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JPS5953638B2 - Three-value logic storage method using Josephson junction elements - Google Patents
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JPS5953638B2 - Three-value logic storage method using Josephson junction elements - Google Patents

Three-value logic storage method using Josephson junction elements

Info

Publication number
JPS5953638B2
JPS5953638B2 JP52143187A JP14318777A JPS5953638B2 JP S5953638 B2 JPS5953638 B2 JP S5953638B2 JP 52143187 A JP52143187 A JP 52143187A JP 14318777 A JP14318777 A JP 14318777A JP S5953638 B2 JPS5953638 B2 JP S5953638B2
Authority
JP
Japan
Prior art keywords
current
josephson junction
junction element
persistent
write
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP52143187A
Other languages
Japanese (ja)
Other versions
JPS5475238A (en
Inventor
信也 蓮尾
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP52143187A priority Critical patent/JPS5953638B2/en
Publication of JPS5475238A publication Critical patent/JPS5475238A/en
Publication of JPS5953638B2 publication Critical patent/JPS5953638B2/en
Expired legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/44Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using super-conductive elements, e.g. cryotron

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)

Description

【発明の詳細な説明】 本発明は、ジョセフソン接合素子を含む超伝導電流ルー
プの永久電流状態を3値論理に対応させたジョセフソン
接合素子による3値論理記憶方式に関するものである。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a ternary logic storage system using a Josephson junction element in which the persistent current state of a superconducting current loop including the Josephson junction element corresponds to ternary logic.

現在の電子計算機等に於いては、2値論理に基いて演算
や情報記憶が行なわれているのが一般的である。
In current electronic computers, calculations and information storage are generally performed based on binary logic.

このような2値論理による場合は、スイッチのオン、オ
フを2進数の“l”、“o’’に対応させることを基本
としているもので、2値論理による情報記憶手段として
、ジョセフソン接合素子を用いることも知られている。
このジョセフソン接合素子を用いた記憶手段は、高速動
作、高密度化及び極低消費電力化が可能である利点があ
り、例えば第1図に示すように、バイアス線BLにバイ
アス電流IBを流して書込線M」に書込電流1wを流す
と、ジョセフソン接合素子J1側よりジョセフソン接合
素子J2側に多く電流が流れ、バイアス電流IBを零と
することにより実線矢印方向の永久電流がジョセフソン
接合素子J1、J2を含む超伝導電流ループLPに流れ
ることになる。又書込電流1wの方向を反対にすれば、
点線矢印方向に永久電流が流れることになる。従つて永
久電流の方向を2進数の“1’’、““0’’に対応さ
せることにより2値論理による記憶を行なうことができ
る。
In the case of such binary logic, the on/off state of a switch is basically associated with binary numbers "l" and "o", and Josephson junctions are used as information storage means using binary logic. It is also known to use elements.
Memory means using this Josephson junction element has the advantage of being capable of high-speed operation, high density, and extremely low power consumption. For example, as shown in FIG. 1, a bias current IB is passed through a bias line BL. When a write current of 1 W is applied to the write line M, more current flows from the Josephson junction element J1 side to the Josephson junction element J2 side, and by setting the bias current IB to zero, the persistent current in the direction of the solid line arrow increases. The superconducting current loop LP includes Josephson junction elements J1 and J2. Also, if the direction of the write current 1w is reversed,
A persistent current will flow in the direction of the dotted arrow. Therefore, by making the direction of the persistent current correspond to the binary numbers "1" and "0", it is possible to perform storage using binary logic.

そして読出線RLに接続したジョセフソン接合素子J3
を超伝導電流ループLPに近接配置することにより、永
久電流の方向に対応して読取りを行なうことができる。
3値論理は、前述の如き2値論理に比較して、論理回路
や記憶回路は次のような利点を有するものである。
And Josephson junction element J3 connected to readout line RL
By placing the superconducting current loop close to the superconducting current loop LP, readings can be taken corresponding to the direction of the persistent current.
Three-value logic has the following advantages in terms of logic circuits and memory circuits compared to the above-mentioned two-value logic.

(1)同じ情報量の処理の為に必要なディジット数が少
なく、高速処理が可能である。
(1) The number of digits required to process the same amount of information is small, and high-speed processing is possible.

(2)同じ伝送媒体に対して利用効率が高い。(2) High utilization efficiency for the same transmission medium.

(3)記憶密度が高い。しかし、前述の如き利点を有す
るにも拘らず3値論理回路が殆んど実用化されていない
のは、トフ ランジスタやダイオードの組合せにより3
値論理の処理を行なわせようとすると、回路構成が非常
に複雑になり、前述の利点を充分に発揮することができ
ない為である。
(3) High storage density. However, despite having the above-mentioned advantages, ternary logic circuits are hardly ever put into practical use.
This is because, if value logic processing were to be performed, the circuit configuration would become extremely complicated, and the above-mentioned advantages could not be fully demonstrated.

本発明は、ジョセフソン接合素子を含む超伝導5 電流
ループの永久電流の方向及び永久電流零の状態により3
値の情報を記憶させ、且つその3値情報の読出しを行な
わせることを目的とするもので7フーある。
The present invention is based on the direction of persistent current in a superconducting current loop containing a Josephson junction element and the state of zero persistent current.
The purpose is to store value information and read out the ternary value information, and there are 7 types.

以下実施例について詳細に説明する。第2図は本発明の
実施例の説明図であり、ジヨセフソン接合素子Jl,J
2を含む超伝導電流ループLPにはバイアス線BLが接
続され、書込線WLがジヨセフソン接合素子Jl,J2
に近接配置され、読出線RLに接続されたジヨセフソン
接合素子J3,J4が超伝導電流ループLPに近接配置
され、ジヨセフソン接合素子J3,J4にはそれぞれ負
荷抵抗Rl,R2が接続されている。この超伝導電流ル
ープLP内に永久電流が無い状態と、永久電流が実線方
向又は点線方向に流れている状態とを3値情報に対応さ
せるものである。書込時について説明すると、先ず前の
記憶情報を消去する必要がある為、バイアス線BLにり
セツト電流を流すものである。このりセツト電流IBl
はジヨセフソン接合素子Jl,J2の臨界電流1C1,
IC2の和の(1c1+IO2)より大きくするもので
あり、その場合ジヨセフソン接合素子Jl,J2は通常
同じ構成であるから、IBl〉210=Icl+Ic2
のりセツト電流1B1を流す。それによつてジヨセフソ
ン接合素子Jl,J2は電圧状態となり、このりセツト
電流1B1を零とすると、超伝導電流ループLPの永久
電流は殆んど零となる。りセツト電流1B1を零とした
後、実際にジヨセリフソン接合素子Jl,J2が零電圧
状態になるまでの時間は、超伝導電流ループLPのイン
ダクタンスをL1ジヨセフソン接合素子Jl,J2の電
圧状態に於ける抵抗をRa,Rbとすると、L/(Ra
+Rb)で決まり、例えばRa=Rb一0.5Ω,L=
100…とすると、V(Ra+Rb)=100pSとな
る。
Examples will be described in detail below. FIG. 2 is an explanatory diagram of an embodiment of the present invention, in which Josephson junction elements Jl, J
A bias line BL is connected to the superconducting current loop LP including J2, and a write line WL is connected to the Josephson junction elements Jl, J2
Josephson junction elements J3 and J4, which are arranged close to the superconducting current loop LP and connected to the readout line RL, are arranged close to the superconducting current loop LP, and load resistors Rl and R2 are connected to the Josephson junction elements J3 and J4, respectively. The state where there is no persistent current in the superconducting current loop LP and the state where the persistent current flows in the direction of the solid line or the direction of the dotted line are made to correspond to three-value information. When writing, it is first necessary to erase the previous stored information, so a set current is passed through the bias line BL. This reset current IBL
is the critical current 1C1 of Josephson junction element Jl, J2,
The sum of IC2 is (1c1+IO2). In that case, Josephson junction elements Jl and J2 usually have the same configuration, so IBl>210=Icl+Ic2
A set current 1B1 is applied. As a result, Josephson junction elements Jl and J2 are brought into a voltage state, and when the set current 1B1 is made zero, the persistent current of the superconducting current loop LP becomes almost zero. After setting the reset current 1B1 to zero, the time until the Josephson junction elements Jl, J2 actually reach the zero voltage state is calculated by changing the inductance of the superconducting current loop LP to the voltage state of the Josephson junction elements Jl, J2. Letting the resistances be Ra and Rb, L/(Ra
+Rb), for example, Ra=Rb-0.5Ω, L=
100..., then V(Ra+Rb)=100 pS.

従つてりセツト電流1B1を零とした後、L/(Ra+
Rb)以上の時間が経過してから書込みを行なうもので
あり、バイアス線BLにバイアス電流1B2を流して書
込線WLに,″11,″0″,′−1″の3値情報に対
応した書込電流1wを流すものである。この場合のバイ
アス電流1B2は、書込電流1wが零の状態に於いて、
ジヨセフソン接合素子Jl,J2の臨界電流1C1,1
C2よりも小さい値とするものである。
Therefore, after setting the current 1B1 to zero, L/(Ra+
Writing is performed after a period of time greater than Rb) has elapsed, and a bias current of 1B2 is applied to the bias line BL, and the write line WL corresponds to the three-value information of "11,""0", and '-1". A write current of 1 W is applied. In this case, the bias current 1B2 is, when the write current 1w is zero,
Critical current of Josephson junction element Jl, J2 1C1,1
This value is set to be smaller than C2.

第3図は前述のりセツト電流1B1、バイアス電流1B
2及び書込電流1wの波形の一例を示すもので、書込電
流1wは、3値情報が17のとき実線の如く正極性とす
ると、″01のときは点線の如く零、“−1”のときは
鎖線の如く負極性とするものである。それによつて超伝
導電流ループLPには、永久電流が実線方向、零、点線
方向の3種の状態となり、3値情報が記憶される。第4
図は書込電流1wによるジヨセフソン接合素子Jl,J
2の臨界電流1C1,102の変化を示すもので、バイ
アス電流B2を流した状態で書込電流[wが零であると
、そのバイアス電流IB2はジヨセフソン接合素子Jl
,J2にほぼ均等に分流し、そのときの状態はA点とな
る。1″の情報による書込電流1wが流れると、BIB
2lB2の状態となり、1C1く一,102〉一となる
から、ジヨセフソン接合素子J1は電圧状態へ遷移する
Figure 3 shows the above-mentioned reset current 1B1 and bias current 1B.
2 and write current 1w. When the ternary information is 17, the write current 1w is positive as shown by the solid line, and when it is "01" it is zero as shown by the dotted line, and "-1". When , the polarity is negative as shown by the chain line.As a result, the persistent current is in three states in the direction of the solid line, zero, and in the direction of the dotted line in the superconducting current loop LP, and ternary information is stored. Fourth
The figure shows a Josephson junction element Jl, J with a write current of 1 W.
2 shows the change in critical current 1C1, 102 of 2. If the write current [w is zero with bias current B2 flowing, the bias current IB2 is
, J2 almost equally, and the state at that time is point A. When a write current of 1w flows based on information of 1″, BIB
Since the state becomes 21B2 and 1C1×1,102>1, Josephson junction element J1 transitions to the voltage state.

又“−1″の情報による書込電流1wがIB2流れると
、C点の状態となり、ICl〉−,IB2IC1〈−と
なるから、ジヨセフソン接合素子J2は電圧状態へ遷移
する。
Further, when the write current 1w based on the information of "-1" flows through IB2, the state is at point C and ICl>-, IB2IC1<-, so Josephson junction element J2 transitions to the voltage state.

第5図A,bはジヨセフソン接合素子Jl,J2の電流
11,12対電圧Vl,2特性を示すもので、書込電流
1w=″11のとき、ジヨセフソン接合素子J1はA1
点から電圧状態に遷移する。
Figures 5A and 5B show the current 11, 12 versus voltage Vl, 2 characteristics of Josephson junction elements Jl, J2. When the write current 1w = "11, Josephson junction element J1 is A1
transition from point to voltage state.

しかし、ジヨセフソン接合素子J2が並列に接続されて
いるので、ジヨセフソン接合素子J1だけ電圧状態にと
どまることができず、矢印方向に動作点が移動してA′
点に達する。それと同時に、ジヨセフソン接合素子Jl
,J2を流れる電流の和はバイアス電流1B2でなけれ
ばならないことにより、ジヨセフソン接合素子J2はA
2点からAIへ移動し、その結果11冫0,12≧IB
2となる。その後バイアス電流1B2が零になると、1
1,12はほぼIB2/2だけ減少するので、11)−
1B2/212冫1B2/2となる。従つて第2図の実
線矢印方向に永久電流が流れることになる。又1−1″
の情報による書込電流1wの場合は、前述の動作と反対
の動作により、第2図の点線矢印方向に永久電流が流れ
、又″ゲの情報に対しては、書込電流1wが零であるの
で、永久電流は零となる。
However, since the Josephson junction element J2 is connected in parallel, only the Josephson junction element J1 cannot remain in the voltage state, and the operating point moves in the direction of the arrow A'
Reach the point. At the same time, Josephson junction element Jl
, J2 must be a bias current of 1B2, so Josephson junction element J2 has A
Move from 2 points to AI, resulting in 11x0,12≧IB
It becomes 2. After that, when the bias current 1B2 becomes zero, 1
1,12 decreases by approximately IB2/2, so 11)-
1B2/212 1B2/2. Therefore, a persistent current flows in the direction of the solid arrow in FIG. Also 1-1″
In the case of a write current of 1 w due to the information of , a persistent current flows in the direction of the dotted line arrow in Fig. 2 due to the operation opposite to the above-mentioned operation, and for the information of ``, the write current of 1 w is zero. Therefore, the persistent current becomes zero.

読出しは、読出線RLに読出電流1sを流すことにより
行なわれるもので、ジヨセフソン接合素子J3,J4の
臨界電流が超伝導電流ループLPに流れる永久電流によ
り、第4図について説明したと同様の関係で変化するの
で、永久電流の状態によつてジヨセフソン接合素子J3
,J4の何れか一方が電圧状態になるか又は而方共零電
圧状態のままであるかが決まる。
Readout is performed by passing a readout current of 1 s through the readout line RL, and the same relationship as explained in FIG. Therefore, depending on the state of persistent current, Josephson junction element J3
, J4 becomes a voltage state or both remain in a zero voltage state.

その結果電流1Rの方向が実線矢印か又は点線矢印か又
は零となる。従つて読出線に読出電流1sを流して電流
1Rの状態により3値情報を読出すことができる。なお
電圧として読出信号を取出す場合は、電流Rの流れる線
に抵抗を挿入すれば良いことになる。第6図は第2図に
示すジヨセフソン接合素子を用いた記憶素子の概略斜視
図を示し、第2図の符号と同一符号は同一部分を示すも
のである。なお各線の交叉部分及び重合部分は周知゜の
クロスオーバ技術等により相互に絶縁されているもので
ある。以上説明したように、本発明は、2個のジヨセフ
ソン接合素子Jl,J2を含む超伝導電流ループLPを
有する記憶素子に、先ずジヨセフソン結合素子Jl,J
2の臨界電流の和より大きいりセツト電流B1を流し、
それによつて既に記憶されている内容を消去し、次にジ
ヨセフソン接合素子Jl,J2の臨界電流より小さいバ
イアス電流IB2を流し、且つ書込線WLに3値論理情
報に対応して、正、負、零の何れかの書込電流1wを流
し、それによつて超伝導電流ループLPに右回り、左回
り,零の何れかの状態の永久電流が流れるようにして、
それらの3種の状態を3値論理情報として記憶させるも
のであり、その3値論理情報は、超伝導電流ループLP
に近接配置した2個のジヨセフソン接合素子J3,J4
をゲートとして非破壊で読出すことができる。従つて、
ジヨセフソン接合素子を用いた記憶素子に3値論理情報
を記憶させることができ、ジヨセフソン接合素子を用い
た利点と共に3値論理を用いた利点とを発揮させること
ができるものである。
As a result, the direction of the current 1R becomes either a solid arrow, a dotted arrow, or zero. Therefore, by flowing a read current 1 s through the read line, ternary information can be read out depending on the state of the current 1 R. Note that if the read signal is to be extracted as a voltage, a resistor may be inserted into the line through which the current R flows. FIG. 6 shows a schematic perspective view of a memory element using the Josephson junction element shown in FIG. 2, and the same reference numerals as those in FIG. 2 indicate the same parts. Note that the crossing portions and overlapping portions of each line are insulated from each other by a well-known crossover technique or the like. As explained above, the present invention first provides a memory element having a superconducting current loop LP including two Josephson junction elements Jl, J2.
A reset current B1 larger than the sum of the critical currents of 2 and 2 is applied;
Thereby, the contents already stored are erased, and then a bias current IB2 smaller than the critical current of Josephson junction elements Jl and J2 is applied, and the write line WL is set to have positive and negative values corresponding to the three-value logic information. , zero, and a write current of 1 W is caused to flow in the superconducting current loop LP, thereby causing a permanent current to flow in the superconducting current loop LP in any of the states of clockwise rotation, counterclockwise rotation, and zero.
These three states are stored as three-value logic information, and the three-value logic information is stored in the superconducting current loop LP.
Two Josephson junction elements J3 and J4 placed close to each other
can be read out non-destructively by using it as a gate. Therefore,
It is possible to store ternary logic information in a memory element using a Josephson junction element, and it is possible to bring out the advantages of using a Josephson junction element as well as the advantages of using ternary logic.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は従来のジヨセフソン接合素子を用いた記憶素子
の回路、第2図は本発明の実施例の回路、第3図は書込
動作説明用波形図、第4図はジヨセフソノ接合素子の臨
界電流の書込電流による依存特性説明図、第5図はジヨ
セフソン接合素子の電流対電圧特性による動作点の説明
図、第6図は第2図に対応する実施例の概略斜視図であ
る。
Figure 1 shows a circuit of a memory element using a conventional Josephson junction element, Figure 2 shows a circuit according to an embodiment of the present invention, Figure 3 is a waveform diagram for explaining a write operation, and Figure 4 shows the criticality of a Josephson junction element. FIG. 5 is a diagram illustrating the dependence of current on write current; FIG. 5 is a diagram illustrating the operating point according to the current vs. voltage characteristic of a Josephson junction element; and FIG. 6 is a schematic perspective view of an embodiment corresponding to FIG. 2.

Claims (1)

【特許請求の範囲】[Claims] 1 2個のジョセフソン接合素子を含む超伝導電流ルー
プを有する記憶素子に於いて、前記ジョセフソン接合素
子の臨界電流の和より大きいリセット電流を前記超伝導
電流ループに流して永久電流による記憶情報を消去し、
次に前記ジョセフソン接合素子の臨界電流より小さいバ
イアス電流を流し、且つ前記ジョセフソン接合素子に近
接配置した書込線に、3値論理情報に対応した書込電流
を流し、それによつて前記超伝導電流ループに右回りか
左回りの永久電流を流すか又は永久電流無しの3種の何
れかの状態として、3値論理情報を記憶することを特徴
とするジョセフソン接合素子を用いた3値論理記憶方式
1. In a memory element having a superconducting current loop including two Josephson junction elements, a reset current larger than the sum of the critical currents of the Josephson junction elements is passed through the superconducting current loop to store information by persistent current. Erase the
Next, a bias current smaller than the critical current of the Josephson junction element is caused to flow, and a write current corresponding to the ternary logic information is caused to flow through a write line disposed close to the Josephson junction element, whereby the A three-value device using a Josephson junction element, which stores three-value logic information as one of three states: a clockwise or counterclockwise persistent current flows in a conduction current loop, or no persistent current. Logical storage method.
JP52143187A 1977-11-29 1977-11-29 Three-value logic storage method using Josephson junction elements Expired JPS5953638B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP52143187A JPS5953638B2 (en) 1977-11-29 1977-11-29 Three-value logic storage method using Josephson junction elements

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP52143187A JPS5953638B2 (en) 1977-11-29 1977-11-29 Three-value logic storage method using Josephson junction elements

Publications (2)

Publication Number Publication Date
JPS5475238A JPS5475238A (en) 1979-06-15
JPS5953638B2 true JPS5953638B2 (en) 1984-12-26

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JP52143187A Expired JPS5953638B2 (en) 1977-11-29 1977-11-29 Three-value logic storage method using Josephson junction elements

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JPS5475238A (en) 1979-06-15

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