JPS5933241B2 - Glaze resistance material - Google Patents
Glaze resistance materialInfo
- Publication number
- JPS5933241B2 JPS5933241B2 JP54146901A JP14690179A JPS5933241B2 JP S5933241 B2 JPS5933241 B2 JP S5933241B2 JP 54146901 A JP54146901 A JP 54146901A JP 14690179 A JP14690179 A JP 14690179A JP S5933241 B2 JPS5933241 B2 JP S5933241B2
- Authority
- JP
- Japan
- Prior art keywords
- resistance
- silicide
- glaze
- resistor
- resistance material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000463 material Substances 0.000 title claims description 15
- 229910021332 silicide Inorganic materials 0.000 claims description 16
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 14
- 239000004020 conductor Substances 0.000 claims description 11
- 239000011521 glass Substances 0.000 claims description 7
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 claims description 6
- 229910001930 tungsten oxide Inorganic materials 0.000 claims description 6
- QXYJCZRRLLQGCR-UHFFFAOYSA-N dioxomolybdenum Chemical compound O=[Mo]=O QXYJCZRRLLQGCR-UHFFFAOYSA-N 0.000 claims description 5
- YXTPWUNVHCYOSP-UHFFFAOYSA-N bis($l^{2}-silanylidene)molybdenum Chemical compound [Si]=[Mo]=[Si] YXTPWUNVHCYOSP-UHFFFAOYSA-N 0.000 claims description 3
- 229910021344 molybdenum silicide Inorganic materials 0.000 claims description 3
- 229910052715 tantalum Inorganic materials 0.000 claims description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 3
- 229910021338 magnesium silicide Inorganic materials 0.000 claims 1
- YTHCQFKNFVSQBC-UHFFFAOYSA-N magnesium silicide Chemical compound [Mg]=[Si]=[Mg] YTHCQFKNFVSQBC-UHFFFAOYSA-N 0.000 claims 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 11
- 239000000758 substrate Substances 0.000 description 10
- 239000011230 binding agent Substances 0.000 description 9
- 238000010304 firing Methods 0.000 description 8
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 6
- 229910000476 molybdenum oxide Inorganic materials 0.000 description 5
- JKQOBWVOAYFWKG-UHFFFAOYSA-N molybdenum trioxide Inorganic materials O=[Mo](=O)=O JKQOBWVOAYFWKG-UHFFFAOYSA-N 0.000 description 5
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 229910052750 molybdenum Inorganic materials 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000001856 Ethyl cellulose Substances 0.000 description 1
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 1
- 239000001293 FEMA 3089 Substances 0.000 description 1
- 229910020968 MoSi2 Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910004217 TaSi2 Inorganic materials 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- 229920001249 ethyl cellulose Polymers 0.000 description 1
- 235000019325 ethyl cellulose Nutrition 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000004898 kneading Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Landscapes
- Non-Adjustable Resistors (AREA)
Description
【発明の詳細な説明】
本発明はグレーズ抵抗材料にかかり、配線電極屑も同時
に焼成して得られるメタライズアルミナ基板上に設ける
ことのできるグレーズ抵抗材料を提供しようとするもの
である。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a glaze resistance material, and an object thereof is to provide a glaze resistance material that can be provided on a metallized alumina substrate obtained by simultaneously firing wiring electrode waste.
電極を形成したアルミナ基板上に設ける抵抗材料として
、Rub、、とガラス成分からなるRuO2グレーズ抵
抗体が広く実用に供されている。As a resistance material provided on an alumina substrate on which electrodes are formed, RuO2 glaze resistors made of Rub and glass components are widely used in practical use.
このグレーズ抵抗体は、焼結アルミナ基板上に、銀ある
いは銀とパラジウムからなる電極を空気中で焼付けた上
で、空気中750〜900℃の温度で焼成して設けるも
のであるが、タングステン(W)6るいはモリブデン(
MO)を電極としてアルミナの焼結と同時に形成された
配線付きのアルミナ基板(メタライズアルミナ基板)上
に設けることはできない。This glazed resistor is prepared by baking an electrode made of silver or silver and palladium in air on a sintered alumina substrate, and then baking it in air at a temperature of 750 to 900°C. W) 6 or molybdenum (
MO) cannot be used as an electrode on an alumina substrate (metallized alumina substrate) with wiring formed at the same time as the sintering of alumina.
WおよびMOは酸化雰囲気に弱く、抵抗焼成時の雰囲気
中の酸素分圧を低くしておかなければならない。W and MO are sensitive to oxidizing atmospheres, and the oxygen partial pressure in the atmosphere during resistance firing must be kept low.
ところが、抵抗材料の主成分でろるRuO□はグリーン
ガスのように酸素分圧を低くした雰囲気中での焼成によ
って容易に還元されRu金属となり、抵抗としての性質
をまったく失ってしまう。However, RuO□, which is the main component of the resistor material, is easily reduced to Ru metal by firing in an atmosphere with a low oxygen partial pressure, such as green gas, and loses its properties as a resistor.
したがって、メタライズアルミナ基板に形成できる抵抗
材料としては、熱力学的に安定な成分、換言すれば、水
素雰囲気中でも酸化還元の起こらない成分からなるもの
でなければならない。Therefore, the resistance material that can be formed on the metallized alumina substrate must be composed of thermodynamically stable components, in other words, components that do not undergo redox even in a hydrogen atmosphere.
一方、珪化物とガラスからなる珪化物グレーズ抵抗材料
は空気中で焼成が可能であると同時に。On the other hand, silicide glaze resistance materials consisting of silicide and glass can be fired in air and at the same time.
珪化物の性質上、還元雰囲気においても化学変化を受け
ることなく安定であるため、還元雰囲気中でも焼成が可
能である。Due to the nature of silicide, it is stable even in a reducing atmosphere without undergoing any chemical changes, so it can be fired even in a reducing atmosphere.
ところが、グレーズ抵抗材料は、一般に、導体成分、ガ
ラス成分の他に、印刷膜を形成する目的で適量の結合剤
を溶媒とともに加え、それを混練してペースト状にした
ものでめる。However, glaze resistance materials are generally made by adding, in addition to conductor components and glass components, an appropriate amount of a binder together with a solvent for the purpose of forming a printed film, and kneading the mixture into a paste.
このように、結合剤として有機バインダーを含む印刷膜
を還元雰囲気で焼成した場合、有機バインダーの多くは
熱分解によって飛散するものの、一部は炭化され、抵抗
膜中に炭素として最後まで残り、抵抗体としての緒特性
の多大の悪影響を与える。In this way, when a printed film containing an organic binder as a binder is fired in a reducing atmosphere, most of the organic binder scatters due to thermal decomposition, but some of it is carbonized and remains as carbon in the resistive film, increasing the resistance. It has a great negative effect on the physical characteristics of the body.
したがって、メタライズ基板上に。グレーズ抵抗体を設
けようとするときには、抵抗ペースト中の有機バインダ
ーの除去をいかに完全に行なわせるかということが大き
な課題として残されていた。Therefore, on the metallized substrate. When attempting to provide a glazed resistor, a major problem remained is how to completely remove the organic binder from the resistor paste.
一つの方法として、バインダーは比較的低温度で分解、
燃焼するので、抵抗焼成工程の前段階で雰囲気を酸化性
に保ち、(たとえば空気)、バインダーを充分燃焼させ
てから還元雰囲気にもどして抵抗形成をはかることが考
えられる。One method is to decompose the binder at a relatively low temperature.
Since the binder burns, it is conceivable to keep the atmosphere oxidizing (for example, air) before the resistance firing process, to sufficiently burn the binder, and then return it to a reducing atmosphere to form the resistance.
しかし、たとえこの脱バインダ一工程の温度が低いとし
ても、電極表面の酸化は避けられず、この方法は好まし
くない。However, even if the temperature in this binder removal step is low, oxidation of the electrode surface is unavoidable, and this method is not preferred.
以上説明して来た理由から、還元雰囲気中焼成によるグ
レーズ抵抗体の形成が不可能なもの、たとえばメタライ
ズアルミナ基板にグレーズ抵抗体を設けた回路基板が実
用に供されていないのが実情である。For the reasons explained above, the reality is that circuit boards for which it is impossible to form a glazed resistor by firing in a reducing atmosphere, such as circuit boards in which a glazed resistor is provided on a metallized alumina substrate, are not put into practical use. .
本発明は、抵抗焼成が還元雰囲気中で行なわれても、優
れた抵抗特性を有するグレーズ抵抗材料を提供すること
によって、グレーズ抵抗体を有するメタライズアルミナ
回路基板を実現したものである。The present invention realizes a metallized alumina circuit board having a glazed resistor by providing a glazed resistive material that has excellent resistance characteristics even when resistive firing is performed in a reducing atmosphere.
その特徴とするところは、珪化物系グレーズ抵抗体の導
体成分として珪化モリブデンや珪化タンタルといった珪
化物のほかに酸化モリブデンもしくは酸化タングステン
の少なくともいずれか一方を0.1〜10モルチ含ませ
ることにある。Its characteristic feature is that it contains 0.1 to 10 mole of at least one of molybdenum oxide or tungsten oxide in addition to silicides such as molybdenum silicide and tantalum silicide as a conductor component of the silicide-based glazed resistor. .
以下実施例および比較例に基づいて詳細に説明する。A detailed explanation will be given below based on Examples and Comparative Examples.
〔実施例 1〕
MoSi2とTaSi2のモル比が3=1の組成を有す
る珪化物を真空中において1400℃の温度で合成し、
これにM2O3およびWO2をそれぞれ0.1〜10モ
ル係加え、メタノール中で平均粒径的2μまで粉砕し、
乾燥して、導体材料を得た。[Example 1] A silicide having a composition with a mole ratio of MoSi2 and TaSi2 of 3=1 was synthesized in vacuum at a temperature of 1400°C,
Add 0.1 to 10 mol of M2O3 and WO2 to this, grind in methanol to an average particle size of 2μ,
It was dried to obtain a conductive material.
これに、Bad、B2O3,MgO,Cab、5i02
からなるガラスフリットを、導体材料との合計量に対し
て50〜94重量係力日え、グレーズ抵抗粉末とし、エ
チルセルロースを10係溶解したテレピン油をビークル
として加えて混練し、グレーズ抵抗ペーストとした。In addition, Bad, B2O3, MgO, Cab, 5i02
A glass frit consisting of a glass frit having a weight coefficient of 50 to 94 days relative to the total amount of the conductor material was made into a glaze resistance powder, and turpentine oil in which 10 parts of ethyl cellulose was dissolved was added as a vehicle and kneaded to make a glaze resistance paste. .
このグレーズ抵抗ペーストなWあるいはMoからなる電
極付きのアルミナ基板上に印刷し、120℃、10分間
乾燥した後、最高温度が850℃で試料の最高温度通過
時間を10分間の条件の水素雰囲気トンネル炉で焼成し
た。This glaze resistance paste was printed on an alumina substrate with electrodes made of W or Mo, and after drying at 120°C for 10 minutes, a hydrogen atmosphere tunnel was created in which the maximum temperature was 850°C and the sample passed through the maximum temperature for 10 minutes. Fired in a furnace.
このようにして得られたグレーズ抵抗体について、アス
ペクト比を変えて調べた結果、電極とのマツチングがき
わめてよく、また抵抗の耐湿特性は温度70℃、相対湿
度95係中1000時間放置後の抵抗変化率は±2係以
内であった。As a result of examining the thus obtained glazed resistor by changing the aspect ratio, it was found that the matching with the electrode was extremely good, and the moisture resistance of the resistor was as follows: The rate of change was within ±2 coefficients.
第1表に、これらのグレーズ抵抗体の面積抵抗値R。Table 1 shows the area resistance values R of these glazed resistors.
(mΩ/口)、20℃と125℃での抵抗値測定による
温度変化率TCR(ppm)、ノイズ(dB)、および
短時間負荷特性として500 (mW/mlt )を5
秒間印加した後の抵抗変化率ΔR/R(%)を示した。(mΩ/mouth), temperature change rate TCR (ppm) by resistance value measurement at 20°C and 125°C, noise (dB), and 500 (mW/mlt) as short-term load characteristics.
The resistance change rate ΔR/R (%) after application for seconds is shown.
〔実施例 2〕
Mo S 12 t T a S i2およびMg2
Si のモル比が3:i:iの組成を有する珪化物を
真空中1200℃で合成し、これにMoO2およびWO
3をそれぞ※※れ0.1〜10モル係加え、メタノール
中で平均粒径が約2μまで粉砕し乾燥して導電材料を得
た。[Example 2] Mo S 12 t T a S i2 and Mg2
A silicide with a Si molar ratio of 3:i:i was synthesized at 1200°C in vacuo, and then MoO2 and WO
A conductive material was obtained by adding 0.1 to 10 moles of each of 3 to the mixture, pulverizing the mixture in methanol to an average particle size of about 2 μm, and drying.
以下、実施例1と同様の手順でグレーズ抵抗体を作った
。A glazed resistor was produced in the same manner as in Example 1.
その緒特性を第2表に示す。〔比較例〕
本発明の効果を明らかにするために実施例1゜2におい
て、MoO2,WO3のいずれも含まないイな導体材料
をそれぞれの実施例と同じ条件で得、同様の手順でグレ
ーズ抵抗体を作った。Its initial characteristics are shown in Table 2. [Comparative Example] In order to clarify the effects of the present invention, in Examples 1 and 2, a conductive material containing neither MoO2 nor WO3 was obtained under the same conditions as in each Example, and a glaze resistor was prepared using the same procedure. I made a body.
それぞれの代表的特性を第3表に示した。Typical characteristics of each are shown in Table 3.
第1表および第2表から、本発明によるMo S i
2−TaSi 2−MeO2(Me=Mo、W)系珪化
物グレーズ抵抗体は水素雰囲気焼成で数10Ω〜5にΩ
/口の範囲で、また、MoS i2− TaSi2−M
g2 S i −MoO3(Me =Mo p W )
系珪化物グレーズ抵抗体は中抵抗域で好ましい抵抗特性
を示すことがわかる。From Tables 1 and 2, it can be seen that Mo Si according to the present invention
2-TaSi 2-MeO2 (Me=Mo, W) based silicide glaze resistor has a resistance of several tens of ohms to 5 ohms when fired in a hydrogen atmosphere.
/mouth range, also MoS i2- TaSi2-M
g2 S i −MoO3 (Me = Mo p W )
It can be seen that the silicide-based glaze resistor exhibits favorable resistance characteristics in the medium resistance range.
これらの優れた抵抗特性は、導体材料中に酸化モリブデ
ン、酸化タングステンを加えることによってはじめて得
られることが、比較例を示す第3表かられかる。Table 3 showing comparative examples shows that these excellent resistance characteristics can only be obtained by adding molybdenum oxide and tungsten oxide to the conductor material.
これは、あらかじめ含ませておいた酸化モリブデン、酸
化タングステンが、還元雰囲気中でグレーズ内部に取り
残された炭素によって、
3C+Me03−+3CO+Me
の反応(Me=Mo、W)で酸化されるために空気中と
同等の特性が得られるものと考えられる。This is because the molybdenum oxide and tungsten oxide that have been added in advance are oxidized by the carbon left inside the glaze in a reducing atmosphere through a reaction of 3C+Me03-+3CO+Me (Me=Mo, W). It is considered that equivalent characteristics can be obtained.
したがって、抵抗ペーストに含まれている樹脂量、焼成
温度によっても異なるが、酸化モリブデン、酸化タング
ステンが少量であればCの燃焼が不充分となり、逆に多
過ぎれば珪化物導体抵抗値やガラスの流動性に悪影響を
及ぼし、いずれの場合も諸抵抗特性が低下する。Therefore, although it varies depending on the amount of resin contained in the resistance paste and the firing temperature, if molybdenum oxide or tungsten oxide is small, the combustion of C will be insufficient, and if it is too large, the resistance value of the silicide conductor and the glass Flowability is adversely affected and resistance properties are reduced in both cases.
図にMoO3量と抵抗特性の中でもより効果の明白な短
時間負荷特性との関係の代表例を示す。The figure shows a typical example of the relationship between the amount of MoO3 and the short-time load characteristic, which is the most effective among resistance characteristics.
以上説明したように、本発明は、珪化物系グレーズ抵抗
材料に酸化モリブデンまたは酸化タングステンの少なく
ともいずれか一方を含ませておくことによって、還元雰
囲気焼成で優れた特性を有スルグレーズ抵抗体を有する
メタライズアルミナ基板を作製することができるもので
ある。As explained above, the present invention provides a metalized glaze resistor having excellent properties in reducing atmosphere firing by containing at least one of molybdenum oxide and tungsten oxide in a silicide-based glaze resistor material. It is possible to produce an alumina substrate.
図面は本発明のグレーズ抵抗材料におけるMoO3量と
短時間負荷特性との代表的な関係を示す。The drawing shows a typical relationship between the amount of MoO3 and the short-term load characteristics in the glaze resistance material of the present invention.
Claims (1)
くとも珪化モリブデンならびに珪化タンタルからなる珪
化物のほかに、酸化モリブデン(MoO2)もしくは酸
化タングステン(WO,)またはその両方を0.1〜1
0モル係含むことを特徴とするグレーズ抵抗材料。 2 珪化物が珪化モリブデン、珪化タンタル、および珪
化マグネシウムからなることを特徴とする特許請求の範
囲第1項に記載のグレーズ抵抗材料。[Scope of Claims] 1. The conductive material is composed of a conductive material and glass, and the conductive material is composed of at least silicides consisting of molybdenum silicide and tantalum silicide, as well as molybdenum oxide (MoO2), tungsten oxide (WO,), or both. .1~1
A glaze resistance material characterized in that it contains 0 molar coefficient. 2. The glaze resistance material according to claim 1, wherein the silicide is composed of molybdenum silicide, tantalum silicide, and magnesium silicide.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP54146901A JPS5933241B2 (en) | 1979-11-12 | 1979-11-12 | Glaze resistance material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP54146901A JPS5933241B2 (en) | 1979-11-12 | 1979-11-12 | Glaze resistance material |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5669802A JPS5669802A (en) | 1981-06-11 |
| JPS5933241B2 true JPS5933241B2 (en) | 1984-08-14 |
Family
ID=15418124
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP54146901A Expired JPS5933241B2 (en) | 1979-11-12 | 1979-11-12 | Glaze resistance material |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5933241B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2532429B2 (en) * | 1987-01-20 | 1996-09-11 | 松下電器産業株式会社 | Glaze resistance material |
| US7659220B1 (en) * | 2008-12-03 | 2010-02-09 | Osram Sylvania Inc. | Sealing composition for sealing aluminum nitride and aluminum oxynitride ceramics |
-
1979
- 1979-11-12 JP JP54146901A patent/JPS5933241B2/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5669802A (en) | 1981-06-11 |
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