JPS6033004B2 - transistor oscillator - Google Patents
transistor oscillatorInfo
- Publication number
- JPS6033004B2 JPS6033004B2 JP1212978A JP1212978A JPS6033004B2 JP S6033004 B2 JPS6033004 B2 JP S6033004B2 JP 1212978 A JP1212978 A JP 1212978A JP 1212978 A JP1212978 A JP 1212978A JP S6033004 B2 JPS6033004 B2 JP S6033004B2
- Authority
- JP
- Japan
- Prior art keywords
- coaxial
- terminal
- waveguide
- transistor
- bias voltage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/18—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising distributed inductance and capacitance
- H03B5/1841—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising distributed inductance and capacitance the frequency-determining element being a strip line resonator
- H03B5/1847—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising distributed inductance and capacitance the frequency-determining element being a strip line resonator the active element in the amplifier being a semiconductor device
- H03B5/1852—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising distributed inductance and capacitance the frequency-determining element being a strip line resonator the active element in the amplifier being a semiconductor device the semiconductor device being a field-effect device
Landscapes
- Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)
Description
【発明の詳細な説明】
この発明は小形軽量にして、かつ周波数安定性のよいト
ランジスタ発振器に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a transistor oscillator that is small and lightweight and has good frequency stability.
従来のこの種装置は第1図に示す通りであって、一端を
短絡板1で終端した導波管2にバイアス電圧を供給でき
る構造の同軸導波管変換器3を設け、上記同軸導波管変
換器3の同軸4内にFETトランジスタ5を挿入し、ド
レィン端子6とゲート端子7を同軸4の内導体に、ソー
ス端子8を同軸4の外導体にそれぞれ接続し、ゲート端
子7個の同軸を所定長さで高周波帯では端絡し、かつゲ
ート端子にバイアス電圧を供給できる構造にしたもので
、ゲート側同軸線路長で発振周波数を調整するとともに
、同軸導波管変換器3と短絡板1位置とで発振出力を調
整するものである。しかしこの発振器の共振系は同軸で
構成しているため発振器のQが低く、周波数安定性がよ
くない。高Q化のためにQの高い空腕を装荷する等の手
段が必要である。また同軸導波管変換器3を介してFE
Tトランジスタをマウントするため、この部分が導波管
から突起し、寸法的に大きくなる。この発明はこれ等の
問題点を解決するためにFETトランジスタを導波管空
胸中にマゥントしたもので、以下詳細に説明する。第2
図はこの発明によるトランジスタ発振器の実施例で、結
合窓9と短絡板11とで導波管2を終補してできる空胴
10中に、結合窓9から所要動作周波数で約1/折管内
波長距離にバイアス電圧を供給できる同軸4を所要長さ
挿入し、同軸4の先端の外導体にドレィン端子6を、ま
た内導体にゲート端子7を接続できる同軸パッケージタ
イプのFETトランジスタ5を挿入するとともに同軸を
挿入した導波管面と対向する面からバイアス電圧を供給
できる金属ポスト11を挿入し、ソース端子8を接続し
たものである。A conventional device of this kind is shown in FIG. 1, and is provided with a coaxial waveguide converter 3 having a structure capable of supplying a bias voltage to a waveguide 2 whose one end is terminated with a shorting plate 1. Insert the FET transistor 5 into the coax 4 of the tube converter 3, connect the drain terminal 6 and gate terminal 7 to the inner conductor of the coax 4, connect the source terminal 8 to the outer conductor of the coax 4, and connect the seven gate terminals. It has a structure in which a predetermined length of coax is short-circuited in the high frequency band and a bias voltage can be supplied to the gate terminal.The oscillation frequency is adjusted by the coaxial line length on the gate side, and the coaxial waveguide converter 3 is short-circuited. The oscillation output is adjusted based on the plate 1 position. However, since the resonant system of this oscillator is coaxial, the Q of the oscillator is low and the frequency stability is poor. In order to increase the Q, it is necessary to take measures such as loading an empty arm with a high Q. In addition, FE via the coaxial waveguide converter 3
In order to mount the T transistor, this part protrudes from the waveguide and becomes dimensionally large. In order to solve these problems, the present invention mounts an FET transistor in a waveguide cavity, and will be described in detail below. Second
The figure shows an embodiment of a transistor oscillator according to the present invention, in which the waveguide 2 is terminated with a coupling window 9 and a shorting plate 11 to form a cavity 10, and from the coupling window 9 at the required operating frequency, the tube is folded approximately 1/2 times. A coax 4 capable of supplying a bias voltage over the wavelength range is inserted to the required length, and a coaxial package type FET transistor 5 is inserted that can connect the drain terminal 6 to the outer conductor at the tip of the coax 4 and the gate terminal 7 to the inner conductor. At the same time, a metal post 11 capable of supplying a bias voltage is inserted from the surface opposite to the waveguide surface into which the coaxial cable is inserted, and the source terminal 8 is connected to the metal post 11.
発振周波数は主に結合窓9と同軸4との距離で決まり、
発振出力はゲート端子7に接続する同軸長、導波管2に
挿入する同軸長、結合窓の大きさ、同軸挿入点の管軸方
向への偏移等で調整できる。発振周波数の徴調は結合窓
9と同軸4との中間距離にネジ機構で挿入長を変えられ
る金属または誘電体棒12を挿入して行う。第3図はこ
の発明になるトランジスタ発振器の値の実施例である。The oscillation frequency is mainly determined by the distance between the coupling window 9 and the coax 4,
The oscillation output can be adjusted by adjusting the coaxial length connected to the gate terminal 7, the coaxial length inserted into the waveguide 2, the size of the coupling window, the deviation of the coaxial insertion point in the tube axis direction, etc. The oscillation frequency is tuned by inserting a metal or dielectric rod 12 whose insertion length can be changed by a screw mechanism at an intermediate distance between the coupling window 9 and the coax 4. FIG. 3 shows an example of values for a transistor oscillator according to the invention.
金属ポスト11を挿入する代りに同軸4と導波管2との
間にバイアス電圧を印加する構造にしたものである。な
お以上はFETトランジスタを用いた場合について説明
したが、この発明はこれに限らず、バィポーラトランジ
スタ等のトランジスタを用いてもよい。Instead of inserting a metal post 11, a bias voltage is applied between the coax 4 and the waveguide 2. Note that although the case where FET transistors are used has been described above, the present invention is not limited to this, and transistors such as bipolar transistors may also be used.
またパッケージスタイルとして同軸形を用いて説明した
が、第1図に示したようなストリップライン形でもよい
。さらに、同軸内導体、外導体および金属ポストに接続
するFETトランジスタの各端子を上記説明の場合と変
えてもよい。以上のようにこの発明に係るトランジスタ
発振器では、導波管空耳同中に同軸を挿入することで発
振器を小形化でき、かつ、共振系として導波管空8同を
用いるため、同軸形共振器を用いる場合より発振器の高
Q化が計れ、また空8同内に譲露体樺等を挿入して発振
周波数が簡単に調整できる利点がある。Furthermore, although the coaxial package style has been described, a stripline package style as shown in FIG. 1 may also be used. Furthermore, the terminals of the FET transistor connected to the coaxial inner conductor, outer conductor, and metal post may be changed from those described above. As described above, in the transistor oscillator according to the present invention, the oscillator can be made smaller by inserting a coaxial tube into the waveguide cavity, and since the waveguide cavity 8 is used as a resonant system, the coaxial resonator This has the advantage that the Q of the oscillator can be made higher than when using the oscillator, and the oscillation frequency can be easily adjusted by inserting a conduit birch or the like in the space 8.
第1図は従来のトランジスタ発振器の構造を示す図、第
2図はこの発明になるトランジスタ発振器の構造例を示
す図、第3図はこの発明になるトランジスタ発振器の他
の構造例を示す図である。
図中1は短絡板、2は導波管、3は同軸導波管変換器、
4は同軸、5はFETトランジスタ、6はドレイン端子
、7はゲート端子、8はソース端子、9は結合窓、10
は空且同、11は金属ポスト、12は金属または誘電体
棒である。なお図中同一あるいは相当部分には同一符号
を付して示してある。多1図
ゑZ図
そう鍵FIG. 1 is a diagram showing the structure of a conventional transistor oscillator, FIG. 2 is a diagram showing an example of the structure of the transistor oscillator according to the present invention, and FIG. 3 is a diagram showing another example of the structure of the transistor oscillator according to the present invention. be. In the figure, 1 is a short circuit plate, 2 is a waveguide, 3 is a coaxial waveguide converter,
4 is coaxial, 5 is FET transistor, 6 is drain terminal, 7 is gate terminal, 8 is source terminal, 9 is coupling window, 10
11 is a metal post, and 12 is a metal or dielectric rod. Note that the same or corresponding parts in the figures are indicated by the same reference numerals. Multi 1 diagram ゑZ diagram so key
Claims (1)
してなる空胴中の所定位置に導波管H面壁にほぼ垂直に
所定長さの同軸線路を挿入するとともにこの同軸線路の
一端にはFETトランジスタを取付け、上記FETトラ
ンジスタの第1の端子を同軸外導体端面に、第2の端子
を同軸内導体にそれぞれ接続し、さらには同軸線路を挿
入した面と対向するH面壁からバイアス電圧を印加でき
る構造の金属ポストを挿入して第3の端子に接続し、同
軸内導体の第2の端子から所定の長さの点でマイクロ波
帯で高インピーダンスまたは低インピーダンスとなりか
つバイアス電圧が印加できるように構成したことを特徴
とするトランジスタ発振器。1 A coaxial line of a predetermined length is inserted almost perpendicularly to the H-plane wall of the waveguide at a predetermined position in a cavity formed by terminating one end of a rectangular waveguide with a shorting plate and the other end with a coupling window, and this coaxial line A FET transistor is attached to one end, the first terminal of the FET transistor is connected to the end face of the coaxial outer conductor, the second terminal is connected to the coaxial inner conductor, and further an H-plane wall facing the surface into which the coaxial line is inserted is connected. A metal post structured to be able to apply a bias voltage is inserted and connected to the third terminal, and a point at a predetermined length from the second terminal of the coaxial conductor becomes high impedance or low impedance in the microwave band and the bias voltage is applied. A transistor oscillator characterized in that it is configured so that a voltage can be applied.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1212978A JPS6033004B2 (en) | 1978-02-06 | 1978-02-06 | transistor oscillator |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1212978A JPS6033004B2 (en) | 1978-02-06 | 1978-02-06 | transistor oscillator |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS54105452A JPS54105452A (en) | 1979-08-18 |
| JPS6033004B2 true JPS6033004B2 (en) | 1985-07-31 |
Family
ID=11796914
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1212978A Expired JPS6033004B2 (en) | 1978-02-06 | 1978-02-06 | transistor oscillator |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6033004B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59204289A (en) * | 1983-05-09 | 1984-11-19 | Toshiba Corp | Double terminal negative resistance element |
-
1978
- 1978-02-06 JP JP1212978A patent/JPS6033004B2/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS54105452A (en) | 1979-08-18 |
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