JPS6034267B2 - semiconductor equipment - Google Patents

Description

[Detailed description of the invention] The present invention relates to a semiconductor device with improved IJ-do lines.

In recent years, diode-type and transistor-type semiconductor devices have been each improved, but the present invention was made with a particular focus on lead wires, and improves the strength, ductility, solderability, and bondability of lead wires with resin. A preferable semiconductor device is provided.

Conventionally, lead wires for semiconductor devices have mainly been made of pure Ni or a five-plate j-Fe alloy, which has excellent strength and repeated bendability. However, since this lead wire has poor solderability, recently lead wires mainly made of copper have been used. Lead wires made mainly of copper are preferable because they have good solderability and good conductivity, but when used in semiconductor devices in which semiconductor elements are molded with resin, they have the following disadvantages. Ta.

In other words, general shrinkage alloys have high thermal conductivity.

Therefore, when a resin-molded semiconductor device is soldered to a predetermined location, the heat of soldering is easily transmitted through the lead wires, causing the resin temperature in the molded portion to rise excessively. As a result, the bonding force of the resin becomes weak and the lead wire expands and contracts, and when an external force is applied to the lead wire, the lead wire wobbles and becomes a hindrance to subsequent steps. Therefore, the present invention provides an excellent semiconductor device which is mainly made of copper alloy, has high strength and repeatability as a lead wire, and has particularly improved solderability and bondability with resin. In the semiconductor device according to the present invention, the lead wire has a Nj of 3 to 15% by weight.
%, Si, Snake, B alone or in combination 0.005 to 0.1
%, the remainder substantially consists of Cu, or an alloy in which part of the Cu in this alloy is replaced with 3% or less of Sn (however, Nj
+Sn4 to 15%). Explaining the reason for limiting each component, Ni improves strength, but if it is contained in a large amount, the solderability deteriorates, and if it is contained in a small amount, there is no effect, so the above range is desirable.

Sj, Q, and B exhibit their effects when used in small amounts, and at the same time improve strength, suppress crystal grain enlargement, and prevent surface roughness during processing, but even if they are contained in large amounts, they are not effective. Therefore, the above range is desirable. Sn improves strength, reduces heat conduction, and improves solderability, but if it is contained in large amounts,
The above range is desirable since it deteriorates workability and also tends to cause segregation. It should be noted that if the amount of Ni+Sn is too small, the thermal conductivity will be high and bondability with the resin will be poor, and if it is too large, repeated bending will be bad, so the above range is preferable. 'Examples of the present invention will be described below.

An ingot having the component composition shown in Table 1 was melted and 900 to 1
After hot working at 000°C, it was made into a wire rod with a diameter of 7 skins, which was then cold wire drawn into a diameter of 2 willows, heated and quenched at 60 to 70,000°C, and further processed into a wire with a diameter of 0.455. .
This was annealed at a temperature of 400 to 50,000 and used as a sample. Table 1 The stiffness, repeatability, and electrical conductivity of these samples were compared and investigated.

The results are shown in Table 2. Regarding repeatability, see 4.
Apply a load of 5 mm and apply a 900 mm topknot to 0. It is expressed as the number of times the ball is repeatedly used until the ball is damaged. Table 2 Table 3 also shows the solderability and bondability with resin.

To check the solderability, test the obtained wire sample with 230q.
It was dipped in Sn solder for about 5 seconds, and those with peeling of the solder were judged as defective. Further, the samples were heated at 150 qo for 2 feeding hours, and those with peeling of the solder were judged as defective. To check the bondability of the resin, embed one end of the lead wire sample in epoxy resin on about 5 sides, solder the other end under the above conditions, bend the lead wire sample at an angle of about 900 degrees, and then rotate it horizontally 900 times. A sample in which the lead wire separated from the resin and rotated was considered defective. Table 3 As is clear from Tables 2 and 3, the lead wires (sample numbers 1 to 6) constituting the device of the present invention show favorable results with good balance in stayness, repeated bending, and conductivity.

Among these, those to which Sn is added are more preferable in terms of strength and repeated bending. In addition, the solderability and bondability with resin, which are important for semiconductor devices, were compared with Cu and 50Ni-Fe as comparative examples.
In contrast, the material according to the present invention is excellent in both solderability and bondability with resin, and is extremely preferred in practice. As described above, the lead wire constituting the device of the present invention is extremely superior to conventional lead wires in terms of strength, repeatability, good solderability, and bondability with resin.

When semiconductor devices formed with such crossed wires were actually used for various purposes, they were extremely robust and excellent even when attached by soldering.

Claims (1)

[Claims] The lead portion is formed of an alloy consisting of 3 to 15% Ni, 0.005 to 0.1% Si, Ge, and B alone or in combination, and the remainder substantially Cu at 1% by weight. A semiconductor device characterized by: 2 Weight%: Ni 3 to 15%, Sn 3% or less, but Ni+
Sn4-15%, Si, Ge, B alone or in combination 0.
1. A semiconductor device characterized in that a lead portion is formed of an alloy consisting of Cu in an amount of 0.005 to 0.1%, with the remainder being substantially Cu.