JPS6033006B2 - semiconductor oscillator - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a compact and highly efficient semiconductor oscillator with a temperature compensation mechanism.

FIG. 1 is a sectional view of a conventional device of this type.

A coaxial waveguide converter 3 having a structure capable of supplying a bias voltage to a waveguide 2 whose one end is terminated with a shorting plate 1 is provided, an FET 5 is loaded in the coaxial 4 of the coaxial waveguide converter 3, and a drain terminal is connected to the coaxial waveguide converter 3. 6 and the gate terminal 7 are connected to the inner conductor of the coax 4, and the source terminal 8 is connected to the outer conductor of the coax 4, and short-circuited at a high frequency at a predetermined length of the coax on the gate terminal 7 side, and the bias It has a structure that can supply voltage. The oscillation frequency is mainly adjusted by the gate side coaxial line length, and the short circuit plate 1
Adjust the oscillation output at the position. In this example, the oscillator resonator is coaxial, so the Q is low, the oscillator has poor stability against voltage fluctuations and load fluctuations, and it is difficult to improve frequency stability due to ambient temperature changes. In addition, in order to operate at an operating point with good oscillation efficiency,
The above adjustment method alone is insufficient, and it is necessary to adjust the amount of feedback from the drain side to the gate side. Furthermore, since the FET is loaded on the same part that protrudes from the waveguide part, the vertical dimension becomes large. In order to eliminate these drawbacks, the present invention has a three-terminal amplified oscillation semiconductor element such as an FET and a dielectric resonator loaded in a waveguide, and will be described in detail below.

FIG. 2 is a sectional view showing an embodiment of a semiconductor oscillator according to the present invention.

A cutoff waveguide 10 serving as a cutoff region at a required oscillator operating frequency is connected to the main waveguide 9, and a shorting plate 1 is installed at a predetermined length from this connection point C. FET5 near connection point C
The source terminal 8 is connected to the solar wall of the waveguide, and the drain terminal 6 is connected via the bias terminal AII inserted almost perpendicularly to the H-plane of the main waveguide 9. The gate terminal is extended by a predetermined dimension using the provided transfer body plate 12 as a support, and is connected to a bias circuit also provided on the transfer body plate to apply a bias voltage. Further, a rotary body resonator 13 is loaded at a predetermined position on the side of the entrance of the main waveguide from the bias terminal AII. The oscillation frequency of this oscillator is approximately determined by the dielectric resonator I3, and the temperature dependence of the resonant frequency of the dielectric resonator is almost zero, and the temperature is such that the oscillation frequency change contribution due to temperature changes of the FET and oscillator components is canceled out. By making it dependent, it is possible to stabilize the high frequency.

In addition, the oscillation output can be adjusted by adjusting the reactance of the gate side circuit, the height of the main waveguide, the deviation of the bias terminal AII from the center of the tube axis, etc., and by shifting FET 5 from the connection point C to the cutoff waveguide side. The amount of feedback between the drain and gate can be adjusted, enabling high efficiency operation. FIG. 3 is a sectional view of another embodiment of the semiconductor oscillator according to the present invention.

Cut-off waveguide 1 as a configuration method for gate side reactance circuit
A bias terminal B14 having the same structure as the bias terminal AII is inserted into the bias terminal AII, and the gate terminal 7 is connected to the tip thereof and fixed with a dielectric piece 15. Further, a coupling window 16 is provided on the waveguide closing side of the main waveguide 9 to form a cavity 17, and a dielectric resonator 13 is loaded via a support beam 18 at a position where the electric field is relatively strong. Since the waveguide cavity resonant frequency can be lowered below the required oscillation frequency by inserting a dielectric resonator, the size of the coupling window 16 is adjusted to ensure good operation at the dielectric resonator resonant frequency, and an appropriate load impedance and can do. In addition, as a tuning mechanism for the oscillation frequency, it is practically meaningful to insert a screw 19 into the waveguide wall facing the dielectric resonator, whose insertion dimension can be varied using a screw mechanism, etc., to change the resonant frequency of the dielectric resonator. . Furthermore, a dielectric material 2 for temperature compensation adjustment is provided on the surface of the screw facing the dielectric resonator 13.
By installing 0, it becomes possible to adjust the temperature compensation amount. Although the case where FETs are used has been described above, the present invention is not limited to this, and other three-terminal amplification oscillation semiconductor devices such as bipolar transistors may be used.

It goes without saying that similar means can be used by driving a single power source with a general transistor amplifier whose source terminal is grounded only at high frequencies and a bias voltage is applied by an appropriate bias supply circuit. As described above, in the semiconductor oscillator according to the present invention, a three-terminal amplified oscillation semiconductor element is loaded into a waveguide, and the semiconductor oscillator is configured with a load including a dielectric resonator also inserted into the waveguide and a cutoff waveguide. High Q with adjustable feedback amount between terminals by connecting to actance circuit
A stable and efficient semiconductor oscillator can be constructed.

[Brief explanation of drawings]

FIG. 1 is a cross-sectional view of a conventional device of this type, FIG. 2 is a cross-sectional view showing one embodiment of the device of the present invention, and FIG. 3 is a cross-sectional view of another embodiment of the device of the present invention. In the figure, 1 is a shorting plate, 2 is a waveguide, 3 is a coaxial waveguide converter, 4 is a coaxial, 5 is a FET, 6 is a drain terminal, 7 is a gate terminal, 8 is a source terminal, and 9 is a leading wave 10 is a cutoff waveguide, 11 is a bias terminal A, 12 is a dielectric plate, 13 is a dielectric resonator, 14 is a bias terminal B, 15 is a dielectric piece, 16 is a coupling window, 17 is a cavity, 18 19 is a support body, 19 is a screw, and 2 parts are a dielectric body for adjusting the amount of temperature compensation. Note that the same or corresponding parts in the figures are indicated by the same reference numerals.
Figure 2 Figure 3 Figure 7

Claims (1)

[Claims] 1. A main wave tube exhibiting a pass characteristic at a required operating frequency and a shear break waveguide exhibiting a break characteristic are connected, a three-terminal amplified oscillation semiconductor element is loaded near the connection point, and the above-mentioned The first terminal of the three-terminal amplified oscillation semiconductor element is connected to the H-plane wall of the waveguide, and the second terminal is inserted approximately perpendicularly to the H-plane wall of the main waveguide for a predetermined length, and the metal post is structured to be able to supply a bias voltage. Connect it to the tip, extend the third terminal a predetermined length into the broken waveguide, connect it to a circuit that can supply a bias voltage, and place it at a predetermined position on the opening side of the main waveguide from the three-terminal amplified oscillation semiconductor element. A semiconductor oscillator characterized in that a dielectric resonator is loaded in the semiconductor oscillator. 2. Claim 1, characterized in that a coupling window is provided at a position on the opening side of the main waveguide by a predetermined distance from the dielectric resonator.
Semiconductor oscillator as described in section.