JPS5939808B2 - Magnetic memory and its manufacturing method - Google Patents
Magnetic memory and its manufacturing methodInfo
- Publication number
- JPS5939808B2 JPS5939808B2 JP1438577A JP1438577A JPS5939808B2 JP S5939808 B2 JPS5939808 B2 JP S5939808B2 JP 1438577 A JP1438577 A JP 1438577A JP 1438577 A JP1438577 A JP 1438577A JP S5939808 B2 JPS5939808 B2 JP S5939808B2
- Authority
- JP
- Japan
- Prior art keywords
- magnetic
- coupling agent
- magnetic memory
- polysilicate
- coated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 229910052804 chromium Inorganic materials 0.000 claims description 26
- 239000011651 chromium Substances 0.000 claims description 26
- 229910052751 metal Inorganic materials 0.000 claims description 26
- 239000002184 metal Substances 0.000 claims description 26
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical group [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 25
- 239000010408 film Substances 0.000 claims description 25
- 239000006087 Silane Coupling Agent Substances 0.000 claims description 23
- 239000007822 coupling agent Substances 0.000 claims description 23
- 238000000034 method Methods 0.000 claims description 22
- 239000010409 thin film Substances 0.000 claims description 22
- 239000011253 protective coating Substances 0.000 claims description 20
- 230000001681 protective effect Effects 0.000 claims description 14
- 239000000126 substance Substances 0.000 claims description 8
- 239000000203 mixture Substances 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 6
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 239000010410 layer Substances 0.000 claims 7
- 239000003795 chemical substances by application Substances 0.000 claims 4
- 238000002203 pretreatment Methods 0.000 claims 2
- ODIGIKRIUKFKHP-UHFFFAOYSA-N (n-propan-2-yloxycarbonylanilino) acetate Chemical compound CC(C)OC(=O)N(OC(C)=O)C1=CC=CC=C1 ODIGIKRIUKFKHP-UHFFFAOYSA-N 0.000 claims 1
- 238000006116 polymerization reaction Methods 0.000 claims 1
- 239000011241 protective layer Substances 0.000 claims 1
- 210000003128 head Anatomy 0.000 description 36
- 238000003860 storage Methods 0.000 description 25
- 239000000243 solution Substances 0.000 description 11
- 230000000052 comparative effect Effects 0.000 description 10
- 239000002253 acid Substances 0.000 description 9
- 229910045601 alloy Inorganic materials 0.000 description 9
- 239000000956 alloy Substances 0.000 description 9
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 6
- 239000007788 liquid Substances 0.000 description 6
- 238000000576 coating method Methods 0.000 description 4
- 229910000939 field's metal Inorganic materials 0.000 description 4
- IGOJDKCIHXGPTI-UHFFFAOYSA-N [P].[Co].[Ni] Chemical compound [P].[Co].[Ni] IGOJDKCIHXGPTI-UHFFFAOYSA-N 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 239000000428 dust Substances 0.000 description 3
- 229910001004 magnetic alloy Inorganic materials 0.000 description 3
- WYTZZXDRDKSJID-UHFFFAOYSA-N (3-aminopropyl)triethoxysilane Chemical compound CCO[Si](OCC)(OCC)CCCN WYTZZXDRDKSJID-UHFFFAOYSA-N 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 238000005299 abrasion Methods 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- 125000000524 functional group Chemical group 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- 229910018104 Ni-P Inorganic materials 0.000 description 1
- 229910018536 Ni—P Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000007983 Tris buffer Substances 0.000 description 1
- PEQYWQJRQVAUAZ-UHFFFAOYSA-L [Cr](=O)(=O)(Cl)Cl.C(C(=C)C)(=O)O Chemical compound [Cr](=O)(=O)(Cl)Cl.C(C(=C)C)(=O)O PEQYWQJRQVAUAZ-UHFFFAOYSA-L 0.000 description 1
- 230000001476 alcoholic effect Effects 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000005461 lubrication Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 125000005395 methacrylic acid group Chemical group 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- OFNHPGDEEMZPFG-UHFFFAOYSA-N phosphanylidynenickel Chemical compound [P].[Ni] OFNHPGDEEMZPFG-UHFFFAOYSA-N 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 210000001747 pupil Anatomy 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- GQIUQDDJKHLHTB-UHFFFAOYSA-N trichloro(ethenyl)silane Chemical compound Cl[Si](Cl)(Cl)C=C GQIUQDDJKHLHTB-UHFFFAOYSA-N 0.000 description 1
- BPSIOYPQMFLKFR-UHFFFAOYSA-N trimethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](OC)(OC)CCCOCC1CO1 BPSIOYPQMFLKFR-UHFFFAOYSA-N 0.000 description 1
- 239000005050 vinyl trichlorosilane Substances 0.000 description 1
Landscapes
- Manufacturing Of Magnetic Record Carriers (AREA)
- Magnetic Record Carriers (AREA)
Description
【発明の詳細な説明】
本発明は磁気的記憶装置(磁気ディスク装置および磁気
ドラム装置等)に用いられる磁気記憶体に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a magnetic storage body used in a magnetic storage device (magnetic disk device, magnetic drum device, etc.).
一般に記録再生磁気ヘッド(以下ヘッドと呼ぶ)と磁気
記憶体とを構成部とする磁気記憶装置の記録再生方法に
は大別して次のような二種類の方法がある。In general, there are two types of recording/reproducing methods for a magnetic storage device that includes a recording/reproducing magnetic head (hereinafter referred to as a head) and a magnetic storage body, as follows.
第一の方法は操作開始時にヘッドと磁気記憶体面とを接
触状態でセットした後、前記磁気記憶体に所要の回転を
与えることにより前記ヘッドと前記磁気記憶体面との間
に空気層分の空間を作り、この状態で記録再生をする方
法である。この方法では、操作終了時に磁気記憶体の回
転が止まり、この時ヘッドと磁気記憶体面は操作開始時
と同様に接触摩擦状態にある。第二の方法は磁気記憶体
に予め所要の回転を与えておき、急激にヘッドを磁気記
憶体面上に押しつけることにより前記ヘツドと前記磁気
記憶体面との間に空気層分の空間をつくり、この状態で
記録再生する方法である。このように第一の方法では操
作開始時および終了時にヘツドと磁気記憶体面は接触摩
擦状態にあり、第二の方法ではヘツドを磁気記憾体面に
押しつける際に接触摩擦状態にある。これらの接触摩擦
状態におけるヘツドと磁気記憶体の間に生じる摩擦力は
、ヘツドおよび磁気記憶体を摩耗させついにはヘツドお
よび金属磁曲薄膜媒体に傷を生ぜしめることがある。ま
た前記接触摩擦状態においてヘツドのわずかな姿勢の変
化かへツドにか\る荷重を不均一にさせヘツドおよび磁
気記憶体表面に傷を作ることもある。また更に記録再生
中に突発的にヘツドが磁気記憶体に接触しヘツドと磁気
記憶体間に大きな摩擦力が働き、ヘツドおよび磁気記憶
体が破壊されることがしばしぱ起こる。The first method is to set the head and the magnetic storage surface in contact at the start of operation, and then apply a required rotation to the magnetic storage to create an air space between the head and the magnetic storage surface. This is a method for recording and playing in this state. In this method, the rotation of the magnetic storage body stops at the end of the operation, and at this time the head and the surface of the magnetic storage body are in the same frictional state as at the start of the operation. The second method is to apply a required rotation to the magnetic storage body in advance, and then suddenly press the head onto the magnetic storage body surface to create a space equivalent to an air layer between the head and the magnetic storage body surface. This is a method of recording and playing back in the current state. Thus, in the first method, the head and the magnetic storage surface are in a frictional contact state at the beginning and end of the operation, and in the second method, the head and the magnetic storage surface are in a contact frictional state when the head is pressed against the magnetic storage surface. The frictional force generated between the head and the magnetic memory under these contact friction conditions can wear out the head and the magnetic memory and eventually cause damage to the head and the metal magnetic thin film medium. Furthermore, in the contact friction state, a slight change in the posture of the head may cause the load on the head to become uneven, causing scratches on the surface of the head and the magnetic storage body. Furthermore, during recording and reproduction, the head suddenly comes into contact with the magnetic storage body, and a large frictional force acts between the head and the magnetic storage body, which often causes the head and the magnetic storage body to be destroyed.
この様なヘツドと磁気記憶体との接触摩擦、接触摩耗お
よび接触破壊からヘツドおよび磁気記憶体を保護するた
めに磁気記憶体の表面に保護被膜を被覆することが必要
である。従来から保護被膜として金属めつき膜(例えば
Cr,Rh,Ni−P等)を被覆する方法あるいは金属
磁囲薄膜媒体の表面を酸化して酸化物を形成させて保護
被膜とする方法などがあるがいずれも上記の接触摩擦現
象に対して有力な手段とはならない。本発明者はすでに
これらの欠点をなくしたポリ珪酸からなる保護被膜を提
案している←特願昭50−81201)。このポリ珪酸
からなる保護被膜はヘツドと磁気記憶体の接触摩擦に十
分耐え、またヘツドの突発的な磁気記憶体への接触に十
分耐え、さらにまた高温高湿状態においても前記金属磁
曲薄膜を十分保護し、磁気記憶体を含む下地金属体の磁
気特曲を損なわないなど保護被膜としては十分なF!+
.態を有している。In order to protect the head and the magnetic memory from such contact friction, contact wear and contact breakage between the head and the magnetic memory, it is necessary to coat the surface of the magnetic memory with a protective coating. Conventionally, there is a method of coating a metal plated film (for example, Cr, Rh, Ni-P, etc.) as a protective film, or a method of forming an oxide by oxidizing the surface of a metal magnetic thin film medium to form a protective film. However, none of these methods is effective against the above-mentioned contact friction phenomenon. The present inventor has already proposed a protective coating made of polysilicic acid that eliminates these drawbacks (Japanese Patent Application No. 81201/1983). This protective film made of polysilicate sufficiently withstands the contact friction between the head and the magnetic memory, and also withstands sudden contact of the head with the magnetic memory, and also protects the metal magnetic thin film even under high temperature and high humidity conditions. The F! +
.. It has a state of
ところがヘッドによつてはヘツドと磁気記憶体の間にご
みを引き込み易くそのごみが研磨剤の働きをしてヘツド
および磁気記憶体を摩耗し、その摩耗によつて生じた摩
耗粉がさらにヘツドおよび磁気記憶体を摩耗させるもの
がある。However, depending on the head, it is easy to draw dust between the head and the magnetic memory, and the dust acts as an abrasive and wears down the head and the magnetic memory, and the abrasion powder generated by this abrasion further damages the head and the magnetic memory. There are some things that wear out magnetic memory.
このような現象は前部にテーパのついたヘツドにおいて
著しい。本発明の目的は上述のごみを引き込み易いヘツ
ドによつても十分に金属磁囲薄膜媒体を保護する保護被
膜を有する磁気記憶体およびその製造方法を提供するこ
とにある。This phenomenon is more pronounced in heads with a tapered front. SUMMARY OF THE INVENTION An object of the present invention is to provide a magnetic memory having a protective coating that sufficiently protects a metal magnetic thin film medium even from the above-mentioned heads that tend to attract dust, and a method for manufacturing the same.
この発明の磁気記憶体は鏡面研磨された非磁団円盤状基
体上に金属磁囲薄膜媒体が被覆され、この金属磁囲薄膜
媒体上にシランカツプリング剤またはクロム系カップリ
ング剤等からなる前処理層が被覆され、その上にシラン
カツプリング剤もしくはクロム系カツプリング剤を含む
または含まないポリ珪酸保護被膜が被覆されて構成され
ている。In the magnetic memory of the present invention, a mirror-polished non-magnetic disc-shaped substrate is coated with a metal magnetic thin film medium, and a silane coupling agent or a chromium-based coupling agent is coated on the metal magnetic thin film medium. A treatment layer is coated, and a polysilicate protective coating containing or not containing a silane coupling agent or a chromium-based coupling agent is coated thereon.
本発明の磁気記瞳体の製造方法においては、鏡面研磨さ
れた非磁曲円盤状基体上に金属磁曲薄膜媒体を被覆し、
さらにこの上にシランカツプリング剤またはクロム系カ
ツプリング剤等のアルコール爵液または水溶液を塗布し
、乾際して前処理層を形成させる。この様な前処理を行
なつた後、この上に重合してポリ珪酸被膜を形成し得る
物質を含む溶液を塗布した後、全体を常温以tかつ前記
金属磁曲薄膜媒体の磁気的曲質の変化が記録および再生
に影響を与えない温度で焼成することによりポリ珪酸保
護被膜を形成させて磁気記憶体を製造する。この場合、
重合してポリ珪酸被膜を形成し得る物質としてはテトラ
アルコキシシラン,テトラヒドロキシシランもしくはこ
れらの混合物またはシリコンアンレート等が挙げられ、
これらはアルコール溶液等の状態で使用する。In the method for manufacturing a magnetic pupil of the present invention, a metal magnetic thin film medium is coated on a mirror-polished non-magnetic disc-shaped substrate;
Furthermore, an alcohol solution or aqueous solution of a silane coupling agent or a chromium-based coupling agent is applied thereon and dried to form a pretreatment layer. After performing such pretreatment, a solution containing a substance that can be polymerized to form a polysilicate film is applied thereon, and then the whole is heated to room temperature and the magnetic curvature of the metal magnetic thin film medium is heated. A magnetic memory body is manufactured by forming a polysilicate protective coating by firing at a temperature at which changes in the temperature do not affect recording and reproduction. in this case,
Examples of substances that can be polymerized to form a polysilicic acid film include tetraalkoxysilane, tetrahydroxysilane, a mixture thereof, silicon anlate, etc.
These are used in the form of an alcohol solution or the like.
またこの溶液にはシランカツプリング剤またはクロム系
カップリング剤を含ませることがある。次に図面を参照
して本発明を詳細に説明する。The solution may also contain a silane coupling agent or a chromium-based coupling agent. Next, the present invention will be explained in detail with reference to the drawings.
図はこの発明の磁気記憶体の一実施例を示す断面図であ
る。図において本発明の磁気記憶体6は合金円盤1とそ
の上に被覆された非磁肚合金層2とで構成される非磁囲
円盤状基体と、この非磁曲合金層2の研磨面上に被覆さ
れた金属磁囲薄膜媒体3と、この金属磁曲薄膜媒体3上
にシランカツプリング剤またはクロム系カツプリング剤
からなる前処理層4とその上に形成されたポリ珪酸また
はシランカツプリング剤もしくはクロム系カツプリング
剤を含んだポリ珪酸からなる保護被膜5から構成されて
いる。合金円盤1は十分小さなうねりを持つた面に仕上
げられていなければならない(円周方向で50μm以丁
および半径方向で100μm以下)。The figure is a cross-sectional view showing one embodiment of the magnetic storage body of the present invention. In the figure, the magnetic storage body 6 of the present invention includes a non-magnetic disc-shaped base body composed of an alloy disc 1 and a non-magnetic alloy layer 2 coated thereon, and a polished surface of the non-magnetic alloy layer 2. a pretreatment layer 4 made of a silane coupling agent or a chromium-based coupling agent on the metal magnetic thin film medium 3, and a polysilicate or silane coupling agent formed thereon. Alternatively, it is composed of a protective coating 5 made of polysilicic acid containing a chromium-based coupling agent. The alloy disk 1 must have a surface with sufficiently small waviness (50 μm or less in the circumferential direction and 100 μm or less in the radial direction).
これはうねりが大きいと記録および再生時に磁気記憶体
上に浮揚しているヘツドが磁気記憶体面の上下の動きに
追従できずにヘツドと磁気記憶体間の距離が変化し記録
再生特囲が変化するからである。この合金円盤1の上に
めつきにより被覆された非磁囲合金層は機械的研磨によ
り表面粗さ0,04μm以下に鏡面仕上げされている。
なお、合金円盤1に鏡面研磨が可能な金属を用いれば非
磁囲合金層2は不用となる。非磁囲合金層2の上に高密
度記録用の金属磁曲薄膜媒体3がめつきにより被覆され
ている。この金属磁囲薄膜媒体3をヘツドの接触または
湿気や温度による変化から十分に保護する保護被膜5は
シランカツプリング剤もしくはクロム系カツプリング剤
を含むまたは含まないポリ珪酸から成つている〇またこ
のポリ珪酸からなる保護被膜5と金属磁囲薄膜媒体3と
の密着団を良くするため両者の間にシランカツプリング
剤またはクロム系カツプリング剤からなる非常に薄い前
処理層4を設けることが本発明の特徴である。This is because if the waviness is large, the head floating above the magnetic storage body during recording and playback will not be able to follow the vertical movement of the magnetic storage body surface, and the distance between the head and the magnetic storage body will change, resulting in a change in the recording and playback area. Because it does. The non-magnetic field alloy layer coated on the alloy disk 1 by plating is mirror-finished to a surface roughness of 0.04 μm or less by mechanical polishing.
Note that if the alloy disk 1 is made of a metal that can be mirror-polished, the non-magnetic field alloy layer 2 will be unnecessary. A metal magnetic thin film medium 3 for high-density recording is coated on the non-magnetic field alloy layer 2 by plating. The protective coating 5, which sufficiently protects the metal magnetic thin film medium 3 from head contact or changes due to moisture or temperature, is made of polysilicic acid with or without a silane coupling agent or a chromium-based coupling agent. In order to improve the adhesion between the protective coating 5 made of silicic acid and the metal magnetic thin film medium 3, a very thin pretreatment layer 4 made of a silane coupling agent or a chromium-based coupling agent is provided between the two. It is a characteristic.
上記前処理層4はシランカツプリング剤の水溶液または
アルコール溶液を一体となつた下地体1,2および3を
回転させつつ吐出して塗布した後、約10分間乾燥させ
て非常に薄く(数10人)均一なシランカツプリング剤
の層を形成することができる。The pretreatment layer 4 is applied by discharging an aqueous or alcoholic solution of a silane coupling agent while rotating the base bodies 1, 2, and 3, and then dried for about 10 minutes to form a very thin layer (several 10 ) A uniform layer of silane coupling agent can be formed.
ここでいうシランカツプリング斎1は下記の一般式で示
される。CH2NH(CH2)2NH(CH2)3の如
き、官能基を持つ基を表わす。The silane coupling 1 mentioned here is represented by the following general formula. Represents a group having a functional group, such as CH2NH(CH2)2NH(CH2)3.
このようなシランカツプリング剤の例として次のものが
あげられる。ビニルトリクロルシラン CH2−CHS
iCl3ビニルトリエトキシシラン CH2−CHSi
(0C2H5)3ビニル−トリス(ベーターメトキシエ
トキシ)シランまたこの他に詳炉な人ヒ学式は明らかで
ないがド;二1゛′!.′;.17.X′.γフニリニ
エ孟Z:雑に枝分れして下図の様なマトリツクスを形成
しているポリアミノシランも含まれる。このようなシラ
ンカツプリング剤層は下地の金属磁曲薄膜3と、上に塗
布されるテトラヒドロキシシランとに強固に結合し、金
属磁曲薄膜3と保護被膜5とを密着囲よくつなぎ合わせ
ることができる。Examples of such silane coupling agents include the following: Vinyltrichlorosilane CH2-CHS
iCl3vinyltriethoxysilane CH2-CHSi
(0C2H5)3vinyl-tris(betamethoxyethoxy)silaneAlso, the exact chemical formula for this is not clear, but do;21゛'! .. ′;.. 17. X'. γ-Funilinie Meng Z: Also includes polyaminosilanes that are roughly branched to form a matrix like the one shown below. Such a silane coupling agent layer firmly bonds to the underlying metal magnetic thin film 3 and the tetrahydroxysilane coated thereon, thereby tightly and tightly connecting the metal magnetic thin film 3 and the protective coating 5. I can do it.
以上、シラン系のカツプリング剤について説明したがカ
ツプリング剤にはクロム系のものも存在する。Although silane-based coupling agents have been described above, chromium-based coupling agents also exist.
すなわちそれは次の様な構造をもつたウエルナ一型クロ
ム錯体である。10→C(CI2ここでRはメタクリル
基など官能基をもつた有機化合物を示すが、保護被膜と
反応可能なものであればよい。That is, it is a Werna type chromium complex with the following structure. 10→C(CI2) Here, R represents an organic compound having a functional group such as a methacrylic group, but any compound capable of reacting with the protective film may be used.
→はクロムへの配位を示す。クロム系カツプリング剤に
おいてもクロムとRの部分がそれぞれ金属磁囲薄膜3と
保護被膜5とを密着註よくつなぎ合わせることができる
。このようなクロム系カツプリング剤の例として次のも
のがあげられる。→ indicates coordination to chromium. Even in the case of a chromium-based coupling agent, the chromium and R portions can bond the metal magnetic field thin film 3 and the protective coating 5 with good adhesion. Examples of such chromium-based coupling agents include the following:
そしてこのようなクロム系カツプリング剤も前述のシラ
ンカツプリング剤と同様の操作によつて前処理層を形成
することができる。Such a chromium-based coupling agent can also be used to form a pretreatment layer in the same manner as the silane coupling agent described above.
次に本発明を実施例及び比較例を挙げて詳細に説明する
。Next, the present invention will be explained in detail by giving Examples and Comparative Examples.
比較例
合金盤1として施盤加工および熱矯正によつて十分小さ
なうねり(円周方向および半径方向でそれぞれ50μm
および100μm以下)をもつた面に仕上げられたディ
スク状アルミニウム合金基盤Eに非磁囲合金層2として
ニツケル一燐(Nip)合金を約50μmの厚さにめつ
きし、このニツケル一燐めつき膜を機械的研磨により表
面粗さ0.04μm以下、厚さ約30μmまで鏡面仕上
げしたのちその上に金属磁肖薄膜媒体3としてコバルト
ーニッケル一燐(CO−Ni−P)合金を約0.05μ
mの厚さにめつきした。Comparative Example Alloy Disk 1 had sufficiently small waviness (50 μm in each of the circumferential and radial directions) by lathe processing and thermal straightening.
A disk-shaped aluminum alloy base E finished with a surface having a surface of 100 μm or less) is plated with a nickel monophosphorus (Nip) alloy to a thickness of approximately 50 μm as the non-magnetic field alloy layer 2. The film was mechanically polished to a mirror finish with a surface roughness of 0.04 μm or less and a thickness of about 30 μm, and then a cobalt-nickel-monophosphorus (CO-Ni-P) alloy of about 0.0 mm was coated thereon as a metal magnetic thin film medium 3. 05μ
It was plated to a thickness of m.
さらにこのコバルトーニツケル一燐(CO−Ni−P)
合金膜の上に、下に示した組成の溶液を十分に混合した
後、回転塗布法(回転数200rpm)により500λ
の膜厚に塗布したデイスク状円盤を200℃の温度で3
時間電気炉中で焼成したものを磁気デイスクとした。実
施例 1
比較例と同様な方法でアルミニウム合金盤上にニツケル
〜燐被膜、その上にコバルトーニツケル燐被膜が被覆さ
れたデイスク状円盤上に前処理液としてガソマアミノプ
ロピルトリニトキシシランの0.1%n−ブチルアルコ
ール溶液を回転塗布してそのまま10分間回転を続けて
溶媒を発熱させて乾燥させてガンマアミノプロピルトリ
エトキシシランからなる非常に薄い前処理層を形成させ
る。Furthermore, this cobalt nickel monophosphorus (CO-Ni-P)
After thoroughly mixing a solution with the composition shown below on the alloy film, a coating of 500λ was applied using a spin coating method (rotation speed: 200 rpm).
A disc-shaped disc coated with a film thickness of
A magnetic disk was made by firing in an electric furnace for an hour. Example 1 In the same manner as in Comparative Example, a nickel to phosphorus film was coated on an aluminum alloy disc, and a cobalt-nickel phosphorus film was coated on the disc-shaped disc, and 0% of gasomaminopropyltrinitoxysilane was applied as a pretreatment liquid. .1% n-butyl alcohol solution is spin-coated and the spin is continued for 10 minutes to generate heat and dry the solvent to form a very thin pretreatment layer of gamma-aminopropyltriethoxysilane.
その後このガンマアミノプロピルトリエトキシシランの
前処理層の上に比較例と同様な方法でポリ珪酸の被膜を
500への厚さに形成させたものを磁気デイスクとした
。実施例 2
実施例1と同様な方法で、但し前処理液としてポリアミ
ノシランの01%n−ブチルアルコール溶液を用いて前
処理層を形成し、その上に比較例と同様な方法でポリ珪
酸の被膜を500人の厚さで形成させたものを磁気デイ
スクとした。Thereafter, a polysilicic acid coating was formed to a thickness of about 500 mm on the gamma-aminopropyltriethoxysilane pretreatment layer in the same manner as in the comparative example, and a magnetic disk was prepared. Example 2 A pretreatment layer was formed in the same manner as in Example 1, except that a 01% n-butyl alcohol solution of polyaminosilane was used as the pretreatment liquid, and polysilicic acid was formed on it in the same manner as in the comparative example. A magnetic disk was prepared by forming a film with a thickness of 500 mm.
実施例 3
実施例1と同様な方法で、但し前処理液としてガンマー
グリシドキシプロピルトリメトキシシランの0.1%水
溶液を用いて前処理層を形成し,その上に比較例と同様
な方法でポリ珪酸の被膜を500人の厚さで形成させた
ものを磁気デイスクとした。Example 3 A pretreatment layer was formed using the same method as in Example 1, except that a 0.1% aqueous solution of gamma glycidoxypropyltrimethoxysilane was used as the pretreatment liquid, and a pretreatment layer was formed on the pretreatment layer using the same method as in the comparative example. A magnetic disk was prepared by forming a polysilicate film with a thickness of 500 mm.
実施例 4
実施例3と同様な方法で前処理層を形成させ、その上に
従来例と同様な方法で但し丁に示した組成物溶液を塗布
して保護被膜を0.1μmの厚さで形成させたものを磁
気デイスクとした。Example 4 A pretreatment layer was formed in the same manner as in Example 3, and the composition solution shown in the above was applied on the pretreatment layer in the same manner as in the conventional example to form a protective film with a thickness of 0.1 μm. The resulting product was used as a magnetic disk.
実施例 5
実施例1と同様な方法で前処理層を形成し、その上に従
来例同様な方法で但し丁に示した組成物?液を塗布して
保護被膜を0.1μmの厚さで形成させたものを磁気デ
イスクとした。Example 5 A pretreatment layer was formed in the same manner as in Example 1, and the composition shown in the proviso was applied thereon in the same manner as in the conventional example. A magnetic disk was prepared by applying a liquid to form a protective film with a thickness of 0.1 μm.
実施例 6
実施例1と同様な方法で但し前処理液としてメタクリレ
ートクロミツククロリドの0,1%n−ブナルアルコー
ル溶液を用いて前処理層を形成し、その上に従来例と同
様な方法で但し下に示した組成物?液を塗布して保護被
膜を0.1μmの厚さで形成させたものを磁気ディスク
とした。Example 6 A pretreatment layer was formed in the same manner as in Example 1, except that a 0.1% n-bunal alcohol solution of methacrylate chromic chloride was used as the pretreatment liquid, and a pretreatment layer was formed thereon in the same manner as in the conventional example. However, the composition shown below? A magnetic disk was prepared by applying a liquid to form a protective film with a thickness of 0.1 μm.
実施例 7
実施例6と同様な方法で前処理層を形成させ、その上に
従来例と同様な方法で但し丁に示した組成物溶液を塗布
して保護被膜を0.1μmの厚さで形成させたものを磁
気デイスクとした。Example 7 A pretreatment layer was formed in the same manner as in Example 6, and a protective film with a thickness of 0.1 μm was formed by applying the composition solution shown in the above in the same manner as in the conventional example. The resulting product was used as a magnetic disk.
′Vノ ′VJ−11tw[入
Rv=3′V比較例および実施例1〜7に示した各磁
気デイスクを用いて,ヘツドと磁気ディスク面とが操作
開始時および操作終了時に常に接触状態にある記録再生
方法において、この操作開始と操作終了の繰り返し操作
試験を前部にテーパのついたゴミを引込み易いヘツドを
用いて20,000回繰り返し行なつたところ比較例の
磁気デイスクではヘツドの摩擦跡の約30%が剥離した
が、実施例1〜7の各磁気デイスクでは剥離は皆無であ
つた。'V'VJ-11tw [in
Rv = 3'V Using each of the magnetic disks shown in the comparative example and Examples 1 to 7, the recording and reproducing method in which the head and the magnetic disk surface are always in contact at the start and end of the operation, A repeated operation test was conducted 20,000 times using a head with a tapered front to easily pull in dirt, and it was found that about 30% of the friction marks on the head of the comparative magnetic disk had peeled off. In each of the magnetic disks of Examples 1 to 7, there was no peeling.
また実施例4,5,6,7の各磁気デイスクについては
25,000回繰り返しにおいても剥離は皆無であつた
。以上比較例および実施例1〜7で示された様に.金属
磁註薄膜媒体との間に前処理層を設けたポリ珪酸からな
る保護被膜を有する磁気ディスクは前処理層を設けない
ポリ珪酸単体の保護被膜を有する磁気デイスクに比べて
ヘツドに対する耐摩耗囲が向上していることが分る。Moreover, for each of the magnetic disks of Examples 4, 5, 6, and 7, there was no peeling even after 25,000 repetitions. As shown in the comparative examples and Examples 1 to 7 above. A magnetic disk with a protective coating made of polysilicate with a pretreatment layer provided between it and the metal magnetic thin film medium has a wear-resistant enclosure for the head compared to a magnetic disk with a protective coating made of polysilicate without a pretreatment layer. It can be seen that this has improved.
また特に前処理層の上にシランカツプリング剤またはク
ロム系カツプリング剤を含んだポリ珪酸保護被膜を有す
る磁気デイスクは耐摩耗団がさらに向上していることが
分る。この様にポリ珪酸からなる保護被膜の耐摩耗囲の
向上に際しシランカツプリング剤またはクロム系カツプ
リング剤からなる前処理層が非常に効果のあることが分
つたが.保護被膜にポリ珪酸以外の高分子化合物を用い
てもこの高分子化合物が、前処理層と十分密着するもの
であれば同様の効果がぁることは明らかであるoなお、
本発明によるシランカツプリング剤またはクロム系カツ
プリソグ剤を前処理層として形成した?、その上に形成
したシランカツプリング剤もしくはクロム系カップリン
グ剤を含むまたは含まないポリ珪酸保護被膜はこの前処
理を行なわないポリ珪酸保護被膜に比べ耐摩耗囲が向上
したが、その他の囲能すなわち耐ヘツドクラツシユ囲,
潤滑囲,耐環境囲,下地金属体の磁気特囲などは全く変
らなかつた。In particular, it can be seen that the wear resistance of magnetic disks having a polysilicate protective coating containing a silane coupling agent or a chromium-based coupling agent on the pretreatment layer is further improved. In this way, it has been found that a pretreatment layer made of a silane coupling agent or a chromium-based coupling agent is very effective in improving the wear resistance of a protective coating made of polysilicic acid. It is clear that the same effect can be obtained even if a polymer compound other than polysilicic acid is used for the protective coating, as long as the polymer compound adheres sufficiently to the pretreatment layer.
Was the silane coupling agent or chromium-based coupling agent according to the present invention formed as a pretreatment layer? The wear resistance of polysilicate protective coatings with or without a silane coupling agent or chromium-based coupling agent formed thereon was improved compared to polysilicic acid protective coatings without this pretreatment, but other coatings did not. In other words, head crushing resistance,
There was no change in the lubrication enclosure, environmental resistance enclosure, magnetic enclosure of the underlying metal body, etc.
また本発明の比較例,実施例においては非磁囲円盤状基
体として金属を用いたが、例えばプラスチツクなども使
用可能であり基体の種類を問わないことは明らかである
。In addition, in the comparative examples and examples of the present invention, metal was used as the non-magnetic circle disk-shaped substrate, but it is clear that, for example, plastic or the like can also be used, and the type of the substrate does not matter.
図は本発明の磁気記憶体の断面図である。
図において,1は合金円盤.2は鏡面仕上げされた非磁
曲合金層.3は金属磁註薄膜媒体.4はシランカツプリ
ング剤またはクロム系カツプリング剤からなる前処理層
、5はシランカツプリング剤もしくはクロム系カツプリ
ング剤を含むまたは含まないポリ珪酸保護被膜、6は磁
気記憶体である。The figure is a sectional view of the magnetic storage body of the present invention. In the figure, 1 is an alloy disk. 2 is a mirror-finished non-magnetic alloy layer. 3 is a metal magnetic thin film medium. 4 is a pretreatment layer made of a silane coupling agent or a chromium-based coupling agent; 5 is a polysilicate protective coating containing or not containing a silane coupling agent or a chromium-based coupling agent; and 6 is a magnetic memory.
Claims (1)
媒体が被覆され、この金属磁性薄膜媒体上に前処理層が
被覆され、この前処理層の上にポリ珪酸保護被膜が被覆
されていることを特徴とする磁気記憶体。 2 前処理層がシランカップリング剤である特許請求の
範囲第1項記載の磁気記憶体。 3 前処理層がクロム系のカップリング剤である特許請
求の範囲第1項記載の磁気記憶体。 4 前処理層の上に被覆されたポリ珪酸保護被膜中にシ
ランカップリング剤を含む特許請求の範囲第1項記載の
磁気記憶体。 5 前処理層の上に被覆されたポリ珪酸保護被膜中にク
ロム系のカップリング剤を含む特許請求の範囲第1項記
載の磁気記憶体。 6 非磁性円盤状基体を鏡面研磨したものの上に、金属
磁性薄膜媒体を被覆し、さらにこの上に前処理剤溶液を
塗布し、この前処理剤層を乾燥させた後、引続きこの上
に重合してポリ珪酸保護被膜を形成し得る物質を含む溶
液を塗布した後、全体を常温以上かつ前記金属磁性薄膜
媒体の磁気的性質の変化が記録および再生に影響を与え
ない温度で焼成することによりポリ珪酸保護被膜を形成
させることを特徴とする磁気記憶体の製造方法。 7 前処理剤溶液がシランカップリング剤溶液である特
許請求の範囲第6項記載の磁気記憶体の製造方法。 8 前処理剤溶液がクロム系カップリング剤溶液である
特許請求の範囲第6項記載の磁気記憶体の製造方法。 9 ポリ珪酸保護被膜を形成し得る物質はテトラアルコ
キシシランまたはテトラヒドロキシシランまたはそれら
の混合物である特許請求の範囲第6項記載の磁気記憶体
の製造方法。 10 ポリ珪酸保護被膜を形成し得る物質はシリコンア
シレートである特許請求の範囲第6項記載の磁気記憶体
の製造法。 11 ポリ珪酸保護被膜を形成し得る物質を含む溶液に
はシランカップリング剤を含む特許請求の範囲第6項記
載の磁気記憶体の製造方法。 12 ポリ珪酸保護被膜を形成し得る物質を含む溶液に
はクロム系カップリング剤を含む特許請求の範囲第6項
記載の磁気記憶体の製造方法。[Claims] 1. A metal magnetic thin film medium is coated on a mirror-polished nonmagnetic disc-shaped substrate, a pretreatment layer is coated on the metal magnetic thin film medium, and a polysilicate protective layer is coated on the pretreatment layer. A magnetic memory body characterized by being coated with a film. 2. The magnetic memory according to claim 1, wherein the pretreatment layer is a silane coupling agent. 3. The magnetic memory according to claim 1, wherein the pretreatment layer is a chromium-based coupling agent. 4. The magnetic memory according to claim 1, which contains a silane coupling agent in the polysilicate protective coating coated on the pretreatment layer. 5. The magnetic memory according to claim 1, wherein the polysilicate protective coating coated on the pretreatment layer contains a chromium-based coupling agent. 6 A metal magnetic thin film medium is coated on a mirror-polished non-magnetic disk-shaped substrate, a pre-treatment agent solution is applied on top of this, and after this pre-treatment agent layer is dried, polymerization is subsequently applied on top of this. After applying a solution containing a substance capable of forming a polysilicate protective film, the whole is fired at a temperature above room temperature and at a temperature at which changes in the magnetic properties of the metal magnetic thin film medium do not affect recording and reproduction. A method for producing a magnetic memory, which comprises forming a polysilicate protective film. 7. The method for manufacturing a magnetic memory according to claim 6, wherein the pretreatment agent solution is a silane coupling agent solution. 8. The method for manufacturing a magnetic memory according to claim 6, wherein the pretreatment agent solution is a chromium-based coupling agent solution. 9. The method for manufacturing a magnetic memory according to claim 6, wherein the substance capable of forming the polysilicate protective film is tetraalkoxysilane, tetrahydroxysilane, or a mixture thereof. 10. The method for manufacturing a magnetic memory body according to claim 6, wherein the substance capable of forming the polysilicate protective film is silicon acylate. 11. The method for manufacturing a magnetic memory body according to claim 6, wherein the solution containing the substance capable of forming the polysilicate protective film contains a silane coupling agent. 12. The method of manufacturing a magnetic memory according to claim 6, wherein the solution containing the substance capable of forming the polysilicate protective film contains a chromium-based coupling agent.
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1438577A JPS5939808B2 (en) | 1977-02-10 | 1977-02-10 | Magnetic memory and its manufacturing method |
| US05/860,832 US4152487A (en) | 1976-12-17 | 1977-12-15 | Magnetic record member |
| DE2759817A DE2759817C2 (en) | 1976-12-17 | 1977-12-16 | Magnetic recording element |
| DE2756254A DE2756254C3 (en) | 1976-12-17 | 1977-12-16 | Magnetic recording element |
| DE2759985A DE2759985C2 (en) | 1976-12-17 | 1977-12-16 | Magnetic recording element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1438577A JPS5939808B2 (en) | 1977-02-10 | 1977-02-10 | Magnetic memory and its manufacturing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5399902A JPS5399902A (en) | 1978-08-31 |
| JPS5939808B2 true JPS5939808B2 (en) | 1984-09-26 |
Family
ID=11859578
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1438577A Expired JPS5939808B2 (en) | 1976-12-17 | 1977-02-10 | Magnetic memory and its manufacturing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5939808B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6240713U (en) * | 1985-08-30 | 1987-03-11 | ||
| JPH02136910U (en) * | 1989-04-17 | 1990-11-15 |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57158033A (en) * | 1981-03-24 | 1982-09-29 | Nec Corp | Magnetic storage body |
| JPS58208936A (en) * | 1982-05-28 | 1983-12-05 | Sony Corp | Magnetic recording medium |
-
1977
- 1977-02-10 JP JP1438577A patent/JPS5939808B2/en not_active Expired
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6240713U (en) * | 1985-08-30 | 1987-03-11 | ||
| JPH02136910U (en) * | 1989-04-17 | 1990-11-15 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5399902A (en) | 1978-08-31 |
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