JPS6034241B2 - Manufacturing method of thin film resistor - Google Patents
Manufacturing method of thin film resistorInfo
- Publication number
- JPS6034241B2 JPS6034241B2 JP55145144A JP14514480A JPS6034241B2 JP S6034241 B2 JPS6034241 B2 JP S6034241B2 JP 55145144 A JP55145144 A JP 55145144A JP 14514480 A JP14514480 A JP 14514480A JP S6034241 B2 JPS6034241 B2 JP S6034241B2
- Authority
- JP
- Japan
- Prior art keywords
- chromium
- silicon
- temperature coefficient
- resistance value
- nickel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000010409 thin film Substances 0.000 title claims description 11
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- DYRBFMPPJATHRF-UHFFFAOYSA-N chromium silicon Chemical compound [Si].[Cr] DYRBFMPPJATHRF-UHFFFAOYSA-N 0.000 claims description 20
- 238000010438 heat treatment Methods 0.000 claims description 19
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 13
- 229910045601 alloy Inorganic materials 0.000 claims description 13
- 239000000956 alloy Substances 0.000 claims description 13
- 229910052710 silicon Inorganic materials 0.000 claims description 13
- 239000010703 silicon Substances 0.000 claims description 13
- 229910001120 nichrome Inorganic materials 0.000 claims description 10
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 9
- 229910052804 chromium Inorganic materials 0.000 claims description 8
- 239000011651 chromium Substances 0.000 claims description 8
- 229910052742 iron Inorganic materials 0.000 claims description 7
- 238000004544 sputter deposition Methods 0.000 claims description 7
- 239000002131 composite material Substances 0.000 claims description 6
- 229910000676 Si alloy Inorganic materials 0.000 claims description 4
- 238000000034 method Methods 0.000 claims description 2
- PXHVJJICTQNCMI-YPZZEJLDSA-N nickel-57 Chemical compound [57Ni] PXHVJJICTQNCMI-YPZZEJLDSA-N 0.000 claims 1
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 15
- 229910018487 Ni—Cr Inorganic materials 0.000 description 14
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 12
- 239000010408 film Substances 0.000 description 11
- 229910052759 nickel Inorganic materials 0.000 description 8
- 230000000694 effects Effects 0.000 description 4
- 229910052573 porcelain Inorganic materials 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 230000001010 compromised effect Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910000623 nickel–chromium alloy Inorganic materials 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
Landscapes
- Non-Adjustable Resistors (AREA)
- Apparatuses And Processes For Manufacturing Resistors (AREA)
Description
【発明の詳細な説明】
本発明は薄膜抵抗体の製造方法に関するものであり、温
度係数を０±５ｐｐｍ／℃以内に制御できる高安定性ク
ロムシリコン系薄膜抵抗体の提供を目的とするものであ
る。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for manufacturing a thin film resistor, and its purpose is to provide a highly stable chromium-silicon thin film resistor whose temperature coefficient can be controlled within 0±5 ppm/°C. be.
従来から使用されてきたＮｉ−Ｃｒ系や窒化タンタル系
薄膜抵抗は、高安定性で、低温度係数を有する抵抗材料
として、広く実用化されている。Conventionally used Ni-Cr-based and tantalum nitride-based thin film resistors are highly stable and have been widely put into practical use as resistance materials having a low temperature coefficient.
しかしながら、それらの最大面積抵抗値は、それぞれ、
４０００／口、２０００／口程度であり、それ以上の高
抵抗値域は、膜厚の面から安定性にかけるため、これが
限界とされている。このため、高い固有抵抗をもつ抵抗
材料として、クロムシリコン系が提案されているが、ニ
クロム系や窒化タンタル系に比べると、熱的な安定性に
欠けるほか、製造上、温度係数の再現性が得にくいとい
う問題点を有している。本発明は、これら従釆のクロム
シリコン系の欠点を排除した薄膜抵抗体を提供するもの
であり、５２〜６がｔ％のシリコンを含有するクｏムシ
リコン合金と、ニッケル５７Ｍ％以上、クロム１５〜１
納め％、鉄残部ｗｔ％よりなるニクロム合金とより構成
ごた複合ターゲットで前記ニクロム合金が４〜１５ｗｔ
％であるターゲットでスパッタリングした後、４００〜
５５０ｑｏの熱処理を施こすことにより、面積抵抗値５
０００／口〜２ｋ○／口という高抵抗値域にもか）わら
ず、０土５ｐｐｍ／００以内という低温度係数を有し、
かつ熱的な抵抗値の安定性を著しく改善したクロムシリ
コン系薄膜抵抗体の提供を可能としたものである。However, their maximum sheet resistance values are, respectively,
The values are about 4,000/unit and 2,000/unit, and higher resistance values are considered to be the limit because stability is compromised in terms of film thickness. For this reason, chromium-silicon-based materials have been proposed as resistance materials with high resistivity, but compared to nichrome-based and tantalum nitride-based materials, they lack thermal stability and have poor reproducibility of temperature coefficients during manufacturing. The problem is that it is difficult to obtain. The present invention provides a thin film resistor that eliminates the drawbacks of these conventional chromium-silicon based resistors, and is made of a chromium-silicon alloy containing 52 to 6 t% silicon, 57 M% or more of nickel, and 15 t% of chromium. ~1
In a composite target composed of a nichrome alloy consisting of 4% to 15% wt% iron, the nichrome alloy is 4 to 15wt% iron.
After sputtering with a target of 400~
By applying heat treatment of 550qo, the sheet resistance value is 5.
Despite having a high resistance value range of 000/mouth to 2k○/mouth), it has a low temperature coefficient of within 0.5 ppm/00.
In addition, it has become possible to provide a chromium-silicon thin film resistor with significantly improved thermal resistance stability.
本発明において、クロムシリコン合金のシリコン含有量
を５２〜６がｔ％に限定した理由は、シリコン含有量が
５３れ％より少ないと、ニッケルクロム第２種合金を添
加した場合、目的とする面積抵抗５０００／口以上の高
抵抗値が得られず、しかも温度係数が正の方向へ大きく
なるためであり、逆に、シリコン含有量が６がｔ％以上
になると高抵抗値が得られるが、温度係数が負の方向に
大きな値を示すためである。In the present invention, the reason why the silicon content of the chromium-silicon alloy is limited to 52 to 6 t% is that if the silicon content is less than 53%, when the nickel chromium type 2 alloy is added, the desired area will be reduced. This is because a high resistance value of 5000/mouth or more cannot be obtained, and the temperature coefficient increases in the positive direction.On the other hand, if the silicon content is 6t% or more, a high resistance value can be obtained. This is because the temperature coefficient shows a large value in the negative direction.
また、本発明で使用する複合ターゲットの構成において
ニクロム合金を４〜１５ｗｔ％に限定したのは以下の理
由による。Furthermore, the reason why the amount of nichrome alloy is limited to 4 to 15 wt% in the composition of the composite target used in the present invention is as follows.
たとえば、第１図に示すように、シリコン含有量斑Ｗｔ
％のクロムシリコンに、ニッケルクロム第２種合金を極
少量部混入した場合でも、温度係数の低減効果は認めら
れるが、少なくとも、ニッケルクロム第２種合金の添加
量は４ｗｔ％以上が望ましい。For example, as shown in FIG. 1, silicon content unevenness Wt
Even when a very small amount of nickel chromium type 2 alloy is mixed into chromium silicon with a temperature coefficient of 100%, the effect of reducing the temperature coefficient can be observed.
これは、精密級の抵抗器の温度係数は±ｌｏｐｐｍ／℃
以内が要求されており、本発明においてはニッケルクロ
ムの添加量が４ｗｔ％以上において、この要求を満足す
るためである。また、抵抗値安定性の面から要求される
実用的な膜厚（３００Ａ〜５００Ａ以上）において、本
発明の目的の１つである面積抵抗５０００／口以上の高
抵抗値を得ようとすると、第２図に示すように、ニッケ
ル・クロム第２種合金の添加量が増えるに従って抵抗値
が低下するため、ニッケルクロム第２合金の添加量は１
５Ｍ％以内に制限される。This means that the temperature coefficient of a precision resistor is ±loppm/°C.
This is because the present invention satisfies this requirement when the amount of nickel chromium added is 4 wt% or more. In addition, when trying to obtain a high resistance value of 5000/unit or more, which is one of the objectives of the present invention, at a practical film thickness (300A to 500A or more) required from the viewpoint of resistance value stability, As shown in Figure 2, the resistance value decreases as the amount of nickel-chromium 2nd alloy added increases, so the amount of nickel-chromium 2nd alloy added is 1
Limited to within 5M%.
次に、熱処理温度を４００００〜５５０００の間に限定
する理由は、抵抗値を安定化することおよび熱処理温度
を可変することによって、０±５ｐｐｍ／℃以内の低温
度係数に調整するためである。すなわち、加熱温度が４
００００以下では、安定した抵抗皮膜が得られず、また
、５５０℃以上になると、抵抗皮膜が劣化して、安定性
にかけてくる。一方、抵抗温度係数は、一般に熱処理温
度の上昇と共に、負から０を経て正の温度係数へ変化す
る。Next, the reason why the heat treatment temperature is limited to 40,000 to 55,000 is to stabilize the resistance value and vary the heat treatment temperature to adjust the temperature coefficient to a low temperature within 0±5 ppm/°C. In other words, the heating temperature is 4
If the temperature is less than 0,000°C, a stable resistive film cannot be obtained, and if the temperature exceeds 550°C, the resistive film deteriorates and its stability is compromised. On the other hand, the temperature coefficient of resistance generally changes from negative to 0 to positive as the heat treatment temperature increases.
この場合、クロムシリコン系にニッケルクロム第２種を
添加してなる本発明の熱処理温度に対する温度係数の変
化は、第４図および第５図に示すように、第３図に示し
た従来のクロムシリコン単独系に比べ、著しく改善され
ている。In this case, as shown in FIGS. 4 and 5, the change in temperature coefficient with respect to the heat treatment temperature of the present invention in which nickel chromium type 2 is added to the chromium silicon system is different from that of the conventional chromium silicon system shown in FIG. 3. This is a significant improvement over silicon-only systems.
したがって、本発明は、その組成比に応じ、４００ｑｏ
〜５５０午０の温度範囲内において、適当な熱処理温度
を付与することにより、高安定性で、０±５ｐｐｍ／℃
以内の低温度係数を有する薄膜抵抗体を再現性よく製造
できる。以下、本発明による実施例について述べる。Therefore, the present invention provides 400qo depending on the composition ratio.
By applying an appropriate heat treatment temperature within the temperature range of ~550 pm, it is highly stable and 0 ± 5 ppm/℃
It is possible to manufacture thin film resistors with a low temperature coefficient within the range shown in FIG. Examples according to the present invention will be described below.
（実施例 １）シリコン含有量５８Ｗｔ％のクロムシリ
コン（１０００，厚さ５肋）に、Ｎｉ＞５７，Ｃｒ１５
〜１８ Ｆｅ残部Ｍ％よりなるニクロム合金の板（中：
０，２，５，１０，１５肋，厚さ１肌）をそれぞれ重ね
合せ、ニッケルクロム第２種の占有面積を可変として複
合ターゲットを構成した。(Example 1) Chromium silicon (1000, thickness 5 ribs) with a silicon content of 58 Wt%, Ni>57, Cr15
~18 Nichrome alloy plate consisting of Fe balance M% (middle:
(0, 2, 5, 10, 15 ribs, 1 skin thickness) were stacked on top of each other, and the occupied area of the second type of nickel chromium was varied to form a composite target.
そして、直流ハィレートスパッタ装置（ＳＢＨ−１１０
６）〔日本真空■製〕で、フオルステラィト磁器上に、
アルゴンガス圧６×１０３Ｔｏｎ，パワー密度３Ｗ／の
，スパッタ時間２０分で着膜した。次に、このようにし
て製造した皮膜抵抗体を安定化するため、空気中におい
て５００００２ｈｒそれぞれ熱処理を施こし、抵抗値な
らびに抵抗温度係数を測定して第１図および第２図に示
す結果を得た。Then, a DC high rate sputtering device (SBH-110
6) [Made by Nippon Vacuum ■] on falstellite porcelain,
The film was deposited in a sputtering time of 20 minutes at an argon gas pressure of 6×10 3 Ton and a power density of 3 W/. Next, in order to stabilize the film resistors manufactured in this way, they were each heat-treated in air for 500,002 hours, and the resistance values and resistance temperature coefficients were measured, and the results shown in Figures 1 and 2 were obtained. Ta.
第１図に示すように、シリコン含有量５恐れ％のクロム
シリコン単独系の温度係数は、２０仲ｐｍ／℃であり、
それにニッケルクロム第２種を添加すると、温度係数は
最初急激に、後にはゆるやかに減ずる。As shown in Figure 1, the temperature coefficient of a chromium-silicon single system with a silicon content of 5% is 20 pm/°C.
When nickel chromium type 2 is added to it, the temperature coefficient decreases rapidly at first and then gradually.
この結果ニッケル・クロム第２種の添加量の変化による
温度係数への影響が小さく、かつ熱処理温度の調整によ
って、温度係数０±５ｐｐｍ／℃を再現性よく得るニッ
ケルクロム第２種の添加量は、４〜１７Ｗ％となる。ま
た、第２図に示すように、クロムシリコン単独系の面積
抵抗値は、３．弧○／口であり、それにニッケル・クロ
ム第２種を添加すると次第に低下し、１５ｗｔ％以上に
なると５０００／口以下の面積抵抗値をしめす。As a result, changes in the amount of nickel and chromium type 2 added have little effect on the temperature coefficient, and by adjusting the heat treatment temperature, the amount of nickel and chromium type 2 added can achieve a temperature coefficient of 0 ± 5 ppm/℃ with good reproducibility. , 4 to 17 W%. Further, as shown in FIG. 2, the sheet resistance value of the chromium silicon single system is 3. It has an arc ◯/hole, and when nickel/chromium type 2 is added thereto, it gradually decreases, and when it becomes 15 wt % or more, it shows a sheet resistance value of 5000/hole or less.
したがって、本発明の５０００／口〜２ＫＱ／口の高抵
抗値で、低温度係数の得られるニッケルクロム第２種の
添加量は、４〜１５Ｍ％に限定される。Therefore, the amount of the second type of nickel chromium added, which provides a high resistance value of 5000/unit to 2KQ/unit and a low temperature coefficient, is limited to 4 to 15 M%.
次に、第１表に本発明にか）る抵抗器の負荷寿命特性を
、従来例との比較において示す。Next, Table 1 shows the load life characteristics of the resistor according to the present invention in comparison with a conventional example.
なお、各試料は、完成抵抗値が５００ＫＱで、定格電圧
１．印ｒ負荷、０．則ｒ無負荷のサイクルを１０００ｈ
ｒ繰り返し（周囲温度７０００）た後の抵抗値変化率で
ある。第１表
第１表に示すように、ニッケルクロム第２種を４〜１５
ｗｔ％添加することによって、負荷寿命特性が、顕著に
改善される。Each sample has a completed resistance value of 500KQ and a rated voltage of 1. Mark r load, 0. Rule: 1000h no-load cycle
This is the resistance value change rate after r repetitions (ambient temperature 7000). Table 1 As shown in Table 1, 4 to 15 nickel chromium type 2
By adding wt%, the load life characteristics are significantly improved.
（実施例 ２）
シリコン含有量斑Ｍｔ％のクロムシリコン（１００Ｊ，
厚さ５側）に、ニッケルクロム第２種の板（中：５，１
仇肋， 厚さ１側）をそれぞれ重ね合せて複合ターゲッ
トを構成し、実施例１と同じ条件で、スパッタ時間を５
〜５粉ご可変して着膜した。(Example 2) Chrome silicon with uneven silicon content Mt% (100J,
thickness 5 side), nickel chromium type 2 plate (middle: 5, 1
A composite target was constructed by stacking the two sides (on the side with a thickness of 1), and the sputtering time was set at 5 under the same conditions as in Example 1.
The film was deposited by varying the amount of powder up to 5.
なお従来例との比較のため、クロムシリコン単独系も同
様に着膜した。次に、このようにして製造した皮膜抵抗
体を安定化するため、空気中で、３５０ｑ○，４００ｑ
ｏ，４５０℃，５００ｏｏ，５５０ｑｏ，６００ｑＣの
温度で各沙ｒ熱処理を施こした。For comparison with the conventional example, a chromium-silicon-based film was also deposited in the same manner. Next, in order to stabilize the film resistor manufactured in this way, 350q○, 400q
Salt heat treatments were carried out at temperatures of 200°C, 450°C, 500°C, 550°C, and 600qC.
第３図に、従来例として、クロムシリコン単独系の熱処
理温度による抵抗値と温度係数の関係を、また第４図，
第５図に、本発明にか）るクロムシリコン系にニッケル
クロム合金第２種をそれぞれ５Ｍ％，１肌ｔ％添加した
系の熱処理温度による抵抗値と温度係数の関係を示す。Figure 3 shows the relationship between the resistance value and temperature coefficient depending on the heat treatment temperature of a chromium-silicon single system as a conventional example, and Figure 4 shows
FIG. 5 shows the relationship between the resistance value and the temperature coefficient depending on the heat treatment temperature of the chromium-silicon system according to the present invention in which nickel-chromium alloy type 2 is added at 5 M% and 1 skin t%, respectively.
第３図に示したクロムシリコン単独系からなる従来例で
は、スパッタ時間によって決まる抵抗値に対し、温度係
数の変化が大きい、また、熱処理温度に対しても、同様
に、温度係数の変化が大きい。それに比べ、第４図およ
び第５図に示した本発明のクロムシリコンにニッケルク
ロム第２種を５Ｍ％および１肌ｔ％添加した系では、抵
抗値ならびに熱処理温度の変化に対し、温度係数の変化
が著しく低減されている。すなわち、本発明で得られる
薄膜抵抗体は、従来例に比べて抵抗値ならびに熱処理温
度の変動による温度係数への依存性が極めて小さくなっ
ていることから、製造工程において、温度保数を０±５
ｐｐｍ／℃以内に再現性よく制御して生産しうろことを
意味している。次に、本発明の薄膜抵抗体を３５０ｑ０
〜６００ＣＯの範囲で熱処理した各試料の負荷寿命特性
（面積抵抗値ＩＫＯ／口）を第２表に示す。第２表
第２表に示すように、本発明の熱処理温度は、負荷寿命
特性から、４００ｏＣ〜５５０ｏｏの範囲に限定される
。In the conventional example shown in Figure 3, which consists of a chromium-silicon single system, the temperature coefficient changes largely with respect to the resistance value determined by the sputtering time, and the temperature coefficient also changes largely with respect to the heat treatment temperature. . In comparison, in the system shown in Figures 4 and 5 in which nickel chromium type 2 type 2 is added at 5 M% and 1 skin t% to the chromium silicon of the present invention, the temperature coefficient changes with respect to changes in resistance value and heat treatment temperature. Changes are significantly reduced. In other words, the thin film resistor obtained by the present invention has extremely low dependence on the temperature coefficient due to fluctuations in resistance value and heat treatment temperature compared to conventional examples, so the temperature coefficient can be adjusted to 0±0 in the manufacturing process. 5
This means that production can be controlled with good reproducibility within ppm/°C. Next, the thin film resistor of the present invention was
Table 2 shows the load life characteristics (area resistance value IKO/mouth) of each sample heat-treated in the range of ~600 CO. Table 2 As shown in Table 2, the heat treatment temperature of the present invention is limited to a range of 400oC to 550oC due to load life characteristics.
なお、上記実施例においては、フオルステラィト磁器上
に着膜した場合について述べてきたが、アルミナ磁器、
グレーズドアルミナ磁器、コーニングガラス（Ｍ．７０
５９）や、シリコン絶系該基板であっても同様な効果を
有することは言うまでもない。In the above examples, the case where the film was deposited on forstellite porcelain was described, but the film was deposited on alumina porcelain,
Glazed alumina porcelain, Corning glass (M.70
It goes without saying that similar effects can be obtained even with the substrate 59) or the substrate made entirely of silicon.
以上のように本発明は、５２〜６２れ％のシリコンを含
有するクロムシリコン合金と、ニッケル５７Ｍ％以上、
クロム１５〜１球れ％、鉄残部％よりなるニクロム合金
とより構成された複合ターゲットで、前記ニクロム合金
が４〜１５Ｍ％である夕−ゲットでスパッタリソグした
後、４００００〜５５０ｑｏの熱処理を施こすことによ
り、面積抵抗値が５０００／口〜次０／口という高抵抗
域でありながら、０±５ｐｐｍ／℃以内の低い温度係数
を有する薄膜抵抗体を提供するものであり、正確に制御
して製造でき、しかも、抵抗値の安定性も著しく改善す
るという効果を有している。As described above, the present invention provides a chromium-silicon alloy containing 52 to 62% silicon, 57M% or more of nickel,
A composite target composed of a nichrome alloy consisting of 15 to 1% chromium and a balance of iron, and after sputtering with a nichrome alloy containing 4 to 15M% of the nichrome alloy, heat treatment is performed at 40,000 to 550 qo. This provides a thin film resistor that has a low temperature coefficient within 0±5 ppm/°C while having a sheet resistance value in the high resistance range of 5000/unit to 0/unit, and can be accurately controlled. It is easy to manufacture and has the effect of significantly improving resistance value stability.
第１図は本発明にか）るニッケル・クロム第２種の添加
量と抵抗温度係数の関係を示す図、第２図は本発明にか
）るニッケルクロム第２種の添加量と面積抵抗値の関係
を示す図、第３図はクロムシリコンの従来例における熱
処理温度による面積抵抗値と温度係数の関係を示す図、
第４図は本発明にか）るニッケルクロム第２種５ｗｔ％
添加系の熱処理温度による面積抵抗値と温度係数の関係
を示す図、第５図は、本発明にか）るニッケルクロム第
２種１肌ｔ％添加系の熱処理温度による面積抵抗値と温
度係数の関係を示す図である。
第１図
第２図
第３図
第４図
第５図Figure 1 is a diagram showing the relationship between the addition amount of nickel/chromium type 2 (according to the present invention) and the temperature coefficient of resistance, and Figure 2 is a diagram showing the relationship between the addition amount of nickel/chromium type 2 (according to the present invention) and sheet resistance. Figure 3 is a diagram showing the relationship between the sheet resistance value and temperature coefficient depending on the heat treatment temperature in a conventional example of chromium silicon.
Figure 4 shows nickel chromium type 2 5wt% according to the present invention.
Figure 5 shows the relationship between the sheet resistance value and the temperature coefficient depending on the heat treatment temperature of the additive system, and FIG. FIG. Figure 1 Figure 2 Figure 3 Figure 4 Figure 5
Claims (1)
コン合金と、ニツケル５７ｗｔ％以上、クロム１５〜１
８ｗｔ％、鉄残部ｗｔ％よりなるニクロム合金とより構
成さた複合ターゲツトで、前記ニクロム合金が４〜１５
ｗｔ％であるターゲツトでスパツタリングした後、４０
０〜５５０℃の熱処理を施こすことを特徴とする薄膜抵
抗体の製造方法。1 Chromium-silicon alloy containing 52 to 62 wt% silicon, nickel 57 wt% or more, chromium 15 to 1
A composite target composed of a nichrome alloy consisting of 8 wt% iron and the balance iron wt%, the nichrome alloy containing 4 to 15 wt% iron.
After sputtering with a target of wt% 40
1. A method for manufacturing a thin film resistor, comprising performing heat treatment at 0 to 550°C.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55145144A JPS6034241B2 (en) | 1980-10-16 | 1980-10-16 | Manufacturing method of thin film resistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55145144A JPS6034241B2 (en) | 1980-10-16 | 1980-10-16 | Manufacturing method of thin film resistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5769706A JPS5769706A (en) | 1982-04-28 |
| JPS6034241B2 true JPS6034241B2 (en) | 1985-08-07 |
Family
ID=15378427
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP55145144A Expired JPS6034241B2 (en) | 1980-10-16 | 1980-10-16 | Manufacturing method of thin film resistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6034241B2 (en) |
-
1980
- 1980-10-16 JP JP55145144A patent/JPS6034241B2/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5769706A (en) | 1982-04-28 |
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