JPS6033005B2 - semiconductor oscillator - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a small and stable semiconductor oscillator.

An example of this type of slave device is shown in FIG.

A coaxial waveguide converter 3 having a structure capable of supplying a bias voltage to a waveguide 2 whose one end is terminated with a short circuit plate 1 is provided, an FET 5 is inserted into the coaxial 4 of the coaxial waveguide converter 3, and a drain terminal is connected to the coaxial waveguide converter 3. 6 and the gate terminal 7 to the inner conductor of the coaxial waveguide converter 4, and the source terminal 8 to the outer conductor of the coaxial waveguide converter 4. It has a structure that allows short-circuiting and supplying bias voltage to the gate terminal 7.The oscillation frequency is mainly adjusted by the length of the coaxial line on the gate side, and the oscillation output is adjusted by changing the position of the shorting plate. It is. However, in this device, since the resonant system is constructed with the gate side coaxial, the resonator Q is low and the oscillator stability is poor. Furthermore, since there is no means for adjusting the amount of electromagnetic coupling between the drain and the source, it is difficult to operate at the optimum operating point. Furthermore, since the coax is mechanically protruded from the waveguide, it becomes larger in size. In order to eliminate these drawbacks, the present invention has an FET loaded in a waveguide and will be described in detail below.

FIG. 2 shows an example of a semiconductor oscillator according to the present invention, in which a main waveguide 9 is connected to a cutoff waveguide 10 which becomes a cutoff region at the oscillator operating frequency, and a predetermined length from this connection point C is short-circuited. It terminates at plate 1.

The FET 5 is placed near the connection point C, the source terminal 8 is connected to the waveguide solar wall, and the drain terminal 6 is connected via the bias terminal 11 inserted almost perpendicularly to the waveguide solar surface, and the drain terminal 6 is also cut off. The gate terminal is extended by a predetermined dimension using the dielectric plate 12 provided in the waveguide 10 as a support, and is connected to a bias circuit provided on the dielectric plate to apply a bias voltage. The amount of electromagnetic coupling between the drain and source can be adjusted by shifting the FET 5 from the connection point C toward the cutoff waveguide 10. Can be adjusted depending on length.
The load connected to the drain terminal 6 can be adjusted by changing the height of the main wave tube 9 and the distance from the center of the tube axis to the insertion point of the bias terminal 11. In addition to configuring the main resonant system in the cut-off waveguide 10, as shown in FIG. In addition to this structure, it is possible to adjust the load by changing the coupling window size, and it is also possible to increase the Q of the oscillator. Alternatively, the IJ actance circuit in the cutoff waveguide 10 may be constructed by fixing the end of a gate terminal of a predetermined length between the dielectric piece 14 and the bias terminal 11, and applying a bias voltage thereto. can. In the above description, a case has been described in which an FET is used as the semiconductor element, but the present invention is not limited to this, and other three-terminal microwave amplification and oscillation elements such as a bipolar transistor may be used.

As described above, in the semiconductor oscillator according to the present invention, a reactance circuit can be configured in the cut-off waveguide, and by changing the transistor loading point from the connection point between the main waveguide and the cut-off waveguide to the cut-off waveguide side. The amount of coupling between transistor terminals can be varied and the oscillation characteristics can be adjusted. Furthermore, when a resonant system is constructed using a waveguide, high Q stability of the oscillator can be achieved.

Furthermore, since the transistor is loaded into the waveguide, it can be made smaller compared to the case where the transistor is loaded via a coaxial waveguide converter.

[Brief explanation of the drawing]

FIG. 1 is a structural diagram of a conventional transistor oscillator with a waveguide output gate, FIG. 2 is a diagram showing an example of a semiconductor oscillator according to the present invention, and FIG. 3 is a diagram showing another configuration of a semiconductor oscillator according to the present invention. FIG. In the figure, 1 is a short circuit plate, 2 is a waveguide, 3 is a coaxial waveguide converter,
4 is coaxial, 5 is FET, 6 is drain terminal, 7 is gate terminal, 8 is source terminal, 9 is main waveguide, 10 is cutoff waveguide, 11 is bias terminal, 12 is dielectric plate, 13 is coupling The window 14 is a dielectric piece. Note that the same or corresponding parts in the figures are indicated by the same reference numerals. Figure 7. Figure 2 Figure 3

Claims (1)

[Claims] 1. Connect a main waveguide exhibiting pass characteristics and a cutoff waveguide exhibiting cutoff characteristics at the required operating frequency, load a microwave transistor near the connection point, and connect the first terminal of the transistor to the H-side wall of the waveguide. The second terminal is connected to the tip of a metal post that is structured to be able to supply a bias voltage and is inserted for a predetermined length almost perpendicular to the H plane of the main waveguide, and the third terminal is inserted for a predetermined length into the cut-off waveguide. A semiconductor oscillator characterized in that it is connected to a circuit that stretches and supplies a bias voltage.