JPS5945992B2 - Electrode manufacturing method for matrix-driven elements - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for manufacturing electrodes for matrix, drive type display elements, and image pickup elements, and particularly relates to a method for manufacturing electrodes for matrix drive type elements configured to facilitate inspection of the quality of the electrodes. .

Matrix-type display elements using liquid crystals, electroluminescence, fluorescent light, etc. are being actively researched, and some technical announcements have already been made.

For example, one in which one substrate is a silicon chip with an integrated array of MOS transistors and capacitors is disclosed in Japanese Patent Application Laid-open No. 5
0-10993, one of the substrates is an array of thin film transistors and capacitors arranged on a glass plate, such as IEEE Tra-ns and onElec.
In tronDevices, Vol. 20, pages 995-1001, IEEE Tr.
ans, onElectronDe-, vices 2nd
They are described in detail in Volume 6, pages 1123 to 1128. An image sensor is one in which a photodiode light receiving section and an array of MOS transistors are integrated on a silicon chip, as described in, for example, the Journal of the Television Society, Vol. 33, No. 7, pp. 548-5.
It is described on page 53. Next, regarding such a matrix drive type element, first, the structure and operation necessary for explaining the present invention will be explained using a switch matrix type liquid crystal display element using MOS transistors as an example.

5. FIG. 1 is a schematic plan view of a switch matrix type liquid crystal display element, and MOS transistors and storage capacitors are shown as an equivalent circuit.

The switch-shaped liquid crystal display element has a front glass substrate 2 having an indium oxide transparent electrode 1 coated on its inner surface,
It consists of a rear silicon substrate 3 facing the glass substrate 2 at a distance of approximately 10 μm and on which an integrated circuit is formed, and a liquid crystal layer (not shown) inserted between the silicon substrate 3 and the glass substrate 2. On the silicon substrate 3, there are four groups of signal electrodes that are electrically insulated from the silicon substrate 3 by a silicon oxide film or the like and arranged in parallel at equal intervals, and a silicon Five groups of scanning electrode busbars are electrically insulated from four groups of signal electrode busbars by an interlayer insulating film (not shown), and are arranged in a matrix near the respective intersections of each signal electrode busbar and each scanning electrode busbar. Six groups of display pixels are formed. The display pixel 6 is composed of a MOS transistor 7 and a storage capacitor 8. The gate electrode of the MOS transistor 7 is connected to the scanning electrode bus 5, the source electrode is connected to the signal electrode bus 4, and the drain electrode is connected to the single-power electrode of the storage capacitor 8. The transparent electrode 1 and the display electrode 9 facing each other are connected to each other. Next, the operation of this switch matrix type liquid crystal display element will be briefly explained.

Terminals Yl, Y2, Y3, . . . Yj, . . . such as bonding pads arranged at the ends of the scanning electrode bus bar 5
...Yllll) and Y{・,Y:,Yku...Y1
A scanning voltage pulse having a frame frequency of, for example, 30 Hz is sequentially applied to at least one of YITl), and the MOS transistors 7 connected to the scanning electrode bus 5 are made conductive for each scanning electrode bus. do. At the same time, terminals Xl, X2, X3,...X are connected to four groups of signal electrode busbars.
i,...XO) and Xl,X≦,X6...
···Ma. . During about 33 ms until receiving the next scan, the liquid crystal sandwiched between the transparent electrode 1 and the display electrode 9 is electrically excited, and an image is displayed by a so-called line sequential scanning method. If the size of a display element of this type is, for example, 3 cm x 4 CTL, and the number of display pixels is 500 x 500, the total length of the electrode bus bar will be as much as 35 m, and there may be a disconnection of the electrode bus bar or electrical contact with the silicon substrate 3. Short circuits often cause linear defects in the display, and conventionally, the electrode busbars were connected one by one between terminals XiXl (1=1 to n) and between YjY
It was necessary to test between 'j (j-1 to m).

However, it is practically impossible to line up a large number of probes at the same time, and when the number of probes is small, the inspection time becomes long, which poses a practical problem, and the presence or absence of defects in the electrode bus bar is unknown. There was a lot of waste when the device was manufactured and defects were found during the final functional test. The present invention has been made in view of these drawbacks, and its purpose is to improve the ability to easily determine the presence or absence of defects such as disconnection of a large number of parallel electrode busbars and short circuits with the substrate. An object of the present invention is to provide a method for manufacturing electrodes of a matrix-driven element.

According to the present invention, the above-mentioned object is to extend the ends of the electrode busbars, electrically connect two wires at a time, form the wiring in a meandering manner, and check for defects across the entire electrode busbar. This is accomplished by inspecting and removing the extension of the electrode busbar.

DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, a method for manufacturing electrodes of a matrix and drive type element according to the present invention will be explained with reference to the drawings.

FIG. 2 is a plan view of a silicon substrate forming a switch matrix type liquid crystal display element according to the present invention.
, ) (X'1... Generally, these electrode busbar groups are manufactured at the same time or around the same time as the MOS transistors, storage capacitors, display electrodes, etc.
After forming an insulating film 10 made of silicon oxide with a thickness of about 1 μm by the icalVapOrDepOsitiOn method,
An aluminum layer (not shown) is provided on the insulating film 10 by vacuum evaporation. Thereafter, a photoresist is applied to the entire surface of the aluminum layer, and the photoresist is further exposed to light using a photomask to remove the photoresist in other parts except for the part corresponding to the electrode bus bar 4. Subsequently, the exposed aluminum layer is etched using a phosphoric acid-based Al etching solution, thereby forming the electrode busbars in the form of stripes. In this case, the ends of the electrode busbars 4 are made of aluminum terminals (X1 to Xn,) (Xζ to X'
n) and electrically connects each two adjacent electrode busbars by the busbar connection wiring part 11,
Further, there is a terminal X on the busbar extension of the terminals Xl and X'n. and X≦. Therefore, the electrode busbar is terminal X as shown in FIG. and terminal
6 are electrically connected. After that, ABCD in the diagram
For example, PSG (PhOsphiSilica) is formed on the silicon substrate 3 except for the part 12 and the A/B7C7D7 part 13
teGlass). This step uses the usual CVD method and photoetching process. Next, after the above manufacturing process, terminal X is formed.

By testing the continuity between the electrode busbar 4 and the terminal
The presence or absence of disconnection is checked throughout. Also, terminal
By testing the continuity between O or X2 and the silicon substrate 3, the presence or absence of a short circuit across the entire electrode bus bar 4 is confirmed. The silicon substrate 3, which was found to have no defects in the electrode bus bar 4, was then wet-etched using an Al etching solution mainly containing phosphoric acid to remove the ABCD portion 12 and the A.
/B'C'D/ Remove the bus connection wiring section 11 in the section 13, and then connect the terminals Xl, X2...Xn, X},
X≦...The PSG covering the surface of X2 is removed using an ammonium fluoride buffer solution to complete the electrode formation of the switch matrix type liquid crystal display element. In the above method, the busbar connection wiring part 11 was removed using wet etching, but gas etching using HCI, HF, etc., CF4, CH
It can also be carried out by so-called dry etching such as plasma etching using F3 or the like or ion etching using Ar, Xe or the like.

Next, another embodiment of the electrode manufacturing method for a matrix 1 drive type element according to the present invention will be described with reference to FIG.

However, the same parts as those in FIG.
The steps up to the application of PSG except for the A'B7C'D' portions 13 are the same as in the case of FIG. 2, so the explanation thereof will be omitted. After attaching PSG) terminal XO9XlPX "1
0Xn9XP X(,X(...P on the surface of
Etch and remove SG. Next, terminal X. The presence or absence of disconnection of the electrode bus bar 4 and the terminal X by one continuity test between and terminal X≦. Or conduct a continuity test between the terminal
Cut along F and E'F' with a diamond scriber or laser scriber, respectively.
By removing the D section 12 and the A'B'CID' section 13 from the silicon substrate 3, the electrode busbars 4 are made independent, and the electrode forming process is completed. The silicon substrate is usually circular, and the silicon substrate after the process is cut into rectangular elements using a diamond scriber laser scriber, an ultra-thin diamond grindstone, etc. Therefore, the busbar connection wiring portion 11 is arranged in the dicing area around the elements. Another embodiment of the present invention devised in consideration of this point will be described with reference to FIG. 4.

In this case as well, as in the previous example, the MOS transistors, storage capacitors, etc. will be omitted, and the connection between the electrode buses 4 and 5 will be mainly explained. In addition, the same numbers and symbols are given to the same parts as in the previous drawings. Reference numeral 3 designates a circular silicon substrate, on which an insulating film 10 of silicon oxide is formed, on which a signal electrode bus 4 is arranged, and furthermore, the intersection with the electrode bus 4 is made of silicon oxide, etc. After forming an interlayer insulating film (not shown), scanning electrode busbars 5 are formed.

In this case, line segment 1J, JK, KL, L, MN, N0, 0
The electrode busbars 4 and 5 are formed so that the busbar connection wiring portion 11 is located in the dicing region 14 surrounded by P and PM. After this, terminal X. ,Xl,...
Y:, . . . PSG is deposited on the surface of the silicon substrate 3 except for the surface of YITl. Next, electrode bus bars 4, 5
Check whether there is a disconnection at terminal X. Between terminal X and terminal Y. Terminal X and terminal Y are inspected for short circuits between each of the electrode busbars 4 and 5 and the silicon substrate 3. Or x
2 and the silicon substrate 3. Subsequently, for electrode busbars 4 and 5 with no defects, the dicing area is cut along EF, E/F/, HG, and H'G' with a diamond scriber or the like to complete the electrode forming process. Next, an embodiment of the present invention applied to manufacturing a plurality of elements, particularly two elements 16 and 17, from the silicon substrate 3 will be described with reference to FIG.

Line segment J, JK, KL, LI, MN, NO, OP, PM,
Dicing area 14 surrounded by QR, RS, ST, and TQ
The electrode busbar 4 is formed such that the busbar connection wiring part 11 and the busbar extension part 15 are located at , and as in the above embodiment, there is no possibility of disconnection of the electrode busbar 4 and short circuit between the electrode busbar 4 and the silicon substrate 3. Inspect for the presence of. Then, the dicing area 14 of the silicon substrate 3 is cut along EF, E'F', U, IJ, and KL to complete the electrode formation, and the two elements 16, 17 are cut.
Manufacture. The above has described a method for manufacturing an electrode busbar having a configuration that allows easy inspection of disconnections and short circuits with the substrate using a switch matrices type liquid crystal display element as an example. However, the present invention is not limited to display elements. The present invention can also be applied to an image sensor or the like as long as the device has a bus bar.

Further, in the above embodiments, the electrode busbar is formed on a single crystal silicon substrate, but the substrate may be a glass plate with a layer of amorphous silicon, zinc oxide, etc. applied thereto. As explained above, in manufacturing a large number of parallel electrode busbars on an insulating film of a substrate, the present invention extends the ends of each electrode busbar and electrically connects them two by two, so that the wiring meanders. This makes it easy to inspect the electrode bus for disconnections and short circuits with the board, and then removes the wiring at the extension of the electrode bus, allowing you to identify defects in the electrode bus during the manufacturing process and identify defective products. This eliminates the waste of continuous assembly, and greatly contributes to improving productivity and reducing costs of matrix-driven elements.

[Brief explanation of the drawing]

FIG. 1 is a schematic plan view of a conventional matrix-driven element, and FIGS. 2, 3, 4, and 5 each illustrate electrode formation for explaining the electrode manufacturing method of a matrix-driven element of the present invention. FIG. 3 is a schematic plan view of the substrate. In the figure, 3...board, 4, 5...
Electrode bus bar, 10... Insulating film, 11, 15...
. . . Bus bar connection wiring section, 14 . . . Dicing area.

Claims (1)

[Claims] 1. On a semiconductor layer formed on a semiconductor substrate or an insulating substrate, a large number of electrodes are insulated and separated from the semiconductor substrate or the semiconductor layer by an insulating film and each wired approximately in parallel. When manufacturing a matrix-driven element having busbars, the ends of the individual electrode busbars are extended, and busbar connection wiring portions are provided for electrically connecting two electrode busbars so that the wiring meander continuously. The disconnection of the electrode bus bar and the short circuit between the electrode bus bar and the semiconductor substrate or between the electrode bus bar and the semiconductor layer can be prevented by conducting current between both ends of the wiring and passing current between the wiring end and the semiconductor substrate or the wiring end. 1. A method of manufacturing an electrode for a matrix-driven element, characterized in that the bus-bar connection wiring section is removed after being inspected by passing current between the bus-bar connection wiring section and the semiconductor layer. 2. The removal of the busbar connection wiring portion is performed by wet etching or dry etching.
A method for manufacturing electrodes of a matrix-driven element as described in . 3. The method of manufacturing an electrode for a matrix-driven element according to claim 1, wherein the removal of the busbar connection wiring portion is performed by cutting the semiconductor substrate or the semiconductor layer. 4. The electrode manufacturing method for a matrix-driven element according to claim 1, wherein the busbar connection wiring portion is provided in a dicing area of the semiconductor substrate or the semiconductor layer.