JPS6034266B2 - semiconductor equipment - Google Patents

Description

[Detailed description of the invention] The present invention relates to a semiconductor device with improved lead wires.

In recent years, diode-type and transistor-type semiconductor devices have been each improved, but the present invention was made with a particular focus on lead wires, and improves the strength, ductility, solderability, and bondability of lead wires with resin. A preferable semiconductor device is provided.

Conventionally, lead wires for semiconductor devices have mainly been made of pure Ni or a 50Ni-Fe alloy, which has excellent strength and repeated bendability. However, since this lead wire has poor solderability, recently lead wires mainly made of copper have been used. Lead wires made mainly of copper have good solderability and good conductivity, so
Although this is preferable, when it is used in a semiconductor device in which a semiconductor element is molded with resin, there are the following difficulties.

In other words, common copper alloys have high thermal conductivity.

Therefore, when a resin-molded semiconductor device is soldered to a predetermined location, the heat of the solder bath is likely to be transmitted through the lead wires, causing the resin temperature in the molded portion to rise excessively. Therefore, the bonding force of the resin becomes weak, and the expansion and contraction of the lead wire combine to cause the lead wire to wobble when an external force is applied to the lead wire, causing problems in subsequent steps. Therefore, an object of the present invention is to provide an excellent semiconductor device in which the bondability with resin is particularly improved without impairing the strength, repeatability, and solderability of lead wires mainly made of copper.

In the semiconductor device according to the present invention, the lead wire is Mn8 by weight%.
~15%, AI2~5%, the remainder being a copper alloy consisting essentially of Cu, or Mn8~15%, AI2~5%, Si, W,
It is characterized in that it is made of a copper alloy consisting of 0.001 to 1.0% of B alone or in combination, and the remainder substantially of Cu.

The reasons for limiting each component will be described below. Mn and N improve strength and ductility, but if they are present too much, solderability and workability deteriorate, and the electrical conductivity becomes too low.

On the other hand, if the amount is too small, the electrical conductivity will be high, and therefore the thermal conductivity will be high, and the strength and ductility will be low, so the above range is preferable. Si, Q, and B improve strength and ductility and suppress coarsening of crystal grains, so they prevent surface roughness and improve workability. It also improves solderability, but even if it is added in a large amount, there is no effect, and if it is added in a small amount, no effect can be obtained, so the above range is desirable. Embodiments of the lead wire according to the device of the present invention will be described in detail below.

An ingot having the component composition shown in Table 1 was melted and 700 to 8
After hot working at 0.00 to 0.0, it was made into a wire rod with a diameter of 7. this,
After pickling, the wire rod is made into a wire rod with a diameter of 2 by cold drawing.
After sintering and quenching at 700 degrees centigrade, a willow wire rod with a diameter of 0.455 was prepared by cold wire drawing and heat treated at 300 to 450 qo for 10 minutes to prepare a sample. Table 2 shows the repeatability, stiffness, and electrical conductivity of the samples of the present invention and general samples. Further, after embedding the sample in resin, soldering was performed at 200 to 300 oo, and the state of bonding with the resin was examined for solderability. The results are shown in Table 3. Repeated curliness is 45 female r
Apply a load of 0. Repeatedly make 9,000 curls with the ball without a row,
The number of times until breakage is shown, and the solderability and bondability with resin are each shown as the number of failures in 100 samples.

Table 1 Table 2 Table 3 Here, the quality of solderability was determined by immersing the obtained wire sample in approximately 230 qo of tetrafertility B-Sn solder for approximately 5 seconds, and those exhibiting peeling of the solder were judged to be defective.

In addition, to check the bondability with the resin, embed one end of the lead wire sample in the epoxy resin for about 5 inches, solder the other end under the above conditions, bend the lead wire sample at an angle of 90 degrees, and turn it horizontally about 90 degrees. Those where the wire sample separated from the resin and rotated were considered defective. As is clear from Table 3, the lead wire, which is a feature of the device of the present invention, has no defects in solderability or bondability with resin, and in this respect it is significantly different from conventional lead wires and is extremely superior. .

Furthermore, according to Table 2, the lead wire according to the present invention has favorable strength as indicated by stiffness and ductility as indicated by the number of repeated bending, and its electrical conductivity is equivalent to that of 50Ni-Fe alloy, which is sufficient for practical use. . When a transistor-type semiconductor device formed with such diagonal wires was actually used for various purposes, it was found to be extremely robust and excellent even when attached by soldering.

As described above, the semiconductor device of the present invention is an excellent device formed using improved wires and has high industrial value.

Claims (1)

[Scope of Claims] A semiconductor device characterized in that a lead portion is formed of a copper alloy consisting of 1% by weight of 8 to 15% Mn and 2 to 5% Al with the remainder being substantially Cu. 2% by weight Mn 8-15%, Al2-5% Si, Ge
, B alone or in combination of 0.001 to 1.0% and the remainder substantially Cu.