plate 7 for forming a movable melt holding part which is slidably arranged on a plate 6 for forming a fixed melt holding part formed by Cf, a board 5 for arranging a substrate, and a plate 7 for forming a movable melt holding part. The plate 5 for board arrangement shown in FIG.
At the initial position, the upper surface 3 of the substrate placement plate 5 and the through holes B1 to B4 and Bf of the fixing plate 6 cooperate to form a plurality of four melt holding parts D1 to D4 and another one. (However, in FIG. 1A, as will be clear from the section described later, the melt holding portions D1 to D2'' are formed.)
In order to accommodate the required material in the required melt holding portions in D4 and D2', the movable plate 7 is provided with through holes C2 to C5 and C!, by way of example only. The board shown in FIG. 1B is shown in a sliding position on the fixing plate 6 which communicates exactly with the through holes B1 to B4 and B of the fixing plate 6. At the initial position of the arrangement plate 5 and the movable plate 7, the soil surface 10 of the fixed plate 6 (!: through hole C2 of the movable plate 7)
By working together with C5 and Cf, a plurality of 4 (=5-1) melt holding parts E1 to E4 and another melt holding part Eda are formed, and further a first At the initial position of the board placement plate 5 shown in Figure C and the first sliding position of the movable plate 7, the upper surface 3 of the board placement plate 5 and the through hole B of the fixed plate 6, ~B4 and B! and through holes C2 to C of the movable plate body 7
5 and C! A plurality of four melt holding parts F1
~F4 and another melt holding portion Fda are formed, and furthermore, the initial position of the substrate placement plate 5 and the first position of the movable plate 7 shown in FIG. At the sliding position 2, the upper surface 3 of the board placement plate 5 and the through holes B1 to B of the fixed plate 6
4 and Bf and the through holes C1 to C4 of the movable plate body 7 and C! A plurality of four melt retaining parts G1 to G4 and another melt retaining part Gda are formed by working together with the melt retaining part Gda, as shown in FIG. Use parts G1 to G4 and G2
By sliding the board placement plate 5 from the state in which ' is formed, the board placement recess 2 of the board placement plate 5 is formed.
is first brought to the through hole B1 of the fixing plate 6, as shown in FIG.

The first sliding position of the movable plate 7 shown in FIG. 1C and the second sliding position shown in FIGS. 1D and E are such that the movable plate 7 is in the position shown in FIG. The operation lever 9 is sequentially slid in one direction from the initial position shown in FIG. Through hole B,,B2,B! ,B3
The board placement plate 7 slides to be brought under B4.The sliding movement is such that the board placement plate 5 is moved in one direction by the operating lever 9 from the initial position shown in FIGS. 1A-D. It is made so that it can be obtained by sliding it by operating it. The embodiment of the liquid phase epitaxial growth layer forming apparatus used in the liquid phase epitaxial growth layer forming method according to the present invention has been clarified above. An embodiment of the method for forming a liquid phase epitaxial growth layer according to the present invention will be described in detail with reference to FIGS. 2A to 2. First, an apparatus for forming a liquid phase epitaxial growth layer is shown in FIG. As shown, in the same manner as described above in FIG. B4 and B! The melt holding part 1) 1 to D
4 and D da, these melt holding parts D1 to D4 and the required melt holding part in DJ, for example D2.
and D4 contain the required materials R2 and R4, respectively.

In this case, melt holding parts D2 and D of materials R2 and R4
For example, as shown in FIG. 2A, the accommodation in the first
As described above with reference to FIG. This is done through the through holes C2 and C4 of the movable plate 7 while the body 6 is in a sliding position.

In addition, the material R accommodated in the melt holding portion D2 and 11) 4
2 and R4 may be made of GaAs crystal and InAs crystal, and for the sake of simplicity below, such materials R2 and R4 may be made of GaAs crystal.
It is assumed that it is made of As crystal and InAs crystal. Further, a lid 21 is removably disposed within the through hole Bf of the fixed plate 6 forming the melt holding portion Df to close it on the board placement plate 5 side. Next, as shown in FIG. 2B, the apparatus for forming a liquid phase epitaxial growth layer is operated, with the substrate placement plate 5 and the movable plate 7 in the initial position, in the same manner as described in FIG. 1B. The upper surface 10 of the fixed plate body 6 and the through holes C2 to C5 and C! of the movable plate body 7! The melt holding part E1
~E4 and E! , and the plurality 4
Required materials Sl, S2, S3 and S4 are accommodated in the melt holding parts El, E2, E3 and E4, respectively.

In this case, the material S accommodated in the melt holding parts E1 to E4
1 to S4. For the sake of simplicity, materials S1 to S4 are assumed to be made of In and Sn (5).Furthermore, the required melt retaining parts in the melt retaining parts E1 to E4, for example, E2. and materials S2 and S accommodated in E4, respectively.
4 is the melt 12 obtained in the melt holding parts F2 and F4 corresponding to the melt holding parts E2 and E4 in the process described later.
and 14 to obtain the melt level in the through holes C3 and C5 corresponding to the melt retaining parts E2 and E4.

In order to obtain the materials S2 and S4 having such amounts, the through holes C1 to C5 and C! of the movable plate 7 are provided. Although the volume depends on the amount of material accommodated in the melt holding parts D1, D4, and Df, generally the through holes B1 to B1 of the fixed plate 6
It is chosen to be large compared to the volume of B4.

Next, a device for forming a liquid phase epitaxial growth layer is placed in a furnace (not shown), and materials R2 and R2 are placed in the melt retaining portions D2 and D4, respectively, as shown in FIG. 2C. R4 melt H! and H! and melt holding parts El, E2, E3 and E
In order to obtain the melts H, , H2, H3 and H4 of the materials Sl, S2, S3 and S4 to be respectively accommodated in the melts 4, heating is carried out, for example, in a hydrogen atmosphere.

In this case, the heating starts at time T, as shown in FIG. Therefore, up to time T, the temperature T is room temperature T. The temperature rises relatively rapidly from the value of T8 to the high value T8, and then the temperature T reaches the point t1.
Therefore, a temperature program is adopted in which the temperature T8 is maintained until time T2. Next, as described above, the melts H/and H! are stored in the melt holding parts D2 and D4, respectively. However, from the state where the melts H1 to H4 are obtained in the melt holding portions E and E4, as shown in FIG. 2D, the melt holding portions are Parts F1 to F4 and F! The movable plate body 7 is slid to the first sliding position by operating the operating rod 9 so that the melt holding portion F1 is formed.
; F2; F3; and F4, respectively, melt 11 consisting of melt H1; melt 2 consisting of melt H2 and H2; melt 13 consisting of melt H3; and melt H! A melt 4 consisting of H4 and H4 is obtained.

In this case, as shown in FIG. 3, melts 1 to 4 are obtained by taking a temperature T equal to the temperature T8 in the heating step described above from time T2 at the end of the heating step to time T3. Next, as shown in FIG. 2E, cooling is performed in the melt holding parts F1 to F4 in order to obtain crystals J1 to J4 from the melts 1 to 4. Cooling in this case is obtained by taking the liquid phase epitaxial growth layer forming apparatus out of the furnace, but as shown in FIG. Room temperature T from the value of T8. Afterwards, the room temperature T. The temperature program is to maintain the value of . Next, as shown in FIG. 2F, a desired crystal material Ul is placed on each of the crystals J1 to J4 obtained in the melt holding parts F1 to F4, such as crystals J1; , U2, U3, and U4.

Also, at the front and back, the board placement recess 2 of the board placement plate 5
A required substrate 1 is placed inside.゛In this case, the crystal material Ul
, U2 and U4 can be made of InP crystals, and therefore, for the sake of simplicity below, it is assumed that the crystal materials Ul, U2 and U4 are N
It is assumed that the material U1 is made of P crystal, and the material U1 has a sufficient amount to supersaturate the melt K1 described later by a predetermined amount at the value of the temperature T6 described later, and the material U2 has a sufficient amount to supersaturate the melt K1 described later. It has a sufficient amount so as not to completely melt at the value of temperature T4 described later,
Furthermore, the material U4 has a sufficient amount so that it does not completely melt into the melt K4, which will be described later, at a temperature T2, which will be described later. Also crystal material U3
can be made of an InP crystal and Zn, and for the sake of simplicity below, it will be assumed that the crystal material U3 is made of an InP crystal and Zn.
3, the amount is sufficient to reach supersaturation by a predetermined amount at the value of temperature T3, which will be described later. Furthermore, the substrate 1 may be made of InP crystal, and for the sake of simplicity hereinafter, it will be assumed that the substrate 1 is made of an InP crystal plate. Next, a liquid phase epitaxial growth layer forming apparatus is used to deposit crystal materials U1 to U on crystals J and J4 as described above.
4, place it in the furnace again, and then
As shown in the figure, the melt K1:crystal J2 of the crystal J1 and the crystal material U1 is stored in the melt holding parts F,; F2; F3; and F4, respectively.
and melt K2 of crystal material U2: crystal J3 and crystal material U
3 melt K3; and melt K3 of crystal J4 and crystal material U4
Heating is done to obtain 4. In this case, as shown in FIG. 3, the temperature T becomes room temperature T during the period from time T5 after time T4 to time T6, as shown in FIG. Temperature T lower than temperature T8 from the value of
A temperature program is adopted in which the temperature rises relatively rapidly to a value of 5, and then the temperature T is maintained at the temperature T from time T6 to time T7. ，
Obtained as a saturated melt of As and P. It should also be noted that in this case the melts K2 and K4 are taking the melt level in the through holes C3 and C4 with the materials U2 and U4 remaining above them. Next, from the state where the melts K and -K4 are obtained in the melt holding parts F1 to F4 as described above, as shown in FIG. 2H, the same state as described in FIG. In order to form the melt holding parts G1 to G4 and Gf, the movable plate 7 is slid to the second sliding position by operating the operating rod 9, thereby forming the melt holding parts G1 to G4. Melts M1 to M4 are obtained from melts K1 to K4, respectively.

In this case, melts M1 and M3 are made up of all of melts K1 and K3, respectively, but melts M2 and M4 are made up of melts K1 and K3, respectively.
Through holes C3 and C of 2 and K4, inward facing parts K and K
! is cut off by the movable plate 7, and the cut out melt is the melt formed by the parts K' and K of the melts K2 and K4 facing into the through holes B2 and B4. In addition, the part KI of the melt K2 facing into the through hole C3 to obtain the melt M2 is cut off by the movable plate 7, and the part K is inserted into the through hole B forming the melt holding part F2'. A lid body 2 arranged to close this
1, and facing into the through hole C of the melt K4 so as to obtain the melt M4! is cut out by the movable plate 7 K! are the upper surface 10 of the fixed plate 6 and the movable plate 7
The melt retaining portion E! is formed in cooperation with the through hole C5!
located within. Furthermore, melts M1 and M3 are in a state where materials U and U3 are left on them, and part Kf
and K' with materials U2 and U4 left on them, but melts M2 and M4 have materials U2 and U left on them.
There is no condition left with 4 left. Next, melt holding parts G1 to G4
With the melts M1 to M4 obtained in the melt, all of the materials U1 and U3 remaining on the melt M and M3 are dissolved into the melts M1 and M3, respectively, as shown in FIG. The temperature of the furnace is raised as much as possible, and then the temperature of the furnace is lowered.

In this case, as shown in FIG. 3, the temperature of the furnace increases and decreases by increasing the temperature T from the value of temperature T5 at time T7 to the value of temperature T7 at time T8, which is between the temperature T8 and T5. Then, the temperature T is lowered from the value of temperature T7 at time T8 to the value of temperature T6, which is the value between temperatures T7 and T5 at time T, and then from the value of temperature T6 at time T, The temperature T is lowered to a value of temperature T4, which is lower than the value of temperature T, at time T, O, and then the temperature T is lowered to the value of temperature T3, which is lower than the value of temperature T4 at time Tll, than temperature T4 at time T, O. Then, the temperature T is lowered to a value of temperature T2 lower than the value of temperature T3 at time T11 than the value of temperature T3 at time T12, and then the value of temperature T2 at time T12 is lowered to the value of temperature T2 at time T13.
The temperature T is lowered to a value of T, which is lower than the value of temperature T2 at time T1, and finally, the temperature T1 is lowered from the value of temperature T1 at time T13 to the value T2 at time T1.
Room temperature T at l4. The temperature T is lowered to the value of
It uses a temperature program. Then, as shown in FIG. 2J, by operating the operating lever 9, the substrate placement recess 2 of the substrate placement plate 5 is brought under the melt holding portion G1 at time T. Then, by operating the operation lever 9 (not shown) in the same direction, the board placement recess 2 is moved to the point T.
At lO, tll, and Tl2, melt holding parts G2, G
Slide the board 1 in order to bring it under 3 and G4.
The melts Ml, M2, M3 and M4 are sequentially added at time points T9 to Tl.
OTlOゝTll9tllゝTl2) and Tl2ゝTl
Liquid phase epitaxial growth layers Al, A2, A3 and A4 made of melts M1, M2, M3 and M4 are sequentially laminated and formed on the substrate 1 by contacting the layers Al, A2, A3 and A4. After that, by operating the operating lever 9 in the same direction, the time point T
The substrate 1 is separated from the melt M4 at 13, and then the liquid phase epitaxial growth layer forming apparatus is taken out of the furnace, thereby obtaining the temperature program between the above-mentioned times T13 and T4,
Next, the liquid phase epitaxial growth layer A is deposited from the substrate placement recess 2.
The substrate 1 on which layers 1 to A4 are layered is taken out. In this case, the liquid phase epitaxial growth layers A1; A2; A3; and A4 are respectively Sn-doped InP crystal layers; non-doped InP crystal layers;
xGal-XAs,P,-, crystal layer (however, OkuXku1,
0xyku1); Zn-doped InP crystal layer; and Sn-doped Inx'Gal-,'ASy'P1
-y' crystal layer (0 x x' x 1, 0 <y' x 1).

The embodiment of the method for forming a liquid phase epitaxial growth layer according to the present invention has been clarified above, and according to the embodiment,
This involves the process of obtaining melts 1 and 4 as shown in Fig. 2D, and the process of obtaining melts K and -K as shown in Fig. 2G.
4, obtaining melts K1 to K4 as shown in Fig. 2G, and obtaining melts M1 to M4 as shown in Fig. 2G above. , and the substrate 1 is made to sequentially contact the melts M1 to M4 which are not pressed in any way, so that liquid phase epitaxy ν
Since growth layers A1 to A4 are obtained, these growth layers A1 to A4 are obtained.
It is possible to obtain A4 having the desired highly accurate composition and thickness. Incidentally, as seen in the conventional method, the process of obtaining melts 11 to 14 as described above in FIG. 2D, and the step of obtaining melts K1 to K4 as described above in FIG.
Melts M1 to M4 immediately without taking the step of obtaining
If the growth layers A1 to A4 are obtained by bringing the substrate 1 into contact with the melts M1 to M4, then the melts M1 to M4 are Unless the material is weighed with high precision, the growth layers A1 to A
However, according to the method of the present invention, it is possible to obtain growth layers A1 to A4 with a highly accurate composition and thickness without requiring such highly accurate weighing. and thickness. Incidentally, as seen in the conventional method, the melt M1 to which the substrate 1 is pressed
The growth layers A1 to A are successively brought into contact with pigeons.
If 4 is to be obtained successively, the next growth layer will be obtained with the melt for obtaining the growth layer remaining on top of the previous growth layer, and for this reason. Although the growth layers A2 to A4 have smearing that prevents the desired highly accurate composition and thickness from being obtained, the method of the present invention allows the growth layers A2 to A4 to achieve the desired composition and thickness without such distortion. It can be obtained with highly accurate composition and thickness. Although the foregoing has described one example of the method according to the invention, it will be obvious that various modifications and changes may be made without departing from the spirit of the invention.

BRIEF DESCRIPTION OF THE DRAWINGS FIGS. 1A to 1E are sectional views showing an embodiment of a liquid phase epitaxial growth layer forming apparatus that can be used in the method of forming a liquid phase epitaxial growth layer according to the present invention; 2A to 2A-J are line sectional views showing sequential steps for explaining an embodiment of the method for forming a liquid phase epitaxial growth layer according to the present invention, and FIG. 3 is a diagram showing a liquid phase epitaxial growth layer according to the present invention. FIG. 3 is a diagram showing a temperature program used to explain an example of a method for forming .

Claims (1)

[Claims] 1 A plurality of N liquid phase epitaxial growth layers A_1, A_
2... A substrate placement plate slidably arranged on a fixed support plate formed with a substrate placement recess formed on the upper surface side for placement of substrates formed by sequentially stacking A_N. body, and a plurality of N melt holding part forming through holes B_1, B_2...
A plate for forming a fixed melt holding part arranged on the board arrangement plate formed by sequentially forming B_N, and a plurality of (N+1) through holes C_1, C_2, . . . C_N for forming a melt holding part. ,
A plate for forming a movable melt holding part that is slidably arranged on the plate for forming a fixed melt holding part formed by sequentially forming C_N_+_1, the plate for arranging the substrate, and the movable melt holding part. It has an operation lever for sliding the forming plate, and when the board placement plate is in its initial position, the upper surface of the substrate placement plate and the plurality of fixed melt holding portion forming plates are connected to each other. A plurality of N melt holding parts D_1, D_2...D are formed by working together with N melt holding part forming through holes B_1, B_2...B_N.
_N is formed, and in the initial position of the board arrangement plate and the movable melt holding part forming plate, the upper surface of the fixed melt holding part forming plate and the movable melt holding part are A plurality of N melt holding part forming through holes C_2 of the part forming plate body,
In cooperation with C_3...C_N_+_1, a plurality of N melt holding parts E_1, E_2...E_N are formed, and the initial position of the board arrangement plate, the movable melt holding part At the first sliding position of the part forming plate, a plurality of N melt holding part forming through-holes B_1, B_2 of the fixed melt holding part forming plate are formed between the upper surface of the board placement plate and the fixed melt holding part forming plate.・・・
・B_N and a plurality of N melt holding part forming through holes C_2, C_3...C_N_ of the movable melt holding part forming plate body
A plurality of N melt holding parts F_1 by cooperation with +_1,
F_2...F_N are formed, and at the initial position of the board placement plate and the second sliding position of the movable melt holding part forming plate, The upper surface, the plurality N of melt holding part forming through holes B_1, B_2...B_N of the plate for forming the fixed melt holding part, and the plurality N of melt holding part forming plates of the movable melt holding part forming plate. A plurality of N melt holding parts G_1, G_2...G_N are formed by working together with the holding part forming through holes C_1, C_2...C_N, and the plurality of N melt holding parts are formed. Use part G_1, G_
2... By sliding the substrate placement plate from the state in which G_N is formed, the substrate placement recesses of the substrate placement plate become a plurality N of the fixed melt holding portion forming plates. Through-holes B_1, B_2...B for forming melt holding part
The first and second sliding positions of the movable melt holding part forming plate are such that the movable melt holding part forming plate is brought down sequentially from the initial position to the above. This is achieved by sequentially sliding the operating lever in one direction, and the sliding of the board placement plate is such that the board placement plate moves from the initial position to the operating lever. Using a liquid phase epitaxial growth apparatus which is made to slide by an operation in one direction, the plurality of N melt holding parts D_1, D_2...
- A first step of accommodating the required material in each of the plurality of N melt holding parts D_1, D_2...D_N in a state where D_N is formed, and the above-mentioned In a state where a plurality of N melt holding parts E_1, E_2...E_N are formed, the plurality of N melt holding parts E_
A second step of accommodating the required materials in 1, E_2...E_N, respectively, and the plurality of N melt holding parts D_1, D
_2...The melt of the material to be accommodated in each of the required melt holding parts in D_N and the plurality of N melt holding parts E_1
, E_2...E_N contains the melt H_ of the material, respectively.
1. A third step of heating to obtain H_2...H_N, and the plurality of N melt holding parts D_1, D_2...D
The melt of the material to be accommodated in each of the required melt holding parts in _N and the plurality of N melt holding parts E_1, E_2...
・Melts H_1 and H_2 of the materials respectively accommodated in E_N・
...H_N is obtained, the movable melt holding part forming plate body is moved by the first sliding movement in order to form the plurality of N melt holding parts F_1, F_2...F_N. By sliding the plurality of N melts I containing the plurality of N melts H_1, H_2...H_N in the plurality of N melt holding parts F_1, F_2...F_N, respectively.
A fourth step of obtaining the plurality of N melts I_1, I_2...I_N in the plurality of N melt holding parts F_1, F_2...F_N, respectively. A fifth step of cooling to obtain a plurality of N crystals J_1, J_2...J_N, and the above-mentioned plurality of N melt holding parts F_
1. A desired crystal material is placed on each of the plurality of N crystals J_1, J_2...J_N obtained in each of F_2...F_N, and the above-mentioned substrate placement plate is placed. a sixth step of arranging the substrate in the substrate arranging recess of the plurality of N melt holding parts F_1, F_2...
・In F_N, the above-mentioned plurality of N crystals J_1, J_2・
...Multiple N melts K_1, K_2 including J_N melts
... A seventh step of heating to obtain K_N, and the plurality of N melts K_1, K_2...K_N are inside the plurality of N melt holding parts F_1, F_2...F_N. From the respective obtained states, the plurality of N melt holding parts G_
1, G_2...G_N are formed by sliding the movable melt holding part forming plate to the second sliding position, thereby forming the plurality of N melt holding parts G_1, G_2.
...In G_N, the above-mentioned plurality of N melts K_1, K_
2...N plurality of melts M_1, M_2... by K_N
・An eighth step of obtaining M_N, and a state in which the plurality of N melts M_1, M_2...M_N are obtained in the plurality of N melt holding parts G_1, G_2...G_N, respectively. Then, the substrate placement plate is slid so that the substrate placement recesses are successively brought under the plurality of N melt holding parts G_1, G_2...G_N, and By bringing a plurality of N melts M_1, M_2, . A_2...A_N is formed in a ninth step, and in the second step, the plurality of N melt holding parts E_1, E_2...E_
In the fourth step, the materials to be accommodated in each of the required melt holding parts (generally referred to as E_P) in the plurality of N pieces corresponding to the melt holding parts E_P are Melt holding parts in melt holding parts F_1, F_2...F_N (
The melt in the plurality of N melts I_1, I_2...I_N (generally referred to as I_P) obtained in the plurality of N melts I_1, I_2...I_N (generally referred to as I_P) is used to correspond to the melt holding part E_P. The above-mentioned through holes C_2, C_3 for forming the melt holding part...
・The amount is sufficient to obtain the melt level in the through hole for forming the melt holding part in C_N_+_1 (this is generally referred to as C_P_+_1), and in the sixth step, the plurality of N pieces are The above-mentioned plurality of N crystals J_1, J_2...J obtained in the melt holding parts F_1, F_2...F_N, respectively
The required crystals in _N are the plurality of N melt holding parts F_1, F_2...F_ corresponding to the melt holding part E.
The above-mentioned plurality of N crystals J_1, J_2... obtained in the melt holding part (generally referred to as F_P) in N
It consists of crystals in J_N (generally referred to as J_P),
A plurality of N melts K_1, K obtained in the seventh step
_2... A melt containing the melt of the crystal J_P in K_N (generally referred to as K_P) is obtained with the crystal I_P remaining on the melt K_P, and is subjected to the eighth step. The above-mentioned plurality of N melts M_1, M_2・
...The melt M of the melt K_P in M_N is applied to the portion of the melt K_P obtained in the seventh step facing into the through hole C_P_+_1 for forming the melt holding portion and the seventh
The portion of the crystal J_P remaining on the melt K_P in the process of is cut off by sliding the movable melt holding part forming plate to the second sliding position and becomes the melt. Characteristic method for forming liquid phase epitaxial growth layers.