JPS6030104B2 - semiconductor equipment - Google Patents

Description

[Detailed description of the invention] The present invention relates to a semiconductor device with improved lead wires.

In recent years, diode-type and transistor-type semiconductor devices have been each improved, but the present invention was made with a particular focus on lead wires, and improves the strength, ductility, solderability, and bondability of lead wires with resin. A preferable semiconductor device is provided.

Conventionally, lead wires for semiconductor devices have mainly been made of pure Ni or a 50Ni-Fe alloy, which has excellent strength and repeated bendability. However, since this lead wire has poor solderability, recently lead wires mainly made of copper have been used. Lead wires made mainly of copper are preferable because they have good solderability and good conductivity, but when used in semiconductor devices in which semiconductor elements are molded with resin, they have the following disadvantages. there were.

In other words, common copper alloys have high thermal conductivity.

Therefore, when a resin-molded semiconductor device is soldered to a predetermined location, the heat of the solder bath is likely to be transmitted through the lead wires, causing the resin temperature in the molded portion to rise excessively. Therefore, the bonding force of the resin becomes weak, and the expansion and contraction of the lead wire combine to cause the lead wire to wobble when an external force is applied to the lead wire, causing problems in subsequent steps. Therefore, an object of the present invention is to provide an excellent semiconductor device in which the bondability with resin is particularly improved without impairing the strength, repeatability, and solderability of lead wires mainly made of copper.

In the semiconductor device according to the present invention, the lead wire has an AI content of % by weight.
8 to 13%, preferably 9 to 12%, Nj 5 to 10%, preferably 6 to 9%, the remainder being substantially made of a copper alloy made of Cu.

The reasons for limiting each component will be described below.

N contributes to improving the strength, but if it is less than the above range, it will not have that effect, and if it is too much, it will become brittle due to Cu2AI and have poor workability, so the above range is preferable. Ni has the function of reducing the rate of eutectoid reaction and imparts ductility to the material, but if it is too little, it will not have that effect, and if it is added too much, it will not be effective considering the amount, so the above range is preferable. Examples of the present invention will be described below. An ingot having the component composition shown in Table 1 was melted,
0.45 by cold working after hot working at 700~800oo
The wire rod was made into a wire rod of 50 mm, and was annealed at 500 to 700 oo to prepare a sample. Table 2 shows the stiffness, repeatability, and electrical conductivity of these samples. In addition, after embedding the sample in resin, soldering was performed to examine solderability and the state of bonding with the resin. The results are shown in Table 3. The repeatability was determined by applying a load of 45 mm. The number of times the test piece was repeated 900 times at the station until it broke is shown as the number of times it broke, and the solderability and bondability with resin are each shown as the number of defects out of 100 samples.

- Table 2 Table 3 Here, the quality of solderability was determined by immersing the obtained lead wire sample in 4-Misaki B-Sn solder at about 230° for about 5 seconds, and those with peeling of the solder being judged as defective.

In addition, to check the bondability with the resin, embed one end of the lead wire sample in the epoxy resin for about 5 ribs, solder the other end under the above conditions, bend the lead wire sample at an angle of about 90 degrees, and then horizontally turn it about 900 times. Those in which the lead wire sample separated from the resin and rotated were considered defective. As is clear from Table 3, the lead wire, which is a feature of the device of the present invention, has no defects in solderability or bondability with resin, and in this respect it is significantly different from conventional lead wires and is extremely superior. . Furthermore, according to Table 2, the IJ cord wire according to the present invention has preferable strength as shown by stiffness and ductility as shown by the number of repeated bending, and its electrical conductivity is similar to that of 50Ni-Fe alloy, which is sufficient for practical use. It is. When semiconductor devices formed with such diagonal wires were actually used for various purposes, they were extremely robust and excellent even when attached by soldering.

Claims (1)

[Scope of Claims] A semiconductor device characterized in that a lead portion is formed of a copper alloy consisting of 1% by weight of 8 to 13% Al and 5 to 10% Ni with the remainder substantially Cu. 2. The semiconductor device according to claim 1, wherein Al is 9 to 12%. 3. The semiconductor device according to claim 1, wherein Ni is 6 to 9%.