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JPS601780B2 - two-way switch - Google Patents
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JPS601780B2 - two-way switch - Google Patents

two-way switch

Info

Publication number
JPS601780B2
JPS601780B2 JP5197079A JP5197079A JPS601780B2 JP S601780 B2 JPS601780 B2 JP S601780B2 JP 5197079 A JP5197079 A JP 5197079A JP 5197079 A JP5197079 A JP 5197079A JP S601780 B2 JPS601780 B2 JP S601780B2
Authority
JP
Japan
Prior art keywords
control signal
electrodes
source
signal source
capacitance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP5197079A
Other languages
Japanese (ja)
Other versions
JPS55143836A (en
Inventor
俊幸 鈴木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP5197079A priority Critical patent/JPS601780B2/en
Publication of JPS55143836A publication Critical patent/JPS55143836A/en
Publication of JPS601780B2 publication Critical patent/JPS601780B2/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/6871Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
    • H03K17/6874Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor in a symmetrical configuration

Landscapes

  • Electronic Switches (AREA)

Description

【発明の詳細な説明】 本発明は交流電力を制御する双方向スイッチ、特にIG
FET(絶縁ゲート形電界効果トランジタ)を用いた双
方向スイッチに関する。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a bidirectional switch for controlling AC power, especially an IG
This invention relates to a bidirectional switch using an FET (insulated gate field effect transistor).

より具体的には、本スイッチは、例えば、商用電源で動
作するモータ,照明器具などの制御に用いられる。IG
FETの1つであるMOSFETは集積化に通した素子
として研究開発され、電卓あるいはメモリー用の大規模
集積回路などに広く実用化されている。集積回路に用い
られるMOSFETはドレィン耐圧数10V,ドレィン
電流10数mA以下の小電力な素子である。
More specifically, this switch is used, for example, to control motors, lighting equipment, etc. that operate on commercial power. I.G.
MOSFET, which is one type of FET, has been researched and developed as an element that can be integrated, and has been widely put into practical use in large-scale integrated circuits for calculators and memory. MOSFETs used in integrated circuits are low-power elements with a drain breakdown voltage of 10V and a drain current of 10-odd milliamps or less.

しかしIGFETは、ドレィン電流の温度係数が負であ
り熱暴走による破壊がない、少数キャリアを用いないの
で高速なスイッチング可能である、入力インピーダンス
が高くゲート駆動電力が小さくて済むなどの利点を有し
ており大軍力のスイッチング素子として期待されている
However, IGFETs have advantages such as the temperature coefficient of the drain current is negative, so there is no destruction due to thermal runaway, high-speed switching is possible because they do not use minority carriers, and the input impedance is high and gate drive power is low. It is expected to be used as a switching element for a large military force.

このようなMOSFETの大電力化への要求に答えて、
高ドレィン耐圧,高ドレィン電流が得られる素子として
オフセットゲート形のMOSFETやVMOSFETが
研究開発され、ドレィン耐圧200V以上、オン抵抗数
Q以下の素子が実用化されつつある。
In response to the demand for higher power MOSFETs,
Offset gate type MOSFETs and VMOSFETs have been researched and developed as devices that can obtain high drain breakdown voltages and high drain currents, and devices with drain breakdown voltages of 200 V or more and on-resistance numbers Q or less are being put into practical use.

以下、第1図には制御信号電圧として交流電源の振幅よ
り大きな正,負の電圧を用いてスイッチのオン状態を制
御する従来例について、第3図にはトランジスタの闇値
電圧の1坊音程度の一極性の電圧パルスを印放すること
によりパルス的に電力の供給を制御するスイッチの従来
例について述べる。
Below, Fig. 1 shows a conventional example in which the on-state of a switch is controlled using positive and negative voltages larger than the amplitude of the AC power source as control signal voltages, and Fig. 3 shows the dark value voltage of the transistor. A conventional example of a switch that controls the supply of power in a pulse manner by applying and releasing a voltage pulse of a certain degree of unipolarity will be described.

第1図はドレィン耐圧90V,オン状態30のVMOS
FETを2個用いて構成した双方向スイッチの従来例で
ある。
Figure 1 shows a VMOS with a drain breakdown voltage of 90V and an on state of 30V.
This is a conventional example of a bidirectional switch configured using two FETs.

第1図において2個のトランジスタTr,,Tr2のソ
ース電極1,5と基板電極4,8とが共通接続されてい
る。
In FIG. 1, source electrodes 1, 5 and substrate electrodes 4, 8 of two transistors Tr, Tr2 are commonly connected.

Tr,のドレィン電極3は振幅Vpの交流電源15の一
方の端子16と、Tr2のドレィン電極7は負荷12の
一方の端子13に接続されている。
The drain electrode 3 of the transistor Tr is connected to one terminal 16 of an AC power supply 15 having an amplitude of Vp, and the drain electrode 7 of the transistor Tr 2 is connected to one terminal 13 of the load 12.

Tr,,Tr2のゲート電極2,6は制御信号源9の一
方の端子1川こ接続されている。交流電源15、負荷1
2、および制御信号源9の各々の他方の端子17,14
,11‘ま共通接続されている。
The gate electrodes 2 and 6 of the Tr, Tr2 are connected to one terminal of the control signal source 9. AC power supply 15, load 1
2, and the other terminals 17 and 14 of each of the control signal source 9
, 11' are commonly connected.

第1図の従来例の動作原理を第2図を用いて説明する。
第2図のa図は、交流電源15の端子16が端子17に
対して正の電位差を持つ周期における等価回路である。
この場合Tr2のドレィン電極7と基板電極8とが形成
するp−n接合が順方向バイアスされるため、Tr2は
導通状態となる。従って第2図のa図に示すようにTr
,がスイッチ動作をする。今交流電源15の振幅をVp
とし、制御信号源9の出力電圧を端子10と端子11と
の電位差で定義する。 .第2図のa図はソースフオ
ロワ回路であるから、負荷12に交流の最大振幅Vpを
取り出すためには、制御信号源9の出力電圧Von,は
トランジスタの闇値をVtとするとVon,〉Vp+V
t ・・・・・・【1}を満
たす必要がる。
The operating principle of the conventional example shown in FIG. 1 will be explained using FIG. 2.
FIG. 2A shows an equivalent circuit in a period in which the terminal 16 of the AC power supply 15 has a positive potential difference with respect to the terminal 17.
In this case, the pn junction formed by the drain electrode 7 and substrate electrode 8 of Tr2 is forward biased, so Tr2 becomes conductive. Therefore, as shown in Figure 2 a, Tr
, performs a switch operation. Now the amplitude of AC power supply 15 is Vp
The output voltage of the control signal source 9 is defined as the potential difference between the terminals 10 and 11. .. Since the diagram a in FIG. 2 is a source follower circuit, in order to extract the maximum amplitude Vp of AC to the load 12, the output voltage Von of the control signal source 9 must be Von,〉Vp+V, where the dark value of the transistor is Vt.
t...It is necessary to satisfy [1}.

一方Tr,をオフ状態にするためには、制御信号源9の
出力電圧Voff,はVoH,<VT
・・・・・・【2)を滴せばよい。
On the other hand, in order to turn Tr, off, the output voltage Voff, of the control signal source 9 is VoH, <VT
...Just drop [2].

次に交流電源の端子17が端子16に対して正の電位差
を持つ周期を考える。
Next, consider a period in which the terminal 17 of the AC power supply has a positive potential difference with respect to the terminal 16.

この場合、Tr,のドレィン電極3と基板電極4が形成
するp−n接合が順方向バイアスされ、Tr.は導通状
態となる。
In this case, the pn junction formed by the drain electrode 3 and substrate electrode 4 of the Tr is forward biased, and the Tr. becomes conductive.

従って第1図の回路は、第2図のb図のように書き表わ
せる。
Therefore, the circuit of FIG. 1 can be expressed as shown in FIG. 2, b.

Tr2をオン状態にするためにはTr2のゲート電極6
とソース電極5との電位差がトランジスタの闇値Vt以
上になれば良いから、制御信号源9の出力電圧Vo&は
Vo〜>VT ・・・・・・
湖を満せば良い。
In order to turn on Tr2, the gate electrode 6 of Tr2 is
Since it is sufficient that the potential difference between the voltage and the source electrode 5 is equal to or higher than the dark value Vt of the transistor, the output voltage Vo& of the control signal source 9 is Vo~>VT...
Just fill the lake.

一方Tr2をオフ状態にするためには、制御信号源9の
出力電圧VoH2をVoff2<VT−Vp
・・・・・・{4}に選ぶ必要がある
On the other hand, in order to turn Tr2 off, the output voltage VoH2 of the control signal source 9 must be set to Voff2<VT-Vp.
・・・・・・You need to choose {4}.

m〜‘4}式より交流全周期に渡ってTて.,Tr2を
オン状態にするためには制御信号源9の出力電圧をVo
n>Vt+Vp ・・・・・・
‘51に、またTr,,Tr2をオフ状態にするために
は制御信号源9の出力電圧をVoff<Vt−Vp
・・・…側に選ぶ必要がある。
m~'4} formula, T over the entire AC cycle. , Tr2 is turned on, the output voltage of the control signal source 9 is set to Vo.
n>Vt+Vp ・・・・・・
'51, and in order to turn off Tr, Tr2, the output voltage of the control signal source 9 is set to Voff<Vt-Vp.
...You need to choose a side.

即ち第1図の従釆列においては制御信号源の出力電圧と
して、交流電源15の振幅より大きな正負の電圧を必要
とする大きな欠点があった。
That is, the slave column shown in FIG. 1 has a major drawback in that it requires a positive and negative voltage larger than the amplitude of the AC power source 15 as the output voltage of the control signal source.

次にパルストランスを用い、制御信号源と交流電源回路
との絶縁分離を計った従来例について第3図を用いて述
べる。第3図の従釆例においては、第1図の従来例に比
べて、Tr,,Tr2のゲート電極2,6とソース電極
1,5との間に制御信号源からの出力電圧がパルストラ
ンス18を介して印加される所が異なつている。
Next, a conventional example in which a pulse transformer is used to isolate and separate the control signal source and the AC power supply circuit will be described with reference to FIG. In the dependent example shown in FIG. 3, compared to the conventional example shown in FIG. The difference is that the voltage is applied via 18.

第1図の場合と同様に交流電源15の端子16が正のと
きはTr2が、負のときはTr2が各々のスイッチ機能
を果す。
As in the case of FIG. 1, when the terminal 16 of the AC power supply 15 is positive, Tr2 performs the switching function, and when it is negative, Tr2 performs the respective switch functions.

パルストランス18の巻線比を仮りに1とすると制御信
号源9の出力電圧はTr,,Tr2のゲート電極2,6
とソース電極1,5との間に直接加わる。
Assuming that the winding ratio of the pulse transformer 18 is 1, the output voltage of the control signal source 9 is equal to that of the gate electrodes 2 and 6 of Tr2.
and the source electrodes 1 and 5.

従って、交流の任意の位相においてTr,,Tr2をオ
ン状態にするためには制御信号源9の出力電圧はトラン
ジスタの閥値V比〆上あれば良い。
Therefore, in order to turn on the transistors Tr, .

一方交流の全周期にわたってTr,,Tr2をオフ状態
にするにも、制御信号源9の出力電圧はトランジスタの
闇値Vtより小さければ良い。第3図の従来例はパルス
トランスを用いているため、パルストランスの遮断周波
数で決まる時間より長い周期にわたってTr,,Tr2
をオン状態に保つことはできない。
On the other hand, in order to keep the Tr, . Since the conventional example shown in Fig. 3 uses a pulse transformer, Tr,, Tr2
cannot be kept on.

即ちTr,,Tr2はパルス的にしかオン状態を持ち得
ない。
That is, Tr, Tr2 can only be turned on in a pulsed manner.

しかし、負荷12の周波数応答が遅い場合、ある期間内
にわたってTr,,Tr2がパルス的にオン状態を繰り
返えしても実質的には常にTr,,Tr2がオン状態に
なっていると見倣せる。このように第3図の従来例は、
第1図の従来例に比べて制御信号源の出力電圧が高々ト
ランジスタの閥値Vtの1ぴ音程度ですみ、なおかつ交
流回路と、制御信号源との絶縁分離が可能であるという
利点がある反面、パルストランスという高価で、小形,
軽量化が困難な部品を使う必要があるという大きな欠点
があった。本発明の目的は上述の欠点を取り除き、小形
,軽量化特に/・ィブリット集積化に通した低価格な交
流電力を制御する双方向スイッチを提供することにある
However, if the frequency response of the load 12 is slow, even if Tr,, Tr2 are repeatedly turned on in a pulsed manner over a certain period, it is assumed that Tr,, Tr2 are essentially always in the on state. I can imitate it. In this way, the conventional example shown in Fig. 3 is
Compared to the conventional example shown in Fig. 1, the output voltage of the control signal source is at most 1 ping of the threshold value Vt of the transistor, and it has the advantage that it is possible to isolate the AC circuit and the control signal source. On the other hand, pulse transformers are expensive, small,
The major drawback was that it required the use of parts that were difficult to reduce weight. SUMMARY OF THE INVENTION The object of the present invention is to eliminate the above-mentioned drawbacks and to provide a bidirectional switch for controlling alternating current power that is small, lightweight, and especially low-cost through hybrid integration.

本発明によれば同一導電形の2個の絶縁ゲート形電界効
果トランジスタのゲート電極同志,ソース電極同志,基
板電極同志を接続し、該ソース電極と該基板電極を接続
し該ゲート電極と該ソース電極を抵抗で接続し、該ゲー
ト電極に静電容量を接続して制御信号源の一端を接続す
る入力端子とし、二つのドレィン端子を被制御端子とす
る双方向スィッ升こおいて、前記被制御様子間に接続さ
れた交流電源と負荷との中点と該制御信号源の他の一端
との間に制御用パルス信号を通すための静電容量あるい
はこれと等価の浮遊容量を設けたことを特徴とする双方
向スイッチを得ることができる。
According to the present invention, the gate electrodes, source electrodes, and substrate electrodes of two insulated gate field effect transistors of the same conductivity type are connected together, and the source electrode and the substrate electrode are connected, and the gate electrode and the source electrode are connected together. A bidirectional switch is provided in which the electrodes are connected with a resistor, a capacitance is connected to the gate electrode to serve as an input terminal to which one end of the control signal source is connected, and two drain terminals are used as controlled terminals. A capacitance or an equivalent stray capacitance for passing the control pulse signal is provided between the midpoint of the AC power supply connected between the control mode and the load and the other end of the control signal source. You can get a two-way switch featuring:

・以下本発明の動作原理を第4図に示した本発明の一実
施例を基に説明する。
- The operating principle of the present invention will be explained below based on an embodiment of the present invention shown in FIG.

第4図は、2個の絶縁ゲート形電界効果トランジスタと
してnチャンネルのMOS形電界効果トランジスタを用
いた場合の本発明の一実施例である。
FIG. 4 shows an embodiment of the present invention in which n-channel MOS type field effect transistors are used as two insulated gate type field effect transistors.

トランジスタTr,,Tr2のゲート電極2,6同志,
ソース電極同志1,5基板電極4,8同志が接続されて
いる。トランジスタTr,のドレィン電極3は交流電源
15(例えば5位セ100V)の一端16に、トランジ
スタTr2のドレィン電極7は負荷12の一端13に各
々接続されている。
Gate electrodes 2 and 6 of transistors Tr, Tr2,
Source electrodes 1 and 5 and substrate electrodes 4 and 8 are connected. The drain electrode 3 of the transistor Tr is connected to one end 16 of an AC power supply 15 (for example, 100V on a fifth circuit), and the drain electrode 7 of the transistor Tr2 is connected to one end 13 of a load 12.

ソース電極1,5は基板電極4,8と接続されている。
ゲート電極2,6とソース電極1,5とは抵抗19を介
して接続されている。
Source electrodes 1 and 5 are connected to substrate electrodes 4 and 8.
Gate electrodes 2 and 6 and source electrodes 1 and 5 are connected via a resistor 19.

交流電源15の他の一端17と負荷12他の」端14が
接続されている。
The other end 17 of the AC power source 15 and the other end 14 of the load 12 are connected.

ゲート電極2,6と制御信号源9の一端1川ま静電容量
20を介して接続されており、交流電源15の他の一端
17と制御信号源9の他の一端1 1とは静電容量21
を介して接続されている。抵抗19、静電容量20,2
1および制御信号源9の直列接続で決まるインピーダン
スは十分高く選ぶことができ、この通路を通っての交流
電力の漏洩は無視できる。
The gate electrodes 2 and 6 are connected to one end of the control signal source 9 via a capacitance 20, and the other end 17 of the AC power supply 15 and the other end 11 of the control signal source 9 are connected to each other via an electrostatic capacitance 20. Capacity 21
connected via. Resistance 19, capacitance 20,2
The impedance determined by the series connection of 1 and the control signal source 9 can be chosen sufficiently high that leakage of AC power through this path can be ignored.

例えば抵抗19を100KQ静電容量20,21を各々
50倣Fとすると商用周波数5皿zに対する上述の通路
のインピーダンスはほぼ静電容量20,21で決まり、
1巡○と十分大きな値となる。通常負荷のインピーダン
スは十分小さいので、制御信号源9から回路を見込んだ
インピーダンスは主に、静電容量21,交流電源15,
Tr,のドレイン電極3とソース電極1間のいわゆるド
レィン容量,抵抗19,静電容量20が直列接続された
閉回路で決まる。
For example, if the resistor 19 is 100 KQ and the capacitances 20 and 21 are each 50 F, the impedance of the above-mentioned path for commercial frequency 5 plates z is approximately determined by the capacitances 20 and 21,
It is a sufficiently large value, ○ for 1 round. Normally, the impedance of the load is sufficiently small, so the impedance looking into the circuit from the control signal source 9 is mainly the capacitance 21, AC power supply 15,
The so-called drain capacitance between the drain electrode 3 and source electrode 1 of the Tr, a resistance 19, and a capacitance 20 are determined by a closed circuit connected in series.

従って、制御信号は、主として、この閉回路を流れると
考えられる。次にTr,のドレィン容量を見積って見る
。Tr,,Tr2がオフ状態のとき基板電極4,8は、
ドレイン電極3,7と基板電極4,8との接合の整流作
用により交流電線の電圧振幅Vpに充電されている。充
電の向きは、Tr,,Tr2のドレィン接合を逆バイア
スする向きに起こるので、交流電源15から正負に変わ
る電圧が各々のドレィン接合に加わっても、接合が順バ
イアスされることはない。
Therefore, it is considered that the control signal mainly flows through this closed circuit. Next, estimate the drain capacity of Tr. When Tr,, Tr2 are in the off state, the substrate electrodes 4 and 8 are
Due to the rectifying action of the junction between the drain electrodes 3, 7 and the substrate electrodes 4, 8, the voltage amplitude Vp of the AC wire is charged. Since charging occurs in a direction that reverse biases the drain junctions of Tr, Tr2, even if voltages that change from positive to negative are applied to each drain junction from the AC power supply 15, the junctions will not be forward biased.

この時ドレィン容量は交流電源15の電圧変化に応じて
変化するがその範囲は大体、ドレィン接合にOVからV
pの電圧を加えた時起こるドレイン容量の変化に等しく
、1政F程度から数10のFの範囲である。前述の閉回
路において、制御信号9の出力電圧が、抵抗19の両端
にそのパルス波形を変えることなく表われるためには、
静電容量20,21、該ドレィン容量の調和平均と抵抗
19とで決まる時定数が、制御信号源9からTr,,T
r2をオン状態にするため印加される制御用パルス信号
のパルス幅に比べて十分大きければ良い。
At this time, the drain capacitance changes depending on the voltage change of the AC power supply 15, but the range is generally from OV to V at the drain junction.
It is equivalent to the change in drain capacitance that occurs when a voltage of p is applied, and ranges from about one F to several tens of F. In the aforementioned closed circuit, in order for the output voltage of the control signal 9 to appear across the resistor 19 without changing its pulse waveform,
A time constant determined by the capacitances 20 and 21, the harmonic mean of the drain capacitances, and the resistance 19 is transmitted from the control signal source 9 to Tr, , T
It only needs to be sufficiently larger than the pulse width of the control pulse signal applied to turn r2 on.

抵抗19を10皿cr,ドレィン容量を最悪ケースとし
て1のFに見積ると、前記時定数は、1仏Secとなる
ので、パルス幅は0.5仏sec以下に選べば十分であ
る。
If the resistor 19 is estimated to be 10 Cr and the drain capacitance is estimated to be 1 F in the worst case, the time constant will be 1 French sec, so it is sufficient to select the pulse width to be 0.5 French sec or less.

別の見方をすれば、前述のように時定数を選ぶことは、
制御信号の周波数では、静電容量のインピーダンスに比
べて抵抗19のインピーダンスが十分大きい、即ち開放
と見なせるということである。このような状態では、制
御信号源9のパルス出力電圧は静電容量21,20、T
r,のゲート入力容量Tr,のドレィン容量に分割され
る。通常、Tr,のゲート入力容量に比べ静電容量21
,20は十分大きく、Tr,のドレィン客量もその変化
を平均して見ればゲート入力容量よりも十分大きいので
、パルス出力電圧はほとんどゲートに加わるとみなせる
。Tr,,Tr2をオン状態にするには、ゲート電極2
,6とソース電極1,5との間にトランジスタの関値V
tの10倍程度の十分大きな電圧を加えれば良い。
From another perspective, choosing the time constant as described above is
At the frequency of the control signal, the impedance of the resistor 19 is sufficiently large compared to the impedance of the capacitance, that is, it can be considered as open circuit. In such a state, the pulse output voltage of the control signal source 9 is equal to the capacitance 21, 20, T
It is divided into the gate input capacitance of r, and the drain capacitance of Tr. Normally, the capacitance is 21 compared to the gate input capacitance of a Tr.
, 20 are sufficiently large, and the drain capacity of the Tr is also sufficiently larger than the gate input capacitance when its changes are considered on average, so it can be considered that the pulse output voltage is almost applied to the gate. To turn on Tr,, Tr2, gate electrode 2
, 6 and the source electrodes 1, 5.
It is sufficient to apply a sufficiently large voltage of about 10 times t.

従って、VtをIV程度とすると、制御信号源9の出力
電圧は10V程度であれば十分である。ところで、前述
の時定数が余り大きくなく、なおかつ制御信号源9のデ
ューティ比Dが大きい時は、CR回路の性質により、T
r,,Tr2のゲートに加わる信号は、制御信号源の出
力電圧に負の直流電圧が重畳した波形になる。
Therefore, if Vt is about IV, it is sufficient that the output voltage of the control signal source 9 is about 10V. By the way, when the above-mentioned time constant is not very large and the duty ratio D of the control signal source 9 is large, due to the nature of the CR circuit, T
The signal applied to the gates of r, , Tr2 has a waveform in which a negative DC voltage is superimposed on the output voltage of the control signal source.

Tr,,Tr2はゲートに正の電圧が加わる程オン状態
が強くなるから、この負の直流電圧分だけオン状態が弱
くなってしまう。
Since the more positive voltage is applied to the gates of Tr, Tr2, the stronger the on state becomes, the on state becomes weaker by this negative DC voltage.

従って、このような場合、制御信号源9の出力電圧を大
さめにしておく必要がある。実験によれば、VtがIV
の時、デューティ比○が10%程度までは制御信号の出
力電圧が10Vあれば十分Tr,,Tr2をオン状態に
できた。
Therefore, in such a case, it is necessary to increase the output voltage of the control signal source 9. According to experiments, Vt is IV
When the duty ratio ◯ was about 10%, the output voltage of the control signal of 10V was enough to turn on Tr, Tr2.

制御信号源9からパルス出力電圧が印加されない期間は
抵抗19によりゲート電極2,6とソース電極1,5と
が短絡されているためTr,,Tr2はオフ状態となる
。抵抗19は、前述の時定数を大きくするため、大きい
方が望ましいが、ゲート電極2,6の入力インピーダン
スを小さくして雑音による誤動作を防ぐ役目も果すので
、両者を勘案して決める必要がある。
During a period when no pulse output voltage is applied from the control signal source 9, the gate electrodes 2, 6 and the source electrodes 1, 5 are short-circuited by the resistor 19, so that the transistors Tr, Tr2 are in an off state. The resistor 19 is desirably larger in order to increase the above-mentioned time constant, but it also serves to reduce the input impedance of the gate electrodes 2 and 6 to prevent malfunctions due to noise, so it is necessary to take both into consideration when deciding on the resistor 19. .

静電容量20,21は交流電源15の周波数に対しては
大きなインピーダンスを持ち、実質的に、制御信号源9
と交流電源15とは絶縁分離されている。
The capacitances 20 and 21 have a large impedance with respect to the frequency of the AC power supply 15, and are substantially connected to the control signal source 9.
and AC power supply 15 are insulated and separated.

絶縁分離する必要がない場合、静電容量20があれば制
御信号源の端子9と交流電源15の端子17を直接接続
しても動作する。また静電容量21は必しもつなぐ必要
はなく、制御信号源15の端子11と交流電源15の端
子17あるいは負荷12の端子14との間の浮遊容量で
十分動作が可能である。以上述べたように本発明によれ
ば交流電源の電圧に比べて十分小さく、トランジスタの
閥値より大きい程度の制御信号電圧をパルス的に印加し
てトランジスタをパルス的にオンオフすることにより交
流電源から負荷へのエネルギーの供給を制御する、安価
で小形軽量価等にハイブリッド集積化が容易な双方向ス
イッチが得られる。
If there is no need for insulation separation, it will work even if the terminal 9 of the control signal source and the terminal 17 of the AC power supply 15 are directly connected, as long as the capacitance 20 is present. Further, the capacitance 21 does not necessarily need to be connected, and a stray capacitance between the terminal 11 of the control signal source 15 and the terminal 17 of the AC power supply 15 or the terminal 14 of the load 12 is sufficient for operation. As described above, according to the present invention, a control signal voltage that is sufficiently small compared to the voltage of the AC power source and larger than the threshold value of the transistor is applied in a pulse manner to turn the transistor on and off in a pulse manner, so that the voltage can be removed from the AC power source. A bidirectional switch that controls the supply of energy to a load and is inexpensive, small, lightweight, and easy to integrate into a hybrid can be obtained.

【図面の簡単な説明】[Brief explanation of drawings]

第1図、第2図a,b、第3図は双方向スイッチの従来
例であり、第2図は第1図の従来例の動作原理を説明す
るための図である。 第4図は本発明の一実施例である。図において、1,6
はソース電極、2,6はゲート電極、3,7はドレィン
電極、4,8は基板電極、9は制御信号源、10,11
は制御信号源の端子、12は負荷、13,14は負荷の
端子、15は交流電源、16,17は交流電源の端子、
18はパルストランス、19は抵抗、20,21は静電
容量である。オー図 オ2図 汁3図 4ジ
1, FIGS. 2a and 2b, and FIG. 3 show conventional examples of bidirectional switches, and FIG. 2 is a diagram for explaining the operating principle of the conventional example of FIG. FIG. 4 shows an embodiment of the present invention. In the figure, 1,6
are source electrodes, 2 and 6 are gate electrodes, 3 and 7 are drain electrodes, 4 and 8 are substrate electrodes, 9 is a control signal source, 10 and 11
is a terminal of a control signal source, 12 is a load, 13 and 14 are load terminals, 15 is an AC power supply, 16 and 17 are terminals of an AC power supply,
18 is a pulse transformer, 19 is a resistor, and 20 and 21 are capacitors. O Figure O 2 Figure Juice 3 Figure 4 Ji

Claims (1)

【特許請求の範囲】[Claims] 1 同一導電形の二つの絶縁ゲート形電界効果トランジ
スタのゲート電極同志,ソース電極同志,基板電極同志
を接続し、該ソース電極と該基板電極を接続し、該ゲー
ト電極と該ソース電極を抵抗で接続し、該ゲート電極に
静電容量を接続して制御信号源の一端を接続する入力端
子とし、二つのドレイン端子を被制御端子とする双方向
スイツチにおいて、前記被制御端子間に接続された交流
電源と負荷との中点と該制御信号源の他の一端との間に
制御用パルス信号を通すための静電容量あるいはこれと
等価の浮遊容量を設けたことを特徴とする双方向スイツ
チ。
1 Connect the gate electrodes, source electrodes, and substrate electrodes of two insulated gate field effect transistors of the same conductivity type, connect the source electrodes and the substrate electrodes, and connect the gate electrodes and the source electrodes with a resistor. In a bidirectional switch, the gate electrode is connected to a capacitor, and one end of the control signal source is connected as an input terminal, and the two drain terminals are controlled terminals. A bidirectional switch characterized by providing a capacitance or an equivalent stray capacitance for passing a control pulse signal between the midpoint between an AC power source and a load and the other end of the control signal source. .
JP5197079A 1979-04-26 1979-04-26 two-way switch Expired JPS601780B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5197079A JPS601780B2 (en) 1979-04-26 1979-04-26 two-way switch

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5197079A JPS601780B2 (en) 1979-04-26 1979-04-26 two-way switch

Publications (2)

Publication Number Publication Date
JPS55143836A JPS55143836A (en) 1980-11-10
JPS601780B2 true JPS601780B2 (en) 1985-01-17

Family

ID=12901720

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5197079A Expired JPS601780B2 (en) 1979-04-26 1979-04-26 two-way switch

Country Status (1)

Country Link
JP (1) JPS601780B2 (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3046907A1 (en) * 1980-12-12 1982-07-15 Siemens AG, 1000 Berlin und 8000 München Full-wave rectifier with two power FETs - in series with AC supply, and on same semiconductor chip
JPS583425A (en) * 1981-06-30 1983-01-10 Chino Works Ltd Input switching circuit
JPS5833323A (en) * 1981-08-21 1983-02-26 Chino Works Ltd Input switching circuit
JPS5864438U (en) * 1981-10-26 1983-04-30 宇部興産株式会社 composite sheet
JPS59225A (en) * 1982-06-25 1984-01-05 Nec Corp Bidirectional controlling circuit
US4487458A (en) * 1982-09-28 1984-12-11 Eaton Corporation Bidirectional source to source stacked FET gating circuit
US4595847A (en) * 1983-10-20 1986-06-17 Telmos, Inc. Bi-directional high voltage analog switch having source to source connected field effect transistors

Also Published As

Publication number Publication date
JPS55143836A (en) 1980-11-10

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