JPS6016097B2 - How to remove boron-containing film - Google Patents
How to remove boron-containing filmInfo
- Publication number
- JPS6016097B2 JPS6016097B2 JP59107525A JP10752584A JPS6016097B2 JP S6016097 B2 JPS6016097 B2 JP S6016097B2 JP 59107525 A JP59107525 A JP 59107525A JP 10752584 A JP10752584 A JP 10752584A JP S6016097 B2 JPS6016097 B2 JP S6016097B2
- Authority
- JP
- Japan
- Prior art keywords
- boron
- film
- containing film
- silicon
- remove boron
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
Landscapes
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
- Weting (AREA)
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、シリコン結晶（Ｓｉ）に高濃度ほう素（Ｂ）
を拡散した結果生ずる、雛溶性のＢ２０３−Ｓｉ０２一
Ｂ一Ｓｉ膜（以下、難溶性被膜と略す）を除去する方法
に関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention is directed to high concentration boron (B) in silicon crystal (Si).
The present invention relates to a method for removing a soluble B203-Si02-B-Si film (hereinafter abbreviated as a hardly soluble film) that is produced as a result of diffusion of the B203-Si02-B-Si film.
従来例の構成とその問題点
シリコン結晶にほう素を高濃度に拡散導入するには、一
般に、ジボラン（年日６）窒化ほう素（ＢＮ）あるいは
ハロゲン化ほう素（ＢＣ１３、ＢＢｒ３など）を拡散源
として拡散される。Conventional configurations and their problems In order to diffuse and introduce boron into silicon crystals at high concentrations, diborane (6), boron nitride (BN), or boron halides (BC13, BBr3, etc.) are generally diffused. diffused as a source.
これらのＺＨ６、ＢＮ、ＢＢｒ３は、拡散後Ｂ２０３一
Ｓｉ０２一Ｂ一Ｓｉの形で表面に形成され、この膜をＨ
Ｆ溶液で食刻することはきわめて困難である。たとえば
、従来の代表的な食刻方法をのべると、あらかじめ硝酸
で試料体を煮沸後、水蒸気を含んだ酸素もしくは酸素の
みの気流にさらし、Ｓｉ結晶表面を酸化して、食刻され
にくいＢ−Ｓｉを、Ｂ２０３−Ｓｉ０３の形に変えたの
ち、ＨＦ溶液にて食刻していた。しかし、この方法をも
ちいても完全に除去することは、困難であるのみならず
、酸化の過程でシリコン結晶中の拡散プロフアィルが変
化するおそれがある。また、この雛溶性被膜が厚い場合
、もしくは、非常に高濃度である場合、この上にホトェ
・ッチング法をもちいて、窓あげ形成をすると、食刻速
度が遅く長時間必要であり、工業的に実施するのはきわ
めて不適当であり、加えて完全に食刻除去されないため
に、いまいま接触不良などの発生の原因となった。These ZH6, BN, and BBr3 are formed on the surface in the form of B203-Si02-B-Si after diffusion, and this film is
Etching with F solution is extremely difficult. For example, in a typical conventional etching method, a sample is boiled in nitric acid in advance, and then exposed to an airflow containing water vapor or oxygen alone to oxidize the Si crystal surface, which makes it difficult to etch B- After changing Si into the form of B203-Si03, it was etched with an HF solution. However, even with this method, it is not only difficult to completely remove it, but also the diffusion profile in the silicon crystal may change during the oxidation process. In addition, if this soluble film is thick or has a very high concentration, if the photo-etching method is used to form a window on it, the etching speed is slow and it takes a long time, making it difficult to manufacture industrially. It is extremely inappropriate to carry out this process, and in addition, since the etching is not completely removed, it has caused problems such as poor contact.
発明の目的
本発明は、これらの問題点を解決した高濃度ホウ素含有
の鍵熔性被膜の除去方法を提案するものである。OBJECTS OF THE INVENTION The present invention proposes a method for removing a fusible key film containing a high concentration of boron, which solves these problems.
発明の構成
本発明の方法は、シリコン結晶に、ほう素を用いて、高
濃度のＰ型不純物領域を拡散形成したのち、この拡散で
生じた、Ｂ２０３一Ｓｉ０２−Ｂ−Ｓｉ系成分の難熔性
被膜を除去するにあたり、上記簸溶性被膜上に、たとえ
ばシラン（ＳｉＨ４）アンモニア（Ｎ比）の反応により
、Ｓｉ３Ｎ４膜をたとえば約１００〜１０００Ａに形成
し、たとえば温度１５０〜２００℃の熱りン酸にて食刻
を行なうものである。Structure of the Invention The method of the present invention involves diffusing and forming a highly concentrated P-type impurity region in a silicon crystal using boron, and then dissolving the refractory B203-Si02-B-Si system component produced by this diffusion. To remove the elutriation-soluble coating, a Si3N4 film is formed on the above-mentioned elutriation-soluble coating, for example, by a reaction of silane (SiH4) and ammonia (N ratio), for example, to a thickness of about 100 to 1000 A, and heated to a temperature of, for example, 150 to 200°C. Etching is performed using acid.
本発明の方法によれば、シリコン結晶表面における高濃
度ホウ素に、窒素（Ｎ）が導入されることによって、Ｈ
Ｆ溶液又は熱リン酸によって食刻されやすくなるものと
推定される。実施例の説明
本発明の一実施例として、たとえばシリコン基体へ、ジ
ボラン（弦日６）を用いてＰ型不純物の拡散導入を行な
った後、温度６７０ｑＣ、窒素７．５そ／ｍｉｎ、アン
モニア４．８夕／ｍｉｎ ＳｉＨ４．５ｃｃ′ｍｉｎの
条件で、約５００ＡのＳＩＮ４膜を形成し、温度１８０
つ０の熱リン酸（日３Ｐ０４）にて食刻を行なった。According to the method of the present invention, nitrogen (N) is introduced into the high concentration boron on the silicon crystal surface, so that H
It is presumed that it becomes more easily etched by F solution or hot phosphoric acid. DESCRIPTION OF EMBODIMENTS As an example of the present invention, for example, a P-type impurity is diffused into a silicon substrate using diborane (6 days), and then a temperature of 670 qC, nitrogen at 7.5 so/min, and ammonia at 4 A SIN4 film of approximately 500A was formed under the conditions of .8 evenings/min SiH4.5cc'min, and the temperature was 180℃.
Etching was carried out with hot phosphoric acid (Sunday 3P04).
この結果、きれいな表面がえられた。尚、本実施例は上
記難溶性被膜が１０００Ａ以下の膜厚である場合有効で
ある。発明の効果
以上のように、本発明によれば容易に上記競落性被膜が
除去できるので工業的価値が高いものである。This resulted in a clean surface. Note that this embodiment is effective when the hardly soluble coating has a thickness of 1000A or less. Effects of the Invention As described above, the present invention has high industrial value because the above-mentioned adhesive film can be easily removed.
Claims (1)
ほう素（Ｂ＿２Ｏ＿３）、酸化けい素（ＳｉＯ＿２）、
ほう素（Ｂ）およびけい素（Ｓｉ）を有する難溶性被膜
を除去するにあたり、上記難溶性被膜上に窒化けい素（
Ｓｉ＿３Ｎ＿４）膜を形成し、その後上記窒化けい素膜
と上記難溶性被膜を熱リン酸にて食刻するほう素含有被
膜の除去方法。1 Boron oxide (B_2O_3), silicon oxide (SiO_2), which are generated when boron is diffused into a semiconductor crystal,
When removing a poorly soluble coating containing boron (B) and silicon (Si), silicon nitride (
A method for removing a boron-containing film, in which a Si_3N_4) film is formed, and then the silicon nitride film and the hardly soluble film are etched with hot phosphoric acid.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59107525A JPS6016097B2 (en) | 1984-05-29 | 1984-05-29 | How to remove boron-containing film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59107525A JPS6016097B2 (en) | 1984-05-29 | 1984-05-29 | How to remove boron-containing film |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13537075A Division JPS5943821B2 (en) | 1975-11-10 | 1975-11-10 | Houso Gan Yuuhi Makunojiyokiyohouhou |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS605525A JPS605525A (en) | 1985-01-12 |
| JPS6016097B2 true JPS6016097B2 (en) | 1985-04-23 |
Family
ID=14461399
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59107525A Expired JPS6016097B2 (en) | 1984-05-29 | 1984-05-29 | How to remove boron-containing film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6016097B2 (en) |
-
1984
- 1984-05-29 JP JP59107525A patent/JPS6016097B2/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS605525A (en) | 1985-01-12 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US3479237A (en) | Etch masks on semiconductor surfaces | |
| US3615943A (en) | Deposition of doped and undoped silica films on semiconductor surfaces | |
| US3798081A (en) | Method for diffusing as into silicon from a solid phase | |
| GB1100780A (en) | Improvements in or relating to the diffusion of doping substances into semiconductor crystals | |
| GB1177759A (en) | Method of Fabricating Semiconductor Devices | |
| US3506508A (en) | Use of gas etching under vacuum pressure for purifying silicon | |
| GB1432949A (en) | Silicon dioxide semiconductor product containing boron trioxide and phosphorus pentoxide dopants | |
| US3645812A (en) | Method of purifying a quartz processing vessel for use in the production of semiconductors | |
| US3751314A (en) | Silicon semiconductor device processing | |
| JPH07211690A (en) | Selective etching method | |
| US3657030A (en) | Technique for masking silicon nitride during phosphoric acid etching | |
| JPS6016097B2 (en) | How to remove boron-containing film | |
| US3871931A (en) | Method for selectively etching silicon nitride | |
| US3759761A (en) | Washed emitter method for improving passivation of a transistor | |
| US3152932A (en) | Reduction in situ of a dipolar molecular gas adhering to a substrate | |
| JP2002299274A (en) | Manufacturing method for semiconductor device | |
| JPS6226569B2 (en) | ||
| JPS5943821B2 (en) | Houso Gan Yuuhi Makunojiyokiyohouhou | |
| US3846194A (en) | Process for producing lightly doped p and n-type regions of silicon on an insulating substrate | |
| JP3520911B2 (en) | Method for manufacturing semiconductor device | |
| JPS626647B2 (en) | ||
| JPH03163821A (en) | Manufacture of semiconductor device | |
| JPS57122515A (en) | Manufacture of semiconductor device | |
| JPS5927529A (en) | Fabrication of semiconductor device wafer | |
| JP2730156B2 (en) | Method for forming polycrystalline silicon film |